CN111384313A - Method for preparing OLED (organic light emitting diode) light emitting device by femtosecond pre-laser transfer technology - Google Patents
Method for preparing OLED (organic light emitting diode) light emitting device by femtosecond pre-laser transfer technology Download PDFInfo
- Publication number
- CN111384313A CN111384313A CN202010278215.5A CN202010278215A CN111384313A CN 111384313 A CN111384313 A CN 111384313A CN 202010278215 A CN202010278215 A CN 202010278215A CN 111384313 A CN111384313 A CN 111384313A
- Authority
- CN
- China
- Prior art keywords
- light
- glass substrate
- ito glass
- emitting layer
- eml
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000005516 engineering process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000011521 glass Substances 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 33
- 230000005525 hole transport Effects 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 27
- 238000001704 evaporation Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 abstract description 83
- 239000002346 layers by function Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
本发明公开了一种飞秒激光前转移技术制备OLED发光器件的方法，包括以下步骤，先在ITO玻璃基板上蒸镀空穴传输层HTL，形成受主ITO玻璃基板；然后制备带有特定图案的待转移发光层EML的施主ITO玻璃基板；再利用飞秒激光脉冲将施主ITO玻璃基板上的发光层EML转移到步骤S1中的空穴传输层HTL上；最后在转移的发光层EML上蒸镀电子传输层ETL和金属阳极Al。本发明的方法可以在非真空条件下，将有机发光功能层薄膜材料以高分辨率和特定形状精准转移到相应基板上，不仅实现了转移区域的精确控制，且对加工环境要求低，降低成本的同时提高了生产效率。
The invention discloses a method for preparing an OLED light-emitting device by femtosecond laser pre-transfer technology. The donor ITO glass substrate to which the light-emitting layer EML is to be transferred; then use femtosecond laser pulses to transfer the light-emitting layer EML on the donor ITO glass substrate to the hole transport layer HTL in step S1; finally, evaporate on the transferred light-emitting layer EML Electron transport layer ETL and metal anode Al are plated. The method of the invention can accurately transfer the organic light-emitting functional layer thin film material to the corresponding substrate with high resolution and specific shape under non-vacuum conditions, which not only realizes the precise control of the transfer area, but also has low requirements on the processing environment and reduces the cost. while improving production efficiency.
Description
技术领域technical field
本发明涉及激光加工领域，尤其涉及一种飞秒激光前转移技术制备OLED发光器件的方法。The invention relates to the field of laser processing, in particular to a method for preparing an OLED light-emitting device by femtosecond laser pre-transfer technology.
背景技术Background technique
OLED的全名为Organic Light-Emitting Diode，中文名为有机发光二极管。与目前被广泛使用的平板显示器LCD相比，OLED具有主动发光、高对比度、超轻薄、耐低温、响应速度快、功耗低、视角广、抗震能力强等特点，而且更适合柔性显示和3D显示。The full name of OLED is Organic Light-Emitting Diode, and the Chinese name is Organic Light Emitting Diode. Compared with the currently widely used flat panel display LCD, OLED has the characteristics of active light emission, high contrast ratio, ultra-thin, low temperature resistance, fast response speed, low power consumption, wide viewing angle and strong shock resistance, and is more suitable for flexible display and 3D display. show.
目前主流的OLED制备工艺中实现OLED屏幕全彩颜色的方案主要是“蒸镀”。这类蒸镀所用的技术叫FMM(精细金属掩模板)，就是蒸镀的时候为了区分像素，盖个掩膜，而掩膜的对齐及掩膜材料本身都会成为技术难点。采用FMM方法蒸镀出来的OLED，效果很不错，三原色都非常纯粹，但成本非常高昂。为解决这一关键问题，需要从改进真空蒸镀技术和开发新的薄膜材料(对于OLED就是有机发光功能层)制备技术等方面着手。In the current mainstream OLED preparation process, the solution to realize full-color color of OLED screen is mainly "evaporation". The technology used in this type of evaporation is called FMM (Fine Metal Mask), which is to cover a mask in order to distinguish pixels during evaporation, and the alignment of the mask and the mask material itself will become technical difficulties. The OLED evaporated by the FMM method has a very good effect, and the three primary colors are very pure, but the cost is very high. In order to solve this key problem, it is necessary to improve the vacuum evaporation technology and develop new thin-film materials (organic light-emitting functional layer for OLED) preparation technology.
