CN111418061B - 用作rc滤波器的单个电容器 - Google Patents

用作rc滤波器的单个电容器 Download PDF

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CN111418061B
CN111418061B CN201780097308.4A CN201780097308A CN111418061B CN 111418061 B CN111418061 B CN 111418061B CN 201780097308 A CN201780097308 A CN 201780097308A CN 111418061 B CN111418061 B CN 111418061B
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CN111418061A (zh
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李霖
李晓明
董贤辉
景卫兵
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Texas Instruments Inc
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Texas Instruments Inc
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Abstract

IC(100)包含：RC滤波器；位于第一介电层(120b)下方的掺杂层(120c)；位于第一介电层上的多晶硅层，所述多晶硅层提供所述滤波器的电容器(120)的多晶硅板(120a)；以及一或多个MOSFET的一或多个栅极。第二介电层(129)位于所述多晶硅板上。输入触点(131a')位于所述多晶硅板的一端，并且输出触点(131b')位于相对端。金属层包含提供至少与输入触点的接触的金属(132a)和提供与输出触点的接触的金属(132b)。模拟电路(130)包含具有耦接到所述RC滤波器的I/O节点的MOSFET。

Description

用作RC滤波器的单个电容器
技术领域
所公开的方面涉及具有电阻器与电容器(RC)滤波器的半导体装置。
背景技术
RC滤波器(或RC网络)是用于多种不同的集成电路(IC)、特别是模拟电路的通用电路单元。一个实例是用于实现低通(LP)滤波器，所述低通滤波器用于滤除高频噪声、抑制电磁干扰(EMI)或提供更稳定的输出信号。然而，RC滤波器也可以被配置为高通滤波器。形成一阶(单极)RC滤波器的传统方法是在管芯上并排使用两个分立装置(包含单独的R和串联连接的C)，并且在低通滤波器情况下，来获得RC滤波器在C板上的输出。
通常，R的电阻需要为高值，典型地在数十欧姆到数十兆(106)欧姆的范围内。薄层电阻(以欧姆/平方(sq)为单位)是用于表征不同材料的与R层厚度成反比的R区域独立电阻测量结果。对于不同的材料，薄层电阻显著变化，从对于金属层的几毫欧姆/平方到对于未掺杂的多晶硅层的几十千欧姆/平方。当知道了R的形状(因此其长度和宽度)时，就知道了平方数，所述平方数使得能够使用薄层电阻乘以平方数来计算R的电阻值。
发明内容
提供本发明内容以便以简化形式介绍在下文中在包含所提供的附图的具体实施方式中进一步描述的所公开概念的简要集合。本发明内容不旨在限制所要求的主题的范围。
所公开的方面包含用于形成IC的方法，所述方法包含形成包含至少一个修改以使其能够用作RC滤波器的单个C以及由此而来的IC，所述IC包含模拟电路，所述模拟电路包括至少一个具有耦接到RC滤波器的输入节点或输出(I/O)节点的金属氧化物半导体场效应晶体管(MOSFET)。所公开的IC包含：RC滤波器；位于第一介电层下方的掺杂扩散层；位于第一介电层上的多晶硅层，所述多晶硅层提供RC滤波器的C的多晶硅板和IC上的至少一个MOSFET的栅极。
