CN111342331A - Semiconductor side pumping temperature-control-free laser - Google Patents
Semiconductor side pumping temperature-control-free laser Download PDFInfo
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- CN111342331A CN111342331A CN201911143137.1A CN201911143137A CN111342331A CN 111342331 A CN111342331 A CN 111342331A CN 201911143137 A CN201911143137 A CN 201911143137A CN 111342331 A CN111342331 A CN 111342331A
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/0014—Monitoring arrangements not otherwise provided for
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08059—Constructional details of the reflector, e.g. shape
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10061—Polarization control
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
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Abstract
The invention discloses a semiconductor side-pumped temperature-control-free laser, which comprises a laser chamber, wherein an upper channel and a lower channel are arranged in the laser chamber, one side of the laser chamber is provided with an output mirror (102) corresponding to the upper channel and a reflecting mirror (103) corresponding to the lower channel, and the other side of the laser chamber is provided with a turning mirror (402) covering the end parts of the upper channel and the lower channel; a polarizing group (5) is arranged between the reflector (103) and the turning mirror (402) and in the lower channel; a side pump module group (8) and a laser rod group (7) are arranged between the output mirror (102) and the turning mirror (402) and in the upper channel, a multi-wavelength Bar strip (802) for emitting light with different wavelengths is arranged in the side pump module group (8), and the multi-wavelength Bar strip is arranged on the periphery of the laser rod group (7). The semiconductor side-pumped temperature-control-free laser realizes startup without temperature control within the range of-40 ℃ to 65 ℃, has high laser output energy, can increase the length of a laser resonant cavity within a limited length, and has compact structure.
Description
Technical Field
The invention belongs to the technical field of solid lasers, and particularly relates to a semiconductor side-pumped temperature-control-free laser.
Background
The solid laser has wide application in the technical fields of military laser ranging, military laser irradiation, military imaging and the like, and the development direction of the solid laser is temperature control free, low power consumption, miniaturization and high stability.
The existing solid laser only corresponds to one wavelength, and the laser corresponding to the wavelength can only work under a specific temperature condition, so if the laser is a normal-temperature-adapted laser, the laser needs to be heated for about 3min in advance under a high-temperature or low-temperature environment, so that the laser can normally work only at the normal temperature, and the requirement of modern military on equipment is difficult to meet due to long preparation time; in addition, due to the fact that the temperature control circuit is high in power consumption, the battery has insufficient cruising ability, and the sustainable combat ability of equipment is difficult to guarantee.
Disclosure of Invention
Aiming at the defects or improvement requirements in the prior art, the invention provides a semiconductor side-pumped temperature-control-free laser, which emits light with different wavelengths through multi-wavelength Bar of a side-pump module group, thereby realizing temperature-control-free startup within the range of-40 ℃ to 65 ℃; through the arrangement of the positions of the turning mirror, the reflecting mirror and the output mirror, multiple times of laser turning is realized in the laser cavity with limited length, so that the length of the laser resonant cavity is increased in the limited length, the laser output energy is high, and the miniaturization and the compactness are considered at the same time.
In order to achieve the above object, the present invention provides a semiconductor side-pumped temperature-control-free laser, which comprises a laser chamber having an upper channel and a lower channel, wherein the laser chamber has an upper channel and a lower channel, one side of the laser chamber is provided with an output mirror corresponding to the upper channel and a reflector corresponding to the lower channel, and the other side of the laser chamber is provided with a turning mirror covering the end parts of the upper channel and the lower channel;
a polarizing group is arranged between the reflector and the turning mirror and in the lower channel; the laser device comprises an output mirror, a turning mirror, a side pump module group and a laser rod group, wherein the side pump module group is arranged between the output mirror and the turning mirror and in an upper channel, the side pump module group is internally provided with a multi-wavelength Bar strip for emitting light with different wavelengths, the multi-wavelength Bar strip is arranged on the periphery of the laser rod group and used for emitting light with various wavelengths, the light is absorbed by the laser rod group and then is emitted to pass through the turning mirror, a reflecting mirror and an output mirror for reflection, and therefore multiple turning is achieved in a laser cavity, and the length of a laser resonant cavity is increased within a limited length.
