CN111446162B - Method for producing crystal grains with front cutting and twice thinning - Google Patents
Method for producing crystal grains with front cutting and twice thinning Download PDFInfo
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- CN111446162B CN111446162B CN202010166910.2A CN202010166910A CN111446162B CN 111446162 B CN111446162 B CN 111446162B CN 202010166910 A CN202010166910 A CN 202010166910A CN 111446162 B CN111446162 B CN 111446162B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
The invention discloses a method for producing crystal grains with twice thinned front surfaces by cutting, which comprises the following steps: front cutting, primary fixing, primary thinning, intermediate process, secondary thinning, adhesive removing, metal deposition process, secondary fixing, separation of the glass carrier plate and solvent cleaning. The invention realizes the front cutting and twice thinning of the wafer by cutting, primary fixing, primary thinning, intermediate process, secondary thinning, adhesive removing, metal deposition process, secondary fixing, separation from the glass carrier plate and solvent cleaning to obtain the crystal grains, replaces the traditional one-time cutting mode, reduces the damage of the cutting to the crystal grains, improves the finished product qualification rate of the crystal grains, shortens the cutting time of single qualified crystal grains, replaces the traditional technology of finishing back yellow light, ion injection and metal deposition before cutting, and is beneficial to controlling the production cost of the crystal grains.
Description
Technical Field
The invention relates to a production method, in particular to a production method of crystal grains with twice thinning by cutting on the front surface.
Background
An ultra-thin wafer, typically 20-250 microns thick, is used for power devices and 3-D devices in MOSFETlandiGBT. At present, a wafer and a glass carrier plate are bonded, the glass carrier plate is utilized to transmit the wafer for wafer thinning, back surface yellow light, ion implantation, metal deposition and other processes are carried out, finally, crystal grain cutting and subsequent testing and packaging are carried out on a crystal grain film frame, yellow light, ion implantation and metal deposition processes are carried out on the back surface of the thinned wafer, but the crystal grain cutting process of the wafer is carried out, the wafer is thinned to be a wafer with the grain size of 20-80 microns, when the crystal grain is cut, due to the warping property of the thin wafer and the fact that the wafer finishes metal deposition, when external force cutting is carried out, stress changes during cutting easily causes the wafer to crack, the crystal grain cannot be reworked and scrapped, the back surface yellow light, the ion implantation and the metal deposition processes are mostly finished before cutting in the prior art, the crystal grain is easily damaged during cutting, and the production cost of the crystal grain is increased.
Disclosure of Invention
The invention aims to provide a method for producing crystal grains with twice thinning by front cutting, which is used for cutting and thinning a wafer twice to obtain the crystal grains by cutting, fixing once, thinning once, performing an intermediate process, thinning twice, removing an adhesive, performing a metal deposition process, fixing twice, separating from a glass carrier plate and cleaning a solvent.
The purpose of the invention can be realized by the following technical scheme:
a production method of crystal grains with twice thinning by front cutting comprises the following steps:
s1: front cutting
And cutting the wafer.
S2: one-time fixation
And bonding the front surface of the wafer cut on the glass carrier plate by using an adhesive.
S3: one-time thinning
And thinning the back of the cut wafer for one time.
S4: intermediate process
Back side yellow light, ion implantation.
S5: secondary thinning
And thinning the back of the cut wafer for the second time.
S6: adhesive removal
Oxygen plasma is used to etch the adhesive between adjacent grains.
S7: metal deposition process
And carrying out metal deposition process on the thinning surface of the crystal grain by sputtering or evaporation or chemical plating or electroplating.
S8, secondary fixation
And fixing the thinning surface of the crystal grain on a UV film frame, wherein a UV type adhesive film is arranged on the UV film frame.
S9: separated glass carrier plate
And debonding by adopting a laser or thermal decomposition mode, separating the wafer from the glass carrier plate, and adhering the crystal grains on the UV film frame.
S10: solvent cleaning
The adhesive is peeled off the die.
Further, the cutting method is one of diamond cutting, laser cutting and plasma cutting.
Further, the front side of the crystal grain is cut to the position X when the crystal grain is cut, wherein X is the thickness of the wafer after the final thinning is expected to be completed.
Further, the wafer and the glass carrier plate are bonded together through UV bonding by the adhesive for primary fixing, the temperature is required to be 50-200 ℃, and the using time is below 30 minutes.
Furthermore, the adhesive for primary fixation bonds the wafer and the glass carrier together by heating bonding, the temperature is required to be 150-300 ℃, and the using time is below 30 minutes.