发明内容SUMMARY OF THE INVENTION
本发明要解决的技术问题在于针对现有技术的缺陷，提供一种飞秒激光前转移技术制备OLED发光器件的方法，可以在非真空条件下，将有机发光功能层薄膜材料以高分辨率和特定形状转移到相应基板上。The technical problem to be solved by the present invention is to provide a method for preparing an OLED light-emitting device by femtosecond laser pre-transfer technology, which can make the organic light-emitting functional layer thin film material with high resolution and high resolution under non-vacuum conditions. The specific shape is transferred to the corresponding substrate.
本发明解决其技术问题所采用的技术方案是：The technical scheme adopted by the present invention to solve its technical problems is:
提供一种飞秒激光前转移技术制备OLED发光器件的方法，制备的OLED发光器件包括从下至上依次叠层设置的ITO玻璃基板、空穴传输层HTL、发光层EML、电子传输层ETL和金属阳极Al，包括以下步骤：Provided is a method for preparing an OLED light-emitting device by femtosecond laser pre-transfer technology. The prepared OLED light-emitting device includes an ITO glass substrate, a hole transport layer HTL, a light-emitting layer EML, an electron transport layer ETL and a metal layered sequentially from bottom to top. Anode Al, including the following steps:
S1、在ITO玻璃基板上蒸镀空穴传输层HTL，形成受主ITO玻璃基板，所述空穴传输层HTL厚度为50～80nm；S1. Evaporating a hole transport layer HTL on an ITO glass substrate to form an acceptor ITO glass substrate, and the thickness of the hole transport layer HTL is 50-80 nm;
S2、制备带有特定图案的待转移发光层EML的施主ITO玻璃基板；S2, preparing a donor ITO glass substrate with a specific pattern of the light-emitting layer EML to be transferred;
S3、利用飞秒激光脉冲将施主ITO玻璃基板上的发光层EML转移到步骤S1中的空穴传输层HTL上，形成的发光层EML厚度为40～60nm；S3, using femtosecond laser pulses to transfer the light-emitting layer EML on the donor ITO glass substrate to the hole transport layer HTL in step S1, and the formed light-emitting layer EML has a thickness of 40-60 nm;
S4、在转移的发光层EML上蒸镀电子传输层ETL和金属阳极Al，所述电子传输层ETL厚度为10～20nm，所述金属阳极Al厚度为50～70nm。S4. Evaporating an electron transport layer ETL and a metal anode Al on the transferred light-emitting layer EML, the electron transport layer ETL having a thickness of 10-20 nm, and the metal anode Al having a thickness of 50-70 nm.
接上述技术方案，步骤S2中制备带有特定图案的待转移发光层EML的施主ITO玻璃基板是指：在施主ITO玻璃基板上先蒸镀Al膜，所述Al膜厚度为50～70nm，接着在Al膜上再蒸镀发光层EML薄膜，所述发光层EML薄膜厚度为40～60nm。Following the above technical solution, the preparation of the donor ITO glass substrate with a specific pattern of the light-emitting layer EML to be transferred in step S2 refers to: firstly evaporating an Al film on the donor ITO glass substrate, the thickness of the Al film is 50-70 nm, and then A light-emitting layer EML film is evaporated on the Al film, and the thickness of the light-emitting layer EML film is 40-60 nm.
