CN111357081A - Dry cleaning apparatus and method for selectively removing polysilicon - Google Patents
Dry cleaning apparatus and method for selectively removing polysilicon Download PDFInfo
- Publication number
- CN111357081A CN111357081A CN201880074637.1A CN201880074637A CN111357081A CN 111357081 A CN111357081 A CN 111357081A CN 201880074637 A CN201880074637 A CN 201880074637A CN 111357081 A CN111357081 A CN 111357081A
- Authority
- CN
- China
- Prior art keywords
- containing gas
- protective layer
- polysilicon
- fluorine
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention relates to a dry cleaning apparatus and method for selectively removing polysilicon. The invention comprises the following steps: supplying a fluorine-containing gas in a plasma state and a hydrogen-containing gas in a non-plasma state to a substrate on which silicon oxide, silicon nitride, and polysilicon are formed, thereby changing the surfaces of the silicon oxide and the silicon nitride to ammonium hexafluorosilicate to form a protective layer; stopping the supply of the hydrogen-containing gas and continuously supplying the fluorine-containing gas in a plasma state, thereby passingSelectively removing the polysilicon by fluorine free radicals; finally, a protective layer removing step of removing the protective layer made of ammonium hexafluorosilicate by annealing. According to the present invention, by changing the surface of silicon nitride and silicon oxide formed on a substrate to ammonium hexafluorosilicate ((NH)4)2SiF6) The solid layer and the ammonium hexafluorosilicate solid layer are used as a protective layer, and polysilicon can be selectively etched.
Description
Technical Field
The present invention relates to a dry cleaning apparatus and method for selectively removing polysilicon. More particularly, the present invention relates to a method for changing the surface of silicon nitride and silicon oxide formed on a substrate to ammonium hexafluorosilicate ((NH)4)2SiF6) A dry cleaning apparatus and method for selectively etching polysilicon from a solid layer and using the solid layer of ammonium hexafluorosilicate as a protective layer.
Background
In accordance with high integration and high fineness of circuits of semiconductor devices, etching and cleaning techniques exhibiting high selectivity between heterogeneous patterns (heteropatterns) such as polysilicon, silicon oxide, or silicon nitride are required.
Meanwhile, techniques for etching polysilicon include wet etching and dry etching. Although the wet etching technique has excellent particle removal ability, there are problems in that cleaning ability is reduced due to surface tension on a high aspect ratio pattern and it is difficult to control selectivity of fine etching at an atomic level. In addition, the dry etching technique has a problem in that a damaged layer is formed due to ion bombardment on the wafer after etching, and thus an additional subsequent process for removing the damaged layer is required.
Recently, as an alternative technique to solve the above problems, formation of ammonium hexafluorosilicate (NH) by gas or radical reaction is widely used4)2SiF6) Dry cleaning (dry cleaning) technique of a solid layer and removing the solid layer thus formed by heating, and having a heterogeneous pattern selectively removed according to reaction conditionsWithout damaging the substrate.
However, ammonium hexafluorosilicate ((NH) is used4)2SiF6) Techniques for selectively etching polysilicon from solid layers are not known.
[ Prior Art document ]
[ patent documents ]
(patent document 1) korean unexamined patent application publication No. 10-2009-0083857 (publication date: 2009, 8 and 4 days, title of the invention: method for removing polysilicon and computer-readable storage medium)
Disclosure of Invention
Technical problem
The present invention relates to providing a dry cleaning apparatus and method for changing the surface of silicon nitride and silicon oxide formed on a substrate into ammonium hexafluorosilicate ((NH)4)2SiF6) And selectively etching the polysilicon using the solid layer of ammonium hexafluorosilicate as a protective layer.
Means for solving the problems
One aspect of the present invention provides a dry cleaning method for selectively removing polysilicon, comprising: a protective layer forming step of supplying a plasma state fluorine-containing gas and a non-plasma state hydrogen-containing gas, which react with silicon oxide and silicon nitride, to a substrate on a chuck located in a chamber, and the substrate having silicon oxide, silicon nitride, and polysilicon formed thereon, thereby changing the surfaces of the silicon oxide and silicon nitride into ammonium hexafluorosilicate ((NH)4)2SiF6) And forming a protective layer; a polysilicon removing step for stopping the supply of the hydrogen-containing gas and continuously supplying the fluorine-containing gas in a plasma state to selectively remove the polysilicon by the fluorine radicals; and a protective layer removing step for removing the protective layer made of ammonium hexafluorosilicate by annealing.
