CN111367148A - Optical proximity correction method for curve pattern - Google Patents
Optical proximity correction method for curve pattern Download PDFInfo
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- CN111367148A CN111367148A CN202010279739.6A CN202010279739A CN111367148A CN 111367148 A CN111367148 A CN 111367148A CN 202010279739 A CN202010279739 A CN 202010279739A CN 111367148 A CN111367148 A CN 111367148A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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Abstract
The invention provides a curve graph optical proximity correction method, which is characterized in that after an imported original design graph is subjected to optical proximity correction, filling fitting processing is carried out on the curve graph to form a standard graph; the step of fill-fitting process comprises: arranging an array of standard filling patterns in a set area containing the side line of the curve pattern; using the standard fill pattern intersecting the curve pattern as a fill fit pattern having an overlapping portion overlapping the curve pattern and a non-overlapping portion not overlapping the curve pattern; forming the standard pattern by combining the curve patterns with the non-overlapping portion or removing the overlapping portion. The invention forms the standard graph by filling and fitting the curve graph of the silicon optical device, so that the graph of the domain accords with the standard of the conventional photomask, and the production cost of the photomask is reduced while the optical proximity correction result is close to the original graph.
Description
Technical Field
The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a curve pattern optical proximity correction method.
Background
The silicon optical device process can realize the preparation and integration of the optical device by adopting the silicon-based substrate based on the existing CMOS process, and is a new generation of photonic device manufacturing technology with wide application prospect. In the layout of the silicon optical device, a large number of curve patterns which are different from the traditional chip layout and used for forming the optical device exist, and the optical device has higher requirements on the roughness of the edge of the pattern.
At present, when Optical Proximity Correction (OPC) is performed on a silicon optical device layout, generally, only a curve pattern therein is converted into a pattern conforming to Manhattan design rules, and then optical proximity correction is performed. This will increase the roughness of the edges of the silicon photo device structure, leading to increased waveguide loss of the optical device it forms. In addition, a layout parasitic parameter extraction process (LPE) is introduced during optical proximity correction or a special mask manufacturing process is adopted to improve the method so as to match the curve pattern in the silicon optical device. However, the above method has a problem that a desired effect cannot be obtained or a manufacturing cost is additionally increased.
Therefore, it is necessary to provide a new method for correcting the optical proximity of a curved pattern to solve the above problems.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a curve pattern optical proximity correction method, which is used to solve the problem that the curve pattern of the silicon optical device in the prior art cannot be corrected well by optical proximity correction.
In order to achieve the above and other related objects, the present invention provides a method for correcting optical proximity of a curved pattern, wherein after an original design pattern is subjected to optical proximity correction, a standard pattern is formed by performing a fill-fit process on the curved pattern; the step of fill-fitting process comprises:
arranging an array of standard filling patterns in a set area containing the side line of the curve pattern;
using the standard fill pattern intersecting the curve pattern as a fill fit pattern having an overlapping portion overlapping the curve pattern and a non-overlapping portion not overlapping the curve pattern;
forming the standard pattern by combining the curve patterns with the non-overlapping portion or removing the overlapping portion.
As an alternative of the invention, the standard fill pattern is a square, the array of squares being arranged in horizontal and vertical directions.
As an alternative of the invention, the sides of the square range from 1 nm to 50 nm.
As an alternative of the invention, the side length of the square is the minimum cell size of the photomask.
As an alternative of the present invention, the decision of causing the curve pattern to incorporate the non-overlapping portion or to remove the overlapping portion includes: setting an area judgment threshold; when the area of the overlapped part of the standard filling graph and the curve graph is larger than the area judgment threshold value, combining the non-overlapped part of the curve graph; and when the area of the overlapped part of the standard filling graph and the curve graph is smaller than the area judgment threshold value, removing the overlapped part from the curve graph.
As an alternative of the present invention, the area judgment threshold value ranges from 20% to 80% of the area of the standard fill pattern.
As an alternative of the present invention, when the area of the overlapping portion of the standard fill pattern and the curve pattern is equal to the area judgment threshold, the curve pattern is caused to incorporate the non-overlapping portion.
