CN111352007A - Comprehensive evaluation method for defects of basin-type insulator of ultra/extra-high voltage GIS equipment - Google Patents

Comprehensive evaluation method for defects of basin-type insulator of ultra/extra-high voltage GIS equipment Download PDF

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CN111352007A
CN111352007A CN202010251764.3A CN202010251764A CN111352007A CN 111352007 A CN111352007 A CN 111352007A CN 202010251764 A CN202010251764 A CN 202010251764A CN 111352007 A CN111352007 A CN 111352007A
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defect
basin
defects
type insulator
gis equipment
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CN111352007B (en
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杨为
朱太云
田宇
柯艳国
朱胜龙
张国宝
赵恒阳
蔡梦怡
陈忠
李坚林
罗沙
甄超
谢佳
宋东波
赵常威
杨海涛
秦金飞
张晨晨
钱宇骋
杨熙
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Electric Power Research Institute of State Grid Anhui Electric Power Co Ltd
Hefei University of Technology
State Grid Anhui Electric Power Co Ltd
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Electric Power Research Institute of State Grid Anhui Electric Power Co Ltd
Hefei University of Technology
State Grid Anhui Electric Power Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G01R31/1245Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of line insulators or spacers, e.g. ceramic overhead line cap insulators; of insulators in HV bushings

Abstract

The invention discloses a comprehensive evaluation method for defects of basin-type insulators of ultra/extra-high voltage GIS equipment, which comprises the steps of determining the condition of main latent defects existing on a typical basin-type insulator of the GIS equipment; establishing an electric field finite element analysis program, and measuring electric field distortion coefficients under various defects of the basin-type insulator through simulation and test; calculating the electric field intensity of different radial distances under various defects of the basin-type insulator; and classifying defects according to the flashover type, constructing a comprehensive evaluation function of latent defects, and evaluating the defect grade of the basin-type insulator according to the evaluation function value. The method and the device realize quantitative analysis of the latent defects of the basin-type insulator on the premise of not disassembling the GIS equipment, reduce or avoid various accidents caused by the latent defects of the basin-type insulator to a great extent, ensure safe and reliable operation of the GIS equipment and even stable operation of the whole power system, and have wide practicability and economical efficiency.

Description

Comprehensive evaluation method for defects of basin-type insulator of ultra/extra-high voltage GIS equipment
Technical Field
The invention belongs to the technical field of online detection and comprehensive evaluation of latent defects of an insulating part of an extra/extra-high voltage GIS (gas insulated switchgear), and particularly relates to a comprehensive evaluation method of latent defects of a typical basin-type insulator of the extra/extra-high voltage GIS.
Background
In recent years, with the acceleration of social industrialization progress, the living standard of people is continuously improved, and in order to meet the great increase of power consumption requirements, new requirements are continuously provided for the voltage grade of the power transmission network in China, however, a Gas Insulated Switchgear (GIS) has many advantages of compact structure, good insulating property, small maintenance amount, high power supply reliability and the like, is widely applied to an ultra/extra-high voltage power system, and plays a vital role in the power system.
The basin-type insulator is used as a core component in the GIS, has important functions of isolating a conductor inside the basin-type insulator from a shell of the gas insulated combination switch so as not to contact the conductor, isolating and sealing gas in different closed spaces, supporting the shell of the gas insulated combination switch so as to achieve supporting and reinforcing and the like, and the structural design of the basin-type insulator needs to consider the performances of the electrical and mechanical aspects, thereby being related to the safety of the whole set of equipment. Therefore, the insulation performance of the basin-type insulator determines the insulation performance and the operation reliability of the GIS equipment, and the safe and stable operation of a power grid is directly related. However, the basin insulator is the weakest insulation link in the GIS, and the insulation performance of the basin insulator depends on the surface and the inside of the basin body and whether the surface of the metal electrode has defects or not to a great extent. In the production, test, installation and operation processes of the basin-type insulator, latent defects such as gas gaps, surface bulges or depressions, conductive particles and the like can be introduced due to improper processes, overhigh test loads, mechanical vibration, mechanical abrasion, misoperation and the like, and the defects can cause sudden changes of electric fields nearby the defects, so that GIS equipment breaks down and stable operation of a power system is influenced. According to a large amount of statistical data, the fault caused by the defect of the basin-type insulator accounts for 37% of the total fault of the GIS, and the GIS equipment which is already put into operation for more than 20 years is more harmful. The defects of the basin-type insulator are difficult to discover in advance due to the special material and the special mounting position of the basin-type insulator, and how to efficiently and accurately perform periodic detection on the basin-type insulator and make comprehensive assessment on latent defects on the premise of not disassembling GIS equipment is a current research hotspot and difficulty point, so that the basin-type insulator comprehensive assessment method has great practical significance.