In a dry cleaning method for selectively removing polysilicon, a fluorine-containing gas and an RF power source are continuously supplied to form a fluorine-containing gas in a plasma state in a protective layer forming step and a polysilicon removing step, and a hydrogen-containing gas is supplied only in the protective layer forming step.
In the dry cleaning method for selectively removing polysilicon, the supply time of the hydrogen-containing gas is 1 to 10 seconds.
In the dry cleaning method for selectively removing polysilicon, the protective layer forming step, the polysilicon removing step and the protective layer removing step are sequentially performed in the same chamber by an in-situ cleaning method.
In the dry cleaning method for selectively removing polysilicon, in the protective layer removing step, only an inert gas is supplied while blocking plasma to remove the protective layer made of ammonium hexafluorosilicate by evaporation.
In the dry cleaning method for selectively removing polycrystalline silicon, the temperature of the chuck is controlled to 80 to 120 ℃, the heating temperature of the showerhead providing a path for supplying the fluorine-containing gas and the hydrogen-containing gas in a plasma state is 100 to 200 ℃, and the heating temperature of the inner sidewall of the chamber is 80 to 100 ℃.
In a dry cleaning process for selectively removing polysilicon, a hydrogen-containing gas comprises H2、NH3Or H2O。
Another aspect of the present invention provides a dry cleaning apparatus for selectively removing polycrystalline silicon, the dry cleaning apparatus comprising: a chuck included in the chamber and having a substrate on which silicon oxide, silicon nitride, and polysilicon are formed thereon; a chuck heater for heating the chuck; an RF electrode to which an RF power source for generating plasma is applied and which includes a first supply hole providing a path for supplying a fluorine-containing gas; and a showerhead spaced apart from the RF electrode to form a plasma generation region therebetween while being connected to a ground unit for an RF power source, and including a second supply hole providing a path for supplying a plasma-treated fluorine-containing gas to the substrate and a third supply hole providing a path for supplying a hydrogen-containing gas to the substrate and physically separated from the second supply hole. Here, in the protective layer forming step, a fluorine-containing gas in a plasma state that reacts with silicon oxide and silicon nitride is supplied to the substrate through the first supply hole and the second supply hole, and non-plasma is supplied to the substrate through the third supply holeHydrogen-containing gas in a state is supplied to the substrate, thereby changing the surfaces of the silicon oxide and the silicon nitride into ammonium hexafluorosilicate ((NH)4)2SiF6) And forming a protective layer, stopping supplying the hydrogen-containing gas and continuously supplying the fluorine-containing gas in a plasma state to selectively remove the polysilicon by fluorine radicals in the polysilicon removing step, and removing the protective layer made of ammonium hexafluorosilicate by annealing in the protective layer removing step.
In a dry cleaning apparatus for selectively removing polysilicon, a fluorine-containing gas and an RF power source are continuously supplied to form a fluorine-containing gas in a plasma state in a protective layer forming step and a polysilicon removing step, and a hydrogen-containing gas is supplied only in the protective layer forming step.
In the dry cleaning apparatus for selectively removing polysilicon, the supply time of the hydrogen-containing gas is 1 to 10 seconds.
In the dry cleaning apparatus for selectively removing polysilicon, the protective layer forming step, the polysilicon removing step, and the protective layer removing step are sequentially performed in the same chamber by an in-situ cleaning (in-situ cleaning) method.
In the dry cleaning apparatus for selectively removing polysilicon, in the protective layer removing step, only an inert gas is supplied while blocking plasma so as to remove the protective layer made of ammonium hexafluorosilicate by evaporation.
In the dry cleaning apparatus for selectively removing polycrystalline silicon, the temperature of the chuck is controlled to be 80 to 120 ℃, the heating temperature of the shower head is 100 to 200 ℃, and the heating temperature of the inner sidewall of the chamber is 80 to 100 ℃.
