CN111430539A - Long-life electronic skin and preparation method thereof - Google Patents
Long-life electronic skin and preparation method thereof Download PDFInfo
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- CN111430539A CN111430539A CN202010181636.6A CN202010181636A CN111430539A CN 111430539 A CN111430539 A CN 111430539A CN 202010181636 A CN202010181636 A CN 202010181636A CN 111430539 A CN111430539 A CN 111430539A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 30
- JEBFVOLFMLUKLF-IFPLVEIFSA-N Astaxanthin Natural products CC(=C/C=C/C(=C/C=C/C1=C(C)C(=O)C(O)CC1(C)C)/C)C=CC=C(/C)C=CC=C(/C)C=CC2=C(C)C(=O)C(O)CC2(C)C JEBFVOLFMLUKLF-IFPLVEIFSA-N 0.000 claims abstract description 20
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- 229910052802 copper Inorganic materials 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
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- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 6
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- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 6
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- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000004793 Polystyrene Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
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- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000011888 foil Substances 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
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- 239000011248 coating agent Substances 0.000 claims description 2
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- 229930003935 flavonoid Natural products 0.000 description 1
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- 238000011031 large-scale manufacturing process Methods 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61F—FILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
- A61F2/00—Filters implantable into blood vessels; Prostheses, i.e. artificial substitutes or replacements for parts of the body; Appliances for connecting them with the body; Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents
- A61F2/02—Prostheses implantable into the body
- A61F2/10—Hair or skin implants
- A61F2/105—Skin implants, e.g. artificial skin
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
Landscapes
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Transplantation (AREA)
- Vascular Medicine (AREA)
- Animal Behavior & Ethology (AREA)
- Cardiology (AREA)
- Biomedical Technology (AREA)
- Heart & Thoracic Surgery (AREA)
- Dermatology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oral & Maxillofacial Surgery (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
- Veterinary Medicine (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a long-life electronic skin and a preparation method thereof, and relates to the technical field of electronic components, wherein the long-life electronic skin comprises a substrate 1, a gate electrode 2, a gate insulating layer 3 and an organic semiconductor 4 which are sequentially arranged from bottom to top, wherein the organic semiconductor 4 is provided with a source electrode 5 and a drain electrode 6, and astaxanthin with the mass percentage of 1% -3%, shellac with the mass percentage of 5% -7% and reduced graphene oxide with the mass percentage of 0.2% -0.5% are introduced into the organic semiconductor layer 4; the invention ensures the carrier mobility of the device, prepares a high-performance transistor device and realizes the electronic skin with higher sensitivity.
Description
Technical Field
The invention relates to the technical field of electronic components, in particular to a long-life electronic skin and a preparation method thereof.
Background
Under modern science and technology background, along with the continuous improvement of people's standard of living, can the basic information (temperature, pressure etc.) of human skin of perception, the electron skin that simultaneously can show the data of gathering through external device receives people's more and more attention.
Most of the existing electronic skins are manufactured to be ultrathin, and the electronic components are attached to the surfaces of the skins, so that some problems are inevitably faced, such as corrosion of sweat and grease secreted by a human body to the electronic skins, and corrosion of water and oxygen in air to the electronic skins, although some problems can be solved through secondary packaging, the secondary packaging undoubtedly increases the manufacturing cost, and meanwhile, challenges are provided for miniaturization and intellectualization of devices.
Disclosure of Invention
The invention aims to: the invention provides a long-life electronic skin and a preparation method thereof, aiming at solving the technical problems of poor service life of devices, low sensitivity and complex external equipment in the existing electronic skin technology.
The invention specifically adopts the following technical scheme for realizing the purpose:
the long-life electronic skin comprises a substrate, a gate electrode, a gate insulating layer and an organic semiconductor which are sequentially arranged from bottom to top, wherein a source electrode and a drain electrode are arranged on the organic semiconductor, and astaxanthin, shellac and reduced graphene oxide are introduced into the organic semiconductor layer according to the mass percentage of 1-3%, 5-7% and 0.2-0.5%.
Furthermore, the substrate can be a rigid substrate or a flexible substrate, such as one of a silicon wafer, glass, a polymer film and a metal foil, and has certain water vapor and oxygen permeation resistance and better surface flatness.
