CN111384313A - Method for preparing OLED (organic light emitting diode) light emitting device by femtosecond pre-laser transfer technology - Google Patents
Method for preparing OLED (organic light emitting diode) light emitting device by femtosecond pre-laser transfer technology Download PDFInfo
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- CN111384313A CN111384313A CN202010278215.5A CN202010278215A CN111384313A CN 111384313 A CN111384313 A CN 111384313A CN 202010278215 A CN202010278215 A CN 202010278215A CN 111384313 A CN111384313 A CN 111384313A
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000005516 engineering process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000011521 glass Substances 0.000 claims abstract description 55
- 239000000463 material Substances 0.000 claims abstract description 33
- 230000005525 hole transport Effects 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 238000001704 evaporation Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 33
- 239000010409 thin film Substances 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 89
- 239000002346 layers by function Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000003086 colorant Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
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Abstract
The invention discloses a method for preparing an OLED light-emitting device by a femtosecond pre-laser transfer technology, which comprises the following steps of firstly evaporating a hole transport layer HTL on an ITO glass substrate to form an acceptor ITO glass substrate; then preparing a donor ITO glass substrate with a specific pattern of the luminescent layer EML to be transferred; transferring the luminescent layer EML on the donor ITO glass substrate to the hole transport layer HTL in the step S1 by using femtosecond laser pulses; and finally, an electron transport layer ETL and a metal anode Al are evaporated on the transferred light-emitting layer EML. The method can accurately transfer the organic light-emitting functional layer film material to the corresponding substrate in a high resolution and a specific shape under a non-vacuum condition, not only realizes the accurate control of a transfer area, but also has low requirements on processing environment, reduces the cost and simultaneously improves the production efficiency.
Description
Technical Field
The invention relates to the field of laser processing, in particular to a method for preparing an OLED (organic light emitting diode) light emitting device by a femtosecond pre-laser transfer technology.
Background
The full name of the OLED is Organic Light-Emitting Diode, and the Chinese name is Organic Light-Emitting Diode. Compared with the currently widely used flat panel display LCD, the OLED has the characteristics of active light emission, high contrast, ultra-light weight, thinness, low temperature resistance, high response speed, low power consumption, wide viewing angle, strong shock resistance and the like, and is more suitable for flexible display and 3D display.
The scheme for realizing full-color colors of OLED screens in the mainstream OLED preparation process at present is mainly 'evaporation'. The technology used for such vapor deposition is called FMM (fine metal mask plate), which means that in vapor deposition, in order to distinguish pixels, masks are covered, and alignment of the masks and the mask material itself become technical difficulties. The OLED evaporated by adopting the FMM method has good effect, the three primary colors are pure, but the cost is very high. In order to solve the key problem, the vacuum evaporation technology needs to be improved, and a new preparation technology of a thin film material (an organic light emitting functional layer in the case of an OLED) needs to be developed.
Disclosure of Invention
The invention provides a method for preparing an OLED light-emitting device by a femtosecond pre-laser transfer technology, aiming at the defects of the prior art, and the method can transfer an organic light-emitting functional layer film material to a corresponding substrate with high resolution and a specific shape under a non-vacuum condition.
The technical scheme adopted by the invention for solving the technical problems is as follows:
the method for preparing the OLED light-emitting device by the femtosecond pre-laser transfer technology is provided, the prepared OLED light-emitting device comprises an ITO glass substrate, a hole transport layer HTL, a light-emitting layer EML, an electron transport layer ETL and a metal anode Al which are sequentially arranged in a laminated mode from bottom to top, and the method comprises the following steps:
s1, evaporating and plating a hole transport layer HTL on the ITO glass substrate to form an acceptor ITO glass substrate, wherein the thickness of the hole transport layer HTL is 50-80 nm;
s2, preparing a donor ITO glass substrate with a specific pattern of the to-be-transferred luminescent layer EML;
s3, transferring the luminescent layer EML on the donor ITO glass substrate to the hole transport layer HTL in the step S1 by using femtosecond laser pulses, wherein the thickness of the luminescent layer EML is 40-60 nm;
s4, an electron transport layer ETL and a metal anode Al are vapor-plated on the transferred light-emitting layer EML, wherein the thickness of the electron transport layer ETL is 10-20 nm, and the thickness of the metal anode Al is 50-70 nm.
