CN111403494A - Back electrode structure, solar cell and preparation method of back electrode structure - Google Patents

Back electrode structure, solar cell and preparation method of back electrode structure Download PDF

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CN111403494A
CN111403494A CN201811624603.3A CN201811624603A CN111403494A CN 111403494 A CN111403494 A CN 111403494A CN 201811624603 A CN201811624603 A CN 201811624603A CN 111403494 A CN111403494 A CN 111403494A
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layer
back electrode
electrode film
film layer
hole
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李新连
赵树利
杨立红
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Shanghai zuqiang Energy Co.,Ltd.
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Beijing Apollo Ding Rong Solar Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
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Abstract

The invention discloses a back electrode structure, which belongs to the technical field of solar cells and comprises: a back electrode film layer (21) and a passivation layer (23) which are arranged in a stacked manner; a plurality of first through holes (231) are formed in the passivation layer (23), and the first through holes (231) penetrate through the passivation layer (23). This back electrode structure sets up the passivation layer through improving the structure on the back electrode rete, has passivated the contact interface between back electrode rete and the absorbed layer, has reduced the interface complex, has avoided open circuit voltage to descend, simultaneously, through being formed with a plurality of first through-holes on the passivation layer for the back electrode rete exposes, has realized the electric contact between back electrode rete and the absorbed layer.

Description

Back electrode structure, solar cell and preparation method of back electrode structure
Technical Field
The invention relates to the technical field of solar cells, in particular to a back electrode structure, a solar cell and a preparation method thereof.
Background
The CIGS thin-film solar cell has the advantages of strong light absorption capacity, low manufacturing cost, flexibility, stable power generation, environmental friendliness and the like, and is one of the most possible materials for replacing silicon cells in the future. The current CIGS cell laboratory maximum conversion efficiency has exceeded 22%.
In the CIGS cell technology, an ultra-thin CIGS (300-800 nm) cell is one of important research directions. The reasons are mainly as follows: (1) reducing the thickness of the CIGS film layer is an important way to reduce the cost, and particularly, the amount of key materials such as In and Ga can be reduced. (2) The coating time of the ultrathin CIGS is short, the production beat is fast, and the production cost (the expenditure of equipment and other materials) is reduced. (3) CIGS generally has more composite defects, when the film layer is thicker, carriers flow through the CIGS film layer for a long distance to generate larger composite loss, and the ultrathin CIGS has the same thickness and the same width of a depletion region, so that the composite loss of a neutral region can be greatly reduced.
However, the ultra-thin CIGS cell in the prior art has the following disadvantages:
1. the interfacial recombination of Mo with CIGS is high, resulting in a drop in open circuit voltage.
2. Thinner CIGS do not absorb light sufficiently, resulting in limited conversion efficiency.
Disclosure of Invention
Objects of the invention
The invention aims to provide a back electrode structure, a solar cell and a preparation method of the back electrode structure.
(II) technical scheme
To solve the above problems, a first aspect of the present invention provides a back electrode structure, comprising: the back electrode film layer and the passivation layer are arranged in a stacked mode; a plurality of first through holes are formed in the passivation layer, and the first through holes penetrate through the passivation layer.
Furthermore, a contact pit or a contact hole penetrating through the back electrode film layer is formed on the back electrode film layer at a position corresponding to the first through hole.
Further, the back electrode structure further includes: a reflective layer disposed between the back electrode film layer and the passivation layer; the reflecting layer is provided with a second through hole at a position corresponding to the first through hole.
Further, the first through holes are distributed in a matrix.
Further, the first through-hole has a circular cross-section, and the first through-hole has a diameter in the range of 5 to 30 μm.
Further, the distance between the edges of two adjacent first through holes ranges from 5 to 20 μm.
Further, the cross section of the first through hole is any one of a circle, an arc or a polygon.
Further, the material of the back electrode film layer is molybdenum, and the thickness is 200-800 nm; and/or the material of the reflecting layer is aluminum, the material of the passivation layer is aluminum oxide, and the sum of the thicknesses of the reflecting layer and the passivation layer is 20-50nm, wherein the thickness of the passivation layer is 20-40 nm.
According to another aspect of the present invention, there is provided a solar cell including the back electrode structure described above, further including: an absorber layer over the back electrode structure; the absorption layer is in electrical contact with the back electrode film layer through the plurality of first through holes.
Furthermore, a plurality of convex parts matched with the first through hole in shape are formed on one side of the absorption layer; the protruding part penetrates through the first through hole, and the top and/or the side wall of the protruding part is in electric contact with the back electrode film layer.
Further, the absorption layer is a CIGS thin film, and the thickness is 300-800 nm.
According to still another aspect of the present invention, there is provided a method of manufacturing a solar cell, including: forming a back electrode film layer and a passivation layer on a substrate; a plurality of first through holes are formed in the passivation layer.
Further, after forming the back electrode film layer and before forming the passivation layer, the method further includes: forming a reflective layer on the back electrode film layer; and forming a plurality of first through holes on the passivation layer, and forming second through holes at the positions of the reflection layer corresponding to the first through holes.
Further, the first through hole and the second through hole are formed by etching through a laser etching process.
