CN111383881A - Capacitive coupling plasma processor and temperature adjusting method thereof - Google Patents
Capacitive coupling plasma processor and temperature adjusting method thereof Download PDFInfo
- Publication number
- CN111383881A CN111383881A CN201811606367.2A CN201811606367A CN111383881A CN 111383881 A CN111383881 A CN 111383881A CN 201811606367 A CN201811606367 A CN 201811606367A CN 111383881 A CN111383881 A CN 111383881A
- Authority
- CN
- China
- Prior art keywords
- temperature
- upper electrode
- electrode assembly
- plasma processor
- capacitively coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
Abstract
A capacitance coupling plasma processor and its temperature adjusting method, at least one heater and at least one fan are set in the reaction cavity of the plasma processor, the conductive mounting plate of the upper electrode component has a cooling pipe, the cooling pipe is circulated with cooling liquid, when the temperature in the reaction cavity of the plasma processor is lower than the set temperature, the heater is powered on to heat the upper electrode component, when the temperature in the reaction cavity of the plasma processor is higher than the set temperature, the heater is cut off, the cooling liquid in the cooling pipe of the conductive mounting plate keeps the circulation state, when the plasma processor is in the processing state, the fan is started, when the plasma processor is in the standby state, the fan is closed. The invention uses the cooling pipeline and the fan in a matching way, does not need to enhance the cooling capacity of the cooling pipeline and increase the power of the heater, saves energy and ensures that the temperature of the reaction cavity is easier to control.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a capacitive coupling plasma processor and a temperature adjusting method thereof.
Background
As shown in fig. 1, a reaction chamber 1 of the capacitively coupled plasma processor is provided with an upper electrode 2 'and a lower electrode 3', the lower electrode is connected to a radio frequency source 6 ', the lower electrode 3' is provided with an electrostatic chuck 4 ', a substrate 5' to be processed is arranged on the electrostatic chuck 4 ', the upper electrode 3' is simultaneously used as a gas shower head, the gas shower head is connected to a gas supply device 7 ', and gas of the gas supply device 7' enters the reaction chamber 1 'through the gas shower head, is ionized to generate plasma, and processes the substrate 5'. A heater 8 ' and a cooler 9 ' are provided to balance the temperature of the upper electrode 2 ', and a cooling duct 10 ' is provided in the cooler 9 '. When the temperature is lower than the set temperature, the heater 8 ' is electrified to heat the upper electrode 2 ', the cooling liquid in the cooling pipeline 10 ' is kept normally open, and when the temperature is higher than the set temperature, the heater 8 ' is disconnected, and the heat of the upper electrode 2 ' is taken away by the cooling liquid. However, when the capacitively coupled plasma etching apparatus is changed from a standby state to a process state, the temperature of the upper electrode 2 'is instantaneously increased due to the influence of the plasma, and exceeds the process requirement or the temperature of the components, thereby affecting the machine performance and the product yield, at this time, if the temperature of the electrode plate is to be reduced, the cooling capacity of the cooling pipeline 10' needs to be enhanced, if the cooling capacity of the cooling pipeline 10 'is increased, the heater 8' needs to have high power to reach the set temperature in the standby state, and most of the heating energy is taken away by the cooling circulating water, thereby causing energy waste.
Disclosure of Invention
The invention provides a capacitance coupling plasma processor and a temperature adjusting method thereof, which are matched with a cooling pipeline and a fan, do not need to enhance the cooling capacity of the cooling pipeline and increase the power of a heater, save energy and enable the temperature of a reaction cavity to be more easily controlled.
In order to achieve the above object, the present invention provides a capacitively coupled plasma processor, comprising: the reaction chamber is internally provided with an upper electrode assembly and a lower electrode opposite to the upper electrode assembly, at least one radio frequency power supply is connected to the upper electrode assembly or the lower electrode, the upper electrode assembly comprises an upper electrode plate and a conductive mounting plate, the conductive mounting plate and the upper electrode plate are mutually fastened, a plurality of cooling pipelines are arranged in the conductive mounting plate, and cooling liquid flows through the cooling pipelines and is used for cooling the upper electrode assembly;
at least one heater disposed on the conductive mounting plate for heating the upper electrode assembly;
at least one fan disposed above the electrically conductive mounting plate for cooling the upper electrode assembly.
