CN111349909A - Reaction chamber with protector - Google Patents

Reaction chamber with protector Download PDF

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Publication number
CN111349909A
CN111349909A CN201811583844.8A CN201811583844A CN111349909A CN 111349909 A CN111349909 A CN 111349909A CN 201811583844 A CN201811583844 A CN 201811583844A CN 111349909 A CN111349909 A CN 111349909A
Authority
CN
China
Prior art keywords
plate
gas
reaction chamber
cavity
carrier plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811583844.8A
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Chinese (zh)
Inventor
庞云玲
王祎
南建辉
丁建
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zishi Energy Co.,Ltd.
Original Assignee
Shenzhen Yongshenglong Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Yongshenglong Technology Co ltd filed Critical Shenzhen Yongshenglong Technology Co ltd
Priority to CN201811583844.8A priority Critical patent/CN111349909A/en
Publication of CN111349909A publication Critical patent/CN111349909A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

Abstract

The invention discloses a reaction chamber with a protective device, which comprises: the spray device comprises a cavity, and a carrier plate, a spray device and an auxiliary device which are arranged in the cavity; the carrier plate is used for bearing the wafer; the spraying device is positioned above the carrier plate; the auxiliary device is positioned below the carrier plate; a protective device is also arranged in the cavity and used for separating an upper area and a lower area of the carrier plate; and/or for changing the direction of flow of the gas stream in the gas passages in the chamber to pass the gas stream through a region outside the film growth zone and to limit the exchange of gas from the film growth zone with gas outside the film growth zone. By utilizing the invention, the reacted gas, byproducts and particles thereof are discharged from the exhaust port on the cavity, thereby protecting parts outside the growth area, improving the quality of products, prolonging the service life of the parts in the cavity and shortening the maintenance period and the maintenance cost of the parts in the cavity.