At present, researches on latent defect detection and analysis of typical basin-type insulators of ultra/extra-high voltage GIS equipment at home and abroad mainly focus on qualitative analysis, and defects are not quantified, for example, the basin-type insulator defect detection and positioning based on ultrasonic guided waves in 2019 literature, the basin-type insulator defect detection technology based on ultrasonic guided waves in 2017 literature, which is described in the particle defect diagnosis on 500kV GIS basin-type insulators in 2017, the basin-type insulator defect detection technology based on ultrasonic guided waves in 2017 high-voltage electrical appliances and other literatures, for example, the basin-type insulator defect identification method research based on X-rays in 2017 literature, the Shuichi paper in 2018, the basin-type insulator defect detection technology research based on X-rays in 2019, the power equipment management and other literatures based on 2017 The defect detection technology of the basin-type insulator by X-rays and the research on the defect detection analysis of the basin-type insulator in other documents do not relate to the quantitative analysis of the defects. Because qualitative analysis has certain subjectivity and fuzziness, the latent defect level of a typical basin-type insulator of the GIS cannot be objectively, accurately and comprehensively reflected, so that the GIS cannot be subjected to timely and reasonable arrangement and maintenance and appropriate treatment, the GIS fails and stable operation of a power system is influenced. Therefore, in order to arrange a reasonable maintenance plan in time before the GIS equipment fails, the primary task of ensuring the safe and reliable operation of the GIS equipment is to objectively and accurately comprehensively evaluate the latent defect grade of the typical basin-type insulator of the GIS equipment, namely to quantitatively analyze the defect.
Disclosure of Invention
The invention aims to provide a comprehensive evaluation method for the latent defect of a typical basin-type insulator of an ultra/extra-high voltage GIS (gas insulated switchgear), so as to achieve objective and accurate comprehensive evaluation on the latent defect grade of the basin-type insulator, overcome the defects of subjectivity, fuzziness and the like of the prior art which only carries out qualitative analysis on the latent defect of the basin-type insulator, reduce or avoid various accidents caused by the latent defect of the basin-type insulator, and ensure the safe and reliable operation of the GIS and even the stable operation of the whole power system.
In order to achieve the aim, the invention provides a comprehensive evaluation method for defects of a basin-type insulator of extra/extra-high voltage GIS equipment, which comprises the following steps:
step 1, carrying out nondestructive inspection on the typical basin-type insulator of the ultra/extra-high voltage GIS equipment by using an X-ray imaging technology, carrying out image filtering pretreatment on an obtained X-ray image, and finally carrying out classification and identification on defects of the typical basin-type insulator of the ultra/extra-high voltage GIS equipment by using an improved convolutional neural network so as to obtain 7 main latent defects existing on the basin-type insulator of the GIS equipment, wherein the 7 main latent defects are sequentially: interface air gap defect, surface bulge defect of the pot body, surface depression defect of the pot body, attached conductive particle defect, suspended conductive particle defect, bubble defect inside the pot body and penetrating crack defect of the pot body;
step 2, establishing an electric field finite element analysis program of 7 main latent defects on the typical basin-type insulator of the GIS equipment, and obtaining an electric field distortion coefficient k of the typical basin-type insulator of the GIS equipment under the 7 main latent defects through simulation calculation and test measurementiWherein i is the number of 7 main latent defects, i is 1,2,3,4,5,6,7, which respectively represents the defect of interface air gap, the defect of convex surface of the pot body, the defect of concave surface of the pot body, the defect of attached conductive particles, the defect of suspended conductive particles, and the defect of bubbles in the inner part of the pot bodyAnd pot body penetrating crack defects;
step 3, respectively calculating the electric field intensity E of 7 main latent defects of the typical basin-type insulator of the GIS equipment under the ultrahigh voltageiaElectric field intensity E of 7 main latent defects of typical basin-type insulator of GIS equipment under ultrahigh voltageib1,2,3,4,5,6,7, and the calculation formula is:
Eia=ki×fia(x)
Eib=ki×fib(x)
wherein:
x is the radial distance of a typical basin-type insulator of the GIS equipment, and the unit is mm;
fia(x) Is the electric field intensity f of a typical basin-type insulator of the GIS equipment under the ultrahigh voltage at different radial distances xib(x) The electric field intensity of a typical basin-type insulator of GIS equipment under the ultrahigh pressure is in unit of kV/mm under different radial distances x;
and 4, classifying the 7 main latent defects in the step 2 into the following three categories according to different flashover types caused by the 7 main latent defects of the basin-type insulator:
classifying interface air gap defects, attached conductive particle defects, suspended conductive particle defects, and basin penetration crack defects as SF6Gas flashover and its flashover value is recorded as SF6Gas flashover value E1,E1=7.5×(10P)0.75Wherein, P is air pressure with unit of MPa;
classifying the convex defect on the surface of the pot body and the concave defect on the surface of the pot body as SF6The gas flashover along the surface and the flashover value is recorded as SF6Gas surface flashover value E2,E2=6.4×(10P)0.66
Classifying bubble defects inside the basin body as SF6Air flashover and its flashover value is recorded as SF6Air flashover value E3,E3=11.3kV/mm;