Further, the preparation method of the solar cell further comprises the following steps: forming an absorption layer on the surface of the passivation layer; and performing a process including sequentially forming a buffer layer, an intrinsic layer and an electrode layer on the surface of the absorption layer to obtain the solar cell.
(III) advantageous effects
The technical scheme of the invention has the following beneficial technical effects:
1. according to the back electrode structure, the structure of the back electrode structure is improved, the passivation layer is arranged on the back electrode film layer, the contact interface between the back electrode film layer and the absorption layer is passivated, interface recombination is reduced, open-circuit voltage reduction is avoided, meanwhile, the back electrode film layer is exposed through the plurality of first through holes formed in the passivation layer, and electric contact between the back electrode film layer and the absorption layer is achieved; the technical problem of the prior art that the open-circuit voltage is reduced due to the fact that the back electrode film layer is in surface contact with the absorption layer and the interface is large in recombination is solved.
2. The back electrode structure provided by the invention has the advantages that the reflectivity of the surface of the back electrode structure is improved by arranging the reflecting layer, and the reflecting layer reflects the light rays passing through the absorbing layer back to the absorbing layer, so that the absorption efficiency of the absorbing layer to the light rays is improved; the second through hole is formed in the position, corresponding to the first through hole, of the reflecting layer, so that the back electrode film layer is exposed, and the electric contact between the back electrode film layer and the absorbing layer is achieved.
3. According to the solar cell provided by the invention, by adopting the back electrode structure, as the structure of the back electrode structure is improved, the passivation layer is arranged on the back electrode film layer, the contact interface between the back electrode film layer and the absorption layer is passivated, the interface recombination is reduced, the open-circuit voltage drop is avoided, and meanwhile, the back electrode film layer is exposed by forming the plurality of first through holes on the passivation layer, so that the electric contact between the back electrode film layer and the absorption layer is realized; meanwhile, the reflectivity of the surface of the back electrode is improved by arranging the reflecting layer, and the light rays passing through the absorbing layer are reflected back to the absorbing layer by the reflecting layer, so that the absorption efficiency of the absorbing layer to the light rays is increased.
4. The solar cell prepared by the preparation method of the solar cell provided by the invention has the advantages that as the structure of the back electrode structure is improved, the passivation layer is arranged on the back electrode film layer, the contact interface between the back electrode film layer and the absorption layer is passivated, the interface recombination is reduced, the open-circuit voltage drop is avoided, and meanwhile, the back electrode film layer is exposed by forming the plurality of first through holes on the passivation layer, so that the electric contact between the back electrode film layer and the absorption layer is realized; meanwhile, the reflectivity of the surface of the back electrode is improved by arranging the reflecting layer, and the light rays passing through the absorbing layer are reflected back to the absorbing layer by the reflecting layer, so that the absorption efficiency of the absorbing layer to the light rays is increased.
Drawings
FIG. 1 is a cross-sectional view of a back electrode structure provided in one embodiment of the first embodiment of the present invention;
FIG. 2 is a top view of the back electrode structure of FIG. 1;
FIG. 3 is a cross-sectional view of a back electrode structure provided in another embodiment of the first embodiment of the present invention;
FIG. 4 is a cross-sectional view of a back electrode structure provided in one embodiment of example two of the present invention;
FIG. 5 is a cross-sectional view of a back electrode structure provided in another embodiment of example two of the present invention;
FIG. 6 is a cross-sectional view of a back electrode structure provided in one embodiment of example III of the present invention;
FIG. 7 is a cross-sectional view of a back electrode structure provided in another embodiment of example III of the present invention;
fig. 8 is a cross-sectional view of a solar cell provided in accordance with a fourth embodiment of the present invention;
fig. 9 is a cross-sectional view of a solar cell provided in a fifth embodiment of the present invention;
fig. 10 is a cross-sectional view of a solar cell provided in a sixth embodiment of the present invention;
fig. 11 is a flowchart of a method for manufacturing a solar cell according to an embodiment of the seventh embodiment of the present invention;
fig. 12 is a flowchart of a method for manufacturing a solar cell according to another embodiment of example seven of the present invention;
fig. 13 is a flowchart of a method for manufacturing a solar cell according to still another embodiment of example seven of the present invention;
fig. 14 is a flowchart of a method for manufacturing a solar cell according to still another embodiment of example seven of the present invention.
Reference numerals:
1. the semiconductor device comprises a substrate, 2, a back electrode structure, 21, a back electrode film layer, 211, a contact pit, 212, a contact hole, 22, a reflecting layer, 221, a second through hole, 23, a passivation layer, 231, a first through hole, 3, an absorption layer, 31, a protruding part, 4, a buffer layer, 5, an intrinsic layer, 6 and an electrode layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
Example one
Fig. 1 is a cross-sectional view of a back electrode structure according to an embodiment of the first embodiment of the present invention.
Fig. 2 is a top view of the back electrode structure of fig. 1.
Referring to fig. 1 and fig. 2, in an embodiment of the first embodiment of the present invention, a back electrode structure 2 is provided, which includes: the back electrode film layer 21 and the passivation layer 23 are stacked, a plurality of first through holes 231 are formed in the passivation layer 23, and the first through holes 231 penetrate through the passivation layer 23.