Furthermore, an optical rotation group and an optical path adjusting group are sequentially arranged between the output mirror and the laser rod group.
Further, the optical path adjusting group comprises two optical wedges which are arranged in parallel front and back.
Further, the light path adjusting group further comprises a light splitter seat, the light splitters are all fixed on the light splitter seat, and second arc-shaped grooves penetrating through the periphery of the light splitter seat are formed in positions corresponding to the light splitters.
Further, the optical rotation group comprises an optical rotation group mounting seat and a wave plate fixed on the optical rotation group mounting seat, and a first arc-shaped groove penetrating through the periphery of the wave plate is formed in the optical rotation group mounting seat.
Furthermore, an electro-optic Q-switching group is arranged between the reflector and the polarizing group.
Furthermore, the side pump module group also comprises a temperature sensor and a heat sink for heat dissipation, the multi-wavelength Bar strips are fixed in an arc of the heat sink, and the temperature sensor is installed in the heat sink.
Furthermore, a heat dissipation group is arranged around the side pump module group and comprises a plurality of heat dissipation fins, and a fan is arranged on one side of each heat dissipation fin.
Further, still include the laser instrument body, the inside cavity of laser instrument body, the top is equipped with the motor wire hole, and the side is equipped with laser rod aligning screw hole.
Furthermore, the laser rod is arranged in the hollow space of the laser body, a rod sleeve is fixed at one end of the laser rod, and a heat dissipation sleeve is sleeved at the other end of the laser rod.
In general, compared with the prior art, the above technical solution contemplated by the present invention can achieve the following beneficial effects:
(1) the semiconductor side-pumped temperature-control-free laser emits light with different wavelengths through the multi-wavelength Bar of the side pump module group, so that the temperature control-free startup in the range of-40 ℃ to 65 ℃ is realized; through the arrangement of the positions of the turning mirror, the reflecting mirror and the output mirror, multiple times of laser turning is realized in the laser cavity with limited length, so that the length of the laser resonant cavity is increased in the limited length, the laser output energy is high, and the miniaturization and the compactness are considered at the same time.
(2) According to the semiconductor side-pumped temperature-control-free laser, the optical rotation group is added in the optical path, so that the polarization state of laser is adjusted, the output is increased, the depolarization effect of the pyramid is improved, and the output of laser energy is increased; and a light path adjusting group is added, and the angle of the laser which is turned back and forth is adjusted through the arrangement of the two optical wedges, so that the coaxiality error between the output mirror and the reflecting mirror caused by installation is avoided.
(3) According to the semiconductor side-pumped temperature-control-free laser, the electro-optical Q-switch group is used for matching with external drive to control a switch of laser output so as to achieve the purpose of pulse output; the temperature sensor is arranged in the heat sink and used for monitoring the temperature of the multiple Bar strips in real time and feeding the temperature back to the control circuit to protect the multiple wavelength Bar strips.
Drawings
FIG. 1 is a schematic structural diagram of a semiconductor side-pumped temperature-free laser according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a lens holding group in an embodiment of the present invention;
FIG. 3 is a cross-sectional view of an optically active set in an embodiment of the present invention;
FIG. 4 is a cross-sectional view of an optical path adjustment assembly in an embodiment of the present invention;
FIG. 5 is a cross-sectional view of an optical path turning group according to an embodiment of the present invention;
FIG. 6 is a cross-sectional view of a polarizing group in an embodiment of the invention;
FIG. 7 is a cross-sectional view of an electro-optic Q-switch group in an embodiment of the invention;
FIG. 8 is a cross-sectional view of a laser bar set in an embodiment of the invention;
FIG. 9 is a front view of a side pump module in an embodiment of the present invention;
FIG. 10 is a top view of a side pump module in an embodiment of the present invention;
FIG. 11 is a cross-sectional view of a heat dissipating module in an embodiment of the present invention;
fig. 12 is a cross-sectional view of a body set in an embodiment of the invention.
