CN111411390A - Single crystal furnace and method for measuring silicon single crystal rod by using same - Google Patents

Abstract

The single crystal furnace disclosed in the present invention includes a pulling chamber. A single crystal silicon rod measuring assembly and a single crystal silicon rod transfer protection assembly are arranged on the outer wall of the pulling chamber. The single crystal silicon rod measuring assembly includes a longitudinal guide rail located on the outer wall of the pulling chamber. A moving element whose bottom end can be moved to the lower part of the traction chamber is matched with the upper part, the bottom end of the moving element is connected with an annular scanning element that is coaxial with the traction chamber, and the moving element is connected with a power element 2 located on the wall of the traction chamber; single crystal The silicon rod transfer protection assembly includes a rotating shaft and a power element 1 which are sequentially connected to the outer wall of the pulling chamber along the radial direction. The rotating shaft is connected with a positioning element that can be rotated below the pulling chamber. The invention also discloses a method for measuring a single crystal silicon rod by using the single crystal furnace. The single crystal furnace of the present invention and the method for measuring single crystal silicon rods using the same solve the problems of poor precision, low efficiency and the transfer process of single crystal silicon rods caused by complicated manual operation in the measurement process after cooling of the existing single crystal silicon rods. the problem of poor security.

Description

Single crystal furnace and method for measuring single crystal silicon rod using the same

technical field

The invention belongs to the technical field of single crystal silicon growth, in particular to a single crystal furnace, and also relates to a method for measuring single crystal silicon rods by using the single crystal furnace.

Background technique

Polysilicon is the main raw material for the production of solar photovoltaic products and semiconductor products. The Czochralski (Cz) method is one of the most commonly used preparation methods for single crystal silicon. The pulling mechanism lowers the seed crystal to make it contact with the molten silicon soup in the rotating crucible. Then, the seed crystal is pulled out according to a certain technological method, and the melt solidifies around the seed crystal to form a single crystal silicon rod.

The traditional Cz single crystal furnace does not have single crystal silicon rod measuring components. In the production process, it is generally necessary to measure the single crystal silicon rod after the single crystal silicon rod is cooled and released from the furnace. The measured parameters generally include the total length of the crystal body, the good length of the crystal body, the good length of the tail, the maximum diameter, the minimum diameter and the diameter of a specific point (for example, once every 5mm), which requires a lot of complicated work to measure the size. . In addition, in the existing measurement methods, manual methods are mainly used to transfer the single crystal silicon rod to the ground for measurement after the single crystal silicon rod is completely taken out. During the transfer process of the single crystal silicon rod, due to the existence of inertia, if the single crystal silicon rod is not protected, it may cause the single crystal silicon rod to collide with the wall of the pulling chamber when the pulling chamber starts to move and stops, which may damage the single crystal silicon rod or damage the pulling chamber. The crystal furnace may also cause safety accidents, and the method of manually holding the single crystal silicon rod with the traction chamber to a certain extent solves the above problems. However, when the single crystal silicon rod is manually transferred by hand, the operator's limbs will exist in the vertical projection plane of the single crystal silicon rod, which is very dangerous and unsafe. And in the current production, single crystal silicon rods must be measured and filed before entering the next process, so as to realize one crystal and one file, which is convenient for later silicon wafer tracking and process adjustment. In the manual measurement process, the process is time-consuming and labor-intensive, which seriously prolongs the production time of monocrystalline silicon and restricts the production efficiency of Czochralski monocrystalline silicon. All in all, manual operations are complicated, inefficient, and have poor precision, as well as a small amount of data after measurement.

