CN111416581A - Temperature stabilizing circuit of radio frequency power amplifier - Google Patents
Temperature stabilizing circuit of radio frequency power amplifier Download PDFInfo
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- CN111416581A CN111416581A CN201910016679.6A CN201910016679A CN111416581A CN 111416581 A CN111416581 A CN 111416581A CN 201910016679 A CN201910016679 A CN 201910016679A CN 111416581 A CN111416581 A CN 111416581A
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- temperature
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- power amplifier
- radio frequency
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45032—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are multiple paralleled transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45151—At least one resistor being added at the input of a dif amp
Abstract
The invention relates to the technical field of radio frequency power amplifiers, in particular to a temperature stabilizing circuit of a radio frequency power amplifier, which comprises an output stage transistor array and an output stage bias circuit; the transistor base stages of the output stage transistor array are weighted to carry out series resistance in a mode of 1, 21, 22 … 2n … 22, 21, 1, and the output stage transistor array is connected with the output stage bias circuit through the series resistance. Through the temperature regulating circuit, the change of linearity with temperature is effectively inhibited. The optimized design of the whole circuit structure can effectively improve the temperature control precision of a single power tube in the cascade amplifier, improve the stability of the whole amplifier, prolong the service life of devices and reduce the loss.
Description
Technical Field
The invention relates to the technical field of radio frequency power amplifiers, in particular to a temperature stabilizing circuit of a radio frequency power amplifier.
Background
In a modern wireless communication system, a radio frequency power amplifier is a key component for realizing wireless transmission of radio frequency signals, and a power control chip is an important component of a radio frequency power amplifier module. The radio frequency power amplifier chip is a core part of a power amplifier module, and has a main function of amplifying a modulated radio frequency signal to a required power value, however, due to the change of junction voltage drop of a power transistor caused by temperature change, the output power of the radio frequency power amplifier is greatly influenced by the temperature, so that the output power of the power amplifier is greatly changed at different temperatures, and the difficulty and the complexity of power control are increased.
The radio frequency power amplifier generally employs a Heterojunction Bipolar Transistor (HBT), a complementary metal oxide semiconductor transistor (CMOS), a High Electron Mobility Transistor (HEMT), or the like as an amplifying transistor, which is referred to as a power transistor. The power tube needs a certain dc voltage and/or dc current during operation, which is called biasing. If the bias circuit provides direct current voltage for the power tube, the method is called voltage bias mode. If the bias circuit provides direct current for the power tube, the method is called current bias mode. Most of the existing radio frequency power amplifiers adopt voltage bias, however, new performance requirements are provided for the radio frequency power amplifiers by new generation communication standards such as 4G, 5G and the like, and the radio frequency power amplifiers in the traditional voltage bias mode cannot meet the new performance requirements, so that the radio frequency power amplifiers in the current bias mode are paid attention to. One important problem to be solved by the current bias type rf power amplifier is temperature compensation.
In a temperature control circuit based on a power amplifier, a temperature compensation circuit is commonly used to reduce the influence of temperature on the circuit. The first temperature compensation method for the radio frequency power amplifier is characterized in that a power control circuit collects temperature information T of the radio frequency power amplifier, the temperature information T is converted into temperature compensation quantity through a temperature compensation function f (T), a control signal Vramp is converted into control VCCO (Veamp) by the control circuit and then is superposed with the temperature compensation quantity f (T) to obtain a final power control signal VCC which is VCCO (Vramp) + f (T), and the control circuit transmits the final power control signal VCC to the power amplifier to control the output power of the power amplifier. The second is to perform temperature compensation on the constant bias current, or to convert the constant bias voltage into current and perform temperature compensation, and then to provide the temperature-compensated bias current for the base of the power tube.
The current temperature compensation circuit is widely concerned, and a general temperature compensation circuit performs temperature compensation on a constant bias current or converts a constant bias voltage into a current to perform temperature compensation, and then provides the temperature compensated bias current for the base of the power tube. However, this temperature adjustment method is only temperature compensation for all transistors, and in a complex multi-stage amplifier, because many transistors are needed, and after the transistors are arranged in sequence, the temperature of different transistors in a power amplifier of a certain stage is different due to thermal effect. If the temperature compensation circuit is used alone, the temperature change of the power amplifier can be controlled only integrally, short plate effect is caused, accuracy is not high, and waste is caused.