In all the figures, the same reference numerals denote the same features, in particular: 1-a lens fixing group, 2-an optical rotation group, 3-a light path adjusting group, 4-a light path turning group, 5-a polarization group, 6-an electro-optic Q-switch group, 7-a laser rod group, 8-a side pump module group, 9-a heat dissipation group, 10-a body group, 11-a laser rod group pressing ring and 12-a cover plate;
101-end plate, 102-output mirror, 103-reflector, 104-sealing pad, 105-lens pressing ring;
201-optical rotation group mounting seat, 202-wave plate, 203-pressing ring, 204-optical rotation group mounting hole and 205-first arc-shaped groove;
301-light wedge mounting seat, 302-light wedge, 303-light wedge seat, 304-light wedge frame, 305-second arc-shaped groove and 306-V-shaped groove;
401-turning mounting fixing seat, 402-turning mirror, 403-pressing plate and 404-light guide hole;
501-polarizing installation seat, 502-polarizer; 601-installing an insulating base and 602-electro-optic Q-switching crystal; 701-upper sleeve, 702-laser rod, 703-heat dissipation sleeve and 704-heat conduction soft material; 801-heat sink, 802-multi-wavelength Bar, 803-temperature sensor; 901-radiating fin, 902-fan mounting seat, 903-fan; 1001 laser body, 1002-sealing gasket, 1003-laser body and 1004-laser rod correcting screw hole;
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Fig. 1 is a schematic structural diagram of a semiconductor side-pumped temperature-free laser in an embodiment of the present invention. As shown in fig. 1, the semiconductor side-pumped temperature-free laser of the present invention includes a lens fixing group 1, an optical rotation group 2, a light path adjusting group 3, a light path turning group 4, a polarization group 5, an electro-optical Q-tuning group 6, a laser rod group 7, a side pump module group 8, a heat dissipation group 9, a body group 10, a laser rod group pressing ring 11, and a cover plate 12. The cover plate 12 encloses a cavity of the laser, wherein the optical rotation group 2, the optical path adjusting group 3, the laser rod group 7, the side pump module group 8, the polarizing group 5, the electro-optical Q-switching group 6 and the body group 10 are arranged in the cavity of the laser, and the lens fixing group 1 and the optical path turning group 4 are respectively arranged at two ends of the cavity.
An upper channel and a lower channel which are parallel to each other are arranged in the laser cavity, the optical rotation group 2, the optical path adjusting group 3, the side pump module group 8 and the laser rod group 7 are arranged in the upper channel, the polarization group 5 and the electro-optical Q-switching group 6 are arranged in the lower channel, and laser is turned back and forth in the upper channel and the lower channel through the arrangement of the optical path turning group 4, the lens fixing group 1 and the upper channel and the lower channel, so that the length of a laser resonant cavity is increased within a limited length, and the length of the laser is shortened.
Fig. 2 is a cross-sectional view of a lens holding group in an embodiment of the present invention. As shown in fig. 1 and 2, the lens fixing assembly 1 includes an end plate 101, an output mirror 102, a reflecting mirror 103, a sealing gasket 104 and a lens pressing ring 105, the end plate 101 is fixed at an end of one end of a chamber, the end plate 101 is perpendicular to an axis of the chamber, an output mirror mounting hole and a reflecting mirror mounting hole are formed on an outer side of the end plate 101, and two sealing gasket mounting holes 108 corresponding to the output mirror mounting hole and the reflecting mirror mounting hole are formed on an inner side of the end plate; the output mirror mounting hole and the reflector mounting hole are coaxial; preferably, the axis of the output mirror mounting hole coincides with the axis of the upper channel, and the axis of the reflector mounting hole coincides with the axis of the lower channel, so that smooth back-and-forth turning of laser in the upper channel and the lower channel can be guaranteed.
Preferably, the axes of the output mirror mounting hole and the mirror mounting hole are parallel to the axis of the chamber.
The output mirror 102 is fixed in the output mirror mounting hole, the reflector 103 is fixed in the reflector mounting hole, the two gasket mounting holes 108 are respectively provided with a gasket 104, and the output mirror 102 and the reflector 103 are respectively provided with a lens clamping ring 105, so that the output mirror 102 and the reflector 103 are fixed on the end plate 101.