In order to meet the requirements of size acquisition of single crystal silicon rods after production, effective measurement of single crystal silicon rods can improve the production efficiency of single crystal silicon rods and make up for the technical defects of low measurement accuracy caused by excessive manual operations. An existing patent discloses a measuring device for a single crystal silicon rod. The patent application with publication number CN109029197A provides a measuring device for single crystal silicon rods, the patent relates to the technical field of silicon rod detection, in particular to a measuring device for single crystal silicon rods, including a length measuring part and a diameter The measuring part; the length measuring part includes a worktable, a fixing frame, and the fixing frame fixes the crossbar; the outer side of the crossbar is sleeved with a sliding sleeve, and the bottom of the sliding sleeve is fixed with a pneumatic rod; the bottom of the pneumatic rod is fixed with a fixing plate, the first A baffle plate is fixed at the bottom edge of a measuring plate, and one end of the first measuring plate is connected to the second measuring plate through a tape measure; the top of the second measuring plate has a second connecting rod, and the second connecting rod is connected to the rotating shaft through a spring; The second connecting rod fixes the movable plate, and the movable plate is connected with the limit rod. The invention has simple operation and can reduce the errors of dislocation and deviation in measurement. However, the structure and function of a measuring device for a single crystal silicon rod involved in the above invention patent is too simple, and it can only simply measure the length and diameter of the single crystal silicon rod, which is more and more difficult to meet the requirements of the semiconductor industry for crystal rods. data volume requirements. In addition, the measurement device for single crystal silicon rods involved in this patent requires manual operation and has low efficiency and slow speed in actual use. The utility model patents with the authorization announcement number CN206709748U and the authorization announcement number CN203929026U provide a measuring device for the growth diameter of polycrystalline silicon rods, and the two utility models propose a measuring device for the growth diameter of polycrystalline silicon rods. The growth diameter of polycrystalline silicon rods is accurately measured during the process. On the one hand, the production process of monocrystalline silicon rods and the production process of polycrystalline silicon rods are quite different in the process methods and equipment used. In addition, according to the current mainstream practice in the industry, even if the diameter is measured during the growth of the single crystal silicon rod, the measurement needs to be performed again after the single crystal silicon rod is cooled and taken out. This is mainly due to the inaccuracy of the diameters tested during production and the slight dimensional changes due to temperature changes.

Therefore, in order to shorten the measurement time after the single crystal silicon rod is cooled, improve the measurement accuracy after the single crystal silicon rod is cooled, and reduce manual operations, it is urgent to adjust the measurement work after the single crystal silicon rod is taken out.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide a single crystal furnace, which solves the problems of poor precision, low efficiency and poor safety during the transfer of the single crystal silicon rod caused by complicated manual operation in the measurement process after cooling of the existing single crystal silicon rod.

Another object of the present invention is to provide a method for measuring a single crystal silicon rod using the above single crystal furnace.

The first technical solution adopted by the present invention is: a single crystal furnace, including a pulling chamber, a single crystal silicon rod measuring assembly and a single crystal silicon rod transfer protection assembly are arranged on the outer wall of the pulling chamber, and the single crystal silicon rod measuring assembly includes a The longitudinal guide rail of the traction chamber wall, the guide rail is matched with a moving element whose bottom end can move to the lower part of the traction chamber, the bottom end of the moving element is connected with an annular scanning element that is coaxial with the traction chamber, and the moving element is connected with the outer wall of the traction chamber. The second power element on the upper; the single crystal silicon rod transfer protection assembly includes a rotating shaft and a power element one connected in turn along the radial direction of the pulling chamber and its outer wall, and the rotating shaft is connected with a positioning element that can rotate below the pulling chamber.

The first technical solution of the present invention is also characterized in that,

At least three groups of three-dimensional scanners are arranged on the inner sidewall of the scanning element at uniform intervals along the circumferential direction.

Two guide rails are arranged and symmetrically distributed on both sides of the traction chamber.

The single crystal silicon rod transfer protection component is a rectangular frame structure with one end open. The open end of the single crystal silicon rod transfer protection component is sleeved on the symmetrical sides of the pulling chamber, and two rotating shafts are provided and connected to the single crystal silicon rod transfer protection component Between the open end of the assembly and the pulling chamber, the positioning element has a hole-shaped structure and is arranged at one end of the single crystal silicon rod transfer protection assembly away from the pulling chamber, and a flexible buffer element is arranged in the positioning element.

The power element is coaxially connected to one end of one of the two rotating shafts and is away from the traction chamber.

A seed crystal pulling mechanism is arranged above the pulling chamber, a dome chamber and a main furnace chamber are arranged in sequence below the pulling chamber, and the outside of the main furnace chamber is surrounded by a superconducting magnetic field.

