CN111326473A - Silicon wafer bearing device and edge polishing equipment - Google Patents
Silicon wafer bearing device and edge polishing equipment Download PDFInfo
- Publication number
- CN111326473A CN111326473A CN202010267836.3A CN202010267836A CN111326473A CN 111326473 A CN111326473 A CN 111326473A CN 202010267836 A CN202010267836 A CN 202010267836A CN 111326473 A CN111326473 A CN 111326473A
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- Prior art keywords
- silicon wafer
- porous
- vacuum cavity
- sucker
- wafer carrier
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 87
- 239000010703 silicon Substances 0.000 title claims abstract description 87
- 238000005498 polishing Methods 0.000 title claims abstract description 14
- 238000001179 sorption measurement Methods 0.000 claims abstract description 27
- 230000000149 penetrating effect Effects 0.000 claims abstract description 5
- 239000000919 ceramic Substances 0.000 claims description 27
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 23
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 23
- 238000004140 cleaning Methods 0.000 claims description 17
- 239000011148 porous material Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 239000008367 deionised water Substances 0.000 claims description 13
- 229910021641 deionized water Inorganic materials 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 72
- 239000002585 base Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 9
- 238000007517 polishing process Methods 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000007142 ring opening reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000011001 backwashing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
- B24B47/12—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces by mechanical gearing or electric power
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a silicon chip bearing device and an edge polishing device, wherein the device comprises: the base is internally provided with a vacuum cavity, the upper surface of the base is provided with an annular flange, and an annular opening of the annular flange is communicated with the vacuum cavity; the porous sucker is embedded in the annular opening of the annular flange, the porous sucker is provided with a plurality of adsorption holes penetrating through the upper surface and the lower surface of the porous sucker, and the porous sucker is used for adsorbing a silicon wafer; and the vacuum pipeline is communicated with the vacuum cavity and is used for vacuumizing the vacuum cavity. According to the silicon wafer bearing device provided by the embodiment of the invention, the problem that adsorption traces are generated on the adsorption surface of the silicon wafer due to long-time adsorption of the silicon wafer can be solved, and the production yield of the silicon wafer is improved.
Description
Technical Field
The invention relates to the technical field of polishing, in particular to a silicon wafer bearing device and edge polishing equipment.
Background
With the continuous development of semiconductor technology, more strict requirements are put on the geometric parameters, the edge and the surface roughness of the silicon wafer. If the edge of the silicon wafer is rough, the silicon wafer has the phenomena of unevenness and the like, the silicon wafer may be acted by external force in various subsequent processing technologies, when the external force exceeds the maximum load of the wafer or stress is excessively concentrated, the problems of wafer cracks, wafer fragments and the like are caused, and the yield of the wafer technology is seriously influenced, so that the edge damage is removed as far as possible by polishing the edge of the silicon wafer, and the smooth edge of the silicon wafer is obtained.
The edge polishing process of the silicon wafer firstly processes the nicked part of the silicon wafer, then the silicon wafer is transferred to a silicon wafer carrier to process the edge of the silicon wafer by using a polishing pad, and the silicon wafer is damaged in equipment due to stress concentration in the process of polishing the edge. In the process of cleaning the damaged silicon wafer, other silicon wafers which are being processed simultaneously stay on the silicon wafer carrier because the equipment cannot normally operate. Most of the existing edge polishing carriers are formed by attaching latticed non-woven fabrics to a polytetrafluoroethylene base with grooves, and as a silicon wafer is adsorbed on the carrier for a long time, latticed traces which are difficult to eliminate and have the shape similar to the surface shape of the carrier are generated on the adsorbed surface, so that the silicon wafer is damaged, and finally, the silicon wafer is scrapped, and unnecessary waste is caused.
Disclosure of Invention
In view of the above, the invention provides a silicon wafer bearing device and an edge polishing device, which are used for solving the problem that when a silicon wafer carrier in the prior art adsorbs a silicon wafer for a long time, adsorption traces are formed on the surface of the silicon wafer, so that the silicon wafer is damaged, and finally the silicon wafer is scrapped.
In order to solve the technical problems, the invention adopts the following technical scheme:
an embodiment of an aspect of the present invention provides a silicon wafer carrying device, including:
the base is internally provided with a vacuum cavity, the upper surface of the base is provided with an annular flange, and an annular opening of the annular flange is communicated with the vacuum cavity;
the porous sucker is embedded in the annular opening of the annular flange, the porous sucker is provided with a plurality of adsorption holes penetrating through the upper surface and the lower surface of the porous sucker, and the porous sucker is used for adsorbing a silicon wafer;
and the vacuum pipeline is communicated with the vacuum cavity and is used for vacuumizing the vacuum cavity.