Preferably, the output mirror 102 is a Gaussian output mirror, the central transmittance is 65% -75%, further, the output mirror 102 is coated with a 2-order Gaussian film, and the diameter of the film spot is phi 5.2 mm;
preferably, the mirror 103 is a pyramid mirror.
The Gaussian output mirror is matched with the pyramid to form the laser resonant cavity, so that light spots are homogenized, the unbalance resisting stability is good, the beam divergence angle of the laser output is small, the damage of a film system of an optical element in the cavity is avoided, and the purposes of stability and miniaturization are achieved while temperature control and low power consumption are avoided.
FIG. 3 is a cross-sectional view of an optically active set in an embodiment of the present invention. As shown in fig. 1 and 3, the optical rotation group 2 is disposed in the upper channel and adjacent to the output mirror 102, and the optical rotation group 2 is used for adjusting the polarization state of the laser light to increase the energy of the laser light output; the optical rotation group 2 comprises an optical rotation group mounting seat 201, a wave plate 202, a pressing ring 203, an optical rotation group mounting hole 204 and a first arc-shaped groove 205, the optical rotation group mounting seat 201 is fixed on a partition plate of an upper channel and a lower channel, the optical rotation group mounting seat 201 is provided with the optical rotation group mounting hole 204, and the axis of the optical rotation group mounting hole 204 is superposed with the axis of an output mirror mounting hole; the wave plate 202 is fixed in the optical rotation group mounting hole 204, and the pressing ring 203 is mounted in the optical rotation group mounting hole 204;
preferably, the optical rotation group mounting base 201 is provided with a first arc-shaped groove 205, the first arc-shaped groove 205 penetrates through the periphery of the wave plate 202, and the rotating wave plate 202 is stirred through an opening of the first arc-shaped groove 205, so that the clamping ring 203 can be fastened when the laser energy is maximum; the present invention is not limited to the structure including the first arc-shaped slot 205 for adjusting the rotation of the wave plate 202, and other structures capable of achieving the shifting of the wave plate 202 are within the scope of the present invention.
The arrangement of the optical rotation group is used for adjusting the polarization state, increasing the output, improving the depolarization effect of the pyramid and increasing the output of laser energy.
Fig. 4 is a cross-sectional view of an optical path adjustment assembly in an embodiment of the present invention. As shown in fig. 1 and 4, the optical path adjusting group 3 is disposed between the optically active group 2 and the laser rod group 7. Light path adjusting group 3 includes light wedge mount pad 301, light wedge 302, light wedge seat 303, light wedge frame 304, second arc wall 305 and V type groove 306, is equipped with light wedge frame 304 on the light wedge mount pad 301, and light wedge seat 303 is fixed in light wedge frame 304, and light wedge 302 includes two, and the front and back parallel is fixed in light wedge seat 303, realizes laser resonance through light wedge 302 and rectifies. Because there is a coaxiality error caused by installation in the process of installing the output mirror 102 and the reflecting mirror 103, the angle of the laser which is turned back and forth is adjusted through the arrangement of the optical wedge 302, so that the coaxiality error between the output mirror 102 and the reflecting mirror 103 caused by installation is avoided.
Preferably, the optical splitter frame 304 is provided with a V-shaped groove 306, and the optical splitter seat 303 is fixed in the optical splitter installation seat 301 by means of an external fastening screw and the V-shaped groove 306.
Preferably, the position that corresponds light wedge 302 on the light wedge seat 303 has all opened second arc wall 305, and second arc wall 305 link up the periphery to light wedge seat 303, stirs rotatory light wedge seat 303 through the opening of second arc wall 305 to the relative position of two light wedges 302 of adjustment fixing in light wedge seat 303, thereby realizes laser resonance and rectifies.
Fig. 12 is a cross-sectional view of a body set in an embodiment of the invention. As shown in fig. 1 and 12, the body assembly 10 includes a laser body 1001, a sealing gasket 1002, a motor wire outlet hole 1003, and a laser rod aligning screw hole 1004, the laser body 1001 is hollow, the top of the laser body is provided with the motor wire outlet hole 1003, the motor wire outlet hole 1003 is used for guiding out an electrode wire of the side pump module, the side of the laser body 1001 is provided with the laser rod aligning screw hole 1004, the side is provided with an opening corresponding to the upper and lower channels, and the opening is provided with the sealing gasket 1002.