Further, the thickness of the source electrode and the drain electrode is 10-100 nm, the gate electrode, the source electrode and the drain electrode are made of materials with low resistance, the materials with low resistance are low-resistance metal materials or metal oxides or conductive composite materials, and the metal materials are one or more of gold (Au), silver (Ag), magnesium (Mg), aluminum (Al), copper (Cu), calcium (Ca), barium (Ba) and nickel (Ni); the metal oxide is Indium Tin Oxide (ITO) or zinc tin oxide (IZO) conductive film; the conductive composite material is one of gold glue, silver glue and carbon glue.
Furthermore, the thickness of the grid electrode insulating layer is 20-520 nm, and the grid electrode insulating layer is made of inorganic insulating materials and organic insulating materials with good dielectric properties.
Furthermore, the inorganic insulating material is one or more of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (A12O3), lithium fluoride (L iF), titanium dioxide (TiO2), hafnium dioxide (HfO2) and pentaoxide (Ta2O5), and the organic insulating material is one or more of polyvinyl alcohol (PVA), polyvinyl chloride (PVC), polyvinyl pyrrolidone (PVP), Polystyrene (PS), polymethyl methacrylate (PMMA), Polyethylacrylate (PCA), Polytetrafluoroethylene (PTFE), Polyimide (PI) or Polyethylene (PE).
Furthermore, the thickness of the organic semiconductor detection layer (4) is 25-400 nm, and the organic semiconductor detection layer (4) is made of one or more soluble organic semiconductor materials of poly-3-hexylthiophene (P3HT) and Tips-Pentacene (Tips-Pentacene).
A preparation method of long-life electronic skin is characterized by comprising the following steps:
and 6, preparing a source electrode and a drain electrode in the organic semiconductor layer.
Further, the preparation method of the gate electrode source electrode and the gate electrode drain electrode is one of vacuum thermal evaporation, magnetron sputtering, plasma enhanced chemical vapor deposition, screen printing, printing and spin coating.
Further, the gate insulating layer is prepared by one of plasma enhanced chemical vapor deposition, thermal oxidation, spin coating or vacuum evaporation.
Further, the organic semiconductor layer preparation method is one of plasma enhanced chemical vapor deposition, thermal oxidation, spin coating, vacuum evaporation, film dropping, imprinting, printing or air-jetting.
The invention has the following beneficial effects:
1. the organic semiconductor layer is simple in structure, and 1-3% of astaxanthin, 5-7% of shellac and 0.2-0.5% of reduced graphene oxide are added in percentage by mass. The extremely strong oxidation resistance and the hydrophobicity of the astaxanthin are utilized, the astaxanthin is prevented from being corroded by water and oxygen, the service life of the electronic skin is effectively prolonged, meanwhile, the appearance of an organic semiconductor layer film can be improved by accurately controlling the proportion of the organic semiconductor, the astaxanthin, the shellac and the reduced graphene oxide, the defect state density increase caused by the introduction of the astaxanthin is improved, the carrier mobility of a device is ensured, a high-performance transistor device is prepared, and the electronic skin with higher sensitivity is realized. The invention solves the problems of poor service life of devices, low sensitivity and complicated external equipment in the existing electronic skin technology.
2. Compared with the existing transistor type skin sensor after packaging, due to the introduction of astaxanthin and shellac, the device is free from secondary packaging, the thickness of the transistor device is effectively reduced, and the miniaturization and intellectualization of the sensor are realized.
3. After a certain amount of reduced graphene oxide is introduced into the organic semiconductor layer, negative effects brought by astaxanthin are effectively improved, so that the device is more sensitive to changes of pressure and temperature, can work in a low-voltage range, reduces the requirements of the device on external equipment, and is favorable for realizing the miniaturization of the whole set of equipment.
4. The astaxanthin and the shellac are wide in source, environment-friendly, friendly to sensitive skin, low in cost, simple in preparation process and easy for industrial large-scale production.
Drawings
FIG. 1 is a schematic diagram of a high stability skin sensor according to the present invention;
reference numerals: 1-substrate, 2-gate electrode, 3-gate insulating layer, 4-organic semiconductor layer, 5-source electrode, 6-drain electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present invention, it should be noted that the terms "inside", "outside", "upper", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships conventionally arranged when products of the present invention are used, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements indicated must have specific orientations, be constructed in specific orientations, and operated, and thus, cannot be construed as limiting the present invention.
