CN111370558A - Quantum dot LED packaging structure and manufacturing method thereof - Google Patents
Quantum dot LED packaging structure and manufacturing method thereof Download PDFInfo
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- CN111370558A CN111370558A CN202010249901.XA CN202010249901A CN111370558A CN 111370558 A CN111370558 A CN 111370558A CN 202010249901 A CN202010249901 A CN 202010249901A CN 111370558 A CN111370558 A CN 111370558A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
The invention relates to the technical field of semiconductor lighting, in particular to a quantum dot LED packaging structure and a manufacturing method thereof. The LED packaging structure comprises a substrate, side baffles are integrally formed at two ends of the substrate, an LED chip is arranged in the substrate, an inner barrier layer is arranged at the top of the substrate, one side of the inner barrier layer, which is close to the LED chip, is inwards recessed to form a groove, a quantum dot layer is arranged in the groove, and a silica gel layer covers the quantum dot layer and the LED chip. The invention adopts the quantum dot light-emitting technology, the light-emitting peak of the quantum dot is narrow, the light-emitting color can be adjusted along with the size of the quantum dot, the light-emitting efficiency is high, meanwhile, the integral heat-radiating performance is good, the heat accumulation can be avoided, and the integral service life is prolonged.
Description
Technical Field
The invention relates to the technical field of semiconductor lighting, in particular to a quantum dot LED packaging structure and a manufacturing method thereof.
Background
When electrons and holes are recombined, visible light is radiated, so that the light-emitting diode can be manufactured. In circuits and instruments as indicator lights or to form text or numerical displays. Gallium arsenide diodes emit red light, gallium phosphide diodes emit green light, silicon carbide diodes emit yellow light, and gallium nitride diodes emit blue light. In the existing liquid crystal display, a white light LED is generally adopted as a backlight source, the most common white light LED is a structure of a blue light emitting chip and yellow YAG fluorescent powder, the color saturation of a liquid crystal screen adopting the LED is low, the color is not bright enough, and meanwhile, the heat generated by an LED light source cannot be timely LED out due to the strong integral sealing property of the LED, so that the service life of the LED is influenced.
Disclosure of Invention
The present invention is directed to a quantum dot LED package structure and a method for manufacturing the same, so as to solve the problems of the background art.
In order to achieve the above object, in one aspect, the present invention provides a quantum dot LED package structure, which includes a substrate, side baffles are integrally formed at two ends of the substrate, an LED chip is disposed inside the substrate, an inner barrier layer is disposed on the top of the substrate, a groove is recessed inward on one side of the inner barrier layer close to the LED chip, a quantum dot layer is disposed inside the groove, and a silica gel layer covers between the quantum dot layer and the LED chip.
As a further improvement of the technical scheme, the side baffle is of a right-angle trapezoid structure, the inner wall of the side baffle is provided with reflecting plates in parallel, and the reflecting plates are symmetrically arranged on two sides of the LED chip.
As a further improvement of the technical scheme, the bottom of the base plate is symmetrically provided with a pair of bottom grooves, and the outer wall of the side baffle is provided with a plurality of side grooves.
As a further improvement of the technical scheme, the outer wall of the inner barrier layer is provided with an outer protective film, and the inner barrier layer and the outer protective film are of arc-shaped structures which are sunken downwards.
As a further improvement of the technical scheme, clamping pins are integrally formed at two ends of the inner barrier layer and the outer protective film and are arranged at the top of the side baffle.
In another aspect, the present invention provides a method for manufacturing a quantum dot LED package structure, including any one of the above quantum dot LED package structures, including the steps of:
s1, mounting the LED chip at the center of the inner part of the substrate;
s2, pasting the two reflection plates along the inner wall of the side baffle, and adhering and fixing the two reflection plates by adopting glass cement;
s3, filling the substrate with silica gel to form a silica gel layer;
s4, placing the quantum dot layer in the groove;
s5, clamping the inner barrier layer on the top of the substrate, and adhering the clamping pins on the two sides of the inner barrier layer with the top of the side baffle plate through sealant;
and S6, attaching an outer protective film to the outer wall of the inner barrier layer, and forming the outer protective film and the inner barrier layer through UV curing.
