CN101425448A - Process control method and apparatus - Google Patents
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- CN101425448A CN101425448A CNA2007101766963A CN200710176696A CN101425448A CN 101425448 A CN101425448 A CN 101425448A CN A2007101766963 A CNA2007101766963 A CN A2007101766963A CN 200710176696 A CN200710176696 A CN 200710176696A CN 101425448 A CN101425448 A CN 101425448A
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Abstract
The invention provides a process control method which comprises the following steps: firstly, monitoring a processing/treating technology of a semiconductor and collecting the information relevant to the processing/treating conditions; and secondly, adjusting the parameter setting value relevant to the coil height according to the processing/treating information and processing/treating the semiconductor device according to the adjusted setting value. The invention also provides a process control device which comprises a sampling unit and a controlling and processing unit, wherein the sampling unit is used for sampling the information relevant to the processing/treating conditions; and the controlling and processing unit is used for adjusting the parameter setting value relevant to the coil height according to the information relevant to the processing/treating conditions so as to utilize the adjusted setting value to process/treat the semiconductor device. The process control method and the device thereof can improve the processing/treating quality to the semiconductor device and obtain the desired technological result. And meanwhile, the stability of the technological result can be ensured, and the technological cost and the risk of the production and the manufacture can be reduced.
Description
Technical field
The present invention relates to microelectronics technology, process control method and device in a kind of semiconductor machining/processing procedure.
Background technology
Along with the high speed development of electronic technology, people are more and more higher to the integrated level requirement of integrated circuit, and the processing/disposal ability of semiconductor device constantly improves in this enterprise that will seek survival the product integrated circuit.At present, extensive using plasma etching (also claiming dry etching) technology in the process of machining of semiconductor device.So-called plasma etching technology refers to, reacting gas produces the plasma that ionization forms the atom, molecule and the free radical isoreactivity particle that contain a large amount of electronics, ion, excitation state under the exciting of radio-frequency power, these active particles with (for example be etched object, various physics and chemical reaction take place and form volatile product in surface wafer), thereby the feasible object surfaces performance that is etched changes.
Especially, in submicron order even deep-submicron plasma dry etch process, along with the development of semiconductor machining/treatment technology, constantly the dwindling of critical size in processing/treatment process particularly, to the requirement of process results stability also in continuous lifting.This has good processing/handling property with regard to an urgent demand semiconductor machining/treatment facility.Thereby, require this equipment to carry out good control to process of machining.
At present, Advanced process control (APC, AdvancedProcess Control) theory has been proposed in the control field.It is means based on advanced person's control theory with computer, intelligence sensor and instrument, bus network, changes traditional Industry Control mode, thereby realizes global optimization, improves product quality and production efficiency.This theory also is applied in semiconductor machining/treatment facility gradually, promptly, can provide feedback information or feed-forward information accurately for the process of machining of entire equipment by means of existing process results, control to carry out good technology stability, and the final processing that obtains to satisfy technological requirement.
For example, just there is the radio-frequency power that adopts inductance-coupled coil to control the example of processing as control variables in the prior art.At first, obtain the corresponding relation between radio-frequency power and the processing in advance by experiment, particularly, earlier semiconductor device such as wafer are processed/handled with different radio frequency power, then, write down the corresponding relation between radio-frequency power and the processing, and this corresponding relation is stored in the database.Then, in the semiconductor machining/treatment process of reality, in database, search and this corresponding radio frequency power as a result according to the processing of semiconductor device such as wafer, then adjust the numerical value of radio-frequency power, in the hope of obtaining and the corresponding processing of this numerical value.
Although can control the processing of semiconductor device in the prior art as control variables with radio-frequency power, but in fact also can control processing, yet also not have such application in the prior art by regulating the parameter relevant with the height of inductance-coupled coil.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of process control method and device, it adopts the Advanced process control pattern, and control the result of semiconductor machining/treatment process with the parameter relevant as control variables, thereby improve processing/processing quality semiconductor device such as wafers with the height of inductance-coupled coil.
