CN111446173A - Wiring broken wire repairing process - Google Patents
Wiring broken wire repairing process Download PDFInfo
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- CN111446173A CN111446173A CN202010183675.XA CN202010183675A CN111446173A CN 111446173 A CN111446173 A CN 111446173A CN 202010183675 A CN202010183675 A CN 202010183675A CN 111446173 A CN111446173 A CN 111446173A
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 230000008569 process Effects 0.000 title claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 36
- 239000010937 tungsten Substances 0.000 claims abstract description 36
- 229910052709 silver Inorganic materials 0.000 claims abstract description 34
- 239000004332 silver Substances 0.000 claims abstract description 34
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 31
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 29
- 230000008021 deposition Effects 0.000 claims abstract description 11
- 238000007740 vapor deposition Methods 0.000 claims abstract description 9
- 238000005520 cutting process Methods 0.000 claims description 21
- 230000008439 repair process Effects 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 10
- 230000003197 catalytic effect Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000012466 permeate Substances 0.000 claims description 3
- 238000005336 cracking Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000003466 welding Methods 0.000 abstract description 3
- 230000006872 improvement Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229940100890 silver compound Drugs 0.000 description 1
- 150000003379 silver compounds Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/485—Adaptation of interconnections, e.g. engineering charges, repair techniques
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The embodiment of the invention discloses a wiring broken line repairing process, which comprises the following steps: based on the principle of vapor deposition, a tungsten conductive film used for connecting the metal layers of the substrate is selectively formed in damage notches caused by excessive laser damage on the metal layers on two sides of the Zap Hole in the substrate, and EHD-silver ink wiring is carried out on the tungsten conductive film. The invention improves the prior Zap + INK wire process (repairing Hole + INK Wiring process) into Zap + W (tungsten) contact (wire type) + INK wire process (repairing Hole + tungsten film (fixed point deposition) + INK Wiring process), namely, metal tungsten is added between the prior Zap Hole and INK wire metal layer to serve as a conductive medium, thereby ensuring that the filling effect of the silver INK solution is very ideal under the condition that the surface of the Zap Hole is completely covered by the tungsten metal layer, ensuring that the silver INK solution can be completely attached to the upper part of the tungsten metal layer after the liquid curing reaction of the silver INK solution is finished, and further ensuring that the conductivity is good in the welding process of silver and the metal layer below the substrate insulating layer when Ag is wired.
Description
Technical Field
The embodiment of the invention relates to the technical field of display panels, in particular to a wiring disconnection repairing process.
Background
At present, the EHD Ag INK Repair (EHD-silver INK Repair) technology is widely applied to Array Inline wire Repair (Array on-line Wiring Repair) of various large panel factories all over the world, and high-end panel products are manufactured by using the low resistance characteristic of silver, but the technology cannot be applied to Array Final wire Repair (Array Final Wiring Repair) because the Ag Wiring can be carried out after a Zap Hole is manufactured on the topmost insulating layer by using Cutting L asors to ensure that the silver and the metal layer below the insulating layer are welded to ensure the conductivity.
Most laser repair equipment in panel factories are equipped with Cutting L aser (Cutting laser) of nanometer level, the emission frequency is not higher than 100Hz, the standard of selective processing can not be achieved, the insulating layer can not be removed independently, and when silver is connected by using the Zap Hole mode, because the Cutting L aser Power (Cutting laser Power) has the problems of fluctuation and low frequency, after Zap Hole processing, both sides of the metal layer at the processing part are cut excessively and are hollow, so that curing reaction products after silver compound liquid flows in can not contact with the hollowed both sides, contact failure is caused, the violent resistance is high, and open circuit is formed (refer to fig. 1 and fig. 2).
Both the Jingdong B9 and B10 panel factories tried experiments to test Array Final INKREPair (Array Final ink repair) using the nano Cutting L aser, B9 ended up with failure, and currently only focused on Array Inline INKREPair (Array on-line ink repair), and B10 is currently in the stage of continuing research test, but progress results are not optimistic.
At present, many international well-known companies such as V-Tech (Japan); Charm Engineering (Korea) have experimentally found that the reproducibility and stability of ZapHole can be guaranteed by using femtosecond-level Cutting L aser instead of nanoscale Cutting L aser, and the success rate of Array Final INK Repair is also optimistic, but femtosecond-level Cutting L aser is ten times higher than the selling price of nanoscale Cutting L aser, which is different from one million RMB, so that it is not practical for panel factories to replace femtosecond-level Cutting L aser in large quantities to solve the problem.
