CN111341482A - Heterojunction solar cell conductive silver paste and low-temperature curing method thereof - Google Patents
Heterojunction solar cell conductive silver paste and low-temperature curing method thereof Download PDFInfo
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- CN111341482A CN111341482A CN201911408532.8A CN201911408532A CN111341482A CN 111341482 A CN111341482 A CN 111341482A CN 201911408532 A CN201911408532 A CN 201911408532A CN 111341482 A CN111341482 A CN 111341482A
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- silver paste
- conductive silver
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- heterojunction solar
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 238000013035 low temperature curing Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000001035 drying Methods 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000001723 curing Methods 0.000 claims abstract description 13
- 238000007650 screen-printing Methods 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 11
- 238000007639 printing Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 5
- 238000004321 preservation Methods 0.000 claims abstract description 4
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 6
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 3
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 claims description 3
- 239000001856 Ethyl cellulose Substances 0.000 claims description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims description 3
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229920001249 ethyl cellulose Polymers 0.000 claims description 3
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 3
- 239000006259 organic additive Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses a heterojunction solar cell conductive silver paste and a low-temperature curing method thereof, wherein the low-temperature curing method comprises the following steps: s1, the heterojunction solar cell conductive silver paste is placed in a heat preservation cabinet at 0-10 ℃ for storage; s2 is used for carrying out screen printing by using the heterojunction solar cell conductive silver paste; s3, placing the semiconductor silicon chip printed with the conductive silver paste in drying equipment for drying treatment; and S4, curing the silver paste printed on the semiconductor silicon chip printed with the conductive silver paste. The heterojunction solar cell conductive silver paste provided by the invention has good low-temperature curing property; the contact strength of the base material is higher; having a low gate line resistance; has low contact resistivity; has good printing performance.
Description
Technical Field
The invention relates to the technical field of photovoltaic industry of solar cells, in particular to heterojunction solar cell conductive silver paste and a low-temperature curing method thereof.
Background
Heterojunction solar cells were first developed by the japan sanyo (panasonic) corporation and are hybrid solar cells made using crystalline silicon base and amorphous silicon thin films. The upper surface of the cell is TCO, so that charges cannot generate polarization phenomenon on the TCO on the surface of the cell, PID phenomenon does not exist, the efficiency of the HJT cell is 1-2% higher than that of a P-type monocrystalline silicon cell, and the Staebler-Wronski effect common in amorphous silicon solar cells cannot occur in the HJT solar cell. Meanwhile, the N-type silicon wafer adopted by the HJT battery is doped with phosphorus, so that the phenomenon of light attenuation is almost avoided. The upper surface and the lower surface of the HJT battery are symmetrical in structure, no mechanical stress is generated, and the thinning can be smoothly realized. Therefore, heterojunction solar cells are the next generation of ultra-efficient cell technology with the most industrialization potential. The solar cell conductive silver paste is orderly distributed on two sides of the semiconductor silicon wafer through a screen printing process. By a rapid sintering technology, grid lines (generally called grid lines) which are arranged in order are formed on a silicon chip, and fine grid lines (also called secondary grids) are generally distributed on the front surface of the solar cell in a range of 40-60 micrometers, width of 15-20 micrometers and height of 20 micrometers to lead out electrons excited by photoelectrons. The main grid lines are 1.2-1.6 mm wide and 10 microns high, and the electrons excited by photons guided out of the auxiliary grid lines are gathered. The solar cell conductive silver paste in the prior art has the defects of poor low-temperature curing performance, low substrate contact strength and poor grid line resistance and printing performance, and brings obstruction to the development of heterojunction solar cells.
Disclosure of Invention
The invention aims to provide a heterojunction solar cell conductive silver paste and a low-temperature curing method thereof.
The heterojunction solar cell conductive silver paste provided by the invention comprises the following components in percentage by weight: 50-85% of organic composite silver powder, 2-8% of glass powder and 1-5.0% of MnO2 powder; the epoxy resin is characterized by also comprising 10% of epoxy resin (EP), wherein the sum of the weight percentages of the components is 100%.