For this reason, the invention provides a kind of process control method that is used for semiconductor machining/treatment process process, comprise the steps: 1) monitoring semiconductor machining/treatment process, gather the information relevant with processing/disposition; 2), adjust the set point of the parameter relevant, and semiconductor device is processed/handled with adjusted set point with coil height according to the information relevant that collects with processing/disposition.
Wherein, before described step 1), also comprise such step, that is, obtain the parameter relevant by experiment, and it is stored in the database with the corresponding relation between the information relevant with processing/disposition with coil height.
Wherein, described step 2) specifically comprise the steps: 21) according to the information relevant that collects, obtain the suitable numerical value of the parameter relevant with coil height with processing/disposition; 22), reset the set point of the parameter relevant with coil height according to described suitable numerical value.
Wherein, described step 21) specifically comprise:, directly obtain the suitable numerical value of the parameter relevant by Query Database with coil height according to the information relevant with processing/disposition; Perhaps, obtain the suitable numerical value of the parameter relevant by calculating with coil height according to the information relevant with processing/disposition.
Wherein, the parameter relevant with coil height comprises the distance between coil height, coil and the processed semiconductor device.
Wherein, distance between described coil and the processed semiconductor device can be regulated by following manner, that is, the distance between the quartz cover of regulating winding and reaction chamber, and/or processed semiconductor device in the conditioned reaction chamber and the distance between the quartz cover.
Wherein, the described information relevant with processing/disposition comprises the feedback information of process results and/or from the information of preceding road technology.
Wherein, in process control method provided by the invention, the feedback information of described process results comprises: the critical size of processed semiconductor device, and/or residue thickness of oxide layer and distribution, and/or the figure pattern of processed/processing, and/or the thickness of deposit rete, and/or the uniformity of deposit thicknesses of layers, and/or the stress of deposit rete.
The present invention also provides a kind of process control device that is used for semiconductor machining/treatment process process, and it comprises: sampling unit is used for the information relevant with processing/disposition is sampled; Control and processing unit are used for adjusting the set point of the parameter relevant with coil height, so that utilize adjusted set point that semiconductor device is processed/handled according to the information relevant with processing/disposition that collects.
Wherein, described device also comprises memory cell, is used to store the parameter relevant with coil height with the corresponding relation between the information relevant with processing/disposition, and described corresponding relation can obtain by experiment and in advance.
Wherein, described control and processing unit comprise: enquiry module is used for according to the information relevant with processing/disposition, and inquires about described corresponding relation in memory cell, to obtain the suitable numerical value of the parameter relevant with coil height; Computing module is used for calculating the suitable numerical value of the parameter relevant with coil height according to the information relevant with processing/disposition; Module is set, is used for resetting the set point of the parameter relevant with coil height according to described suitable numerical value.
Wherein, the parameter relevant with coil height comprises the distance between coil height, coil and the processed semiconductor device.
Wherein, distance between described coil and the processed semiconductor device can be regulated by following manner, that is, the distance between the quartz cover of regulating winding and reaction chamber, and/or processed semiconductor device in the conditioned reaction chamber and the distance between the quartz cover.
Wherein, the described information relevant with processing/disposition comprises the feedback information of process results and/or from the information of preceding road technology.
Wherein, in process control device provided by the invention, the feedback information of described process results comprises: the critical size of processed semiconductor device, and/or residue thickness of oxide layer and distribution, and/or the figure pattern of processed/processing, and/or the thickness of deposit rete, and/or the uniformity of deposit thicknesses of layers, and/or the stress of deposit rete.