In a dry cleaning apparatus for selectively removing polysilicon, the hydrogen-containing gas is H2、NH3Or H2O。
Advantageous effects of the invention
According to the present invention, there are provided a dry cleaning apparatus and a dry cleaning method for changing the surface of silicon nitride and silicon oxide formed on a substrate into ammonium hexafluorosilicate ((NH)4)2SiF6) Solid layer selectively etched using ammonium hexafluorosilicate as a protective layerAnd etching the polysilicon.
Drawings
Fig. 1 illustrates a dry cleaning method for selectively removing polysilicon according to an exemplary embodiment of the present invention.
Fig. 2 illustrates an RF power supply and gas supply timing according to an exemplary embodiment of the present invention.
Fig. 3 illustrates a reaction mechanism for dry cleaning according to an exemplary embodiment of the present invention.
Fig. 4 illustrates a dry cleaning apparatus for selectively removing polysilicon according to an exemplary embodiment of the present invention.
Detailed Description
A specific structural or functional description of the embodiments according to the inventive concept disclosed in the specification is illustrated only for the purpose of describing the embodiments according to the inventive concept. Embodiments according to the concept of the present invention may be implemented in various forms, and the present invention is not limited to the embodiments described in the specification.
The invention may be modified and practiced in various forms and therefore only certain embodiments will be described in detail. However, the invention is not limited to the specific disclosure, and it is to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
The terms "first" and "second" may be used to describe various components, but these components should not be limited by these terms. These terms are only used to distinguish one component from another component. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention.
When a first component is referred to as being "connected to" or "in contact with" a second component, it will be understood that the first component can be directly connected to or in contact with the second component, or a third component can be interposed therebetween. On the other hand, when a first component is referred to as being "directly connected" to or "in contact with" a second component, it will be understood that there are no other components between them. Other expressions describing the relationship between components, i.e. "between … …", "directly between … …", "adjacent to … …" or "directly adjacent to … …" should be construed as above.
The terminology used in the description is for the purpose of describing particular examples only and is not intended to be limiting of the invention. Unless the context clearly dictates otherwise, singular expressions include plural expressions. In the specification, it should be understood that the term "comprises/comprising" is intended to indicate the presence of the features, numbers, steps, actions, components or groups thereof described in the specification, but does not exclude the possibility of one or more other features, numbers, steps, actions, components, parts or groups thereof being present or added.
Unless defined otherwise, all terms including technical and scientific terms have the same meaning as commonly understood by one of ordinary skill in the art. General terms (e.g., terms defined in dictionaries) should be interpreted in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 illustrates a dry cleaning method for selectively removing polysilicon according to an exemplary embodiment of the present invention. Fig. 2 illustrates an RF power supply and gas supply timing according to an exemplary embodiment of the present invention. Fig. 3 illustrates a reaction mechanism for dry cleaning according to an exemplary embodiment of the present invention. Fig. 4 illustrates a dry cleaning apparatus for selectively removing polysilicon according to an exemplary embodiment of the present invention.
Referring to fig. 1 to 4, the dry cleaning method for selectively removing polysilicon according to an exemplary embodiment of the present invention includes a protective layer forming step (S100), a polysilicon removing step (S200), and a protective layer removing step (S300).
Before describing a specific configuration of the dry cleaning method for selectively removing polycrystalline silicon according to an exemplary embodiment of the present invention, a fluorine-containing gas, a hydrogen-containing gas, and an inert gas are defined. For example, the fluorine-containing gas may be NF3However, the present invention is not limited thereto. For example, the hydrogen-containing gas mayTo comprise H2、NH3Or H2O, but the present invention is not limited thereto. For example, the inert gas may include N2Ar or He, but the present invention is not limited thereto.
In addition, the substrate 40 may have a silicon material, and a heterogeneous pattern composed of one or more of silicon oxide, silicon nitride, and polysilicon must be formed on the substrate 40.