As shown in fig. 1, the present embodiment provides a long-life electronic skin, which includes a substrate 1, a gate electrode 2, a gate insulating layer 3, and an organic semiconductor 4, which are sequentially disposed from bottom to top, wherein a source electrode 5 and a drain electrode 6 are disposed on the organic semiconductor 4, and astaxanthin, 5% -7% of shellac, and 0.2% -0.5% of reduced graphene oxide are introduced into the organic semiconductor layer 4 by mass percentage.
The substrate 1 can be a rigid substrate or a flexible substrate, such as one of a silicon wafer, glass, a polymer film and a metal foil, and has certain water vapor and oxygen permeation resistance and better surface flatness.
The thickness of the source electrode and the drain electrode is 10-100 nm, the gate electrode 2, the source electrode 5 and the drain electrode 6 are made of materials with low resistance, the materials with low resistance are low-resistance metal materials or metal oxides or conductive composite materials, and the metal materials are one or more of gold (Au), silver (Ag), magnesium (Mg), aluminum (Al), copper (Cu), calcium (Ca), barium (Ba) and nickel (Ni); the metal oxide is Indium Tin Oxide (ITO) or zinc tin oxide (IZO) conductive film; the conductive composite material is one of gold glue, silver glue and carbon glue.
The thickness of the gate insulating layer 3 is 20-520 nm, and the gate insulating layer 3 is made of an inorganic insulating material and an organic insulating material with good dielectric properties.
The inorganic insulating material is one or more of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (A12O3), lithium fluoride (L iF), titanium dioxide (TiO2), hafnium dioxide (HfO2) and dipentane pentoxide (Ta2O5), and the organic insulating material is one or more of polyvinyl alcohol (PVA), polyvinyl chloride (PVC), polyvinylpyrrolidone (PVP), Polystyrene (PS), polymethyl methacrylate (PMMA), Polyethylacrylate (PCA), Polytetrafluoroethylene (PTFE), Polyimide (PI) or Polyethylene (PE).
The thickness of the organic semiconductor detection layer 4 is 25-400 nm, and the organic semiconductor detection layer 4 is made of one or more soluble organic semiconductor materials of poly 3-hexylthiophene P3HT and Tips-Pentacene.
Example 1
A preparation method of long-life electronic skin comprises the following steps:
and 4, spin-coating 93.8% by mass on the gate insulating layer: 1%: 5%: 0.2% of P3HT, astaxanthin, shellac and reduced graphene oxide mixed organic semiconductor layer of 100 nm;
and 5, preparing the copper source electrode and the copper drain electrode by vacuum evaporation to be 100 nm.
The pressure, temperature response characteristic and the life of the device are tested, the detection effect is good, and the service life is long.
Example 2
A preparation method of long-life electronic skin comprises the following steps:
and 4, spin-coating 93.5% by mass on the gate insulating layer: 1%: 5%: 0.5% of Tips-pentacene, astaxanthin, shellac and reduced graphene oxide mixed with an organic semiconductor layer of 150 nm;
and 5, preparing the silver source electrode and the drain electrode by vacuum evaporation to be 10 nm.
The pressure, temperature response characteristic and service life of the device are tested, the detection effect is good, and the service life is long.
Example 3
A preparation method of long-life electronic skin comprises the following steps:
and 5, preparing the gold source electrode and the gold drain electrode by vacuum evaporation to 40 nm.
The pressure, temperature response characteristic and the service life of the device are tested, the detection effect is good, and the service life is longest.
Example 4
A preparation method of long-life electronic skin comprises the following steps:
and step 3, spin-coating 89.5% by mass on the gate insulating layer: 3%: 7%: 0.5% of P3HT, astaxanthin, shellac and reduced graphene oxide mixed organic semiconductor layer of 25 nm;
and 4, preparing the gold source electrode and the gold drain electrode by vacuum evaporation to 60 nm.
The pressure, temperature response characteristic and service life of the device are tested, the detection effect is poor, and the service life is long.
Example 5
A preparation method of long-life electronic skin comprises the following steps:
and 5, preparing the silver source electrode and the drain electrode by vacuum evaporation at 70 nm.
The pressure, temperature response characteristic and service life of the device are tested, the detection effect is best, and the service life is long.