In the above technical solution, the step S2 of preparing the donor ITO glass substrate with the to-be-transferred luminescent layer EML having the specific pattern means: an Al film is firstly evaporated on a donor ITO glass substrate, the thickness of the Al film is 50-70 nm, and then a luminescent layer EML film is evaporated on the Al film, wherein the thickness of the luminescent layer EML film is 40-60 nm.
In step S3, the method for transferring the light emitting layer EML on the donor ITO glass substrate to the hole transport layer HTL in step S1 by using the femtosecond laser pulse includes the following steps:
s31, aligning a light emitting layer EML film of the donor ITO glass substrate with a hole transport layer HTL of the acceptor ITO glass substrate, and adjusting the distance between the light emitting layer EML film and the hole transport layer HTL to be 0-100 um;
s32, adjusting the femtosecond laser to focus laser spots on an EML film interface of a light emitting layer of the donor ITO glass substrate;
s33, adjusting the technological parameters of the femtosecond laser to enable laser spots to continuously scan on the interface of the EML film of the light emitting layer of the donor ITO glass substrate, and completing the transfer of the EML of the light emitting layer of the donor ITO glass substrate.
According to the technical scheme, the light-emitting layer EML thin film material on the donor ITO glass substrate is a red light material, a blue light material or a green light material.
According to the technical scheme, the materials of the hole transport layer HTL and the electron transport layer ETL of the prepared OLED light-emitting device are matched with the material of the EML thin film of the light-emitting layer between the hole transport layer HTL and the electron transport layer ETL.
According to the technical scheme, the process parameters of the femtosecond laser in the step S33 include laser pulse width, laser power, repetition frequency, spot shape, platform scanning speed and filling space, the laser pulse width is 200 fs-5 ps, the laser power is 5-20W, the repetition frequency is 0.2-5 MHz, the spot shape is square, rectangular or pentagonal, the platform scanning speed is 100-10000 mm/S, and the filling space is 2-100 μm.
The invention has the following beneficial effects: according to the method for preparing the OLED light-emitting device by the femtosecond pre-laser transfer technology, the light-emitting layer EML on the donor ITO glass substrate is transferred to the hole transport layer HTL on the acceptor ITO glass substrate by femtosecond laser pulses, and the organic light-emitting function layer thin film material can be accurately transferred to the corresponding substrate in high resolution and specific shape under the non-vacuum condition. The method not only realizes the accurate control of the transfer area, but also has low requirement on the processing environment, reduces the cost and simultaneously improves the production efficiency.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a flow chart of the overall implementation of the method of the present invention;
FIG. 2 is a diagram of the distribution of the materials of the layers of an OLED light-emitting device prepared by the method of the present invention;
FIG. 3 is a diagram showing the distribution of materials of each layer of a donor ITO glass substrate according to the method of the present invention;
FIG. 4 is a schematic view of a femtosecond laser machining scan of the method of the present invention;
FIG. 5 is a top view of a device after laser transfer of a green OLED layer according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, the present invention provides a method for preparing an OLED light emitting device by a femtosecond pre-laser transfer technique, wherein the prepared OLED light emitting device includes an ITO (indium tin oxide semiconductor) glass substrate, a hole transport layer HTL, a light emitting layer EML, an electron transport layer ETL, and a metal anode Al, which are sequentially stacked from bottom to top, and the method includes the following steps:
s1, evaporating and plating a hole transport layer HTL on the ITO glass substrate to form an acceptor ITO glass substrate, wherein the thickness of the hole transport layer HTL is 50-80 nm;
s2, preparing a donor ITO glass substrate with a specific pattern of the to-be-transferred luminescent layer EML;
s3, transferring the luminescent layer EML on the donor ITO glass substrate to the hole transport layer HTL in the step S1 by using femtosecond laser pulses, wherein the thickness of the luminescent layer EML is 40-60 nm;
s4, an electron transport layer ETL and a metal anode Al are vapor-plated on the transferred light-emitting layer EML, wherein the thickness of the electron transport layer ETL is 10-20 nm, and the thickness of the metal anode Al is 50-70 nm.
