CN111426398A - Multicolor large-area-array infrared detector and preparation method thereof - Google Patents
Multicolor large-area-array infrared detector and preparation method thereof Download PDFInfo
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
Abstract
The application discloses a multicolor large-area array infrared detector and a preparation method thereof, and relates to the field of semiconductor photoelectronics. The detector comprises a detector shell, an optical window, a rotating shaft, a transmission shaft, a roller, a plurality of groups of focal plane chip packaging Dewar devices, a refrigerating device, a fixed shaft, an electric brush, a lens, a signal processing circuit and a display. The utility model provides a focus plane chip encapsulation of different detection wave bands is in different dewars, then arranges the focus plane chip encapsulation dewar device according to certain axial symmetry mode and welds on the axial plane of cylinder, realizes the detection of different wave bands through the rotation of cylinder, finally realizes polychrome infrared detection image imaging. The multi-color packaging method can realize multi-color by embedding and parallel connection of the single-color focal plane chip packaging Dewar device arrays, save process time and realize low cost. In addition, this application polychrome large-area array infrared focal plane detector can also realize different wave band wavelength couplings and signal output according to practical field.
Description
Technical Field
The application relates to the field of semiconductor photoelectron, in particular to a multicolor large-area array infrared detector and a preparation method thereof.
Background
The infrared detector is used as a core component in an infrared imaging system, can realize the conversion between an infrared light signal and an electric signal, and simultaneously performs corresponding analog and digital processing on a received physical electric signal to achieve an imaging image which can be distinguished by human vision. Up to now, the application of infrared detection technology is mainly focused on military fields, such as early warning, missile interception, reconnaissance and other military operations, and meanwhile, the infrared detection technology also has wider application in a plurality of civil fields such as medical treatment, agriculture, security and the like.
The imaging development of infrared detectors, whether scanning or staring, mainly includes four major components, namely: the infrared imaging lens is mainly used for imaging a detected object onto the detector assembly; the infrared focal plane array is mainly used for converting infrared radiation into other electric signals which are convenient to process; the signal processing part is used for filtering the physical signal output by the infrared focal plane array and then converting the physical signal into a video signal; and the display receives the video signal and displays an image, so that a high-quality imaging effect is realized.
Up to now, monochromatic infrared focal plane detectors with short wave of 1-3 μm, medium wave of 3-5 μm, long wave of 8-12 μm and very long wave of >12 μm have been developed. However, with the development of science and technology, the probability of false alarm rate of the monochromatic infrared detector in the application of the military fields such as early warning, tracking, interception and the like is higher, and the increasingly developed military application cannot be met. In order to further meet the high-precision requirement of the detector in high-end military application, a detector structure design concept capable of realizing multiband detection is provided. In recent years, research and industrialization of infrared detectors at home and abroad are gradually developing towards multi-color and large-area array.
According to theory, the preparation of the multi-color infrared focal plane detector has two composition modes: the optical system is formed by sharing one optical system by a plurality of detector assemblies respectively corresponding to different wave bands; and secondly, a single multicolor infrared detector capable of responding to a plurality of wave bands shares one optical system. So far, most research institutions and companies at home and abroad adopt a second mode for preparing a multicolor infrared focal plane detector, for example, two photodiodes with different wave bands superposed are formed on a material for a bicolor infrared detector to realize a bicolor detection result. Currently, three-color and four-color infrared detectors are still developed by adopting a second mode, and three or four longitudinal laminated photodiodes are realized on the basis of material structure design, but due to the process limitations of epitaxial growth of materials for preparing the detectors, control of etching depth precision and the like, the realization of a large-area array two-color or even multi-color detector by adopting the mode still has great challenges.
Therefore, it is urgently needed to design a product for realizing a multiband large-area-array infrared focal plane detector, and to solve the problem of high difficulty in device process in the manufacturing process caused by the above-mentioned handicraft limitations.
Disclosure of Invention
It is an object of the present application to overcome the above problems or to at least partially solve or mitigate the above problems.
According to one aspect of the present application, there is provided a multicolor large area array infrared detector comprising:
the detector shell is used as an outer layer and used for protecting devices except the detector shell in the detector;
the optical window sheet is arranged at the top of the detector shell and used for transmitting light;
the rotating shaft is arranged on one side of the detector shell and positioned in the middle part of the detector shell and used for providing rotation;
one end of the transmission shaft is fixedly connected with the rotating shaft and is used for installing the roller and driving the roller to rotate;
one end of the roller is inserted into the other end of the transmission shaft and is fixedly installed with the transmission shaft, and the roller, the transmission shaft and the rotating shaft form a rotor of the detector;
the multiple groups of focal plane chip packaging Dewar devices are distributed on the axial plane of the roller along the axis of the roller and welded on the axial plane, wherein the wavelength of each group of focal plane chip packaging Dewar devices is the same, the wavelength of each group of focal plane chip packaging Dewar devices is different, the inside of each focal plane chip packaging Dewar device is in a high vacuum environment, and each focal plane chip packaging Dewar device is provided with an exposed metal pin header;
the refrigerating device is arranged at the cavity of the roller, adopts a tar mode for refrigeration and is used for refrigerating the plurality of groups of focal plane chip packaging Dewar devices;
the fixed shaft is arranged in the detector shell and used for fixing the electric brush;
the electric brush is fixed at the fixed shaft, the electric brush and the fixed shaft form a stator of the detector, and the electric brush is used for contacting with a metal pin header of the focal plane chip packaging Dewar device which rotates to the electric brush, so that the output of an electric signal is realized;
the detector comprises a lens, a signal processing circuit and a display, wherein the lens is fixed at the detector shell and used for imaging a detected target, the signal processing circuit and the display are externally connected at the detector shell, the signal processing circuit is used for filtering a physical signal output by the focal plane chip packaging Dewar device and then converting the physical signal into a video signal, and the display is used for receiving the video signal and displaying an image.
Optionally, each focal plane chip package dewar apparatus comprises:
the Dewar shell with the cold screen is combined with the cold screen into an integrated structure and is used as the outer layer of the detector core to protect the detector core in each focal plane chip packaging Dewar device, and the inner part of the detector core is blackened to play a role in absorbing stray light by the cold screen;
the optical filter is arranged at the top of the Dewar shell and is used for transmitting light required by the detector chip;
the ceramic frame is positioned at the bottom of the Dewar shell, and the metal pin headers are arranged on two side walls of the ceramic frame, which are connected with the circuit bonding pad; and
the detector chip comprises a photosensitive source material and a silicon-based circuit, wherein the photosensitive source material grows on a substrate in an epitaxial mode to form a photoelectric device, the photoelectric device and the silicon-based circuit form the detector chip in an inverted interconnection mode, the detector chip is pasted on the ceramic frame, and the circuit and the ceramic frame are connected through lead bonding so as to realize conversion and transmission of optical signals and electric signals.
Optionally, the photosensitive source material is selected from a refrigerant material or a non-refrigerant material.
Optionally, the refrigeration material comprises a group III-V, II-VI and group IV heterojunction, a quantum well, a quantum dot, a superlattice structure or a group III-V and group IV large-area array refrigeration detector material, and the non-refrigeration material comprises vanadium oxide and amorphous silicon.
Optionally, n edge surfaces are equally divided on the axial surface of the drum and are arranged in an axially symmetric manner, where n is greater than or equal to 1, the focal plane chip package dewar devices are welded on the axial surface of the drum, and the number of the multiple groups of focal plane chip package dewar devices welded on each edge surface may be 1, 2, 3 … … m, where m is greater than or equal to 1.
Optionally, the material of the roller is a material with high thermal conductivity, preferably the material of the roller is ceramic.
Optionally, the refrigeration device comprises a refrigeration gas chamber, the other end of the drum extends into the cavity of the drum, a refrigeration gas high-pressure air inlet is formed at the front end of the refrigeration gas chamber, and an exhaust hole is formed between the refrigeration gas chamber and the drum.
Optionally, the number of the brushes is two, and the brushes are respectively located at the nearest vertical distance from the optical window and are at the same horizontal plane with the top axial surface of the roller, so that synchronous transmission of optical signals and electrical signals is realized while the roller upper focal plane chip packaging dewar device rolls to the top end.
According to another aspect of the application, a preparation method for the multicolor large-area array infrared detector is provided, and the preparation method comprises the following steps:
step 100, preparing the focal plane chip packaging Dewar device;
step 200, mounting the focal plane chip packaging Dewar device and an electric brush, and welding the focal plane chip packaging Dewar device Dewar on the axial surface of the roller;
step 300, filling gas in a refrigerating gas chamber at the roller at the same time;
and 400, fixing the electric brush at a fixed shaft, fixing the lens at a detector shell, externally connecting a signal processing circuit and a display at the detector shell, installing an optical window sheet, and packaging the whole detector.
Optionally, the preparing of the focal plane chip package dewar apparatus in the step 100 includes:
101, preparing a focal plane chip photosensitive source material structure, preparing a silicon-based circuit and extending related materials, etching, passivating, interconnecting and thinning the focal plane chip photosensitive source material structure according to a standard detector chip preparation process;
102, connecting a photosensitive source material and a silicon-based circuit, adopting an inverted interconnection process to integrally paste a detector chip consisting of the photosensitive source material and the silicon-based circuit on a ceramic frame, and welding a circuit pad and a pad on the ceramic frame by a wedge welder in a lead bonding mode, wherein metal pins are correspondingly arranged on the edges of the side walls of two sides of the ceramic frame connected with the silicon-based circuit pad;
103, mounting the optical filter on the top of the internally blackened cold shield, and transmitting light required by the detector chip;
and step 104, welding the Dewar shell and the ceramic frame which are subjected to the steps in a vacuum environment to form a sealed integral chip unit.