As a further improvement of the technical scheme, the LED chip is a blue LED chip.
As a further improvement of the technical solution, the preparation method of the quantum dot layer comprises: and dispersing the quantum dots in the optical adhesive layer, clamping and packaging the optical adhesive layer by using two high-barrier films, carrying out UV curing, and forming to form a quantum dot layer.
As a further improvement of the technical scheme, the quantum dots are formed by combining zinc atoms, cadmium atoms, selenium atoms and sulfur atoms.
Compared with the prior art, the invention has the beneficial effects that: in the quantum dot LED packaging structure and the manufacturing method thereof, a quantum dot light-emitting technology is adopted, the light-emitting peak of the quantum dot is narrow, the light-emitting color is adjustable along with the size of the quantum dot, the light-emitting efficiency is high, meanwhile, the overall heat radiation performance is good, heat accumulation can be avoided, and the overall service life is prolonged.
Drawings
FIG. 1 is a schematic view of the overall structure in embodiment 1;
FIG. 2 is a spectrum chart in example 1;
FIG. 3 is a conventional LED light source spectrum.
The various reference numbers in the figures mean:
100. a substrate; 101. a side dam; 102. an LED chip; 103. a launch plate; 104. a bottom groove; 105. a side groove; 106. a silica gel layer;
200. an inner barrier layer;
300. a groove; 301. a quantum dot layer;
400. an outer protective film; 401. and (7) clamping the pins.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Referring to fig. 1-3, an object of the present embodiment is to provide a quantum dot LED package structure, which includes a substrate 100, side baffles 101 integrally formed at two ends of the substrate 100, an LED chip 102 disposed inside the substrate 100, an inner barrier layer 200 disposed on a top of the substrate 100, a groove 300 recessed inward on a side of the inner barrier layer 200 close to the LED chip 102, a quantum dot layer 301 disposed inside the groove 300, and a silicone layer 106 covering between the quantum dot layer 301 and the LED chip 102.
In this embodiment, the inner barrier layer 200 includes one or more of silicon dioxide, aluminum nitride silicon nitride composite, aluminum oxide, aluminum, silver, lead, and tin, which are all low water and oxygen permeability materials.
Further, side shield 101 is the right trapezoid structure, and side shield 101 is located base plate 100 both sides, make base plate 100 both sides have the spotlight effect, side shield 101's inner wall parallel arrangement has reflecting plate 103, reflecting plate 103 adopts the speculum material to make, and simultaneously, reflecting plate 103 symmetry sets up and makes the light source that LED chip 102 sent gather to quantum dot layer 301 department through reflecting plate 103 in LED chip 102 both sides, reduces the consumption of light scattering, promotes the light effect.
Specifically, the pair of bottom grooves 104 is symmetrically formed in the bottom of the substrate 100, so that the substrate 100 has a hollow structure, heat dissipation is facilitated at the bottom of the substrate 100, and the service life of the LED chip 102 is prolonged.
In addition, a plurality of side grooves 105 are formed in the outer wall of the side baffle 101, and the side grooves 105 are formed along the longitudinal direction of the side baffle 101, so that heat generated in the substrate 100 can be conveniently led out through the side grooves 105, and heat accumulation in the substrate 100 can be avoided.
In addition, the outer protective film 400 is disposed on the outer wall of the inner barrier layer 200, the outer protective film 400 is one or more of an epoxy resin injection molding compound, ceramic, a sheet molding compound, and a liquid crystal polymer, so that the outer protective film 400 has a certain protection effect, and meanwhile, the outer protective film has a strong light transmission effect, and the inner barrier layer 200 and the outer protective film 400 are in an arc structure recessed downwards, so that light rays diffused outwards are generated when the light rays penetrate through the inner barrier layer 200 and the outer protective film 400, and the light ray irradiation range is enlarged.