Optionally, the plurality of first through holes 231 are uniformly distributed on the passivation layer 23, so that the surface of the back electrode film layer 21 is uniformly exposed, and thus the electrical contact between the back electrode film layer 21 and the absorption layer is uniformly distributed.
Optionally, the material of the back electrode film layer 21 is molybdenum (Mo), and the thickness is 200-800 nm. The back electrode film layer 21 is too thick, the cost is high, and the stress deformation of the film layer is increased; the back electrode film layer 21 is too thin and poor in conductivity; the back electrode film 21 has the thickness range, so that the cost and the stress of the back electrode film 21 can be controlled, and the conductivity of the back electrode film 21 is ensured.
Optionally, the thickness of the back electrode film 21 is 300nm, and the back electrode film 21 takes this thickness value, which can not only control the cost and stress of the back electrode film 21, but also ensure the conductivity of the back electrode film 21.
According to the back electrode structure, through the improvement of the structure, the passivation layer 23 is arranged on the back electrode film layer 21, so that the contact interface between the back electrode film layer 21 and the absorption layer is passivated, the interface recombination is reduced, the drop of open-circuit voltage is avoided, meanwhile, the surface of the back electrode film layer 21 is exposed through the plurality of first through holes 231 formed in the passivation layer 23, and the electric contact between the back electrode film layer 21 and the absorption layer is realized; the technical problem of reduction of open-circuit voltage caused by high interface recombination due to surface contact of the back electrode film layer 21(Mo) and the absorption layer (CIGS) in the prior art is solved.
Optionally, the first through holes 231 are distributed in a matrix. However, the invention is not limited thereto, and the plurality of first through holes 231 may be distributed regularly in other manners.
The first through-hole 231 has a circular cross-section, and the diameter of the first through-hole 231 is in the range of 5 to 30 μm. The diameter of the first through hole 231 is too small, which is difficult to realize, and the density of the circular holes is increased, which results in large contact surface and large interface composition; the first through-hole 231 has a too large diameter, and since the free path of carriers in the CIGS cell is in the order of micrometers, it is difficult for the current at the center of the first through-hole 231 to be transmitted into the back electrode film layer 21. However, the present invention is not limited thereto, and the first through hole 231 may be any one of an arc-shaped hole and a polygonal hole.
The distance between the edges of two adjacent first through holes 231 ranges from 5 μm to 20 μm. If the distance is too small, the density of the first through holes 231 is increased, which results in a large contact area and a large interface recombination; this distance is too large, since the free path of the carriers in the CIGS cell is on the order of microns, resulting in current not being transported so far and being scattered.
Fig. 3 is a cross-sectional view of a back electrode structure according to another embodiment of the first embodiment of the present invention.
Referring to fig. 3, in another embodiment of the first embodiment of the present invention, the back electrode structure 2 further includes: a reflective layer 22.
The reflective layer 22 is disposed between the back electrode film layer 21 and the passivation layer 23, and forms a second through hole 221 at a position corresponding to the first through hole 231.
Optionally, the shape of the second through hole 221 matches the shape of the first through hole 231.
Optionally, the material of the reflective layer 22 is aluminum (Al), and the material of the passivation layer 23 is aluminum oxide (Al)2O3) The sum of the thicknesses of the reflective layer 22 and the passivation layer 23 is 20-50nm, wherein the thickness of the passivation layer 23 is 20-40 nm.
Optionally, the thickness of the reflective layer 22 is 30nm, and the thickness of the passivation layer 23 is 20 nm.
Alternatively, the aluminum of the reflective layer 22 is obtained by plating, and the aluminum oxide of the passivation layer 23 is obtained by oxidizing aluminum of the reflective layer 22 by passing oxygen therethrough. The sum of the thicknesses of the reflective layer 22 and the passivation layer 23 is too thin, so that the reflective layer 22 cannot be formed during film coating, and too thick results in more metal Al remaining after oxidation, while the metal Al is easily corroded during CIGS deposition, and all the reflective layers 22 to be plated are controlled to be as thin as possible. The thickness of the passivation layer 23 depends on the oxidation degree of the reflective layer 22, and the metal Al of the reflective layer 22 is controlled to be oxidized as much as possible while maintaining a certain metal reflection.
This back electrode structure is through setting up reflection stratum 22, the reflectivity on 2 surfaces of back electrode structure has been improved, this reflection stratum 22 is through in the light that will pass the absorbed layer reflects the absorbed layer again, the absorbed efficiency of absorbed layer to light has been increased, the unable abundant absorbed light of thin absorbed layer (CIGS for short) among the prior art has been solved, the light that passes the absorbed layer reaches the molybdenum layer surface, because Mo surface reflectivity is low, can't reflect light back again in the absorbed layer, lead to great light absorption loss, thereby lead to the limited technical problem of conversion efficiency. Meanwhile, the second through-hole 221 is formed in the reflective layer 22 at a position corresponding to the first through-hole 231, so that the surface of the back electrode film layer 21 is exposed, and electrical contact between the back electrode film layer 21 and the absorption layer is achieved.