Optionally, the porous chuck is a silicon carbide porous ceramic chuck.
Optionally, the diameter of the silicon carbide porous ceramic sucker is 260-270 mm, and the thickness of the silicon carbide porous ceramic sucker is 0.8-1.2 cm.
Optionally, the open porosity of the silicon carbide porous ceramic sucker is 60-70%.
Optionally, the pore diameter of the pores of the silicon carbide porous ceramic chuck is between 50 μm and 100 μm.
Optionally, the method further includes:
and the deionized water pipeline is communicated with the vacuum cavity and is used for injecting deionized water into the vacuum cavity.
Optionally, the method further includes:
the pivot, the pivot with the bottom fixed connection of base, the axis of pivot with the axis collineation of porous sucking disc, the pivot is used for the drive the base winds rotary motion is to the axis of pivot.
Optionally, the vacuum pipeline is arranged inside the rotating shaft.
Optionally, the method further includes:
and the cleaning nozzle points to the lower surface of the silicon wafer adsorbed on the porous sucker and is connected with a cleaning liquid pipeline and used for providing cleaning liquid for the cleaning nozzle.
In another aspect, the embodiment of the invention further provides edge polishing equipment, which comprises the silicon wafer bearing device as described in any one of the above.
The technical scheme of the invention has the following beneficial effects:
according to the silicon wafer bearing device provided by the embodiment of the invention, the problem that adsorption traces are generated on the adsorption surface of the silicon wafer due to long-time adsorption of the silicon wafer can be solved, and the production yield of the silicon wafer is improved.
Drawings
Fig. 1 is a schematic structural diagram of a silicon wafer carrying device according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
As shown in fig. 1, an embodiment of the invention provides a silicon wafer carrying apparatus, which may include a base 1, a porous chuck 2 and a vacuum pipe 4, wherein the base 1 is in a flat inverted hollow cylinder shape, a vacuum chamber 12 is formed inside the base 1, an annular flange 11 is formed on an upper surface of the base 1, the annular flange 11 protrudes from the upper surface of the base 1, and an opening of the annular flange 11 is communicated with the vacuum chamber 12 inside the base 1; the porous sucker 2 is embedded in the ring opening of the annular flange 11, namely, the diameter of the porous sucker 2 is matched with the diameter of the ring opening of the annular flange 11, and the thickness of the porous sucker 2 is also matched with the height of the annular flange 11, so that the porous sucker 2 can be firmly connected when being embedded in the ring opening of the annular flange 11, of course, the edge of the porous sucker 2 and the ring opening flange 11 can be further reinforced through a common connecting piece, and the porous sucker 2 is provided with a plurality of adsorption holes penetrating through the upper surface and the lower surface of the porous sucker 2, so that the silicon wafer 3 can be adsorbed; the vacuum pipeline 4 is communicated with a vacuum cavity 12 in the base 1 and is used for vacuumizing the vacuum cavity 12, namely, the porous sucker 2 is embedded in the annular opening of the annular flange 11, the upper surface of the porous sucker 2 is in contact with the silicon wafer 3, the lower surface of the porous sucker 2 is in contact with the vacuum cavity 12, and when the vacuum cavity 12 is vacuumized through the vacuum pipeline 4, negative pressure is generated through adsorption holes in the porous sucker 2, so that the silicon wafer 3 is firmly adsorbed on the porous sucker 2.
In some embodiments of the invention, the porous chuck 2 is a porous ceramic chuck, that is, the porous chuck 2 is made of a porous ceramic material, which is a porous ceramic material with open pore size and high open porosity, the porous sucking disc 2 has the advantages of high temperature resistance, high pressure resistance, acid, alkali and organic medium corrosion resistance, good biological inertia, controllable open pore structure, high open porosity, long service life, good product regeneration performance and the like, namely, the porous sucking disc 2 made of the porous ceramic material in the embodiment of the invention has good thermal shock resistance, the silicon wafer is not easy to deform after being heated, stable appearance can be ensured in the processing process, liquid can be quickly dispersed and discharged in the edge polishing process due to low and controllable fluid flow resistance, the retention time of the liquid on the porous sucker 2 is reduced, and the smoothness degree of the surface of the silicon wafer 3 is improved; in addition, the porous sucker 2 made of the porous ceramic material is also provided with a plurality of uniform and controllable air holes, the air holes are divided into open air holes (air holes communicated with the atmosphere in the ceramic matrix) and closed air holes (air holes not communicated with the atmosphere in the ceramic matrix), the open air holes can be used as adsorption holes to effectively adsorb the silicon wafer 3 and can also be used as channels of deionized water, the surface of the porous sucker 2 can be conveniently cleaned after grinding, and the closed air holes are favorable for blocking the transfer of heat, sound and the like.
