CN111430546A - Organic solar cell based on ZnO electron transport layer modification and preparation method thereof - Google Patents
Organic solar cell based on ZnO electron transport layer modification and preparation method thereof Download PDFInfo
- Publication number
- CN111430546A CN111430546A CN202010198504.4A CN202010198504A CN111430546A CN 111430546 A CN111430546 A CN 111430546A CN 202010198504 A CN202010198504 A CN 202010198504A CN 111430546 A CN111430546 A CN 111430546A
- Authority
- CN
- China
- Prior art keywords
- zno
- transport layer
- precursor solution
- electron transport
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses an organic solar cell based on ZnO electronic transmission layer modification and a preparation method thereof, belonging to the field of organic semiconductor thin-film solar cells, and the organic solar cell comprises the following components in sequence from bottom to top: the preparation method of the modified ZnO precursor solution comprises the steps of adding zinc acetate and ethanolamine into ethylene glycol monomethyl ether to dissolve the mixture to obtain a ZnO precursor solution, then doping metal salt and a polymer, fully dissolving and uniformly mixing to obtain the modified ZnO precursor solution. Contact between the ZnO cathode buffer layer and the active layer is optimized, contact resistance between interfaces is reduced, transmission capability of photon-generated carriers is improved, short-circuit current is improved, and performance of the whole organic solar cell is finally improved.
Description
Technical Field
The invention belongs to the field of organic semiconductor thin-film solar cells, and particularly relates to an organic solar cell based on ZnO electron transport layer modification and a preparation method thereof.
Background
The solar energy reaches the ground every second, the energy of the solar energy reaches 80 ten thousand kilowatts, if 0.1 percent of the solar energy on the earth surface is converted into electric energy with the conversion rate of 5 percent, the annual generated energy amount reaches 5.6 × 1012 kilowatts/hour, the solar energy photoelectric utilization is the fastest developing field in recent years and is one of the most spotlighted projects in the effective utilization field of the solar energy.
Organic solar cell generally adopts the inversion structure, and from the bottom up does in proper order: the ITO transparent conductive cathode comprises a substrate, an ITO transparent conductive cathode, an electron transport layer, an active layer, a hole transport layer and a metal anode. In many experiments for researching the photoelectric efficiency of the organic solar cell, the electron transport layer mostly adopts a sol-gel ZnO film. At present, when a spin coating process is adopted to prepare a sol-gel ZnO film as an electron transport layer in a solar cell, a solvent generally adopted is ethylene glycol monomethyl ether (C3H8O2), and the electron transport layer film is formed by thermal annealing. The ZnO electron transport layer prepared by the traditional method has some defects: the sol stability of the ZnO precursor solution is closely related to the solution aging time, and the sol stability in the traditional process is poor; meanwhile, gaps among ZnO particles formed by a traditional process are large, the dispersion is uneven, and surface defects are easily formed, so that the transmission and separation of current carriers are hindered, and the device has high current carrier recombination probability and high interface contact resistance, so that the capability of capturing sunlight and transmitting photon-generated current carriers of the device is greatly reduced, and the performance of the whole device is inhibited.
Disclosure of Invention
The invention aims to: the organic solar cell based on ZnO electron transport layer modification and the preparation method thereof are provided to solve the problems that gaps among ZnO particles formed by the traditional process are large, dispersion is uneven, and surface defects are easy to form.
The technical scheme adopted by the invention is as follows:
the utility model provides an organic solar cell based on ZnO electron transport layer is modified, organic solar cell adopts the inversion structure, follows supreme down and does in proper order: the preparation method of the ZnO electron transport layer comprises the steps of preparing a modified ZnO precursor solution at room temperature, coating the modified ZnO precursor solution on the surface phase of the transparent conductive cathode ITO to form a thin film, and baking the formed thin film to obtain the ZnO electron transport layer, wherein the preparation method of the modified ZnO precursor solution comprises the steps of adding zinc acetate and ethanolamine into ethylene glycol monomethyl ether to dissolve the zinc acetate and the ethanolamine to obtain a ZnO precursor solution, doping metal salt and a polymer, fully dissolving and uniformly mixing to obtain the modified ZnO precursor solution.