The seed crystal pulling mechanism is connected with a seed crystal chuck through a molybdenum wire, and a seed crystal/single crystal silicon rod located in the pulling chamber is installed on the seed crystal chuck.

A connecting component is also arranged on the outer wall of the traction chamber.

The second technical solution adopted in the present invention is: a method for measuring single crystal silicon rods by using a single crystal furnace, comprising the following steps:

Step 1: After the monocrystalline silicon rod is cooled in the pulling chamber, open the pulling chamber and control its upward movement;

Step 2: Stop the traction chamber, and a movement of the power element makes the single crystal silicon rod transfer protection assembly rotate to a vertical state;

Step 3: Control the single crystal silicon rod to descend to the bottom end of the single crystal silicon rod through the seed crystal pulling mechanism to enter the positioning element and contact the flexible buffer element, and then the single crystal silicon rod stops descending;

Step 4: Move the single crystal silicon rod together with the pulling chamber to the single crystal silicon rod extraction/measurement area under the protection of the single crystal silicon rod transfer protection component;

Step 5: When the single crystal silicon rod reaches the single crystal silicon rod extraction/measurement area, the single crystal silicon rod is controlled by the seed crystal pulling mechanism to rise to the inside of the pulling chamber, and the power element moves to make the single crystal silicon rod transfer protection component rotate to initial position;

Step 6: Power element 2 (action causes the scanning element to move downward along the guide rail together with the moving element, and stops until the upper edge of the scanning element is not higher than the lower edge of the traction chamber, and then the scanning element is turned on;

Step 7: Control the single crystal silicon rod to descend at a constant speed through the seed crystal pulling mechanism and make it pass through the scanning element as a whole and then stop, and complete the data collection of the single crystal silicon rod by the scanning element.

The second technical solution of the present invention is also characterized in that:

It also includes the following steps: turning off the scanning element after completing the data acquisition of the single crystal silicon rod by the scanning element, the second action of the power element makes the scanning element move up together with the moving element along the guide rail, until the lower edge of the scanning element is not lower than the traction chamber stop after the lower edge.

The beneficial effects of the present invention are: the single crystal furnace of the present invention and the method for measuring single crystal silicon rods using the same solve the problems of poor precision and low efficiency caused by complicated manual operations in the measurement process after cooling of the existing single crystal silicon rods. And the problem of poor safety during the transfer of single crystal silicon rods. On the basis of the basic problems solved, the parameters of the test are expanded, the amount of data is increased, and it is more convenient to adjust the equipment and process of the production link through the feedback of the measurement results in the later stage.

Description of drawings

Fig. 1 is the structural representation of the single crystal furnace of the present invention;

Fig. 2 is the detail view of the single crystal furnace of the present invention;

3 is a process diagram a of the present invention using a single crystal furnace to measure a single crystal silicon rod;

4 is a process diagram b of the present invention using a single crystal furnace to measure a single crystal silicon rod;

FIG. 5 is a flow chart of the method for measuring a single crystal silicon rod by using a single crystal furnace according to the present invention.

In the figure, 1. the pulling chamber, 2. the seed crystal pulling mechanism, 3. the connecting component, 4. the single crystal silicon rod transfer protection component; 5. the single crystal silicon rod measuring component, 6. the single crystal silicon rod.

41. Power element one, 42. Rotating shaft, 43. Positioning element, 44. Flexible buffer element;

51. Power element two, 52. Guide rail, 53. Moving element, 54. Scanning element.

Detailed ways

The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

The present invention provides a single crystal furnace, as shown in FIG. 1 to FIG. 4 , including a pulling chamber 1 , and a single crystal silicon rod measuring component 5 and a single crystal silicon rod transfer protection component 4 are arranged on the outer wall of the pulling chamber 1 . The crystalline silicon rod measuring assembly 5 includes a longitudinal guide rail 52 located on the outer wall of the traction chamber 1 . The guide rails 52 are provided with two and symmetrically distributed on both sides of the traction chamber 1 . The lower moving element 53, the bottom ends of the two moving elements 53 are connected with an annular scanning element 54 coaxial with the traction chamber 1, the scanning element 54 scans the single crystal silicon rod 6 in the descending process, and the moving element 53 is connected with a The second power element 51 is located on the outer wall of the traction chamber 1; the single crystal silicon rod transfer protection assembly 4 includes a rotating shaft 42 and a power element 1 41 connected in turn along the radial direction of the pulling chamber 1 and its outer wall, and the rotating shaft 42 is connected to the traction chamber. Positioning element 43 below 1.

