CN111415854B - Control method and control device for semiconductor process - Google Patents
Control method and control device for semiconductor process Download PDFInfo
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- CN111415854B CN111415854B CN201910008569.5A CN201910008569A CN111415854B CN 111415854 B CN111415854 B CN 111415854B CN 201910008569 A CN201910008569 A CN 201910008569A CN 111415854 B CN111415854 B CN 111415854B
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- 238000000034 method Methods 0.000 title claims abstract description 99
- 230000008569 process Effects 0.000 title claims abstract description 78
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 230000003595 spectral effect Effects 0.000 claims description 17
- 238000005070 sampling Methods 0.000 claims description 14
- 230000005684 electric field Effects 0.000 claims description 12
- 230000005284 excitation Effects 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000004364 calculation method Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 description 78
- 238000005530 etching Methods 0.000 description 14
- 239000000460 chlorine Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 239000000376 reactant Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32981—Gas analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a control method and a control device of a semiconductor process, wherein the control method comprises the following steps: s1, acquiring parameter values related to plasma components in real time in the process of a semiconductor process; s2, adjusting the height of the coil according to the corresponding relation between the parameter value related to the plasma component and the height of the coil so as to adjust the parameter value related to the plasma component to a first target value meeting the requirement of the semiconductor process. Compared with the prior art that only various process parameters can be adjusted and the heights of the coils are not adjustable, the control method and the control device for the semiconductor process provided by the invention have the advantages that the plasma components are adjusted by utilizing the corresponding relation between the parameter values related to the plasma components and the heights of the coils, the process debugging means is increased, the window range of the process is enlarged, and therefore, the diversified process requirements can be met.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing, and in particular, to a method and apparatus for controlling a semiconductor process.
Background
Currently, plasmas are widely used in semiconductor processes to achieve etching of materials on substrates or deposition of film layers on substrates. With the continuous development of the semiconductor manufacturing field, the etched materials on the substrate have been developed into gallium arsenide, indium phosphide, indium antimonide, silicon carbide and other compounds from single elements such as silicon and germanium. The mechanism of etching varies from material to material, as does the desired plasma composition.
As shown in fig. 1, the plasma chamber generally consists of an upper electrode system (rf power supply 11, matcher 12, coil 13), a lower electrode 15, chamber components (view port 16, cavity 18, dielectric port 19) and endpoint detection system 17. Once the hardware such as coil 13 is installed, its shape, installation location, connection mode, etc. are unique and fixed. In the process, after the exciting power supply 11 loads power to the coil 13 through the matcher 12, the reactive gas in the cavity is excited into plasma 14, the plasma 14 generates glow discharge phenomenon, the end point detection system 17 collects glow through the cavity window 16, and relevant data are processed in real time by means of a corresponding control algorithm, so that accurate grasping of the process state is completed.
Typically, the composition of the plasma is controlled by adjusting various process parameters, such as the type of reactant gas, the flow rate, the power of the excitation power source 11, the temperature, pressure, etc. within the chamber 18. However, with the diversity of the types of etched materials, the process requirements cannot be satisfied simply by adjusting various process parameters.
Disclosure of Invention
The invention aims at least solving one of the technical problems in the prior art, and provides a control method and a control device for a semiconductor process, so as to solve the technical problem that the process requirements cannot be met only by adjusting various process parameters through software in the prior art.
In order to achieve the object of the present invention, there is provided a control method of a semiconductor process, comprising the steps of: s1, acquiring parameter values related to plasma components in real time in the process of the semiconductor technology; s2, adjusting the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height so as to adjust the parameter value related to the plasma component to a first target value meeting the semiconductor process requirement.
Preferably, the step S2 specifically includes: s21, judging whether the parameter value related to the plasma component reaches the first target value, if so, executing the step S1, and if not, executing the step S22; s22, obtaining a second target value of the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height, and adjusting the coil height from the current value to the second target value.
Preferably, the step S22 specifically includes: s221, obtaining a second target value of the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height; s222, judging whether the second target value is smaller than a preset target maximum value, and if so, adjusting the coil height from the current value to the second target value; if not, sending out alarm information.