第二介电层位于多晶硅板上。输入触点位于多晶硅板的一端并且输出触点位于多晶硅板的相对端。金属层至少接触输入触点和输出触点。模拟电路包含至少一个具有耦接到RC滤波器的I/O节点的MOSFET。
附图说明
现在将参考附图，附图不一定按比例绘制，其中：
图1A和图1B是根据示例方面的IC的一部分的横截面图，其中图1B是示出了经修改以用作作为IC的一部分的所公开的RC滤波器的所公开的C的更详细的视图，其中C的多晶硅板是其顶板。
图1C是根据示例方面的IC的一部分的横截面图，示出了经修改以用作作为IC的一部分的所公开的RC滤波器的所公开的C，其中C的多晶硅板是其底板。
图2示出了根据示例方面的包括RC滤波器的第一布置，其中根据对多晶硅板的修改，RC滤波器的布局具有最小电阻值和不变的电容值。
图3示出了根据示例方面的包括RC滤波器的第二布置，其中根据对多晶硅板的修改，RC滤波器具有中等电阻值和不变的电容值。
图4示出了根据示例方面的包括RC滤波器的第三布置，其中根据对多晶硅板的修改，RC滤波器具有最大电阻值和不变的电容值。
图5A到F示出了在形成包含所公开的RC滤波器的IC的示例方法中在连续的工艺步骤之后的结果的横截面图。
图6示出了具有顶部金属板的RC滤波器，所述顶部金属板使用多晶硅中间板在IC上短接到底部掺杂的半导体板，使得所得结构形成夹层结构。
图7描绘了包含形成在半导体衬底上的模拟电路的模拟IC，所述半导体衬底包括至少一个具有耦接到RC滤波器的IO节点的MOSFET。
图8A示出了在接收到被示出为IN的输入脉冲之后的瞬态性能，所述瞬态性能示出了作为时间的函数的来自具有单独的R和C的传统RC滤波器以及被适当建模为分布式RC滤波器的所公开的RC滤波器的Vout，而图8B示出了这些相应的RC滤波器的归一化信号幅度与频率的曲线图。
具体实施方式
参考附图描述了示例方面，其中使用相似的附图标记指代表示类似或相当的元件。所展示的动作或事件顺序不应被解释为具有限制性，因为一些动作或实践可以以不同的顺序发生和/或与其它动作或事件同时发生。此外，实施根据本公开的方法并不需要一些所展示的动作或事件。
而且，如本文在没有进一步限定的情况下所使用的术语“耦接到”或“与…耦接”(等等)旨在描述间接或直接的电连接。因此，如果第一装置“耦接”到第二装置，则所述连接可以通过路径中只有寄生现象的直接电连接进行，或者通过借助于包含其它装置和连接的介入项的间接电连接进行。对于间接耦接，介入项通常不修改信号的信息，但可以调节其电流电平、电压电平和/或功率电平。
所公开的方面认识到，在一些具有RC滤波器的IC应用中，RC滤波器的R的电阻值的准确度对于IC的功能可能并不重要。包括与串联连接的分立的C并排的分立的R的常规RC滤波器将消耗大量的面积，因为这些单独的滤波器元件中的每个滤波器元件需要IC区域。多晶硅通常用于C的板之一。通过控制多晶硅层表面上硅化物的存在并且通过控制多晶硅掺杂，人们可以提供在10欧姆/平方到500千欧姆/平方范围内的多晶硅电阻值。如果IC工艺仅提供一个多晶硅层，则所述多晶硅层通常还将用作MOS栅极。在可以提供一个以上多晶硅层的工艺中，底部多晶硅层通常还用作MOS栅极。通过将C的介电层的厚度控制为很薄，人们可以获得很高的单位电容值，如在从0.1fF到20fF/μm2的范围内。
所公开的RC滤波器修改了通常为平行的板C的多晶硅板以提供设计可调的薄层电阻，并且因此提供可调的电阻值并且独立地提供设计可调的电容值。C的多晶硅板可以是如下所述的图1A和B所示的顶板(例如，掺杂硅之上的多晶硅)或如下所述的图1C所示的底板(多晶硅之上的金属)，所述多晶硅板在任一配置中具有被配置成还提供R的特征的多晶硅板。结合其自身的电容，所公开的RC滤波器使用C的区域充当RC滤波器。