The guide rail 52 is a linear guide rail, and a completely sealed linear module is selected, which can reduce environmental pollution to a greater extent while running smoothly, and ensure the quality of the single crystal silicon rod 6 . The moving stroke of the moving element 53 can satisfy the upper limit, and the lower end of the scanning element 54 that moves together with the moving element 53 is 10 cm higher than the lower edge of the pulling chamber 1, so as to avoid the influence of the single crystal silicon rod measuring assembly 5 on the crystal pulling process. interference. When the moving stroke of the moving element 53 is at the lower limit, the upper end of the scanning element 54 that moves together with the moving element 53 is 15 cm lower than the lower edge of the pulling chamber 1, which can ensure the accuracy in the measurement process. The angle of the scanning element 54 can be fine-tuned when not in operation to ensure the coaxiality of the drawn single crystal silicon rod 6 during measurement. Optionally, the present invention provides two power implementations for the moving element 53 to move on the guide rail 52: the power implementation for the moving element 53 to move on the guide rail 52 is pneumatic, and the power is sufficient and the cost is low; the moving element 53 moves on the guide rail 52. The power implementation is electric for smooth, precise movement. The inner minimum diameter of the scanning element 54 is greater than 700 mm, which can avoid collision with the lower part of the pulling chamber 1 of the crystal pulling furnace during operation.

At least three groups of three-dimensional scanners are arranged on the inner sidewall of the scanning element 54 at uniform intervals along the circumferential direction to collect information, and the scanning range can cover the entire circumference of the single crystal silicon rod 6 . The data collected by the 3D scanner is processed on the external controller to generate point cloud data of the geometric surface of the single crystal silicon rod 6, and these points are interpolated into the surface shape of the single crystal silicon rod 6 through further processing to create an accurate 3D model For the reference of technical personnel. The above-mentioned 3D scanner can be assembled into the scanning element by using the finished 3D scanner in the market, such as the KSCAN20 composite 3D scanner of SCANTECH, the XTOM-MATRIX 3D high-precision measuring instrument of Xintuo, etc. All are non-contact, which can avoid damage to the surface of the single crystal silicon rod 6 that has been drawn.

The single crystal silicon rod transfer protection assembly 4 is a rectangular frame structure with one end open. The open end of the single crystal silicon rod transfer protection assembly 4 is sleeved on two symmetrical sides of the pulling chamber 1. Two rotating shafts 42 are provided and are respectively connected to the single crystal silicon rod. Between the open end of the silicon rod transfer protection assembly 4 and the pulling chamber 1, the positioning element 43 is a hole-shaped structure and is opened at one end of the single crystal silicon rod transfer protection assembly 4 away from the pulling chamber 1, and a flexible buffer element is arranged in the positioning element 43 44. The power element 1 41 is coaxially connected to one end of one of the two rotating shafts 42 away from the traction chamber 1 . The single crystal silicon rod transfer protection component 4 provides protection for the single crystal silicon rod 6 that has been drawn during the transfer stage. The rotating shaft 42 is rotated 160°) to the vertical state and then locked, and then the single crystal silicon rod 6 is lowered to a certain height.

