CN111384188A - Thin film solar cell and preparation method thereof - Google Patents

Thin film solar cell and preparation method thereof Download PDF

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Publication number
CN111384188A
CN111384188A CN201811613419.9A CN201811613419A CN111384188A CN 111384188 A CN111384188 A CN 111384188A CN 201811613419 A CN201811613419 A CN 201811613419A CN 111384188 A CN111384188 A CN 111384188A
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layer
solar cell
film solar
transparent conductive
carbon
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赵树利
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Shanghai zuqiang Energy Co.,Ltd.
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Beijing Apollo Ding Rong Solar Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A thin film solar cell and a method for manufacturing the same, the thin film solar cell includes: a substrate; a back electrode layer disposed on the substrate; a light absorbing layer disposed on the back electrode layer; buffer layer: disposed on the light absorbing layer; the window layer is arranged on the buffer layer; the window layer comprises a high-resistance layer and a transparent conducting layer, and the transparent conducting layer comprises a transparent conducting oxide layer and a nano carbon material layer. Introducing carbon nanotubes to replace the original metal gate; the preparation process is simple, the nano carbon material layer and the transparent conductive oxide layer are used as the transparent conductive layer together, and the transmission capability of current is enhanced, so that the thickness of the transparent conductive layer is reduced, the width of the copper indium gallium selenide sub-cell is increased, the light absorption efficiency is enhanced, and the photoelectric conversion efficiency of the thin-film solar cell is finally improved.