Step 5, constructing a comprehensive evaluation function W of the latent defects of the typical basin-type insulator of the ultrahigh-voltage GIS equipmentaTypical basin type of extra-high voltage GIS equipmentComprehensive evaluation function W of latent defects of insulatorbThe functional expression is as follows:
Wa=n1W1a+n2W2a+n3W3a+n4W4a+n5W5a+n6W6a+n7W7a
Wb=n1W1b+n2W2b+n3W3b+n4W4b+n5W5b+n6W6b+n7W7b
in the formula:
n1weighting factor, n, corresponding to interface air gap defects2Weighting coefficient, n, corresponding to the bulge defect on the surface of the pot body3Weighting coefficient, n, corresponding to the pot surface indentation defect4Weighting factor, n, corresponding to defect of adhered conductive particles5Weighting factor, n, corresponding to suspended conductive particle defects6Weighting coefficient, n, corresponding to bubble defect inside the basin body7Weighting coefficients corresponding to the pot body penetrating crack defects;
W1ais the flashover coefficient, W, of a typical basin-type insulator of ultrahigh-voltage GIS equipment under the defect of an interface air gap1a=E1a/E1,W1bIs the flashover coefficient, W, of a typical basin-type insulator of extra-high voltage GIS equipment under the defect of an interface air gap1b=E1b/E1
W2aIs the flashover coefficient of a typical basin-type insulator of the ultrahigh-voltage GIS equipment under the defect of the convex surface of the basin body, W2a=E2a/E2,W2bIs the flashover coefficient, W, of a typical basin-type insulator of extra-high voltage GIS equipment under the defect of raised surface of a basin body2b=E2b/E2
W3aIs the flashover coefficient of a typical basin-type insulator of the ultrahigh-voltage GIS equipment under the surface depression defect of a basin body, W3a=E3a/E2,W3bIs a typical basin-type insulator of extra-high voltage GIS equipment under the surface depression defect of a basin bodyFlashover coefficient, W3b=E3b/E2
W4aThe flashover coefficient, W, of a typical basin-type insulator of ultrahigh-voltage GIS equipment under the defect of conductive particles4a=E4a/E1,W4bThe flashover coefficient W of a typical basin-type insulator of extra-high voltage GIS equipment under the defect of conductive particles4b=E4b/E1
W5aIs the flashover coefficient, W, of a typical basin-type insulator of ultrahigh-voltage GIS equipment under the defect of suspended conductive particles5a=E5a/E1,W5bIs the flashover coefficient, W, of a typical basin-type insulator of extra-high voltage GIS equipment under the defect of suspended conductive particles5b=E5b/E1
W6aIs the flashover coefficient, W, of the typical basin-type insulator of the ultrahigh-voltage GIS equipment under the defect of bubbles in the basin body6a=E6a/11.3,W6bIs the flashover coefficient, W, of a typical basin-type insulator of extra-high voltage GIS equipment under the defect of bubbles in the basin body6b=E6b/11.3;
W7aIs the flashover coefficient, W, of a typical basin-type insulator of the ultrahigh-voltage GIS equipment under the condition of the through crack defect of the basin body7a=E7a/E1,W7bIs the flashover coefficient, W, of a typical basin-type insulator of the extra-high voltage GIS equipment under the condition of the through crack defect of the basin body7b=E7b/E1
E1a、E2a、E3a、E4a、E5a、E6a、E7aAnd E1b、E2b、E3b、E4b、E5b、E6b、E7bThe electric field intensity of the typical basin-type insulator of the ultrahigh-voltage and extra-high-voltage GIS equipment calculated in the step 3 under the defects of interface air gaps, basin body surface bulges, basin body surface depressions, attached conductive particles, suspended conductive particles, air bubbles inside the basin body and basin body through cracks is respectively obtained;
typical basin insulation according to extra-high voltage GIS equipmentComprehensive evaluation function W of sub-latent defectsaComprehensive evaluation function W of latent defects of typical basin-type insulator of extra-high voltage GIS equipmentbAnd (4) evaluating the danger grade of the latent defect of the typical basin-type insulator of the GIS equipment.
Preferably, the content of the electric field finite element analysis program for establishing 7 main latent defects existing on the typical basin insulator of the GIS device in the step 2 comprises: the concave surface of the basin body is selected as an object for the defect of the convex surface of the basin body, the defect of the concave surface of the basin body and the defect of the conductive particles attached to the concave surface of the basin body, and the simulation is carried out in a hemispherical shape, and the defect of the suspended conductive particles and the defect of the bubbles in the basin body are simulated in a spherical shape.
Preferably, the electric field distortion coefficient k of the typical basin-type insulator of the GIS device in the step 2 under 7 main latent defectsiDetermined according to the following formula:
ki=β01y12y2
wherein the content of the first and second substances,
y1as defect size, defect size y1The thickness of the air gap is formed under the defect of the interface air gap, the radius of the defect is formed under the defect of the bulge on the surface of the pot body, the defect of the depression on the surface of the pot body, the defect of the attached conductive particles, the defect of the suspended conductive particles and the defect of the bubbles in the pot body, and the thickness of the crack defect is formed under the defect of the penetrating crack of the pot body;
y2as defect location, defect location y2The depth of the air gap is under the defect of the interface air gap, the radial distance of the defect is under the defect of the bulge on the surface of the pot body, the defect of the depression on the surface of the pot body, the defect of the attached conductive particles, the defect of the suspended conductive particles and the defect of the bubbles in the pot body, and the radial distance of the crack defect is under the defect of the penetrating crack of the pot body;
β0first weighting factor for electric field distortion, β1Distorting the second weighting factor for the electric field, β2The third weighting factor is distorted for the electric field.