It should be noted that, the inner barrier layer 200 and the outer protective film 400 are integrally formed at two ends thereof with the locking pin 401, and the locking pin 401 is installed at the top of the side barrier 101, so that the inner barrier layer 200 and the outer protective film 400 are installed at the top of the side barrier 101, thereby achieving the sealing effect inside the substrate 100.
Another object of the present invention is to provide a method for manufacturing a quantum dot LED package structure, including any one of the foregoing quantum dot LED package structures, including the following steps:
s1, mounting the LED chip 102 at the center position inside the substrate 100;
s2, adhering the two reflection plates 103 along the inner wall of the side baffle 101 and fixing the two reflection plates by adopting glass cement;
s3, filling the substrate 100 with silica gel to form a silica gel layer 106;
s4, placing the quantum dot layer 301 in the groove 300;
s5, clamping the inner barrier layer 200 on the top of the substrate 100, and adhering the clamping pins 401 on the two sides of the inner barrier layer 200 and the top of the side baffle plate 101 through a sealant;
s6, the outer protective film 400 is pasted on the outer wall of the inner barrier layer 200, and the space between the outer protective film 400 and the inner barrier layer 200 is formed through UV curing.
In this embodiment, the LED chip 102 is a blue LED chip, which can efficiently emit red, green, and blue lights, and can extend the color gamut to 100% NTSC and above.
Specifically, the preparation method of the quantum dot layer 301 comprises the following steps: the quantum dots are dispersed in the optical adhesive layer, and are sandwiched and encapsulated by two high barrier films, and are UV-cured to form the quantum dot layer 301, wherein the thickness of the quantum dot layer 301 is preferably 110 um.
It is worth noting that quantum dots are made of a combination of zinc, cadmium, selenium, and sulfur atoms.
The quantum dots are synthesized by a reverse microemulsion method, wherein the reverse microemulsion method is a method for synthesizing nano by using reverse microemulsion as a microreactor.
Among them, the synthesis of quantum dots employs a thermal decomposition method, which is a method of synthesizing nanocrystals by nucleation and growth through decomposition of reactants in a high-boiling solvent at a certain temperature.
Light source effect comparison table of existing LED light source and quantum dot layer 301 in the embodiment
As can be seen from the table, the color gamut of the quantum dot backlight is improved.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and the preferred embodiments of the present invention are described in the above embodiments and the description, and are not intended to limit the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (9)
1. A quantum dot LED packaging structure comprises a substrate (100), and is characterized in that: both ends integrated into one piece of base plate (100) has side shield (101), the inside of base plate (100) is provided with LED chip (102), the top of base plate (100) is provided with interior barrier layer (200), interior barrier layer (200) are close to LED chip (102) one side and inwards cave in recess (300), the inside of recess (300) is equipped with quantum dot layer (301), it has silica gel layer (106) to cover between quantum dot layer (301) and LED chip (102).
2. The quantum dot LED package structure of claim 1, wherein: the side baffle (101) is of a right-angle trapezoid structure, the inner wall of the side baffle (101) is provided with a reflecting plate (103) in parallel, and the reflecting plate (103) is symmetrically arranged on two sides of the LED chip (102).
3. The quantum dot LED package structure of claim 1, wherein: the bottom of the base plate (100) is symmetrically provided with a pair of bottom grooves (104), and the outer wall of the side baffle (101) is provided with a plurality of side grooves (105).
4. The quantum dot LED package structure of claim 1, wherein: the outer wall of the inner barrier layer (200) is provided with an outer protective film (400), and the inner barrier layer (200) and the outer protective film (400) are of arc-shaped structures which are sunken downwards.
5. The quantum dot LED package structure of claim 4, wherein: the two ends of the inner barrier layer (200) and the outer protective film (400) are integrally formed with clamping pins (401), and the clamping pins (401) are installed at the top of the side baffle (101).