In the protective layer forming step (S100), a plasma state fluorine-containing gas and a non-plasma state hydrogen-containing gas, which react with silicon oxide and silicon nitride, are supplied to the substrate 40 disposed on the chuck 20 in the chamber 10, and silicon oxide, silicon nitride, and polysilicon are formed on the substrate 40, thereby changing the surfaces of the silicon oxide and silicon nitride into ammonium hexafluorosilicate ((NH)4)2SiF6) And forming a protective layer.
An exemplary configuration of the protective layer forming step (S100) will be described below.
First, the substrate 40 is disposed on the chuck 20 in the chamber 10. For example, the substrate 40 may be transferred to and disposed on the chuck 20 in the chamber 10 by a transfer device not shown. In addition, the substrate 40 may be heated, and for this, the chuck 20 on which the substrate 40 is disposed may be controlled to have a temperature of 80 to 120 ℃ using the chuck heater 30. Since the substrate 40 is placed in contact with the chuck 20, the substrate is heated to a temperature corresponding to the heating temperature of the chuck 20.
Subsequently, a fluorine-containing gas is injected into the plasma generation region. For example, a fluorine-containing gas may be injected into the plasma generation region from the upper portion of the chamber 10, and for this, a first supply hole 62 may be included in the RF electrode 60 provided at the upper portion of the chamber 10 to provide a path for injecting the fluorine-containing gas.
Subsequently, the RF power source 50 is applied to generate plasma in the plasma generation region. For example, in the chamber 10, the plasma generating region may be interposed between an RF electrode 60 disposed at an upper portion and a showerhead 70 disposed at a lower portion, which will be described below, a positive electrode of an RF power source may be electrically connected to the RF electrode 60, and a negative electrode thereof may be electrically connected to the showerhead 70. When the RF power source 50 is applied, the fluorine-containing gas injected into the RF electrode 60 and the showerhead 70 is radicalized by a plasma reaction and then supplied to the substrate 40 through the second supply hole 72 included in the showerhead 70.
Subsequently, a hydrogen-containing gas is directly injected into the showerhead 70 without plasma treatment and supplied to the substrate 40. For example, in the showerhead 70 disposed below the plasma generation region, not only the second supply hole 72 provides a path through which the radical-converted fluorine-containing gas passes, but also a third supply hole 74 providing a path through which the hydrogen-containing gas is injected may be included, and the second supply hole 72 and the third supply hole 74 may be configured to have physically spaced paths.
Thereafter, the plasma-treated fluorine-containing gas and the hydrogen-containing gas that has not been plasma-treated react only with silicon oxide and silicon nitride among silicon oxide, silicon nitride, and polysilicon formed on the substrate 40, thereby generating ammonium hexafluorosilicate as a reaction product. For example, ammonium hexafluorosilicate may be generated as a solid layer, and silicon oxide and silicon nitride present on the surface of the substrate 40 may be replaced by a solid layer of ammonium hexafluorosilicate.
The process of converting silica to ammonium hexafluorosilicate is represented by the following chemical equation:
2NH4F(g)+4HF(g)+SiO2＝(NH4)2SiF6(g)+2H2O
for example, a fluorine-containing gas and an RF power source may be continuously supplied in the protective layer forming step (S100) and the polysilicon removing step (S200) to form the fluorine-containing gas in a plasma state, and a hydrogen-containing gas may be supplied only in the protective layer forming step (S100) in a range of 1 to 10 seconds. According to this configuration, (NH) serving as a protective layer for protecting silicon oxide and silicon nitride can be made to selectively etch polysilicon4)2SiF6The thickness of the solid layer is minimized, and preferably, the supply time of silicon (T1) is set to 6 seconds or less.
In the polysilicon removal step (S200), the supply of the hydrogen-containing gas is stopped, and the fluorine-containing gas in a plasma state is continuously supplied, thereby selectively removing the polysilicon by the fluorine radicals.
In the protective layer removing step (S300), the protective layer made of ammonium hexafluorosilicate is removed by annealing. In this process, the inert gas may be supplied, and may be continuously supplied throughout the entire process time, i.e., in the protective layer forming step (S100), the polysilicon removing step (S200), and the protective layer removing step (S300).