例如，在包含多晶硅层上的硅化物的IC工艺中，使用硅化物阻挡，可以控制电容器的多晶硅板上用于硅化物形成的产生区，以阻挡在多晶硅板之上形成硅化物，并且还可以如通过(例如，用掩模层)阻挡IC上的MOS装置的源极/漏极注入来控制多晶硅板(通常为C的顶板)的掺杂。这提供了电阻率并且因此与将以其它形式来自多晶硅板的电阻值相比提供了显著更高的薄层电阻值。在所公开的多晶硅板修改期间，C的电容(由板面积、介电材料的厚度和介电材料的介电常数设定)不会改变。因此，通过单个C区域实现分布式RC滤波器。实施所公开的RC滤波器无需任何另外的一或多个IC掩模。
对于IC上的理想C，顶板和底板的电阻通常被设计为尽可能低，因为所述电阻是其中由C提供电容的串联电阻。然而，所公开的RC滤波器代替地使用C的多晶硅板充当R，使得在一些实例中有意升高了多晶硅板的薄层电阻。在对多晶硅板进行修改期间不会改变电容值，因为C的电容由介电材料和其厚度主导。在修改多晶硅板的步骤期间，所公开的方法不会改变电容。以下各项被认为是影响板多晶硅薄层电阻的主要要素：
1.在其上的硅化物的存在，如果存在，则所述硅化物会降低多晶硅板的总电阻值，使得当期望升高多晶硅板的电阻时，工艺中多晶硅上的硅化物受阻。
2.应用到多晶硅板的掺杂。多晶硅板常规接收轻掺杂漏极(LDD)注入物和应用到IC上的MOS装置的源极和漏极注入。由于与LDD注入物相比，源极和漏极注入物的剂量高很多，因此源极和漏极注入物将显著降低多晶硅板的薄层电阻，以使在一些布置中，源极和漏极注入物被阻止到达多晶硅板区域。
如上所述，多晶硅板可以是位于p阱之上的顶板，如NMOS栅极C(具有n+多晶硅栅)，或者位于n阱之上的顶板，如PMOS栅极电容器(具有p+多晶硅栅)或者与底板和金属顶板一起作为中间板(参见如下所述的图6)。另一个布置是利用第二多晶硅板来形成可以用于具有两个(或两个以上)多晶硅层的IC工艺中的多晶硅-多晶硅C。一些模拟IC工艺提供两个多晶硅层，其中一些特殊用途的IC工艺甚至提供多达五个或五个以上的多晶硅层。又另一个布置将多晶硅板作为C的底板，其中金属(通常为电介质(例如，前金属电介质)之上的金属1(M1))位于所公开的多晶硅板之上。因此，所公开的多晶硅板可以是C的顶板、底板或中间板。
图1A和图1B是根据示例方面的IC 100的一部分的横截面图，其中图1B是示出了经修改以用作作为IC的一部分的所公开的RC滤波器的所公开的C120的更详细的视图，其中C的多晶硅板是其顶板。IC 100形成于衬底105的半导体表面上，例如作为在可以包括p+体硅衬底的衬底105上提供半导体表面106的p-外延(epi)层。
衬底105和/或半导体表面106可以包括硅、硅锗、其它第4族材料或包含III-V或II-VI化合物半导体材料的其它半导体材料。IC 100还包含通过电路系统块示出的功能电路系统130，所述电路系统块实现并执行期望的功能，如数字IC(例如，数字信号处理器)或模拟IC(例如，放大器或功率转换器)的功能并且在一个实例中，BiCMOS(MOS和双极)IC的功能。在所公开的IC上设置功能电路系统的能力可以变化，例如，范围从简单的装置到复杂的装置。功能电路系统内含有的特定功能对于所公开的IC而言并不重要。功能电路系统130可以包括模拟电路系统，所述模拟电路系统包括具有耦接到RC滤波器120的输入节点或输出节点的至少一个MOSFET。图1B中的虚线用于指示C120与功能电路系统130之间的耦接。
RC滤波器被实施为经修改的C120，如所示出的，所述经修改的C包括可以是掺杂n型或p型的多晶硅顶板120a和包括可以是p阱或n阱的掺杂扩散层的底板120c。介电层120b位于多晶硅顶板120a与底板120c之间，所述介电层可以是也由IC 100上的MOS装置使用的栅极电介质(例如，氧化硅)，如包括2nm到200nm的氧化硅或氮氧化硅。图1B示出了位于多晶硅顶板120a的顶部上的如包括CoSi2或TiSi2等的硅化物层126，其总体上位于IC 100上的包含如图1B所示的接触p+触点142和n+触点141两者的其它地方的多晶硅之上。如本领域已知的，当将硅化物用作互连件时，所述硅化物最小化多晶硅的寄生电阻，所述硅化物还降低了到硅或到多晶硅的接触电阻。