The design architecture mode of the multicolor large-area-array infrared focal plane detector encapsulates focal plane chips with different detection wave bands in different dewars, then the focal plane chip encapsulation dewar device is arranged and welded on an axial surface of a roller according to a certain axial symmetry mode, detection of different wave bands is realized through rotation of the roller, and finally, a multicolor infrared detection image imaging graph is realized. The multi-color packaging method can realize multi-color by embedding and parallel connection of the single-color focal plane chip packaging Dewar device arrays, avoids technical difficulties in material growth and etching processes, saves process time and realizes low cost. In addition, this application polychrome large-area array infrared focal plane detector can also realize different wave band wavelength couplings and signal output according to practical field.
Furthermore, the refrigerating device adopts a coke soup mode (J-T) for refrigeration, so that the working temperature range of the multicolor large-area array infrared focal plane detector is wider, and the refrigerating temperature is lower than that of Stirling refrigeration adopted by the existing refrigeration type infrared detector.
Further, the present application is intended to be used in a wide range of applications, including chips of all materials or types that have been or are to be developed.
Further, the practicality of this application is stronger, and this application not only is suitable for the infrared detection field, and this kind of structure still can be applied to the preparation of polychrome laser instrument.
The above and other objects, advantages and features of the present application will become more apparent to those skilled in the art from the following detailed description of specific embodiments thereof, taken in conjunction with the accompanying drawings.
Drawings
Some specific embodiments of the present application will be described in detail hereinafter by way of illustration and not limitation with reference to the accompanying drawings. The same reference numbers in the drawings identify the same or similar elements or components. Those skilled in the art will appreciate that the drawings are not necessarily drawn to scale. In the drawings:
FIG. 1 is a schematic block diagram of a multicolor large area array infrared detector according to one embodiment of the present application;
FIG. 2 is a schematic block diagram of the focal plane chip package dewar apparatus shown in FIG. 1;
FIG. 3 is a schematic block diagram of the platen, focal plane chip package dewar assembly, refrigeration structure and transport axis shown in FIG. 1;
fig. 4 is a schematic structural view of one brush shown in fig. 1.
The symbols in the drawings represent the following meanings:
1 a detector housing; 2, fixing a shaft; 3, an electric brush; 4, exhausting holes; 5 rotating the shaft; 6, driving a shaft; 7, a roller; 8 focal plane chip package dewar device; 9 a high-pressure inlet of refrigerating gas; 10 an optical window; 11 the transmission shaft and the inside of the roller are fixedly embedded with a device; 12 a refrigerated gas chamber; 13 a drum internal expansion chamber;
31 metal brush, 32 brush shaft;
81 Dewar shell, 82 optical filter, 83 metal pin, 84 ceramic frame, 85 gold wire connecting unit, 86 photosensitive source material and 87 silicon-based circuit;
8111 a first short wave focal plane chip package dewar device; 8112 a second short wave focal plane chip package dewar device; 8121 a first medium wave focal plane chip package dewar device; 8122 a second medium wave focal plane chip packaging Dewar device; 8131 a first long wave focal plane chip package dewar device; 8132 a second long wave focal plane chip packaging Dewar device; 8141 a first VLP focal plane chip packaging Dewar device; 8142 a second VLP focal plane chip package Dewar device;
91 throttling the conduit.
Detailed Description
In the process of implementing the invention, the inventor also finds that the prior art also has the following characteristics: the signal is restrained due to the fact that the detection target is in the complex environment background, and therefore the problems that the recognition capability, the detection distance, the sensitivity and the resolution ratio of the detector are low are caused. In order to solve the problems, the application provides a multicolor large-area-array infrared focal plane detector which comprises the design and the assembly of monochromatic infrared detectors with different wave bands.
