CN111443521B - Display panel, preparation method thereof and display device - Google Patents
Display panel, preparation method thereof and display device Download PDFInfo
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- CN111443521B CN111443521B CN202010347420.2A CN202010347420A CN111443521B CN 111443521 B CN111443521 B CN 111443521B CN 202010347420 A CN202010347420 A CN 202010347420A CN 111443521 B CN111443521 B CN 111443521B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Abstract
The invention provides a display panel, a preparation method thereof and a display device. The sub-pixels of the display panel are divided into a main area and a secondary area, and pixel electrodes of the main area and the secondary area are driven by the same thin film transistor; the second substrate of the display panel comprises a common electrode, a second alignment film positioned on the common electrode, and a shielding electrode positioned on the second alignment film; wherein the shielding electrode is disposed corresponding to the secondary region. The invention reduces the area occupation ratio of the TFT device and improves the aperture opening ratio and the penetration rate.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel, a preparation method thereof and a display device.
Background
The liquid crystal display includes a plurality of display modes such as a Twisted Nematic (TN) mode, an Electronically Controlled Birefringence (ECB) mode, an in-plane switching (IPS) mode, and a Vertical Alignment (VA) mode. Among them, the VA mode is a common display mode having advantages of high contrast ratio, wide viewing angle, no rubbing alignment, and the like. At present, a VA pixel design of 8-domain 3T (TFT) is generally adopted, so that the rotation angles of liquid crystal molecules of 4 domains of a main area and 4 domains of a secondary area in the same sub-pixel are different, and the color cast is improved. But the 3T design occupies a larger space, thereby reducing the aperture ratio of the pixel, and thus the transmittance of the display.
With the continuous improvement of the resolution of mainstream products (HD- & gtFHD- & gt4K- & gt8K), the TFT device has a larger and larger duty ratio in the pixel due to the limitation of process precision, so that the transmittance of the display product with high resolution is rapidly reduced. Therefore, it is necessary to improve this defect.
Disclosure of Invention
The embodiment of the invention provides a display panel, which is used for solving the technical problem that the penetration rate of the display panel is affected due to insufficient opening rate of sub-pixels caused by large occupied space of three TFTs due to the adoption of an 8-domain 3T pixel design of the display panel in the prior art.
The embodiment of the invention provides a display panel, which comprises a first substrate, a second substrate and a liquid crystal molecular layer, wherein the first substrate and the second substrate are arranged in a box, and the liquid crystal molecular layer is positioned between the first substrate and the second substrate. The first substrate comprises a first substrate layer, a pixel electrode layer positioned on the first substrate layer, and a first alignment film positioned on the pixel electrode layer; the pixel electrode layer comprises a plurality of sub-pixels distributed in an array, the sub-pixels are divided into a main area and a secondary area, and the pixel electrodes of the main area and the secondary area are driven by the same thin film transistor. The second substrate includes a second substrate layer, a black matrix on the second substrate layer, a common electrode on the second substrate layer and between the black matrices, a second alignment film on the common electrode, and a shielding electrode on the second alignment film. Wherein the black matrix is disposed corresponding to a gap between the main region and the sub region, and the shielding electrode is disposed corresponding to the sub region.
Further, the material of the shielding electrode is prepared by reacting a supermolecule material with trimethylolpropane, a carbon nanotube and/or graphene.
Further, the supramolecular material is a low molecular weight monomer based on three ureido-4-pyrimidinone functional groups.
Further, the shielding electrode has a thickness in a range of greater than 0 and less than or equal to 0.2 microns.
Further, the area ratio of the primary region to the secondary region ranges from greater than or equal to 0.3 to less than or equal to 1.
Further, the main region and the secondary region are both positioned on the same side of the thin film transistor.
Further, the main area and the secondary area are respectively positioned at two sides of the thin film transistor.
Further, a color resist layer is disposed between the first substrate layer and the pixel electrode layer.