Preferably, the weighting factor n in step 51、n2、n3、n4、n5、n6And n7The method comprises the following steps:
step 5.1, weighting coefficient n1、n2、n3、n4、n5、n6And n7Expressed as a weighting coefficient ni,i=1,2,3,4,5,6,7;
Step 5.2, carrying out the following grading according to the relative influence degree of various main latent defects on the GIS equipment basin-type insulator: the defects of the attached conductive particles and the penetrating cracks of the pot body have the greatest influence, the defects of the interface air gaps have the next influence, the defects of the bulges on the surface of the pot body have the third influence, the defects of the depressions on the surface of the pot body have the fourth influence, the defects of the bubbles inside the pot body have the fifth influence, and the defects of the suspended conductive particles have the sixth influence;
and 5.3, taking each of the 7 main latent defects as a comparison standard, respectively comparing the comparison standard with each of the 7 main latent defects, and applying a judgment matrix method according to the influence levels of the 7 main latent defects to construct a judgment matrix A, wherein the judgment matrix A has the expression:
Figure BDA0002435747050000061
recording the elements in the judgment matrix A as judgment coefficients aijj is the number of the main latent defect as a comparative reference, and j is 1,2,3,4,5,6, 7;
step 5.4, judging coefficient a given in the judgment matrix AijSubstituting the specific numerical value into formula (1), and obtaining the weighting coefficient n by using formula (2)i
Figure BDA0002435747050000062
Figure BDA0002435747050000063
Wherein, αiThe influence coefficient of the main latent defect is 1,2,3,4,5,6 and 7.
Compared with the prior art, the invention has the following beneficial effects:
1. aiming at the background that the prior art only carries out qualitative analysis on the latent defects of the basin-type insulators and cannot objectively and accurately carry out comprehensive evaluation on the grades of the latent defects of the basin-type insulators to ensure the safe and reliable operation of GIS equipment, the invention constructs a judgment matrix by grading the relative influence degrees of various main latent defects on the basin-type insulators to determine each weighted coefficient value in a comprehensive evaluation function, finally realizes the comprehensive evaluation on the latent defects of the typical basin-type insulators of the ultra/extra-high voltage GIS equipment and has wide practicability and economy.
2. The method comprehensively considers the main latent defects on the basin-type insulator, respectively obtains the value of the comprehensive electric field distortion coefficient k under various defects of the basin-type insulator by the least square method, overcomes the defect that the prior research only calculates the value of the electric field distortion coefficient k caused by different decision variables under various defects of the basin-type insulator, improves the comprehensive evaluation precision of the latent defects of the typical basin-type insulator of the ultra/extra-high voltage GIS equipment, and greatly reduces or avoids various accidents caused by the latent defects of the basin-type insulator.
Drawings
FIG. 1 is a general flow chart of the comprehensive evaluation method for latent defects of typical basin-type insulators of ultra/extra-high voltage GIS equipment.
FIG. 2 is a flowchart of a finite element analysis procedure of electric fields for various latent defects on a basin-type insulator of GIS equipment according to the present invention.
Detailed Description
The technical scheme of the invention is clearly and completely described below with reference to the accompanying drawings.
The embodiment of the invention provides a comprehensive evaluation method for latent defects of typical basin-type insulators of ultra/extra-high voltage GIS equipment, and aims to solve the problem that the prior art only carries out qualitative analysis on the latent defects of the basin-type insulators and cannot objectively and accurately carry out comprehensive evaluation on the latent defect grades of the basin-type insulators.
FIG. 1 is a general flow chart of the comprehensive evaluation method for latent defects of typical basin-type insulators of ultra/extra-high voltage GIS equipment. As can be seen from FIG. 1, the comprehensive assessment method of the present invention comprises the following steps:
step 1, carrying out nondestructive inspection on the typical basin-type insulator of the ultra/extra-high voltage GIS equipment by using an X-ray imaging technology, carrying out image filtering pretreatment on an obtained X-ray image, and finally carrying out classification and identification on defects of the typical basin-type insulator of the ultra/extra-high voltage GIS equipment by using an improved convolutional neural network so as to obtain 7 main latent defects existing on the basin-type insulator of the GIS equipment, wherein the 7 main latent defects are sequentially: interface air gap defect, surface bulge defect of the pot body, surface depression defect of the pot body, attached conductive particle defect, suspended conductive particle defect, bubble defect inside the pot body and pot body penetrating crack defect.
Step 2, establishing an electric field finite element analysis program of 7 main latent defects on the typical basin-type insulator of the GIS equipment, and obtaining an electric field distortion coefficient k of the typical basin-type insulator of the GIS equipment under the 7 main latent defects through simulation calculation and test measurementiWherein, i is the serial number of 7 main latent defects, i ═ 1,2,3,4,5,6,7, respectively represent interface air gap defect, basin body surface bulge defect, basin body surface depression defect, attached conductive particle defect, suspended conductive particle defect, basin body internal bubble defect and basin body through crack defect.
In this embodiment, the contents of the electric field finite element analysis program for establishing 7 main latent defects existing on a typical basin insulator of a GIS device include: the concave surface of the basin body is selected as an object for the defect of the convex surface of the basin body, the defect of the concave surface of the basin body and the defect of the conductive particles attached to the concave surface of the basin body, and the simulation is carried out in a hemispherical shape, and the defect of the suspended conductive particles and the defect of the bubbles in the basin body are simulated in a spherical shape.
In this embodiment, the electric field distortion coefficient k of the typical basin-type insulator of the GIS device under 7 main latent defectsiDetermined according to the following formula:
ki=β01y12y2
wherein the content of the first and second substances,
y1as defect size, defect size y1The thickness of the air gap is formed under the defect of the interface air gap, the radius of the defect is formed under the defect of the bulge on the surface of the pot body, the defect of the depression on the surface of the pot body, the defect of the attached conductive particles, the defect of the suspended conductive particles and the defect of the bubbles in the interior of the pot body, and the thickness of the crack defect is formed under the defect of the penetrating crack of the pot body.
y2As defect location, defect location y2The depth of the air gap is under the defect of the interface air gap, the radial distance of the defect is under the defect of the bulge on the surface of the pot body, the defect of the depression on the surface of the pot body, the defect of the attached conductive particles, the defect of the suspended conductive particles and the defect of the bubbles inside the pot body, and the radial distance of the crack defect is under the defect of the penetrating crack of the pot body.