Description

Thin film solar cell and preparation method thereof
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a thin film solar cell and a preparation method thereof.
Background
In order to improve the conversion efficiency of the CIGS solar cell, a metal grid is introduced into the CIGS solar cell. Because the metal has more excellent conductivity, the thickness of the aluminum zinc oxide layer can be properly reduced and the light transmittance can be enhanced while the metal grid is introduced. In addition, due to the introduction of the metal grid, the width of the sub-battery can be increased, the dead zone area caused by scribing is reduced, and the effective conversion efficiency of the copper indium gallium selenide battery is improved. However, the metal is opaque, so that the effective area of the copper indium gallium selenide battery can be reduced to a certain extent by introducing the metal grid, and although the effective area of the battery can be increased from another angle by increasing the width of the sub-battery, the improvement effect of the conversion efficiency of the metal grid is really weakened.
Disclosure of Invention
The invention aims to provide a thin-film solar cell which can reduce the thickness of the solar cell and has high power generation efficiency.
In order to solve the above problems, the present invention provides a thin film solar cell, including:
a substrate;
a back electrode layer disposed on the substrate;
a light absorbing layer disposed on the back electrode layer;
buffer layer: disposed on the light absorbing layer;
the window layer is arranged on the buffer layer;
the window layer comprises a high-resistance layer and a transparent conducting layer, and the transparent conducting layer comprises a transparent conducting oxide layer and a nano carbon material layer.
Further, the thickness of the nano carbon material layer is 5-30 nm.
Further, the nano carbon material layer includes: carbon nano tubes or composite materials consisting of the carbon nano tubes and the metal nano wires, and carbon nano wires and composite materials consisting of the carbon nano wires and the metal nano wires.
Furthermore, the transparent conductive oxide layer further comprises one of an aluminum zinc oxide layer, an indium tin oxide layer and a boron-doped zinc oxide layer, and the thickness of the transparent conductive oxide layer is 100-400 nm.
Further, the carbon nanotubes or the composite material form a network structure.
Further, the nano carbon material layer is laminated on the surface of the transparent conductive oxide layer far away from the substrate.
Further, when the nano carbon material layer is a carbon nano tube, the carbon nano tube is coated in the transparent conductive oxide layer.
Further, the light absorption layer is made of one of copper indium gallium selenide, copper indium selenide and gallium arsenide, and the thickness of the light absorption layer is 1-3 microns;
the buffer layer is made of one of cadmium sulfide CdS, zinc sulfide ZnS, a zinc sulfur oxide Zn (S, O) and a zinc magnesium oxide ZnMgO, and the thickness of the buffer layer is 300-500 nm;
the high-resistance layer is made of intrinsic zinc oxide and has the thickness of 20-50 nm;
the back electrode layer is a molybdenum back electrode.
The invention also provides a preparation method of the thin film solar cell,
sequentially forming a back electrode layer, a light absorption layer, a buffer layer, a high-resistance layer and a window layer on a substrate;
the window layer comprises a high-resistance layer and a transparent conductive layer, and the high-resistance layer is positioned between the buffer layer and the transparent conductive layer;
the transparent conducting layer comprises a transparent conducting oxide layer and a nano carbon material layer, wherein the nano carbon material layer comprises carbon nano tubes or a composite material consisting of the carbon nano tubes and metal nano wires.
And further, spraying or spin-coating the nano carbon material layer to the surface of the transparent conductive oxide layer to synthesize the transparent conductive layer.
Compared with the single transparent conductive oxide in the prior art, the transparent conductive oxide layer and the nano carbon material layer are used as the transparent conductive layer together, so that the current transmission capability can be enhanced, the thickness of the transparent conductive layer is reduced, the width of the thin-film solar cell is increased, the light absorption efficiency is enhanced, the photoelectric conversion efficiency of the thin-film solar cell is finally improved, and meanwhile, the preparation process is simple.
Drawings
FIG. 1 is a schematic view of a thin film solar cell according to the present invention;
fig. 2 is a flowchart of a method of manufacturing a solar cell according to the present invention.
Reference numerals:
1. a substrate, 2, a back electrode, 3, a light absorption layer, 4, a buffer layer, 5 and a window layer;
51. a high resistance layer 52, a transparent conductive layer;
521. a transparent conductive oxide layer, 522, a layer of nanocarbon material.
In a specific embodiment
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings, in which embodiments are described in one embodiment. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
First embodiment
Fig. 1 is a schematic structural view of a thin film solar cell of the present invention.
A thin film solar cell comprising:
a substrate;
a back electrode layer disposed on the substrate;
a light absorbing layer disposed on the back electrode;
buffer layer: disposed on the light absorbing layer;
the window layer is arranged on the buffer layer;
the window layer comprises a high-resistance layer and a transparent conducting layer, and the transparent conducting layer comprises a transparent conducting oxide layer and a nano carbon material layer.
A p-n junction is formed through the light absorption layer and the buffer layer, a new hole-electron pair is formed by the p-n junction under the excitation action of solar energy, a built-in electric field is formed, and current is formed after a circuit is switched on.
In a specific embodiment, the substrate, the back electrode layer, the light absorbing layer, the buffer layer, the high resistance layer, the transparent conductive oxide layer, and the nanocarbon material layer are sequentially stacked.
The substrate can be a float glass substrate, such as a stainless steel film, a polyimide film, etc.
In a preferred embodiment, the layer of nanocarbon material comprises: the composite material comprises carbon nano tubes, a composite material consisting of the carbon nano tubes and metal nano wires, and a composite material consisting of the carbon nano wires and the metal nano wires;
in a specific embodiment, the nanocarbon material layer may be a composite material of carbon nanotubes and aluminum (Al) or silver (Ag);
in a specific embodiment, the nanocarbon material layer may be a composite material of carbon nanowires and aluminum (Al) or silver (Ag);
in a specific embodiment, the nanocarbon material layer can be formed by carbon nanotubes and copper, and the nanocarbon material layer is a semiconductor material layer, so that the nanocarbon material layer has good light transmittance and conductivity, and the thickness of the thin-film solar cell can be reduced on the premise of ensuring the photoelectric conversion rate. The original metal grid electrode is 800-1000 nm in thickness, and when a nano carbon material layer is adopted, only 200-500 nm is needed; the cost is reduced, the stress of the thin film solar cell can be reduced, and the flexibility of the thin film solar cell is improved.
The composite carbon nano material is formed by the carbon nano tube and the metal nano wire, so that the metal nano wire is added, the conductivity is further improved, and the photoelectric conversion rate can be improved.
In a preferred embodiment, the nanocarbon material layer may be a carbon nanowire or a composite of a carbon nanowire and a metal nanowire.
In a preferred embodiment, the layer of nanocarbon material is a network structure.
In a specific embodiment, the carbon nanotubes or the composite material form a network structure.
The thickness of the nano carbon material layer is 5-30 nm, and can be 5nm, 10nm, 15nm, 20nm or 30 nm.
When the nano carbon material layer is a carbon nano tube, the carbon nano tube is coated in the transparent conductive oxide layer.
In a specific embodiment, the back electrode layer is a molybdenum back electrode made of molybdenum, and the back electrode layer is prepared on the substrate by using a vacuum magnetron sputtering method; in the preparation process, the vacuum sputtering pressure is kept at 0.1-1.0 Pa; the thickness of the back electrode layer is 300-500 nm, which can be 300nm, 350nm, 400nm, 450nm, or 500 nm.
The back electrode layer is too thick, the cost is high, and the stress deformation of the film layer is increased; the back electrode layer is too thin and has poor conductivity; the back electrode layer has the thickness range, so that the cost and the stress of the thin film solar cell can be controlled, and the conductivity of the back electrode layer is ensured.
In a specific embodiment, the material of the light absorption layer is one of Copper Indium Gallium Selenide (CIGS), Copper Indium Selenide (CIS) and gallium arsenide (GaAs), and a copper indium gallium selenide thin film is prepared on one side of the back electrode layer, which is far away from the substrate, by using a co-evaporation method; the light absorption layer has a thickness of 1 to 3.0 μm, and may be 1 μm, 1.5 μm, 2 μm, 2.4 μm, 2.8 μm, or 3.0 μm.
In one embodiment, the light absorbing layer may be formed by sputtering and then selenizing.
In a specific embodiment, the buffer layer is made of one of cadmium sulfide (CdS), zinc sulfide (ZnS), zinc sulfur oxide Zn (S, O) and zinc magnesium oxide (ZnMgO), and a cadmium sulfide thin film is deposited on one side of the light absorption layer away from the back electrode layer by a chemical bath deposition method (CBD); the thickness of the buffer layer is 300-500 nm, and can be 300nm, 250nm, 400nm, 450nm or 500 nm.
Cadmium sulfide (CdS), zinc sulfide (ZnS), zinc sulfur oxide compounds Zn (S, O), and zinc magnesium oxide (ZnMgO) can all be used as materials of the buffer layer. Cadmium sulfide (CdS) is commonly used in the prior art, but the cadmium pollution problem is caused; the sulfur-oxygen-zinc compound Zn (S, O) or zinc-magnesium oxide (ZnMgO) can avoid the cadmium pollution problem and is beneficial to the industrialized popularization of the copper indium gallium selenide.
In a specific embodiment, the material of the high resistance layer is intrinsic zinc oxide, and a layer of intrinsic zinc oxide (i-ZnO) film is deposited on one surface of the buffer layer away from the light absorption layer by using a vacuum magnetron sputtering method; the high resistance layer has a thickness of 20-50 nm, which may be 20nm, 25nm, 30nm, 40nm, 45nm, or 50nm
In a specific embodiment, the transparent conductive oxide layer further includes an aluminum zinc oxide layer (AZO) and an indium tin oxide layer (ITO), and the thickness of the transparent conductive oxide layer is 100 to 400nm, and may be 100nm, 150nm, 200nm, 300nm, or 400 nm.
Second embodiment
Fig. 2 is a flowchart of a method of manufacturing a solar cell according to the present invention.
A method for preparing a thin-film solar cell,
sequentially forming a back electrode layer, a light absorption layer, a buffer layer and a window layer on a substrate;
the window layer comprises a high-resistance layer and a transparent conductive layer, and the high-resistance layer is positioned between the buffer layer and the transparent conductive layer;
and preparing a transparent conducting layer on the surface of the transparent conducting layer far away from the back electrode layer, wherein the transparent conducting layer comprises a transparent conducting oxide layer and a nano carbon material layer, and the nano carbon material layer comprises carbon nano tubes or a composite material consisting of the carbon nano tubes and metal nano wires.
Preferably, the nano carbon material layer is sprayed or spin-coated on the surface of the transparent conductive oxide layer, and the window layer is synthesized.
It is to be understood that the above-described embodiments of the present invention in one particular embodiment are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.