As a preferred example, the distribution of the materials of each layer of the prepared OLED light-emitting device is shown in FIG. 2, the thicknesses of each layer are respectively that the thickness of a hole transport layer HTL is 60nm, the thickness of an emitting layer EML is 50nm, the thickness of an electron transport layer ETL is 20nm, and the thickness of a metal anode Al is 60 nm.
The invention utilizes the extremely high peak power of the femtosecond laser to heat the metal sacrificial layer to the extremely high temperature in an extremely short time, and generates extremely high pressure intensity in a local range and enables the metal sacrificial layer to expand outwards.
Further, as shown in fig. 3, the preparation of the donor ITO glass substrate with the specific pattern of the to-be-transferred light-emitting layer EML in step S2 means: an Al film is firstly evaporated on a donor ITO glass substrate, the thickness of the Al film is 50-70 nm, and then a luminescent layer EML film is evaporated on the Al film, wherein the thickness of the luminescent layer EML film is 40-60 nm. As a preferred example, the thickness of the EML thin film of the light-emitting layer on the donor ITO glass substrate was 60nm, and the thickness of the Al film was 60 nm. The Al film layer is used as a laser processing sacrificial layer and absorbs laser energy to push out the EML.
Further, the transferring of the light emitting layer EML on the donor ITO glass substrate onto the hole transport layer HTL in step S1 using the femtosecond laser pulse in step S3 includes the steps of:
s31, the light emitting layer EML film of the donor ITO glass substrate is opposite to the hole transport layer HTL of the acceptor ITO glass substrate, and the distance between the light emitting layer EML film of the donor ITO glass substrate and the hole transport layer HTL film of the acceptor ITO glass substrate is adjusted to be the contact between the light emitting layer EML film of the donor ITO glass substrate and the hole transport layer HTL film of the acceptor ITO glass substrate;
s32, adjusting the femtosecond laser to focus laser spots on an EML film interface of a light emitting layer of the donor ITO glass substrate;
s33, adjusting the technological parameters of the femtosecond laser to enable laser spots to continuously scan on the interface of the EML film of the light emitting layer of the donor ITO glass substrate, and completing the transfer of the EML of the light emitting layer of the donor ITO glass substrate.
Fig. 4 is a femtosecond laser processing scanning schematic diagram according to an embodiment of the present invention, in which the shape of a laser spot is changed by an optical diffraction element or other phase or optical field modulation elements, a specific pattern can be designed to transfer an organic light emitting functional material in an OLED to other structure layers with a higher resolution, and the size of a transfer region can be as fine as a micron size, which lays a foundation for realizing RGB color arrangement in an OLED device structure.
Further, the material of the light emitting layer EML thin film on the donor ITO glass substrate is a red light material, a blue light material, or a green light material. In the printing transfer of the luminescent materials in the OLED screen, the replacement process of the luminescent materials with three primary colors can be avoided, the waste of the luminescent materials in the printing process is effectively reduced, and the accurate transfer process of the luminescent materials with different colors in corresponding micro areas is realized.
Furthermore, the materials of the hole transport layer HTL and the electron transport layer ETL of the prepared OLED light-emitting device are matched with the material of the EML thin film of the light-emitting layer between the hole transport layer HTL and the electron transport layer ETL.
Further, the process parameters of the femtosecond laser in step S33 include laser pulse width, laser power, repetition rate, spot shape, stage scanning speed and filling pitch, and as a preferred embodiment, the laser pulse width is in femtosecond mode, the laser power is 7.5-8.5W, the repetition rate is 200kHz, the stage scanning speed is 1000-4000mm/S, and the filling pitch is 12-16 μm. Fig. 5 is a top view of a device after laser transfer of a green OLED prepared with a green material as an emitting layer EML and a rectangular pattern.