接上述技术方案，步骤S3中利用飞秒激光脉冲将施主ITO玻璃基板上的发光层EML转移到步骤S1中的空穴传输层HTL上，包括以下步骤：Following the above technical solution, in step S3, femtosecond laser pulses are used to transfer the light-emitting layer EML on the donor ITO glass substrate to the hole transport layer HTL in step S1, including the following steps:
S31、将施主ITO玻璃基板的发光层EML薄膜与受主ITO玻璃基板的空穴传输层HTL正对，并调节二者距离为0～100um；S31, align the light-emitting layer EML film of the donor ITO glass substrate with the hole transport layer HTL of the acceptor ITO glass substrate, and adjust the distance between the two to be 0-100um;
S32、调节飞秒激光器，使激光光斑聚焦于施主ITO玻璃基板的发光层EML薄膜界面上；S32, adjusting the femtosecond laser so that the laser spot is focused on the interface of the EML film of the light-emitting layer of the donor ITO glass substrate;
S33、调节飞秒激光器的工艺参数，使激光光斑在施主ITO玻璃基板的发光层EML薄膜界面上连续扫描，完成施主ITO玻璃基板的发光层EML的转移。S33 , adjusting the process parameters of the femtosecond laser so that the laser spot scans continuously on the interface of the EML thin film of the light-emitting layer of the donor ITO glass substrate to complete the transfer of the EML of the light-emitting layer of the donor ITO glass substrate.
接上述技术方案，所述施主ITO玻璃基板上的发光层EML薄膜材料为红光材料、蓝光材料或者绿光材料。Following the above technical solution, the material of the EML thin film of the light emitting layer on the donor ITO glass substrate is a red light material, a blue light material or a green light material.
接上述技术方案，制备的OLED发光器件的空穴传输层HTL及电子传输层ETL的材料和二者之间发光层EML薄膜材料相配合。According to the above technical solution, the materials of the hole transport layer HTL and the electron transport layer ETL of the prepared OLED light-emitting device are matched with the material of the light-emitting layer EML thin film between them.
接上述技术方案，步骤S33中飞秒激光器的工艺参数包括激光脉冲宽度、激光功率、重复频率、光斑形状、平台扫描速度和填充间距，所述激光脉冲宽度为200fs～5ps，所述激光功率为5～20W，所述重复频率为0.2～5MHz，所述光斑形状为正方形、长方形或者五角形，所述平台扫描速度为100～10000mm/s，所述填充间距为2-100μm。In connection with the above technical solution, the process parameters of the femtosecond laser in step S33 include laser pulse width, laser power, repetition frequency, spot shape, platform scanning speed and filling spacing, the laser pulse width is 200fs～5ps, and the laser power is 5-20W, the repetition frequency is 0.2-5MHz, the light spot shape is square, rectangle or pentagon, the platform scanning speed is 100-10000mm/s, and the filling spacing is 2-100μm.
本发明产生的有益效果是：本发明提供的一种飞秒激光前转移技术制备OLED发光器件的方法，利用飞秒激光脉冲将施主ITO玻璃基板上的发光层EML转移到受主ITO玻璃基板的空穴传输层HTL上，可以在非真空条件下，将有机发光功能层薄膜材料以高分辨率和特定形状精准转移到相应基板上。本发明的方法不仅实现了转移区域的精确控制，且对加工环境要求低，降低成本的同时提高了生产效率。The beneficial effects of the present invention are as follows: the present invention provides a method for preparing an OLED light-emitting device with a femtosecond laser pre-transfer technology, using femtosecond laser pulses to transfer the light-emitting layer EML on the donor ITO glass substrate to the receiver ITO glass substrate. On the hole transport layer HTL, the organic light-emitting functional layer thin film material can be precisely transferred to the corresponding substrate with high resolution and specific shape under non-vacuum conditions. The method of the invention not only realizes the precise control of the transfer area, but also has low requirements on the processing environment, reduces the cost and improves the production efficiency.
附图说明Description of drawings
下面将结合附图及实施例对本发明作进一步说明，附图中：The present invention will be further described below in conjunction with the accompanying drawings and embodiments, in which:
图1是本发明方法的总体实施流程图；Fig. 1 is the overall implementation flow chart of the method of the present invention;
图2是本发明方法制备的OLED发光器件各层材料分布图；Fig. 2 is the material distribution diagram of each layer of the OLED light-emitting device prepared by the method of the present invention;
图3是本发明方法的施主ITO玻璃基板各层材料分布图；Fig. 3 is the material distribution diagram of each layer of the donor ITO glass substrate of the method of the present invention;
图4是本发明方法的飞秒激光加工扫描示意图；Fig. 4 is the femtosecond laser processing scanning schematic diagram of the method of the present invention;
图5是本发明具体实施例绿光OLED层激光转移后器件俯视图。FIG. 5 is a top view of the device after laser transfer of the green light OLED layer according to the specific embodiment of the present invention.