By technique scheme as can be seen, process control method provided by the invention and device have adopted the Advanced process control pattern, and with the parameter relevant with the height of inductance-coupled coil as control variables, with the information of importing into of the feedback information of process results or preceding road technology as controlled volume, and in semiconductor machining/treatment process, gather the information relevant with processing/disposition, then according to the information relevant that collects with processing/disposition, adjust the set point of the parameter relevant with coil height, and semiconductor device is processed/handled with adjusted set point, thereby the result of control semiconductor machining/treatment process, so that obtain the processing of expectation, and improve processing/processing quality to semiconductor device such as wafers.Simultaneously, process control method provided by the invention and device can also guarantee the stability of process results, and reduce the technology cost and risk of manufacturing.
Description of drawings
Fig. 1 is the structural representation of employed plasma etching machine in process control method provided by the invention and the device;
Fig. 2 is the schematic flow sheet of process control method provided by the present invention;
Fig. 3 is the principle schematic of process control device provided by the present invention.
Embodiment
The technological core of process control method provided by the invention and device is, adopt the Advanced process control pattern, and control the result of semiconductor machining/treatment process as control variables with the parameter relevant with the height of inductance-coupled coil, to obtain the processing of expectation, improve processing/processing quality to semiconductor device such as wafers.Wherein, relevant with the height of inductance-coupled coil parameter can comprise: the distance between the height of inductance-coupled coil self, inductance-coupled coil and the processed semiconductor device.
For making those skilled in the art person understand technical scheme of the present invention better, process control method provided by the invention and device are described in detail below in conjunction with accompanying drawing.
As the semiconductor machining/treatment facility of plasma source (for example with the coil inductance coupling mechanism, the plasma processing apparatus of plasma etching machine etc.) in, usually all has inductance-coupled coil, by means of this inductance-coupled coil process gas ionization is formed plasma, so that semiconductor device such as wafer are processed/handled.For example, Fig. 1 just shows such plasma etching machine.
See also Fig. 1, plasma etching machine has reaction chamber 3 usually, is placed with semiconductor device such as wafer 5 to be processed on the electrostatic clamping device in the reaction chamber 3.On reaction chamber 3, be provided with quartz cover 1, be provided with inductance-coupled coil 4 above the quartz cover 1, and offer the air inlet 2 of process gas in the substantial middle position of this quartz cover 1 at this.The upper/lower positions place of leaning at plasma etching machine is provided with gas outlet 6, is used for by means of molecular pump (figure does not show) gases in the reaction chamber 3 being discharged.
Adopt above-mentioned plasma etching machine that semiconductor device is added man-hour, process gas enters in the reaction chamber 3 from the air inlet 2 of quartz cover 1 central authorities, and being formed plasma by 4 ionization of the inductance-coupled coil above the quartz cover 1 at this, the plasma that is excited carries out etching or deposition materials on semiconductor device 5 to semiconductor device 5 in reaction chamber 3.In this course, there is corresponding relation between the distance of the semiconductor device 5 of inductance-coupled coil 4 in the reaction chamber 3 and the quantity of formed plasma, promptly, the distance that inductance-coupled coil 4 arrives the semiconductor device 5 in the reaction chamber 3 is big more, and then the quantity of formed plasma is just many more; The distance that inductance-coupled coil 4 arrives the semiconductor device 5 in the reaction chamber 3 is more little, and then the quantity of formed plasma is just few more.
This shows, have certain relation between the processing of semiconductor device such as parameter relevant and wafer with the height of inductance-coupled coil.Like this, just can be by controlling the processing that this parameter comes semiconductor device such as control wafer.
Particularly, process control method provided by the invention and device are exactly to be controlled volume with process results (that is, to the processing of semiconductor device such as wafer), with the parameter relevant with the height of inductance-coupled coil as control variables.Like this, just can monitor the process results that semiconductor device is processed/handled in real time, and come the parameter relevant with the height of inductance-coupled coil regulated according to the feedback information of this process results, to obtain the process results of expectation, eliminate simultaneously because the deviation of semiconductor machining/treatment facility or wafer itself changes the variation of the process results of being brought, and then realize the stability of process results.