The process of removing ammonium hexafluorosilicate by annealing evaporation is represented by the following formula:
(NH4)2SiF6(g)＝SiF4(g)+2NH3(g)+2HF(g)
for example, the protective layer forming step (S100), the polysilicon removing step (S200), and the protective layer removing step (S300) may be sequentially performed in the same chamber by an in-situ cleaning method.
For example, in the protective layer removing step (S300), the protective layer made of ammonium hexafluorosilicate may be evaporated and removed by supplying only an inert gas while blocking plasma.
For example, the temperature of the chuck 20 is controlled to 80 to 120 ℃, the heating temperature of the showerhead providing a path for supplying the fluorine-containing gas and the hydrogen-containing gas in the plasma state is 100 to 200 ℃, and the heating temperature of the inner sidewall of the chamber is 80 to 100 ℃.
As shown in fig. 4, the dry cleaning apparatus for selectively removing polycrystalline silicon according to one embodiment of the present invention includes a chamber 10, a chuck 20, a chuck heater 30, an RF electrode 60, and a shower head 70. In fig. 4, other components may be included in the dry cleaning apparatus, but it should be noted that components having low relevance to the features of the present invention are omitted in fig. 4.
The above description for describing the method can also be applied to the description apparatus, and repeated description is omitted if possible.
The chamber 10 provides a space in which an entire process for selectively removing polysilicon among silicon oxide, silicon nitride, and polysilicon formed on the substrate 40 is performed.
The chuck 20 is an assembly that is included in the chamber 10 and on which a substrate 40 to be processed is disposed.
The chuck heater 30 is a component for heating the chuck 20.
An RF electrode 60 is disposed in the upper portion of the chamber 10, applies an RF power source 50 for generating plasma, and includes therein a first supply hole 62 as a path of a fluorine-containing gas or an inert gas.
The showerhead 70 is spaced apart from the RF electrode 60 so as to create a plasma generation region therebetween while being electrically connected to a ground unit for the RF power supply 50, and includes a second supply hole 72 and a third supply hole 74 physically separated from the second supply hole 72. Since the showerhead 70 is grounded by being connected to a grounding unit for the RF power supply 50, only reactive radical components can pass through the showerhead 70 while suppressing ion components implanted into the substrate 40 as much as possible. The second supply hole 72 provides a path for supplying the fluorine-containing gas, which is radical-converted by the plasma treatment in the plasma generation region, to the substrate 40, and the third supply hole 74, which is physically separated from the second supply hole 72, provides a path for supplying the hydrogen-containing gas, which is not treated by the plasma, to the substrate 40. The second supply hole 72 may serve as a path for supplying an inert gas.
According to such a configuration, the substrate 40 is heated corresponding to the heating temperature of the chuck 20 heated by the chuck heater 30.
In addition, the RF power source 50 supplies the RF power to the first supply hole 62 containing at least NF3Is plasma-treated and supplied to the substrate 40 through the second supply hole 72, and contains at least NH without being plasma-treated3Is supplied to the substrate 40 through the third supply hole 74 so that the surfaces of the silicon oxide and the silicon nitride become ammonium hexafluorosilicate ((NH)4)2SiF6) As a protective layer in the process of selectively etching polysilicon.
Here, according to the dry cleaning apparatus for selectively removing polysilicon according to the exemplary embodiment of the present invention, in the protective layer forming step, a fluorine-containing gas in a plasma state that reacts with silicon oxide and silicon nitride may be supplied to the substrate 40 through the first supply hole 62 and the second supply hole 72, and a non-plasma gas may be supplied through the third supply hole 74A hydrogen-containing gas in a state is supplied to the substrate 40 to change the surface of the silicon oxide and the silicon nitride into ammonium hexafluorosilicate ((NH)4)2SiF6) Thereby forming a protective layer; in the polysilicon removal step, the supply of the hydrogen-containing gas may be stopped, and the fluorine-containing gas in a plasma state may be continuously supplied to selectively remove the polysilicon by the fluorine radicals. In the protective layer removing step, the protective layer made of ammonium hexafluorosilicate may be removed by annealing evaporation.