In the technical scheme of the application: the ZnO electron transport layer is modified and regulated by doping, polymer and metal salt are doped, oxygen vacancy and defect on the surface of the ZnO film can be effectively reduced by doping metal salt, the preparation method has the advantages that the stability of the device is improved while the interface contact resistance is reduced, the sol stability of the ZnO precursor solution is improved by doping the polymer, the process that the particle size of the colloid increases along with the increase of the aging time is slowed down, the preparation process requirement is simplified, the large-scale commercial production is facilitated, the contact between the ZnO cathode buffer layer and the active layer is optimized, the contact resistance between interfaces is reduced, the transmission capability of a photon-generated carrier is improved, the short-circuit current is improved, the performance of the whole organic solar cell is finally improved, and the problems that gaps among ZnO particles formed by the traditional process are large, the dispersion is uneven and surface defects are easily formed are solved.
Preferably, the thickness of the ZnO electron transport layer is 20-40 nm.
Preferably, the preparation method of the modified ZnO precursor solution comprises the steps of adding 80-120mg of zinc acetate and 26-30mg of ethanolamine into 0.8-1.2ml of ethylene glycol monomethyl ether, dissolving to obtain a ZnO precursor solution, doping 1-3mg of metal salt and 1-3mg of polymer, fully dissolving and uniformly mixing to obtain the modified ZnO precursor solution. The mass of the metal salt and the polymer which are mixed in is not more than 0.3 percent.
More preferably, the preparation method of the modified ZnO precursor solution comprises the steps of adding 100mg of zinc acetate and 28mg of ethanolamine into 1ml of ethylene glycol monomethyl ether to dissolve to obtain a ZnO precursor solution, doping 1-3mg of metal salt and 1-3mg of polymer, fully dissolving and uniformly mixing to obtain the modified ZnO precursor solution.
Preferably, the metal salt is CsF and the polymer is PEIE.
Preferably, the photoactive layer is prepared from a mixed solution including an electron donor material PTB7-Th and an electron acceptor material PC71BM。
More preferably, the mass percentage of the electron donor material PTB7-Th to the electron acceptor material PC71BM in the mixed solution is 1: 1.5, and the thickness of the photoactive layer is 80-120 nm.
Preferably, the material of the hole transport layer is MoO3And the thickness of the hole transport layer is 5-20 nm.
Preferably, the material of the metal anode layer is Ag or Al, and the thickness of the metal anode layer is 100-200 nm.
Preferably, the material of the substrate is glass or a transparent polymer, and the transparent polymer is one or more of polyethylene, polymethyl methacrylate, polycarbonate, polyvinyl chloride, polyimide, vinyl chloride and polyacrylic acid.
A preparation method of an organic solar cell based on ZnO electron transport layer modification comprises the following steps:
(1) cleaning a substrate consisting of a substrate and a transparent conductive cathode ITO, and drying the substrate by using nitrogen after cleaning;
(2) rotationally coating, printing or spraying the modified ZnO precursor solution on the surface of the transparent conductive cathode ITO to form a film, and baking the film to prepare a ZnO electron transport layer;
(3) preparing an optical active layer on the ZnO electron transport layer by spin coating, spray coating, self-assembly, ink-jet printing or screen printing at a temperature of less than 2.5 × 10-4Placing the mixture under vacuum of Pa overnight;
(4) vapor deposition of MoO on photoactive layer3Preparing a hole transport layer;
(5) and evaporating a metal anode on the hole transport layer to obtain the metal anode layer.
Preferably, the baking temperature in the step (2) is 180-220 ℃, and the baking time is 50-70 min.
More preferably, the baking temperature in the step (2) is 200 ℃ and the baking time is 60 min.
Preferably, the preparation method of the modified ZnO precursor solution in step (2) is that 80-120mg of zinc acetate and 26-30mg of ethanolamine are added into 0.8-1.2ml of ethylene glycol monomethyl ether to be dissolved to obtain the ZnO precursor solution, then 1-3mg of metal salt and 1-3mg of polymer are doped, and the modified ZnO precursor solution is obtained after full dissolution and uniform mixing, wherein the metal salt is CsF, and the polymer is PEIE.
