CN111416278B - Epitaxial wafer and semiconductor laser - Google Patents
Epitaxial wafer and semiconductor laser Download PDFInfo
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- CN111416278B CN111416278B CN201910009078.2A CN201910009078A CN111416278B CN 111416278 B CN111416278 B CN 111416278B CN 201910009078 A CN201910009078 A CN 201910009078A CN 111416278 B CN111416278 B CN 111416278B
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
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Abstract
The invention relates to the technical field of semiconductors, and discloses an epitaxial wafer and a semiconductor laser. The epitaxial wafer comprises: a substrate; a functional layer located on the substrate; wherein at least part of the functional layer is doped with Mg; the light-emitting layer is positioned in the functional layer, and the functional layer is used for driving the light-emitting layer to emit light. By the mode, the characteristic temperature of the laser applying the epitaxial wafer can be improved, and the electro-optical conversion efficiency of the laser is further improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer and a semiconductor laser.
Background
AlGaInP quaternary compound materials are widely applied to high-brightness red light emitting diodes and semiconductor lasers, and have become main materials of red light emitting devices. However, the AlGaInP material system itself has disadvantages compared to the AlGaAs materials used earlier: the conduction band step of AlGaInP/GaInP heterojunction is very small, the maximum value is about 270meV and is smaller than 350meV of AlGaAs material, so that the electron barrier is relatively low, leakage current is easy to form, and the threshold current of the laser is increased, especially in high-temperature and high-current operation. And the thermal resistance of the AlGaInP material is far higher than that of the AlGaAs material due to alloy scattering, so that more heat is generated in the working process, and junction temperature and cavity surface temperature are easy to be overhigh. Meanwhile, the effective mass and the state density of carriers of the AlGaInP material are higher than those of AlGaAs material, and higher transparent current density is needed during the lasing. The reason is that the characteristic temperature of the laser using the AlGaInP material system is low, and the electro-optic conversion efficiency is low in continuous operation.
Disclosure of Invention
In view of the above, the present invention mainly solves the technical problem of providing an epitaxial wafer and a semiconductor laser, which can increase the characteristic temperature of the laser applying the epitaxial wafer of the present invention, thereby improving the electro-optical conversion efficiency thereof.
In order to solve the technical problems, the invention adopts a technical scheme that: there is provided an epitaxial wafer including: a substrate; a functional layer located on the substrate; wherein at least part of the functional layer is doped with Mg; the light-emitting layer is positioned in the functional layer, and the functional layer is used for driving the light-emitting layer to emit light.
In an embodiment of the present invention, the functional layer includes a first functional layer and a second functional layer, and the first functional layer, the light emitting layer, and the second functional layer are sequentially stacked on the substrate in a direction close to the substrate.
In an embodiment of the invention, the first functional layer comprises a first waveguide layer and a first confinement layer, the first waveguide layer is located on a side of the light emitting layer remote from the second functional layer, the first confinement layer is located on a side of the first waveguide layer remote from the light emitting layer, and the first waveguide layer and the first confinement layer are doped with Mg.
In an embodiment of the invention, the Mg concentration in the first waveguide layer is less than the Mg concentration in the first confinement layer.
In an embodiment of the invention, the first confinement layer includes a first sub-confinement layer and a second sub-confinement layer, the first sub-confinement layer is located at a side of the first waveguide layer away from the light emitting layer, and the second sub-confinement layer is located at a side of the first sub-confinement layer away from the first waveguide layer; wherein the first sub-confinement layer is doped with Mg and the second sub-confinement layer is doped with Zn.
In an embodiment of the invention, the first confinement layer further comprises a barrier layer located between the first sub-confinement layer and the second sub-confinement layer.
In one embodiment of the present invention, the barrier layer includes a first barrier layer doped with Mg and a second barrier layer doped with Zn, the barrier layer being a superlattice structure in which at least one first barrier layer and at least one second barrier layer are alternately laminated and paired.