FIG. 1 is a schematic block diagram of a multicolor large area array infrared detector according to one embodiment of the present application. As shown in fig. 1, the present application provides a multicolor large area array infrared detector, which includes: the detector comprises a detector shell 1, an optical window sheet 10, a rotating shaft 5, a transmission shaft 6, a roller 7, a plurality of groups of focal plane chip packaging Dewar devices 8, a refrigerating device, a fixed shaft 2, an electric brush 3, a lens, a signal processing circuit and a display. The detector shell 1 serves as an outer layer for protecting the components of the detector except the detector shell 1. An optical window 10 is mounted on top of the detector housing 1 for light transmission. A rotation shaft 5 is installed at one side and at the middle of the probe housing 1 for providing rotation. One end of the transmission shaft 6 is fixedly connected with the rotating shaft 5 and is used for installing the roller 7 and driving the roller 7 to rotate. One end of the roller 7 is inserted into the other end of the transmission shaft 6 and is fixedly installed with the transmission shaft 6, and the roller 7, the transmission shaft 6 and the rotating shaft 5 form a rotor of the detector. Multiple groups of focal plane chip packaging Dewar devices 8 are distributed at the axial plane of the roller 7 along the axis of the roller 7 and are welded at the axial plane. Wherein, the wavelength of each group of focal plane chip packaging Dewar device 8 is the same, the wavelength of each group of focal plane chip packaging Dewar device 8 is different, the inside of each focal plane chip packaging Dewar device 8 is the high vacuum environment, and each focal plane chip packaging Dewar device 8 all has an exposed metal pin 83. The refrigerating device is arranged at the cavity of the roller 7, adopts a focal soup mode (J-T) for refrigeration, and refrigerates the multiple groups of focal plane chip packaging Dewar devices 8. A stationary shaft 2 is mounted inside the probe housing 1 for holding brushes 3. The electric brush 3 is fixed at the fixed shaft 2, the electric brush 3 and the fixed shaft 2 form a stator of the detector, and the electric brush 3 is used for contacting with a metal pin header 83 of the focal plane chip packaging Dewar device 8 which rotates to the position, so that electric signal output is realized. The lens is fixed at the detector shell 1 and used for imaging a detection object at the detector. The signal processing circuit and the display are externally connected with the detector shell 1. The signal processing circuit is used for filtering the physical signal output by the focal plane chip packaging Dewar device 8 and then converting the physical signal into a video signal. The display is used for receiving the video signal and displaying images.
As shown in fig. 1, in the large-area array multicolor infrared detector of the present application, focal plane chips of different detection bands are packaged in different dewars, then the focal plane chip packaging dewar devices 8 are arranged and welded on the roller 7 in a certain axially symmetric manner, detection of different bands is realized by rotation of the roller 7, and finally, imaging of a multicolor infrared detection image is completed. Specifically, when the rotating shaft 5 drives the rollers 7 to roll at a certain high rotating speed, each time when the axial surface of one roller 7 rotates to a position perpendicular to the optical window 10, light firstly enters through the optical window 10, then the light is filtered and the stray light is absorbed through the focal plane chip packaging dewar device 8 corresponding to the optical window 10, and the transmission shaft is in contact with the roller internal fixing embedding device 11 to drive the roller 7 to be in contact with the electric brush 3 to realize signal transmission. While cooling the chip dewar unit within the center of the drum 7. The entire focal plane chip package dewar apparatus 8 is still performed according to standard detector packaging processes. In this mode, with the high-speed rotation of the drum 7, the conversion of a plurality of photoelectric signals of different wave bands is realized, and image transmission is finally realized through signal processing. According to the infrared detector, the high-frequency transmission of signals of each wave band by the focal plane chip packaging Dewar device 8 can be realized within a certain rotating speed range, and the image frame frequency and the data transmission rate are improved.
The utility model provides a design framework mode of infrared focal plane detector of big area array of polychrome encapsulates the focal plane chip of different detection wave bands in different dewars, then arranges focal plane chip encapsulation dewar device 8 according to certain axial symmetry mode and welds on the axial plane of cylinder 7, realizes the detection of different wave bands through the rotation of cylinder 7, finally realizes the formation of image of polychrome infrared detection image. The device can realize multicolor only by embedding and parallel connection of the single-color focal plane chip packaging Dewar device 8 arrays, avoids the technical difficulties in material growth and etching processes, can effectively solve the problem of high difficulty of device processes in the preparation process of the existing multicolor infrared detector, saves process time and reduces cost. In addition, this application polychrome large-area array infrared focal plane detector can also realize different wave band wavelength couplings and signal output according to practical field, can greatly improve the frame frequency and the imaging pixel of detector simultaneously, realizes that polychrome high performance is surveyed.
Further, the present application is intended to be used in a wide range of applications, including chips of all materials or types that have been or are to be developed.
Further, the practicality of this application is stronger, and this application not only is suitable for the infrared detection field, and this kind of structure still can be applied to the preparation of polychrome laser instrument.
More specifically, in the present embodiment, the refrigerating device includes a refrigerating gas chamber 12 extending from the other end of the drum 7 into the cavity of the drum 7. The refrigerant gas chamber 12 has a refrigerant gas high-pressure inlet 9 at a front end thereof. The refrigerating gas chamber 12 and the drum 7 have an exhaust hole 4 therebetween.
