CN111411390A - Single crystal furnace and method for measuring silicon single crystal rod by using same - Google Patents
Single crystal furnace and method for measuring silicon single crystal rod by using same Download PDFInfo
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- CN111411390A CN111411390A CN202010243723.XA CN202010243723A CN111411390A CN 111411390 A CN111411390 A CN 111411390A CN 202010243723 A CN202010243723 A CN 202010243723A CN 111411390 A CN111411390 A CN 111411390A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/20—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring contours or curvatures, e.g. determining profile
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Abstract
The invention discloses a single crystal furnace, which comprises a traction chamber, wherein a single crystal silicon rod measuring component and a single crystal silicon rod transfer protection component are arranged on the outer wall of the traction chamber, the single crystal silicon rod measuring component comprises a longitudinal guide rail positioned on the outer wall of the traction chamber, a moving element with the bottom end capable of moving to the lower part of the traction chamber is arranged on the guide rail in a matching way, the bottom end of the moving element is connected with an annular scanning element coaxial with the traction chamber, and a power element II positioned on the outer wall of the traction chamber is connected on the moving; the single crystal silicon rod transfer protection assembly comprises a rotating shaft and a first power element which are sequentially connected with the outer wall of the traction chamber along the radial direction of the traction chamber, and a positioning element which can rotate to the lower part of the traction chamber is connected to the rotating shaft. The invention also discloses a method for measuring the silicon single crystal rod by adopting the single crystal furnace. The single crystal furnace and the method for measuring the single crystal silicon rod by using the single crystal furnace solve the problems of poor precision, low efficiency and poor safety in the transfer process of the single crystal silicon rod caused by complex manual operation in the measuring process after the cooling of the existing single crystal silicon rod.
Description
Technical Field
The invention belongs to the technical field of monocrystalline silicon growth, particularly relates to a single crystal furnace, and further relates to a method for measuring a monocrystalline silicon rod by using the single crystal furnace.
Background
Polycrystalline silicon is a major raw material for producing solar photovoltaic products and semiconductor products. The Czochralski (Cz) method is one of the most commonly used methods for preparing single crystal silicon, in which a high purity solid polycrystalline silicon raw material is melted in a crucible in a crystal growth furnace (single crystal furnace) to form a melt, a seed crystal is lowered by a seed crystal pulling mechanism to be brought into contact with molten silicon melt in a molten state in a rotating crucible, and then the seed crystal is pulled out according to a certain process method, and the melt is solidified around the seed crystal to form a single crystal silicon rod.
A traditional Cz single crystal furnace is not provided with a single crystal silicon rod measuring component, and the single crystal silicon rod is generally required to be measured after being cooled and discharged from the furnace in the production process. The parameters measured typically include the total length of the body, the good length of the tail, the maximum diameter, the minimum diameter, and the diameter of a particular spot (e.g., every 5 mm), requiring a great deal of complexity in measuring the dimensions. In addition, in the existing measuring method, an artificial method is mainly adopted to transfer the silicon single crystal rod to the ground for measurement after the silicon single crystal rod is completely taken out, the silicon single crystal rod is protected in a manual holding mode in the transfer process of the silicon single crystal rod, due to the existence of inertia in the transfer process of the silicon single crystal rod, the silicon single crystal rod collides with the inner wall of a traction chamber when the traction chamber starts to move and stops to damage the silicon single crystal rod or damage a crystal pulling furnace, and safety accidents are possibly caused due to the fact that the silicon single crystal rod is not protected, and the problem is solved to a certain extent by adopting the method that the silicon single crystal rod is transferred along with the traction chamber in a manual holding mode. However, when the single crystal silicon rod is manually held for transfer, the physical parts of the operator exist in the vertical projection plane of the single crystal silicon rod, which is dangerous and unsafe. In the current production, the silicon single crystal rod is measured and recorded before entering the next procedure, so that one crystal is realized, and the follow-up tracking, process adjustment and the like of the silicon wafer are facilitated in the later period. In the manual measurement process, the process is time-consuming and labor-consuming, the production time of the monocrystalline silicon is seriously prolonged, and the production efficiency of the straight pull type monocrystalline silicon is limited. In summary, manual operation has the problems of complexity, low efficiency, poor precision, and small data volume after measurement.