As an alternative of the present invention, when the area of the overlapping portion of the standard fill pattern and the curve pattern is equal to the area judgment threshold, the curve pattern is made to remove the overlapping portion.
As an alternative of the present invention, before the fill-fitting process is performed on the curve pattern, a step of setting a sub-resolution auxiliary pattern is further included.
As an alternative of the invention, the fill-fit process also comprises a process for the sub-resolution auxiliary pattern.
As an alternative of the present invention, after the filling and fitting process is performed on the curve pattern, the method further includes the steps of performing design rule checking, optical proximity correction verification, and deriving a final design pattern.
As an alternative of the present invention, after the optical proximity correction verification, when the result of the optical proximity correction verification does not meet a preset target, the method further includes performing the iterative steps of the optical proximity correction, the fill-fit processing, the design rule check, and the optical proximity correction verification again on the basis of the current optical proximity correction result until the result of the optical proximity correction verification meets a preset target.
As an alternative of the invention, the curve graph optical proximity correction method is used for the optical proximity correction process of the silicon optical device layout.
As described above, the present invention provides a curved pattern optical proximity correction method, which has the following advantages:
the invention introduces a new curve graph optical proximity correction method, and fills and fits the curve graph of the silicon optical device to form a standard graph, so that the graph of the domain conforms to the standard of the conventional photomask, and the production cost of the photomask is reduced while the optical proximity correction result is ensured to be close to the original graph.
Drawings
Fig. 1 is a flowchart illustrating a method for correcting optical proximity of a curved pattern according to an embodiment of the present invention.
Fig. 2 is a partial schematic view of an original design pattern provided in the first embodiment of the invention.
FIG. 3 is a partial schematic view of an embodiment of the invention after optical proximity correction and sub-resolution auxiliary pattern setting.
Fig. 4 is a partial schematic view of a fill-fit process according to an embodiment of the invention.
Fig. 5 is a flowchart illustrating a fill-fit process provided in the first embodiment of the invention.
FIG. 6 is an enlarged view of a portion of the edge of a curved line in accordance with one embodiment of the present invention.
Fig. 7 is a partially enlarged view of a reference line formed in a predetermined area according to an embodiment of the invention.
Fig. 8 is a partially enlarged view of a square array arranged in a predetermined area according to an embodiment of the present invention.
FIG. 9 is a partial enlarged view of a standard pattern formed in the first embodiment of the present invention.
Description of the element reference numerals
101 original design pattern
102 sub-resolution auxiliary graphics
S1-S5 Steps 1) -5)
S2-1 ~ S2-3 steps 2-1) -2-3)
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 9. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
Referring to fig. 1 to 9, the present embodiment provides a method for optical proximity correction of a curved pattern, which is characterized in that after the optical proximity correction is performed on an imported original design pattern, a filling and fitting process is performed on the curved pattern to form a standard pattern.
As an example, as shown in fig. 1, it is a flow chart of optical proximity correction for curve pattern of silicon optical device in this embodiment, which includes the following steps:
1) importing an original design graph;
2) optical proximity correction, setting of sub-resolution auxiliary graphs and filling fitting processing;
3) checking a design rule;
4) verifying optical proximity correction;
5) and deriving a final design graph.
In step 1), please refer to step S1 of fig. 1 and fig. 2, and import the original design graph (layout input). As shown in fig. 2, a partial schematic view of the imported original design pattern 101 is shown. The imported original design graph comprises a curve graph with a curve edge which is not subjected to Manhattan design in a silicon optical device design layout. Such curve patterns generally cannot be optically proximity corrected according to the criteria of conventional manhattan rule patterns.
In step 2), please refer to step S2 of fig. 1 and fig. 3 to 4, Optical Proximity Correction (OPC), setting sub-resolution assist feature (SRAF), and fill-and-fit process. As shown in fig. 3, in addition to the optical proximity correction, a sub-resolution auxiliary pattern 102 is provided at a position near the curved pattern in accordance with the degree of density of the pattern. As shown in fig. 4, the fill-fit process is performed on the pattern after the optical proximity correction and the sub-resolution auxiliary pattern addition. The specific process of the fill-fit process is described in detail below. It should be noted that fig. 4 is only a macroscopic schematic diagram, in which the curve graph after the fill-fit process has met the manhattan design rules on a microscopic scale. Optionally, the fill-fit process also includes processing for the sub-resolution auxiliary pattern.