图1A和/或1B所示的其它层包含位于多晶硅顶板120a的侧壁上的间隔物127，以实现形成轻掺杂漏极(LDD)135，如包括氮化硅，并且包含示出为场氧化物128的氧化物隔离，所述氧化物隔离还可以是沟槽隔离，如浅沟槽隔离(STI)。还存在层间介电(ILD)层129，所述层间介电层具有位于形成于ILD层129中的通孔(参见如下所述的图5D中的通孔131)中的导体(例如，钨(W))填充材料137以提供经填充的通孔131'，从而接触半导体表面上的各种节点。示出为金属1的经过图案化的金属层具有多个金属部分，所述多个金属部分示出为包含C120的分别接触经填充的通孔131a'和通孔131b'的输入(IN)端132a和输出(OUT)端132b，以提供到多晶硅顶板120a的接触，并且包含使用经填充的通孔131'接触掺杂n+141触点和p+142触点(图1B所示的触点142)的金属134。在图1B中，多晶硅顶板120a的一端是经填充的通孔131'上的示出为IN 132a的金属部分，并且在多晶硅顶板120a的相对端是经填充的通孔131'上的示出为OUT 132b的金属部分。
底板120c可以是位于埋层108的顶部上的n阱，并且在底板120c是n阱时，掺杂有另一类型的另一阱被示出为作为p阱的133。当底板120c是n阱时，到底板120c的掺杂触点141为n+触点，并且到作为p阱的阱133的触点142是p+触点。尽管图1A和图1B在掺杂触点141和142之上未示出，但是这些触点的顶部上还可以有硅化物层，以降低经过填充的通孔131'与掺杂半导体之间的触点的电阻。埋层108是RC滤波器的任选层。
图1C是根据示例方面的IC 150的一部分的横截面图，其示出了经修改以用作作为IC的一部分的所公开的RC滤波器的所公开的C170，其中C170的多晶硅板120a是其顶板。在此方面，C 170的顶板是位于ILD层129上的示出为134'的金属板。
存在其中将经修改的多晶硅板修改成以用作如下所述的RC滤波器的三个示例C布置。基于以下所描述的C布置，可以存在多种变体。这些所公开的C布置提供最小电阻和不变电容(参见如下所述的图2)、中等电阻和不变的电容(参见如下所述的图3)以及最大电阻和不变的电容(参见如下所述的图4)。
图2示出了包括RC滤波器200的第一布置，其中由于对多晶硅顶板120a的修改，RC滤波器200的布局具有最小电阻和不变的电容。即使C的多晶硅顶板120a的材料或其掺杂没有改变，但由于多晶硅顶板120a仍然接收硅化物126和源极与漏极注入物来形成n+触点141，因此多晶硅顶板120a仍然存在显著的固有电阻。此外，不需要改变多晶硅顶板120a的形状，使得多晶硅顶板120a可以具有包含如本文中总体上示出的矩形形状的各种形状。
IN端132a和OUT端132b可以包括含多个通孔的串。如所示出的，IN端132a被示出为金属条134a，所述金属条通过含多个填充通孔131'的串连接到多晶硅顶板120a的一端。类似地，OUT端132b被示出为金属带134b，所述金属带通过含多个填充通孔131'的串连接到多晶硅顶板120a在长度方向上的相对端。如本领域中已知的，此种多个通孔布置在工艺中通常被称为接触层。
在这方面，作为底板120c的掺杂扩散层被示出为与H形金属条134c(包含在多晶硅顶板120a之上)接触，所述H形金属条被识别为接地(GND)端，所述接地端通过掺杂触点141上的硅化物层126通过如所示出的含多个填充通孔131'的串接触到底板120c的相应端(两端接触以减小寄生电阻)。注意，RC滤波器的第二端(在此为被示出为底板120c的掺杂扩散层)不需要接地，如下文描述的图7所示出的。