In order to meet the requirement of size acquisition after the production of the silicon single crystal rod, the silicon single crystal rod is effectively measured, the production efficiency of the silicon single crystal rod is improved, and the technical defect of low measurement precision caused by excessive manual operation is overcome. There is a patent disclosing a measuring device for a single crystal silicon rod. The patent application with the publication number of CN109029197A provides a measuring device for a silicon single crystal rod, which relates to the technical field of silicon rod detection, in particular to a measuring device for a silicon single crystal rod, comprising a length measuring part and a diameter measuring part; the length measuring part comprises a workbench and a fixed frame, and the fixed frame is used for fixing the cross rod; a sliding sleeve is sleeved on the outer side of the cross rod, and a pneumatic rod is fixed at the bottom of the sliding sleeve; a fixed plate is fixed at the bottom of the pneumatic rod, a baffle is fixed at the bottom edge of the first measuring plate, and one end of the first measuring plate is connected with the second measuring plate through a tape measure; the top of the second measuring plate is provided with a second connecting rod, and the second connecting rod is connected with the rotating shaft through a clockwork spring; the second connecting rod fixes the movable plate, and the movable plate is connected with the limiting rod. The invention has simple operation and can reduce the errors of dislocation and deviation in measurement. However, the structure and function of the measuring device for the single crystal silicon rod according to the above invention are too simple to simply measure the length and diameter of the single crystal silicon rod, which is increasingly difficult to meet the requirement of the semiconductor industry on the data volume of the crystal rod. In addition, the measuring device for the silicon single crystal rod related to the patent requires manual operation in practical use, and is low in efficiency and speed. The utility model patent of the grant publication No. CN206709748U and the grant publication No. CN203929026U provide a measuring device for the growth diameter of a polycrystalline silicon rod, and two utility model provide a measuring device for the growth diameter of a polycrystalline silicon rod, which is mainly used for accurately measuring the growth diameter of a polycrystalline silicon rod in the production process of the polycrystalline silicon rod. On the one hand, the processes and the equipment used in the production of single crystal silicon rods and polycrystalline silicon rods are very different. In addition, according to the mainstream practice in the industry, even if the diameter is measured during the growth of the single crystal silicon rod, the diameter needs to be measured again after the single crystal silicon rod is cooled and taken out. This is mainly due to the fact that the diameter tested during production is not very precise and has a small size variation due to temperature variations.
Therefore, in order to shorten the measurement time after the cooling of the silicon single crystal rod, improve the measurement accuracy after the cooling of the silicon single crystal rod, and reduce the manual operation, it is necessary to adjust the measurement work after the silicon single crystal rod is taken out.
Disclosure of Invention
The invention aims to provide a single crystal furnace, which solves the problems of poor precision, low efficiency and poor safety in the transfer process of a single crystal silicon rod caused by complex manual operation in the measurement process after the cooling of the existing single crystal silicon rod.
The invention also aims to provide a method for measuring the silicon single crystal rod by using the single crystal furnace.
The first technical scheme adopted by the invention is as follows: the single crystal furnace comprises a traction chamber, wherein a single crystal silicon rod measuring component and a single crystal silicon rod transfer protection component are arranged on the outer wall of the traction chamber, the single crystal silicon rod measuring component comprises a longitudinal guide rail positioned on the outer wall of the traction chamber, a moving element is arranged on the guide rail in a matching manner, the bottom end of the moving element can move to the position below the traction chamber, the bottom end of the moving element is connected with an annular scanning element coaxial with the traction chamber, and a power element II positioned on the outer wall of the traction chamber is connected to the; the single crystal silicon rod transfer protection assembly comprises a rotating shaft and a first power element which are sequentially connected with the outer wall of the traction chamber along the radial direction of the traction chamber, and a positioning element which can rotate to the lower part of the traction chamber is connected to the rotating shaft.
The first technical solution of the present invention is also characterized in that,
at least three groups of three-dimensional scanners are uniformly arranged on the inner side wall of the scanning element at intervals along the circumferential direction.
The guide rail is provided with two and symmetric distribution in the both sides of drawing the room.
The silicon single crystal rod transfer protection component is a rectangular frame structure with an opening at one end, the two symmetrical sides of the traction chamber are sleeved with the opening end of the silicon single crystal rod transfer protection component, the two rotating shafts are respectively connected between the opening end of the silicon single crystal rod transfer protection component and the traction chamber, the positioning element is a hole-shaped structure and is provided with one end which is arranged at the silicon single crystal rod transfer protection component and is far away from the traction chamber, and the flexible buffer element is arranged in the positioning element.