In step 3), please refer to step S3 of fig. 1, Design Rule Check (DRC). And (3) carrying out design rule check on the graph which is subjected to the optical proximity correction and filling fitting process in the step (2), and returning to the step (2) to carry out the optical proximity correction, the arrangement of the sub-resolution auxiliary graph and the filling fitting process again if the graph part which violates the design rule is found by the check until the design rule check is passed.
In step 4), please refer to step S4 of fig. 1, optical proximity correction verification (OPC verify). And verifying the graph after the optical proximity correction, performing analog simulation on the optical proximity correction result, performing corresponding modification and adjustment if the graph part does not accord with the design expectation, and performing the optical proximity correction again until the verified optical proximity correction result accords with the expectation standard.
In step 5), please refer to step S5 of fig. 1, derive the Final design graph (Final layout). After the filling fitting treatment of the invention is carried out on the imported original design graph, a standard graph sideline is formed, so that the exported final design graph accords with the standard of a conventional photomask. The photomask manufacturer can directly produce the photomask based on the standard of the conventional mask according to the derived layout data without adopting a special manufacturing process aiming at the layout of the silicon optical device. Therefore, the invention ensures that the optical proximity correction result is close to the original pattern, and simultaneously reduces the manufacturing cost of the photomask.
The above steps describe the process of performing optical proximity correction on the curve pattern of the silicon optical device in this embodiment, and the filling and fitting process in step 2) is further described in detail below.
As an example, as shown in fig. 5 to 9, the step of the fill fitting process includes:
2-1) arranging an array of standard filling patterns in a set area containing the side line of the curve pattern;
2-2) using the standard fill pattern intersecting the curve pattern as a fill fit pattern having an overlapping portion overlapping the curve pattern and a non-overlapping portion not overlapping the curve pattern;
2-3) forming the standard pattern by merging the curve patterns with the non-overlapping portion or removing the overlapping portion.
In step 2-1), please refer to step S2-1 of fig. 5 and fig. 6 to 8, the array of standard fill patterns is arranged in the setting area including the edge of the curve pattern.
Fig. 6 is a partially enlarged view of the edge of the curve pattern to be subjected to the fill-fit process in this embodiment. As can be seen in fig. 6, the edges of the curved pattern 101 are curved and do not conform to the manhattan design rule.
As shown in fig. 7, as indicated by the dashed lines, reference lines are disposed on two sides of the side line of the curve graph and are equidistant from and parallel to the side line, and the region sandwiched by the two dashed reference lines is the setting region in this embodiment. In addition, fig. 7 to 9 do not indicate the filling pattern of the curve pattern for the sake of clarity of illustrating the processing procedure for the curve pattern edge line.
As shown in fig. 8, a square array is arranged in the setting region. Wherein incomplete squares near the reference line in the defined area are not shown. It should be noted that in this embodiment, for the sake of clarity, the squares are illustrated with a spacing therebetween, but each square in the actually used square array may be closely arranged without a spacing therebetween. Optionally, the array of squares is arranged in horizontal and vertical directions, the sides of the squares range from 1 nm to 50 nm, set with reference to the minimum cell size of the photomask, or the sides of the squares are the minimum cell size of the photomask. The minimum unit size of the photomask is the minimum size that can be set during the photomask design process.
It should be noted that the setting method of the setting area is not limited to the scheme of setting the reference line in this embodiment, and in other embodiments of the present invention, the setting method of the setting area may be adjusted accordingly as long as the setting method includes the curved line graph edge and the standard filling pattern arranged and filled in the curved line graph edge can intersect with the curved line graph edge.
In step 2-2), please refer to step S2-2 of fig. 5 and fig. 8, the standard fill pattern intersecting the curve pattern is used as a fill fit pattern, and the fill fit pattern has an overlapping portion overlapping the curve pattern and a non-overlapping portion not overlapping the curve pattern.
As shown in fig. 8, in the normal fill pattern intersecting the curve pattern, there are an overlapping portion overlapping the curve pattern and a non-overlapping portion not overlapping the curve pattern.