Be principle and the process that example describes process control method provided by the invention in detail below with the etching technics.
See also Fig. 2, in step 210, preset the parameter relevant, for example, preset the height of coil and/or the distance between coil and the processed semiconductor device, and semiconductor device such as wafer are carried out etching with this preset value with the height of inductance-coupled coil.
Repeat above-mentioned steps 220 to step 250, by being automatically adjusted, the parameter relevant with the height of inductance-coupled coil realize Advanced process control, thereby this parameter is arranged on preferable numerical value, to obtain the process results of expection, can also guarantee simultaneously the stability of process results, and reduce the technology cost and risk of manufacturing.
Be example above with the plasma etch process, process control method provided by the invention is described in detail, be appreciated that, process control method provided by the invention can also be applied to other with in the processing/treatment process of coil inductance coupling mechanism as plasma source, for example, plasma enhanced CVD (PECVD, Plasma-Enhanced Chemical VaporDeposition) technology.In this technology, the process control method that is adopted combines method shown in Figure 2 with the front similar, different is, the process results feedback information in the pecvd process comprises the thickness, thickness evenness of deposit rete and such as the rete physical characteristic of stress etc., or the like.
Be similar to prior art, in the process control method provided by the invention, parameter relevant with the height of inductance-coupled coil and the corresponding relation between the process results also can obtain by experiment in advance.Particularly, the parameter relevant with the height of inductance-coupled coil is set to a certain numerical value, with this parameter numerical value semiconductor device such as wafer are processed/handled, then write down this parameter numerical value, processing and the corresponding relation between the two, and they are stored in the database.Then, in the semiconductor machining/treatment process of reality, come Query Database according to the processing of semiconductor device such as wafer, and draw the suitable numerical value of this parameter according to certain calculated with mathematical model, then adjust this parameter, in the hope of obtaining and the corresponding processing of this numerical value according to this numerical value.In fact, when above-mentioned experimental data is abundant, also can directly obtain the suitable numerical value of the parameter relevant by Query Database according to process results with the height of inductance-coupled coil.
As for how regulating the parameter relevant with the height of inductance-coupled coil, can adopt in such a way, that is, when the parameter relevant with the height of inductance-coupled coil is the height of inductance-coupled coil self, can directly regulate this height number.When the parameter relevant with the height of inductance-coupled coil be between inductance-coupled coil and the processed semiconductor device apart from the time, just can adopt following manner: first kind of mode, the invariant position that keeps the semiconductor device in quartz cover and the reaction chamber, regulate the distance between inductance-coupled coil and the quartz cover, promptly, when inductance-coupled coil during, just be equivalent to increase the distance of the semiconductor device of inductance-coupled coil in the reaction chamber away from quartz cover; Otherwise, when inductance-coupled coil when the quartz cover, just be equivalent to reduce the distance of inductance-coupled coil to the interior semiconductor device of reaction chamber.The second way, the invariant position that keeps inductance-coupled coil and quartz cover, semiconductor device in the conditioned reaction chamber and the distance between the quartz cover, promptly, when the semiconductor device in the reaction chamber during, just be equivalent to increase the distance of the semiconductor device of inductance-coupled coil in the reaction chamber away from quartz cover; Otherwise, when the semiconductor device in the reaction chamber when the quartz cover, just be equivalent to reduce the distance of inductance-coupled coil to the interior semiconductor device of reaction chamber.Certainly, also the above-mentioned first kind of mode and the second way can be used in combination, that is, regulate distance and semiconductor device in the reaction chamber and the distance between the quartz cover between inductance-coupled coil and the quartz cover simultaneously.
Below in conjunction with Fig. 3 process control device provided by the invention is elaborated.