β0First weighting factor for electric field distortion, β1Distorting the second weighting factor for the electric field, β2A third weighting factor for electric field distortion, β0、β1、β2The numerical value of (A) is obtained by applying the principle of least square method.
FIG. 2 is a flowchart of a finite element analysis procedure of electric fields for various latent defects on a basin-type insulator of GIS equipment according to the present invention. As can be seen from the figure, the electric field finite element analysis program flow chart includes the following contents: firstly, establishing a simulation model of the basin-type insulator containing various defects, and then respectively inputting decision variable defect size y of various defects1And a defect position y2Finally, a control variable method is applied to carry out simulation calculation and test measurement to respectively obtain expressions of electric field distortion coefficients under various defects of the typical basin-type insulator of the GIS equipment, and then the various latent defect conditions of the basin-type insulator measured in the step 1 are respectively substituted into the expressions of the electric field distortion coefficients to obtain the electric field distortion coefficients k under 7 main latent defectsi
Step 3, respectively calculating the electric field intensity E of 7 main latent defects of the typical basin-type insulator of the GIS equipment under the ultrahigh voltageiaElectric field intensity E of 7 main latent defects of typical basin-type insulator of GIS equipment under ultrahigh voltageib,i=1,2,3,4,5,6 and 7, the calculation formula is as follows:
Eia=ki×fia(x)
Eib=ki×fib(x)
wherein:
x is the radial distance of a typical basin-type insulator of the GIS equipment, and the unit is mm;
fia(x) Is the electric field intensity f of a typical basin-type insulator of the GIS equipment under the ultrahigh voltage at different radial distances xib(x) The electric field intensity of a typical basin-type insulator of GIS equipment under the ultrahigh pressure is in unit of kV/mm under different radial distances x; f. ofia(x) And fib(x) The values were obtained by analysis of a large number of experimental data.
And 4, classifying the 7 main latent defects in the step 2 into the following three categories according to different flashover types caused by the 7 main latent defects of the basin-type insulator:
classifying interface air gap defects, attached conductive particle defects, suspended conductive particle defects, and basin penetration crack defects as SF6Gas flashover and its flashover value is recorded as SF6Gas flashover value E1,E1=7.5×(10P)0.75Wherein, P is air pressure with unit of MPa;
classifying the convex defect on the surface of the pot body and the concave defect on the surface of the pot body as SF6The gas flashover along the surface and the flashover value is recorded as SF6Gas surface flashover value E2,E2=6.4×(10P)0.66
Classifying bubble defects inside the basin body as SF6Air flashover and its flashover value is recorded as SF6Air flashover value E3,E3=11.3kV/mm。
Step 5, constructing a comprehensive evaluation function W of the latent defects of the typical basin-type insulator of the ultrahigh-voltage GIS equipmentaComprehensive evaluation function W of latent defects of typical basin-type insulator of extra-high voltage GIS equipmentbThe functional expression is as follows:
Wa=n1W1a+n2W2a+n3W3a+n4W4a+n5W5a+n6W6a+n7W7a
Wb=n1W1b+n2W2b+n3W3b+n4W4b+n5W5b+n6W6b+n7W7b
in the formula:
n1weighting factor, n, corresponding to interface air gap defects2Weighting coefficient, n, corresponding to the bulge defect on the surface of the pot body3Weighting coefficient, n, corresponding to the pot surface indentation defect4Weighting factor, n, corresponding to defect of adhered conductive particles5Weighting factor, n, corresponding to suspended conductive particle defects6Weighting coefficient, n, corresponding to bubble defect inside the basin body7The weight coefficient corresponding to the pot body penetrating crack defect.
W1aIs the flashover coefficient, W, of a typical basin-type insulator of ultrahigh-voltage GIS equipment under the defect of an interface air gap1a=E1a/E1,W1bIs the flashover coefficient, W, of a typical basin-type insulator of extra-high voltage GIS equipment under the defect of an interface air gap1b=E1b/E1
W2aIs the flashover coefficient of a typical basin-type insulator of the ultrahigh-voltage GIS equipment under the defect of the convex surface of the basin body, W2a=E2a/E2,W2bIs the flashover coefficient, W, of a typical basin-type insulator of extra-high voltage GIS equipment under the defect of raised surface of a basin body2b=E2b/E2
W3aIs the flashover coefficient of a typical basin-type insulator of the ultrahigh-voltage GIS equipment under the surface depression defect of a basin body, W3a=E3a/E2,W3bIs the flashover coefficient, W, of a typical basin-type insulator of the extra-high voltage GIS equipment under the surface depression defect of a basin body3b=E3b/E2
W4aThe flashover coefficient, W, of a typical basin-type insulator of ultrahigh-voltage GIS equipment under the defect of conductive particles4a=E4a/E1,W4bThe flashover coefficient W of a typical basin-type insulator of extra-high voltage GIS equipment under the defect of conductive particles4b=E4b/E1
W5aIs the flashover coefficient, W, of a typical basin-type insulator of ultrahigh-voltage GIS equipment under the defect of suspended conductive particles5a=E5a/E1,W5bIs the flashover coefficient, W, of a typical basin-type insulator of extra-high voltage GIS equipment under the defect of suspended conductive particles5b=E5b/E1
W6aIs the flashover coefficient, W, of the typical basin-type insulator of the ultrahigh-voltage GIS equipment under the defect of bubbles in the basin body6a=E6a/11.3,W6bIs the flashover coefficient, W, of a typical basin-type insulator of extra-high voltage GIS equipment under the defect of bubbles in the basin body6b=E6b/11.3;
W7aIs the flashover coefficient, W, of a typical basin-type insulator of the ultrahigh-voltage GIS equipment under the condition of the through crack defect of the basin body7a=E7a/E1,W7bIs the flashover coefficient, W, of a typical basin-type insulator of the extra-high voltage GIS equipment under the condition of the through crack defect of the basin body7b=E7b/E1
E1a、E2a、E3a、E4a、E5a、E6a、E7aAnd E1b、E2b、E3b、E4b、E5b、E6b、E7bAnd (3) respectively calculating the electric field intensity of the typical basin-type insulator of the ultrahigh-voltage and ultrahigh-voltage GIS equipment under the defects of interface air gaps, basin body surface bulges, basin body surface depressions, attached conductive particles, suspended conductive particles, air bubbles inside the basin body and basin body through cracks, wherein the typical basin-type insulator is obtained by calculation in the step 3.