Example two
Fig. 4 is a cross-sectional view of a back electrode structure according to an embodiment of the second embodiment of the present invention.
Referring to fig. 4, the difference between the first embodiment and the second embodiment is that the structure of the back electrode film layer 21 is different, and in one embodiment of the second embodiment of the present invention, the back electrode film layer 21 has a contact pit 211 formed at a position corresponding to the first through hole 231.
Alternatively, the shape of the contact pit 211 matches the shape of the first through hole 231.
Specifically, the contact pit 211 is formed at a side of the back electrode film layer 21 close to the passivation layer 23 and has a certain depth, and the back electrode film layer 21 is in electrical contact with the absorption layer through a sidewall and a bottom of the contact pit 211. Here, the depth of the contact pit 211 is not particularly limited, and it is sufficient that the back electrode film layer 21 and the absorption layer can be electrically contacted.
Fig. 5 is a cross-sectional view of a back electrode structure according to another embodiment of the second embodiment of the present invention.
Referring to fig. 5, in another implementation manner of the second embodiment of the present invention, the method further includes: in the reflective layer 22, in the present embodiment, the reflective layer 22 and the second through hole 221 on the reflective layer 22 are the same as those in the first embodiment, and are not described herein again.
In the present embodiment, the shapes of both second through-hole 221 and contact pit 211 match the shape of first through-hole 231.
The structure, position and connection relationship of other parts in this embodiment are the same as those in the first embodiment, and are not described herein again.
EXAMPLE III
Fig. 6 is a cross-sectional view of a back electrode structure according to an embodiment of the second embodiment of the present invention.
Referring to fig. 6, the difference between the present embodiment and the first and second embodiments is that the structure of the back electrode film layer 21 is different, and in one embodiment of the third embodiment of the present invention, the back electrode film layer 21 is formed with a contact hole 212 penetrating through the back electrode film layer 21 at a position corresponding to the first through hole 231.
Optionally, the shape of the contact hole 212 matches the shape of the first through hole 231.
Specifically, the contact hole 212 penetrates the back electrode film layer 21, and the back electrode film layer 21 makes electrical contact with the absorption layer through the sidewall of the contact hole 212.
Fig. 7 is a cross-sectional view of a back electrode structure according to another embodiment of the third embodiment of the present invention.
Referring to fig. 7, in another implementation manner of the third embodiment of the present invention, the method further includes: in the reflective layer 22, in the present embodiment, the reflective layer 22 and the second through hole 221 on the reflective layer 22 are the same as those in the first and second embodiments, and are not described again.
In the present embodiment, the shapes of the second through-hole 221 and the contact hole 212 are matched to the shape of the first through-hole 231.
The structure, position, and connection relationship of other parts in this embodiment are the same as those in the first and second embodiments, and are not described again here.
Example four
Fig. 8 is a cross-sectional view of a solar cell provided in a fourth embodiment of the present invention.
Referring to fig. 8, a cross-sectional view of a solar cell according to a fourth embodiment of the present invention includes the back electrode structure 2 according to the first embodiment, and further includes: an absorption layer 3.
An absorption layer 3 is located above the back electrode structure 2.
Optionally, the back electrode structure 2 includes a back electrode film layer 21 and a passivation layer 23 stacked on each other, and the absorption layer 3 is in electrical contact with the back electrode film layer 21 through the first through holes 231.
Optionally, the back electrode structure 2 further includes a reflective layer 22 disposed between the back electrode film layer 21 and the passivation layer 23, and the absorption layer 3 is in electrical contact with the back electrode film layer 21 through the plurality of first through holes 231 and the second through holes 221.
Among them, a plurality of protrusions 31 matching the shape of the first through-holes 231 are formed on one side of the absorption layer 3.
Alternatively, the back electrode structure 2 includes a back electrode film layer 21 and a passivation layer 23 stacked, the protruding portion 31 passes through the first through hole 231, and the top of the protruding portion 31 is electrically contacted to the back electrode film layer 21. Specifically, the height of the protrusion 31 matches the depth of the first through hole 231 (i.e., the thickness of the passivation layer 23).
Optionally, the back electrode structure 2 further includes a reflective layer 22 disposed between the back electrode film layer 21 and the passivation layer 23, the protrusion 31 passes through the first through hole 231 and the second through hole 221, and a top of the protrusion 31 is in electrical contact with the back electrode film layer 21. Specifically, the height of the protrusion 31 matches the sum of the depth of the first through hole 231 (i.e., the thickness of the passivation layer 23) and the depth of the second through hole 221 (i.e., the thickness of the reflective layer 22).
Specifically, the absorption layer 3 is located on one side of the passivation layer 23 away from the back electrode film layer 21, and a plurality of protruding portions 31 matching the shape of the first through holes 231 are formed at positions corresponding to the plurality of first through holes 231, that is, at one side of the absorption layer 3 close to the back electrode film layer 21; the top of the projection 31 abuts against the surface of the back electrode film layer 21 so that the back electrode film layer 21 is in electrical contact with the absorption layer 3. The side of the absorption layer 3 far away from the back electrode film layer 21 is formed with a plurality of concave parts, the positions of the plurality of concave parts correspond to the positions of the plurality of convex parts 31, the plurality of concave parts form a light trapping structure on the surface of the absorption layer 3, and the light absorption rate of the absorption layer 3 is improved.