Preferably, in the step S222, the target maximum value satisfies the following formula: d, d max ＝εS(L*f 2 ) Wherein d max Is the target maximum value; epsilon is the dielectric constant of air; s is the orthographic projection area of the coil arranged above the dielectric window on the horizontal section of the dielectric window; l is the inductance of the coil; f is the frequency of the excitation power supply.
Preferably, the parameter value related to the plasma component includes the spectral intensity of the plasma.
The invention provides a control device of a semiconductor process, which comprises a sampling unit, a processing unit and an execution unit, wherein the sampling unit is used for collecting parameter values related to plasma components in real time during the semiconductor process and sending the parameter values related to the plasma components to the processing unit; the processing unit is used for controlling the execution unit to adjust the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height so as to adjust the parameter value related to the plasma component to a first target value meeting the semiconductor process requirement.
Preferably, the processing unit further includes a judging module and a processing module, where the judging module is configured to receive the parameter value related to the plasma component sent by the sampling unit, and judge whether the parameter value related to the plasma component reaches the first target value, and if yes, continue to receive the parameter value related to the plasma component sent by the sampling unit; if not, a first signal is sent to the processing module; the processing module is used for obtaining a second target value of the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height when the first signal is received, and sending a second signal to the execution unit according to the second target value; the execution unit adjusts the coil height from a current value to the second target value according to the second signal.
Preferably, the processing module includes a calculating sub-module, a judging sub-module and an alarming sub-module, where the calculating sub-module is configured to obtain, when receiving the first signal, a second target value of the coil height according to a corresponding relationship between the parameter value related to the plasma component and the coil height, and send the second target value to the judging sub-module; the judging submodule is used for judging whether the second target value is smaller than a preset target maximum value or not, and if so, sending the second signal to the execution unit; if not, a third signal is sent to the alarm submodule; and the alarm sub-module is used for sending alarm information when receiving the third signal.
Preferably, the execution unit comprises a bracket, a connecting strip, a lifting rod and a driver; the coil is fixed on the lower side of the bracket and is electrically connected with the output end of the matcher through the connecting strip; the two ends of the lifting rod are respectively connected with the bracket and the driver; the driver is used for driving the bracket to do lifting motion.
Preferably, the execution unit further comprises a first shielding plate, and the first shielding plate is arranged on the upper side of the bracket; the matcher and the driver are positioned on the upper side of the first shielding plate, and the connecting strip and the lifting rod are arranged on the first shielding plate in a penetrating manner; the first shielding plate is used for reducing the influence of an electric field between the connecting strip and the driver which are positioned on the upper side of the first shielding plate and the coil which is positioned on the lower side of the first shielding plate.
Preferably, the execution unit further includes a second shielding plate disposed around the connection bar and between the connection bar and the driver to reduce an influence of an electric field between the connection bar and the driver.
The invention has the following beneficial effects:
according to the control method and the control device for the semiconductor process, the parameter values related to the plasma components are collected in real time in the process of the semiconductor process, and the coil heights are adjusted according to the corresponding relation between the parameter values related to the plasma components and the coil heights so as to adjust the parameter values related to the plasma components to the first target value meeting the requirements of the semiconductor process. The control method and the control device adjust the plasma component by utilizing the corresponding relation between the parameter value related to the plasma component and the coil height, thereby increasing the means of process debugging and expanding the window range of the process, and further meeting the diversified process requirements. Meanwhile, the control method and the control device realize the closed-loop control of the plasma components by collecting the parameter values related to the plasma components in real time and adjusting the heights of the coils in the process of the semiconductor process, so that the control method and the control device not only can adapt to the process environment change generated in the process, but also do not need repeated debugging, thereby reducing the process complexity and the labor and equipment cost.
Drawings
FIG. 1 is a schematic diagram of a prior art plasma chamber;
FIG. 2 is a flow chart of a method for controlling a semiconductor process according to the present invention;
FIG. 3 is a graph showing the correspondence between the spectral intensity and the coil height in an embodiment of the present invention;
FIG. 4 is a block diagram of a control apparatus for a semiconductor process according to the present invention;
fig. 5 is a schematic view of a plasma chamber structure according to the present invention.