The interface is installed at the middle part of the laser body, and the installation mode is insensitive to temperature stress deformation, so that the operation reliability of the laser can be improved.
Fig. 8 is a cross-sectional view of a laser bar set in an embodiment of the invention. As shown in fig. 1 and 8, the laser rod set 7 is disposed between the optical path adjusting set 3 and the optical path turning set 4 and is configured to absorb laser light, the laser rod set 7 includes a rod sleeve 701, a laser rod 702, a heat dissipation sleeve 703 and a heat conductive soft material 704, the laser rod 702 is disposed in a hollow space of the laser body 1001, the laser rod 702 is configured to emit laser light, and an end of the laser rod 702 is located outside the hollow space, wherein one end of the laser rod 702 is fixed in the rod sleeve 701, the other end is sleeved with the heat dissipation sleeve 703, and the heat dissipation sleeve 703 is configured to dissipate heat of the laser rod 702 and cool the laser rod. The heat dissipation sleeve 703 is in contact with the laser rod 702 through a heat conduction soft material, so that damage to the laser rod 702 caused by material deformation under an environmental test is prevented.
The end part of the laser rod group 7 at one end of the rod sleeve 701 is provided with a laser rod pressing ring 11, and the laser rod pressing ring 11 is used for fastening the corrected laser rod group 7.
Preferably, the coefficient of expansion of the sleeve 701 is comparable to the coefficient of expansion of the laser bar 702.
Preferably, the contact length of the laser bar 702 and the bar sleeve 701 is not less than 5 mm.
Preferably, the laser rod is doped with 0.8% -1% of Nd: and two ends of the YAG rod are subjected to heat dissipation treatment, so that the heat balance of the laser rod under the repeated frequency work is ensured, and the stable output of the laser is further ensured.
FIG. 9 is a front view of a side pump module in an embodiment of the invention. FIG. 10 is a top view of a side pump module in an embodiment of the invention. As shown in fig. 1, 9 and 10, the side pump module 8 is disposed in the hollow space of the laser body 1001, and the side pump module 8 includes a heat sink 801, a multi-wavelength Bar802 and a temperature sensor 803, the heat sink 801 is used for dissipating heat, the multi-wavelength Bar (used for emitting light with different wavelengths) is uniformly welded in an arc of the heat sink 801, the temperature sensor 803 is installed in the heat sink 801, and the temperature sensor 803 is used for monitoring the temperature of the multi-Bar 802 in real time and feeding back the temperature to the control circuit, so as to protect the multi-wavelength Bar 802. The multi-wavelength Bar802 can normally work within the range of-40-65 ℃, and does not need to be preheated or precooled to reach a small temperature range, so that the requirements of modern military equipment on high efficiency and high speed can be met. The invention takes full consideration of the influence of the drift of the output wavelength of the multi-wavelength side pump module, the amplification and the loss of the one-way gain, the length of the laser medium and the heat absorption effect of the doping concentration on the laser output energy and the stability under the environmental test, optimizes and combines the laser output energy and the stability, ensures that the emitted heat is low, the absorption efficiency is high, the heat balance is stable, and achieves small volume, light weight and stable performance under the reliable output condition of ensuring that the laser is free from temperature control and low power consumption.
Preferably, the wavelengths of the multi-wavelength Bar strips 802 are chosen to be 796nm, 811nm and 817 nm. Further, the ratio of the three wavelengths is 1:1: 1.
Fig. 11 is a cross-sectional view of a heat dissipation assembly in an embodiment of the invention. As shown in fig. 11, the heat dissipation group 9 is disposed around the side pump module 8, the heat dissipation group 9 includes a plurality of heat dissipation fins 901, a fan mount 902, and a fan 903, the heat dissipation fins 901 are mounted on one side of the multi-wavelength Bar802, the fan mount 902 is disposed on the heat dissipation fins 901, the fan 903 is fixed on the fan mount 902, and the heat dissipation group 9 is configured to dissipate heat of the heat dissipation fins 901 through the fan 903. The efficiency of the heat dissipation group is 20% higher than that of the common heat dissipation mode.