Optionally, the absorption layer 3 is a CIGS thin film with a thickness of 300-800 nm. The CIGS thin film is too thin to form an effective PN junction, and the CIGS thin film is too thick and does not belong to the technical field of ultra-thin.
Optionally, the thickness of the absorption layer 3 is 500 nm.
Optionally, the solar cell further comprises: and the substrate 1 is positioned on one side of the back electrode film layer 21 far away from the passivation layer 23.
Alternatively, the material of the substrate 1 includes, but is not limited to, glass.
Optionally, the solar cell further comprises: a buffer layer 4, an intrinsic layer 5 and an electrode layer 6.
The buffer layer 4, the intrinsic layer 5 and the electrode layer 6 are stacked on the side of the absorption layer 3 away from the passivation layer 23.
Optionally, the buffer layer 4 is made of cadmium sulfide (CdS).
Optionally, the material of the intrinsic layer 5 is intrinsic zinc oxide (i-ZnO).
Optionally, the material of the electrode layer 6 is an aluminum-doped zinc oxide transparent conductive film (AZO).
Optionally, the solar cell is a thin film solar cell.
In the solar cell in the embodiment, by adopting the back electrode structure 2 in the first embodiment, since the structure of the back electrode structure 2 is improved, the passivation layer 23 is arranged on the back electrode film layer 21, the contact interface between the back electrode film layer 21 and the absorption layer 3 is passivated, the interface recombination is reduced, the open-circuit voltage drop is avoided, and meanwhile, the back electrode film layer 21 is exposed by forming the plurality of first through holes 231 on the passivation layer 23, so that the electrical contact between the back electrode film layer 21 and the absorption layer 3 is realized; the technical problem of reduction of open-circuit voltage caused by large interface recombination due to surface contact of the back electrode film layer 21 and the absorption layer 3 in the prior art is solved. The reflection layer 22 is arranged, so that the reflectivity of the surface of the back electrode structure 2 is improved, and the reflection layer 22 reflects the light rays passing through the absorption layer 3 back to the absorption layer 3, so that the absorption efficiency of the absorption layer 3 to the light rays is improved; by forming the second through-hole 221 on the reflection layer 22 at a position corresponding to the first through-hole 231 such that the back electrode film layer 21 is exposed, electrical contact between the back electrode film layer 21 and the absorption layer 3 is achieved.
EXAMPLE five
Fig. 9 is a cross-sectional view of a solar cell provided in a fifth embodiment of the present invention.
Referring to fig. 9, the difference between the present embodiment and the fourth embodiment is that the solar cell provided by the present embodiment adopts the back electrode structure 2 of the second embodiment, and the back electrode film layer 21 of the back electrode structure 2 is formed with a contact pit 211 at a position corresponding to the first through hole 231.
Alternatively, the back electrode structure 2 includes a back electrode film layer 21 and a passivation layer 23 stacked, the protruding portion 31 passes through the first through hole 231, and the top and the sidewall of the protruding portion 31 are electrically contacted with the bottom and the sidewall of the contact pit 211 of the back electrode film layer 21, respectively. Specifically, the height of the protruding portion 31 matches the sum of the depth of the first through hole 231 (i.e., the thickness of the passivation layer 23) and the depth of the contact pit 211.
Optionally, the back electrode structure 2 further includes a reflective layer 22 disposed between the back electrode film layer 21 and the passivation layer 23, the protruding portion 31 passes through the first through hole 231 and the second through hole 221, and a top and a sidewall of the protruding portion 31 are in electrical contact with a bottom and a sidewall of the contact pit 211 of the back electrode film layer 21, respectively. Specifically, the height of the protruding portion 31 matches the sum of the depth of the first through hole 231 (i.e., the thickness of the passivation layer 23), the depth of the second through hole 221 (i.e., the thickness of the reflective layer 22), and the depth of the contact pit 211.
Alternatively, the top and sidewalls of the protrusion 31 abut against the bottom and sidewalls of the contact pit 211 of the back electrode film layer 21, respectively, to make electrical contact.
The structure, position, and connection relationship of other parts in this embodiment are the same as those in the fourth embodiment, and are not described herein again.
EXAMPLE six
Fig. 10 is a cross-sectional view of a solar cell according to a sixth embodiment of the present invention.
Referring to fig. 10, the difference between the present embodiment and the fourth and fifth embodiments is that the solar cell provided by the present embodiment adopts the back electrode structure 2 of the third embodiment, and the back electrode film layer 21 of the back electrode structure 2 is formed with the contact hole 212 at the position corresponding to the first through hole 231.
Alternatively, the back electrode structure 2 includes a back electrode film layer 21 and a passivation layer 23 stacked, the protrusion 31 passes through the first through hole 231, and a sidewall of the protrusion 31 is electrically contacted with a sidewall of the contact hole 212 of the back electrode film layer 21. The height of the protrusion 31 is matched to the sum of the depth of the first through hole 231 (i.e., the thickness of the passivation layer 23) and the depth of the contact hole 212.