具体实施方式Detailed ways
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.
如图1所示，本发明提供一种飞秒激光前转移技术制备OLED发光器件的方法，制备的OLED发光器件包括从下至上依次叠层设置的ITO(铟锡氧化物半导体)玻璃基板、空穴传输层HTL、发光层EML、电子传输层ETL和金属阳极Al，包括以下步骤：As shown in FIG. 1 , the present invention provides a method for preparing an OLED light-emitting device by femtosecond laser pre-transfer technology. The prepared OLED light-emitting device comprises an ITO (indium tin oxide semiconductor) glass substrate, an air The hole transport layer HTL, the light emitting layer EML, the electron transport layer ETL and the metal anode Al include the following steps:
S1、在ITO玻璃基板上蒸镀空穴传输层HTL，形成受主ITO玻璃基板，所述空穴传输层HTL厚度为50～80nm；S1. Evaporating a hole transport layer HTL on an ITO glass substrate to form an acceptor ITO glass substrate, and the thickness of the hole transport layer HTL is 50-80 nm;
S2、制备带有特定图案的待转移发光层EML的施主ITO玻璃基板；S2, preparing a donor ITO glass substrate with a specific pattern of the light-emitting layer EML to be transferred;
S3、利用飞秒激光脉冲将施主ITO玻璃基板上的发光层EML转移到步骤S1中的空穴传输层HTL上，形成的发光层EML厚度为40～60nm；S3, using femtosecond laser pulses to transfer the light-emitting layer EML on the donor ITO glass substrate to the hole transport layer HTL in step S1, and the formed light-emitting layer EML has a thickness of 40-60 nm;
S4、在转移的发光层EML上蒸镀电子传输层ETL和金属阳极Al，所述电子传输层ETL厚度为10～20nm，所述金属阳极Al厚度为50～70nm。S4. Evaporating an electron transport layer ETL and a metal anode Al on the transferred light-emitting layer EML, the electron transport layer ETL having a thickness of 10-20 nm, and the metal anode Al having a thickness of 50-70 nm.
作为最佳实施例，制备的OLED发光器件各层材料分布如图2所示，各层厚度分别为，空穴传输层HTL厚度为60nm，发光层EML厚度50nm，电子传输层ETL厚度为20nm，金属阳极Al厚度为60nm。As a best embodiment, the material distribution of each layer of the prepared OLED light-emitting device is shown in Figure 2, and the thickness of each layer is 60nm for the hole transport layer HTL, 50nm for the light-emitting layer EML, and 20nm for the electron transport layer ETL. The thickness of the metal anode Al is 60 nm.
本发明利用飞秒激光极高的峰值功率，在极短的时间内将金属牺牲层加热到极高的温度，并在局域范围内产生极大的压强并使金属牺牲层向外膨胀，由于作用时间很短，此时发光层EML依旧保持冷的温度并被往外极速膨胀的金属牺牲层往前极速推出去，从而实现发光层材料的转移，同时，控制金属牺牲层厚度小于激光的光学穿透深度使金属薄膜纵向均匀加热，保障加工区域边缘的光滑。The invention uses the extremely high peak power of the femtosecond laser to heat the metal sacrificial layer to a very high temperature in a very short time, and generates a great pressure in a local range to make the metal sacrificial layer expand outward. The action time is very short. At this time, the EML of the light-emitting layer still maintains a cold temperature and is rapidly pushed forward by the metal sacrificial layer that expands rapidly outward, thereby realizing the transfer of the material of the light-emitting layer. At the same time, the thickness of the metal sacrificial layer is controlled to be smaller than the optical penetration of the laser The penetration depth makes the metal film uniformly heated in the longitudinal direction and ensures the smooth edge of the processing area.