In an embodiment of the invention, the first functional layer further includes a contact layer, the contact layer is located at a side of the second sub-limiting layer away from the first sub-limiting layer, a transition layer is disposed between the contact layer and the second sub-limiting layer, and the barrier layer and the transition layer are used for increasing a distance between the contact layer and the light emitting layer; wherein the contact layer is doped with Zn.
In one embodiment of the invention, the barrier layer is composed of undoped AlGaInP material.
In an embodiment of the present invention, the first functional layer is an N-type semiconductor layer, and the second functional layer is a P-type semiconductor layer; or the first functional layer is a P-type semiconductor layer, and the second functional layer is an N-type semiconductor layer.
In order to solve the technical problems, the invention adopts another technical scheme that: there is provided a semiconductor laser comprising an epitaxial wafer as set forth in the above embodiments.
The beneficial effects of the invention are as follows: in contrast to the prior art, the present invention provides an epitaxial wafer comprising a substrate and a functional layer on the substrate. The epitaxial wafer also comprises a light-emitting layer, wherein the light-emitting layer is positioned in the functional layer, and the functional layer is used for driving the light-emitting layer to emit light. At least part of the functional layer is doped with Mg to improve the quasi-Fermi level position of the at least part of the functional layer, so that the effective potential barrier for blocking current leakage is improved, and therefore, the characteristic temperature of a laser applying the epitaxial wafer can be improved, and the electro-optical conversion efficiency of the laser is improved.
Drawings
FIG. 1 is a schematic diagram of an embodiment of an epitaxial wafer of the present invention;
FIG. 2 is a schematic diagram of the conduction band structure of the epitaxial wafer of FIG. 1;
FIG. 3 is a schematic view of another embodiment of an epitaxial wafer of the present invention;
FIG. 4 is a schematic diagram of the conduction band structure of the epitaxial wafer of FIG. 3;
FIG. 5 is a schematic view of an embodiment of a first confinement layer according to the present invention;
FIG. 6 is a schematic view of the structure of an embodiment of a barrier layer of the present invention;
FIG. 7 is a schematic diagram of one embodiment of a conduction band structure of an epitaxial wafer according to the present invention;
fig. 8 is a schematic structural view of an embodiment of the semiconductor laser of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
In order to solve the technical problems of low characteristic temperature and low electro-optical conversion efficiency of the laser in the prior art, an embodiment of the present invention provides an epitaxial wafer, which includes: a substrate; a functional layer located on the substrate; wherein at least part of the functional layer is doped with Mg; the light-emitting layer is positioned in the functional layer, and the functional layer is used for driving the light-emitting layer to emit light.
The details are set forth below.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an epitaxial wafer according to an embodiment of the present invention.
In an embodiment, the epitaxial wafer comprises a substrate 1 and a functional layer 2 on the substrate 1, and the epitaxial wafer further comprises a light-emitting layer 3, wherein the light-emitting layer 3 is located in the functional layer 2, and the functional layer 2 is used for driving the light-emitting layer 3 to emit light so as to meet the use requirement. For example, an epitaxial wafer is used in a laser, and the light emitting layer 3 is used to generate enough light gain and emit light to achieve the laser emission wavelength required by the laser output.
At least part of the functional layer 2 of the epitaxial wafer is doped with Mg so as to improve the quasi-Fermi level position of the at least part of the functional layer, thereby improving the effective potential barrier for blocking current leakage, reducing current leakage, further improving the electro-optical conversion efficiency and reducing heat generation.
In an embodiment, the functional layer 2 comprises a first functional layer 21 and a second functional layer 22. The first functional layer 21, the light emitting layer 3 and the second functional layer 22 are sequentially laminated on the substrate 1 in a direction approaching the substrate 1, that is, the second functional layer 22 is located on the substrate 1, the light emitting layer 3 is located on the second functional layer 22, and the first functional layer 21 is located on the light emitting layer 3.