As shown in Figure 3, process control device provided by the invention comprises: sampling unit 310 is used for the information relevant with processing/disposition is sampled; Control and processing unit 320 are used for adjusting the set point of the parameter relevant with coil height, so that utilize adjusted set point that semiconductor device is processed/handled according to the information relevant with processing/disposition that collects; Memory cell 330 is used to store the parameter relevant with coil height with the corresponding relation between the information relevant with processing/disposition, and described corresponding relation can obtain by experiment and in advance, and is stored in the memory cell 330 with the form of database.
Wherein, control and processing unit 320 specifically comprise: enquiry module 321, and it is inquired about institute's stored relation in the memory cell 330 according to the information relevant with processing/disposition, to obtain the suitable numerical value of the parameter relevant with coil height; Computing module 322, it calculates the suitable numerical value of the parameter relevant with coil height according to the information relevant with processing/disposition; Module 323 is set, is used for resetting the set point of the parameter relevant with coil height according to described suitable numerical value.
Obtain parameter and corresponding relation process results between relevant as for how by experiment in advance, how to determine the suitable numerical value of the parameter relevant with the height of inductance-coupled coil with the height of inductance-coupled coil, and how to regulate the parameter relevant with the height of inductance-coupled coil, can adopt the mode that is similar in the aforementioned process control method, not repeat them here.
What it is pointed out that in the aforementioned embodiment monitoring in real time is the processing of semiconductor device, in other words, is controlled volume with the process results in the previous embodiment.But the present invention is not limited thereto, but also can monitor the technique information of preceding working procedure in real time, and regulate the parameter relevant with the height of inductance-coupled coil according to this technique information, that is, with the technique information of preceding working procedure as controlled volume.That is to say, in process control method provided by the invention and the device, control variables is coil sections or whole height of coils self in the inductance-coupled coil framework, perhaps be the distance between inductance-coupled coil and the processed semiconductor device, controlled volume can be the feedback information of process results or the information of importing into of preceding road technology.
Further it is to be noted, although etching technics and pecvd process with semiconductor device such as wafers in the previous embodiment are that example has been described in detail process control method provided by the invention and device, but the present invention is not limited thereto, and it also can be used for other technical process.Just need to obtain the parameter relevant in advance by experiment with the corresponding relation between this process results with the height of inductance-coupled coil, and it is stored in the database, so that in the actual process process, directly obtain the suitable numerical value of the parameter relevant by Query Database according to process results, perhaps obtain the suitable numerical value of the parameter relevant by calculating with the height of inductance-coupled coil according to process results with the height of inductance-coupled coil.
Be understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (15)
1. a process control method that is used for semiconductor machining/treatment process process is characterized in that, comprises the steps:
1) monitoring semiconductor machining/treatment process is gathered the information relevant with processing/disposition;
2), adjust the set point of the parameter relevant, and semiconductor device is processed/handled with adjusted set point with coil height according to the described information relevant with processing/disposition.
2. process control method according to claim 1, it is characterized in that, before described step 1), also comprise such step, promptly, obtain the parameter relevant by experiment with the corresponding relation between the information relevant, and it is stored in the database with processing/disposition with coil height.
3. process control method according to claim 1 and 2 is characterized in that, described step 2) specifically comprise the steps:
21), obtain the suitable numerical value of the parameter relevant with coil height according to the information relevant that collects with processing/disposition;
22), reset the set point of the parameter relevant with coil height according to described suitable numerical value.
4. process control method according to claim 3 is characterized in that, described step 21) specifically comprise:
According to the information relevant, directly obtain the suitable numerical value of the parameter relevant by Query Database with coil height with processing/disposition; Perhaps
According to the information relevant, obtain the suitable numerical value of the parameter relevant by calculating with coil height with processing/disposition.
5. process control method according to claim 1 is characterized in that, the parameter relevant with coil height comprises the distance between coil height, coil and the processed semiconductor device.
6. process control method according to claim 5, it is characterized in that, distance between described coil and the processed semiconductor device can be regulated by following manner, promptly, distance between the quartz cover of regulating winding and reaction chamber, and/or processed semiconductor device in the conditioned reaction chamber and the distance between the quartz cover.