Detailed Description
In order to enable those skilled in the art to better understand the technical scheme of the present invention, the following describes in detail the control method and the control device of the semiconductor process provided by the present invention with reference to the accompanying drawings.
Referring to fig. 2, in the control method of the semiconductor process provided by the present invention, first, in step S1, parameter values related to plasma components during the semiconductor process are collected in real time. Then, in step S2, the coil height is adjusted in real time according to the correspondence between the parameter value related to the plasma component and the coil height, so as to adjust the parameter value related to the plasma component to a first target value satisfying the requirement of the semiconductor process. Compared with the prior art that each technological parameter can be regulated only through software and the height of the coil is not adjustable, the control method regulates the plasma component by utilizing the corresponding relation between the parameter value related to the plasma component and the height of the coil, increases the means of technological debugging, expands the window range of the technology, and can meet diversified technological requirements. Meanwhile, the control method realizes the closed-loop control of the plasma components by collecting the parameter values related to the plasma components in real time and adjusting the heights of the coils in the process of the semiconductor process, thereby not only being suitable for the process environment change generated in the process, but also being unnecessary to carry out repeated debugging, and further being capable of reducing the process complexity, and the labor and equipment cost.
It is understood that the parameter value related to the plasma component may be the spectral intensity of the plasma, or may be other parameter values capable of reacting to the plasma component, such as the content of a physical or chemical component of an element in the plasma, the intensity of an electric field or a magnetic field generated by the plasma, and the like.
Preferably, before step S1, step S11 is further included, wherein power is loaded to the coil by using the excitation power source, and impedance matching between the excitation power source and the load thereof is completed by using the matcher, so as to ensure that the plasma state in the chamber is stable.
Preferably, step S2 specifically includes: step S21, judging whether the parameter values related to the plasma components reach the first target value, if so, returning to the step S1, and continuously collecting the parameter values related to the plasma components in real time in the semiconductor process. If not, step S22 is performed to obtain a second target value of the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height, and the coil height is adjusted from the current value to a position equal to the second target value in real time.
It will be appreciated that the coil height adjustment space is limited by the hardware conditions of the chamber. Preferably, step S22 specifically includes: step S221, obtaining a second target value of the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height; step S222, judging whether the second target value is smaller than a preset target maximum value, if so, adjusting the coil height from the current value to the second target value; if not, sending out alarm information.
In the following how to calculate the target maximum value d of the preset coil height in step S222 max A specific description will be made. For the excitation power source, a radio frequency power source is generally used, the frequency f=13.56 MHz, and f=1/(l×c) exists in the circuit with f as the resonance frequency 0.5 Wherein L is the inductance value of the coil and is determined by parameters such as the material, shape and the like of the coil; c is the distributed capacitance between the coil and the dielectric window, and can be calculated approximately by using the capacitance formula of the plate capacitance:c=εs/d, where ε is the dielectric constant of the medium (typically air) between the coil and the dielectric window, S is the orthographic projected area of the coil disposed above the dielectric window on the horizontal cross-section of the dielectric window, and d is the vertical distance between the lower surface of the coil and the upper surface of the dielectric window, i.e., the height of the coil. Maximum value d of coil height max ＝εS(L*f 2 ). In general, in order to provide a sufficient adjustment space for the height of the coil, the initial value di of the coil height is generally set to its maximum value d max Half of (a) is provided.
The method for controlling the semiconductor process according to the present invention will be described in detail below taking the plasma component-related parameter value as an example of the spectral intensity of the plasma.
Referring to FIG. 3, the Al is collected in advance 2 O 3 In the semiconductor process of etching and Si etching, the spectral intensity of chlorine (Cl) element plasma is changed along with the height of the coil. For Al 2 O 3 Etching, because it requires a high ionization rate plasma, is preset to satisfy Al 2 O 3 The first target value of the Cl element spectral intensity required for the etching process should be in the range of 50000±1000 to increase the plasma ionization rate. For Si etching, however, since a large amount of Cl radicals are required, the first target value of Cl spectral intensity, which satisfies the Si etching process requirement, should be set in advance within the range of 30000±1000 to reduce the plasma ionization rate.