Further, the first functional layer 21 includes a first waveguide layer 211 and a first confinement layer 212. The first waveguide layer 211 is located at a side of the light emitting layer 3 remote from the second functional layer 22, the first confinement layer 212 is located at a side of the first waveguide layer 211 remote from the light emitting layer 3, and the first waveguide layer 211 and the first confinement layer 212 are doped with Mg for increasing quasi-fermi level positions of the first waveguide layer 211 and the first confinement layer 212, thereby increasing an effective barrier against current leakage.
The Mg concentration doped in the first waveguide layer 211 is smaller than the Mg concentration in the first confinement layer 212. The inventors have found that the Mg concentration doped in the first waveguide layer 211 and the first confinement layer 212 is set so as to maximize the effective barrier of the first waveguide layer 211 and the first confinement layer 212, thereby minimizing leakage current. In addition, the highly doped first confinement layer 212 can further improve the conductivity of the material, reduce the series resistance of the laser, improve the electro-optical conversion efficiency of the laser, and reduce the heat generation.
Further, the second functional layer 22 includes a second waveguide layer 221 and a second confinement layer 222. The second waveguide layer 221 is located at a side of the light emitting layer 3 away from the first functional layer 21, and the second confinement layer 222 is located at a side of the second waveguide layer 221 away from the light emitting layer 3. Wherein the second confinement layer 222 is located on the substrate 1.
The first waveguide layer 211 and the second waveguide layer 221 are used to transport electrons or holes to the light emitting layer 3, the electrons and holes meet and pair at the light emitting layer 3, and the bonded electrons and holes release energy and are absorbed by the light emitting layer 3, so that the light emitting layer 3 radiates laser light. The refractive index of the first confinement layer 212 and the second confinement layer 222 is smaller than that of the first waveguide layer 211 and the second waveguide layer 221. The laser light radiated from the light emitting layer 3 passes through the first and second waveguide layers 211 and 221, and is totally reflected at interfaces of the first and second waveguide layers 211 and 221 and the first and second confinement layers 212 and 222, so that the laser light field radiated from the light emitting layer 3 is confined in the light emitting layer 3, the first and second waveguide layers 211 and 221.
The first functional layer 21 further comprises a transition layer 213 and a contact layer 214. The transition layer 213 is located on a side of the first confinement layer 212 remote from the first waveguide layer 211, and the contact layer 214 is located on a side of the transition layer 213 remote from the first confinement layer 212. The contact layer 214 serves as a medium for connecting the epitaxial wafer to an external power supply structure or a structure functioning as a power supply for introducing an electric signal (electrons or holes) for driving the light emitting layer 3 to emit light. The transition layer 213 serves as a transition medium between the first confinement layer 212 and the contact layer 214.
It is understood that the first functional layer 21 may be an N-type semiconductor layer; correspondingly, the second functional layer 22 is a P-type semiconductor layer. Or the first functional layer 21 is a P-type semiconductor layer; correspondingly, the second functional layer 22 is an N-type semiconductor layer.
The following describes a specific structure of the epitaxial wafer by taking the first functional layer 21 as a P-type semiconductor layer and the second functional layer 22 as an N-type semiconductor layer as an example:
since the second functional layer 22 is located between the substrate 1 and the light emitting layer 3, the substrate 1 also needs to be an N-type semiconductor matched with the second functional layer 22. Specifically, the substrate 1 may be an N-type GaAs single wafer, which serves as a base of a superstructure of an epitaxial wafer.
The second confinement layer 222 of the second functional layer 22 is N-type undoped Al matched with N-type GaAs x In 1-x P, the thickness is 500-5000 nm. The second waveguide layer 221 is N-type undoped (Al y Ga 1-y ) x In 1-x P, the thickness is 50-250 nm.
A light emitting layer 3, i.e. a quantum well layer, which is Ga z In 1-z P, the thickness is 2-200 nm. The wavelength of the laser beam emitted from the light-emitting layer 3 is 620 to 670nm.