The embodiment of the invention provides a preparation method of a display panel, which comprises the following steps: providing a first substrate layer; preparing a pixel electrode layer on the first substrate layer, wherein the pixel electrode layer comprises a plurality of sub-pixels distributed in an array, the sub-pixels are divided into a main area and a secondary area, and pixel electrodes of the main area and the secondary area are driven by the same thin film transistor; preparing a first alignment film on the pixel electrode layer to prepare a first substrate; providing a second substrate layer; preparing a black matrix on the second substrate layer, the black matrix being disposed corresponding to a gap between the primary region and the secondary region; preparing a common electrode on the second substrate layer, the common electrode being located between the black matrices; preparing a second alignment film on the common electrode; preparing a shielding electrode on the second alignment film, wherein the shielding electrode is arranged corresponding to the secondary region, so as to prepare a second substrate; and aligning the first substrate and the second substrate, and filling liquid crystal molecules between the first substrate and the second substrate to obtain the display panel.
The embodiment of the invention provides a display device which comprises the display panel.
The beneficial effects are that: according to the display panel provided by the embodiment of the invention, the opening area of the sub-pixel is divided into the main area and the secondary area, the driving circuits of the main area and the secondary area are communicated and connected to the same TFT, meanwhile, a layer of shielding electrode is added in the secondary area, the voltage/electric field intensity of the secondary area is controlled by adjusting the shielding intensity, two electric fields with different intensities are formed, and the deflection of liquid crystals with different degrees is realized, so that the eight-domain display effect is realized by one TFT driving, the area ratio of a TFT device is reduced, and the opening ratio and the penetration rate are improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a basic structure of a display panel according to an embodiment of the present invention;
FIG. 2 is a graph of electromagnetic shielding attenuation versus frequency for materials of shielding electrodes provided by embodiments of the present invention;
FIG. 3 is a schematic diagram of a basic structure of a sub-pixel according to an embodiment of the present invention;
fig. 4 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
As shown in fig. 1, the basic structure of a display panel provided by an embodiment of the present invention, which includes a first substrate and a second substrate disposed opposite to each other, and a liquid crystal molecular layer 101 between the first substrate and the second substrate, is schematically shown, from which each component of the present invention, and the relative positional relationship between each component, can be seen intuitively. The first substrate includes a first substrate layer 102, a pixel electrode layer 103 on the first substrate layer 102, and a first alignment film 104 on the pixel electrode layer 103; the pixel electrode layer 103 includes a plurality of sub-pixels (not shown) distributed in an array, the sub-pixels are divided into a main region Z1 and a sub-region Z2, and pixel electrodes (not shown) of the main region Z1 and the sub-region Z2 are driven by the same thin film transistor (not shown). The second substrate includes a second substrate layer 105, a black matrix 106 on the second substrate layer 105, a common electrode 107 on the second substrate layer 105 and between the black matrices 106, a second alignment film 108 on the common electrode 107, and a shielding electrode 109 on the second alignment film 108. Wherein the black matrix 106 is disposed corresponding to a gap between the primary zone Z1 and the secondary zone Z2, and the shielding electrode 109 is disposed corresponding to the secondary zone Z2.
It should be noted that, in this embodiment, the opening area of the sub-pixel is divided into two areas, namely, a main area Z1 and a sub-area Z2, the driving lines of the main area Z1 and the sub-area Z2 are communicated and connected to the same TFT, a shielding electrode 109 is added to the sub-area Z2, and the voltage/electric field intensity of the sub-area Z2 is reduced by adjusting the shielding intensity. In this embodiment, the same TFT is used to provide voltage, and the main area Z1 and the sub area Z2 form different electric field intensities due to the difference of the shielding electrode 109, so as to realize different degrees of deflection of the liquid crystal, thereby realizing that 1 TFT is driven to achieve the eight-domain display effect of VA mode, reducing the area occupation ratio of the TFT, and improving the aperture ratio and the penetration rate.
In one embodiment, a color resist layer 110 is disposed between the first substrate layer 102 and the pixel electrode layer 103. A first passivation layer 111 is disposed between the color resist layer 110 and the pixel electrode layer 103, and in some embodiments, a tetrafluoroethylene-perfluoroalkoxy vinyl ether copolymer is disposed between the color resist layer 110 and the pixel electrode layer 103; a second passivation layer 112 and a gate insulating layer 113 are disposed between the color resist layer 110 and the first substrate layer 102, wherein the second passivation layer 112 is disposed near the color resist layer 110, and the gate insulating layer 113 is disposed near the first substrate layer 102.
As shown in fig. 2, a graph of electromagnetic shielding attenuation versus frequency of a material of a shielding electrode provided by an embodiment of the present invention, where a solid line in the graph indicates that an electromagnetic shielding material doped in the shielding electrode is a carbon nanotube, and the doping content of the carbon nanotube is 6%; the dotted line shows that the electromagnetic shielding material doped in the shielding electrode is a carbon nanotube, and the doping content of the carbon nanotube is 10%; the dash-dot line indicates that the electromagnetic shielding material doped in the shielding electrode is carbon nano tube and graphene, the doping content of the carbon nano tube is 5.6%, and the doping content of the graphene is 0.4%; the two-dot chain line shows that the electromagnetic shielding material doped in the shielding electrode is carbon nanotube and graphene, the doping content of the carbon nanotube is 5.8%, and the doping content of the graphene is 0.6%.
When the electromagnetic wave reaches the surface of the shielding electrode, the incident wave is reflected due to the discontinuity of impedance at the interface between the air and the metal, and the reflection does not require a certain thickness of the shielding electrode material, but only requires the discontinuity at the interface. The energy entering the shielding electrode without being reflected off the surface is attenuated by the shielding electrode material during the propagation forward inside, so-called absorption. When the remaining energy which has not been attenuated in the shielding electrode passes to the other surface of the shielding electrode, the interface of the metal and air is encountered, and due to the discontinuity in impedance, a re-reflection is formed and is returned to the shielding electrode, and the reflection may have multiple reflections at the interface of the two metals. In summary, the attenuation of electromagnetic energy by shielding electrodes is based primarily on the reflection, absorption and guiding of electromagnetic energy flow. That is, the action mechanism of the shielding electrode refers to that the penetration of an alternating electromagnetic field to a designated area is reduced by using a conductive material, which is closely related to the charge, current and polarization phenomena induced on the surface of the shielding electrode and in the shielding electrode.
The electromagnetic shielding effectiveness of the shielding electrode may be expressed by an electromagnetic shielding coefficient or an electromagnetic shielding attenuation. In the space guard region, the ratio of the field strength (E0 or H0) in the presence of a shielded electrode to the field strength (E or H) in the presence of an unshielded electrode, EO/E or H0/H, is referred to as the shielding factor. The smaller the shielding coefficient, the better the shielding effect. The shielding effect can also be expressed in terms of shielding attenuation, which represents the attenuation value to which the interfering field strength is subjected by the shielding electrode. The shielding attenuation can be determined in decibels (dB) from 201g (EO/E) or 201g (H0/H). The larger the shielding attenuation value, the better the shielding effect. As can be seen from fig. 2, the shielding effect is best when the electromagnetic shielding material incorporated in the shielding electrode is carbon nanotubes and graphene, and the doping content of the carbon nanotubes is 5.6% and the doping content of the graphene is 0.4%.
In one embodiment, the material of the shielding electrode is prepared by reacting a supramolecular material with trimethylolpropane, carbon nanotubes and/or graphene. Specifically, the supramolecular material is a low molecular weight monomer based on three ureido-4-pyrimidinone functional groups.
In one embodiment, the thickness of the shielding electrode ranges from greater than 0 and less than or equal to 0.2 microns, but is not limited thereto.
As shown in fig. 3, in the basic structure of the sub-pixel according to the embodiment of the present invention, the sub-pixel is divided into a main area Z1 and a sub-area Z2, and the pixel electrodes of the main area Z1 and the sub-area Z2 are driven by the same thin film transistor 114.
In one embodiment, the area ratio of the primary zone Z1 to the secondary zone Z2 ranges from greater than or equal to 0.3 to less than or equal to 1.