For example, the fluorine-containing gas and the RF power source 50 may be continuously supplied in the protective layer forming step and the polysilicon removing step to form the fluorine-containing gas in a plasma state, and the hydrogen-containing gas may be supplied only in the protective layer forming step in the range of 1 to 10 seconds. According to this configuration, in the step of selectively etching polysilicon, (NH) serving as a protective layer to protect silicon oxide and silicon nitride can be made4)2SiF6The thickness of the solid layer is minimal and preferably, the supply time of the hydrogen-containing gas (T1) may be 6 seconds or less.
The process of converting silica to ammonium hexafluorosilicate is represented by the following chemical equation:
2NH4F(g)+4HF(g)+SiO2＝(NH4)2SiF6(g)+2H2O
the process of removing ammonium hexafluorosilicate by annealing evaporation is represented by the following chemical equation:
(NH4)2SiF6(g)＝SiF4(g)+2NH3(g)+2HF(g)
for example, the protective layer forming step, the polysilicon removing step, and the protective layer removing step may be performed in succession in the same chamber by an in-situ cleaning method.
For example, the temperature of the chuck 20 is controlled to 80 to 120 ℃, the heating temperature of the showerhead providing a path for supplying the fluorine-containing gas and the hydrogen-containing gas in the plasma state is 100 to 200 ℃, and the heating temperature of the inner sidewall of the chamber is 80 to 100 ℃.
As described above in detail, according to the present invention, silicon nitride and oxide formed on a substrate can be oxidizedSurface modification of silicon to ammonium hexafluorosilicate ((NH)4)2SiF6) The solid layer, and the solid layer of ammonium hexafluorosilicate may be used as a protective layer to selectively etch polysilicon.
[ description of reference numerals ]
10: chamber
20: chuck with a locking mechanism
30: chuck heater
40: substrate
50: radio frequency power supply
60: radio frequency electrode
62: a first supply hole
70: spray head
72: second supply hole
74: third supply hole
S100: protective layer formation step
S200: polysilicon removal step
S300: protective layer removing step
Claims (14)
1. A dry cleaning process for selectively removing polysilicon, comprising:
a protective layer forming step of supplying a fluorine-containing gas in a plasma state and a hydrogen-containing gas in a non-plasma state, which react with silicon oxide and silicon nitride, to a substrate having silicon oxide, silicon nitride and polysilicon formed thereon on a chuck disposed in a chamber, thereby changing the surfaces of the silicon oxide and silicon nitride into ammonium hexafluorosilicate ((NH)4)2SiF6) And forming a protective layer;
a polysilicon removing step for stopping the supply of the hydrogen-containing gas and continuously supplying the fluorine-containing gas in a plasma state, thereby selectively removing the polysilicon by the fluorine radicals; and
a protective layer removing step for removing the protective layer made of ammonium hexafluorosilicate by annealing.
2. The method according to claim 1, wherein a fluorine-containing gas and an RF power source are continuously supplied to form a fluorine-containing gas in a plasma state in the protective layer forming step and the polysilicon removing step, and
the hydrogen-containing gas is supplied only in the protective layer forming step.
3. The method according to claim 2, wherein the supply time of the hydrogen-containing gas is 1 to 10 seconds.
4. The method of claim 1, wherein the protective layer forming step, the polysilicon removing step and the protective layer removing step are performed in succession in the same chamber by an in-situ cleaning method.
5. The method according to claim 1, wherein, in the protective layer removing step,
only the inert gas is supplied while the plasma is blocked, thereby removing the protective layer made of ammonium hexafluorosilicate by evaporation.
6. The method of claim 1, wherein the temperature of the chuck is controlled to 80 to 120 ℃, the heating temperature of a showerhead providing a path for supplying the fluorine-containing gas and the hydrogen-containing gas in the plasma state is 100 to 200 ℃, and the heating temperature of the inner sidewall of the chamber is 80 to 100 ℃.