因此，IN端132a和OUT端132b是RC滤波器200(包含R的C)的一部分，而不仅是到RC滤波器的电容器的两个连接。因此，通过将如图2所示的RC滤波器200的OUT端132b的位置改变到多晶硅顶板120a的与在多晶硅顶板120a的底端上的IN端132a和RC滤波器200的OUT端132b相对的端，可以利用多晶硅顶板的固有电阻(通常约为几百欧姆)以提供具有最小R值的RC滤波器200。对多晶硅板的仅包括触点布局变化的这种修改为RC滤波器200提供与所提供的电容串联的相对较小的电阻(与其它所公开的布置相比)。
图3示出了包括RC滤波器300的第二布置，其中RC滤波器300具有中等电阻值和不变的电容值。包含硅化物阻挡，使得多晶硅顶板120a缺少在IC上的多晶硅上其它地方的硅化物层。通过添加硅化物阻挡层来阻止在多晶硅顶板120a上产生硅化物，多晶硅板仅接收源极和漏极注入物，使得与包含顶部多晶硅和源极/漏极注入物的多晶硅电阻值相比，可以获得约10倍或十倍以上的电阻。包括硅化物阻挡的对多晶硅顶板120a的这种修改因此为RC滤波器300提供了中等电阻值和不变的电容值。RC滤波器300的IN端132a、接地和OUT端132b与图2所示的RC滤波器200的多个通孔触点具有相同位置。
图4示出了包括RC滤波器400的第三布置，其中RC滤波器400具有最大电阻值和不变的电容值，并且没有将硅化物或源极和漏极注入物施加到多晶硅顶板，因此现在示出为120a1，仅将LDD注入物注入到多晶硅顶板120a中。这可以通过添加硅化物阻挡来实现，所述硅化物阻挡阻止在多晶硅顶板120a上产生硅化物，并且也阻挡使用掩模的源极和漏极注入物到达多晶硅顶板120a。因此，与具有硅化物和源极/漏极注入物的固有电阻值相比，RC滤波器400提供约为100到1,000倍的电阻值，以提供具有最大电阻值和不变的电容值的RC滤波器400。
图5A到E是在形成IC的示例方法中在连续工艺步骤之后的结果的横截面图，所述IC包含所公开的RC滤波器以及在此实例中示出为PMOS晶体管550的MOSFET。通常可以使用任何数量的众所周知的掩模、蚀刻和扩散或注入工艺。图5A示出了在形成掺杂扩散层之后的结果，所述掺杂扩散层被示为用于在介电层120b下方形成C的底板120c，所述介电层提供形成在至少具有半导体表面的衬底105上的C的电介质。掺杂扩散层也为被示出为120c'的PMOS装置提供n阱。被示出为底板120c和n阱120c'的掺杂扩散层各自被示出为形成在有源区域中，所述有源区域位于示出为也可以是STI的LOCOS的场氧化物128区域之间。可以通过离子注入或通过扩散来添加用于底板120c和n阱120c'的掺杂物，以在半导体表面中提供p型或n型杂质，如在n型杂质的情况下包括砷或磷。
通过控制电介质层120b的厚度，可以获得高单位电容值，所述电介质层在此实例中也是使IC上的MOS装置变薄的栅极电介质层。通过热氧化或通过沉积工艺形成的电介质层120b作为栅极电介质层可以在大约10nm到200nm的厚度范围内。因此，此电介质层120b的厚度可以与在衬底105上的其它地方生长的栅极电介质层的厚度相同，以用作包含所示出的工艺中的PMOS装置的IC上的MOS晶体管的栅极电介质(例如，栅极氧化物)。
图5B示出了在形成图案化的掺杂多晶硅层之后的结果，包含在电介质层120b上形成用于C的示出的多晶硅顶板120a和用于工艺中的PMOS装置的栅极电极120p。可以通过低压化学沉积(LPCVD)沉积多晶硅，然后蚀刻所述多晶硅以提供期望的有效C板区域和MOS装置的栅极。如上所述，通过控制多晶硅顶板120a的表面上硅化物的存在并且通过控制多晶硅板的掺杂浓度，可以获得用于RC滤波器的高单位多晶硅电阻值。