In one embodiment, the primary region Z1 and the secondary region Z2 are both located on the same side of the thin film transistor 114 (as shown in fig. 3). In some embodiments, the relative positions of the primary zone Z1 and the secondary zone Z2 are not limited, and may be interchanged, i.e., the secondary zone Z2 may be disposed close to the thin film transistor 114 and the primary zone Z1 may be disposed far from the thin film transistor 114.
In one embodiment, the primary region Z1 and the secondary region Z2 are located on both sides of the thin film transistor 114, respectively.
As shown in fig. 4, a flowchart of a preparation method of a display panel according to an embodiment of the present invention includes the steps of:
s401, providing a first substrate layer;
s402, preparing a pixel electrode layer on the first substrate layer, wherein the pixel electrode layer comprises a plurality of sub-pixels distributed in an array, the sub-pixels are divided into a main area and a secondary area, and pixel electrodes of the main area and the secondary area are driven by the same thin film transistor;
s403, preparing a first alignment film on the pixel electrode layer to prepare a first substrate;
s404, providing a second substrate layer;
s405, preparing a black matrix on the second substrate layer, wherein the black matrix is arranged corresponding to a gap between the main area and the secondary area;
s406, preparing a common electrode on the second substrate layer, wherein the common electrode is positioned between the black matrixes;
s407, preparing a second alignment film on the public electrode;
s408, preparing a shielding electrode on the second alignment film, wherein the shielding electrode is arranged corresponding to the secondary region, and preparing a second substrate;
s409, the first substrate and the second substrate are paired, and liquid crystal molecules are filled between the first substrate and the second substrate, so that the display panel is manufactured.
The preparation method of the shielding electrode specifically comprises the following steps: an electromagnetic shielding coating material is coated on a substrate, and then a rapid film is fixed by using UV irradiation. The matrix has the characteristics of easy coating and film forming and the penetration rate of more than 90 percent.
It should be noted that the electromagnetic shielding coating material may be prepared by reacting a supramolecular material with trimethylolpropane, carbon nanotubes and/or graphene under the catalysis of dibutyltin dilaurate (the reaction temperature is 120 ℃), the reaction is essentially hydrogen bonding, the solvent is pyridine, the pyridine is an organic compound, and the pyridine is a six-membered heterocyclic compound containing one nitrogen heteroatom. Specifically, the supramolecular material is a low molecular weight monomer based on three ureido-4-pyrimidinone functional groups. In other embodiments, the electromagnetic shielding coating material is not limited thereto.
In one embodiment, the electromagnetic shielding coating material is applied in a UV wavelength range of 320-390 nm and an illuminance range of 400-600 mW/cm 2 And (3) performing curing and shaping after the irradiation time is less than 1 min.
In one embodiment, the depressurization of the secondary zone may be achieved by zone-coating and shaping the electromagnetic shielding coating material with matrix assistance.
The embodiment of the invention also provides a display device which comprises the display panel. The display device provided by the embodiment of the invention can be as follows: any product or component with display function such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital camera, a navigator and the like.
In summary, in the display panel provided by the embodiment of the invention, the opening area of the sub-pixel is divided into the main area and the sub-area, the driving circuits of the main area and the sub-area are communicated and connected to the same TFT, meanwhile, a layer of shielding electrode is added in the sub-area, and the voltage/electric field intensity of the sub-area is controlled by adjusting the shielding intensity to form two electric fields with different intensities, so that the deflection of the liquid crystal is realized to different degrees, thereby realizing the effect of eight domains by one TFT driving, reducing the area occupation ratio of the TFT device, improving the opening ratio and the penetration ratio, and solving the technical problems that the display panel in the prior art adopts the 8 domain 3T pixel design, and the three TFTs occupy larger space, so that the opening ratio of the sub-pixel is insufficient, and the penetration ratio of the display panel is affected.
The display panel, the preparation method and the display device provided by the embodiment of the invention are described in detail. It should be understood that the exemplary embodiments described herein are to be considered merely descriptive for aiding in the understanding of the method of the present invention and its core concepts and not for limiting the invention.