7. The method of claim 1, wherein the hydrogen-containing gas comprises H2、NH3Or H2O。
8. A dry cleaning apparatus for selectively removing polysilicon, comprising:
a chuck included in the chamber and having a substrate on which silicon oxide, silicon nitride, and polysilicon are formed thereon;
a chuck heater for heating the chuck;
an RF electrode to which an RF power source for generating plasma is applied and which includes a first supply hole providing a path for supplying a fluorine-containing gas; and
a showerhead spaced apart from the RF electrode to form a plasma generation region therebetween while being connected to a ground unit for an RF power source, and including a second supply hole providing a path for supplying a plasma-treated fluorine-containing gas to the substrate, and a third supply hole providing a path for supplying a hydrogen-containing gas to the substrate and physically separated from the second supply hole;
wherein, in the protective layer forming step, a fluorine-containing gas in a plasma state that reacts with the silicon oxide and the silicon nitride is supplied to the substrate through the first supply hole and the second supply hole, and a hydrogen-containing gas in a non-plasma state is supplied to the substrate through the third supply hole, thereby changing the surfaces of the silicon oxide and the silicon nitride into ammonium hexafluorosilicate ((NH)4)2SiF6) And a protective layer is formed on the substrate,
in the polysilicon removal step, the supply of the hydrogen-containing gas is stopped, and the fluorine-containing gas in a plasma state is continuously supplied, thereby selectively removing the polysilicon by the fluorine radicals, and
in the protective layer removing step, the protective layer made of ammonium hexafluorosilicate is removed by annealing.
9. The apparatus according to claim 8, wherein in the protective layer forming step and the polysilicon removing step, a fluorine-containing gas and an RF power source are continuously supplied to form the fluorine-containing gas in a plasma state, and
the hydrogen-containing gas is supplied only in the protective layer forming step.
10. The apparatus according to claim 9, wherein the supply time of the hydrogen-containing gas is 1 to 10 seconds.
11. The apparatus of claim 8, wherein the protective layer forming step, the polysilicon removing step and the protective layer removing step are performed in succession in the same chamber by an in-situ cleaning method.
12. The apparatus according to claim 8, wherein, in the protective layer removing step,
only the inert gas is supplied while the plasma is blocked, thereby removing the protective layer made of ammonium hexafluorosilicate by evaporation.
13. The apparatus of claim 8, wherein the temperature of the chuck is controlled to be 80 to 120 ℃, the heating temperature of the showerhead is 100 to 200 ℃, and the heating temperature of the inner sidewall of the chamber is 80 to 100 ℃.
14. The apparatus of claim 8, wherein the hydrogen-containing gas is H2、NH3Or H2O。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2017-0163125 | 2017-11-30 | ||
| KR1020170163125A KR102018075B1 (en) | 2017-11-30 | 2017-11-30 | Dry clean apparatus and method for removing polysilicon seletively |
| PCT/KR2018/011759 WO2019107729A1 (en) | 2017-11-30 | 2018-10-05 | Dry cleaning apparatus and method for selectively removing polysilicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111357081A true CN111357081A (en) | 2020-06-30 |
Family
ID=66664495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880074637.1A Pending CN111357081A (en) | 2017-11-30 | 2018-10-05 | Dry cleaning apparatus and method for selectively removing polysilicon |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR102018075B1 (en) |
| CN (1) | CN111357081A (en) |
| WO (1) | WO2019107729A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022166087A1 (en) * | 2021-02-03 | 2022-08-11 | 长鑫存储技术有限公司 | Cleaning process and semiconductor process method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7221187B2 (en) * | 2019-09-30 | 2023-02-13 | 東京エレクトロン株式会社 | Film forming method and film forming apparatus |
| KR102592414B1 (en) | 2020-11-23 | 2023-10-20 | 세메스 주식회사 | An unit for controlling an electrode and an apparatus for treating a substrate with the unit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102918635A (en) * | 2010-05-27 | 2013-02-06 | 应用材料公司 | Selective etch for silicon films |