The specific flow is as follows: firstly, various technological parameters (such as power, gas, air pressure, target spectrum intensity and the like) are set by software, and then the initialization of the chamber is finished (the height of the coil is the initial value d i =8 mm), power is applied to the coil using the excitation power supply, and impedance matching between the excitation power supply and its load is accomplished using the matcher. The value of the spectral intensity of the Cl element plasma is 40000.
For Al 2 O 3 Etching, because the value of the collected spectral intensity does not reach the range 50000+ -1000 of the first target value, the spectral intensity of the Cl element plasma collected in advance varies with the coil heightWhen the range of the corresponding spectral intensity is 50000.+ -. 1000, the second target value of the coil height should be 15mm, which is larger than the initial value thereof by 8mm. At Al 2 O 3 In the etching process, the driving device is controlled to lift the height of the coil, the height of the coil is adjusted to 15mm in real time, the spectrum intensity of Cl element plasma is continuously collected in real time, the spectrum intensity value collected again is 50000, and the requirement of Al is met 2 O 3 The first target value of the Cl element spectral intensity required by the etching process.
For Si etching, since the value of the collected spectral intensity does not reach the range 30000±1000 of the first target value, the second target value of the coil height should be 4mm, which is smaller than the initial value 8mm thereof, when the range of the corresponding spectral intensity is 30000±1000 is obtained from the trend chart of the spectral intensity of Cl element plasma collected in advance as a function of the coil height. In the Si etching process, the driving device is controlled to reduce the height of the coil, the height of the coil is adjusted to 4mm in real time, the spectrum intensity of the Cl element plasma is continuously collected in real time, the spectrum intensity value collected again is 30000, and the first target value of the Cl element spectrum intensity required by the Si etching process is met.
The invention also provides a control device of the semiconductor process, referring to fig. 4, the control device comprises a sampling unit, a processing unit and a control unit, wherein the sampling unit is used for collecting parameter values related to plasma components in real time in the process of the semiconductor process and sending the parameter values to the processing unit; and the processing unit is used for controlling the execution unit to adjust the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height so as to adjust the parameter value related to the plasma component to a first target value meeting the requirement of the semiconductor process. Compared with the prior art that each technological parameter can be regulated only through software and the height of the coil is not adjustable, the control device regulates the plasma component by utilizing the corresponding relation between the parameter value related to the plasma component and the height of the coil, increases the means of technological debugging, expands the window range of the technology, and can meet diversified technological requirements. Meanwhile, the control device realizes the closed-loop control of the plasma component by collecting the parameter values and adjusting the height of the coil in real time in the process of the semiconductor process, thereby not only being suitable for the process environment change generated in the process, but also being unnecessary to carry out repeated debugging, and further being capable of reducing the process complexity, the labor and the equipment cost.
It will be appreciated that the sampling unit may be an endpoint detection system and that the parameter value collected in relation to the plasma composition may be the spectral intensity of the plasma. The sampling unit may also be other sensors, and the collected parameter value related to the plasma component may also be other parameter values capable of reflecting the plasma component, such as the content of physical or chemical components in the plasma, the strength of an electric field or a magnetic field generated by the plasma, and the like. The processing unit may be a controller of the plasma chamber, or other controllers may be separately provided.
Preferably, the processing unit further comprises a judging module, which is used for receiving the parameter value related to the plasma component sent by the sampling unit, judging whether the parameter value reaches a first target value meeting the requirement of the semiconductor process, if so, continuously receiving the parameter value related to the plasma component sent by the sampling unit; if not, a first signal is sent to the processing module; the processing module is used for obtaining a second target value of the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height when the first signal is received, and sending the second signal to the execution unit according to the second target value; the execution unit adjusts the coil height from the current value to a second target value according to the second signal.
It will be appreciated that the coil height adjustment space is limited by the hardware conditions of the chamber. To avoid interference with other hardware of the chamber when adjusting the height of the coil in real time, the processing unit may further include: the calculation sub-module is used for obtaining a second target value of the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height when the first signal is received, and sending the second target value to the judgment sub-module; the judging sub-module is used for judging whether the second target value is smaller than a preset target maximum value, and if so, sending a second signal to the execution unit; if not, a third signal is sent to the alarm submodule; and the alarm sub-module is used for sending alarm information when receiving the third signal.