According to the invention, the light-emitting layer EML on the donor ITO glass substrate is transferred to the hole transport layer HTL in the step S1 by using femtosecond laser pulses, so that the organic light-emitting function layer thin film material can be accurately transferred to the corresponding substrate in a high resolution and a specific shape under a non-vacuum condition. The method not only realizes the accurate control of the transfer area, but also has low requirement on the processing environment, reduces the cost and simultaneously improves the production efficiency.
It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.
Claims (6)
1. A method for preparing an OLED light-emitting device by a femtosecond pre-laser transfer technology is characterized in that the prepared OLED light-emitting device comprises an ITO glass substrate, a hole transport layer HTL, a light-emitting layer EML, an electron transport layer ETL and a metal anode Al which are sequentially arranged in a laminated mode from bottom to top, and comprises the following steps:
s1, evaporating and plating a hole transport layer HTL on the ITO glass substrate to form an acceptor ITO glass substrate, wherein the thickness of the hole transport layer HTL is 50-80 nm;
s2, preparing a donor ITO glass substrate with a specific pattern of the to-be-transferred luminescent layer EML;
s3, transferring the luminescent layer EML on the donor ITO glass substrate to the hole transport layer HTL in the step S1 by using femtosecond laser pulses, wherein the thickness of the luminescent layer EML is 40-60 nm;
s4, an electron transport layer ETL and a metal anode Al are vapor-plated on the transferred light-emitting layer EML, wherein the thickness of the electron transport layer ETL is 10-20 nm, and the thickness of the metal anode Al is 50-70 nm.
2. The method according to claim 1, wherein the step of preparing the donor ITO glass substrate with the EML to be transferred having a specific pattern in step S2 is that: an Al film is firstly evaporated on a donor ITO glass substrate, the thickness of the Al film is 50-70 nm, and then a luminescent layer EML film is evaporated on the Al film, wherein the thickness of the luminescent layer EML film is 40-60 nm.
3. The method of claim 1, wherein the transferring the light emitting layer EML on the donor ITO glass substrate to the hole transport layer HTL in the step S1 using the femtosecond laser pulse in the step S3 comprises the steps of:
s31, aligning a light emitting layer EML film of the donor ITO glass substrate with a hole transport layer HTL of the acceptor ITO glass substrate, and adjusting the distance between the light emitting layer EML film and the hole transport layer HTL to be 0-100 um;
s32, adjusting the femtosecond laser to focus laser spots on an EML film interface of a light emitting layer of the donor ITO glass substrate;
s33, adjusting the technological parameters of the femtosecond laser to enable laser spots to continuously scan on the interface of the EML film of the light emitting layer of the donor ITO glass substrate, and completing the transfer of the EML of the light emitting layer of the donor ITO glass substrate.
4. The method according to claim 2, wherein the EML thin film material of the light-emitting layer on the donor ITO glass substrate is a red light material, a blue light material or a green light material.
5. The method according to claims 1 and 2, wherein the materials of the hole transport layer HTL and the electron transport layer ETL of the OLED light emitting device are matched with the material of the light emitting layer EML thin film therebetween.
6. The method as claimed in claim 3, wherein the process parameters of the femtosecond laser in the step S33 include a laser pulse width, a laser power, a repetition rate, a spot shape, a stage scanning speed and a filling pitch, the laser pulse width is 200fs to 5ps, the laser power is 5 to 20W, the repetition rate is 0.2 to 5MHz, the spot shape is square, rectangular or pentagonal, the stage scanning speed is 100 to 10000mm/S, and the filling pitch is 2 to 100 μm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116288156A (en) * | 2023-02-16 | 2023-06-23 | 吉林大学 | Laser regulation and control method for phase change process of organic light-emitting molecular film |
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| CN109860391A (en) * | 2018-12-29 | 2019-06-07 | 武汉理工大学 | A kind of processing method using ultrafast laser transfer thin-film material |
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| CN104009059A (en) * | 2013-02-27 | 2014-08-27 | 三星显示有限公司 | Organic light emitting diode display and manufacturing method thereof, and donor substrate |
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| CN116288156A (en) * | 2023-02-16 | 2023-06-23 | 吉林大学 | Laser regulation and control method for phase change process of organic light-emitting molecular film |
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