进一步地，如图3所示，步骤S2中制备带有特定图案的待转移发光层EML的施主ITO玻璃基板是指：在施主ITO玻璃基板上先蒸镀Al膜，所述Al膜厚度为50～70nm，接着在Al膜上再蒸镀发光层EML薄膜，所述发光层EML薄膜厚度为40～60nm。作为最佳实施例，施主ITO玻璃基板上的发光层EML薄膜厚度为60nm，Al膜厚度为60nm。Al膜层作为激光加工牺牲层，吸收激光能量将发光层EML推出去。Further, as shown in FIG. 3 , the preparation of the donor ITO glass substrate with a specific pattern of the light-emitting layer EML to be transferred in step S2 refers to: firstly evaporating an Al film on the donor ITO glass substrate, and the thickness of the Al film is 50 μm. ~70nm, and then vapor-deposited a light-emitting layer EML thin film on the Al film, and the thickness of the light-emitting layer EML thin film is 40-60nm. As a preferred embodiment, the thickness of the EML film of the light-emitting layer on the donor ITO glass substrate is 60 nm, and the thickness of the Al film is 60 nm. The Al film layer is used as a sacrificial layer for laser processing, which absorbs laser energy and pushes out the light-emitting layer EML.
进一步地，步骤S3中利用飞秒激光脉冲将施主ITO玻璃基板上的发光层EML转移到步骤S1中的空穴传输层HTL上，包括以下步骤：Further, in step S3, the femtosecond laser pulse is used to transfer the light-emitting layer EML on the donor ITO glass substrate to the hole transport layer HTL in step S1, including the following steps:
S31、将施主ITO玻璃基板的发光层EML薄膜与受主ITO玻璃基板的空穴传输层HTL正对，并调节二者距离为施主ITO玻璃基板的发光层EML薄膜与受主ITO玻璃基板的空穴传输层HTL薄膜接触；S31. Align the light-emitting layer EML film of the donor ITO glass substrate with the hole transport layer HTL of the acceptor ITO glass substrate, and adjust the distance between the two to be the empty space between the light-emitting layer EML film of the donor ITO glass substrate and the acceptor ITO glass substrate hole transport layer HTL film contact;
S32、调节飞秒激光器，使激光光斑聚焦于施主ITO玻璃基板的发光层EML薄膜界面上；S32, adjusting the femtosecond laser so that the laser spot is focused on the interface of the EML film of the light-emitting layer of the donor ITO glass substrate;
S33、调节飞秒激光器的工艺参数，使激光光斑在施主ITO玻璃基板的发光层EML薄膜界面上连续扫描，完成施主ITO玻璃基板的发光层EML的转移。S33 , adjusting the process parameters of the femtosecond laser so that the laser spot scans continuously on the interface of the EML thin film of the light-emitting layer of the donor ITO glass substrate to complete the transfer of the EML of the light-emitting layer of the donor ITO glass substrate.
图4所示为本发明实施例的飞秒激光加工扫描示意图，通过光学衍射元件或其他相位或光场调制元器件改变激光光斑的形状，可以设计特定的图案以较高的分辨率将OLED中的有机发光功能材料转移到其他结构层上，且转移区域的大小可以精细到微米尺寸，这为实现OLED器件结构中的RGB彩色排列打下了基础。FIG. 4 is a schematic diagram of femtosecond laser processing scanning according to an embodiment of the present invention. By changing the shape of the laser spot by optical diffraction elements or other phase or light field modulation components, a specific pattern can be designed to convert the OLED into the OLED with high resolution. The organic light-emitting functional materials are transferred to other structural layers, and the size of the transferred area can be as fine as micron size, which lays the foundation for realizing the RGB color arrangement in the OLED device structure.
进一步地，施主ITO玻璃基板上的发光层EML薄膜材料为红光材料、蓝光材料或者绿光材料。在OLED屏幕中发光材料的印刷转移中，可以避免三基色发光材料的更换过程，有效地减少发光材料在印刷过程中的浪费，实现对不同色发光材料在相应微小区域的精准转移过程。Further, the material of the EML thin film of the light emitting layer on the donor ITO glass substrate is a red light material, a blue light material or a green light material. In the printing transfer of luminescent materials in OLED screens, the replacement process of three primary color luminescent materials can be avoided, the waste of luminescent materials in the printing process can be effectively reduced, and the precise transfer process of different color luminescent materials in corresponding tiny areas can be realized.