In the following, the execution unit for adjusting the coil height in real time in the control device of the semiconductor process provided by the invention is specifically described.
Referring to fig. 5, the plasma chamber generally consists of an upper electrode system (rf power supply 11, matcher 12, coil 13), a lower electrode 15, chamber components (view port 16, cavity 18, dielectric port 19), and endpoint detection system 17.
The execution unit comprises a bracket 22, a connecting bar 25, a connecting bar 26, a lifting rod 21 and a driver 20. The coil 13 is fixed to the lower side of the bracket 22 by a screw, and the bracket 22 is made of an insulating dielectric material, and is generally made of a material such as resin or PEAK. The coil 13 is electrically connected to the output terminal of the matching unit 12 through the connection bar 25 and the connection bar 26. The connecting strips 25 and 26 are made of metal materials, one end of the connecting strip 25 is connected with the output end of the matcher 12, and the other end is connected with the connecting strip 26, and the connecting strips are flexible metal strips, such as silver-plated copper strips with the thickness of 1 mm; the connecting bar 26 has one end connected to the connecting bar 25 and the other end connected to the input end of the coil 13, typically a cylinder of a certain stiffness and strength. Both ends of the lifting rod 21 are connected to the bracket 22 and the driver 20, respectively. The driver 20 is used for driving the bracket 22 to perform lifting motion so as to adjust the height of the coil 13 in real time. In order to ensure control accuracy, the lifting rod 21 may be processed into a screw rod, and the screw rod lifting structure and the driver 20 together form a screw rod lifting structure, and the driver 20 may use a servo motor.
Preferably, the execution unit may further include a first shielding plate 23, the first shielding plate 23 being disposed at an upper side of the bracket 22. In addition, the matcher 12 is located on the upper side of the first shielding plate 23, the connecting strip 26 penetrates through the first shielding plate 23 and is connected with the coil 13 located on the lower side of the first shielding plate 23, so that the electric field of the coil 13 located on the lower side of the first shielding plate 23 is influenced by the electric fields of the connecting strip 25 and the connecting strip 26 located on the upper side of the first shielding plate 23, and adverse effects on semiconductor processes in the cavity 18 are avoided. The driver 20 is also located on the upper side of the first shielding plate 23, and the lifting rod 21 is inserted through the first shielding plate 23 and connected with the bracket 22 located on the lower side of the first shielding plate 23, so as to reduce the influence of the electric field of the coil 13 located on the lower side of the first shielding plate 23 on the electric field of the driver 20 located on the upper side of the first shielding plate 23, thereby avoiding adverse effects on the height adjustment of the coil 13. For pressure resistance, the lifting rod 21 and the connecting strip 26 should vertically pass through the first shielding plate 23 and not contact with the first shielding plate 23, and the shortest distance between the connecting strip 26 and the first shielding plate 23 should be not less than 10mm on the plane where the first shielding plate 23 is located.
Preferably, the execution unit may further comprise a second shielding plate 24, the second shielding plate 24 being arranged around the connection bars 25, 26 and between the connection bars 25 and 26 and the driver 20, to reduce the influence of the electric field of the connection bars 25 and 26 located inside the second shielding plate 24 on the electric field of the driver 20 located outside the second shielding plate 24, thereby avoiding adverse effects on the height adjustment of the coil 13.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (8)
1. A method of controlling a semiconductor process, comprising the steps of:
s1, acquiring parameter values related to plasma components in real time in the process of the semiconductor technology;
s2, adjusting the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height so as to adjust the parameter value related to the plasma component to a first target value meeting the semiconductor process requirement;
the step S2 specifically includes:
s21, judging whether the parameter value related to the plasma component reaches the first target value, if so, executing the step S1, and if not, executing the step S22;
s22, obtaining a second target value of the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height, and adjusting the coil height from the current value to the second target value;
the step S22 specifically includes:
s222, judging whether the second target value is smaller than a preset target maximum value, and if so, adjusting the coil height from the current value to the second target value; if not, sending out alarm information;
in the step S222, the target maximum value satisfies the following formula:
d max ＝εS(L*f 2 )
wherein d max Is the target maximum value; epsilon is the dielectric constant of air; s is the orthographic projection area of the coil arranged above the dielectric window on the horizontal section of the dielectric window; l is the inductance of the coil; f is the frequency of the excitation power supply.