In step 2-3), referring to step S2-3 of fig. 5 and fig. 8 to 9, the standard pattern is formed by merging the curve patterns with the non-overlapping portion or removing the overlapping portion.
As shown by the thick solid line in fig. 9, the edge line of the standard pattern is formed, which has been in accordance with the manhattan design rule, and the layout design data can be directly provided to the photomask manufacturer for photomask manufacturing according to the conventional photomask standard.
As an example, as shown in fig. 8 and 9, the judgment basis for merging the non-overlapping portion or removing the overlapping portion of the curve graph includes: setting an area judgment threshold; when the area of the overlapped part of the standard filling graph and the curve graph is larger than the area judgment threshold value, combining the non-overlapped part of the curve graph; and when the area of the overlapped part of the standard filling graph and the curve graph is smaller than the area judgment threshold value, removing the overlapped part from the curve graph. Optionally, the area judgment threshold is in a range of 20% to 80% of the area of the standard fill pattern. In this embodiment, the area judgment threshold is set to 50% of the area of the standard fill pattern. That is, when the area of the overlapping portion of the standard fill pattern and the curved pattern is greater than 50% of the area of the standard fill pattern, the curved pattern is made to merge the non-overlapping portion; and when the area of the overlapped part of the standard filling pattern and the curve pattern is less than 50% of the area of the standard filling pattern, removing the overlapped part of the curve pattern.
As an example, when the area of the overlapping portion of the standard fill pattern and the curve pattern is equal to the area determination threshold, the curve pattern is caused to incorporate the non-overlapping portion. Or when the area of the overlapped part of the standard filling graph and the curve graph is equal to the area judgment threshold value, removing the overlapped part of the standard filling graph and the curve graph. That is, for a partial square whose overlapping partial area is equal to the area judgment threshold, it may be selected to be combined with the curve pattern or to be removed from the curve pattern according to actual needs.
It should be noted that, in the present invention, the area judgment threshold may be set to other percentage values for judgment besides being set to 50% of the area of the standard fill pattern, for example, to 30% or 65% of the area of the standard fill pattern. In addition, in addition to the above judgment basis, the present invention may also adopt other possible judgment basis to decide whether to merge the non-overlapping portion or remove the overlapping portion. For example, the non-overlapping portions are uniformly combined or the overlapping portions are uniformly removed.
After the filling fitting treatment, the side line of the curve graph is converted into a side line which accords with the Manhattan design rule, and the curve graph is also converted into a standard graph.
As an example, as shown in fig. 1, after the optical proximity correction verification in step 4), when the result of the optical proximity correction verification does not meet a preset target, the method further includes performing the iterative steps of optical proximity correction in step 2), setting sub-resolution auxiliary patterns and filling and fitting processing, the design rule check in step 3), and the optical proximity correction verification in step 4) again on the basis of the current optical proximity correction result until the result of the optical proximity correction verification in step 4) meets a preset target. The preset target means that the final design pattern output after the optical proximity correction not only accords with the Manchester design rule, but also the photoetching exposure development result of the photomask can be close to the original design pattern as much as possible. Optionally, the step of returning iteration may also be implemented by introducing a computer-aided means such as artificial intelligence or machine learning, and autonomously performing multiple iterations through a computer algorithm to obtain an expected optical proximity correction result.
As an example, the curve pattern optical proximity correction method provided in this embodiment may be used in an optical proximity correction process of a silicon optical device layout having more curve patterns. In other embodiments of the present invention, the curve pattern optical proximity correction method can also be used for optical proximity correction of other device layouts with more curve patterns.
Example two
The present embodiment provides a method for correcting a curved pattern optical proximity, which is different from the first embodiment at least in that: in step 2), the standard fill pattern used for the fill-and-fit process is a non-square pattern, for example, a non-square rectangle is used as the standard fill pattern used for the fill-and-fit process. For curve edges with different trends in the curve graph, rectangles with different length-width ratios can be adopted for filling and fitting processing, so that the diagonal trend of the rectangles is closer to the trend of the curve edges. This will make the standard graph edge line obtained after the fill-fit process closer to the original graph.