According to the comprehensive evaluation function W of the latent defects of the typical basin-type insulator of the extra-high voltage GIS equipment obtained in the step 5aComprehensive evaluation function W of latent defects of typical basin-type insulator of extra-high voltage GIS equipmentbDanger for latent defects of typical basin-type insulator of GIS (gas insulated switchgear) equipmentThe risk rating is assessed.
In this embodiment, the weighting factor n in step 51、n2、n3、n4、n5、n6And n7The method comprises the following steps:
step 5.1, weighting coefficient n1、n2、n3、n4、n5、n6And n7Expressed as a weighting coefficient ni,i=1,2,3,4,5,6,7;
Step 5.2, carrying out the following grading according to the relative influence degree of various main latent defects on the GIS equipment basin-type insulator: the defects of the attached conductive particles and the penetrating cracks of the pot body have the greatest influence, the defects of the interface air gaps have the next influence, the defects of the bulges on the surface of the pot body have the third influence, the defects of the depressions on the surface of the pot body have the fourth influence, the defects of the bubbles inside the pot body have the fifth influence, and the defects of the suspended conductive particles have the sixth influence;
and 5.3, taking each of the 7 main latent defects as a comparison standard, respectively comparing the comparison standard with each of the 7 main latent defects, and applying a judgment matrix method according to the influence levels of the 7 main latent defects to construct a judgment matrix A, wherein the judgment matrix A has the expression:
Figure BDA0002435747050000111
recording the elements in the judgment matrix A as judgment coefficients aijj is the number of the main latent defect as a comparative reference, and j is 1,2,3,4,5,6, 7;
judging coefficient aijThe values of (a) are determined as follows:
aij1, the influence degree of two main latent defects is in the same grade;
aij2, one major latent defect affects 1 rank higher relative to another major latent defect;
aij3, one major latent defect relative to the other major latent defectThe influence degree is higher by 2 grades;
aij4, one major latent defect affects 3 orders of magnitude more than another major latent defect;
aijone major latent defect is 4 orders of magnitude more affected than another major latent defect;
aij6, one major latent defect affects 5 orders of magnitude more than another major latent defect;
Figure BDA0002435747050000121
one major latent defect is affected by 1 rank less than the other major latent defect;
Figure BDA0002435747050000122
one major latent defect is affected by 2 orders of magnitude less than the other major latent defect;
Figure BDA0002435747050000123
one major latent defect affects less than the other by 3 levels;
Figure BDA0002435747050000124
one major latent defect affects 4 orders of magnitude less than the other major latent defect;
Figure BDA0002435747050000125
one major latent defect is affected by 5 orders of magnitude less than the other major latent defect.
Step 5.4, judging coefficient a given in the judgment matrix AijSubstituting the specific numerical value into formula (1), and obtaining the weighting coefficient n by using formula (2)i
Figure BDA0002435747050000126
Figure BDA0002435747050000127
Wherein, αiThe influence coefficient of the main latent defect reflects the influence importance degree of the interface air gap defect, the basin body surface bulge defect, the basin body surface depression defect, the attached conductive particle defect, the suspended conductive particle defect, the basin body internal bubble defect and the basin body penetrating crack defect in the comprehensive evaluation of the GIS equipment basin-type insulator defect, and i is 1,2,3,4,5,6 and 7.
In this embodiment, let W be the comprehensive evaluation function value WaOr the value W of the comprehensive evaluation functionbThe latent defect risk rating is classified into the following four levels:
when W is more than or equal to 0.91, the defect is a type I defect, namely a hazardous defect, the insulation performance and the operation reliability of the GIS equipment are seriously influenced, and the equipment should be arranged to be replaced by power failure maintenance as soon as possible;
when W is more than or equal to 0.63 and less than 0.91, the defect is a type II defect, namely a serious defect, the possibility of reaching a dangerous defect can be reached when the defect is continuously used, and the maintenance is reasonably arranged and the defect is properly treated;
when W is more than or equal to 0.16 and less than 0.63, the defect is a type III defect, namely a general defect, and the defect can be used continuously and has a possible trend of reaching a warning value, and the defect is detected regularly and is processed appropriately;
when W is more than or equal to 0 and less than 0.16, the defect is a IV-type defect, namely a normal defect, and has no influence on the insulation performance and the operation reliability of the GIS equipment.