Description

Reaction chamber with protector
Technical Field
The invention relates to MOCVD equipment, in particular to a reaction chamber with a protection device.
Background
The MOCVD (Metal-organic Chemical Vapor Deposition) technique is a technique of carrying out an epitaxial Deposition process on a substrate in a thermal decomposition reaction manner by using an organic compound of a group III element and a group II element, a hydride of a group V element and a group vi element, etc. as reaction gases for crystal growth, and growing epitaxial material layers of various group III-V compound semiconductors and group II-vi compound semiconductors and their multiple solid solutions, wherein a region where a crystal grows is a growth region.
The form of solids precipitated from the gas phase is mainly the following: thin films, whiskers and grains are formed on the surface of a solid body, and particles are formed in a gas. In the reaction chamber of the MOCVD equipment, the crystal growth source is flammable, explosive and toxic substances, and byproducts and particles thereof are generated in the reaction process of the MOCVD equipment in the process flow, and the existence of the byproducts and the particles not only affects the product quality, pollutes the reaction chamber and affects the service life of parts in the reaction chamber, but also affects the subsequent process flow.
Disclosure of Invention
The invention aims to provide a reaction chamber with a protection device, which aims to solve the problem that byproducts and particles are easy to pollute the reaction chamber in the prior art and prolong the service life of parts in the reaction chamber.
The invention provides a reaction chamber with a protective device, which comprises: the spraying device comprises a cavity, and a carrier plate, a spraying device and an auxiliary device which are arranged in the cavity;
the carrier plate is used for bearing a wafer;
the spraying device is positioned above the carrier plate;
the auxiliary device is positioned below the carrier plate,
the cavity is internally provided with a protection device, and the protection device is used for separating an upper area and a lower area of the carrier plate; and/or for changing the direction of flow of the gas stream in the gas passages in the chamber to pass the gas stream through a region outside the film growth zone and to limit the exchange of gas from the film growth zone with gas outside the film growth zone.
Preferably, the protection device is an annular plate, and is parallel to the carrier plate and arranged in the cavity with a gap, and the annular plate separates an upper area and a lower area of the carrier plate.
Preferably, the guard comprises a cross plate and a vertical plate;
diaphragm, riser are cyclic annular, the diaphragm with the support plate is parallel, the inner ring and the riser of diaphragm are fixed mutually, the diaphragm is mutually perpendicular just with the riser distributes in the both sides of diaphragm.
Preferably, the guard comprises a cross plate and a vertical plate;
the transverse plate and the vertical plate are both annular, the transverse plate is parallel to the carrier plate and has a gap, the vertical plate is perpendicular to the transverse plate, and the vertical plate is fixed to the middle of one side face of the carrier plate, which faces the transverse plate.
Preferably, the spraying device further comprises a first spraying pipeline for spraying protective gas, the first spraying pipeline is communicated with the protective gas inlet on the cavity, and the first spraying pipeline is positioned above the outer side of the spraying device.
Preferably, the auxiliary device comprises a heating device and a cooling device, and the heating device is located below the carrier plate; the cooling device is positioned below the heating device; the cooling device is characterized by further comprising a second spraying pipeline for spraying protective gas, the second spraying pipeline is communicated with the protective gas inlet, and the second spraying pipeline is uniformly distributed below the cooling device.
Preferably, a first channel is arranged on the spraying device and communicated with an exhaust port on the cavity.
Preferably, the first passage is provided at an outer end of the shower device.
Preferably, a plurality of shielding gas channels are arranged on the cooling device, and the plurality of shielding gas channels are uniformly distributed on the cooling device.
Preferably, the cooling device further comprises a lining plate which is a semi-annular plate, is fixed on the bottom wall of the cavity and surrounds the cooling device.
Preferably, the lining plate is arranged on the inner side of the lining plate and is lower than the lining plate in height;
the inner lining plate comprises a body and a plurality of connecting parts, the body is a semi-annular plate, each connecting part is a flat plate, and the connecting parts are arranged at the bottom of the body at intervals, so that a gap is reserved between the installed inner lining plate and the bottom wall of the cavity.
Preferably, the process gas inlet channel and the protective gas inlet channel outside the cavity are both provided with an air inlet valve;
an exhaust valve is arranged in an exhaust channel outside the cavity;
and the exhaust channel outside the cavity is also connected with a vacuum pump.
The reaction chamber with the protection device provided by the invention separates the upper area and the lower area of the carrier plate or changes the flow direction of the airflow in the chamber by arranging the protection device, firstly standardizes the peripheral path of the reaction gas, limits the exchange of the gas in the film growth area and the gas outside the film growth area, reduces the parasitic reaction caused by the overflow of the reaction gas, and secondly enables the reacted gas, byproducts and particles thereof to be discharged out of the chamber under the action of the airflow, protects the parts outside the growth area, prolongs the service life of the parts in the chamber, and shortens the maintenance period and the maintenance cost of the parts in the chamber.
Drawings
FIG. 1 is a schematic structural diagram of a reaction chamber with a protective device according to an embodiment of the present invention;