Claims (10)

1. A thin film solar cell, comprising:
a substrate;
a back electrode layer disposed on the substrate;
a light absorbing layer disposed on the back electrode layer;
buffer layer: disposed on the light absorbing layer;
the window layer is arranged on the buffer layer;
the window layer comprises a high-resistance layer and a transparent conducting layer, and the transparent conducting layer comprises a transparent conducting oxide layer and a nano carbon material layer.
2. The thin film solar cell according to claim 1, wherein the thickness of the nanocarbon material layer is 5 to 30 nm.
3. The thin film solar cell of claim 1, wherein the nanocarbon material layer comprises: carbon nano tubes or composite materials consisting of the carbon nano tubes and the metal nano wires, and carbon nano wires and composite materials consisting of the carbon nano wires and the metal nano wires.
4. The thin film solar cell of claim 1, wherein the transparent conductive oxide layer further comprises one of an aluminum zinc oxide layer, an indium tin oxide layer, and a boron-doped zinc oxide layer, and the transparent conductive oxide layer has a thickness of 100 to 400 nm.
5. The thin-film solar cell of claim 3, wherein the carbon nanotubes or the composite material form a network structure.
6. The thin-film solar cell according to claim 1, wherein the nanocarbon material layer is laminated on a surface of the transparent conductive oxide layer remote from the substrate.
7. The thin-film solar cell of claim 1, wherein when the nanocarbon material layer is a carbon nanotube, the carbon nanotube is coated in the transparent conductive oxide layer.
8. The thin-film solar cell according to claim 1, wherein the light absorption layer is made of one of copper indium gallium selenide, copper indium selenide and gallium arsenide, and the thickness of the light absorption layer is 1 to 3 μm;
the buffer layer is made of one of cadmium sulfide, zinc sulfur oxide and zinc magnesium oxide, and the thickness of the buffer layer is 300-500 nm;
the high-resistance layer is made of intrinsic zinc oxide and has the thickness of 20-50 nm;
the back electrode layer is a molybdenum back electrode.
9. A method for preparing a thin film solar cell is characterized in that,
sequentially forming a back electrode layer, a light absorption layer, a buffer layer and a window layer on a substrate;
the window layer comprises a high-resistance layer and a transparent conductive layer, and the high-resistance layer is positioned between the buffer layer and the transparent conductive layer;
the transparent conducting layer comprises a transparent conducting oxide layer and a nano carbon material layer, wherein the nano carbon material layer comprises carbon nano tubes or a composite material consisting of the carbon nano tubes and metal nano wires.
10. A method of manufacturing a thin film solar cell as claimed in claim 9,
and spraying or spin-coating the nano carbon material layer to the surface of the transparent conductive oxide layer to synthesize the transparent conductive layer.
CN201811613419.9A 2018-12-27 2018-12-27 Thin film solar cell and preparation method thereof Pending CN111384188A (en)

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010062708A2 (en) * 2008-10-30 2010-06-03 Hak Fei Poon Hybrid transparent conductive electrodes
CN102087884A (en) * 2009-12-08 2011-06-08 中国科学院福建物质结构研究所 Flexible transparent conductive film based on organic polymers and silver nanowires and preparation method thereof
CN102823012A (en) * 2010-03-04 2012-12-12 格尔德殿工业公司 Electronic devices including transparent conductive coatings including carbon nanotubes and nanowire composites, and methods of making the same
US20130087363A1 (en) * 2011-10-11 2013-04-11 Korea Institute Of Science And Technology Metal nanowires with high linearity, method for producing the metal nanowires and transparent conductive film including the metal nanowires
CN103155174A (en) * 2010-08-07 2013-06-12 伊诺瓦动力有限公司 Device components with surface-embedded additives and related manufacturing methods
JP2014072041A (en) * 2012-09-28 2014-04-21 Jnc Corp Method for producing transparent conductive film, transparent conductive film and device element
CN105097980A (en) * 2014-05-14 2015-11-25 香港中文大学 Thin film solar cell and manufacturing method thereof
CN105914240A (en) * 2016-06-16 2016-08-31 中国华能集团公司 Solar cell using carbon nanotube transparent electrode
JP2016201214A (en) * 2015-04-08 2016-12-01 株式会社タッチパネル研究所 Transparent conductive electrode film and use thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010062708A2 (en) * 2008-10-30 2010-06-03 Hak Fei Poon Hybrid transparent conductive electrodes
CN102087884A (en) * 2009-12-08 2011-06-08 中国科学院福建物质结构研究所 Flexible transparent conductive film based on organic polymers and silver nanowires and preparation method thereof
CN102823012A (en) * 2010-03-04 2012-12-12 格尔德殿工业公司 Electronic devices including transparent conductive coatings including carbon nanotubes and nanowire composites, and methods of making the same
CN103155174A (en) * 2010-08-07 2013-06-12 伊诺瓦动力有限公司 Device components with surface-embedded additives and related manufacturing methods
US20130087363A1 (en) * 2011-10-11 2013-04-11 Korea Institute Of Science And Technology Metal nanowires with high linearity, method for producing the metal nanowires and transparent conductive film including the metal nanowires
JP2014072041A (en) * 2012-09-28 2014-04-21 Jnc Corp Method for producing transparent conductive film, transparent conductive film and device element
CN105097980A (en) * 2014-05-14 2015-11-25 香港中文大学 Thin film solar cell and manufacturing method thereof
JP2016201214A (en) * 2015-04-08 2016-12-01 株式会社タッチパネル研究所 Transparent conductive electrode film and use thereof
CN105914240A (en) * 2016-06-16 2016-08-31 中国华能集团公司 Solar cell using carbon nanotube transparent electrode

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