More preferably, the preparation method of the modified ZnO precursor solution in step (2) is that 100mg of zinc acetate and 28mg of ethanolamine are added into 1ml of ethylene glycol monomethyl ether to be dissolved to obtain a ZnO precursor solution, then 1-3mg of metal salt and 1-3mg of polymer are doped, and the modified ZnO precursor solution is obtained after sufficient dissolution and uniform mixing, wherein the metal salt is CsF and the polymer is PEIE.
In the technical scheme of the application, the PEIE is polyethylene ethyene acetylated.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. in the invention, by doping the polymer PEIE, the sol stability of the ZnO precursor solution is improved, the process that the particle size of the colloid increases along with the increase of the aging time is slowed down, the preparation process requirement is simplified, and the large-scale commercial production is facilitated;
2. by doping the metal salt CsF, oxygen vacancies and defects on the surface of the ZnO film are effectively filled, and the stability of the device is improved;
3. contact between the ZnO cathode buffer layer and the active layer is optimized, contact resistance between interfaces is reduced, transmission capability of photon-generated carriers is improved, short-circuit current is improved, and performance of the whole organic solar cell is finally improved.
Drawings
Fig. 1 is a schematic structural diagram of an organic solar cell based on ZnO electron transport layer modification according to the present invention.
The labels in the figure are: 1-substrate, 2-transparent conductive cathode ITO, 3-ZnO electron transport layer, 4-photoactive layer, 5-hole transport layer, 6-metal anode layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
As shown in fig. 1, an organic solar cell based on ZnO electronic transmission layer modification is characterized in that the organic solar cell adopts an inversion structure, and sequentially comprises from bottom to top: the preparation method of the ZnO electron transport layer comprises the steps of preparing a modified ZnO precursor solution at room temperature, coating the modified ZnO precursor solution on the surface phase of the transparent conductive cathode ITO to form a thin film, and baking the formed thin film to obtain the ZnO electron transport layer, wherein the preparation method of the modified ZnO precursor solution comprises the steps of adding zinc acetate and ethanolamine into ethylene glycol monomethyl ether to dissolve the zinc acetate and the ethanolamine to obtain a ZnO precursor solution, doping metal salt and a polymer, fully dissolving and uniformly mixing to obtain the modified ZnO precursor solution.
In the technical scheme of the application: the ZnO electron transport layer is modified and regulated by doping, polymer and metal salt are doped, oxygen vacancy and defect on the surface of the ZnO film can be effectively reduced by doping metal salt, the preparation method has the advantages that the stability of the device is improved while the interface contact resistance is reduced, the sol stability of the ZnO precursor solution is improved by doping the polymer, the process that the particle size of the colloid increases along with the increase of the aging time is slowed down, the preparation process requirement is simplified, the large-scale commercial production is facilitated, the contact between the ZnO cathode buffer layer and the active layer is optimized, the contact resistance between interfaces is reduced, the transmission capability of a photon-generated carrier is improved, the short-circuit current is improved, the performance of the whole organic solar cell is finally improved, and the problems that gaps among ZnO particles formed by the traditional process are large, the dispersion is uneven and surface defects are easily formed are solved.
Example 2
As shown in FIG. 1, on the basis of example 1, the thickness of the ZnO electron transport layer is 20-40 nm.
Example 3
As shown in FIG. 1, based on example 1, the preparation method of the modified ZnO precursor solution comprises the steps of adding 80-120mg of zinc acetate and 26-30mg of ethanolamine into 0.8-1.2ml of ethylene glycol monomethyl ether, dissolving to obtain a ZnO precursor solution, doping 1-3mg of metal salt and 1-3mg of polymer, fully dissolving and uniformly mixing to obtain the modified ZnO precursor solution. The mass of the metal salt and the polymer which are mixed in is not more than 0.3 percent.
Example 4
As shown in fig. 1, based on example 3, the preparation method of the modified ZnO precursor solution includes adding 100mg of zinc acetate and 28mg of ethanolamine into 1ml of ethylene glycol monomethyl ether to dissolve, and then doping 1-3mg of metal salt and 1-3mg of polymer, and fully dissolving and uniformly mixing to obtain the modified ZnO precursor solution.