进一步地，制备的OLED发光器件的空穴传输层HTL及电子传输层ETL的材料和二者之间发光层EML薄膜材料相配合。Further, the materials of the hole transport layer HTL and the electron transport layer ETL of the prepared OLED light-emitting device are matched with the material of the light-emitting layer EML thin film between them.
进一步地，步骤S33中飞秒激光器的工艺参数包括激光脉冲宽度、激光功率、重复频率、光斑形状、平台扫描速度和填充间距，作为最佳实施例，激光脉冲宽度为飞秒模式，激光功率为7.5-8.5W，重复频率为200kHz，平台扫描速度为1000-4000mm/s，所述填充间距为12-16μm。图5为以绿光材料作为发光层EML，图案为矩形制备的绿光OLED激光转移后器件俯视图。Further, the process parameters of the femtosecond laser in step S33 include laser pulse width, laser power, repetition frequency, spot shape, platform scanning speed and filling spacing, as the best embodiment, the laser pulse width is a femtosecond mode, and the laser power is 7.5-8.5W, the repetition frequency is 200kHz, the platform scanning speed is 1000-4000mm/s, and the filling spacing is 12-16μm. FIG. 5 is a top view of a green OLED device after laser transfer, prepared with a green light material as the light-emitting layer EML, and the pattern is a rectangle.
本发明利用飞秒激光脉冲将施主ITO玻璃基板上的发光层EML转移到步骤S1中的空穴传输层HTL上，可以在非真空条件下，将有机发光功能层薄膜材料以高分辨率和特定形状精准转移到相应基板上。本发明的方法不仅实现了转移区域的精确控制，且对加工环境要求低，降低成本的同时提高了生产效率。The present invention utilizes femtosecond laser pulses to transfer the light-emitting layer EML on the donor ITO glass substrate to the hole transport layer HTL in step S1, and can transfer the organic light-emitting functional layer thin film material with high resolution and specificity under non-vacuum conditions. The shape is precisely transferred to the corresponding substrate. The method of the invention not only realizes the precise control of the transfer area, but also has low requirements on the processing environment, reduces the cost and improves the production efficiency.
应当理解的是，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，而所有这些改进和变换都应属于本发明所附权利要求的保护范围。It should be understood that, for those skilled in the art, improvements or changes can be made according to the above description, and all these improvements and changes should fall within the protection scope of the appended claims of the present invention.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010278215.5A CN111384313A (en) | 2020-04-10 | 2020-04-10 | Method for preparing OLED (organic light emitting diode) light emitting device by femtosecond pre-laser transfer technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010278215.5A CN111384313A (en) | 2020-04-10 | 2020-04-10 | Method for preparing OLED (organic light emitting diode) light emitting device by femtosecond pre-laser transfer technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111384313A true CN111384313A (en) | 2020-07-07 |
Family
ID=71218877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010278215.5A Pending CN111384313A (en) | 2020-04-10 | 2020-04-10 | Method for preparing OLED (organic light emitting diode) light emitting device by femtosecond pre-laser transfer technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111384313A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116288156A (en) * | 2023-02-16 | 2023-06-23 | 吉林大学 | A laser control method for the phase transition process of organic light-emitting molecular thin films |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009059A (en) * | 2013-02-27 | 2014-08-27 | 三星显示有限公司 | Organic light emitting diode display and manufacturing method thereof, and donor substrate |
| US20140353621A1 (en) * | 2013-05-29 | 2014-12-04 | Samsung Display Co., Ltd. | Method of manufacturing organic light-emitting display apparatus and organic light-emitting display apparatus manufactured by using the method |
| CN108110034A (en) * | 2017-12-14 | 2018-06-01 | 安徽熙泰智能科技有限公司 | Color OLED micro-display device based on laser thermal transfer and preparation method thereof |
| CN109860391A (en) * | 2018-12-29 | 2019-06-07 | 武汉理工大学 | A kind of processing method using ultrafast laser to transfer thin film material |
-
2020
- 2020-04-10 CN CN202010278215.5A patent/CN111384313A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009059A (en) * | 2013-02-27 | 2014-08-27 | 三星显示有限公司 | Organic light emitting diode display and manufacturing method thereof, and donor substrate |
| US20140353621A1 (en) * | 2013-05-29 | 2014-12-04 | Samsung Display Co., Ltd. | Method of manufacturing organic light-emitting display apparatus and organic light-emitting display apparatus manufactured by using the method |
| CN108110034A (en) * | 2017-12-14 | 2018-06-01 | 安徽熙泰智能科技有限公司 | Color OLED micro-display device based on laser thermal transfer and preparation method thereof |
| CN109860391A (en) * | 2018-12-29 | 2019-06-07 | 武汉理工大学 | A kind of processing method using ultrafast laser to transfer thin film material |
Non-Patent Citations (2)
| Title |
|---|
| JAMES SHAW STEWART ET AL.: "Red-green-blue polymer liglaser-induced forward transferht-emitting diode pixels printed by optimized", 《APPLIED PHYSICS LETTERS》 * |
| ROMAIN FARDEL ET AL.: "Laser-Induced Forward Transfer of Organic LED Building Blocks Studied by Time-Resolved Shadowgraphy", 《J. PHYS. CHEM. C》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116288156A (en) * | 2023-02-16 | 2023-06-23 | 吉林大学 | A laser control method for the phase transition process of organic light-emitting molecular thin films |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104269494B (en) | Organic electroluminescent device, its manufacturing method, and display device | |
| US9324962B2 (en) | Organic luminescence display and method of manufacturing the same | |
| KR20210006912A (en) | Method of providing auxiliary electrode and apparatus comprising auxiliary electrode | |
| TWI570907B (en) | Organic light emitting display device, organic light emitting display panel and method of manufacturing the same | |
| WO2016165233A1 (en) | Organic light emitting diode display panel and manufacturing method therefor, and display device | |
| JP2007280963A (en) | Full-color organic electroluminescence display device | |
| WO2019196587A1 (en) | Organic electroluminescent display panel, manufacturing method thereof, and display device | |
| CN101783395A (en) | Organic electroluminescence component and manufacturing method thereof | |
| CN101221977A (en) | organic light emitting display | |
| CN100388422C (en) | Donor substrate and method for manufacturing organic light emitting display | |
| CN103094308B (en) | Organic electroluminescent display device | |
| CN105489611A (en) | Printed type light emitting display and manufacturing method therefor | |
| US8409788B2 (en) | Laser induced thermal imaging method, method of patterning organic layer using the same and method of fabricating organic light emitting diode display device using the same | |
| CN108281574B (en) | Organic light-emitting display panel and preparation method thereof | |
| CN111384313A (en) | Method for preparing OLED (organic light emitting diode) light emitting device by femtosecond pre-laser transfer technology | |
| US20140353615A1 (en) | Organic light emitting display device and method for manufacturing the same | |
| WO2021036205A1 (en) | Display panel and manufacturing method therefor | |
| JP2005158750A (en) | Donor substrate for full-color organic electroluminescence device, method for producing donor substrate, and full-color organic electroluminescence device using this donor substrate | |
| JP2006114506A (en) | Laser thermal transfer apparatus, organic electroluminescence device manufacturing method, and organic electroluminescence device | |
| KR20140117998A (en) | Organic light emitting pattern forming method and apparatus for organic light emitting display device using sublimation type thermal transfer process | |
| KR101797959B1 (en) | Forming method for organic patterns and manufacturing method for organic light emitting display | |
| JP2006202510A (en) | Manufacturing method of organic EL device | |
| WO2024055768A1 (en) | Display panel, display panel manufacturing method, and display device | |
| WO2021103103A1 (en) | Display panel and preparation method therefor, and display apparatus | |
| WO2021042577A1 (en) | Display panel and preparation method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200707 |
|
| RJ01 | Rejection of invention patent application after publication |