The first waveguide layer 211 of the first functional layer 21 is P-type (Al y Ga 1-y ) x In 1-x P has a thickness of 50 to 250nm. The first waveguide layer 211 is doped with Mg, wherein the doping concentration of Mg is 5×10 17 cm -3 . The first confinement layer 212 is P-type Al x In 1-x P has a thickness of 500-5000 nm. The first confinement layer 212 is doped with Mg, wherein the doping concentration of Mg is 3×10 18 cm -3 . It can be seen that the Mg concentration doped in the first waveguide layer 211 is less than the Mg concentration in the first confinement layer 212.
The transition layer 213 and the contact layer 214 correspond to the first functional layer 21, and when the first functional layer 21 is a P-type semiconductor layer, the transition layer 213 and the contact layer 214 correspond to the P-type semiconductor layer, and when the first functional layer 21 is an N-type semiconductor layer, the transition layer 213 and the contact layer 214 correspond to the N-type semiconductor layer. In the present embodiment, the transition layer 213 is P-type undoped (Al y Ga 1-y ) x In 1- x P has a thickness of 50 to 250nm. The contact layer 214 is P-type undoped GaAs with a thickness of 100-500 nm. The contact layer 214 may be doped, for example, mg, zn, etc., to improve the conductive properties of the contact layer 214.
Wherein 0< x <0.52,0< y <0.8,0.3< z <0.7 (the same applies hereinafter). The inventor finds that the AlGaInP series material adopts the element proportion, so that the functional film layer formed by the corresponding AlGaInP series material has good physical or chemical properties so as to meet the actual use requirement of an epitaxial wafer.
Fig. 2 shows the conduction band structure of the epitaxial wafer illustrated in this embodiment, wherein the a-segment represents the concentration of doped Mg in the first waveguide layer 211 and the B-segment represents the concentration of doped Mg in the first confinement layer 212. It can be seen that by doping Mg in different concentrations in the first waveguide layer 211 and the first confinement layer 212, where the Mg concentration doped in the first waveguide layer 211 is smaller than that in the first confinement layer 212, the conduction band offset of the first waveguide layer 211 and the first confinement layer 212 can be effectively improved, current leakage can be reduced, and the electro-optical conversion efficiency of the epitaxial wafer can be improved.
Referring to fig. 3, fig. 3 is a schematic structural diagram of an epitaxial wafer according to another embodiment of the present invention.
Since the activation energy (190 meV) of Mg is high, the efficiency of generating electron or hole carriers in the Mg-doped functional layer 2 portion is not high, and the effect of improving the electro-optical conversion efficiency of the epitaxial wafer by doping Mg is limited. The activation energy (100-125 meV) of Zn is smaller than that of Mg, so that the efficiency of generating electron or hole carriers in the Zn doped functional layer 2 part is higher, and the effect of improving the electro-optical conversion efficiency of the epitaxial wafer is better than that of Mg.
In view of this, the present embodiment is different from the above-described embodiment in that the first confinement layer 212 includes a first sub-confinement layer 2121 and a second sub-confinement layer 2122. The first sub-confinement layer 2121 is located at a side of the first waveguide layer 211 remote from the light-emitting layer 3, and the second sub-confinement layer 2122 is located at a side of the first sub-confinement layer 2121 remote from the first waveguide layer 211.
Since Zn has a larger diffusion coefficient in AlGaInP-based materials than Mg, it is easily diffused into the light-emitting layer 3, and light absorption occurs, so that the performance of the epitaxial wafer for irradiating laser light is adversely affected. In view of this, mg is doped in the first sub-confinement layer 2121 relatively close to the first waveguide layer 211 in the present embodiment, and Zn is doped in the second sub-confinement layer 2122 relatively far from the first waveguide layer 211. In this way, mg and Zn doping is utilized to improve the electro-optical conversion efficiency of the epitaxial wafer, and meanwhile Zn diffusion into the light-emitting layer 3 can be effectively prevented, and the performance of the light-emitting layer 3 is affected.
As described in the above embodiments, the first functional layer 21 may be an N-type semiconductor layer; correspondingly, the second functional layer 22 is a P-type semiconductor layer. Or the first functional layer 21 is a P-type semiconductor layer; correspondingly, the second functional layer 22 is an N-type semiconductor layer.