Example 5
As shown in fig. 1, on the basis of example 3 or 4, the metal salt is CsF and the polymer is PEIE.
Example 6
As shown in FIG. 1, on the basis of example 1, the photoactive layer was prepared from a mixed solution including an electron donor material PTB7-Th and an electron acceptor material PC71BM。
Example 7
As shown in FIG. 1, on the basis of example 6, the mass percentage of the electron donor material PTB7-Th to the electron acceptor material PC71BM in the mixed solution is 1: 1.5, the concentration is 10mg/ml, and the thickness of the photoactive layer is 80-120 nm.
Example 8
As shown in FIG. 1, on the basis of example 1, the material of the hole transport layer is MoO3And the thickness of the hole transport layer is 5-20 nm.
Example 9
As shown in fig. 1, based on example 1, the material of the metal anode layer is Ag or Al, and the thickness of the metal anode layer is 100-200 nm.
Example 10
As shown in fig. 1, on the basis of example 1, the material of the substrate is glass or a transparent polymer, and the transparent polymer is one or more of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, vinyl chloride-vinyl acetate resin and polyacrylic acid.
Example 11
As shown in fig. 1, a method for preparing an organic solar cell based on ZnO electron transport layer modification includes the following steps:
(1) cleaning a substrate consisting of a substrate and a transparent conductive cathode ITO, and drying the substrate by using nitrogen after cleaning, wherein the roughness of the substrate is less than 1 nm;
(2) rotationally coating, printing or spraying the modified ZnO precursor solution on the surface of a transparent conductive cathode ITO to form a film, baking the film at the baking temperature of 180 ℃ for 70min to prepare a ZnO electron transport layer, wherein the preparation method of the modified ZnO precursor solution comprises the steps of adding 80mg of zinc acetate and 26mg of ethanolamine into 0.8ml of ethylene glycol monomethyl ether to dissolve the mixture to obtain a ZnO precursor solution, doping 1mg of metal salt and 1mg of polymer, fully dissolving and uniformly mixing to obtain the modified ZnO precursor solution, wherein the metal salt is CsF, the polymer is PEIE, and the thickness of the ZnO electron transport layer is 20 nm;
(3) preparing an optical active layer on the ZnO electron transport layer by spin coating, spray coating, self-assembly, ink-jet printing or screen printing at a temperature of less than 2.5 × 10-4Placing the mixture in vacuum of Pa overnight, wherein the thickness of the photoactive layer is 80 nm;
(4) vapor deposition of MoO on photoactive layer3Preparing a hole transport layer, wherein the thickness of the hole transport layer is 5 nm;
(5) and evaporating a metal anode on the hole transport layer to obtain a metal anode layer, wherein the thickness of the metal anode layer is 100 nm.
Under standard test conditions: AM1.5, 100mW/cm2Measuring the open circuit voltage (V) of the deviceOC) 0.79V, short-circuit current (J)SC)＝15.32mA/cm2The Fill Factor (FF) is 0.67, and the Photoelectric Conversion Efficiency (PCE) is 8.09%.
Example 12
As shown in fig. 1, based on example 11, a method for preparing a ZnO-based electron transport layer modified organic solar cell includes the following steps:
(1) cleaning a substrate consisting of a substrate and a transparent conductive cathode ITO, and drying the substrate by using nitrogen after cleaning, wherein the roughness of the substrate is less than 1 nm;
(2) rotationally coating, printing or spraying the modified ZnO precursor solution on the surface of a transparent conductive cathode ITO to form a film, baking the film at the baking temperature of 200 ℃ for 60min to prepare a ZnO electron transport layer, wherein the preparation method of the modified ZnO precursor solution comprises the steps of adding 100mg of zinc acetate and 28mg of ethanolamine into 1ml of ethylene glycol monomethyl ether to dissolve the mixture to obtain a ZnO precursor solution, doping 2mg of metal salt and 2mg of polymer, fully dissolving and uniformly mixing to obtain the modified ZnO precursor solution, wherein the metal salt is CsF, the polymer is PEIE, and the thickness of the ZnO electron transport layer is 30 nm;
(3) preparing an optical active layer on the ZnO electron transport layer by spin coating, spray coating, self-assembly, ink-jet printing or screen printing at a temperature of less than 2.5 × 10-4Pa is placed under vacuum overnight, and the thickness of the optical active layer is 100 nm;
(4) vapor deposition of MoO on photoactive layer3Preparing a hole transport layer, wherein the thickness of the hole transport layer is 12 nm;
(5) and evaporating a metal anode on the hole transport layer to obtain a metal anode layer, wherein the thickness of the metal anode layer is 150 nm.