Claims (4)

1. A comprehensive evaluation method for defects of a basin-type insulator of ultra/extra-high voltage GIS equipment is characterized by comprising the following steps:
step 1, carrying out nondestructive inspection on the typical basin-type insulator of the ultra/extra-high voltage GIS equipment by using an X-ray imaging technology, carrying out image filtering pretreatment on an obtained X-ray image, and finally carrying out classification and identification on defects of the typical basin-type insulator of the ultra/extra-high voltage GIS equipment by using an improved convolutional neural network so as to obtain 7 main latent defects existing on the basin-type insulator of the GIS equipment, wherein the 7 main latent defects are sequentially: interface air gap defect, surface bulge defect of the pot body, surface depression defect of the pot body, attached conductive particle defect, suspended conductive particle defect, bubble defect inside the pot body and penetrating crack defect of the pot body;
step 2, establishing an electric field finite element analysis program of 7 main latent defects on the typical basin-type insulator of the GIS equipment, and obtaining an electric field distortion coefficient k of the typical basin-type insulator of the GIS equipment under the 7 main latent defects through simulation calculation and test measurementiWherein i is the number of 7 main latent defects, i is 1,2,3,4,5,6,7, which respectively represents interface air gap defect, basin body surface bulge defect, basin body surface depression defect, attached conductive particle defect, suspended conductive particle defect, basin body internal bubble defect and basin body penetrating crack defect;
step 3, respectively calculating the electric field intensity E of 7 main latent defects of the typical basin-type insulator of the GIS equipment under the ultrahigh voltageiaElectric field intensity E of 7 main latent defects of typical basin-type insulator of GIS equipment under ultrahigh voltageib1,2,3,4,5,6,7, and the calculation formula is:
Eia=ki×fia(x)
Eib=ki×fib(x)
wherein:
x is the radial distance of a typical basin-type insulator of the GIS equipment, and the unit is mm;
fia(x) Is the electric field intensity f of a typical basin-type insulator of the GIS equipment under the ultrahigh voltage at different radial distances xib(x) The electric field intensity of a typical basin-type insulator of GIS equipment under the ultrahigh pressure is in unit of kV/mm under different radial distances x;
and 4, classifying the 7 main latent defects in the step 2 into the following three categories according to different flashover types caused by the 7 main latent defects of the basin-type insulator:
air gap of interfaceDefects, defects of attached conductive particles, defects of suspended conductive particles, and defects of tub-through cracks are classified as SF6Gas flashover and its flashover value is recorded as SF6Gas flashover value E1,E1=7.5×(10P)0.75Wherein, P is air pressure with unit of MPa;
classifying the convex defect on the surface of the pot body and the concave defect on the surface of the pot body as SF6The gas flashover along the surface and the flashover value is recorded as SF6Gas surface flashover value E2,E2=6.4×(10P)0.66
Classifying bubble defects inside the basin body as SF6Air flashover and its flashover value is recorded as SF6Air flashover value E3,E3=11.3kV/mm;
Step 5, constructing a comprehensive evaluation function W of the latent defects of the typical basin-type insulator of the ultrahigh-voltage GIS equipmentaComprehensive evaluation function W of latent defects of typical basin-type insulator of extra-high voltage GIS equipmentbThe functional expression is as follows:
Wa=n1W1a+n2W2a+n3W3a+n4W4a+n5W5a+n6W6a+n7W7a
Wb=n1W1b+n2W2b+n3W3b+n4W4b+n5W5b+n6W6b+n7W7b
in the formula:
n1weighting factor, n, corresponding to interface air gap defects2Weighting coefficient, n, corresponding to the bulge defect on the surface of the pot body3Weighting coefficient, n, corresponding to the pot surface indentation defect4Weighting factor, n, corresponding to defect of adhered conductive particles5Weighting factor, n, corresponding to suspended conductive particle defects6Weighting coefficient, n, corresponding to bubble defect inside the basin body7Weighting coefficients corresponding to the pot body penetrating crack defects;
W1ais ultrahighFlashover coefficient, W, of typical basin-type insulator of GIS equipment under interface air gap defect1a=E1a/E1,W1bIs the flashover coefficient, W, of a typical basin-type insulator of extra-high voltage GIS equipment under the defect of an interface air gap1b=E1b/E1
W2aIs the flashover coefficient of a typical basin-type insulator of the ultrahigh-voltage GIS equipment under the defect of the convex surface of the basin body, W2a=E2a/E2,W2bIs the flashover coefficient, W, of a typical basin-type insulator of extra-high voltage GIS equipment under the defect of raised surface of a basin body2b=E2b/E2
W3aIs the flashover coefficient of a typical basin-type insulator of the ultrahigh-voltage GIS equipment under the surface depression defect of a basin body, W3a=E3a/E2,W3bIs the flashover coefficient, W, of a typical basin-type insulator of the extra-high voltage GIS equipment under the surface depression defect of a basin body3b=E3b/E2
W4aThe flashover coefficient, W, of a typical basin-type insulator of ultrahigh-voltage GIS equipment under the defect of conductive particles4a=E4a/E1,W4bThe flashover coefficient W of a typical basin-type insulator of extra-high voltage GIS equipment under the defect of conductive particles4b=E4b/E1
W5aIs the flashover coefficient, W, of a typical basin-type insulator of ultrahigh-voltage GIS equipment under the defect of suspended conductive particles5a=E5a/E1,W5bIs the flashover coefficient, W, of a typical basin-type insulator of extra-high voltage GIS equipment under the defect of suspended conductive particles5b=E5b/E1