Further, the method adopted by the primary thinning is etching or grinding.
Further, the secondary thinning adopts a method of etching or grinding.
Furthermore, the thickness of the primary thinning is 1.01Y-1.2Y, and Y is more than or equal to 1.05X and less than or equal to 1.3X.
Further, the secondary thinning is carried out until the thickness is preset X.
The invention has the beneficial effects that:
1. the front face of the wafer is cut and thinned twice through cutting, primary fixing, primary thinning, an intermediate process, secondary thinning, adhesive removing, a metal deposition process, secondary fixing, separation from a glass carrier plate and solvent cleaning to obtain crystal grains, the traditional one-time cutting mode is replaced, and damage of cutting to the crystal grains is reduced;
2. the invention realizes the front cutting and twice thinning of the wafer by cutting, primary fixing, primary thinning, intermediate process, secondary thinning, adhesive removing, metal deposition process, secondary fixing, separation from the glass carrier plate and solvent cleaning to obtain the crystal grains, reduces the damage of the cutting to the crystal grains, improves the finished product qualification rate of the crystal grains, shortens the cutting time of single qualified crystal grains, replaces the traditional technology of finishing back yellow light, ion injection and metal deposition before cutting, and is beneficial to controlling the production cost of the crystal grains.
Drawings
The invention will be further described with reference to the accompanying drawings.
FIG. 1 is a schematic view of a one-time fixing structure of the present invention;
FIG. 2 is a schematic view of a one-time thinning structure of the present invention;
FIG. 3 is a schematic diagram of an intermediate process of the present invention;
FIG. 4 is a schematic diagram of a secondary thinning structure of the present invention;
FIG. 5 is a schematic view of an adhesive removal structure of the present invention;
FIG. 6 is a schematic view of the secondary fastening structure of the present invention;
FIG. 7 is a schematic view of a detached glass carrier structure according to the present invention;
FIG. 8 is a schematic view of a solvent cleaning configuration of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
A production method of crystal grains with twice thinning by front cutting comprises the following steps:
s1: front cutting
And cutting the wafer 1 by adopting a diamond cutting mode, cutting the crystal grains 4 from the front surfaces of the crystal grains 4 when the crystal grains 4 are cut to 1.05X, wherein X is the thickness of the wafer 1 after the thinning is expected to be finished finally.
S2: once fixing
The front face of the wafer 1 cut is bonded on the glass carrier plate 2 by using an adhesive 3, as shown in fig. 1, the wafer 1 and the glass carrier plate 2 are bonded together by the adhesive 3 through UV bonding, the temperature is required to be 50-200 ℃, and the using time is less than 30 minutes.
S3: one-time thinning
The back surface of the wafer 1 after dicing was thinned once by grinding, and the thickness thinned once was 1.01y and y =1.05x as shown in fig. 2.
S4: intermediate process
And performing ion implantation to form an ion implantation layer 6 on the back of the crystal grain 4, removing the photoresist, and performing an annealing process as shown in fig. 3.
S5: secondary thinning
The back surface of the diced wafer 1 is thinned a second time by etching to a predetermined X thickness as shown in fig. 4.
S6: adhesive 3 removal
The adhesive 3 between the adjacent crystal grains 4 is etched by oxygen plasma, and a groove is formed on the adhesive 3 as shown in fig. 5.
S7: metal deposition process
The thinned surface of the crystal grain 4 is subjected to a metal deposition process by sputtering.
S8, secondary fixation
The thinned surface of the crystal grain 4 is fixed on a UV film frame 5, and as shown in FIG. 6, a UV type adhesive film is arranged on the UV film frame 5.
S9: separate from the glass carrier plate 2
And (3) debonding by adopting a laser mode, separating the wafer 1 from the glass carrier plate 2, and adhering the crystal grains 4 on the UV film frame 5.
S10: solvent cleaning
The adhesive 3 is peeled off from the crystal grains 4.
Example 2
A production method of crystal grains with twice thinning by front cutting comprises the following steps:
s1: front cutting
And cutting the wafer 1 by adopting a laser cutting mode, wherein the crystal grain 4 is cut from the front side of the crystal grain 4 to 1.2X, and X is the thickness of the wafer 1 after the final thinning is expected.
S2: once fixing
The front face of the wafer 1 cut is bonded on the glass carrier plate 2 by adopting an adhesive 3, the wafer 1 and the glass carrier plate 2 are bonded together by the adhesive through heating bonding, the temperature is required to be 150-300 ℃, and the using time is below 30 minutes.