Under standard test conditions: AM1.5, 100mW/cm2Measuring the open circuit voltage (V) of the deviceOC) 0.78V, short-circuit current (J)SC)＝17.33mA/cm2The Fill Factor (FF) is 0.69, and the Photoelectric Conversion Efficiency (PCE) is 9.23%.
Example 13
As shown in fig. 1, based on example 11, a method for preparing a ZnO-based electron transport layer modified organic solar cell includes the following steps:
(1) cleaning a substrate consisting of a substrate and a transparent conductive cathode ITO, and drying the substrate by using nitrogen after cleaning, wherein the roughness of the substrate is less than 1 nm;
(2) rotationally coating, printing or spraying the modified ZnO precursor solution on the surface of the transparent conductive cathode ITO to form a film, baking the film at the baking temperature of 220 ℃ for 50min to prepare the ZnO electron transport layer, wherein the preparation method of the modified ZnO precursor solution comprises the steps of adding 120mg of zinc acetate and 30mg of ethanolamine into 1.2ml of ethylene glycol monomethyl ether to dissolve the ethylene glycol monomethyl ether to obtain a ZnO precursor solution, doping 3mg of metal salt and 3mg of polymer, fully dissolving and uniformly mixing to obtain the modified ZnO precursor solution, wherein the metal salt is CsF, the polymer is PEIE, and the thickness of the ZnO electron transport layer is 40 nm;
(3) preparing an optical active layer on the ZnO electron transport layer by spin coating, spray coating, self-assembly, ink-jet printing or screen printing at a temperature of less than 2.5 × 10-4Pa is placed under vacuum overnight, and the thickness of the photoactive layer is 120 nm;
(4) vapor deposition of MoO on photoactive layer3Preparing a hole transport layer, wherein the thickness of the hole transport layer is 20 nm;
(5) and evaporating a metal anode on the hole transport layer to obtain a metal anode layer, wherein the thickness of the metal anode layer is 200 nm.
Under standard test conditions: AM1.5, 100mW/cm2Measuring the open circuit voltage (V) of the deviceOC) 0.78V, short-circuit current (J)SC)＝16.11mA/cm2The Fill Factor (FF) is 0.71, and the Photoelectric Conversion Efficiency (PCE) is 8.88%.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The utility model provides an organic solar cell based on ZnO electron transport layer is modified which characterized in that, organic solar cell adopts the inversion structure, follows supreme down and does in proper order: the preparation method of the ZnO electron transport layer comprises the steps of preparing a modified ZnO precursor solution at room temperature, coating the modified ZnO precursor solution on the surface phase of the transparent conductive cathode ITO to form a thin film, and baking the formed thin film to obtain the ZnO electron transport layer, wherein the preparation method of the modified ZnO precursor solution comprises the steps of adding zinc acetate and ethanolamine into ethylene glycol monomethyl ether to dissolve the zinc acetate and the ethanolamine to obtain a ZnO precursor solution, doping metal salt and a polymer, fully dissolving and uniformly mixing to obtain the modified ZnO precursor solution.
2. The ZnO electron transport layer modified organic solar cell of claim 1, wherein the ZnO electron transport layer has a thickness of 20-40 nm.
3. The ZnO electron transport layer modification-based organic solar cell of claim 1, wherein the preparation method of the modified ZnO precursor solution comprises the steps of adding 80-120mg of zinc acetate and 26-30mg of ethanolamine into 0.8-1.2ml of ethylene glycol monomethyl ether, dissolving to obtain a ZnO precursor solution, doping 1-3mg of metal salt and 1-3mg of polymer, fully dissolving and uniformly mixing to obtain the modified ZnO precursor solution.