W6aIs the flashover coefficient, W, of the typical basin-type insulator of the ultrahigh-voltage GIS equipment under the defect of bubbles in the basin body6a=E6a/11.3,W6bIs the flashover coefficient, W, of a typical basin-type insulator of extra-high voltage GIS equipment under the defect of bubbles in the basin body6b=E6b/11.3;
W7aPenetrability crack of typical basin-type insulator in basin body for ultrahigh-voltage GIS equipmentFlashover coefficient at seam defect, W7a=E7a/E1,W7bIs the flashover coefficient, W, of a typical basin-type insulator of the extra-high voltage GIS equipment under the condition of the through crack defect of the basin body7b=E7b/E1
E1a、E2a、E3a、E4a、E5a、E6a、E7aAnd E1b、E2b、E3b、E4b、E5b、E6b、E7bThe electric field intensity of the typical basin-type insulator of the ultrahigh-voltage and extra-high-voltage GIS equipment calculated in the step 3 under the defects of interface air gaps, basin body surface bulges, basin body surface depressions, attached conductive particles, suspended conductive particles, air bubbles inside the basin body and basin body through cracks is respectively obtained;
according to the comprehensive evaluation function W of the latent defect of the typical basin-type insulator of the ultrahigh-voltage GIS equipmentaComprehensive evaluation function W of latent defects of typical basin-type insulator of extra-high voltage GIS equipmentbAnd (4) evaluating the danger grade of the latent defect of the typical basin-type insulator of the GIS equipment.
2. The comprehensive assessment method for defects of basin-type insulators of extra/extra-high voltage GIS equipment according to claim 1, wherein the step 2 of establishing the electric field finite element analysis program for 7 main latent defects existing on the typical basin-type insulators of GIS equipment comprises the following steps: the concave surface of the basin body is selected as an object for the defect of the convex surface of the basin body, the defect of the concave surface of the basin body and the defect of the conductive particles attached to the concave surface of the basin body, and the simulation is carried out in a hemispherical shape, and the defect of the suspended conductive particles and the defect of the bubbles in the basin body are simulated in a spherical shape.
3. The comprehensive assessment method for the defects of the basin-type insulators of the extra/extra-high voltage GIS equipment according to claim 1, wherein the electric field distortion coefficient k of the typical basin-type insulators of the GIS equipment in the step 2 is under 7 main latent defectsiDetermined according to the following formula:
ki=β01y12y2
wherein the content of the first and second substances,
y1as defect size, defect size y1The thickness of the air gap is formed under the defect of the interface air gap, the radius of the defect is formed under the defect of the bulge on the surface of the pot body, the defect of the depression on the surface of the pot body, the defect of the attached conductive particles, the defect of the suspended conductive particles and the defect of the bubbles in the pot body, and the thickness of the crack defect is formed under the defect of the penetrating crack of the pot body;
y2as defect location, defect location y2The depth of the air gap is under the defect of the interface air gap, the radial distance of the defect is under the defect of the bulge on the surface of the pot body, the defect of the depression on the surface of the pot body, the defect of the attached conductive particles, the defect of the suspended conductive particles and the defect of the bubbles in the pot body, and the radial distance of the crack defect is under the defect of the penetrating crack of the pot body;
β0first weighting factor for electric field distortion, β1Distorting the second weighting factor for the electric field, β2The third weighting factor is distorted for the electric field.
4. The comprehensive assessment method for the defects of the basin-type insulator of the extra/extra-high voltage GIS equipment according to claim 1, is characterized in that: the weighting coefficient n in step 51、n2、n3、n4、n5、n6And n7The method comprises the following steps:
step 5.1, weighting coefficient n1、n2、n3、n4、n5、n6And n7Expressed as a weighting coefficient ni,i=1,2,3,4,5,6,7;
Step 5.2, carrying out the following grading according to the relative influence degree of various main latent defects on the GIS equipment basin-type insulator: the defects of the attached conductive particles and the penetrating cracks of the pot body have the greatest influence, the defects of the interface air gaps have the next influence, the defects of the bulges on the surface of the pot body have the third influence, the defects of the depressions on the surface of the pot body have the fourth influence, the defects of the bubbles inside the pot body have the fifth influence, and the defects of the suspended conductive particles have the sixth influence;
and 5.3, taking each of the 7 main latent defects as a comparison standard, respectively comparing the comparison standard with each of the 7 main latent defects, and applying a judgment matrix method according to the influence levels of the 7 main latent defects to construct a judgment matrix A, wherein the judgment matrix A has the expression:
Figure FDA0002435747040000041
recording the elements in the judgment matrix A as judgment coefficients aijj is the number of the main latent defect as a comparative reference, and j is 1,2,3,4,5,6, 7;
step 5.4, judging coefficient a given in the judgment matrix AijSubstituting the specific numerical value into formula (1), and obtaining the weighting coefficient n by using formula (2)i
Figure FDA0002435747040000051
Figure FDA0002435747040000052
Wherein, αiThe influence coefficient of the main latent defect is 1,2,3,4,5,6 and 7.
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