A seed crystal pulling mechanism 2 is arranged above the pulling chamber 1 , a dome chamber and a main furnace chamber are arranged in sequence below the pulling chamber 1 , and the outside of the main furnace chamber is surrounded by a superconducting magnetic field. The seed crystal pulling mechanism 2 is connected with a seed crystal chuck through a molybdenum wire, and a seed crystal/single crystal silicon rod 6 located in the pulling chamber 1 is installed on the seed crystal chuck. A connecting assembly 3 is also arranged on the outer wall of the traction chamber 1 . The seed crystal pulling mechanism 2 has power and can drive the seed crystal/single crystal silicon rod 6 to lift and rotate. When the single crystal silicon rod 6 is taken out from the crystal pulling furnace, the seed crystal chuck is slowly released by the seed crystal pulling mechanism 2 through the molybdenum wire, so that the drawn single crystal silicon rod 6 slowly descends in the pulling chamber 1 . The pulling chamber 1 is connected to the main frame through the connecting assembly 3. When the drawn single crystal silicon rod 6 is cooled in the pulling chamber 1 and transferred to the pre-lowering point, the drawn single crystal silicon rod 6 is always pulling. Room 1. During the transfer process with the traction chamber 1 , the traction chamber 1 rotates around the main frame by a certain angle relying on the connecting assembly 3 , and the traction chamber 1 can smoothly rotate 180 degrees around the main frame under the driving of the connecting assembly 3 . After the flexible buffer element 44 is locked and fixed to the main structure of the protection assembly, when the single crystal silicon rod 6 is lowered into the bottom positioning element 43 of the single crystal silicon rod transfer protection assembly 4, the single crystal silicon rod 6 can be moved by the flexible buffer element 44. Flexible buffering, which makes the single crystal silicon rod 6 less likely to be damaged during the descending and transferring process, reducing the risk.

The present invention also provides a method for measuring a single crystal silicon rod using the single crystal furnace, as shown in FIG. 5 , including the following steps:

Step 1: After the monocrystalline silicon rod 6 is cooled in the pulling chamber 1, the pulling chamber 1 is opened and the upward movement is controlled;

Step 2: Stop the traction chamber 1, and the action of the power element 1 41 makes the single crystal silicon rod transfer protection assembly 4 rotate to a vertical state;

Step 3: Control the single crystal silicon rod 6 to descend to the bottom end of the single crystal silicon rod 6 through the seed crystal pulling mechanism 2 to enter the positioning element 43 and contact the flexible buffer element 44, and then the single crystal silicon rod 6 stops descending;

Step 4: Move the single crystal silicon rod 6 together with the pulling chamber 1 to the single crystal silicon rod extraction/measurement area under the protection of the single crystal silicon rod transfer protection component 4;

Step 5: When the single crystal silicon rod 6 reaches the single crystal silicon rod extraction/measurement area, the single crystal silicon rod 6 is controlled by the seed crystal pulling mechanism 2 to rise to the inside of the pulling chamber 1, and the power element 1 41 moves to make the single crystal silicon rod move. The transfer protection assembly 4 is rotated to the initial position;

Step 6: The action of the second power element 51 causes the scanning element 54 to move downward together with the moving element 53 along the guide rail 52 until the upper edge of the scanning element 54 is not higher than the lower edge of the pulling chamber 1 and stops, and then the scanning element 54 is turned on ;

Step 7: The single crystal silicon rod 6 is controlled by the seed crystal pulling mechanism 2 to descend at a constant speed and the entirety of the single crystal silicon rod 6 passes through the scanning element 54 and then stops, and the data collection of the single crystal silicon rod 6 by the scanning element 54 is completed.

After completing the data collection of the single crystal silicon rod 6 by the scanning element 54, the scanning element 54 is turned off, and the action of the second power element 51 causes the scanning element 54 to move up together with the moving element 53 along the guide rail 52 until the lower edge of the scanning element 54 is not low. Stop after the lower edge of the traction chamber 1.