Disclosure of Invention
Therefore, the embodiment of the invention provides a wiring broken line repairing process, which aims to solve the problem that in the prior art, when wiring is carried out on a Zap Hole due to the fact that the nano cutting laser can cause excessive damage on two sides of a product metal layer when the Zap Hole is manufactured, a silver ink solution cannot penetrate into a damage notch and cannot contact a substrate metal layer, and broken line repairing failure is caused.
In order to achieve the above object, the embodiments of the present invention provide the following technical solutions:
according to a first aspect of an embodiment of the present invention, a wiring disconnection repairing process includes: based on the principle of vapor deposition, a tungsten conductive film used for connecting the metal layers of the substrate is selectively formed in damage notches caused by excessive laser damage on the metal layers on two sides of the Zap Hole in the substrate, and EHD-silver ink wiring is carried out on the tungsten conductive film.
Further, a nanometer cutting laser is selected, and the cutting laser is emitted on the insulating layer at the top of the broken line of the substrate to manufacture a Zap Hole.
Furthermore, two side edges of the Zap Hole comprise a Metal2 insulating layer, a Metal2 Metal layer (Al + Co) and a G.IN insulating layer which are sequentially exposed from top to bottom, wherein the cutting laser forms a damage notch on the outer side edge of the Metal2 Metal layer.
Further, the nanoscale cutting laser is L CVD laser repair self-contained nanoscale cutting laser.
Further, the catalytic molecule adopted by the vapor deposition method is selected from W (CO) 6.
Further, gaseous W (CO)6 is filled into the Zap Hole, and based on the gas property of the gaseous W (CO)6, the gaseous W (CO)6 is adsorbed on the side wall of the Zap Hole and permeates into the damage gap of the Zap Hole.
Further, selecting deposition laser, emitting the deposition laser to the Zap Hole, and inducing the gaseous W (CO)6 to crack to generate a tungsten conductive film covering the side wall and the notch of the Zap Hole and positioned at the bottom of the Zap Hole and connecting the broken line parts at two sides of the Zap Hole to form a conductive layer-tungsten Metal layer, wherein the tungsten Metal layer sequentially covers the Metal2 insulating layer, the Metal2 Metal layer and the G.IN insulating layer from top to bottom.
Further, injecting silver ink solution into the Zap Hole, and attaching the silver ink solution to the outer wall of the tungsten metal layer after the silver ink solution is solidified, thereby forming a wiring metal layer-Ag metal layer.
The embodiment of the invention has the following advantages: based on the principle of vapor deposition, the existing Zap + INK Wiring process (Hole repairing + INK Wiring process) is improved into Zap + W (tungsten) contact (Wiring type) + INK Wiring process (Hole repairing + tungsten film (fixed-point deposition mode) + INK Wiring process), namely, metal tungsten is added between the existing Zap Hole (Hole repairing) metal layer and the INKwire (INK Wiring) metal layer to serve as a conductive medium, so that the filling effect of the silver INK solution is ensured to be ideal under the condition that the surface of the Zap Hole is completely covered by the tungsten metal layer, the silver INK solution can be completely attached to the upper part of the tungsten metal layer after the liquid curing reaction is finished, and the silver and the metal layer below the substrate insulating layer are ensured to be in the welding process and have good conductivity during the Ag Wiring.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. It should be apparent that the drawings in the following description are merely exemplary, and that other embodiments can be derived from the drawings provided by those of ordinary skill in the art without inventive effort.
The structures, ratios, sizes, and the like shown in the present specification are only used for matching with the contents disclosed in the specification, so that those skilled in the art can understand and read the present invention, and do not limit the conditions for implementing the present invention, so that the present invention has no technical significance, and any structural modifications, changes in the ratio relationship, or adjustments of the sizes, without affecting the functions and purposes of the present invention, should still fall within the scope of the present invention.
FIG. 1 is a cross-sectional view of a Zap Hole structure of a Zap + INK wire process in the prior art;
FIG. 2 is an electronic analytic diagram of a Zap Hole structure of the Zap + INK wire process in the prior art;
fig. 3 is a schematic cross-sectional view of a Zap Hole structure of a wiring disconnection repairing process according to an embodiment of the present invention;
fig. 4 is an electronic analysis diagram of a Zap Hole structure of a wiring break repair process according to an embodiment of the present invention;
fig. 5 is a sample resistance test table of a wiring disconnection repairing process according to an embodiment of the present invention.
In the figure: 1. damaging the notch; 2. metal2 insulating layer; 3. metal2 Metal layer; 4. an in insulating layer; 5. a tungsten metal layer; 6. and a wiring metal layer.
Detailed Description
The present invention is described in terms of particular embodiments, other advantages and features of the invention will become apparent to those skilled in the art from the following disclosure, and it is to be understood that the described embodiments are merely exemplary of the invention and that it is not intended to limit the invention to the particular embodiments disclosed. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 3, an embodiment of the present invention provides a wiring disconnection repairing process, including:
based on a vapor deposition method, a tungsten conductive film for connecting a substrate metal layer is selectively formed in a damage notch 1 caused by excessive laser damage on metal layers on both sides of a Zap Hole in the substrate, and EHD-silver ink wiring is performed on the tungsten conductive film.
Specifically, a nanoscale cutting laser is selected, the insulation layer at the top of the broken line of the substrate emits the cutting laser to manufacture a Zap Hole, and two side edges of the Zap Hole comprise a Metal2 insulation layer 2, a Metal2 Metal layer 3(Al + Co) and a G.IN insulation layer 4 which are sequentially exposed from the top to the bottom, wherein the nanoscale cutting laser is L CVD laser repair nanoscale cutting laser carried by the Zap Hole, and the cutting laser forms a damage notch 1 on the outer side edge of the Metal2 Metal layer 3.
In most of the current panel factories, except for the trimming L aser used in the trimming process, a deposint L aser used in the wire process is also assembled in most panel factories, and the W (CO6) is the most stable Metal compound used in cooperation with the trimming L aser, so the catalytic molecule adopted in the vapor deposition method adopted by the embodiment of the invention selects W (CO)6, namely, the gaseous W (CO)6 is filled into the Zap Hole, and based on the gas property, the gaseous W (CO)6 is quickly adsorbed on the Zap Hole side wall, can completely permeate into the damaged gap 1 of the Zap Hole, the deposition laser is emitted to the Zap Hole by using the deposition laser, so that the gaseous W (CO)6 is cracked to generate a tungsten conductive film to cover the side wall of the Zap Hole and cover the damaged gap 1 of the Zap Hole, the tungsten conductive film is coated on the Zap Hole by using the deposition laser, the tungsten conductive film is adhered to the substrate, the substrate is adhered to the substrate, the substrate is adhered to be in a silver Wiring, the substrate is adhered to be adhered, the substrate is adhered, the substrate is adhered, the substrate is adhered, the silver layer, the substrate is adhered, the substrate is adhered, the silver layer, the substrate is adhered, the silver layer, the substrate is adhered, the silver layer, the substrate, the silver layer, the substrate is adhered, the substrate is adhered, the substrate, the silver layer, the silver.
In order to further prove the feasibility of the scheme, fig. 5 is a resistance test result of the Zap + W Contact + INK Wiring repair Sample, and it can be seen from the result that the measured resistance values are all less than 50 Ω, the conductive specification standard of silver in INK wire is 1um <0.5 Ω, the actual length of Sample is 200um (<100 Ω), and the measured resistance value is lower than the standard by one half, so that the feasibility of the improvement mode can be proved.
The embodiment of the invention is based on a vapor deposition principle, an existing Zap + INK Wiring process (repairing Hole + INK Wiring process) is improved into a Zap + W (tungsten) contact (Wiring type) + INK Wiring (repairing Hole + tungsten film (fixed point deposition) + INK Wiring process), namely, metal tungsten is added between an existing Zap Hole (repairing Hole) metal layer and an INK Wiring metal layer to serve as a conductive medium, so that under the condition that the surface of the Zap Hole is completely covered by the tungsten metal layer, the filling effect of a silver INK solution is very ideal, the silver INK solution can be completely attached to the upper part of the tungsten metal layer after liquid curing reaction is finished, the silver and the metal layer below a substrate insulating layer are good in the fusion welding process, namely, the conductive laser does not need to be replaced, L is adopted to repair high-resolution nanoscale cutting laser and W (CO)6 carried by the self-laser, the array can replace the femtosecond laser repairing laser, the final INK cutting laser repairing process can be completed by using L, the high-resolution nanoscale cutting laser and W (CO) to replace a femtosecond laser, the final laser repairing process can be used for repairing the array, the panel, the cost is greatly reduced by a ten thousand-level laser, and the cost of a huge laser repairing process is increased, so that the cost of a large-scale laser repairing process of a large-scale laser repairing robot panel is increased, the photovoltaic (L) is increased), and the cost is increased, and the cost of a large-scale laser repairing process is increased, and the micro-coin.
As described above, from the results, it was confirmed that the mean value of the resistance values measured by polishing was less than 50 Ω, the conductive specification of silver in the INK wiring was 1um <0.5 Ω, the actual length of the sample was 200um (<100 Ω), and the resistance value was measured to be lower by one-half than the standard specification, and thus the above-described improvement was possible.
Although the invention has been described in detail above with reference to a general description and specific examples, it will be apparent to one skilled in the art that modifications or improvements may be made thereto based on the invention. Accordingly, such modifications and improvements are intended to be within the scope of the invention as claimed.
Claims (8)
1. A wiring disconnection repairing process is characterized by comprising the following steps: based on a vapor deposition method, a tungsten conductive film for connecting the metal layers of the substrate is selectively formed in a damage notch caused by excessive laser damage on the metal layers on both sides of the Zap Hole in the substrate, and EHD-silver ink wiring is performed on the tungsten conductive film.
2. The wiring break repair process according to claim 1, further comprising: and (3) selecting nanoscale cutting laser, and emitting the cutting laser on the insulating layer at the top of the broken line of the substrate to manufacture a Zap Hole.
3. The wiring disconnection repairing process according to claim 2, further comprising: two side edges of the Zap Hole comprise a Metal2 insulating layer, a Metal2 Metal layer (Al + Co) and a G.IN insulating layer which are sequentially exposed from top to bottom, wherein the cutting laser forms a damage notch on the outer side edge of the Metal2 Metal layer.
4. The wiring break repair process of claim 2, further comprising the step of using the nanoscale cutting laser to repair the self-contained nanoscale cutting laser by using L CVD laser.
5. The wiring break repair process according to claim 1, further comprising: the catalytic molecule adopted by the vapor deposition method is selected from W (CO) 6.
6. The wiring disconnection repairing process according to claim 5, further comprising: filling gaseous W (CO)6 into the Zap Hole, and enabling the gaseous W (CO)6 to be adsorbed on the side wall of the Zap Hole and permeate into the damage gap of the Zap Hole based on the gas property of the gaseous W (CO) 6.
7. The wiring break repair process according to claim 6, further comprising: selecting deposition laser, emitting the deposition laser to the Zap Hole, and leading the deposition laser to induce the cracking of gaseous W (CO)6 to generate a layer of tungsten conductive film to cover the side wall and the gap of the Zap Hole, and the tungsten conductive film is positioned at the bottom of the Zap Hole and connected with the broken line parts at two sides of the Zap Hole to form a conductive layer-tungsten Metal layer, wherein the tungsten Metal layer sequentially covers the Metal2 insulating layer, the Metal2 Metal layer and the G.IN insulating layer from top to bottom.
8. The wiring break repair process according to claim 7, further comprising: and injecting silver ink solution into the Zap Hole, and attaching the solidified silver ink solution to the outer wall of the tungsten metal layer to form a wiring metal layer-Ag metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010183675.XA CN111446173A (en) | 2020-03-16 | 2020-03-16 | Wiring broken wire repairing process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010183675.XA CN111446173A (en) | 2020-03-16 | 2020-03-16 | Wiring broken wire repairing process |
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| CN111446173A true CN111446173A (en) | 2020-07-24 |
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| CN202010183675.XA Pending CN111446173A (en) | 2020-03-16 | 2020-03-16 | Wiring broken wire repairing process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022227291A1 (en) * | 2021-04-28 | 2022-11-03 | Tcl华星光电技术有限公司 | Display panel and manufacturing method therefor, and display apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022227291A1 (en) * | 2021-04-28 | 2022-11-03 | Tcl华星光电技术有限公司 | Display panel and manufacturing method therefor, and display apparatus |
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