And the power element I is coaxially connected with one of the two rotating shafts and is far away from one end of the traction chamber.
A seed crystal lifting mechanism is arranged above the traction chamber, a dome chamber and a main furnace chamber are sequentially arranged below the traction chamber, and the superconducting magnetic field is surrounded outside the main furnace chamber.
The seed crystal pulling mechanism is internally connected with a seed crystal chuck through a molybdenum wire, and the seed crystal chuck is provided with a seed crystal/single crystal silicon rod positioned in the pulling chamber.
The outer wall of the traction chamber is also provided with a connecting component.
The second technical scheme adopted by the invention is as follows: a method for measuring a silicon single crystal rod by using a single crystal furnace comprises the following steps:
step 1: after the silicon single crystal rod is cooled in the traction chamber, opening the traction chamber and controlling the silicon single crystal rod to move upwards;
step 2: stopping the traction chamber, and enabling the single crystal silicon rod transfer protection component to rotate to a vertical state by the action of the power element;
and step 3: the seed crystal pulling mechanism is used for controlling the single crystal silicon rod to descend to the bottom end of the single crystal silicon rod, enter the positioning element and contact with the flexible buffer element, and then the single crystal silicon rod stops descending;
and 4, step 4: the single crystal silicon rod is moved to a single crystal silicon rod taking-out/measuring area together with a traction chamber under the protection of the single crystal silicon rod transfer protection component;
and 5: when the single crystal silicon rod reaches the single crystal silicon rod taking-out/measuring area, the single crystal silicon rod is controlled to ascend to the interior of the traction chamber through the seed crystal lifting mechanism, and the single crystal silicon rod transfer protection component rotates to the initial position through the action of the power element;
step 6: a second power element (the action enables the scanning element to move downwards along the guide rail together with the moving element until the upper edge of the scanning element is not higher than the lower edge of the traction chamber, and then the scanning element is started;
and 7: the seed crystal pulling mechanism controls the single crystal silicon rod to descend at a constant speed and enables the single crystal silicon rod to stop after the single crystal silicon rod integrally passes through the scanning element, and data acquisition of the scanning element on the single crystal silicon rod is completed.
The second technical solution of the present invention is also characterized in that,
further comprising the steps of: and the scanning element is closed after the data acquisition of the single crystal silicon rod by the scanning element is finished, and the power element acts to enable the scanning element to move upwards along the guide rail together with the moving element until the lower edge of the scanning element is not lower than the lower edge of the traction chamber and then stops.
The invention has the beneficial effects that: the single crystal furnace and the method for measuring the single crystal silicon rod by using the single crystal furnace solve the problems of poor precision, low efficiency and poor safety in the transfer process of the single crystal silicon rod caused by complex manual operation in the measuring process after the cooling of the existing single crystal silicon rod. On the basis of the basic problem of solving, the parameter of test has been expanded, has promoted the data bulk, the later stage of being more convenient for is through equipment and technology that measuring result feedback adjusted production link.
Drawings
FIG. 1 is a schematic view of the structure of a single crystal furnace according to the present invention;
FIG. 2 is a detailed view of the single crystal furnace of the present invention;
FIG. 3 is a process diagram a of the single crystal silicon rod measurement using the single crystal furnace according to the present invention;
FIG. 4 is a process diagram b of the single crystal silicon rod measurement using the single crystal furnace according to the present invention;
FIG. 5 is a flow chart of a method for measuring a silicon single crystal rod by using a single crystal furnace according to the present invention.
In the figure, 1, a traction chamber, 2, a seed crystal pulling mechanism, 3, a connecting component and 4, a single crystal silicon rod transfer protection component are arranged; 5. and 6, a measuring component of the silicon single crystal rod.