Optionally, the back electrode structure 2 further includes a reflective layer 22 disposed between the back electrode film layer 21 and the passivation layer 23, the protrusion 31 passes through the first through hole 231 and the second through hole 221, and a sidewall of the protrusion 31 is in electrical contact with a sidewall of the contact hole 212 of the back electrode film layer 21. Specifically, the height of the protrusion 31 matches the sum of the depth of the first through hole 231 (i.e., the thickness of the passivation layer 23), the depth of the second through hole 221 (i.e., the thickness of the reflective layer 22), and the depth of the contact hole 212.
Alternatively, the side wall of the protruding portion 31 abuts against the side wall of the contact hole 212 of the back electrode film layer 21 to make electrical contact.
The structure, position, and connection relationship of other parts in this embodiment are the same as those in the fourth embodiment, and are not described herein again.
EXAMPLE seven
Fig. 11 is a flowchart of a method for manufacturing a solar cell according to an embodiment of the seventh embodiment of the present invention.
Referring to fig. 11, in an embodiment of the seventh embodiment of the present invention, a method for manufacturing a solar cell is provided, including:
s100, a back electrode film layer 21 and a passivation layer 23 are formed on the substrate 1.
When the back electrode structure 2 includes the back electrode film layer 21 and the passivation layer 23, the step S100 includes:
s101, a back electrode film layer 21 is formed on the substrate 1.
S103a, a passivation layer 23 is formed on the back electrode film layer 21.
Optionally, a back electrode film layer 21 is deposited on the substrate 1 by a magnetron sputtering method on the substrate 1.
Alternatively, the material of the substrate 1 includes, but is not limited to, glass.
Optionally, the material of the back electrode film layer 21 is molybdenum (Mo), and the thickness is 200-800 nm.
Optionally, the thickness of the back electrode film layer 21 is 300 nm.
S200a, a plurality of first through holes 231 are formed on the passivation layer 23.
Fig. 12 is a flowchart of a method for manufacturing a solar cell according to another embodiment of the seventh embodiment of the present invention.
Referring to fig. 12, in another implementation manner of the seventh embodiment of the present invention, the back electrode structure 2 further includes a reflective layer 22, and in step S100, after forming the back electrode film layer 21, before forming the passivation layer 23, that is, after step S101, the method further includes the steps of:
s102, the reflective layer 22 is formed on the back electrode film layer 21.
S103b, a passivation layer 23 is formed on the reflective layer 22.
Since the reflective layer 22 is added, step S103a is modified to step S103 b.
Meanwhile, the modification of step S200a is to step S200b, in which a plurality of first through holes 231 are formed in the passivation layer 23, and second through holes 221 are also formed at positions of the reflective layer 22 corresponding to the first through holes 231.
Optionally, the first through hole 231 and the second through hole 221 are formed by etching through a laser etching process.
Optionally, the reflective layer 22 is plated on the back electrode film layer 21 by magnetron sputtering or evaporation.
Optionally, the material of the reflective layer 22 is aluminum (Al), and the material of the passivation layer 23 is aluminum oxide (Al)2O3) The sum of the thicknesses of the reflective layer 22 and the passivation layer 23 is 20-50nm, wherein the thickness of the passivation layer 23 is 20-40 nm.
Since the aluminum of the reflective layer 22 is obtained by plating, the aluminum oxide of the passivation layer 23 is obtained by oxidizing the aluminum of the reflective layer 22 by passing oxygen. The sum of the thicknesses of the reflective layer 22 and the passivation layer 23 is too thin, so that the reflective layer 22 cannot be formed during film coating, and too thick results in more metal Al remaining after oxidation, while the metal Al is easily corroded during CIGS deposition, and all the reflective layers 22 to be plated are controlled to be as thin as possible. The thickness of the passivation layer 23 depends on the oxidation degree of the reflective layer 22, and the metal Al of the reflective layer 22 is controlled to be oxidized as much as possible while maintaining a certain metal reflection.
In this embodiment, the method for manufacturing a solar cell further includes:
and S300, forming the absorption layer 3 on the surface of the passivation layer 23.
In step S300, an absorption layer 3 is formed on the surface of the passivation layer 23 by a co-evaporation method or a selenization method after sputtering, and a plurality of protrusions 31 matching the shape of the first through holes 231 are formed at positions of the absorption layer 3 corresponding to the plurality of first through holes 231.
Optionally, the absorption layer 3 is a CIGS thin film with a thickness of 300-800 nm.
Optionally, the thickness of the absorption layer 3 is 500 nm.
S400, a process including sequentially forming the buffer layer 4, the intrinsic layer 5, and the electrode layer 6 on the surface of the absorption layer 3 is performed to obtain a solar cell.
Optionally, a chemical water bath method is adopted to prepare the buffer layer 4, then the intrinsic layer 5 and the electrode layer 6 are sequentially deposited by a magnetron sputtering method, and finally a p-n junction structure is formed, so that the power generation function of the solar cell is realized.
Optionally, the buffer layer 4 is made of cadmium sulfide (CdS).