然后在用于C和用于栅极电极120p的所示出的多晶硅顶板120a的侧壁上形成间隔物(例如，使用反应离子蚀刻(RIE))。间隔物形成之后是p源极/漏极掩模层和注入物，以形成用于工艺中的PMOS装置550的被示出为142p的p+源极和漏极区域以及IC上需要的如用于与如NMOS装置的p阱进行p阱接触的任何p+触点，以及n源极/漏极掩模层和注入物，以形成RC滤波器的n+触点141和用于与PMOS装置550的n阱120c'接触的n阱触点141p。LDD的形成通常也包含在内。图5C示出了间隔物形成之后的结果，接着是p+源极/漏极和n+源极/漏极的层。
图5D示出了形成ILD层129之后的结果。ILD层129是沉积的介电层，如使用基于原硅酸四乙酯(TEOS)的沉积工艺。图5E示出了在ILD层129中形成孔之后的结果，以提供通孔131，所述通孔在填充时提供用于触点的填充通孔，所述触点包含与多晶硅顶板120a的一端接触的输入触点、与多晶硅顶板120a的相对端接触的输出触点和与底板120c的掺杂扩散层接触的填充触点。
图5F示出了填充通孔131之后的结果，以提供用于RC滤波器和工艺中的PMOS装置550的填充通孔131'，随后形成包含的金属，以形成RC滤波器的IN 132a和OUT132b。可以将图5E所示的RC滤波器看作是类似于用作如上所述的图1B中示出的RC滤波器的C120。如本领域中已知的，IC工艺然后可以包含随后的金属层堆叠形成，所述金属层之间具有ILD层，随后进行钝化处理。
可以以多种形状提供所公开的RC滤波器，比如如上所述的矩形。不同的形状提供不同的电阻/电容组合。通常以欧姆为单位的可达到的电阻值包含10/20/50/300/1k/2k/50k/100k/300k/600k/1M/1.5M/2.4M欧姆。通常以fF(1fF＝1x10-15F)为单位的可获得的电容值为30fF到240fF(＝0.24pF)。
可以使用金属1(或另一金属层，如金属2或金属3)为RC滤波器提供额外的电容，如对于在通过在多晶硅板上使用金属层而不会增加任何区域的情况下在掺杂半导体底板上方具有多晶硅板的C，约为40fF以上。图6示出了具有顶部金属板134'的RC滤波器600，所述顶部金属板通过填充通孔131'与n+触点141上的硅化物126接触使用位于两者之间的多晶硅中间板120a'在IC上短接到RC滤波器的底板120c，使得所得结构形成夹层结构。与图2所示的RC滤波器一样，IN端132a和OUT端132b被示出为含多个通孔的串，其中IN端132a被示出为通过含多个填充通孔131'的串连接到多晶硅顶板120a的一端的金属条134a。
类似地，OUT端132b被示出为通过含多个填充通孔131'的串在长度方向上连接到多晶硅顶板120a的相对端的金属条134b。在这方面作为底板120c的掺杂扩散层具有顶板134'，所述顶板通过所示出的含多个填充通孔131'的串耦接到其在底板120c的相应端(两端接触以减小寄生电阻)上的n+触点141。因此，将在金属板134'与多晶硅顶板120a之间形成寄生C，如具有大约40fF的电容，所述电容与RC滤波器多晶硅板在掺杂半导体底板电容上的电容电并联(因此电容相加)。
可达到的电阻和可达到的电容值是通过C形变化通常可以在有限区域内获得的范围。可达到的电阻和可达到的电容值范围并不意味着任何一个可达到的电阻都可以与所有可达到的电容匹配以进行组合，反之亦然。例如，对于1k欧姆的电阻值，可达到的电容通常可在80fF到200fF之间变化。但是，当改变工艺时，所述电容可能会改变。
所公开的RC滤波器与传统的管芯上RC滤波器不同，所述管芯RC滤波器是通过具有单个R和单个C的集总模型适当地建模的。通过对多晶硅板的所公开的修改，适当的模型转变为分布式模型，如对于一个实例将所述模型适当地建模为具有10个级，其中每级RC具有相同的电阻和电容值。