The following describes a specific structure of the epitaxial wafer by taking the first functional layer 21 as a P-type semiconductor layer and the second functional layer 22 as an N-type semiconductor layer as an example:
since the second functional layer 22 is located between the substrate 1 and the light emitting layer 3, the substrate 1 also needs to be an N-type semiconductor matched with the second functional layer 22. Specifically, the substrate 1 may be an N-type GaAs single wafer, which serves as a base of a superstructure of an epitaxial wafer.
The second confinement layer 222 of the second functional layer 22 is N-type undoped Al matched with N-type GaAs x In 1-x P, the thickness is 500-5000 nm. The second waveguide layer 221 is N-type undoped (Al y Ga 1-y ) x In 1-x P, the thickness is 50-250 nm.
A light emitting layer 3, i.e. a quantum well layer, which is Ga z In 1-z P, the thickness is 2-200 nm. The wavelength of the laser beam emitted from the light-emitting layer 3 is 620 to 670nm.
The first waveguide layer 211 of the first functional layer 21 is P-type (Al y Ga 1-y ) x In 1-x P has a thickness of 50 to 250nm. The first waveguide layer 211 is doped with Mg, wherein the doping concentration of Mg is 5×10 17 cm -3 . The first sub-confinement layer 2121 of the first confinement layer 212 is P-type Al x In 1-x P has a thickness of 10 to 500nm. The first sub-confinement layer 2121 is doped with Mg and has a doping concentration of 3×10 18 cm -3 . The second sub-limiting layer 2122 is P-type Al x In 1-x P has a thickness of 1000 to 7000nm. The second sub-limiting layer 2122 is doped with Zn and has a doping concentration of 3×10 18 cm -3 。
It should be noted that, in the present embodiment, the Mg concentration doped in the first sub-confinement layer 2121 is equal to the Zn concentration doped in the second sub-confinement layer 2122, and is equal to the Mg concentration doped in the first confinement layer 212 in the above embodiment. In order to make the atomic concentration doped in the first confinement layer 212 greater than that doped in the first waveguide layer 211, the corresponding technical effects are described in detail in the above embodiments, and will not be described herein.
The transition layer 213 and the contact layer 214 correspond to the first functional layer 21, and when the first functional layer 21 is a P-type semiconductor layer, the transition layer 213 and the contact layer 214 correspond to the P-type semiconductor layer, and when the first functional layer 21 is an N-type semiconductor layer, the transition layer 213 and the contact layer 214 correspond to the N-type semiconductor layer. In the present embodiment, the transition layer 213 is P-type undoped (Al y Ga 1-y ) x In 1- x P has a thickness of 50 to 250nm. The contact layer 214 is P-type undoped GaAs with a thickness of 100-500 nm. Of course, the contact layer 214 may also be doped, for example, mg, zn, etc., to improve the conductivity of the contact layer 214.
Fig. 4 shows the conduction band structure of the epitaxial wafer illustrated in this embodiment, wherein the a-segment represents the Mg doped concentration in the first waveguide layer 211, and the C-segment represents the Mg doped concentration in the first sub-confinement layer 2121 and the Zn doped in the second sub-confinement layer 2122. It can be seen that by doping Mg in the first sub-confinement layer 2121 of the first confinement layer 212 and doping Zn in the second sub-confinement layer 2122, zn is used to improve the efficiency of generating carriers in the epitaxial wafer, thereby improving the electro-optical conversion efficiency of the epitaxial wafer, and at the same time, effectively preventing Zn from diffusing into the light-emitting layer 3 and affecting the performance of the light-emitting layer 3.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a first limiting layer according to an embodiment of the invention.
In an alternative embodiment, the first confinement layer 212 also includes a barrier layer 4. The barrier layer 4 is located between the first sub-confinement layer 2121 and the second sub-confinement layer 2122 for preventing Zn in the second sub-confinement layer 2122 from diffusing into the light-emitting layer 3. Meanwhile, in the case where the contact layer 214 is doped with Zn, the barrier layer 4 can prevent Zn in the contact layer 214 from diffusing into the light emitting layer 3.