The upper electrode assembly further comprises a top cover located above the conductive mounting plate, an air-tight device is arranged between the top cover and the reaction cavity, air tightness between the top cover and the reaction cavity is achieved, a vacuum environment is arranged in the reaction cavity, and an atmospheric environment is arranged above the top cover.
The upper electrode assembly also comprises a temperature detector which is embedded in the upper electrode plate from the upper part of the upper electrode assembly through the conductive mounting plate so as to monitor the temperature of the upper electrode assembly.
The invention also provides a temperature adjusting method of the capacitive coupling plasma processor, which comprises the following steps:
when the temperature of the upper electrode assembly in the reaction cavity is lower than the set temperature, the heater is electrified to heat the upper electrode assembly, and when the temperature of the upper electrode assembly in the reaction cavity is higher than the set temperature, the heater is disconnected;
the cooling liquid in the cooling pipeline of the conductive mounting plate keeps circulating in the process state and the standby state of the capacitive coupling plasma processor;
when the capacitively coupled plasma processor is in a process state, the fan is turned on to cool the upper electrode assembly, and when the capacitively coupled plasma etching apparatus is in a standby state, the fan is turned off.
The cooling pipeline is connected to a cooling liquid source, and the cooling liquid source outputs cooling liquid with adjustable flow or temperature.
The cooling fluid source outputs a constant temperature and flow of cooling fluid when the capacitively coupled plasma processor is in a process state and in a standby state.
When the capacitive coupling plasma processor is in a standby state, the heater outputs heating power to heat the upper electrode assembly, and the cooling liquid source outputs cooling liquid to reduce the temperature, so that the upper electrode assembly is maintained at the standby temperature.
When the capacitive coupling plasma processor is in a process state, the cooling liquid source outputs cooling liquid with a first temperature and a first flow rate, and when the capacitive coupling plasma processor is in a standby state, the cooling liquid source outputs cooling liquid with a second temperature and a second flow rate, wherein the first temperature is lower than the second temperature, and the first flow rate is greater than the second flow rate. The invention uses the cooling pipeline and the fan in a matching way, does not need to enhance the cooling capacity of the cooling pipeline and increase the power of the heater, saves energy and ensures that the temperature of the reaction cavity is easier to control.
Drawings
Fig. 1 is a schematic diagram of heating and cooling of a prior art capacitively coupled plasma processor.
Fig. 2 is a schematic structural diagram of a capacitively coupled plasma processor according to the present invention.
Detailed Description
The preferred embodiment of the present invention is described in detail below with reference to fig. 2.
As shown in fig. 2, the present invention provides a capacitively coupled plasma processor, which includes a reaction chamber 1, wherein an upper electrode assembly and a lower electrode 3 disposed opposite to the upper electrode assembly are disposed in the reaction chamber 1, at least one rf power source 6 is connected to the upper electrode assembly or the lower electrode 3, rf power is applied to the upper electrode assembly or the lower electrode 3 to form an rf electric field between the upper electrode assembly and the lower electrode 3, and a process gas supplied into the reaction chamber is dissociated by the rf electric field to form a plasma for an etching process or a cleaning process. An electrostatic chuck 4 is provided on the lower electrode 3, and a substrate 5 is placed on the electrostatic chuck 4. The upper part of the reaction chamber 1 is opened to communicate with the atmospheric space so that the fan operates. The upper electrode assembly comprises an upper electrode plate 2 and a conductive mounting plate 9, the conductive mounting plate 9 and the upper electrode plate 2 are fastened with each other, temperature conduction with the upper electrode 2 can be realized, and meanwhile, the conductive mounting plate is hermetically connected with the reaction cavity 1 so as to ensure the sealing of the whole reaction cavity 1. A gas distribution device is arranged in the reaction chamber 1, and can be directly realized by the upper electrode plate 2 and the conductive mounting plate 9, and the gas distribution device is connected with a gas supply device 7 and used for conveying process gas into the reaction chamber 1. The gas distribution device adopts a gas spray header, and a plurality of gas distribution holes are formed in the upper electrode plate 2 and the conductive mounting plate 9, so that process gas can conveniently pass through the gas distribution holes and enter the reaction cavity 1 to be ionized to generate plasma, and a substrate is processed. Because the last gas distribution hole that has set up of electrically conductive mounting panel 9, in order to ensure the sealed of reaction chamber 1, set up top cap 13 above the gas distribution hole of electrically conductive mounting panel 9, contain airtight device between top cap 13 and the reaction chamber body, realize airtight between the two, be vacuum environment in the reaction chamber 1, top cap 13 top is atmospheric environment, then reaction chamber 1 wall, part electrically conductive mounting panel 9 and top cap 13 constitute a sealed reaction chamber jointly. The upper electrode assembly also comprises a temperature detector 12 which penetrates through the conductive mounting plate 9 from above the upper electrode assembly and then is embedded in the upper electrode plate 2 so as to monitor the temperature of the upper electrode assembly.