7. process control method according to claim 1 is characterized in that, the described information relevant with processing/disposition comprises the feedback information of process results and/or from the information of preceding road technology.
8. process control method according to claim 7, it is characterized in that, the feedback information of described process results comprises: the critical size of processed semiconductor device, and/or residue thickness of oxide layer and distribution, and/or the figure pattern of processed/processing, and/or the thickness of deposit rete, and/or the uniformity of deposit thicknesses of layers, and/or the stress of deposit rete.
9. a process control device that is used for semiconductor machining/treatment process process is characterized in that, comprising:
Sampling unit is used for the information relevant with processing/disposition is sampled;
Control and processing unit are used for according to the described information relevant with processing/disposition, adjust the set point of the parameter relevant with coil height, so that utilize adjusted set point that semiconductor device is processed/handled.
10. process control device according to claim 9, it is characterized in that also comprising memory cell, be used to store the parameter relevant with coil height with the corresponding relation between the information relevant with processing/disposition, described corresponding relation can obtain by experiment and in advance.
11. process control device according to claim 10 is characterized in that, described control and processing unit comprise:
Enquiry module is used for according to the information relevant with processing/disposition, and the described corresponding relation of inquiry in memory cell is to obtain the suitable numerical value of the parameter relevant with coil height;
Computing module is used for calculating the suitable numerical value of the parameter relevant with coil height according to the information relevant with processing/disposition;
Module is set, is used for resetting the set point of the parameter relevant with coil height according to described suitable numerical value.
12., it is characterized in that the parameter relevant with coil height comprises the distance between coil height, coil and the processed semiconductor device according to any described process control device in the claim 9 to 11.
13. process control device according to claim 12, it is characterized in that, distance between described coil and the processed semiconductor device can be regulated by following manner, promptly, distance between the quartz cover of regulating winding and reaction chamber, and/or processed semiconductor device in the conditioned reaction chamber and the distance between the quartz cover.
14., it is characterized in that the described information relevant with processing/disposition comprises the feedback information of process results and/or from the information of preceding road technology according to any described process control device in the claim 9 to 11.
15. process control device according to claim 14, it is characterized in that, the feedback information of described process results comprises: the critical size of processed semiconductor device, and/or residue thickness of oxide layer and distribution, and/or the figure pattern of processed/processing, and/or the thickness of deposit rete, and/or the uniformity of deposit thicknesses of layers, and/or the stress of deposit rete.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2007101766963A CN101425448A (en) | 2007-11-01 | 2007-11-01 | Process control method and apparatus |
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| CNA2007101766963A CN101425448A (en) | 2007-11-01 | 2007-11-01 | Process control method and apparatus |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050421A (en) * | 2011-10-17 | 2013-04-17 | 中芯国际集成电路制造(上海)有限公司 | Etching control method |
| CN108899287A (en) * | 2018-06-26 | 2018-11-27 | 上海华力微电子有限公司 | A kind of process control method |
| CN111415854A (en) * | 2019-01-04 | 2020-07-14 | 北京北方华创微电子装备有限公司 | Control method and control device for semiconductor process |
-
2007
- 2007-11-01 CN CNA2007101766963A patent/CN101425448A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050421A (en) * | 2011-10-17 | 2013-04-17 | 中芯国际集成电路制造(上海)有限公司 | Etching control method |
| CN108899287A (en) * | 2018-06-26 | 2018-11-27 | 上海华力微电子有限公司 | A kind of process control method |
| CN111415854A (en) * | 2019-01-04 | 2020-07-14 | 北京北方华创微电子装备有限公司 | Control method and control device for semiconductor process |
| CN111415854B (en) * | 2019-01-04 | 2023-12-22 | 北京北方华创微电子装备有限公司 | Control method and control device for semiconductor process |
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