This paper has provided a neotype temperature regulation circuit on traditional temperature regulation circuit carries out the basis of assay, directly controls the resistance of single transistor to accurate effectual thermal effect of avoiding is to power amplifier's influence, and the output that reduces the temperature change and lead to changes, improves stability, solves reliability problems such as overheated burnout.
Disclosure of Invention
Aiming at the defects of the prior art, the invention discloses a temperature stabilizing circuit of a radio frequency power amplifier, which directly controls the resistance value of a single transistor, thereby accurately and effectively avoiding the influence of thermal effect on the power amplifier, reducing the influence of temperature on linearity, reducing the output power change caused by temperature change, improving stability, and solving the reliability problems of overheating and burnout and the like.
The invention is realized by the following technical scheme:
a temperature stabilizing circuit of a radio frequency power amplifier comprises an output stage transistor array and an output stage bias circuit; the method is characterized in that: the transistor base stages of the output stage transistor array are weighted in a mode of 1, 21, 22 … 2n … 22, 21, 1 to carry out series resistance, and the output stage transistor array is connected with the output stage bias circuit through the series resistance.
Preferably, the transistor increases the direct current negative feedback of the transistor through the resistor connected in series with the base stage, reduces the current of the transistor, and delays the Kirk effect.
Preferably, the resistance value of the series resistor is determined by using a combination of circuit simulation and thermal simulation.
Preferably, the temperature control circuit of the temperature stabilization circuit controls the temperature variation of the transistor through the temperature and power supply voltage compensation circuit.
Preferably, the mode of the transistor base-stage series resistance of the output-stage transistor array can be determined by the thermal effect on the transistors and the arrangement positions of the transistors.
The invention has the beneficial effects that:
1. the influence caused by the temperature change of the transistor is controlled by introducing a temperature and power supply voltage compensation circuit. The characteristic of the connection between the bias circuit and the transistor is directly utilized, different resistance values are set at the position where the bias circuit is connected with the transistor, different combinations are carried out by using resistors R with different values, and the bias current of the transistor is influenced or the bias voltage is influenced by using the different combinations to change the bias current.
2. The circuit directly controls a specific transistor according to the temperature change caused by different transistor arrangement positions and the heat effect of the transistor, and has high precision and high stability.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a graph of the distributed thermal effect of the present invention;
FIG. 2 is a temperature control circuit diagram of the present invention;
FIG. 3 is a diagram of an output stage transistor array of a conventional RF power amplifier of the present invention;
FIG. 4 is a schematic diagram of an output stage bias circuit of a conventional RF power amplifier of the present invention;
FIG. 5 is a schematic diagram of a power amplifier temperature control circuit of the present invention;
fig. 6 is a diagram of a specific implementation form of the temperature control circuit of the power amplifier of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Aiming at the condition that the temperatures of the parallel output devices are different, a temperature control circuit based on a radio frequency power amplifier is provided. First we introduce a classical solution: a temperature compensation circuit. The classical method is to perform temperature compensation on a constant bias current, or to convert a constant bias voltage into a current and perform temperature compensation on the current, and then to provide the temperature-compensated bias current for the base of the power tube. However, this method is only for the case where M is 1, and if M is greater than 5, the temperature change of the power amplifier can only be controlled as a whole in consideration of the above-mentioned distributed thermal effect, which causes short-board effect, low accuracy and waste.
Therefore, a ballast resistor network (ballasting resistor network) is provided, that is, different transistors are connected to different resistances (as shown in fig. 2), and the resistances are changed in a gradient manner along with the temperature, so that the change of the temperature can be accurately controlled, the linearity change caused by the temperature change is reduced, the stability is improved, and the unreliable problems such as overheating and burnout are prevented. Compared with the prior art, the invention considers the temperature change of each transistor, provides a solution, can accurately obtain a single transistor, avoids unnecessary waste, can reduce the influence of temperature on the linearity, has a good compromise between efficiency and linearity, improves stability, and prevents the unreliable problems of overheating and burnout and the like.