Optionally, the material of the intrinsic layer 5 is intrinsic zinc oxide (i-ZnO).
Optionally, the material of the electrode layer 6 is an aluminum-doped zinc oxide transparent conductive film (AZO).
The above-described manufacturing method is applicable to the manufacturing of the solar cell in the fourth embodiment (corresponding to the back electrode structure 2 in the first embodiment), and the manufacturing methods of the solar cells in the fifth embodiment and the sixth embodiment are different from the manufacturing method of the solar cell in the fourth embodiment in the manufacturing method of the back electrode structure 2.
Fig. 13 is a flowchart of a method for manufacturing a solar cell according to still another embodiment of example seven of the present invention.
Referring to fig. 13, since the back electrode film layer 21 of the fifth embodiment is provided with the contact pits 211, the back electrode film layer 21 of the sixth embodiment is provided with the contact holes 212.
When the back electrode structure 2 includes the back electrode film layer 21 and the passivation layer 23, the above step S200a should be modified to step S200c, in which the contact pits 211 or the contact holes 212 are formed on the back electrode film layer 21 at positions corresponding to the first through holes 231 while the plurality of first through holes 231 are formed on the passivation layer 23.
Specifically, in the preparation of the solar cell in the fifth embodiment (corresponding to the back electrode structure 2 in the second embodiment), the contact pits 211 are formed on the back electrode film layer 21 at positions corresponding to the first through holes 231, while the plurality of first through holes 231 are formed on the passivation layer 23. In the preparation of the solar cell in the sixth embodiment (corresponding to the back electrode structure 2 in the third embodiment), the contact hole 212 is formed on the back electrode film layer 21 at a position corresponding to the first through hole 231 while the plurality of first through holes 231 are formed on the passivation layer 23.
Fig. 14 is a flowchart of a method for manufacturing a solar cell according to still another embodiment of example seven of the present invention.
Referring to fig. 14, since the back electrode film layer 21 of the fifth embodiment is provided with the contact pits 211, the back electrode film layer 21 of the sixth embodiment is provided with the contact holes 212.
When the back electrode structure 2 further includes the reflective layer 22, the above step S200a should be modified to step S200d, in which a plurality of first through holes 231 are formed on the passivation layer 23, and at the same time, second through holes 221 are formed at positions corresponding to the first through holes 231 on the reflective layer 22 and contact pits 211 or contact holes 212 are formed at positions corresponding to the first through holes 231 on the back electrode film layer 21.
Specifically, in the preparation of the solar cell in the fifth embodiment (corresponding to the back electrode structure 2 in the second embodiment), a plurality of first through holes 231 are formed on the passivation layer 23, and at the same time, second through holes 221 are formed at positions corresponding to the first through holes 231 on the reflective layer 22 and contact pits 211 are formed at positions corresponding to the first through holes 231 on the back electrode film layer 21. In the preparation of the solar cell in the sixth embodiment (corresponding to the back electrode structure 2 in the third embodiment), a plurality of first through holes 231 are formed on the passivation layer 23, and at the same time, second through holes 221 are formed at positions corresponding to the first through holes 231 on the reflective layer 22 and contact holes 212 are formed at positions corresponding to the first through holes 231 on the back electrode film layer 21.
Alternatively, the back electrode film layer 21 is etched using a laser to form a plurality of contact pits 211 or contact holes 212 having a certain density thereon.
In the solar cell prepared by the preparation method of the solar cell of the embodiment, because the structure of the back electrode 2 is improved, the passivation layer 23 is arranged on the back electrode film layer 21, the contact interface between the back electrode film layer 21 and the absorption layer 3 is passivated, the interface recombination is reduced, the open-circuit voltage drop is avoided, and meanwhile, the back electrode film layer 21 is exposed by forming the plurality of first through holes 231 on the passivation layer 23, so that the electrical contact between the back electrode film layer 21 and the absorption layer 3 is realized; the technical problem of reduction of open-circuit voltage caused by large interface recombination due to surface contact of the back electrode film layer 21 and the absorption layer 3 in the prior art is solved. The reflection layer 22 is arranged, so that the reflectivity of the surface of the back electrode structure 2 is improved, and the reflection layer 22 reflects the light rays passing through the absorption layer 3 back to the absorption layer 3, so that the absorption efficiency of the absorption layer 3 to the light rays is improved; by forming the second through-hole 221 on the reflection layer 22 at a position corresponding to the first through-hole 231 such that the back electrode film layer 21 is exposed, electrical contact between the back electrode film layer 21 and the absorption layer 3 is achieved.
The invention aims to protect a back electrode structure, a solar cell and a preparation method thereof, and has the following beneficial technical effects:
1. according to the back electrode structure, the structure of the back electrode structure is improved, the passivation layer is arranged on the back electrode film layer, the contact interface between the back electrode film layer and the absorption layer is passivated, interface recombination is reduced, open-circuit voltage reduction is avoided, meanwhile, the back electrode film layer is exposed through the plurality of first through holes formed in the passivation layer, and electric contact between the back electrode film layer and the absorption layer is achieved; the technical problem of the prior art that the open-circuit voltage is reduced due to the fact that the back electrode film layer is in surface contact with the absorption layer and the interface is large in recombination is solved.