The organic binder comprises the following components in percentage by weight: 0.05-10% of ethyl cellulose, 8-45% of organic solvent, 35-90% of organic film-forming additive and 0-15% of organic additive, wherein the total weight percentage of the components is 100%. The organic solvent is any one or combination of diethylene glycol butyl ether, diethylene glycol butyl ether acetate, dibutyl phthalate or dioctyl phthalate. The organic composite silver powder is a silver powder material with 0.03-2% of surfactant wrapped on the surface. The components of the glass powder comprise 30% of SiO2, 20% of Al2O3, 5% of CaO, 15% of BaO, 0% of B2O3 and 8% of Bi2O 3.
The invention provides a low-temperature curing method of heterojunction solar cell conductive silver paste, which comprises the following steps: s1, the heterojunction solar cell conductive silver paste is placed in a heat preservation cabinet at 0-10 ℃ for storage; s2 is used for carrying out screen printing by using the heterojunction solar cell conductive silver paste; s3, placing the semiconductor silicon chip printed with the conductive silver paste in drying equipment for drying treatment; and S4, curing the silver paste printed on the semiconductor silicon chip printed with the conductive silver paste.
The step S2 is performed by using the conductive silver paste for a heterojunction solar cell according to the first embodiment, where the printing speed is 300mm/S, a 35 μm line width non-mesh screen is adopted, the line width of a reference sample is 46 to 47 μm, the line width of 02H is maintained at 45 to 46 μm, and the line width of 03H is maintained at 47 to 48 μm. And S3, placing the semiconductor silicon chip printed with the conductive silver paste in drying equipment for drying, wherein the drying temperature is 150 ℃, and the drying time is 10 minutes. And S4, curing the silver paste printed on the semiconductor silicon chip printed with the conductive silver paste, wherein the curing temperature is 200 ℃, and the curing time is 40 minutes.
The heterojunction solar cell conductive silver paste provided by the invention has good low-temperature curing property; the contact strength of the base material is higher; having a low gate line resistance; has low contact resistivity; has good printing performance. The low-temperature curing method for the conductive silver paste of the heterojunction solar cell provided by the invention effectively improves the peeling strength of the silver paste, reduces the contact resistivity of the silver paste, effectively narrows the line width, and improves the printing performance of the conductive silver paste.
Drawings
Fig. 1 is a schematic view of a low-temperature curing method of a heterojunction solar cell conductive silver paste according to a second embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
The embodiment provides a heterojunction solar cell conductive silver paste which comprises the following components in percentage by weight:
50-85% of organic composite silver powder, 2-8% of glass powder and 1-5.0% of MnO2 powder; the epoxy resin is characterized by also comprising 10% of epoxy resin (EP), wherein the sum of the weight percentages of the components is 100%.
The organic binder comprises the following components in percentage by weight:
0.05-10% of ethyl cellulose, 8-45% of organic solvent, 35-90% of organic film-forming additive and 0-15% of organic additive, wherein the total weight percentage of the components is 100%.
The organic solvent is any one or combination of diethylene glycol butyl ether, diethylene glycol butyl ether acetate, dibutyl phthalate or dioctyl phthalate.
The organic composite silver powder is a silver powder material with 0.03-2% of surfactant wrapped on the surface.
The components of the glass powder comprise 30% of SiO2, 20% of Al2O3, 5% of CaO, 15% of BaO, 0% of B2O3 and 8% of Bi2O 3.
The conductive silver paste for the heterojunction solar cell provided by the embodiment has a relative value of contact resistivity of 0.6-0.8.
The conductive silver paste for the heterojunction solar cell provided by the embodiment has the main grid peel strength of 0.5-1.0N/mm.
Example two
As shown in fig. 1, the present embodiment provides a low temperature curing method of a conductive silver paste for a heterojunction solar cell, including the following steps:
s1, placing the heterojunction solar cell conductive silver paste in the first embodiment in a 0-10 ℃ heat preservation cabinet for storage;
s2 step of screen printing using the conductive silver paste of the heterojunction solar cell of the first embodiment;
s3, placing the semiconductor silicon chip printed with the conductive silver paste in drying equipment for drying treatment;
and S4, curing the silver paste printed on the semiconductor silicon chip printed with the conductive silver paste.
The step S2 is used for the step of screen printing with the heterojunction solar cell conductive silver paste of the first embodiment, and the printing speed is 300 mm/S.
The S2 is used in the step of screen printing with the conductive silver paste of the heterojunction solar cell described in the first embodiment, and a non-mesh-junction screen with a line width of 35 μm is used.
The S2 was used in the step of screen printing using the heterojunction solar cell conductive silver paste of example one, and the baseline linewidth was 46-47 μm.