Furthermore, the refrigerating device adopts a coke soup mode (J-T) for refrigeration, so that the working temperature range of the multicolor large-area-array infrared focal plane detector is wider, and the refrigerating temperature is lower than that of Stirling refrigeration adopted by the existing refrigeration type infrared detector. In the embodiment, the interior of the roller 7 is refrigerated in a coke-hot mode (J-T) mode, so that the volume of the detector can be reduced, and the lower working temperature can be realized compared with the refrigeration mode of the current detector. The focal plane chip packaging Dewar device 8 rotates along with the roller 7, the low-temperature working environment of the detector is guaranteed, and the focal plane chip packaging Dewar device 8 is refrigerated. The other side of the roller 7 is provided with a refrigerating device in a coke soup mode (J-T) mode, high-pressure refrigerating gas enters a refrigerating gas chamber 12 through a refrigerating gas high-pressure air inlet 9, when the high-pressure refrigerating gas controls the flow rate through a throttling pipeline 91 and enters an expansion chamber 13 in the roller, due to the difference of atmospheric pressure, the high-pressure gas instantaneously expands and absorbs heat to cool the surrounding environment and the focal plane chip packaging Dewar device 8, and the high-pressure gas is recovered to be low-pressure gas and is discharged through exhaust holes 4 on two sides in the roller 7.
More specifically, in the present embodiment, the multicolor large-area array focal plane detector adopts a back incidence detection mode.
More specifically, in the present embodiment, the material of the roller 7 is a material having high thermal conductivity. Preferably, the material of the drum 7 is ceramic.
Figure 2 is a schematic block diagram of the focal plane chip package dewar apparatus shown in figure 1. To better illustrate the internal construction of the dewar apparatus, the schematic of fig. 2 is transparent. In this embodiment, each focal plane chip package dewar device 8 includes: a dewar housing 81 with a cold shield, a filter 82, a ceramic frame 84, a detector chip (i.e. a photosensitive source material 86 and a silicon-based circuit 87). In this embodiment, the focal plane chip is fabricated according to a standard infrared detector chip fabrication process, and a vacuum dewar packaging process is employed, and an optical filter 82 is additionally disposed. The dewar case 91 and the cold shield are integrated into a whole structure, and the structure is used as the outer layer of the detector chip and is used for protecting the detector chip in each focal plane chip packaging dewar device 8. . An optical filter 82 is mounted on top of the cold shield for transmitting the light required by the detector chip. A ceramic frame 84 is located in the dewar housing 81 on the side opposite the cold shield. The ceramic frame has gold wire connection units 85. The two side walls of the ceramic frame connected with the circuit bonding pad are provided with the metal pin headers 83, and the metal pin headers 83 are responsible for transmitting signals of the detector in the focal plane chip packaging Dewar device 8 to an external device. The detector chip comprises a photosensitive source material 86 and a silicon-based circuit 87, the photosensitive source material 86 grows on the substrate in an epitaxial mode to form a photoelectric device, the photoelectric device and the silicon-based circuit 87 form the detector chip in an inverted interconnection mode, the detector chip is pasted on the ceramic frame 84, and the silicon-based circuit 87 and the ceramic frame 84 are connected through lead bonding to achieve transmission of electric signals. The photosensitive material 86 and the silicon-based circuit 87 are fabricated according to normal detector processes, including flip-chip interconnection and thinning processes.
More specifically, in practical applications, researchers may adjust the type of the photosensitive source in the focal plane chip package dewar apparatus 8 according to requirements, and if the detector is a refrigeration detector, the photosensitive source material 86 is selected from one of III-V (such as InGaAs or InAs/GaSb/AlSb type superlattice), II-VI (mercury cadmium telluride), group IV heterojunction, quantum well, quantum dot, superlattice structure, or group III-V and group IV large-area array detector materials, and if the detector is a non-refrigeration detector, the photosensitive source material 86 is selected from one of vanadium oxide and amorphous silicon material. Meanwhile, researchers can make the focal plane chip packaging Dewar device 8 meet the vacuum requirement according to the requirement, for example, welding and packaging the ceramic frame 84 and the Dewar shell 81 in a vacuum environment. (ii) a More specifically, in this embodiment, n edge surfaces are uniformly distributed on the axial surface of the drum 7 and are arranged in an axially symmetric manner, where n is greater than or equal to 1, the focal plane chip package dewar devices 8 are welded on the axial surface of the drum 7, and the number of the multiple groups of focal plane chip package dewar devices 8 welded on each edge surface may be 1, 2, 3 … … m, where m is greater than or equal to 1.