FIG. 5 is a cross-sectional view of an optical path turning group according to an embodiment of the present invention. As shown in fig. 5, the light path turning set 4 is disposed at the end of the other end of the chamber, the light path turning set 4 includes a turning mounting base 401, a turning mirror 402, a pressing plate 403 and a light guide hole 404, the turning mounting base 401 is fixed at the end of the chamber, the turning mounting base 401 is a hollow structure, the turning mirror 402 is disposed in the turning mounting base 401, the pressing plate 403 is fixed at the outer end of the turning mounting base 401, and the pressing plate 403 is used for sealing the hollow structure of the turning mounting base 401 to protect the turning mirror 402; the inner side of the turning mounting fixing seat 401 is provided with two light guide holes 404 along the vertical direction, the light guide holes 404 correspond to the position of the sealing gasket 1002, the light guide holes 404 on the upper side correspond to the upper channel, and the light guide holes 404 on the lower side correspond to the lower channel. The laser is turned through the two light guide holes 404, the direction of the light path is changed after passing through the light guide holes, and the length of the laser resonant cavity is increased within a limited length.
When the multi-wavelength Bar802 of the side pump module works, the laser power supply is electrified, the multi-wavelength Bar802 of the side pump module emits light, the light passes through the laser rod 702 and then is incident on the turning mirror 402 from the light guide hole 404 on the upper side, and the light is turned through the turning mirror 402 and then is emitted from the light guide hole 404 on the lower side in parallel with the incident light.
Preferably, the turning mirror is a corner prism, and the corner prism has a self-aligning characteristic, so that incident light and emergent light can be ensured to be always parallel, and the consistency of a resonant light path is further ensured.
FIG. 6 is a cross-sectional view of a polarizing stack in an embodiment of the invention. As shown in fig. 1 and 6, the polarizing group 5 is disposed in the lower channel, the polarizing group 5 includes a polarizing mount 501 and a polarizer 502, and the polarizer 502 is fixed on the polarizing mount 501.
Preferably, the polarizer 502 is a polarization splitting prism, and the parallelism difference between two light-passing surfaces is 10 ″.
FIG. 7 is a cross-sectional view of an electro-optic Q-switch group in an embodiment of the invention. As shown in fig. 7, the electro-optical Q-switched group 6 is disposed between the polarization group 5 and the reflector 103, the electro-optical Q-switched group includes an installation insulating base 601 and an electro-optical Q-switched crystal 602, the electro-optical Q-switched crystal 602 is fixed on the installation insulating base 601, and the electro-optical Q-switched crystal 602 is used for matching with an external driver to control the switching of laser output to achieve the purpose of pulse output.
When the laser rod bending mirror works, a laser power supply is electrified, the side pump module 8 emits light, the light passes through the laser rod 702 and then is incident on the bending mirror 402 from the light guide hole 404 on the upper side, is bent by the bending mirror 402 and then is emitted from the light guide hole 404 on the lower side in parallel with the incident light, and then is reflected by the reflector 103 after passing through the polarizer 502 and the electro-optic Q-switching crystal 602; then the light beam sequentially passes through the electro-optic Q-switching crystal 602 and the polarizer 502 to be incident on the turning mirror 402 at the lower side, is turned by the turning mirror 402 and then is emitted out from the light guide hole 404 at the upper side in parallel with the incident light, passes through the laser rod 702 and then sequentially passes through the light wedge 302 and the wave plate 202 to reach the output mirror 102; the output mirror 1 has a reflection function, reflected light sequentially passes through the wave plate 202, the optical splitter 302, the laser rod 702, the turning mirror 402, the polarizer 502 and the electro-optic Q-switching crystal 602 to reach the reflector 103, and is reflected by the reflector 103, so that laser is turned back and forth in an upper channel and a lower channel, and the length of a laser resonant cavity is increased within a limited length. The laser energy is continuously increased in the process of back and forth folding, and the laser energy is output from the output mirror 102 when reaching the output range of the output mirror 102.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A semiconductor side-pumped temperature-control-free laser is characterized by comprising a laser chamber, wherein an upper channel and a lower channel are arranged in the laser chamber, one side of the laser chamber is provided with an output mirror (102) corresponding to the upper channel and a reflecting mirror (103) corresponding to the lower channel, and the other side of the laser chamber is provided with a turning mirror (402) covering the end parts of the upper channel and the lower channel;
a polarizing group (5) is arranged between the reflector (103) and the turning mirror (402) and in a lower channel; a side pump module group (8) and a laser rod group (7) are arranged between the output mirror (102) and the turning mirror (402) and in the upper channel, a multi-wavelength Bar (802) for emitting light with different wavelengths is arranged in the side pump module group (8), the multi-wavelength Bar is arranged on the periphery of the laser rod group (7) and used for emitting light with multiple wavelengths, the light is absorbed by the laser rod group (7) and then emitted to be reflected by the turning mirror (402), the reflecting mirror (103) and the output mirror (102), and therefore multiple times of turning back in the laser cavity is achieved, and the laser resonant cavity length is increased in a limited length.