2. The control method according to claim 1, wherein the step S22 specifically includes:
s221, obtaining the second target value of the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height.
3. A control method according to any one of claims 1-2, characterized in that the parameter values related to the plasma composition comprise the spectral intensity of the plasma.
4. A control device of a semiconductor process is characterized by comprising a sampling unit, a processing unit and an execution unit, wherein,
the sampling unit is used for collecting parameter values related to plasma components in real time in the process of the semiconductor process and sending the parameter values related to the plasma components to the processing unit;
the processing unit is used for controlling the execution unit to adjust the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height so as to adjust the parameter value related to the plasma component to a first target value meeting the semiconductor process requirement;
the processing unit comprises a judging module and a processing module, wherein:
the judging module is used for receiving the parameter value related to the plasma component sent by the sampling unit, judging whether the parameter value related to the plasma component reaches the first target value, and if so, continuously receiving the parameter value related to the plasma component sent by the sampling unit; if not, a first signal is sent to the processing module;
the processing module is used for obtaining a second target value of the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height when the first signal is received, and sending a second signal to the execution unit according to the second target value;
the execution unit adjusts the coil height from a current value to the second target value according to the second signal;
the processing module comprises a judging sub-module and an alarming sub-module, wherein the judging sub-module is used for judging whether the second target value is smaller than a preset target maximum value or not, and if so, the second signal is sent to the executing unit; if not, a third signal is sent to the alarm submodule;
the target maximum value satisfies the following formula:
d max ＝εS(L*f 2 )
wherein d max Is the target maximum value; epsilon is the dielectric constant of air; s is the orthographic projection area of the coil arranged above the dielectric window on the horizontal section of the dielectric window; l is the inductance of the coil; f is the frequency of the excitation power supply.
5. The control device of claim 4, wherein the processing module further comprises a calculation sub-module, wherein,
the calculating submodule is used for obtaining the second target value of the coil height according to the corresponding relation between the parameter value related to the plasma component and the coil height when the first signal is received, and sending the second target value to the judging submodule;
and the alarm sub-module is used for sending alarm information when receiving the third signal.
6. The control device of claim 4, wherein the actuator unit comprises a bracket, a connecting bar, a lifting bar, and a driver; wherein,
the coil is fixed on the lower side of the bracket and is electrically connected with the output end of the matcher through the connecting strip;
the two ends of the lifting rod are respectively connected with the bracket and the driver;
the driver is used for driving the bracket to do lifting motion.
7. The control device according to claim 6, wherein the execution unit further includes a first shielding plate provided on an upper side of the bracket;
the matcher and the driver are positioned on the upper side of the first shielding plate, and the connecting strip and the lifting rod are arranged on the first shielding plate in a penetrating manner;
the first shielding plate is used for reducing the influence of an electric field between the connecting strip and the driver which are positioned on the upper side of the first shielding plate and the coil which is positioned on the lower side of the first shielding plate.
8. The control device according to claim 6 or 7, characterized in that the execution unit further comprises a second shielding plate, which is arranged around the connection bar and between the connection bar and the driver, to reduce the influence of the electric field between the connection bar and the driver.
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| US6096232A (en) * | 1996-06-14 | 2000-08-01 | Nec Corporation | Dry etching system and dry etching method using plasma |
| CN101425448A (en) * | 2007-11-01 | 2009-05-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Process control method and apparatus |
| CN103578905A (en) * | 2012-07-30 | 2014-02-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductively coupled plasma processing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6096232A (en) * | 1996-06-14 | 2000-08-01 | Nec Corporation | Dry etching system and dry etching method using plasma |
| CN101425448A (en) * | 2007-11-01 | 2009-05-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Process control method and apparatus |
| CN103578905A (en) * | 2012-07-30 | 2014-02-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductively coupled plasma processing device |
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