The radio frequency power amplifier chip is the core part of the power amplifier module, and the main function of the chip is to amplify the modulated radio frequency signal to the required power value. When the power amplifier is in normal operation, a large output power is generated, causing the transistor to heat up. The heating of the transistor will further cause the current to increase, and the current will increase, and it is known that the power will further increase, which will fall into a vicious circle, the temperature will increase, the power will increase, the temperature will increase again, and finally the transistor will overheat and burn out the power amplifier.
In order to output a relatively high power value, a plurality of parallel output devices (M) are required for the multistage power amplifier. The number of parallel output devices is the number of transistors required by the one-stage power amplifier, and the temperatures of the parallel output devices are different. As shown in fig. 1, the transistor at the center is at a higher temperature than the transistors at the sides. This is because the transistors at the middle position generate a certain amount of radiation during operation, which affects the temperature change of the transistors at the left and right sides, in addition to the temperature increase caused by the operation of the transistors themselves, so that the temperature of the parallel output device shows a temperature change diagram with a gradient change from the middle to the highest to the two sides.
Example 2
Fig. 3 and 4 show an output stage transistor array of a conventional power amplifier, in which a plurality of transistors are arranged in parallel to combine output power. The base stage or gate is connected to a voltage or current bias circuit with compensation through the same ballast resistor. The advantage of this structure is that the layout is simple, but it is easy to cause the temperature distribution between transistors to be uneven. When the power amplifier works, the transistor reduces the opening voltage of the PN node due to heat generation, and under the fixed external bias condition, the bias current of the transistor is increased, so that the temperature of the transistor is further increased. The unstable nature of the transistor requires that it must be connected to a thermally stable resistor. The traditional thermal stability resistor introduces negative feedback at a base level, so that the thermal instability of a transistor can be effectively relieved, and the whole amplifier is kept stable. However, for the transistor array shown in fig. 3, when the power amplifier is operated, each array is affected by heat emitted from the transistors of the accessories in addition to its own heat generation. Taking the case of three transistors in parallel as an example, when the transistors are operated simultaneously, the temperature of the middle transistor is higher than that of the transistors on both sides, which results in a lower PN junction turn-on voltage of the middle transistor, and under the condition of the same external bias and thermal stability, the middle transistor will draw more current from the bias circuit, which results in a reduction in the base current of the other two transistors, which results in a continued expansion of the temperature difference between the three transistors. The net effect of this positive feedback is that the intermediate transistor conduction current dominates the overall circuit current, prematurely exhibiting the Kirk effect, while the other two transistors are low current. The performance of the entire power amplifier is significantly deteriorated.
In order to effectively solve this problem and improve the overall performance of the power amplifier, a temperature control circuit based on each transistor is proposed.
As shown in fig. 5, the self-heating effect of the transistor 2 is more pronounced due to the greater temperature of the transistor in the intermediate position. At this time, more resistors are connected in series in the base stage of the transistor, and the direct current negative feedback of the transistor 2 is increased, so that the current of the transistor 2 cannot be larger due to the fact that the temperature is hotter, and the Kirk effect is prevented from being displayed earlier due to the fact that the current is too large. The performance of all transistors is more balanced, so that no waste of current and no deterioration of the power amplifier performance occurs. In a specific circuit implementation, the number of the base series resistors may be weighted in a manner of 1, 21, 22 … 2n … 22, 21, 1, for example, the base series resistor of the transistor 1 is 1, the base series resistor of the transistor 2 is 2, and the base series resistor of the transistor 3 is 1. Fig. 6 is a specific implementation.
Example 3
The circuit shown in fig. 6 is a specific implementation of the temperature control circuit of the power amplifier. If a conventional temperature control circuit is used, the current flowing through the middle transistor is likely to be much larger than that flowing through the transistors on both sides, and in a special case, 90% of all the current may flow through the middle transistor, which itself causes gain reduction due to base widening, and the performance of the power amplifier is obviously deteriorated. With the temperature control circuit structure provided by the invention, the problem can be effectively avoided, the current of the power amplifier flows through five transistors more uniformly, and the performance of each transistor cannot be deteriorated in advance.