4. The ZnO electron transport layer modification-based organic solar cell of claim 3, wherein the preparation method of the modified ZnO precursor solution comprises the steps of adding 100mg of zinc acetate and 28mg of ethanolamine into 1ml of ethylene glycol monomethyl ether, dissolving to obtain a ZnO precursor solution, doping 1-3mg of metal salt and 1-3mg of polymer, fully dissolving and uniformly mixing to obtain the modified ZnO precursor solution.
5. The ZnO electron transport layer modified organic solar cell of claim 3 or 4, wherein the metal salt is CsF and the polymer is PEIE.
6. The ZnO electron transport layer modified organic solar cell of claim 1, wherein the photoactive layer is prepared from a mixed solution, and the mixed solution comprises an electron donor material PTB7-Th and an electron donor materialReceptor material PC71BM, the mass percentage of the electron donor material PTB7-Th to the electron acceptor material PC71BM in the mixed solution is 1: 1.5, and the thickness of the photoactive layer is 80-120 nm.
7. The ZnO-based electron transport layer modified organic solar cell of claim 1, wherein the ZnO-based electron transport layer is a ZnO-based electron transport layer,
the hole transport layer is made of MoO3And the thickness of the hole transport layer is 5-20 nm.
8. The organic solar cell as claimed in claim 1, wherein the material of the metal anode layer is Ag or Al, and the thickness of the metal anode layer is 100-200 nm.
9. A method for preparing the organic solar cell based on the modification of the ZnO electron transport layer according to any of claims 1 to 8, comprising the following steps:
(1) cleaning a substrate consisting of a substrate and a transparent conductive cathode ITO, and drying the substrate by using nitrogen after cleaning;
(2) rotationally coating, printing or spraying the modified ZnO precursor solution on the surface of the transparent conductive cathode ITO to form a film, and baking the film to prepare a ZnO electron transport layer;
(3) preparing an optical active layer on the ZnO electron transport layer by spin coating, spray coating, self-assembly, ink-jet printing or screen printing at a temperature of less than 2.5 × 10-4Placing the mixture under vacuum of Pa overnight;
(4) vapor deposition of MoO on photoactive layer3Preparing a hole transport layer;
(5) and evaporating a metal anode on the hole transport layer to obtain the metal anode layer.
10. The method as claimed in claim 9, wherein the baking temperature in step (2) is 180-220 ℃ and the baking time is 50-70 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010198504.4A CN111430546A (en) | 2020-03-19 | 2020-03-19 | Organic solar cell based on ZnO electron transport layer modification and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010198504.4A CN111430546A (en) | 2020-03-19 | 2020-03-19 | Organic solar cell based on ZnO electron transport layer modification and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111430546A true CN111430546A (en) | 2020-07-17 |
Family
ID=71548155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010198504.4A Pending CN111430546A (en) | 2020-03-19 | 2020-03-19 | Organic solar cell based on ZnO electron transport layer modification and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111430546A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811663A (en) * | 2014-02-27 | 2014-05-21 | 西南大学 | Annealed free organic solar cell and production method thereof |
| CN103855307A (en) * | 2014-03-14 | 2014-06-11 | 国家纳米科学中心 | Perovskite solar battery and preparing method thereof |
| CN104867678A (en) * | 2015-04-17 | 2015-08-26 | 新余学院 | Conductive polymer/zinc oxide composite counter electrode and preparation method thereof |
| CN105244451A (en) * | 2015-10-16 | 2016-01-13 | Tcl集团股份有限公司 | Quantum dot light-emitting diode with mixed HTL and preparation method of quantum dot light-emitting diode |
| CN109004090A (en) * | 2018-08-07 | 2018-12-14 | 吉林大学 | A method of widening organic solar batteries polyelectrolyte class decorative layer process window |
| US20180366686A1 (en) * | 2017-04-05 | 2018-12-20 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Treatment method of emitting layer raw material in oled and application |
| CN110518123A (en) * | 2019-07-26 | 2019-11-29 | 西安电子科技大学 | Using composite material as the perovskite solar battery and preparation method of electron transfer layer |
-
2020