At least one heater 8 is arranged in the reaction chamber 1 and used for heating the upper electrode assembly and increasing the temperature in the reaction chamber 1, the heater 8 can be directly contacted with the upper electrode plate 2, or the heater 8 is contacted with the conductive mounting plate 9, and heat is conducted to the upper electrode plate 2 through the conductive mounting plate 9. When the temperature in the reaction chamber 1 is lower than the set temperature, the heater 8 is powered on to heat the upper electrode assembly, the number of the started heaters 8 is determined according to the actual situation, if the temperature is lower or the set temperature needs to be reached in a short time, more heaters 8 can be started, and when the temperature in the reaction chamber 1 is higher than the set temperature, the heaters 8 are disconnected.
Accordingly, a plurality of cooling pipes 10 are disposed in the conductive mounting plate 9, and a cooling fluid flows through the cooling pipes 10 to cool the upper electrode assembly, thereby reducing the temperature in the reaction chamber 1. The cooling liquid in the cooling pipe 10 of the conductive mounting plate 9 is kept in circulation in the process state and the standby state of the capacitively coupled plasma processor. The cooling conduit 10 is connected to a source of cooling fluid (not shown) that outputs a flow or temperature regulated cooling fluid. The cooling fluid source outputs a constant temperature and a constant flow rate of cooling fluid when the capacitively coupled plasma processor is in a process state and in a standby state, respectively, the cooling fluid source outputs a first temperature and a first flow rate of cooling fluid when the capacitively coupled plasma processor is in the process state, and the cooling fluid source outputs a second temperature and a second flow rate of cooling fluid when the capacitively coupled plasma processor is in the standby state, wherein the first temperature is lower than the second temperature, and the first flow rate is greater than the second flow rate.
When the capacitively coupled plasma processor is in a standby state, the heater 8 outputs heating power to heat the upper electrode assembly, and the cooling liquid source outputs cooling liquid to lower the temperature, so that the upper electrode assembly is maintained at a standby temperature.
In order to avoid a large surge in temperature when the capacitively coupled plasma processor is changed from a standby state to a process state, at least one fan 11 is added to cool the upper electrode assembly, the fan 11 is turned on only when the capacitively coupled plasma processor is in the process state, and the fan 11 is turned off when the capacitively coupled plasma processor is in the standby state, so that the set temperature is met without increasing the heater power when the capacitively coupled plasma processor is in the standby state, thereby saving energy, the number of fans 11 to be turned on is determined according to actual conditions, if the temperature is high, or the temperature needs to be cooled to the set temperature in a short time, a larger number of fans 11 can be turned on, or even all the fans 11 can be turned on.