Claims (8)
1. A display panel comprising a first substrate and a second substrate arranged in a pair of cells, and a liquid crystal molecular layer between the first substrate and the second substrate;
the first substrate comprises a first substrate layer, a pixel electrode layer positioned on the first substrate layer, and a first alignment film positioned on the pixel electrode layer; the pixel electrode layer comprises a plurality of sub-pixels distributed in an array, the sub-pixels are divided into a main area and a secondary area, and pixel electrodes of the main area and the secondary area are driven by the same thin film transistor;
the second substrate comprises a second substrate layer, black matrixes positioned on the second substrate layer, common electrodes positioned on the second substrate layer and positioned between the black matrixes, a second alignment film positioned on the common electrodes, and shielding electrodes positioned on the second alignment film, wherein the common electrodes correspond to pixel electrodes of the main area and the secondary area;
wherein the black matrix is arranged corresponding to a gap between the main region and the secondary region, and the shielding electrode is arranged corresponding to the secondary region;
the shielding electrode material is prepared by reacting a supermolecular material with trimethylolpropane and a carbon nanotube, or by reacting a supermolecular material with trimethylolpropane, a carbon nanotube and graphene, and the supermolecular material is a low molecular weight monomer based on three ureido-4-pyrimidinone functional groups.
2. The display panel of claim 1, wherein the shielding electrode has a thickness in a range of greater than 0 and less than or equal to 0.2 microns.
3. The display panel of claim 1, wherein an area ratio of the primary region to the secondary region ranges from greater than or equal to 0.3 to less than or equal to 1.
4. The display panel of claim 1, wherein the primary region and the secondary region are both located on the same side of the thin film transistor.
5. The display panel of claim 1, wherein the primary region and the secondary region are located on both sides of the thin film transistor, respectively.
6. The display panel of claim 1, wherein a color resist layer is disposed between the first substrate layer and the pixel electrode layer.
7. A method for manufacturing a display panel, comprising the steps of:
providing a first substrate layer;
preparing a pixel electrode layer on the first substrate layer, wherein the pixel electrode layer comprises a plurality of sub-pixels distributed in an array, the sub-pixels are divided into a main area and a secondary area, and pixel electrodes of the main area and the secondary area are driven by the same thin film transistor;
preparing a first alignment film on the pixel electrode layer to prepare a first substrate;
providing a second substrate layer;
preparing a black matrix on the second substrate layer, the black matrix being disposed corresponding to a gap between the primary region and the secondary region;
preparing a common electrode on the second substrate layer, wherein the common electrode is positioned between the black matrixes and corresponds to the pixel electrodes of the main area and the secondary area;
preparing a second alignment film on the common electrode;
preparing a shielding electrode on the second alignment film, wherein the shielding electrode is arranged corresponding to the secondary region, a second substrate is prepared, the material of the shielding electrode is prepared by reacting a supermolecular material with trimethylolpropane and a carbon nano tube, or the material of the shielding electrode is prepared by reacting a supermolecular material with trimethylolpropane, a carbon nano tube and graphene, and the supermolecular material is a low molecular weight monomer based on three ureido-4-pyrimidinone functional groups;
and aligning the first substrate and the second substrate, and filling liquid crystal molecules between the first substrate and the second substrate to obtain the display panel.
8. A display device comprising the display panel according to any one of claims 1 to 6.
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| CN106597763A (en) * | 2016-12-02 | 2017-04-26 | 深圳市华星光电技术有限公司 | Electronic device and liquid crystal display panel thereof |
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| CN207264070U (en) * | 2017-09-20 | 2018-04-20 | 北京京东方显示技术有限公司 | A kind of display panel and display device |
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| CN104460142A (en) * | 2014-12-15 | 2015-03-25 | 深圳市华星光电技术有限公司 | Liquid crystal display panel |
| CN109343286A (en) * | 2018-11-21 | 2019-02-15 | 武汉华星光电技术有限公司 | A kind of liquid crystal display panel |
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