6. A method for manufacturing a quantum dot LED package structure, comprising the quantum dot LED package structure of any one of claims 1-5, wherein: the method comprises the following steps:
s1, mounting the LED chip (102) at the inner center position of the substrate (100);
s2, adhering two reflecting plates (103) along the inner wall of the side baffle (101) and fixing the reflecting plates by adopting glass cement;
s3, filling the substrate (100) with silica gel to form a silica gel layer (106);
s4, placing the quantum dot layer (301) in the groove (300);
s5, clamping the inner barrier layer (200) on the top of the substrate (100), and adhering the clamping pins (401) on the two sides of the inner barrier layer (200) to the top of the side baffle (101) through sealing glue;
and S6, attaching the outer protective film (400) to the outer wall of the inner barrier layer (200), and forming between the outer protective film (400) and the inner barrier layer (200) through UV curing.
7. The manufacturing method of the quantum dot LED packaging structure of claim 6, wherein: the LED chip (102) is a blue LED chip.
8. The manufacturing method of the quantum dot LED packaging structure of claim 6, wherein: the preparation method of the quantum dot layer (301) comprises the following steps: the quantum dots are dispersed in the optical adhesive layer, are packaged by two high-barrier films, are subjected to UV curing, and are molded to form a quantum dot layer (301).
9. The manufacturing method of the quantum dot LED packaging structure according to claim 8, wherein: the quantum dots are formed by combining zinc atoms, cadmium atoms, selenium atoms and sulfur atoms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010249901.XA CN111370558A (en) | 2020-04-01 | 2020-04-01 | Quantum dot LED packaging structure and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010249901.XA CN111370558A (en) | 2020-04-01 | 2020-04-01 | Quantum dot LED packaging structure and manufacturing method thereof |
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| CN202010249901.XA Pending CN111370558A (en) | 2020-04-01 | 2020-04-01 | Quantum dot LED packaging structure and manufacturing method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105098039A (en) * | 2015-06-05 | 2015-11-25 | 青岛海信电器股份有限公司 | Quantum dot light-emitting component, backlight module and display device |
| CN106505134A (en) * | 2016-11-30 | 2017-03-15 | 广东晶科电子股份有限公司 | A kind of quantum spot white light LED device and preparation method thereof |
| CN106960900A (en) * | 2017-03-15 | 2017-07-18 | 惠州市华瑞光源科技有限公司 | Quantum dot LED encapsulation structure |
| CN206819992U (en) * | 2017-06-09 | 2017-12-29 | 易美芯光（北京）科技有限公司 | A kind of LED encapsulation structure with barrier membrane material |
| CN107565003A (en) * | 2017-07-31 | 2018-01-09 | 深圳市华星光电技术有限公司 | Quantum dot LED encapsulation structure |
-
2020
- 2020-04-01 CN CN202010249901.XA patent/CN111370558A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105098039A (en) * | 2015-06-05 | 2015-11-25 | 青岛海信电器股份有限公司 | Quantum dot light-emitting component, backlight module and display device |
| CN106505134A (en) * | 2016-11-30 | 2017-03-15 | 广东晶科电子股份有限公司 | A kind of quantum spot white light LED device and preparation method thereof |
| CN106960900A (en) * | 2017-03-15 | 2017-07-18 | 惠州市华瑞光源科技有限公司 | Quantum dot LED encapsulation structure |
| CN206819992U (en) * | 2017-06-09 | 2017-12-29 | 易美芯光（北京）科技有限公司 | A kind of LED encapsulation structure with barrier membrane material |
| CN107565003A (en) * | 2017-07-31 | 2018-01-09 | 深圳市华星光电技术有限公司 | Quantum dot LED encapsulation structure |
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Address after: Building 3, 38 Lianhuan Road, Dalingshan Town, Dongguan City, Guangdong Province 523000 Applicant after: Guangdong Liangyou Technology Co.,Ltd. Address before: Dayuan Industrial Zone, Dongfeng North Road, Xinan village, Shijie Town, Dongguan City, Guangdong Province Applicant before: DONGGUAN LIANGYOU HARDWARE PRODUCTS Co.,Ltd. |
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Application publication date: 20200703 |
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