The invention uses the cooling pipeline and the fan in a matching way, does not need to enhance the cooling capacity of the cooling pipeline and increase the power of the heater, saves energy and ensures that the temperature of the reaction cavity is easier to control. The plasma heating device is particularly suitable for the field of plasma processors, and the high-power radio frequency power and the plasma in the reaction cavity can rapidly heat the upper electrode, so that a cooling liquid pipeline with high flow rate is required to be arranged in the conductive mounting plate above the upper electrode plate in order to ensure that the temperature of the upper electrode is not overhigh. However, when the plasma processor is in standby state, on one hand, no rf power is input, but the inside of the plasma processor still needs to maintain a sufficient temperature (close to the temperature during the plasma process) to keep the inside of the plasma processor in an optimal state, so that the next plasma processing process can be rapidly started. In the standby heat preservation process, the heater is required to continuously heat the upper electrode assembly, and meanwhile, the cooling liquid cannot stop flowing or has too low flow rate, because the too low flow rate can cause precipitation in the cooling liquid, and the condition of the cooling liquid pipeline is worsened. Therefore, during the standby process, both heating and cooling are performed, and the two are offset, and finally, an equilibrium standby temperature is reached. The invention adds the top fan for auxiliary cooling in the plasma processing process, so the cooling liquid pipeline can be set smaller, or the length of the pipeline is shortened, the cooling speed of the cooling pipeline is reduced, and in the standby stage, the pipelines with lower cooling capacity and the lower heating power of the heater can be mutually offset to reach the balanced standby temperature. Therefore every cooling pipe cooling power that reduces 1KW can reduce the heater power about 1KW in the standby state simultaneously, can reduce 2 KW's power loss when the standby finally. Compared with a small amount of cost caused by the cooling fan which is only added in the plasma processing state, the invention has obvious effects of saving energy and reducing the operation cost.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (8)
1. A capacitively coupled plasma processor, comprising: the reaction chamber is internally provided with an upper electrode assembly and a lower electrode opposite to the upper electrode assembly, and at least one radio frequency power supply is connected to the upper electrode assembly or the lower electrode;
at least one heater disposed on the conductive mounting plate for heating the upper electrode assembly;
at least one fan disposed above the electrically conductive mounting plate for cooling the upper electrode assembly.
2. The capacitively coupled plasma processor of claim 1 wherein the upper electrode assembly further includes a top cover positioned over the conductive mounting plate, the top cover including an air-tight arrangement with the reaction chamber for providing an air-tight seal therebetween, the reaction chamber having a vacuum environment therein and the top cover having an atmospheric environment therein.
3. The capacitively coupled plasma processor of claim 1 wherein the upper electrode assembly further includes a temperature sensor embedded in the upper electrode plate through the conductive mounting plate from above the upper electrode assembly for monitoring the temperature of the upper electrode assembly.
4. A method for temperature regulation in a capacitively coupled plasma processor as claimed in claim 1, including the steps of:
when the temperature of the upper electrode assembly in the reaction cavity is lower than the set temperature, the heater is electrified to heat the upper electrode assembly, and when the temperature of the upper electrode assembly in the reaction cavity is higher than the set temperature, the heater is disconnected;
the cooling liquid in the cooling pipeline of the conductive mounting plate keeps circulating in the process state and the standby state of the capacitive coupling plasma processor;
when the capacitively coupled plasma processor is in a process state, the fan is turned on to cool the upper electrode assembly, and when the capacitively coupled plasma etching apparatus is in a standby state, the fan is turned off.
5. A method for temperature adjustment in a capacitively coupled plasma processor as claimed in claim 4, wherein the cooling duct is connected to a source of cooling fluid, the source of cooling fluid outputting a flow or temperature adjustable cooling fluid.
6. The method of claim 5 wherein the coolant source outputs a constant temperature and flow of coolant when the capacitively coupled plasma processor is in the process state and in the standby state.
7. The temperature conditioning method for a capacitively coupled plasma processor of claim 5 wherein the capacitively coupled plasma processor is in a standby mode in which the heater outputs heating power to heat the upper electrode assembly while the coolant source outputs coolant to reduce the temperature so that the upper electrode assembly is maintained at a standby temperature.