与在曲折或波纹路径中可以具有多晶硅作为R的已知RC滤波器相比，所公开的RC滤波器在RC滤波器的相对较高的频率范围内(如，在10MHz至100MHz的范围内)可以实现更好的性能。此种已知的RC滤波器只能在最高大约1MHz到2MHz的频率下工作。此种已知的RC滤波器的频率性能受到具有曲折或波纹路径的RC滤波器的配置方式的限制。此类路径形状确实提供了更高的电阻值。然而，此布置将产生更多的寄生电容，这通常会严重降低RC滤波器的高频性能。
相比之下，所公开的RC滤波器使用多晶硅板，其中输入位于C的一端，并且输出位于相对端，并且R是笔直的(不在曲折或波纹路径中)，使得只有很小的寄生电容会产生，并且R不需要增加的管芯面积。所公开的RC滤波器通常能够在10MHz至100MHz的频率范围内工作，这意味着RC滤波器不限于低通滤波器，并且还可以用于更高频率应用(如高频范围内的带通滤波器)以及高频环路中的反馈路径。而且，如上所述，所公开的RC滤波器与现有的IC工艺兼容，并且不需要任何额外的IC掩模级或工艺步骤来实现。
图7描绘了在衬底105上形成的包含模拟电路的模拟IC 700，所述模拟电路包括至少一个被示为运算放大器710的MOSFET，所述MOSFET以反相配置被配置成包含至少一个RC滤波器的二阶多反馈低通滤波器。如本领域中已知的运算放大器710包含被配置成实施差分放大器的晶体管(双极、MOS或BiCMOS)和Rs，所述差分放大器驱动电压放大器，所述电压放大器驱动输出放大器。示出了包含两个RC滤波器的IC 700，所述RC滤波器包含包括R3和C4的RC滤波器2001和包括R4和C5的RC滤波器2002。C5的两个端均未连接接地，而C4的一个端连接接地。如所示出的，当RC滤波器2001和RC滤波器2002与运算放大器710和R5(提供第二反馈路径)组合时，实现二阶多反馈有源低通滤波器。
实例
以下特定实例进一步说明了所公开的方面，所述实例不应被解释为以任何方式限制本公开的范围或内容。
图8A和8B示出了传统RC滤波器的模拟结果，所述传统RC滤波器具有适当地建模为单个R和单个C的串联连接的多晶硅R和单独的C的以及适当地建模为分布式RC滤波器的所公开的RC滤波器，所述分布式RC滤波器具有多个串联连接的RC滤波器。图8A在接收到被示出为IN的输入脉冲之后，通过示出作为时间的函数的来自相应RC滤波器的Vout来示出比较瞬态性能。与示出为“现有技术”的传统RC滤波器相比，可以看到所公开的RC滤波器具有更快的瞬态性能。
图8B示出了归一化的信号幅度与频率的曲线图。从图8B所示的模拟结果可以看出，与示出为“现有技术”的传统RC滤波器相比，所公开的RC滤波器的频率在100MHz到几乎1GHz的范围内仅变化小于100KHz，这表明在大多数常见的RC滤波器应用中可以使用所公开的经修改的多晶硅C来用作RC滤波器。此外，如果需要，可以调节所公开的RC滤波器的等效电阻值以消除这种频率变化。
所公开的方面可以用于形成半导体管芯，所述半导体管芯可以整合到各种组装流程中以形成各种不同的装置和相关产品。半导体管芯可以包含其中的各种元件和/或其上的层，包含屏障层、电介质层、装置结构、有源元件和无源元件，所述无源元件包含源极区域、漏极区域、位线、基极、发射极、集电极、导电线、导电孔等。此外，可以从包含双极、绝缘栅双极型晶体管(IGBT)、CMOS、BiCMOS和MEMS的各种工艺中形成半导体管芯。
本公开涉及的本领域的技术人员应理解，在本发明权利要求书范围内的许多其它方面和变体是可能的，并且可以在不脱离本公开的范围的情况下对所述方面进行进一步的添加、删除、替换和修改。

Claims (17)

1.一种在集成电路IC上形成电阻器电容器RC滤波器的方法，其包括：
提供衬底，所述衬底至少具有半导体表面，其中第一介电层位于所述半导体表面上；
在所述第一介电层下方形成掺杂扩散层；
在所述第一介电层上形成图案化的掺杂多晶硅层，包含形成用于所述RC滤波器的电容器的多晶硅板；
在所述多晶硅板上形成硅化物层；
在所述硅化物层上形成第二介电层；
形成触点，所述触点包含RC滤波器的与所述硅化物层的一端接触的输入触点、所述RC滤波器的与所述硅化物层的相对端接触的输出触点，以及
形成金属层，所述金属层提供至少与所述输入触点和所述输出触点的接触。
2.根据权利要求1所述的方法，其中所述IC包含模拟电路，并且其中所述RC滤波器耦接到所述模拟电路上的输入节点或输出节点。
3.根据权利要求1所述的方法，其中所述多晶硅板是所述电容器的顶板，其中所述掺杂扩散层是所述电容器的底板，并且其中所述触点也包含接触所述掺杂扩散层的触点。
4.根据权利要求1所述的方法，其中所述多晶硅板是所述电容器的底板，所述方法进一步包括在所述多晶硅板上的所述第二介电层上形成顶部金属板，以提供所述电容器的顶板。
5.根据权利要求1所述的方法，其进一步包括在所述掺杂多晶硅层上、包含在所述多晶硅板上形成硅化物层。
6.根据权利要求1所述的方法，其进一步包括在形成所述掺杂多晶硅层之后进行源极和漏极注入以在所述半导体表面形成掺杂区域，包含在所述IC上用于金属氧化物半导体场效应晶体管MOSFET的源极和漏极，同时阻挡所述源极和漏极注入物注入所述多晶硅板。
7.根据权利要求1所述的方法，其中所述多晶硅板在形状上为矩形。
8.根据权利要求1所述的方法，其中所述RC滤波器不包含分立电阻器。
9.根据权利要求1所述的方法，其中所述多晶硅板是所述电容器的中间板，其中所述掺杂扩散层是掺杂半导体底板以提供所述电容器的底板，并且其中所述触点也包含接触所述掺杂扩散层的触点，
所述方法进一步包括在所述多晶硅板上的所述第二介电层上形成顶部金属板，以为所述电容器提供顶板，所述顶板与接触所述掺杂扩散层的所述触点接触。
10.一种至少包含电阻器电容器RC滤波器的集成电路IC，其包括：
衬底，所述衬底具有半导体表面，其中第一介电层位于所述半导体表面上；
位于所述第一介电层下方的掺杂扩散层；
位于所述第一介电层上的图案化的掺杂多晶硅层，所述图案化的掺杂多晶硅层包含所述RC滤波器的电容器的多晶硅板和金属氧化物半导体场效应晶体管MOSFET的栅极；
在所述多晶硅板上形成硅化物层；
位于所述硅化物层上的第二介电层；
触点，所述触点包含RC滤波器的与所述硅化物层的一端接触的输入触点和所述RC滤波器的与所述硅化物层的相对端接触的输出触点；
金属层，所述金属层提供至少与所述输入触点和所述输出触点的接触；以及
模拟电路，所述模拟电路包括所述MOSFET，具有耦接到所述RC滤波器的I/O节点。
11.根据权利要求10所述的IC，其中所述多晶硅板是所述电容器的顶板，其中所述掺杂扩散层是所述电容器的底板，并且其中所述触点也包含接触所述掺杂扩散层的触点。
12.根据权利要求10所述的IC，其中所述多晶硅板是所述电容器的底板，所述IC进一步包括位于所述多晶硅板上的所述第二介电层上的顶部金属板，以提供用于电容器的顶板。
13.根据权利要求10所述的IC，其进一步包括所述半导体表面中的源极和漏极扩散，所述源极和漏极扩散包含用于所述MOSFET的源极和漏极，在所述多晶硅板中包括来自所述源极和漏极扩散的掺杂物。
14.根据权利要求10所述的IC，其中所述多晶硅板在形状上为矩形。
15.根据权利要求10所述的IC，其中所述RC滤波器不包含分立电阻器。
16.根据权利要求10所述的IC，其中所述多晶硅板是所述电容器的中间板，其中所述掺杂扩散层是掺杂半导体底板以提供所述电容器的底板，并且其中所述触点也包含接触所述掺杂扩散层的触点，
所述IC进一步包括位于所述多晶硅板上的所述第二介电层上的顶部金属板，以为所述电容器提供顶板，所述顶板与接触所述掺杂扩散层的所述触点接触。
17.根据权利要求10所述的IC，其中所述模拟电路包括运算放大器。
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