Further, the contact layer 214 of the first functional layer 21 is located at a side of the second sub-limiting layer 2122 away from the first sub-limiting layer 2121, and a transition layer 213 is disposed between the contact layer 214 and the second sub-limiting layer 2122, and the barrier layer 4 and the transition layer 213 are used for increasing a distance between the contact layer 214 and the light emitting layer 3. In the case that the contact layer 214 is doped with Zn, the distance between the contact layer 214 and the light emitting layer 3 increases, so that Zn is difficult to diffuse into the light emitting layer 3, and the influence of Zn doped in the contact layer 214 on the laser performance of the light emitting layer 3 is avoided.
Preferably, the barrier layer 4 may be made of an AlGaInP-based material, and the barrier layer 4 may be made of an undoped AlGaInP material. The inventors have found through a large number of experiments that the barrier layer 4 of AlGaInP-based material has a better effect of preventing Zn from diffusing into the light-emitting layer 3 than other materials.
Referring to fig. 6, fig. 6 is a schematic structural diagram of an embodiment of a barrier layer according to the present invention.
In an alternative embodiment, different from the above-described embodiment, is: the barrier layer 4 comprises a first barrier layer 41 and a second barrier layer 42. The first barrier layer 41 is doped with Mg and the second barrier layer 42 is doped with Zn. The barrier layer 4 has a superlattice structure in which at least one first barrier layer 41 and at least one second barrier layer 42 are alternately laminated and paired.
That is, the barrier layer 4 includes at least one first barrier layer 41 and at least one second barrier layer 42, and the first barrier layer 41 and the second barrier layer 42 are a pair, that is, the number of layers of the first barrier layer 41 and the second barrier layer 42 is equal. The barrier layer 4 also takes the form of alternately stacking the first barrier layer 41 and the second barrier layer 42, that is, the first barrier layer 41 and the second barrier layer 42 of the same pair are stacked on each other and stacked on each other with the first barrier layer 41 and the second barrier layer 42 of the other pair, and the first barrier layer 41, the second barrier layer 42, and the first barrier layer 41 … … are stacked in this order as a whole.
Further, the first barrier layer 41 is a superlattice structure of AlGaInP doped with Mg, and the second barrier layer 42 is a superlattice structure of AlGaInP doped with Zn, wherein the doping concentration of Mg or Zn is 1×10 17 ～5×10 18 cm -3 . The thickness of the first barrier layer 41 and the second barrier layer 42 are equal and 0.5 to 20nm. The barrier layer 4 includes 1 to 20 pairs of the first barrier layer 41 and the second barrier layer 42 in total. Wherein, the specific structure of the superlattice structureThe forms are within the understanding of those skilled in the art and will not be described in detail herein.
Because the diffusion coefficient of Mg or Zn in the AlGaInP material with the superlattice structure is relatively low, the AlGaInP material has relatively steep doped edges, and doped atoms diffused into the light-emitting layer 3 can be reduced, so that the influence on the performance of the light-emitting layer 3 caused by the diffusion of the doped atoms into the light-emitting layer 3 is reduced. In order to further reduce the diffusion of dopant atoms, such as Zn, into the light-emitting layer 3, the first barrier layer 41 of the first layer is disposed on the first sub-confinement layer 2121, and the layers of the subsequent other barrier layers 4 are sequentially stacked on the first barrier layer 41 to increase the diffusion distance of Zn into the light-emitting layer 3, thereby reducing the diffusion of Zn into the light-emitting layer 3.