| US20150064896A1 (en) * | 2013-08-29 | 2015-03-05 | United Microelectronics Corp. | Method of fabricating semiconductor device |
| CN105244270A (en) * | 2014-07-01 | 2016-01-13 | 东京毅力科创株式会社 | Etching method, etching apparatus |
| US20170069463A1 (en) * | 2015-09-08 | 2017-03-09 | Applied Materials, Inc. | Seasoning process for establishing a stable process and extending chamber uptime for semiconductor chip processing |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5025508B2 (en) | 2008-01-30 | 2012-09-12 | 東京エレクトロン株式会社 | Method for removing polysilicon film and storage medium |
| US20140273525A1 (en) * | 2013-03-13 | 2014-09-18 | Intermolecular, Inc. | Atomic Layer Deposition of Reduced-Leakage Post-Transition Metal Oxide Films |
| US9299557B2 (en) * | 2014-03-19 | 2016-03-29 | Asm Ip Holding B.V. | Plasma pre-clean module and process |
| TWI727992B (en) * | 2015-11-11 | 2021-05-21 | 美商諾發系統有限公司 | Ultrahigh selective polysilicon etch with high throughput |
-
2017
- 2017-11-30 KR KR1020170163125A patent/KR102018075B1/en active IP Right Grant
-
2018
- 2018-10-05 CN CN201880074637.1A patent/CN111357081A/en active Pending
- 2018-10-05 WO PCT/KR2018/011759 patent/WO2019107729A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102918635A (en) * | 2010-05-27 | 2013-02-06 | 应用材料公司 | Selective etch for silicon films |
| US20150064896A1 (en) * | 2013-08-29 | 2015-03-05 | United Microelectronics Corp. | Method of fabricating semiconductor device |
| CN105244270A (en) * | 2014-07-01 | 2016-01-13 | 东京毅力科创株式会社 | Etching method, etching apparatus |
| US20170069463A1 (en) * | 2015-09-08 | 2017-03-09 | Applied Materials, Inc. | Seasoning process for establishing a stable process and extending chamber uptime for semiconductor chip processing |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022166087A1 (en) * | 2021-02-03 | 2022-08-11 | 长鑫存储技术有限公司 | Cleaning process and semiconductor process method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102018075B1 (en) | 2019-09-04 |
| WO2019107729A1 (en) | 2019-06-06 |
| KR20190063941A (en) | 2019-06-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101744625B1 (en) | Etching method | |
| KR102023784B1 (en) | Method of etching silicon nitride films | |
| TWI781309B (en) | Workpiece processing method | |
| CN107017162B (en) | Ultra-high selectivity polysilicon etch with high throughput | |
| US10727075B2 (en) | Uniform EUV photoresist patterning utilizing pulsed plasma process | |
| JP7366072B2 (en) | In-situ high power injection to reduce stress in thin films | |
| TW201405656A (en) | Removal of polysilicon and native oxide with high selectivity | |
| WO2006026422A2 (en) | Method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate | |
| CN111095484B (en) | In situ dry cleaning method and apparatus | |
| CN111357081A (en) | Dry cleaning apparatus and method for selectively removing polysilicon | |
| JP2017152531A (en) | Substrate processing method | |
| JP2020534707A (en) | Substrate processing method and equipment | |
| US9216609B2 (en) | Radical etching apparatus and method | |
| KR100595090B1 (en) | Improved techniques for etching with a photoresist mask | |
| KR101226274B1 (en) | Mehtod of fabricating Carbon hard mask and method of fabricating patterns in semiconductor device | |
| KR102044763B1 (en) | Dry clean method for removing silicon oxide with high selectivity | |
| KR102476308B1 (en) | Systems and methods for forming voids | |
| CN111433901B (en) | Dry cleaning apparatus and method for removing silicon dioxide with high selectivity | |
| US10515796B2 (en) | Dry etch rate reduction of silicon nitride films | |
| CN111492460B (en) | Plasma apparatus for dry cleaning semiconductor substrate | |
| KR102140722B1 (en) | Dry clean apparatus and method using atmospheric plasma and steam | |
| KR20200056304A (en) | Device manufacturing method | |
| TWI774754B (en) | Self-aligned contact and gate process flow | |
| CN113811401A (en) | Dry cleaning method using plasma and steam | |
| CN113811400A (en) | Dry cleaning apparatus using plasma and steam |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220601 Address after: Gyeonggi Do, South Korea Applicant after: Aisi Co.,Ltd. Address before: Gyeonggi Do, South Korea Applicant before: MUJIN ELECTRONICS Co.,Ltd. |
|
| TA01 | Transfer of patent application right |