8. The method of claim 5 wherein the coolant source outputs a first temperature and a first flow rate of coolant when the capacitively coupled plasma processor is in the process mode, and a second temperature and a second flow rate of coolant when the capacitively coupled plasma processor is in the standby mode, wherein the first temperature is lower than the second temperature and the first flow rate is greater than the second flow rate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811606367.2A CN111383881B (en) | 2018-12-27 | 2018-12-27 | Capacitive coupling plasma processor and temperature adjusting method thereof |
| TW108145536A TWI767166B (en) | 2018-12-27 | 2019-12-12 | Capacitively coupled plasma processor and method for adjusting temperature thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811606367.2A CN111383881B (en) | 2018-12-27 | 2018-12-27 | Capacitive coupling plasma processor and temperature adjusting method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111383881A true CN111383881A (en) | 2020-07-07 |
| CN111383881B CN111383881B (en) | 2023-03-07 |
Family
ID=71216264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811606367.2A Active CN111383881B (en) | 2018-12-27 | 2018-12-27 | Capacitive coupling plasma processor and temperature adjusting method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN111383881B (en) |
| TW (1) | TWI767166B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060000551A1 (en) * | 2004-06-30 | 2006-01-05 | Saldana Miguel A | Methods and apparatus for optimal temperature control in a plasma processing system |
| CN101335192A (en) * | 2007-06-27 | 2008-12-31 | 东京毅力科创株式会社 | Substrate processing apparatus and shower head |
| CN101842877A (en) * | 2007-10-31 | 2010-09-22 | 朗姆研究公司 | Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body |
| CN102187742A (en) * | 2008-10-17 | 2011-09-14 | 应用材料公司 | Methods and apparatus for rapidly responsive heat control in plasma processing devices |
-
2018
- 2018-12-27 CN CN201811606367.2A patent/CN111383881B/en active Active
-
2019
- 2019-12-12 TW TW108145536A patent/TWI767166B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060000551A1 (en) * | 2004-06-30 | 2006-01-05 | Saldana Miguel A | Methods and apparatus for optimal temperature control in a plasma processing system |
| CN101335192A (en) * | 2007-06-27 | 2008-12-31 | 东京毅力科创株式会社 | Substrate processing apparatus and shower head |
| CN101842877A (en) * | 2007-10-31 | 2010-09-22 | 朗姆研究公司 | Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body |
| CN102187742A (en) * | 2008-10-17 | 2011-09-14 | 应用材料公司 | Methods and apparatus for rapidly responsive heat control in plasma processing devices |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202025862A (en) | 2020-07-01 |
| TWI767166B (en) | 2022-06-11 |
| CN111383881B (en) | 2023-03-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI759414B (en) | Processing apparatus for processing target object | |
| KR101020357B1 (en) | Temperature control device for target substrate, temperature control method and plasma processing apparatus including same | |
| JP4256031B2 (en) | Processing apparatus and temperature control method thereof | |
| US20110269314A1 (en) | Process chambers having shared resources and methods of use thereof | |
| JP2002168551A (en) | Cooling device for electrode of treating device | |
| JP5841281B1 (en) | Chiller device for plasma processing equipment | |
| JP4615335B2 (en) | Temperature control system and substrate processing apparatus | |
| KR20140044862A (en) | Stage temperature control device and substrate processing device | |
| KR101039085B1 (en) | Plasma processing apparatus and plasma processing method | |
| TWI743303B (en) | Processing apparatus for processing target object | |
| TWI588631B (en) | A method for controlling processing temperature in semiconductor fabrication, a method for processing a semiconductor wafer, and a processing apparatus for processing a semiconductor wafer | |
| KR20190011686A (en) | Substrate processing apparatus, and operation method for substrate processing apparatus | |
| US11869750B2 (en) | Plasma processing apparatus | |
| JP2012049393A (en) | Plasma processing apparatus | |
| CN111383881B (en) | Capacitive coupling plasma processor and temperature adjusting method thereof | |
| US20210313202A1 (en) | Substrate support | |
| CN104302084B (en) | Air cooled faraday shield and methods for using the same | |
| TW201939607A (en) | Condensation suppressing method and processing system | |
| JP2000232098A (en) | Control method for sample temperature and vacuum process device | |
| CN112420583A (en) | Mounting table and plasma processing apparatus | |
| JPH07135182A (en) | Heat-treating device | |
| CN109727838B (en) | Plasma generating cavity and semiconductor processing equipment | |
| TWI817617B (en) | Variable thermal conductivity temperature control components, methods, systems and plasma processing devices | |
| US20220301830A1 (en) | Plasma processing apparatus | |
| JP2656658B2 (en) | Sample temperature control method and vacuum processing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |