CN111448631B - Thin film capacitor - Google Patents
Thin film capacitor Download PDFInfo
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- CN111448631B CN111448631B CN201880078865.6A CN201880078865A CN111448631B CN 111448631 B CN111448631 B CN 111448631B CN 201880078865 A CN201880078865 A CN 201880078865A CN 111448631 B CN111448631 B CN 111448631B
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- 239000010409 thin film Substances 0.000 title claims abstract description 41
- 239000003990 capacitor Substances 0.000 title claims description 55
- 239000010408 film Substances 0.000 claims abstract description 128
- 238000004804 winding Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 62
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 239000004743 Polypropylene Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- -1 polypropylene Polymers 0.000 description 4
- 229920001155 polypropylene Polymers 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/32—Wound capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The 1 st vapor deposition electrode is divided into an end portion electrode provided on one end portion side in the width direction of the thin film surface and a central portion electrode which is a portion other than the end portion electrode, by a longitudinal slit portion extending in the longitudinal direction of the thin film surface, and the central portion electrode is divided into a plurality of divided electrodes arranged side by side in the longitudinal direction of the thin film surface by a width slit portion extending from the longitudinal slit portion to the other end portion side of the thin film surface. Each of the plurality of divided electrodes is connected to the end electrode via a fuse portion provided at the slit portion in the longitudinal direction. The 2 nd vapor deposition electrode is not divided. The film resistance of the 1 st vapor deposition electrode is higher than that of the 2 nd vapor deposition electrode.
Description
Technical Field
The present invention relates to a film capacitor.
Background
Conventionally, there is known a film capacitor formed by winding 2 dielectric films each having a film-like electrode made of metal such as aluminum in a state where the dielectric films are stacked on each other. In such a thin film capacitor, in the case where insulation breakdown occurs in a portion of the dielectric thin film, the insulation breakdown may cause a short circuit of the thin film capacitor.
Therefore, in such a thin film capacitor, the following structure can be adopted: in one dielectric thin film, a film-like electrode is divided into an end portion side end electrode and a center portion side center electrode by a 1 st slit portion extending in a longitudinal direction of the dielectric thin film, the center portion electrode is divided into a plurality of divided electrodes arranged side by side in the longitudinal direction by a 2 nd slit portion extending in a width direction of the dielectric thin film from the 1 st slit portion, and the divided electrodes and the end portion electrodes are connected by a fuse portion provided in the 1 st slit portion. In this configuration, when insulation breakdown occurs in a portion of the dielectric thin film, a large current flows through the divided electrode corresponding to the portion where insulation breakdown occurs, and the fuse portion provided in the divided electrode is blown. Thereby, a short circuit of the thin film capacitor is prevented.
An example of such a thin film capacitor is described in patent document 1, for example.
Prior art documents
Patent document
Patent document 1: japanese laid-open patent publication No. 3-34513
Disclosure of Invention
Problems to be solved by the invention
Film capacitors are used in various applications, but depending on the use environment, higher safety may be required for dielectric breakdown of dielectric films and the like
Accordingly, an object of the present invention is to provide a thin film capacitor with improved safety.
Means for solving the problem
A thin film capacitor according to claim 1 of the present invention includes: a capacitor body configured by winding or laminating a 1 st film and a 2 nd film in a state of being overlapped with each other; and a 1 st end face electrode and a 2 nd end face electrode formed on both end faces of the capacitor body, respectively. A1 st electrode is formed on a 1 st film surface which is one main surface of the 1 st film, and a 2 nd electrode is formed on a 2 nd film surface which is the other main surface of the 1 st film or one main surface of the 2 nd film. Here, the 1 st electrode is divided into an end electrode provided on one end portion side in the width direction of the 1 st film surface and a central electrode which is a portion other than the end electrode by a 1 st slit portion extending in the longitudinal direction of the 1 st film surface, and the central electrode is divided into a plurality of divided electrodes arranged in parallel in the longitudinal direction of the 1 st film surface by a 2 nd slit portion extending from the 1 st slit portion to the other end portion side of the 1 st film surface. Each of the plurality of divided electrodes is connected to the end electrode via a fuse portion provided in the 1 st slit portion. The 2 nd electrode is an undivided electrode. And the membrane resistance value of the 1 st electrode is higher than that of the 2 nd electrode.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, a thin film capacitor with improved safety can be provided.
The effects and significance of the present invention will become more apparent from the following description of the embodiments. However, the embodiment described below is merely an example for carrying out the present invention, and the present invention is not limited to the contents described in the embodiment below at all.
Drawings
Fig. 1 (a) is a perspective view of a film capacitor according to an embodiment; fig. 1 (b) is a longitudinal sectional view of the film capacitor cut at the line a-a' of fig. 1 (a) according to the embodiment.
Fig. 2 (a) is a plan view of the capacitor main body in a state in which the 1 st film and the 2 nd film according to the embodiment are partially wound. Fig. 2 (b) is a cross-sectional view of the capacitor body in which the fuse pattern portion is cut in the width direction according to the embodiment. Fig. 2 (c) is a cross-sectional view of the capacitor body cut in the width direction at a portion where the fuse pattern is not present according to the embodiment.
Fig. 3 (a) to (d) are diagrams for explaining the capacitor main body according to the modification.
Detailed Description
Embodiments of the present invention will be described below with reference to the drawings.
In the present embodiment, the 1 st end face electrode 30 and the 2 nd end face electrode 40 correspond to the "1 st end face electrode" and the "2 nd end face electrode" described in the claims, respectively. The 1 st film 100 and the 2 nd film 200 correspond to the "1 st film" and the "2 nd film" described in the claims, respectively. The film surface 100a corresponds to the "1 st film surface" described in the claims. The longitudinal slit portion 102 corresponds to the "1 st slit portion" described in the claims. The width-direction slit portion 103 corresponds to a "2 nd slit portion" described in the claims. The film surface 200a corresponds to the "2 nd film surface" described in the claims. Note that the 1 st vapor deposition electrode 300 corresponds to the "1 st electrode" described in claims. Further, vapor deposition electrode 2 400 corresponds to "electrode 2" described in claims. The fuse pattern 304 corresponds to a "fuse unit" described in claims.
However, the above description is only for the purpose of corresponding the structure of the claims to the structure of the embodiment, and the invention described in the claims is not limited to the structure of the embodiment by the above correspondence.
Fig. 1 (a) is a perspective view of the film capacitor 1 according to the present embodiment, and fig. 1 (b) is a vertical sectional view of the film capacitor 1 according to the present embodiment, cut along the line a-a' in fig. 1 (a).
The film capacitor 1 includes: capacitor body 10, outer film 20, 1 st end face electrode 30, and 2 nd end face electrode 40. The film capacitor 1 is formed in a flat cylindrical shape having an oblong cross section.
The capacitor body 10 is formed by winding 2 dielectric thin films on which vapor deposition electrodes are formed in a stacked state. The detailed structure of the capacitor body 10 will be described later.
The outer film 20 is wound around the outer peripheral surface of the capacitor body 10 by a plurality of turns (multiple turns). Thus, the outer peripheral surface of capacitor body 10 is covered with a plurality of outer films 20, and damage, breakage, or the like of capacitor body 10 is prevented. Examples of the material of the outer film 20 include polypropylene (PP), polyethylene terephthalate (PET), and polyethylene naphthalate (PEN).
The 1 st end face electrode 30 and the 2 nd end face electrode 40 are formed by spraying a metal such as aluminum, zinc, or magnesium on the 1 st end face 11 and the 2 nd end face 12 of the capacitor body 10, respectively. In order to lead out electricity from the film capacitor 1, lead-out terminals (not shown) such as bus bars and lead wires are connected to the 1 st end face electrode 30 and the 2 nd end face electrode 40.
Next, the structure of the capacitor main body 10 will be described in detail.
Fig. 2 (a) is a plan view of the capacitor main body 10 in a state in which a part of the 1 st film 100 and the 2 nd film 200 according to the present embodiment is wound. Fig. 2 (b) is a cross-sectional view of the capacitor body 10 in which the fuse pattern 304 is partially cut in the width direction according to the present embodiment; fig. 2 (c) is a cross-sectional view of the capacitor body 10 cut in the width direction at a portion where the fuse pattern 304 is not present according to the present embodiment.
The capacitor body 10 includes: 1 st thin film 100, 2 nd thin film 200, 1 st vapor- deposition electrode 300, and 2 nd vapor-deposition electrode 400.
The 1 st film 100 and the 2 nd film 200 are laminated such that the 1 st film 100 is on the outside (lower side) and the 2 nd film 200 is on the inside (upper side) and wound. The 1 st film 100 and the 2 nd film 200 are transparent dielectric films made of a resin material such as polypropylene (PP), polyethylene terephthalate (PET), or polyethylene naphthalate (PEN). The 1 st film 100 and the 2 nd film 200 have substantially equal width dimensions.
On one (upper) film surface 100a of the 1 st film 100, a 1 st insulating edge 101 extending in the longitudinal direction thereof is formed at one end in the width direction thereof. A 2 nd insulating edge portion 201 extending in the longitudinal direction is formed on one (upper) film surface 200a of the 2 nd film 200 facing in the same direction as the film surface 100a of the 1 st film 100, at an end opposite to the one end of the 1 st film 100 in the width direction. The 1 st insulating margin portion 101 and the 2 nd insulating margin portion 201 are margin portions of an aluminum-containing layer, which is not deposited with metal.
First vapor-deposition electrode 300 is an aluminum-containing layer and is formed in the shape of a film on film surface 100a of first film 100. The aluminum-containing layer is formed by vapor deposition of aluminum or an alloy of aluminum and magnesium or other metal, for example. Further, it is desirable that zinc is not contained in the metal that becomes an alloy with aluminum. First vapor deposition electrode 300 is formed up to an end portion of 1 st film 100 opposite to the end portion on the 1 st insulating edge 101 side in the width direction, and connected to first end face electrode 30.
On the film surface 100a of the 1 st film 100, a lengthwise slit portion 102 extending in the lengthwise direction and having no aluminum deposition-containing layer (no electrode) is formed in the end region of the 1 st vapor deposition electrode 300 on the side opposite to the 1 st insulating edge portion 101. First vapor deposition electrode 300 is divided by longitudinal slit 102 into end electrode 301 provided on the other end side of first thin film 100 and central electrode 302 which is a portion other than end electrode 301. Further, on the thin film surface 100a, a widthwise slit portion 103 is formed which crosses the 1 st vapor-deposition electrode 300 at a predetermined interval in the longitudinal direction and in the widthwise direction thereof and in which the aluminum-containing layer is not vapor-deposited (no electrode is present). The width-direction slit portion 103 is formed from the longitudinal-direction slit portion 102 to the 1 st insulating edge portion 101 obliquely with respect to the width direction. The central electrode 302 is divided into a plurality of divided electrodes 303 arranged in the longitudinal direction of the thin film surface 100a by the plurality of width-direction slit portions 103.
A fuse pattern 304 is formed between each divided electrode 303 and the end electrode 301 so as to bridge the longitudinal slit portion 102. That is, each divided electrode 303 is connected to the end electrode 301 via the fuse pattern 304. The pattern width of the fuse pattern 304 is set to, for example, about 0.5 mm.
Second vapor-deposition electrode 2 is an aluminum-containing layer similar to that of first vapor-deposition electrode 300, and is formed in the shape of a film on film surface 200a of second film 200. Vapor deposition electrode 2 is formed to be continuous without being divided in the width direction and the length direction of thin film surface 200 a. That is, the 2 nd vapor deposition electrode 400 is an undivided electrode.
The 2 nd vapor deposition electrode 400 is formed up to the end portion of the 2 nd thin film 200 opposite to the end portion on the 2 nd insulating margin 201 side in the width direction, and a Heavy edge (Heavy edge) portion 401 is formed at the end portion of the 1 st vapor deposition electrode 300 existing at the opposite end portion by making the thickness of the portion larger than the thickness of the other portion. The end surface of the heavy-side portion 401 is connected to the 2 nd end surface electrode 40.
When 2 nd vapor deposition electrode 400 is formed on 2 nd thin film 200, first, the entire thickness is set to be constant. Next, aluminum or the like is further deposited in the portion to be the heavy-side portion 401, and the thickness of the portion becomes large. At this time, the portion of the 2 nd vapor deposition electrode 400 other than the portion to be the heavy-side portion 401 is covered with a mask metal plate, and aluminum or the like is not deposited. However, since a gap is formed between the mask metal plate and the 2 nd vapor deposition electrode 400 in manufacturing, aluminum or the like deposited by vapor deposition protrudes near a portion to be the heavy-side portion 401. Thus, in the vicinity 402 of the heavy-side portion 401 of the 2 nd vapor deposition electrode 400, the thickness gradually increases toward the heavy-side portion 401.
The capacitor body 10 includes: an effective electrode region R1 where the 1 st vapor deposition electrode 300 and the 2 nd vapor deposition electrode 400 overlap each other, and a non-effective electrode region R2 that is offset from the effective electrode region R1 in the width direction of the 1 st vapor deposition electrode 300 and the 2 nd vapor deposition electrode 400. The effective electrode region R1 contributes to the capacitance of the thin film capacitor 1.
As shown in fig. 2 (b) and (c), thickness T1 of vapor deposition electrode 1 is smaller than thickness T2 of vapor deposition electrode 2 400. Thus, the film resistance value of the 1 st vapor deposition electrode 300 is higher than that of the 2 nd vapor deposition electrode 400. In the 1 st vapor deposition electrode 300, the thickness of the end electrode 301 is substantially equal to the thickness of each divided electrode 303 and each fuse pattern 304. That is, the same heavy edge portion 401 as that of the 2 nd vapor deposition electrode 400 is not formed in the end electrode 301.
When the thin film capacitor 1 is energized, insulation breakdown may occur in a part of the 1 st thin film 100 and the 2 nd thin film 200. When insulation breakdown occurs, a large current that becomes abnormal flows through the divided electrode 303 corresponding to the portion where the insulation breakdown occurs, and the fuse pattern 304 provided in the divided electrode 303 is blown or scattered. Thereby, the film capacitor 1 becomes hard to be short-circuited.
Here, the thickness of 1 st vapor deposition electrode 300 is smaller than that of 2 nd vapor deposition electrode 400, and the film resistance value is higher than that of 2 nd vapor deposition electrode 400. Accordingly, the fuse pattern 304 has a high film resistance value and high sensitivity, and is easily blown or scattered when an abnormal current is generated in the divided electrode 303. Therefore, according to the present embodiment, the short circuit of the film capacitor 1 is further less likely to occur, and therefore, the safety of the film capacitor 1 can be improved.
Further, in 2 nd vapor deposition electrode 400, since heavy edge portion 401 is formed at the end portion connected to 2 nd end surface electrode 40, 2 nd vapor deposition electrode 400 and 2 nd end surface electrode 40 can be firmly connected. Accordingly, when thin-film capacitor 1 is energized (during charging and discharging), even if a large current flows, the connection between second vapor-deposition electrode 2 400 and second end-face electrode 2 40 is difficult to break. This prevents heat generation from occurring in the portion where the 2 nd vapor deposition electrode 400 and the 2 nd end face electrode 40 are disconnected from each other and the 1 st film 100 and the 2 nd film 200 from being damaged by the heat, thereby improving the current resistance.
Further, a heavy-side portion is not formed in end electrode 301 of vapor deposition electrode 1. Therefore, similarly to the case where the thickness of the portion 402 near the heavy-side portion 401 in the 2 nd vapor deposition electrode 400 is increased by the influence of the formation of the heavy-side portion 401, the thickness of the fuse pattern 304 near the end electrode 301 does not increase. This can sufficiently increase the film resistance value of the fuse pattern 304, and can sufficiently increase the sensitivity of the fuse pattern 304.
< modification example >
While the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can be made to the application examples of the present invention in addition to the above embodiments.
For example, in the above embodiment, the heavy-side portion 401 is formed in the 2 nd vapor deposition electrode 400, and the heavy-side portion is not formed in the 1 st vapor deposition electrode 300. However, as shown in fig. 3 (a), a heavy-side portion 305 may be formed on the end electrode 301 of the 1 st vapor deposition electrode 300. In this case, the thickness of the fuse pattern 304 on the heavy-side portion 305 side is slightly increased by the influence of the formation of the heavy-side portion 305, and the film resistance value is slightly increased. Therefore, the sensitivity of the fuse pattern 304 may become lower compared to the above embodiment. On the other hand, by forming the heavy-side portions 305, the connection between the 1 st vapor deposition electrode 300 and the 1 st end surface electrode 30 becomes strong, and therefore, improvement of the current resistance can be expected.
In the above embodiment, the 1 st vapor-deposition electrode 300 is formed on one (upper) film surface 100a of the 1 st film 100, and the 2 nd vapor-deposition electrode 400 is formed on one (upper) film surface 200a of the 2 nd film 200. However, as shown in fig. 3 b, it is also possible to form the 2 nd vapor deposition electrode 400 on one (upper) film surface 200a of the 2 nd film 200 and form the 1 st vapor deposition electrode 300 on the other (lower) film surface 200b of the 2 nd film 200. In this case, the film surface 200b corresponds to the "1 st film surface" described in the claims. As shown in fig. 3 c, a 1 st vapor-deposition electrode 300 may be formed on one (upper) thin film surface 200a of the 2 nd thin film 200, and a 2 nd vapor-deposition electrode 400 may be formed on the other (lower) thin film surface 200b of the 2 nd thin film 200. In this case, the film surface 200a corresponds to the "1 st film surface" described in the claims, and the film surface 200b corresponds to the "2 nd film surface" described in the claims. In the modification examples of fig. 3 (b) and (c), the width of the 2 nd film 200 is larger than the width of the 1 st film 100. As shown in fig. 3 d, vapor-deposition electrode 2 400 may be formed on one (upper) film surface 100a of film 1 100, and vapor-deposition electrode 1 300 may be formed on one (upper) film surface 200a of film 2 200. In this case, the film surface 200a corresponds to the "1 st film surface" described in the claims, and the film surface 100a corresponds to the "2 nd film surface" described in the claims. In the modification examples shown in fig. 3 (b) to (d), a fillet 305 may be formed in the end electrode 301 of the 1 st vapor deposition electrode 300, similarly to the modification example shown in fig. 3 (a).
In the above embodiment, the thickness of the 1 st vapor deposition electrode 300 and the 2 nd vapor deposition electrode 400 is changed, so that the film resistance values thereof are changed. However, 1 st vapor deposition electrode 300 and 2 nd vapor deposition electrode 400 may have their film resistance values changed by changing the types of metals constituting these electrodes.
In the above embodiment, the capacitor main body 10 is configured by winding the 1 st film 100 and the 2 nd film 200, but is not limited thereto. That is, instead of the capacitor body 10 in which the 1 st film 100 and the 2 nd film 200 are wound in fig. 1 (a) to 2 (c), the capacitor body 10 in which the 1 st film 100 and the 2 nd film 200 are alternately laminated may be used. In this case, for convenience, the direction connecting the 1 st end face electrode 30 and the 2 nd end face electrode 40 is defined as the width direction, and the direction perpendicular thereto is defined as the length direction.
The embodiments of the present invention can be modified in various ways as appropriate within the scope of the technical idea shown in the claims.
Industrial applicability
The present invention is useful for a thin film capacitor used for various electronic devices, electric devices, industrial devices, electric devices of vehicles, and the like.
-description of symbols-
1 thin film capacitor
10 capacitor body
30 st end face electrode (end face electrode)
40 nd 2 nd end face electrode (end face electrode)
100 th film (film)
100a film surface (No. 1 film surface)
102 longitudinal slit part (1 st slit part)
103 width direction slit part (No. 2 slit part)
200 film (film) of No. 2
200a film surface (No. 2 film surface)
300 the 1 st vapor-deposited electrode (the 1 st electrode)
301 end electrode
302 center electrode
303 dividing electrode
304 fuse pattern (fuse part)
400 nd 2 nd evaporation electrode (2 nd electrode)
401 heavy edge portion.
Claims (1)
1. A thin-film capacitor, wherein,
the thin film capacitor is provided with:
a capacitor body configured by winding or laminating a 1 st film and a 2 nd film in a state of being overlapped with each other; and
a 1 st end face electrode and a 2 nd end face electrode formed on both end faces of the capacitor body, respectively,
a 1 st electrode is formed on a 1 st film surface which is one main surface of the 1 st film,
a 2 nd electrode is formed on the 2 nd film surface which is the other main surface of the 1 st film or one main surface of the 2 nd film,
the 1 st electrode is divided into an end portion electrode provided on one end portion side in the width direction of the 1 st film surface and a central portion electrode which is a portion other than the end portion electrode by a 1 st slit portion extending in the longitudinal direction of the 1 st film surface,
the central portion electrode is divided into a plurality of divided electrodes arranged in the longitudinal direction of the 1 st film surface by a 2 nd slit portion extending from the 1 st slit portion to the other end portion side in the width direction of the 1 st film surface,
each of the plurality of divided electrodes is connected to the end electrode via a fuse portion provided in the 1 st slit portion,
the 2 nd electrode is not divided,
the membrane resistance value of the 1 st electrode is higher than that of the 2 nd electrode,
the 2 nd electrode has a heavy-side portion having a thickness larger than that of other portions at an end portion on the opposite side of the end portion located closer to the end electrode of the 1 st electrode in the width direction of the 2 nd film surface,
the end portion electrode of the 1 st electrode is connected to the 1 st end surface electrode, the heavy side portion of the 2 nd electrode is connected to the 2 nd end surface electrode,
the thickness of the end portion electrode is substantially equal to the thickness of the central portion electrode and the thickness of the fuse portion.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-006090 | 2018-01-18 | ||
| JP2018006090 | 2018-01-18 | ||
| PCT/JP2018/045999 WO2019142561A1 (en) | 2018-01-18 | 2018-12-14 | Film capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111448631A CN111448631A (en) | 2020-07-24 |
| CN111448631B true CN111448631B (en) | 2021-12-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880078865.6A Active CN111448631B (en) | 2018-01-18 | 2018-12-14 | Thin film capacitor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2019142561A1 (en) |
| CN (1) | CN111448631B (en) |
| WO (1) | WO2019142561A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7301974B2 (en) * | 2019-08-08 | 2023-07-03 | 株式会社村田製作所 | Film capacitor |
| CN217134211U (en) * | 2019-08-08 | 2022-08-05 | 株式会社村田制作所 | Thin film capacitor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7933111B2 (en) * | 2007-05-08 | 2011-04-26 | Nuinteck Co., Ltd | Metallized plastic film and film capacitor |
-
2018
- 2018-12-14 JP JP2019565767A patent/JPWO2019142561A1/en active Pending
- 2018-12-14 CN CN201880078865.6A patent/CN111448631B/en active Active
- 2018-12-14 WO PCT/JP2018/045999 patent/WO2019142561A1/en active Application Filing
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| JPH03234010A (en) * | 1990-02-09 | 1991-10-18 | Matsushita Electric Ind Co Ltd | Metallized film capacitor |
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| JP2014049711A (en) * | 2012-09-04 | 2014-03-17 | Nichicon Corp | Metalization film capacitor |
| CN107408456A (en) * | 2015-05-11 | 2017-11-28 | 松下知识产权经营株式会社 | Metallic film capacitor |
| CN206726958U (en) * | 2017-03-16 | 2017-12-08 | 东莞市国灿电子科技有限公司 | Thin film capacitor and its capacitor core |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111448631A (en) | 2020-07-24 |
| JPWO2019142561A1 (en) | 2021-01-14 |
| WO2019142561A1 (en) | 2019-07-25 |
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