The specific loading manner of the resistor depends on the specific situation, and does not necessarily follow the manner of 1, 21, 22 … 2n … 22, 21, 1. Since the temperature of a transistor is related to its own emission, the thermal conduction of neighboring transistors. And the thermal conduction of adjacent transistors is dependent on the size of the transistors and the distance between the transistors. Under the condition that the transistors generate heat greatly and the adjacent transistors are in close proximity, the resistance in series near the base of the middle transistor should be larger to control the temperature of the middle transistor. Correspondingly, if the situation is reversed, the resistance value of the series connection can also be correspondingly reduced. It is a reasonable solution to combine circuit simulation and thermal simulation to determine the resistance of the base-level series of each transistor.
The invention provides a novel high-precision temperature regulating circuit with a simple structure. Firstly, the method comprises the following steps: the influence caused by the temperature change of the transistor is controlled by introducing a temperature and power supply voltage compensation circuit. The characteristic of the connection between the bias circuit and the transistor is directly utilized, different resistance values are set at the position where the bias circuit is connected with the transistor, different combinations are carried out by using resistors R with different values, and the bias current of the transistor is influenced or the bias voltage is influenced by using the different combinations to change the bias current. Secondly, the method comprises the following steps: the circuit directly controls a specific transistor according to the temperature change caused by different transistor heat effects and transistor arrangement positions, has high precision and high stability
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (5)
1. A temperature stabilizing circuit of a radio frequency power amplifier comprises an output stage transistor array and an output stage bias circuit; the method is characterized in that: the transistor base of the output stage transistor array is in accordance with 1, 21，22…2n…22，21And 1, the series resistor is weighted, and the output stage transistor array is connected with the output stage bias circuit through the series resistor.
2. The temperature stabilization circuit of a radio frequency power amplifier according to claim 1, wherein: the transistor increases the direct current negative feedback of the transistor through the resistor connected in series with the base stage, reduces the current of the transistor and delays to display the Kirk effect.
3. The temperature stabilization circuit of a radio frequency power amplifier according to claim 1, wherein: the resistance value of the series resistor is determined by combining circuit simulation and thermal simulation.
4. The temperature stabilization circuit of a radio frequency power amplifier according to claim 1, wherein: the temperature control circuit of the temperature stabilizing circuit controls the temperature change of the transistor through the temperature and power supply voltage compensation circuit.
5. The temperature stabilization circuit of a radio frequency power amplifier according to claim 1, wherein: the mode of the transistor base stage series resistance of the output stage transistor array can be determined by the heat effect on the transistors and the arrangement positions of the transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910016679.6A CN111416581A (en) | 2019-01-08 | 2019-01-08 | Temperature stabilizing circuit of radio frequency power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910016679.6A CN111416581A (en) | 2019-01-08 | 2019-01-08 | Temperature stabilizing circuit of radio frequency power amplifier |
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| CN111416581A true CN111416581A (en) | 2020-07-14 |
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| CN201910016679.6A Pending CN111416581A (en) | 2019-01-08 | 2019-01-08 | Temperature stabilizing circuit of radio frequency power amplifier |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1937410A (en) * | 2006-08-17 | 2007-03-28 | 复旦大学 | Adaptive process and temperature compensated high frequency ring-oscillating phase-locking ring circuit |
| CN101036227A (en) * | 2004-10-08 | 2007-09-12 | 皇家飞利浦电子股份有限公司 | Array of capacitors switched by MOS transistors |
| CN102111113A (en) * | 2009-12-28 | 2011-06-29 | 中国科学院微电子研究所 | Serially concatenated multi-level radio-frequency power amplifier and front-end transmitter |
-
2019
- 2019-01-08 CN CN201910016679.6A patent/CN111416581A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101036227A (en) * | 2004-10-08 | 2007-09-12 | 皇家飞利浦电子股份有限公司 | Array of capacitors switched by MOS transistors |
| CN1937410A (en) * | 2006-08-17 | 2007-03-28 | 复旦大学 | Adaptive process and temperature compensated high frequency ring-oscillating phase-locking ring circuit |
| CN102111113A (en) * | 2009-12-28 | 2011-06-29 | 中国科学院微电子研究所 | Serially concatenated multi-level radio-frequency power amplifier and front-end transmitter |
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