Fig. 7 shows the conduction band structure of the epitaxial wafer illustrated in this embodiment, in which the a segment represents the concentration of doped Mg in the first waveguide layer 211, and the D segment represents the superlattice structure of the pair of the first and second barrier layers 41, 42 of the barrier layer 4 to reduce the diffusion of the dopant atoms Zn. It can be seen that the present embodiment can effectively prevent the doping atoms from diffusing into the light emitting layer 3 by adding the barrier layer 4. Meanwhile, the barrier layer 4 adopts the superlattice structure of the first barrier layer 41 and the second barrier layer 42 in pairs, so that the diffusion coefficient of doping atoms in the superlattice structure is relatively low, and further, the doping atoms are prevented from diffusing into the light-emitting layer 3, so that the influence on the performance of the light-emitting layer 3 caused by the diffusion of the doping atoms into the light-emitting layer 3 is reduced.
Referring to fig. 8, fig. 8 is a schematic structural diagram of a semiconductor laser according to an embodiment of the invention.
In one embodiment, the semiconductor laser 5 includes an epitaxial wafer 51, and the epitaxial wafer 51 is stimulated to radiate laser light to perform a function of outputting laser light by the semiconductor laser 5. The specific structural form of the epitaxial wafer 51 is described in detail in the above embodiments, and will not be described herein.
The foregoing description is only of embodiments of the present invention, and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes using the descriptions and the drawings of the present invention or directly or indirectly applied to other related technical fields are included in the scope of the present invention.
Claims (8)
1. An epitaxial wafer, characterized in that the epitaxial wafer comprises:
a substrate;
a functional layer on the substrate; wherein at least part of the functional layer is doped with Mg;
the light-emitting layer is positioned in the functional layer and is used for driving the light-emitting layer to emit light;
the light-emitting device comprises a substrate, a light-emitting layer, a functional layer, a first functional layer, a second functional layer, a first functional layer and a second functional layer, wherein the functional layer comprises a first functional layer and a second functional layer, the second functional layer is positioned on the substrate, the light-emitting layer is positioned on the second functional layer, and the first functional layer is positioned on the light-emitting layer;
the first functional layer comprises a first waveguide layer and a first limiting layer, the first waveguide layer is located on one side, far away from the second functional layer, of the light-emitting layer, the first limiting layer is located on one side, far away from the light-emitting layer, of the first waveguide layer, the first waveguide layer and the first limiting layer are doped with Mg, and the concentration of Mg in the first waveguide layer is smaller than that in the first limiting layer.
2. The epitaxial wafer of claim 1, wherein the first confinement layer comprises a first sub-confinement layer and a second sub-confinement layer, the first sub-confinement layer being located on a side of the first waveguide layer remote from the light-emitting layer, the second sub-confinement layer being located on a side of the first sub-confinement layer remote from the first waveguide layer; wherein the first sub-confinement layer is doped with Mg and the second sub-confinement layer is doped with Zn.
3. The epitaxial wafer of claim 2, wherein the first confinement layer further comprises a barrier layer between the first sub-confinement layer and the second sub-confinement layer.
4. An epitaxial wafer according to claim 3 wherein said barrier layer comprises a first barrier layer doped with Mg and a second barrier layer doped with Zn, said barrier layers being of a superlattice structure in which at least one of said first barrier layer and at least one of said second barrier layer are alternately laminated and paired.
5. The epitaxial wafer of claim 3, wherein the first functional layer further comprises a contact layer, the contact layer being located on a side of the second sub-confinement layer remote from the first sub-confinement layer, a transition layer being disposed between the contact layer and the second sub-confinement layer, the barrier layer and the transition layer being configured to increase a distance between the contact layer and the light-emitting layer; wherein the contact layer is doped with Zn.
6. An epitaxial wafer according to claim 3 wherein said barrier layer is comprised of undoped AlGaInP material.
7. The epitaxial wafer of any one of claims 2 to 6, wherein the first functional layer is an N-type semiconductor layer and the second functional layer is a P-type semiconductor layer; or the first functional layer is a P-type semiconductor layer, and the second functional layer is an N-type semiconductor layer.
8. A semiconductor laser, characterized in that the semiconductor laser comprises an epitaxial wafer according to any one of claims 1 to 7.
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| KR100377792B1 (en) * | 1995-09-26 | 2003-06-11 | 삼성전자주식회사 | semiconductor laser diode and manufasturing method thereof |
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