FIG. 2 is a diagram illustrating an operating state of a reaction chamber with a shielding device according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a side view of a liner plate in a reaction chamber with a shield according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a reaction chamber with a protective device according to a second embodiment of the present invention;
FIG. 5 is a diagram illustrating an operating state of a reaction chamber with a shielding device according to a second embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a reaction chamber with a protective device according to a third embodiment of the present invention;
fig. 7 is a diagram of an operating state of a reaction chamber with a protective device according to a third embodiment of the present invention.
Description of reference numerals:
1-cavity 2-carrier plate 3-spray device 4-heating device 5-cooling device 6-exhaust port 7 a-protective device 7 b-protective device 7 c-protective device 8-first spray pipeline 9-second spray pipeline 10-first channel 11-second channel 12-lining plate 121-body 122-connecting part 13-exhaust port
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative only and should not be construed as limiting the invention.
Example one
As shown in fig. 1 and 2, an embodiment of the present invention provides a reaction chamber with a protective device, which includes a chamber body 1, and a carrier plate 2, a spraying device 3 and an auxiliary device disposed in the chamber body 1. A heating device 4 and a cooling device 5. The carrier plate 2 is used for carrying a wafer; the spraying device 3 is positioned above the carrier plate 2; auxiliary means are located below the carrier plate 2, which auxiliary means may comprise heating means 4 and cooling means 5, the heating means 4 being located below the carrier plate 2; the cooling device 5 is located below the heating device 4.
The spraying device 3 is used for introducing a reaction gas into the cavity 1 (a channel or an inlet for introducing the reaction gas is not shown in the figure), and the heating device 4 may be a heating lamp tube. The wafer is placed on the carrier plate 2 and is placed between the spraying device 3 and the heating lamp tube, and after the reaction gas enters the cavity 1, chemical vapor deposition is uniformly carried out on the wafer in the growth area under the specific temperature and pressure environment.
A protection device 7a is further arranged in the cavity 1, and the protection device 7a is used for isolating the upper area and the lower area of the carrier plate 2; and/or for changing the direction of flow of the gas stream in the gas passages in the chamber to pass the gas stream through a region outside the film growth zone and to limit the exchange of gas from the film growth zone with gas outside the film growth zone.
The above-mentioned protective device 7a may be specifically an annular plate, and as shown in fig. 1, the annular plate may be provided in the chamber 1 parallel to the carrier plate 2 with a gap, the annular plate may be provided on the inner sidewall of the chamber 1, or the annular plate may be provided on another member in the chamber 1, and the annular plate separates the upper region from the lower region of the carrier plate 2. The upper area of the carrier plate 2 is a growth area, and the lower area is a heating area.
Various gases (including reaction gases and protective gases) entering the cavity 1 form an airflow field under the influence of annular gaps formed by the protective device 7a, the cooling device 5 (which can be a cooling plate specifically) and the spraying device 3 under the action of high pressure and low pressure. The carrier plate 2 divides the cavity 1 into an upper part and a lower part of a growth area and a heating area, and the air flow is communicated with the side surface of the carrier plate 2. The growth zone refers to the area between the spray device 3 and the carrier plate 2 in the vertical direction in the figure. After the reaction gas enters the growth zone, most of the reaction gas is limited in the growth zone by the protection device 7a, and the gas, the byproducts and the particles thereof after the reaction are discharged from the exhaust port 6 under the action of the introduced protection gas. An exhaust port 6 is arranged on the cavity 1 above the spraying device 3, and an exhaust port 13 can be arranged on the bottom wall of the cavity 1. The present embodiment preferably has a first channel 10 on the spraying device 3, and the first channel 10 is communicated with the exhaust port 6 on the cavity 1. The reacted gas, by-products and particles thereof are discharged from the exhaust port 6 above the shower unit 3 through the first passage 10. The first channel 10 is preferably arranged at the outer end of the shower 3 so as to avoid the reaction gas inlet on the shower 3.
The introduction of the protective gas into the growth zone can be realized by the following steps: the reaction chamber further comprises a first spraying pipeline 8 for spraying protective gas, the first spraying pipeline 8 is communicated with the protective gas inlet on the cavity 1, and the first spraying pipeline 8 is positioned above the outer side of the spraying device 3. The protective gas sprayed from the first spraying pipe 8 enters the growth area to form the gas flow field direction as shown in fig. 2.
Further, the reaction chamber further comprises a second spraying pipeline 9 for spraying protective gas, the second spraying pipeline 9 is communicated with the protective gas inlet, and the second spraying pipeline 9 is uniformly distributed below the cooling device 5. By also passing protective gas below the cooling device 5, the gas pressure is further increased, and various gas flow directions are formed to purge the reaction gas and particles below the cooling device 5.
Preferably, a shielding gas channel 11 is provided on the cooling device 5, and the shielding gas is provided to allow the shielding gas introduced below the cooling device 5 to enter the heating zone through the shielding gas channel 11 to clean the heating device 4. The number of the protective gas channels 11 may be multiple, and the multiple protective gas channels 11 are uniformly distributed on the cooling device 5, so that the introduced protective gas can be fully purged to each heating lamp tube.
Preferably, the reaction chamber further comprises a lining plate 14, which is a semi-annular plate, fixed on the bottom wall of the chamber 1 and surrounding the cooling device 5. The lining plate 14 is arranged in a semi-annular shape, enclosing the cooling device 5 therein. The lining plate 14 is arranged around the cooling device 5, and can limit the direction of air flow, so that the air flow can purge the heating area through the protective gas channel 11 arranged on the cooling device 5. The gas continues to flow upward and is discharged from the gas outlet 6. Preferably, as shown in fig. 3, the reaction chamber further comprises an inner lining plate 12 which is arranged at the inner side of the lining plate 14 and is lower than the lining plate 14 in height; the lining plate 12 comprises a body 121 and a plurality of connecting parts 122, the body 121 is a semi-annular plate, each connecting part 122 is a flat plate, and the connecting parts 122 are arranged at the bottom of the body 121 at intervals, so that a gap of 1-2mm is left between the installed lining plate 12 and the bottom wall of the cavity 1. A small amount of gas flows through the bottom of the lining plate 12, flows upward through the gap between the lining plate 12 and the lining plate 14, and a very small amount of gas reaches the exhaust port 13 through the outside of the lining plate 14 to be exhausted.
The protective gas in the heating area is sprayed from bottom to top, one part of the protective gas passes through the protective gas channel 11 on the cooling device 5 to sweep the heating device 4 and is discharged from the periphery of the heating device 4 upwards, the other part of the protective gas reaches the lining plate 12 and is discharged from the gap between the lining plate 12 and the cooling device 5 upwards, and a small part of the gas is discharged from the exhaust port 13 formed at the bottom of the cavity 1.
Preferably, the process gas inlet channel and the protective gas inlet channel outside the chamber 1 are provided with inlet valves, the exhaust channel outside the chamber 1 is provided with an exhaust valve, and the exhaust channel outside the chamber 1 is further connected with a vacuum pump.
After the reaction gas enters the chamber 1 through the spraying device 3, the reaction gas diffuses to the wafer surface and then is adsorbed to the wafer surface, and then a reaction (chemical reaction, migration, crystal lattice incorporation, and the like) occurs, after which additional products are desorbed from the wafer surface and byproducts are released from the wafer, leaving the wafer surface. The additional products, by-products and unreacted gases generated after the reaction process are carried out to the outside of the chamber 1 by the flow of the gas flow.
After entering the chamber 1 through the gas inlet, the protective gas prevents the unreacted gas, the reacted gas, the byproducts and the particles thereof in the growth area from diffusing to the periphery, and can carry the unreacted gas, the reacted gas, the byproducts and the particles away from the chamber 1. The exhaust port 6 and the exhaust port 13 may be connected to a vacuum pump outside the chamber 1, and the reacted gas, byproduct and particles thereof may pass through the exhaust passage in the chamber 1 and then exit through the exhaust port 6. An air inlet valve and an air outlet valve can be arranged in the air inlet channel and the air outlet channel, and the air inlet and the air outlet of the process gas and the protective gas are controlled in a closed loop mode through a vacuum pump, the air outlet valve and the air inlet valve, so that the stability of an airflow field is realized under the process gases with different pressures.
Example two
As shown in fig. 4 and 5, a reaction chamber with a guard is provided in the second embodiment of the present invention, which is different from the first embodiment in the structure of the guard. In this embodiment, the protection device 7b includes a horizontal plate and a vertical plate; the transverse plate and the vertical plate are annular, the transverse plate is parallel to the support plate 2, the inner ring of the transverse plate is fixed to the vertical plate, and the transverse plate is perpendicular to the vertical plate and the vertical plate is distributed on two sides of the transverse plate.
The diaphragm is perpendicular to the riser and the riser distributes in the both sides of diaphragm, can shelter from the clearance between spray set 3 and the support plate 2 to a larger area ground, avoids the reaction gas in the growth zone to flow into the heating zone and other regions, and the direction of air current is as shown in figure 5.
EXAMPLE III
As shown in fig. 6 and 7, a reaction chamber with a guard is provided in the third embodiment of the present invention, which is different from the first embodiment in the structure of the guard. In this embodiment, the protection device 7c includes a horizontal plate and a vertical plate; the transverse plates and the vertical plates are annular, the transverse plates are parallel to the carrier plate 2 and have gaps, the vertical plates are perpendicular to the transverse plates, and the vertical plates are fixed in the middle of one side face, facing the carrier plate, of the transverse plates.
The structure of the protective device 7c enables the transverse plate to extend to be close to the carrier plate 2 as much as possible, further prevents the gas flow from flowing to the heating area, and further prevents the reaction gas in the growth area from flowing into the heating area and other areas, and the direction of the gas flow is shown in fig. 7.
The construction, features and functions of the present invention are described in detail in the embodiments illustrated in the drawings, which are only preferred embodiments of the present invention, but the present invention is not limited by the drawings, and all equivalent embodiments modified or changed according to the idea of the present invention should fall within the protection scope of the present invention without departing from the spirit of the present invention covered by the description and the drawings.