In the specific implementation of the method of using a single crystal furnace to measure a single crystal silicon rod of the present invention, after the single crystal silicon rod 6 is cooled in the pulling chamber 1, the operator operates the controller to lift the pulling chamber 1 and separate it from the auxiliary furnace chamber. And continue to raise a certain height to meet a certain release space for the protection components. When the traction chamber 1 reaches the designated position, the operator operates the controller to control the power element one 41, and the power element one 41 outputs power to make the single crystal silicon rod transfer protection assembly 4 rotate around the rotating shaft 42 to the designated position and lock it. Then the operator operates the controller to control the seed crystal pulling mechanism 2 to release the single crystal silicon rod 6 downward. At this time, the single crystal silicon rod 6 slowly descends under the traction of the molybdenum wire until the tip of the tail of the single crystal silicon rod 6 is about to touch the single crystal silicon rod 6. When the crystal silicon rod is transferred to the flexible buffer element 44 on the positioning element 43 at the bottom of the protection assembly 4, the speed of the seed crystal pulling mechanism 2 is slowed down, so that the descending speed of the single crystal silicon rod 6 is slowed down, and then the single crystal silicon rod 6 slowly descends to contact the flexible The buffer element 44 then stops descending. At this time, the tip of the tail of the single crystal silicon rod 6 is aligned with the center of the positioning element 43 . The operator operates the controller, and the connecting assembly 3 drives the pulling chamber 1 to move slowly to the position where the single crystal silicon rod is about to be taken out. When the single crystal silicon rod 6 moves to the designated position along with the pulling chamber 1, the operator first operates the controller to make the seed crystal pulling mechanism 2 pull the single crystal silicon rod 6. At this time, the single crystal silicon rod 6 slowly rises and becomes flexible. The buffer element 44 is disengaged and continues to rise for a certain distance so that the bottom of the single crystal silicon rod 6 completely enters the pulling chamber 1 . When the single crystal silicon rod 6 is completely separated from the crystal rod transfer protection assembly 4, the operator operates the controller to make the power element 1 41 drive the single crystal silicon rod transfer protection assembly to rotate around its rotating shaft 42 back to the initial position and lock it. Then the operator releases the single crystal silicon rod measuring assembly 5 downward through the controller. At this time, the scanning element 54 and the moving element 53 slowly move downward along the guide rail 52 under the driving of the second power element 51 until the upper edge of the scanning element 54 is separated from the upper edge of the scanning element 54. Stop when the lower edge of the traction chamber 1 is 10 cm, as shown in Figure 3. After the downward movement of the single crystal silicon rod measuring assembly 5 is completed, the operator turns on the scanning element 54 through the controller to start the scanning element 54 and controls the seed crystal pulling mechanism 2 to slowly release the single crystal silicon rod 6 downward at a constant speed. ,As shown in Figure 4. After the single crystal silicon rod 6 passes through the scanning element 54 at a constant speed and slowly, the seed crystal pulling mechanism 2 is stopped. At this time, the single crystal silicon rod 6 is stationary at the lower part of the scanning element 54 . The scanning element 54 is then turned off by the controller and the single crystal silicon rod measuring assembly 5 is raised to the initial position. At this time, the transfer and descent of the single crystal silicon rod 6 is completed and the measurement of the single crystal silicon rod 6 is completed at the same time, and the technician can view the measurement data of the single crystal silicon rod 6 through the PC terminal. At this point, the entire process is completed and the next process is entered.

Through the above method, the single crystal furnace of the present invention and the method for measuring single crystal silicon rods using the same solve the problems of poor precision, low efficiency and single crystal silicon rods caused by complicated manual operations in the measurement process after cooling of the existing single crystal silicon rods. The problem of poor safety during the transfer of silicon rods. On the basis of the basic problems solved, the parameters of the test are expanded, the amount of data is increased, and it is more convenient to adjust the equipment and process of the production link through the feedback of the measurement results in the later stage.

Claims (10)

1. The single crystal furnace is characterized by comprising a traction chamber (1), wherein a single crystal silicon rod measuring component (5) and a single crystal silicon rod transfer protecting component (4) are arranged on the outer wall of the traction chamber (1), the single crystal silicon rod measuring component (5) comprises a longitudinal guide rail (52) positioned on the outer wall of the traction chamber (1), a moving element (53) with the bottom end capable of moving to the lower part of the traction chamber (1) is arranged on the guide rail (52) in a matching mode, the bottom end of the moving element (53) is connected with an annular scanning element (54) coaxial with the traction chamber (1), and a second power element (51) positioned on the outer wall of the traction chamber (1) is connected onto the moving element (53); the single crystal silicon rod transfer protection assembly (4) comprises a rotating shaft (42) and a first power element (41) which are sequentially connected with the outer wall of the traction chamber (1) along the radial direction of the traction chamber, and a positioning element (43) which can rotate to the lower part of the traction chamber (1) is connected onto the rotating shaft (42).