41. The power element I, 42. a rotating shaft, 43. a positioning element, 44. a flexible buffer element;
51. and a second power element 52, a guide rail 53, a moving element 54 and a scanning element.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention provides a single crystal furnace, as shown in fig. 1 to 4, which comprises a traction chamber 1, wherein a single crystal silicon rod measuring component 5 and a single crystal silicon rod transfer protecting component 4 are arranged on the outer wall of the traction chamber 1, the single crystal silicon rod measuring component 5 comprises a longitudinal guide rail 52 positioned on the outer wall of the traction chamber 1, the guide rail 52 is provided with two moving elements 53, the bottom ends of the two moving elements 53 can move to the lower part of the traction chamber 1, the bottom ends of the two moving elements 53 are connected with an annular scanning element 54 coaxial with the traction chamber 1, the scanning element 54 scans a single crystal silicon rod 6 in the descending process, and the moving element 53 is connected with a second power element 51 positioned on the outer wall of the traction chamber 1; the single crystal silicon rod transfer protection assembly 4 comprises a rotating shaft 42 and a first power element 41 which are sequentially connected with the outer wall of the traction chamber 1 along the radial direction, and a positioning element 43 which can rotate to the lower part of the traction chamber 1 is connected on the rotating shaft 42.
The guide rail 52 is a linear guide rail, and a completely sealed linear module is selected, so that the environment pollution can be reduced to a greater extent while the silicon single crystal rod 6 runs stably, and the quality of the silicon single crystal rod 6 is ensured. The moving stroke of the moving element 53 can meet the condition that the lower end of the scanning element 54 which moves along with the moving element 53 is 10cm higher than the lower edge of the traction chamber 1 when the upper limit is reached, so that the influence and the interference of the monocrystalline silicon rod measuring component 5 on the crystal pulling process are avoided. The moving stroke of the moving element 53 can be satisfied that the upper end of the scanning element 54 moving together with the moving element 53 is lower than the lower edge of the traction chamber 1 by 15cm at the lower limit, so that the precision in the measuring process can be ensured. The angle of the scanning element 54 can be fine-tuned while not in operation to ensure concentricity between the measurement and the finished single crystal silicon rod 6. Alternatively, the present invention provides two power embodiments for moving the moving element on the guide rail 52: the power embodiment of the moving element 53 moving on the guide rail 52 is pneumatic, and the cost of the power is low; the power embodiment of the moving element 53 moving on the guide rail 52 is electric, and stable and precise movement can be realized. The minimum internal diameter of the scanning element 54 is greater than 700mm, so that collisions with the lower part of the pulling chamber 1 of the crystal pulling furnace during operation can be avoided.
At least three groups of three-dimensional scanners are uniformly arranged on the inner side wall of the scanning element 54 at intervals along the circumferential direction for collecting information, and the scanning range can cover the circumference of the whole single crystal silicon rod 6. The data collected by the three-dimensional scanner is processed on an external controller to generate point cloud data of the geometric surface of the single crystal silicon rod 6, and the points are interpolated into the surface shape of the single crystal silicon rod 6 through further processing, so that an accurate three-dimensional model is created for reference of technicians. The three-dimensional scanner can be assembled into a scanning element by using a finished three-dimensional scanner existing in the market, such as a KSCAN20 composite three-dimensional scanner of SCANTECH company, an XTOM-MATRIX three-dimensional high-precision measuring instrument of New Tuo company and the like, and the three-dimensional scanners are all non-contact type and can avoid damage to the surface of the pulled monocrystalline silicon rod 6.
The single crystal silicon rod transfer protection component 4 is a rectangular frame structure with an opening at one end, the two symmetrical sides of the traction chamber 1 are sleeved with the opening end of the single crystal silicon rod transfer protection component 4, two rotating shafts 42 are arranged and are respectively connected between the opening end of the single crystal silicon rod transfer protection component 4 and the traction chamber 1, the positioning element 43 is a hole-shaped structure and is arranged at one end, far away from the traction chamber 1, of the single crystal silicon rod transfer protection component 4, and the flexible buffer element 44 is arranged in the positioning element 43. The first power element 41 is coaxially connected to one of the two rotating shafts 42 at an end away from the traction chamber 1. The single crystal silicon rod transfer protection component 4 provides protection for the pulled single crystal silicon rod 6 in the transfer stage, and the protection mode is mainly that the single crystal silicon rod transfer protection component 4 is locked after rotating for a certain angle (capable of rotating for 160 degrees around the rotating shaft 42) through the rotating shaft 42 to a vertical state, then the single crystal silicon rod 6 descends for a certain height, and the single crystal silicon rod transfer protection component 4 drags the single crystal silicon rod 6 and moves to a specified position along with the traction chamber 1.