Claims (12)

1. A reaction chamber with a guard, comprising: the spraying device comprises a cavity, and a carrier plate, a spraying device and an auxiliary device which are arranged in the cavity;
the carrier plate is used for bearing a wafer;
the spraying device is positioned above the carrier plate;
the auxiliary device is positioned below the carrier plate,
it is characterized in that the preparation method is characterized in that,
a protection device is further arranged in the cavity and used for separating an upper area and a lower area of the carrier plate; and/or for changing the direction of flow of the gas stream in the gas passages in the chamber to pass the gas stream through a region outside the film growth zone and to limit the exchange of gas from the film growth zone with gas outside the film growth zone.
2. The reaction chamber of claim 1, wherein the guard is an annular plate disposed within the chamber parallel to the carrier plate with a gap, and the annular plate separates an upper region from a lower region of the carrier plate.
3. The reaction chamber of claim 1, wherein the guard comprises a cross plate and a riser;
diaphragm, riser are cyclic annular, the diaphragm with the support plate is parallel, the inner ring and the riser of diaphragm are fixed mutually, the diaphragm is mutually perpendicular just with the riser distributes in the both sides of diaphragm.
4. The reaction chamber of claim 1, wherein the guard comprises a cross plate and a riser;
the transverse plate and the vertical plate are both annular, the transverse plate is parallel to the carrier plate and has a gap, the vertical plate is perpendicular to the transverse plate, and the vertical plate is fixed to the middle of one side face of the carrier plate, which faces the transverse plate.
5. The reaction chamber as claimed in any one of claims 2 to 4, further comprising a first spray pipe for spraying the shielding gas, wherein the first spray pipe is communicated with the shielding gas inlet on the chamber body, and the first spray pipe is positioned above the outer side of the spray device.
6. The reaction chamber as claimed in claim 5, wherein the auxiliary device comprises a heating device and a cooling device, and the heating device is located below the carrier plate; the cooling device is positioned below the heating device; the cooling device is characterized by further comprising a second spraying pipeline for spraying protective gas, the second spraying pipeline is communicated with the protective gas inlet, and the second spraying pipeline is uniformly distributed below the cooling device.
7. The reaction chamber as claimed in claim 6, wherein the spraying device is provided with a first channel, and the first channel is communicated with an exhaust port on the chamber body.
8. The reaction chamber as claimed in claim 7, wherein the first passage is provided at an outer end of the shower device.
9. The reaction chamber as claimed in claim 7, wherein a plurality of shielding gas passages are provided on the cooling device, and the plurality of shielding gas passages are uniformly distributed on the cooling device.
10. The reaction chamber as claimed in any one of claims 2 to 4, further comprising a lining plate, wherein the lining plate is a semi-annular plate, is fixed on the bottom wall of the chamber body, and surrounds the cooling device.
11. The reaction chamber as claimed in claim 10, further comprising an inner lining plate disposed inside the lining plate and having a height lower than the lining plate;
the inner lining plate comprises a body and a plurality of connecting parts, the body is a semi-annular plate, each connecting part is a flat plate, and the connecting parts are arranged at the bottom of the body at intervals, so that a gap is reserved between the installed inner lining plate and the bottom wall of the cavity.
12. The reaction chamber as claimed in claim 1, wherein an inlet valve is disposed in each of the process gas inlet passage and the shielding gas inlet passage outside the chamber body;
an exhaust valve is arranged in an exhaust channel outside the cavity;
and the exhaust channel outside the cavity is also connected with a vacuum pump.
CN201811583844.8A 2018-12-24 2018-12-24 Reaction chamber with protector Pending CN111349909A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811583844.8A CN111349909A (en) 2018-12-24 2018-12-24 Reaction chamber with protector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811583844.8A CN111349909A (en) 2018-12-24 2018-12-24 Reaction chamber with protector

Publications (1)

Publication Number Publication Date
CN111349909A true CN111349909A (en) 2020-06-30

Family

ID=71195522

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811583844.8A Pending CN111349909A (en) 2018-12-24 2018-12-24 Reaction chamber with protector

Country Status (1)

Country Link
CN (1) CN111349909A (en)

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Effective date of registration: 20210219

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