Example 6
A preparation method of long-life electronic skin comprises the following steps:
and 4, preparing the copper source electrode and the copper drain electrode by vacuum evaporation at 80 nm.
The pressure and temperature response characteristics and the service life of the device are tested, the detection effect is good, and the service life is long.
Table 1: and adding flavonoid compounds, shellac and reduced graphene oxide in different proportions into the device performance parameter table.
Claims (10)
1. The long-life electronic skin is characterized by comprising a substrate (1), a gate electrode (2), a gate insulating layer (3) and an organic semiconductor (4) which are sequentially arranged from bottom to top, wherein a source electrode (5) and a drain electrode (6) are arranged on the organic semiconductor (4), and astaxanthin, shellac and reduced graphene oxide are introduced into the organic semiconductor layer (4) in mass percentages of 1% -3%, 5% -7% and 0.2% -0.5%.
2. The long-life electronic skin according to claim 1, characterized in that said substrate (1) is a rigid substrate or a flexible substrate, such as one of silicon wafer, glass, polymer film and metal foil, having a certain resistance to the penetration of water vapor and oxygen, and having a good surface flatness.
3. The long-life electronic skin according to claim 1, wherein the source electrode and the drain electrode have a thickness of 10 to 100nm, and the gate electrode (2), the source electrode (5) and the drain electrode (6) are made of a material having low resistance, the material having low resistance is a metal material having low resistance, the metal material is one or more of gold (Au), silver (Ag), magnesium (Mg), aluminum (Al), copper (Cu), calcium (Ca), barium (Ba) and nickel (Ni); the metal oxide is Indium Tin Oxide (ITO) or zinc tin oxide (IZO) conductive film; the conductive composite material is one of gold glue, silver glue and carbon glue.
4. The long-life electronic skin as claimed in claim 1, wherein the thickness of the gate insulating layer (3) is 20-520 nm, and the gate insulating layer (3) is made of an inorganic insulating material and an organic insulating material having good dielectric properties.
5. The long-life electronic skin of claim 5, wherein the inorganic insulating material is one or more of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (A12O3), lithium fluoride (L iF), titanium dioxide (TiO2), hafnium dioxide (HfO2), and pentaoxide (Ta2O5), and the organic insulating material is one or more of polyvinyl alcohol (PVA), polyvinyl chloride (PVC), polyvinyl pyrrolidone (PVP), Polystyrene (PS), polymethyl methacrylate (PMMA), Polyethylacrylate (PCA), Polytetrafluoroethylene (PTFE), Polyimide (PI), and Polyethylene (PE).
6. The long-life electronic skin according to claim 1, wherein the thickness of the organic semiconductor detection layer (4) is 25-400 nm, and the organic semiconductor detection layer (4) is made of one or more soluble organic semiconductor materials of poly-3-hexylthiophene (P3HT) and Tips-Pentacene (Tips-Pentacene).
7. The method for preparing a long life electronic skin as claimed in any one of claims 1 to 6, comprising the steps of:
step 1, thoroughly cleaning a glass substrate (1) with a prepared gate electrode (2), and drying the glass substrate with dry nitrogen after cleaning;
step 2, preparing a gate insulating layer (3) on the gate electrode (2);
step 3, heating and baking the gate insulating layer (3);
step 5, preparing a machine semiconductor layer (4) on the grid electrode insulating layer (3), wherein the machine semiconductor layer (4) is a mixed coating which comprises 1-3% of astaxanthin, 5-7% of shellac and 0.2-0.5% of reduced graphene oxide in percentage by mass;
and 6, preparing a source electrode (5) and a drain electrode (6) on the organic semiconductor layer (4).
8. The method for preparing long-life electronic skin according to claim 7, wherein the gate electrode (2) source electrode (5) and drain electrode (6) is prepared by one of vacuum thermal evaporation, magnetron sputtering, plasma enhanced chemical vapor deposition, screen printing, printing and spin coating.
9. The method for preparing long-life electronic skin according to claim 7, wherein the gate insulating layer (3) is prepared by one of plasma enhanced chemical vapor deposition, thermal oxidation, spin coating or vacuum evaporation.
10. The method for preparing long-life electronic skin according to claim 7, wherein the organic semiconductor layer (4) is prepared by one of plasma enhanced chemical vapor deposition, thermal oxidation, spin coating, vacuum evaporation, dropping film, stamping, printing or air-jet.
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