A seed crystal pulling mechanism 2 is arranged above the traction chamber 1, a dome chamber and a main furnace chamber are sequentially arranged below the traction chamber 1, and the outside of the main furnace chamber surrounds a superconducting magnetic field. The seed crystal pulling mechanism 2 is internally connected with a seed crystal chuck through a molybdenum wire, and a seed crystal/single crystal silicon rod 6 positioned in the pulling chamber 1 is arranged on the seed crystal chuck. The outer wall of the traction chamber 1 is also provided with a connecting component 3. The seed crystal lifting mechanism 2 has power, and can drive the seed crystal/single crystal silicon rod 6 to lift and rotate. When the single crystal silicon rod 6 is taken out of the crystal pulling furnace, the seed chuck is slowly released by the seed pulling mechanism 2 through the molybdenum wire so that the single crystal silicon rod 6 which is completely pulled is slowly descended in the pulling chamber 1. The pulling chamber 1 is connected to the main frame by a connecting assembly 3, and the pulled single crystal silicon rod 6 is always in the pulling chamber 1 when the pulled single crystal silicon rod 6 is transferred to a pre-lowering point after being cooled in the pulling chamber 1. In the process of transferring along with the traction chamber 1, the traction chamber 1 rotates around the main frame by a certain angle depending on the connecting assembly 3, and the traction chamber 1 can stably rotate for 180 degrees around the main frame under the driving of the connecting assembly 3. After the main body structure of the protection component is locked and fixed, the flexible buffer component 44 can flexibly buffer the single crystal silicon rod 6 through the flexible buffer component 44 when the single crystal silicon rod 6 descends into the bottom positioning component 43 of the single crystal silicon rod transfer protection component 4, so that the single crystal silicon rod 6 is not easily damaged in the descending and transferring processes, and the risk is reduced.
The invention also provides a method for measuring the silicon single crystal rod by adopting the single crystal furnace, which comprises the following steps as shown in figure 5:
step 1: after the single crystal silicon rod 6 is cooled in the traction chamber 1, opening the traction chamber 1 and controlling the traction chamber to move upwards;
step 2: stopping the traction chamber 1, and enabling the first power element 41 to act to enable the single crystal silicon rod transfer protection component 4 to rotate to a vertical state;
and step 3: the single crystal silicon rod 6 is controlled by the seed crystal pulling mechanism 2 to descend to the bottom end of the single crystal silicon rod 6, enter the positioning element 43 and contact with the flexible buffer element 44, and then the single crystal silicon rod 6 stops descending;
and 4, step 4: under the protection of the single crystal silicon rod transfer protection component 4, the single crystal silicon rods 6 are moved to a single crystal silicon rod taking-out/measuring area along with the traction chamber 1;
and 5: when the single crystal silicon rod 6 reaches the single crystal silicon rod taking-out/measuring area, the single crystal silicon rod 6 is controlled to ascend to the interior of the traction chamber 1 through the seed crystal pulling mechanism 2, and the power element I41 acts to enable the single crystal silicon rod transfer protection component 4 to rotate to the initial position;
step 6: the second power element 51 acts to enable the scanning element 54 to move downwards together with the moving element 53 along the guide rail 52 until the upper edge of the scanning element 54 is not higher than the lower edge of the traction chamber 1, and then the scanning element 54 is started;
and 7: the seed crystal pulling mechanism 2 controls the single crystal silicon rod 6 to descend at a constant speed and stops after the whole single crystal silicon rod passes through the scanning element 54, so that the data acquisition of the scanning element 54 on the single crystal silicon rod 6 is completed.
After the data acquisition of the single crystal silicon rod 6 by the scanning element 54 is completed, the scanning element 54 is closed, and the second power element 51 acts to enable the scanning element 54 to move upwards together with the moving element 53 along the guide rail 52 until the lower edge of the scanning element 54 is not lower than the lower edge of the traction chamber 1 and then stops.