2. The single crystal furnace of claim 1, wherein the inner side wall of the scanning element (54) is provided with at least three sets of three-dimensional scanners at uniform intervals along the circumferential direction.

3. Single crystal furnace according to claim 1, characterized in that the guide rails (52) are provided in two and symmetrically distributed on both sides of the pulling chamber (1).

4. The single crystal furnace according to claim 1, wherein the single crystal silicon rod transfer protection component (4) is a rectangular frame structure with an opening at one end, the opening end of the single crystal silicon rod transfer protection component (4) is sleeved at two symmetrical sides of the traction chamber (1), two rotating shafts (42) are arranged and are respectively connected between the opening end of the single crystal silicon rod transfer protection component (4) and the traction chamber (1), the positioning element (43) is a hole-shaped structure and is arranged at one end of the single crystal silicon rod transfer protection component (4) far away from the traction chamber (1), and a flexible buffer element (44) is arranged in the positioning element (43).

5. Single crystal furnace according to claim 4, characterized in that the first power element (41) is coaxially connected to one of the two rotary shafts (42) at the end remote from the pulling chamber (1).

6. The single crystal furnace according to claim 4, wherein a seed crystal pulling mechanism (2) is provided above the pulling chamber (1), and a dome chamber and a main furnace chamber are provided in this order below the pulling chamber (1), and the main furnace chamber externally surrounds the superconducting magnetic field.

7. The single crystal furnace as claimed in claim 6, characterized in that a seed chuck is connected to the seed crystal pulling mechanism (2) through a molybdenum wire, and a seed crystal/single crystal silicon rod (6) is mounted on the seed chuck in the pulling chamber (1).

8. Single crystal furnace according to claim 1, characterized in that the outer wall of the pulling chamber (1) is further provided with a connecting assembly (3).

9. A method for measuring a silicon single crystal rod by using the single crystal furnace as claimed in claim 7, characterized by comprising the following steps:

step 1: after the silicon single crystal rod (6) is cooled in the traction chamber (1), opening the traction chamber (1) and controlling the silicon single crystal rod to move upwards;

step 2: stopping the traction chamber (1), and enabling the first power element (41) to act to enable the single crystal silicon rod transfer protection component (4) to rotate to a vertical state;

and step 3: the seed crystal pulling mechanism (2) controls the single crystal silicon rod (6) to descend to the bottom end of the single crystal silicon rod to enter the positioning element (43) and contact with the flexible buffer element (44), and then the single crystal silicon rod (6) stops descending;

and 4, step 4: the single crystal silicon rod (6) is moved to a single crystal silicon rod taking-out/measuring area together with the traction chamber (1) under the protection of the single crystal silicon rod transfer protection component (4);

and 5: when the single crystal silicon rod (6) reaches a single crystal silicon rod taking-out/measuring area, the single crystal silicon rod (6) is controlled to ascend to the inside of the traction chamber (1) through the seed crystal pulling mechanism (2), and the power element I (41) acts to enable the single crystal silicon rod transfer protection component (4) to rotate to an initial position;

step 6: the second power element (51) acts to enable the scanning element (54) to move downwards along the guide rail (52) together with the moving element (53), the scanning element (54) stops when the upper edge of the scanning element (54) is not higher than the lower edge of the traction chamber (1), and then the scanning element (54) is started;

and 7: the seed crystal pulling mechanism (2) is used for controlling the single crystal silicon rod (6) to descend at a constant speed and enabling the whole single crystal silicon rod to stop after passing through the scanning element (54), and data acquisition of the scanning element (54) on the single crystal silicon rod (6) is completed.

10. The method of claim 9, further comprising the steps of: and after the data acquisition of the scanning element (54) to the single crystal silicon rod (6) is completed, the scanning element (54) is closed, and the second power element (51) acts to enable the scanning element (54) to jointly move upwards along the guide rail (52) along with the moving element (53) until the lower edge of the scanning element (54) is not lower than that of the traction chamber (1) and then stops.

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