2. The back electrode structure provided by the invention has the advantages that the reflectivity of the surface of the back electrode structure is improved by arranging the reflecting layer, and the reflecting layer reflects the light rays passing through the absorbing layer back to the absorbing layer, so that the absorption efficiency of the absorbing layer to the light rays is improved; the second through hole is formed in the position, corresponding to the first through hole, of the reflecting layer, so that the back electrode film layer is exposed, and the electric contact between the back electrode film layer and the absorbing layer is achieved.
3. According to the solar cell provided by the invention, by adopting the back electrode structure, as the structure of the back electrode structure is improved, the passivation layer is arranged on the back electrode film layer, the contact interface between the back electrode film layer and the absorption layer is passivated, the interface recombination is reduced, the open-circuit voltage drop is avoided, and meanwhile, the back electrode film layer is exposed by forming the plurality of first through holes on the passivation layer, so that the electric contact between the back electrode film layer and the absorption layer is realized; meanwhile, the reflectivity of the surface of the back electrode is improved by arranging the reflecting layer, and the light rays passing through the absorbing layer are reflected back to the absorbing layer by the reflecting layer, so that the absorption efficiency of the absorbing layer to the light rays is increased.
4. The solar cell prepared by the preparation method of the solar cell provided by the invention has the advantages that as the structure of the back electrode structure is improved, the passivation layer is arranged on the back electrode film layer, the contact interface between the back electrode film layer and the absorption layer is passivated, the interface recombination is reduced, the open-circuit voltage drop is avoided, and meanwhile, the back electrode film layer is exposed by forming the plurality of first through holes on the passivation layer, so that the electric contact between the back electrode film layer and the absorption layer is realized; meanwhile, the reflectivity of the surface of the back electrode is improved by arranging the reflecting layer, and the light rays passing through the absorbing layer are reflected back to the absorbing layer by the reflecting layer, so that the absorption efficiency of the absorbing layer to the light rays is increased.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.

Claims (11)

1. A back electrode structure for a solar cell, comprising: a back electrode film layer (21) and a passivation layer (23) which are arranged in a stacked manner;
a plurality of first through holes (231) are formed in the passivation layer (23), and the first through holes (231) penetrate through the passivation layer (23).
2. Back electrode structure according to claim 1,
the back electrode film layer (21) is formed with a contact hole (211) or a contact hole (212) penetrating the back electrode film layer (21) at a position corresponding to the first through hole (231).
3. The back electrode structure of claim 1 or 2, further comprising:
a reflective layer (22) disposed between the back electrode film layer (21) and the passivation layer (23);
the reflective layer (22) has a second through-hole (221) formed at a position corresponding to the first through-hole (231).
4. Back electrode structure according to claim 1,
the cross section of the first through hole (231) is circular, and the diameter of the first through hole (231) ranges from 5 to 30 mu m; and/or
The distance between the edges of two adjacent first through holes (231) is in the range of 5-20 μm.
5. Back electrode structure of claim 1, 2 or 4,
the back electrode film layer (21) is made of molybdenum and has the thickness of 200-800 nm; and/or
The material of the reflecting layer (22) is aluminum, the material of the passivation layer (23) is aluminum oxide, the sum of the thicknesses of the reflecting layer (22) and the passivation layer (23) is 20-50nm, and the thickness of the passivation layer (23) is 20-40 nm.
6. A solar cell, comprising a back electrode structure (2) according to any of claims 1-5, further comprising:
an absorbing layer (3) located over the back electrode structure (2);
the absorption layer (3) is in electrical contact with the back electrode film layer (21) through a plurality of first through holes (231).
7. The solar cell of claim 6,
a plurality of convex parts (31) matched with the shape of the first through hole (231) are formed on one side of the absorption layer (3);
the protruding part (31) penetrates through the first through hole (231), and the top and/or the side wall of the protruding part (31) is in electrical contact with the back electrode film layer (21).
8. The solar cell according to claim 6 or 7,
the absorption layer (3) is a CIGS thin film, and the thickness is 300-800 nm.
9. A method for manufacturing a solar cell, comprising:
forming a back electrode film layer (21) and a passivation layer (23) on a substrate (1);
a plurality of first through holes (231) are formed in the passivation layer (23).
10. The method of manufacturing a solar cell according to claim 9, further comprising, after forming the back electrode film layer (21) and before forming the passivation layer (23):
forming a reflective layer (22) on the back electrode film layer (21);
a plurality of first through holes (231) are formed in the passivation layer (23), and second through holes (221) are formed in positions of the reflective layer (22) corresponding to the first through holes (231).
11. The method for manufacturing a solar cell according to claim 9, further comprising:
forming an absorption layer (3) on the surface of the passivation layer (23);
and performing a process comprising a buffer layer (4), an intrinsic layer (5) and an electrode layer (6) which are sequentially formed on the surface of the absorption layer (3) to obtain the solar cell.
CN201811624603.3A 2018-12-28 2018-12-28 Back electrode structure, solar cell and preparation method of back electrode structure Pending CN111403494A (en)

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