Fig. 3 is a schematic diagram of the drum, the focal plane chip package dewar apparatus, the refrigeration structure and the transmission shaft shown in fig. 1, more specifically, in the present embodiment, the drum 7 is a drum-mounted structure with a cavity, and has four prismatic cut-planes on its side, and 2 × 4 focal plane chip package dewar apparatuses 8 are respectively attached to the four prismatic cut-planes of the drum 7, specifically, two short-wave focal plane chip package dewar apparatuses, i.e., a first short-wave focal plane chip package dewar apparatus 8111, a second short-wave focal plane chip package dewar apparatus 8112, two medium-wave focal plane chip package dewar apparatuses, i.e., a first medium-wave focal plane chip package dewar apparatus 8121, a second medium-wave focal plane chip package dewar apparatus 8122, two long-wave focal plane chip package dewar apparatuses, i.e., a first long-wave focal plane chip package dewar apparatus 8131, a second long-wave focal plane chip package dewar apparatus 8132, two medium-wave focal plane chip package dewar apparatuses, i.e., a first long-wave focal plane chip package dewar apparatus, a second long-wave chip package dewar apparatus 8184, a high-wave optical filter apparatus 818, and a high-frequency optical filter apparatus 818, which can realize high-frequency image transmission by rotating at a high-frequency image transmission when the drum 7 and the drum 7 rotate at a high-frequency optical-band optical-transmission device 818, and the drum 7, and the optical-band optical-band optical-transmission device-optical-transmission device 818-optical-.
Fig. 4 is a schematic structural view of one brush shown in fig. 1. In this embodiment, the number of the electric brushes 3 is two, two fixed shafts 2 are installed on the assembly housing, and each fixed shaft 2 corresponds to one electric brush 3. Each brush 3 includes a metal brush 31 and a brush shaft 32. More specifically, two electric brushes 3 are respectively positioned at two sides of the focal plane chip packaging Dewar device at the position closest to the vertical distance of the optical window, so as to realize synchronous receiving and outputting of optical signals and electric signals when the focal plane chip packaging Dewar device 8 on the roller 7 rolls to the position of the top end. The optical window is a hole cut in the detector housing for mounting the optical window 10. The brush bristles 31 of the brush 3 are made of metal materials with metal conductive functions, the orientation of the brush bristles 31 is the metal pin header 83 of the top focal plane chip packaging Dewar device 8 of the roller 7, and the metal pin header 83 on the focal plane chip packaging Dewar device 8 is in contact with the metal brush bristles 31 when the roller 7 rotates to the top.
Referring to fig. 1, according to another aspect of the present application, there is provided a method for manufacturing the multicolor large-area array infrared detector, which comprises the following steps:
and step 100, preparing the focal plane chip packaging Dewar device 8.
Specifically, the step 100 includes:
101, preparing a focal plane chip photosensitive source material 86 structure, preparing a silicon-based circuit 87 and extending related materials, etching, passivating, interconnecting and thinning the materials according to a standard detector chip preparation process;
102, connecting the photosensitive source material 86 and the silicon-based circuit 87, integrally sticking a detector chip consisting of the photosensitive source material 86 and the silicon-based circuit 87 on the ceramic frame 84 by adopting a flip-chip bonding interconnection technology, welding a circuit pad and a pad on the ceramic frame 84 by adopting a wedge welder in a lead bonding mode to realize signal transmission, and correspondingly arranging metal pins 83 on the edges of the side walls at two sides of the connection of the ceramic frame 94 and the pad of the silicon-based circuit 87;
103, installing the optical filter 82 on the top of the internally blackened Dewar shell 81, and finally packaging the ceramic frame 84 and the photosensitive source material 86 as a whole in a Dewar device with a certain high-vacuum environment;
step 104, welding the dewar housing 81 and the ceramic frame 84 in a vacuum environment to form a sealed integral chip unit.
And 200, installing the focal plane chip packaging Dewar device 8, and welding the focal plane chip packaging Dewar device 8 on the axial plane of the roller 7. Step 300, filling gas in the refrigerating gas chamber 12 at the roller 7.
And 400, installing the fixed shaft 2 on the inner wall of the assembly shell, and correspondingly installing an electric brush 3 on the fixed shaft 2. Two brushes 3 are respectively positioned on two sides of the focal plane chip package dewar device which is the closest vertical distance from the optical window 10. Fixing the lens at the position of a detector shell 1, externally connecting a signal processing circuit and a display at the position of the detector shell 1, installing an optical window piece 10, and packaging the whole detector.
In other embodiments, the cooling gas chamber at the drum in step 300 is filled with gas, and if a non-cooling material is used, the cooling gas chamber inside the drum does not need to be filled with gas.
According to the preparation method of the multicolor large-area-array infrared detector, focal plane chips of different detection wave bands are packaged in different dewars, then the focal plane chip packaging dewar devices 8 are distributed and welded on the axial surface of the roller 7 according to a certain axial symmetry mode, detection of different wave bands is achieved through rotation of the roller 7, and finally imaging of multicolor infrared detection images is achieved. The multi-color packaging method can realize multi-color by embedding and parallel connection of the single-color focal plane chip packaging Dewar device 8 arrays, avoids technical difficulties in material growth and etching processes, saves process time and realizes low cost. In addition, this application polychrome large-area array infrared focal plane detector can also realize different wave band wavelength couplings and signal output according to practical field.
Furthermore, the application adopts a coke soup mode (J-T) for refrigeration, so that the working temperature range of the multicolor large-area-array infrared focal plane detector is wider, and the Stirling refrigeration adopted by the existing refrigeration type infrared detector reaches lower refrigeration temperature.
Further, the present application is intended to be used in a wide range of applications, including chips of all materials or types that have been or are to be developed.
Further, the practicality of this application is stronger, and this application not only is suitable for the infrared detection field, and this kind of structure still can be applied to the preparation of polychrome laser instrument.
It is to be noted that, unless otherwise specified, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which this application belongs.
In the description of the present application, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the present application.
Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. In the description of the present application, "a plurality" means two or more unless specifically defined otherwise.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
The above description is only for the preferred embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A multicolor large-area-array infrared detector is characterized by comprising:
the detector shell (1) is used as an outer layer and is used for protecting devices except the detector shell (1) in the detector;
an optical window (10) mounted on top of the detector housing (1) for transmitting light;
the rotating shaft (5) is arranged on one side of the detector shell (1) and is positioned in the middle and used for providing rotation;
one end of the transmission shaft (6) is fixedly connected with the rotating shaft (5) and is used for installing the roller (7) and driving the roller (7) to rotate;
a roller (7), one end of which is inserted into the other end of the transmission shaft (6) and is fixedly installed with the transmission shaft, wherein the roller (7), the transmission shaft (6) and the rotating shaft (5) form a rotor of the detector;
the multiple groups of focal plane chip packaging Dewar devices (8) are distributed at the axial plane of the roller (7) along the axis of the roller (7) and are welded at the axial plane, wherein the wavelength of each group of focal plane chip packaging Dewar devices (8) is the same, the wavelength of each group of focal plane chip packaging Dewar devices (8) is different, the inside of each focal plane chip packaging Dewar device (8) is in a high vacuum environment, and each focal plane chip packaging Dewar device (8) is provided with an exposed metal pin header (83);
the refrigerating device is arranged at the cavity of the roller (7), adopts a focal soup mode for refrigeration and is used for refrigerating the multiple groups of focal plane chip packaging Dewar devices (8);
a fixed shaft (2) mounted inside the probe housing (1) for fixing the brush (3);
the electric brush (3) is fixed at the fixed shaft (2), the electric brush (3) and the fixed shaft (2) form a stator of the detector, and the electric brush (3) is used for contacting a metal pin header (83) of a focal plane chip packaging Dewar device (8) which rotates to the electric brush (3) to realize the output of an electric signal; and
the detector comprises a lens, a signal processing circuit and a display, wherein the lens is fixed at the detector shell (1) and used for imaging a detected target, the signal processing circuit and the display are externally connected at the detector shell (1), the signal processing circuit is used for filtering a physical signal output by a focal plane chip packaging Dewar device (8) and then converting the physical signal into a video signal, and the display is used for receiving the video signal and displaying an image.
2. The large area multicolor array infrared detector according to claim 1, wherein each focal plane chip package dewar apparatus (8) comprises:
the Dewar shell (81) with the cold screen is combined with the Dewar shell (81) and the cold screen to form an integrated structure which is used as the outer layer of the detector chip to protect the detector chip in each focal plane chip packaging Dewar device (8), and the inner part of the Dewar shell is blackened to play a role in absorbing stray light by the cold screen; (ii) a
The optical filter (82) is arranged at the top of the Dewar shell (81) and is used for transmitting light required by the detector chip;
the ceramic frame (84) is positioned at the bottom of the Dewar shell (81), and the two side walls of the ceramic frame (84) connected with the circuit bonding pads are provided with the metal pin headers (83); and
the detector chip comprises a photosensitive source material (86) and a silicon-based circuit (87), wherein the photosensitive source material (86) grows on a substrate in an epitaxial mode to form a photoelectric device, the photoelectric device and the silicon-based circuit (87) form the detector chip in a flip interconnection mode, the detector chip is pasted on the ceramic frame (84), and the circuit and the ceramic frame (84) are connected through lead bonding so as to realize conversion and transmission of optical signals and electric signals.
3. The IR detector according to claim 2, wherein the photosensitive source material (86) is selected from a refrigerant material or a non-refrigerant material.
4. The multi-color large-area-array infrared detector according to claim 2, wherein the refrigerant material comprises group III-V, II-VI and group IV heterojunctions, quantum wells, quantum dots, superlattice structures or large-area-array detector materials, and the non-refrigerant material comprises vanadium oxide and amorphous silicon.
5. The infrared detector according to claim 1, characterized in that the axial plane of the drum (7) is divided into n equal prismatic planes, and the arrangement is axially symmetrical, where n is greater than or equal to 1, the focal plane chip package dewar devices (8) are welded on the axial plane of the drum (7), and the number of the focal plane chip package dewar devices (8) welded on each prismatic plane can be 1, 2, 3 … … m, where m is greater than or equal to 1.
6. The large area-array multicolor infrared detector according to claim 1, wherein the material of said drum (7) is a material having high thermal conductivity, preferably the material of said drum (7) is ceramic.
7. The infrared detector according to claim 1, characterized in that the refrigerating device comprises a refrigerating gas chamber (12) extending from the other end of the drum (7) into the cavity of the drum (7), the refrigerating gas chamber (12) has a high-pressure refrigerating gas inlet (9) at the front end, and the refrigerating gas chamber (12) and the drum (7) have an exhaust hole (4) therebetween.
8. The infrared detector according to claim 1, characterized in that the number of the brushes (3) is two, and the brushes are respectively located at the nearest vertical distance from the optical window and are at the same horizontal plane with the top axial plane of the roller (7), so as to realize the synchronous receiving and outputting of the optical signal and the electric signal when the focal plane chip package Dewar device (8) on the roller (7) rolls to the top every time.
9. The method for preparing a multicolor large-area-array infrared detector as claimed in any one of claims 1 to 8, characterized by comprising the following steps:
step 100, preparing the focal plane chip packaging Dewar device (8);
step 200, installing the focal plane chip packaging Dewar device (8) and the electric brush (3), and welding the Dewar of the focal plane chip packaging Dewar device (8) on the axial plane of the roller (7);
300, filling gas in the refrigerating gas chamber (12) at the roller (7) at the same time; step 400, fixing the electric brush (3) at the fixed shaft (2), fixing the lens at the detector shell (1), externally connecting the signal processing circuit and the display at the detector shell (1), installing an optical window sheet (10), and packaging the whole detector.
10. The method of manufacturing according to claim 9, wherein the step 100 of manufacturing the focal plane chip package dewar apparatus (8) comprises:
101, preparing a focal plane chip photosensitive source material (86) structure, preparing a silicon-based circuit (87) and extending, etching, passivating, interconnecting and thinning related materials according to a standard detector chip preparation process;
102, connecting a photosensitive source material (86) and a silicon-based circuit (87), integrally sticking a detector chip consisting of the photosensitive source material (86) and the silicon-based circuit (87) on a ceramic frame (84) by adopting a flip-chip interconnection technology, welding a circuit pad and a pad on the ceramic frame (84) by adopting a wedge welder in a lead bonding mode, and correspondingly arranging metal pins (83) on the edges of the side walls of two connected sides of the ceramic frame (84) and the pad of the silicon-based circuit (87);
103, mounting an optical filter (82) on the top of the internally blackened cold shield, and transmitting light required by the detector chip;
and step 104, welding the Dewar shell (81) and the ceramic frame (84) which are subjected to the steps in a vacuum environment to form a sealed integral chip unit.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120113506A1 (en) * | 2009-04-27 | 2012-05-10 | Gmitro Arthur F | Novel Multi-Point Scan Architecture |
| CN103968950A (en) * | 2013-01-24 | 2014-08-06 | 通用电气公司 | Multi-color Pyrometry Imaging System And Method Of Operating The Same |
| CN105928621A (en) * | 2016-04-18 | 2016-09-07 | 中国电子科技集团公司第十研究所 | Double-band infrared detector assembly |
| CN106500835A (en) * | 2016-09-22 | 2017-03-15 | 北京空间机电研究所 | A kind of haplotype dual-band infrared probe assembly for being suitable to low temperature environment |
-
2020
- 2020-03-31 CN CN202010243616.7A patent/CN111426398B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120113506A1 (en) * | 2009-04-27 | 2012-05-10 | Gmitro Arthur F | Novel Multi-Point Scan Architecture |
| CN103968950A (en) * | 2013-01-24 | 2014-08-06 | 通用电气公司 | Multi-color Pyrometry Imaging System And Method Of Operating The Same |
| CN105928621A (en) * | 2016-04-18 | 2016-09-07 | 中国电子科技集团公司第十研究所 | Double-band infrared detector assembly |
| CN106500835A (en) * | 2016-09-22 | 2017-03-15 | 北京空间机电研究所 | A kind of haplotype dual-band infrared probe assembly for being suitable to low temperature environment |
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