- 2020-03-19 CN CN202010198504.4A patent/CN111430546A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811663A (en) * | 2014-02-27 | 2014-05-21 | 西南大学 | Annealed free organic solar cell and production method thereof |
| CN103855307A (en) * | 2014-03-14 | 2014-06-11 | 国家纳米科学中心 | Perovskite solar battery and preparing method thereof |
| CN104867678A (en) * | 2015-04-17 | 2015-08-26 | 新余学院 | Conductive polymer/zinc oxide composite counter electrode and preparation method thereof |
| CN105244451A (en) * | 2015-10-16 | 2016-01-13 | Tcl集团股份有限公司 | Quantum dot light-emitting diode with mixed HTL and preparation method of quantum dot light-emitting diode |
| US20180366686A1 (en) * | 2017-04-05 | 2018-12-20 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Treatment method of emitting layer raw material in oled and application |
| CN109004090A (en) * | 2018-08-07 | 2018-12-14 | 吉林大学 | A method of widening organic solar batteries polyelectrolyte class decorative layer process window |
| CN110518123A (en) * | 2019-07-26 | 2019-11-29 | 西安电子科技大学 | Using composite material as the perovskite solar battery and preparation method of electron transfer layer |
Non-Patent Citations (2)
| Title |
|---|
| HUANGZHONG YU等: ""PEIE doped ZnO as a tunable cathode interlayer for efficient polymer solar cells"", 《APPLIED SURFACE SCIENCE》 * |
| JING QIU等: ""Insights into Working Mechanism of Alkali Metal Fluorides as Dopants of ZnO Films in Inverted Polymer Solar Cells"", 《J. PHYS. CHEM. C》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104134711B (en) | A kind of preparation method of perovskite solar cell | |
| CN111223990A (en) | Inverted perovskite solar cell containing alkali metal halide hole modification layer and preparation method | |
| CN103811663A (en) | Annealed free organic solar cell and production method thereof | |
| CN106601916B (en) | Organic solar batteries and preparation method thereof based on hetero-junctions cathode buffer layer | |
| CN104103759A (en) | Fibrous solar battery based on perovskite type organic lead and iodine compound and preparation method thereof | |
| CN105470399A (en) | Perovskite solar cell based on undoped organic hole transport layer and preparation method | |
| CN104993060A (en) | No-annealing perovskite type solar cell and preparing method thereof | |
| CN105470398A (en) | Ternary-composite cathode buffer layer-based organic thin film solar cell and preparation method thereof | |
| CN112786790A (en) | Perovskite solar cell, interface modification layer thereof and preparation method of modification layer | |
| CN220023501U (en) | Crystalline silicon/perovskite laminated solar cell | |
| CN108023018A (en) | The preparation method of inversion perovskite solar cell based on the continuously adjustable control of band gap | |
| CN116782675A (en) | Perovskite solar cell and preparation method thereof | |
| CN107565028B (en) | Thick-film organic solar cell based on low-temperature preparation of thermal crystallization active layer and preparation method thereof | |
| CN111430546A (en) | Organic solar cell based on ZnO electron transport layer modification and preparation method thereof | |
| CN113328040B (en) | Preparation method of organic solar cell with ZnO doped Fe2O3 as cathode interface layer material | |
| CN111490164B (en) | Perovskite photoelectric detector based on DNT-PH composite hole transport layer and preparation method thereof | |
| CN113066930B (en) | Method for rapidly oxidizing spiro-OMeTAD and solar cell | |
| CN102655217A (en) | Inorganic-organic heterojunction all solid solar battery | |
| CN114242824A (en) | All-inorganic perovskite solar cell and preparation method thereof | |
| CN108198939B (en) | Organic solar cell with multi-layer magnesium-aluminum-doped zinc oxide composite film as electron transport layer | |
| CN110993802A (en) | Polymer solar cell based on surface modified cathode buffer layer | |
| CN111430547A (en) | Organic solar cell based on astaxanthin cathode buffer layer and preparation method thereof | |
| CN110459683A (en) | Organic solar batteries and preparation method based on the low attenuation characteristic of different ZnO nano particles | |
| CN103794727A (en) | Organic solar cell based on AZO/Ca cathode and manufacturing method thereof | |
| CN214848680U (en) | Perovskite solar cell and perovskite solar module thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200717 |
|
| RJ01 | Rejection of invention patent application after publication |