Other embodiments of this embodiment are the same as the first embodiment, and are not described herein again.
In summary, the present invention provides a method for correcting optical proximity of a curved pattern, which performs filling and fitting processing on the curved pattern to form a standard pattern after performing optical proximity correction on an imported original design pattern; the step of fill-fitting process comprises: arranging an array of standard filling patterns in a set area containing the side line of the curve pattern; using the standard fill pattern intersecting the curve pattern as a fill fit pattern having an overlapping portion overlapping the curve pattern and a non-overlapping portion not overlapping the curve pattern; forming the standard pattern by combining the curve patterns with the non-overlapping portion or removing the overlapping portion. The invention forms the standard graph by filling and fitting the curve graph of the silicon optical device, so that the graph of the domain accords with the standard of the conventional photomask, and the production cost of the photomask is reduced while the optical proximity correction result is close to the original graph.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (13)
1. The optical proximity correction method for the curve graph is characterized in that after the optical proximity correction is carried out on the imported original design graph, filling fitting processing is carried out on the curve graph to form a standard graph; the step of fill-fitting process comprises:
arranging an array of standard filling patterns in a set area containing the side line of the curve pattern;
using the standard fill pattern intersecting the curve pattern as a fill fit pattern having an overlapping portion overlapping the curve pattern and a non-overlapping portion not overlapping the curve pattern;
forming the standard pattern by combining the curve patterns with the non-overlapping portion or removing the overlapping portion.
2. The method of claim 1, wherein the standard fill pattern is a square, and the array of squares is arranged in horizontal and vertical directions.
3. The method of claim 2, wherein the side length of the square is in a range of 1 nm to 50 nm.
4. The method of claim 2, wherein the side length of the square is the minimum unit size of the photomask.
5. The method for correcting optical proximity of a curved line pattern according to claim 1, wherein the determining the curved line pattern to merge the non-overlapping portion or remove the overlapping portion comprises: setting an area judgment threshold; when the area of the overlapped part of the standard filling graph and the curve graph is larger than the area judgment threshold value, combining the non-overlapped part of the curve graph; and when the area of the overlapped part of the standard filling graph and the curve graph is smaller than the area judgment threshold value, removing the overlapped part from the curve graph.
6. The method of claim 5, wherein the area determination threshold is in a range of 20% to 80% of the area of the standard fill pattern.
7. The method for correcting optical proximity of a curved line pattern according to claim 5, wherein when the area of the overlapping portion of the standard fill pattern and the curved line pattern is equal to the area judgment threshold, the curved line pattern is caused to merge the non-overlapping portion.
8. The method for correcting optical proximity of a curved line pattern according to claim 5, wherein when an area of an overlapping portion of the standard fill pattern and the curved line pattern is equal to the area determination threshold, the curved line pattern is made to remove the overlapping portion.
9. The method for modifying optical proximity of a curved line pattern according to claim 1, further comprising the step of setting a sub-resolution auxiliary pattern before said fill-fit process is performed on said curved line pattern.
10. The method of claim 9, wherein the fill-fit process also includes processing the sub-resolution auxiliary pattern.
11. The method for optical proximity correction of curved line patterns according to claim 1, further comprising the steps of performing design rule checking, optical proximity correction verification and deriving a final design pattern after the fill-fit process is performed on the curved line pattern.
12. The method according to claim 11, further comprising repeating the iterative steps of optical proximity correction, filling and fitting, design rule checking, and optical proximity correction verification again based on the current optical proximity correction result until the result of optical proximity correction verification meets a predetermined target.
13. The method according to claim 1, wherein the method is used in an optical proximity correction process of a silicon optical device layout.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112782803A (en) * | 2021-01-08 | 2021-05-11 | 联合微电子中心有限责任公司 | Method for improving robustness of silicon-based optical waveguide process |
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| CN101916048A (en) * | 2005-07-15 | 2010-12-15 | 佳能株式会社 | Determining method of exposure parameter and exposure method |
| TW201308029A (en) * | 2011-04-26 | 2013-02-16 | D2S Inc | Method and system for forming non-manhattan patterns using variable shaped beam lithography |
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