S3: one-time thinning
The back surface of the wafer 1 after dicing was thinned once by etching, and the thickness of the thinned once was 1.1y, y =1.2x.
S4: intermediate process
And (4) performing back side yellow light, performing ion implantation, forming an ion implantation layer 6 on the back side of the crystal grain 4, removing the photoresist, and performing an annealing process.
S5: secondary thinning
And (3) carrying out secondary thinning on the back surface of the cut wafer 1 by grinding to a preset thickness X.
S6: adhesive 3 removal
The adhesive 3 between adjacent grains 4 is etched using oxygen plasma to form grooves in the adhesive 3.
S7: metal deposition process
The thinned surface of the crystal grain 4 is subjected to a metal deposition process by evaporation.
S8, secondary fixation
And fixing the thinning surface of the crystal grain 4 on a UV film frame 5, wherein a UV type adhesive film is arranged on the UV film frame 5.
S9: separate from the glass carrier plate 2
And (4) debonding by adopting a thermal decomposition mode to separate the wafer 1 from the glass carrier plate 2, wherein the crystal grains 4 are adhered on the UV film frame 5.
S10: solvent cleaning
The adhesive 3 is peeled off from the crystal grains 4.
Example 3
A production method of crystal grains with twice thinning by front cutting comprises the following steps:
s1: front cutting
And cutting the wafer 1 by adopting a plasma cutting mode, cutting the crystal grain 4 from the front side of the crystal grain 4 when cutting the crystal grain 4 to a position of 1.3X, wherein X is the thickness of the wafer 1 after the final thinning is expected.
S2: once fixing
The front face of the wafer 1 cut is bonded on the glass carrier plate 2 by adopting an adhesive 3, the wafer 1 and the glass carrier plate 2 are bonded together by the adhesive 3 through heating bonding, the temperature is required to be 150-300 ℃, and the using time is below 30 minutes.
S3: one-time thinning
The back surface of the wafer 1 after dicing is thinned once by etching, and the thickness of the thinned once is 1.2y, y =1.3x.
S4: intermediate process
And (4) performing back side yellow light, performing ion implantation, forming an ion implantation layer 6 on the back side of the crystal grain 4, removing the photoresist, and performing an annealing process.
S5: secondary thinning
And (3) thinning the back surface of the cut wafer 1 for the second time by etching to a preset thickness X.
S6: adhesive 3 removal
The adhesive 3 between adjacent grains 4 is etched using oxygen plasma to form grooves in the adhesive 3.
S7: metal deposition process
And carrying out a metal deposition process on the thinned surface of the crystal grain 4 through chemical plating.
S8, secondary fixation
And fixing the thinning surface of the crystal grain 4 on a UV film frame 5, wherein a UV type adhesive film is arranged on the UV film frame 5.
S9: separate from the glass carrier plate 2
And (3) debonding by adopting a laser mode, separating the wafer 1 from the glass carrier plate 2, and adhering the crystal grains 4 on the UV film frame 5.
S10: solvent cleaning
The adhesive 3 is peeled off from the crystal grains 4.
Example 4
A production method of crystal grains with twice thinning by front cutting comprises the following steps:
s1: front cutting
And cutting the wafer 1 by adopting a plasma cutting mode, wherein the front side of the crystal grain 4 is cut to 1.25X when the crystal grain 4 is cut, and X is the thickness of the wafer 1 after the final thinning is expected.
S2: once fixing
The front surface of the cut wafer 1 is bonded on the glass carrier plate 2 by adopting an adhesive 3, the wafer 1 and the glass carrier plate 2 are bonded together by the adhesive 3 through heating bonding, the temperature is required to be 150-300 ℃, and the using time is below 30 minutes.
S3: one-time thinning
The back surface of the wafer 1 after dicing is thinned once by etching, and the thickness of the thinned once is 1.2y, y =1.25x.
S4: intermediate process
And (4) performing back side yellow light, performing ion implantation, forming an ion implantation layer 6 on the back side of the crystal grain 4, removing the photoresist, and performing an annealing process.
S5: secondary thinning
And thinning the back surface of the cut wafer 1 for the second time to a preset thickness X by etching.
S6: adhesive 3 removal
The adhesive 3 between adjacent crystal grains 4 is etched by oxygen plasma to form grooves on the adhesive 3.
S7: metal deposition process
Performing a metal deposition process on the thinned surface of the crystal grain 4 through electroplating;
s8, secondary fixation
And fixing the thinning surface of the crystal grain 4 on a UV film frame 5, wherein a UV type adhesive film is arranged on the UV film frame 5.
S9: separate from the glass carrier plate 2
And (4) debonding by adopting a thermal decomposition mode to separate the wafer 1 from the glass carrier plate 2, wherein the crystal grains 4 are adhered on the UV film frame 5.
S10: solvent cleaning
The adhesive 3 is peeled off from the crystal grains 4.
Comparative example 1
The wafer 1 is cut at a time.
The yield of the finished product cut in the above embodiment and the cutting time of a single qualified die 4 are counted, and the statistical results are shown in the following table:
in conclusion, the traditional cutting mode is replaced by the step-by-step cutting mode, the product finished product qualified rate is improved, the production cost is reduced, and the efficiency is improved.
The wafer 1 is cut to form the crystal grains 4, and the crystal grains 4 are bonded on the glass carrier plate 2, so that the traditional one-time cutting mode is replaced, the damage of the cutting to the crystal grains 4 is reduced, the finished product qualification rate of the crystal grains 4 is improved, and the production cost of the crystal grains 4 is favorably controlled.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are given by way of illustration of the principles of the present invention, but that various changes and modifications may be made without departing from the spirit and scope of the invention, and such changes and modifications are within the scope of the invention as claimed.
Claims (9)
1. A method for producing crystal grains with twice thinning by front cutting is characterized in that a back processing technology comprises the following steps:
s1: front cutting
Cutting the wafer (1);
s2: once fixing
Bonding the front cut surface of the wafer (1) on the glass carrier plate (2) by using an adhesive (3);
s3: one-time thinning
Thinning the back of the cut wafer (1) for one time;
s4: intermediate process
Performing back side yellow light, performing ion implantation, forming an ion implantation layer (6) on the back side of the crystal grain (4), removing the photoresist, and performing an annealing process;
s5: secondary thinning
Carrying out secondary thinning on the back of the cut wafer (1);
s6: adhesive (3) removal
Etching the adhesive (3) between adjacent grains (4) with an oxygen plasma;
s7: metal deposition process
Performing a metal deposition process on the thinning surface of the crystal grain (4) through sputtering or evaporation or chemical plating or electroplating;
s8, secondary fixation
Fixing the thinned surface of the crystal grain (4) on a UV film frame (5), wherein a UV type adhesive film is arranged on the UV film frame (5);
s9: separation glass support plate (2)
Debonding by adopting a laser or thermal decomposition mode, separating the wafer (1) from the glass carrier plate (2), and adhering the crystal grains (4) on the UV film frame (5);
s10: solvent cleaning
The adhesive (3) is peeled off from the crystal grains (4).
2. The method for producing the front-cut twice-thinned grains according to claim 1, wherein the cutting method is one of diamond cutting, laser cutting and plasma cutting.
3. The method for producing the die with twice thinned front surface as claimed in claim 1, wherein the die (4) is cut from the front surface of the die (4) to 1.05x to 1.3X, where X is the thickness of the wafer (1) after thinning is expected to be completed.
4. The method for producing the front-cut twice-thinned crystalline grain according to claim 1, wherein the once-fixed adhesive (3) bonds the wafer (1) and the glass carrier plate (2) together by UV bonding, the temperature is required to be 50-200 ℃, and the use time is less than 30 minutes.
5. The method for producing the front-cut twice-thinned grain as claimed in claim 1, wherein the once-fixed adhesive (3) bonds the wafer (1) and the glass carrier plate (2) together by thermal bonding at a temperature of 150-300 ℃ for less than 30 minutes.
6. The method for producing the crystal grains subjected to the front cutting and the double thinning according to claim 1, wherein the method for the single thinning is etching or grinding.
7. The method for producing the crystal grains subjected to the front cutting and the double thinning according to claim 1, wherein the method for the double thinning is etching or grinding.
8. The method for producing the crystal grains cut twice in the front face and thinned twice as claimed in claim 3, wherein the thickness of the crystal grains thinned once is 1.01Y to 1.2Y, and Y is more than or equal to 1.05X and less than or equal to 1.3X.
9. The method for producing the front-cut double-thinned die according to claim 3, wherein the secondary thinning is performed to a predetermined X thickness.
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| CN114573238A (en) * | 2022-02-23 | 2022-06-03 | 苏州轩创科技有限公司 | Thinning method of CIS glass cover |
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