The S2 was used in the step of screen printing using the heterojunction solar cell conductive silver paste described in example one, with the 02H line width maintained at 45-46 μm.
The S2 was used in the step of screen printing using the heterojunction solar cell conductive silver paste described in example one, the 03H line width was maintained at 47-48 μm.
And S3, placing the semiconductor silicon chip printed with the conductive silver paste in drying equipment for drying, wherein the drying temperature is 150 ℃, and the drying time is 10 minutes.
And S4, curing the silver paste printed on the semiconductor silicon chip printed with the conductive silver paste, wherein the curing temperature is 200 ℃, and the curing time is 40 minutes.
The low-temperature curing method for the conductive silver paste of the heterojunction solar cell provided by the invention effectively improves the peeling strength of the silver paste, reduces the contact resistivity of the silver paste, effectively narrows the line width, and improves the printing performance of the conductive silver paste.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
1. The conductive silver paste for the heterojunction solar cell is characterized by comprising the following components in percentage by weight:
50-85% of organic composite silver powder, 2-8% of glass powder, 1-5.0% of MnO2 powder, 10-35% of organic adhesive and 10% of epoxy resin (EP), wherein the total weight percentage of the components is 100%.
2. The heterojunction solar cell conductive silver paste of claim 1, wherein said organic binder comprises the following components in weight percent:
0.05-10% of ethyl cellulose, 8-45% of organic solvent, 35-90% of organic film-forming additive and 0-15% of organic additive, wherein the total weight percentage of the components is 100%.
3. The heterojunction solar cell conductive silver paste of claim 2 wherein the organic solvent is any one or a combination of diethylene glycol butyl ether or diethylene glycol butyl ether acetate or dibutyl phthalate or dioctyl phthalate.
4. The heterojunction solar cell conductive silver paste of claim 3, wherein said organic composite silver powder is a silver powder material coated with 0.03-2% of a surfactant.
5. The heterojunction solar cell conductive silver paste of claim 4 wherein the composition of the glass frit comprises 30% SiO2, 20% Al2O3, 5% CaO, 15% BaO, 0% B2O3, and 8% Bi2O 3.
6. The low-temperature curing method of the heterojunction solar cell conductive silver paste is characterized by comprising the following steps of:
s1, placing the heterojunction solar cell conductive silver paste in the first embodiment in a 0-10 ℃ heat preservation cabinet for storage;
s2 step of screen printing using the conductive silver paste of the heterojunction solar cell of the first embodiment;
s3, placing the semiconductor silicon chip printed with the conductive silver paste in drying equipment for drying treatment;
and S4, curing the silver paste printed on the semiconductor silicon chip printed with the conductive silver paste.
7. The method for low temperature curing of conductive silver paste for heterojunction solar cell of claim 6, wherein said S2 is used for the step of screen printing with the conductive silver paste for heterojunction solar cell of the first embodiment, the printing speed is 300mm/S, a 35 μm line width non-mesh screen is used, the reference line width is 46-47 μm, the 02H line width is 45-46 μm, and the 03H line width is 47-48 μm.
8. The method for curing the conductive silver paste of the heterojunction solar cell of claim 7, wherein the step of S3 is to place the semiconductor silicon wafer printed with the conductive silver paste in a drying device for drying, wherein the drying temperature is 150 ℃ and the drying time is 10 minutes.
9. The method for low-temperature curing of conductive silver paste for heterojunction solar cells of claim 8, wherein the step of S4 is performed to cure the silver paste printed on the semiconductor silicon wafer printed with the conductive silver paste, wherein the curing temperature is 200 ℃ and the curing time is 40 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911408532.8A CN111341482A (en) | 2019-12-31 | 2019-12-31 | Heterojunction solar cell conductive silver paste and low-temperature curing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911408532.8A CN111341482A (en) | 2019-12-31 | 2019-12-31 | Heterojunction solar cell conductive silver paste and low-temperature curing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111341482A true CN111341482A (en) | 2020-06-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911408532.8A Pending CN111341482A (en) | 2019-12-31 | 2019-12-31 | Heterojunction solar cell conductive silver paste and low-temperature curing method thereof |
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| Country | Link |
|---|---|
| CN (1) | CN111341482A (en) |
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- 2019-12-31 CN CN201911408532.8A patent/CN111341482A/en active Pending
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