When the method for measuring the silicon single crystal rod by adopting the single crystal furnace is implemented specifically, after the silicon single crystal rod 6 is cooled in the traction chamber 1, an operator operates the controller to lift the traction chamber 1 to be separated from the auxiliary furnace chamber and then continuously lift the traction chamber by a certain height so as to meet the requirement that a certain release space exists for a protection component. After the traction chamber 1 reaches the designated position, the operator operates the controller to control the first power element 41, and the first power element 41 outputs power so that the single crystal silicon rod transfer protection assembly 4 rotates around the rotating shaft 42 to reach the designated position and is locked. The operator then operates the controller to control the seed crystal pulling mechanism 2 to release the single crystal silicon rod 6 downwards, at which time the single crystal silicon rod 6 is slowly lowered under the traction of the molybdenum wire until the tip of the tail of the single crystal silicon rod 6 is about to contact the flexible buffer element 44 on the bottom positioning element 43 of the single crystal silicon rod transfer protection assembly 4, the speed of the seed crystal pulling mechanism 2 is reduced to slow the speed of the lowering of the single crystal silicon rod 6, and then the lowering of the single crystal silicon rod 6 is stopped after the slow lowering of the single crystal silicon rod 6 contacts the flexible buffer element 44, at which time the tip of the tail of the single crystal silicon rod 6 is. An operator operates the controller, and the connecting component 3 drives the traction chamber 1 to slowly move to a position where the single crystal silicon rod is to be taken out. After the single crystal silicon rod 6 moves to a specified position along with the traction chamber 1, an operator firstly operates the controller to enable the seed crystal pulling mechanism 2 to pull the single crystal silicon rod 6, and at the moment, the single crystal silicon rod 6 slowly rises to be separated from the flexible buffer element 44 and continuously rises for a certain distance, so that the bottom of the single crystal silicon rod 6 completely enters the traction chamber 1. When the single crystal silicon rod 6 is completely separated from the ingot transfer protection assembly 4, the operator operates the controller to enable the first power element 41 to drive the single crystal silicon rod transfer protection assembly to rotate around the rotating shaft 42 thereof to return to the initial position and lock the single crystal silicon rod transfer protection assembly. The operator then releases the single crystal silicon rod measuring assembly 5 downward by the controller, at which time the scanning unit 54 and the moving unit 53 together move slowly downward along the guide rail 52 under the driving of the second power unit 51 until the upper edge of the scanning unit 54 is stopped at a distance of 10cm from the lower edge of the pulling chamber 1, as shown in fig. 3. After the downward movement process of the single crystal silicon rod measuring component 5 is completed, the operator turns on the scanning element 54 through the controller, so that the scanning element 54 starts to work and controls the seed crystal pulling mechanism 2 to slowly release the single crystal silicon rod 6 downward at a constant speed, as shown in fig. 4. After the entire single crystal silicon rod 6 has passed the scanning unit 54 at a constant speed, the seed crystal pulling mechanism 2 is stopped, and the single crystal silicon rod 6 is at rest below the scanning unit 54. The scanning element 54 is then turned off by the controller and the monocrystalline silicon rod measurement assembly 5 is raised to the initial position. At this time, the transfer and lowering of the single crystal silicon rod 6 are completed and the measurement of the single crystal silicon rod 6 is completed at the same time, and a technician can view the measurement data of the single crystal silicon rod 6 through the PC terminal. So far, the whole process is finished and the next process is started.
Through the mode, the single crystal furnace and the method for measuring the single crystal silicon rod by adopting the single crystal furnace solve the problems of poor precision, low efficiency and poor safety in the transfer process of the single crystal silicon rod caused by complex manual operation in the measuring process after the existing single crystal silicon rod is cooled. On the basis of the basic problem of solving, the parameter of test has been expanded, has promoted the data bulk, the later stage of being more convenient for is through equipment and technology that measuring result feedback adjusted production link.
Claims (10)
1. The single crystal furnace is characterized by comprising a traction chamber (1), wherein a single crystal silicon rod measuring component (5) and a single crystal silicon rod transfer protecting component (4) are arranged on the outer wall of the traction chamber (1), the single crystal silicon rod measuring component (5) comprises a longitudinal guide rail (52) positioned on the outer wall of the traction chamber (1), a moving element (53) with the bottom end capable of moving to the lower part of the traction chamber (1) is arranged on the guide rail (52) in a matching mode, the bottom end of the moving element (53) is connected with an annular scanning element (54) coaxial with the traction chamber (1), and a second power element (51) positioned on the outer wall of the traction chamber (1) is connected onto the moving element (53); the single crystal silicon rod transfer protection assembly (4) comprises a rotating shaft (42) and a first power element (41) which are sequentially connected with the outer wall of the traction chamber (1) along the radial direction of the traction chamber, and a positioning element (43) which can rotate to the lower part of the traction chamber (1) is connected onto the rotating shaft (42).
2. The single crystal furnace of claim 1, wherein the inner side wall of the scanning element (54) is provided with at least three sets of three-dimensional scanners at uniform intervals along the circumferential direction.