2. A semiconductor side-pumped temperature-free laser as claimed in claim 1, wherein an optical rotation group (2) and an optical path adjusting group (3) are sequentially arranged between the output mirror (102) and the laser rod group (7).
3. A semiconductor side-pumped temperature-free laser according to claim 2, wherein the optical path adjusting group (3) comprises two optical wedges (302) arranged in parallel front and back.
4. The semiconductor side-pumped temperature-control-free laser device according to claim 3, wherein the optical path adjusting group (3) further comprises optical splitter seats (303), the optical splitters (302) are all fixed on the optical splitter seats (303), and second arc-shaped grooves (305) penetrating through the peripheries of the optical splitter seats (303) are all formed in positions corresponding to the optical splitters (302).
5. The semiconductor side-pumped temperature-free laser device as claimed in claim 2, wherein the optical rotation group (7) comprises an optical rotation group mounting seat (201) and a wave plate (202) fixed on the optical rotation group mounting seat (201), and the optical rotation group mounting seat (201) is provided with a first arc-shaped groove (205) penetrating to the periphery of the wave plate (202).
6. A semiconductor side-pumped temperature-free laser as claimed in claim 1, wherein an electro-optical Q-switch group (6) is disposed between the reflector (103) and the polarization group (5).
7. A semiconductor side-pumped temperature-free control laser as claimed in claim 1, wherein the side pump module group (8) further comprises a temperature sensor and a heat sink (801) for heat dissipation, the multi-wavelength Bar bars (802) are fixed in an arc of the heat sink (801), and the temperature sensor (803) is installed in the heat sink (801).
8. The semiconductor side-pumped temperature-free laser device as claimed in claim 7, wherein a heat dissipation group (9) is disposed around the side-pump module group (8), the heat dissipation group (9) includes a plurality of heat dissipation fins (901), and a fan (903) is disposed on one side of the heat dissipation fins (901).
9. The semiconductor side-pumped temperature-control-free laser device according to claim 1, further comprising a laser body (1001), wherein the laser body (1001) is hollow, a motor wire outlet hole (1003) is formed in the top of the laser body, and a laser rod aligning screw hole (1004) is formed in the side of the laser body.
10. A semiconductor side-pumped temperature-free laser as claimed in claim 9, wherein the laser rod (702) is disposed in the hollow space of the laser body (1001), and has a rod sleeve (701) fixed at one end and a heat dissipation sleeve (703) sleeved at the other end.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911143137.1A CN111342331A (en) | 2019-11-20 | 2019-11-20 | Semiconductor side pumping temperature-control-free laser |
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| CN201911143137.1A CN111342331A (en) | 2019-11-20 | 2019-11-20 | Semiconductor side pumping temperature-control-free laser |
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| CN113451870A (en) * | 2021-05-13 | 2021-09-28 | 中国科学院西安光学精密机械研究所 | High-power laser suitable for extreme environment and laser generation method thereof |
| CN116247492A (en) * | 2022-12-28 | 2023-06-09 | 湖北华中长江光电科技有限公司 | Athermalization and thermal insensitivity laser for single-wavelength angular pumping |
| CN117650413A (en) * | 2023-10-20 | 2024-03-05 | 北京新光远望光电科技有限公司 | Laser resonant cavity and laser |
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