3. Single crystal furnace according to claim 1, characterized in that the guide rails (52) are provided in two and symmetrically distributed on both sides of the pulling chamber (1).
4. The single crystal furnace according to claim 1, wherein the single crystal silicon rod transfer protection component (4) is a rectangular frame structure with an opening at one end, the opening end of the single crystal silicon rod transfer protection component (4) is sleeved at two symmetrical sides of the traction chamber (1), two rotating shafts (42) are arranged and are respectively connected between the opening end of the single crystal silicon rod transfer protection component (4) and the traction chamber (1), the positioning element (43) is a hole-shaped structure and is arranged at one end of the single crystal silicon rod transfer protection component (4) far away from the traction chamber (1), and a flexible buffer element (44) is arranged in the positioning element (43).
5. Single crystal furnace according to claim 4, characterized in that the first power element (41) is coaxially connected to one of the two rotary shafts (42) at the end remote from the pulling chamber (1).
6. The single crystal furnace according to claim 4, wherein a seed crystal pulling mechanism (2) is provided above the pulling chamber (1), and a dome chamber and a main furnace chamber are provided in this order below the pulling chamber (1), and the main furnace chamber externally surrounds the superconducting magnetic field.
7. The single crystal furnace as claimed in claim 6, characterized in that a seed chuck is connected to the seed crystal pulling mechanism (2) through a molybdenum wire, and a seed crystal/single crystal silicon rod (6) is mounted on the seed chuck in the pulling chamber (1).
8. Single crystal furnace according to claim 1, characterized in that the outer wall of the pulling chamber (1) is further provided with a connecting assembly (3).
9. A method for measuring a silicon single crystal rod by using the single crystal furnace as claimed in claim 7, characterized by comprising the following steps:
step 1: after the silicon single crystal rod (6) is cooled in the traction chamber (1), opening the traction chamber (1) and controlling the silicon single crystal rod to move upwards;
step 2: stopping the traction chamber (1), and enabling the first power element (41) to act to enable the single crystal silicon rod transfer protection component (4) to rotate to a vertical state;
and step 3: the seed crystal pulling mechanism (2) controls the single crystal silicon rod (6) to descend to the bottom end of the single crystal silicon rod to enter the positioning element (43) and contact with the flexible buffer element (44), and then the single crystal silicon rod (6) stops descending;
and 4, step 4: the single crystal silicon rod (6) is moved to a single crystal silicon rod taking-out/measuring area together with the traction chamber (1) under the protection of the single crystal silicon rod transfer protection component (4);
and 5: when the single crystal silicon rod (6) reaches a single crystal silicon rod taking-out/measuring area, the single crystal silicon rod (6) is controlled to ascend to the inside of the traction chamber (1) through the seed crystal pulling mechanism (2), and the power element I (41) acts to enable the single crystal silicon rod transfer protection component (4) to rotate to an initial position;
step 6: the second power element (51) acts to enable the scanning element (54) to move downwards along the guide rail (52) together with the moving element (53), the scanning element (54) stops when the upper edge of the scanning element (54) is not higher than the lower edge of the traction chamber (1), and then the scanning element (54) is started;
and 7: the seed crystal pulling mechanism (2) is used for controlling the single crystal silicon rod (6) to descend at a constant speed and enabling the whole single crystal silicon rod to stop after passing through the scanning element (54), and data acquisition of the scanning element (54) on the single crystal silicon rod (6) is completed.
10. The method of claim 9, further comprising the steps of: and after the data acquisition of the scanning element (54) to the single crystal silicon rod (6) is completed, the scanning element (54) is closed, and the second power element (51) acts to enable the scanning element (54) to jointly move upwards along the guide rail (52) along with the moving element (53) until the lower edge of the scanning element (54) is not lower than that of the traction chamber (1) and then stops.
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| CN114088040A (en) * | 2021-10-09 | 2022-02-25 | 银川隆基硅材料有限公司 | Square rod size measuring device and measuring method |
| CN116411351A (en) * | 2023-03-07 | 2023-07-11 | 襄阳鸿凯智能装备有限公司 | Silicon carbon material apparatus for producing |
| TWI815602B (en) * | 2021-12-14 | 2023-09-11 | 大陸商西安奕斯偉材料科技股份有限公司 | Methods, devices, equipment and computer storage media for detecting coaxiality of single crystal furnaces |
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