In some embodiments of the invention, the porous suction cup 2 is a silicon carbide porous ceramic suction cup, that is, the porous ceramic for manufacturing the porous suction cup 2 is specifically a silicon carbide porous ceramic, the silicon carbide porous ceramic has good chemical stability, can resist acid and alkali corrosion, has high reuse rate, can be restored by back washing with gas or liquid after being used for a period of time, and reduces the production cost of silicon wafers.
In some embodiments of the present invention, the diameter of the silicon carbide porous ceramic chuck is 260mm to 270mm, and the thickness of the silicon carbide porous ceramic chuck is 0.8cm to 1.2cm, so that the silicon carbide porous ceramic chuck can have a sufficient adsorption area to contact with the surface of the silicon wafer 3, and meanwhile, the path of the air holes (i.e., adsorption holes) penetrating through the upper surface and the lower surface of the silicon carbide porous ceramic chuck is short, thereby achieving rapid vacuum pumping while ensuring the firmness of adsorption.
In other embodiments of the present invention, the open porosity of the silicon carbide porous ceramic chuck is 60 to 70%, the pore diameter of the pores of the silicon carbide porous ceramic chuck is between 50 μm and 100 μm, that is, the proportion of the open pores in the pores inside the silicon carbide porous ceramic chuck is 60 to 70% of the total number of the pores, and the pore diameter of the open pores is between 50 μm and 100 μm, so that the silicon carbide porous ceramic chuck can generate sufficient adsorption force through the open pores, and the silicon wafer 3 can be still firmly adsorbed on the silicon carbide porous ceramic chuck during the polishing process; and when the silicon wafer 3 is broken in the equipment in the polishing process and needs to be stopped for processing, the silicon wafer 3 still cannot leave an adsorption trace on the surface of the silicon wafer after being adsorbed for a long time due to the small pore diameter of the pores of the silicon carbide porous ceramic sucker, so that the problem that the adsorption trace is generated on the adsorption surface of the silicon wafer due to the long-time adsorption of the silicon wafer is solved, and the production yield of the silicon wafer is improved.
In the embodiment of the invention, the device further comprises a deionized water pipeline 5, the deionized water pipeline 5 is communicated with the vacuum cavity 12 and is used for injecting deionized water into the vacuum cavity 12, and when the vacuum cavity 12 is full of deionized water, the deionized water further flows to the upper surface of the porous suction cup 2 through the opening air hole of the porous suction cup 2, so that the surface of the porous suction cup 2 is convenient to clean.
In some embodiments of the present invention, the apparatus further includes a rotating shaft 6, the rotating shaft 6 is fixedly connected to the bottom of the base 1, and a central axis of the rotating shaft 6 is collinear with a central axis of the porous chuck 2, so that the rotating shaft 6 can drive the base 1 to rotate around an axis of the rotating shaft 6, and then drive the silicon wafer 3 adsorbed on the porous chuck 2 to rotate, thereby polishing an edge of the silicon wafer 3.
In other embodiments of the present invention, the vacuum pipeline 4 is disposed inside the rotating shaft 6, and the deionized water pipeline 5 is also disposed inside the rotating shaft 6, so as to reduce the space occupied by the vacuum pipeline 4 and the deionized water pipeline 5, and facilitate the arrangement of the pipelines.
In the embodiment of the invention, the device also comprises at least one cleaning nozzle 7, the water outlet of the cleaning nozzle 7 faces the lower surface of the silicon wafer 3 adsorbed above the porous sucker 2, the cleaning nozzle 7 is connected with a cleaning liquid pipeline 8 and is used for providing cleaning liquid for the cleaning nozzle 7, and heat generated by friction of the silicon wafer 3 and debris generated on the surface of the silicon wafer 3 can be timely washed away by using the cleaning nozzle 7; and when the silicon wafer is broken in the equipment in the polishing process and needs to be stopped for processing, the cleaning nozzle 7 can be used for spraying deionized water so as to ensure that the lower surface of the silicon wafer 3 is always in a wet state in the stopping process and prevent the lower surface of the silicon wafer 3 from being dried and imprinted due to too long stopping time.
According to the silicon wafer bearing device provided by the embodiment of the invention, the problem that adsorption traces are generated on the adsorption surface of the silicon wafer due to long-time adsorption of the silicon wafer can be solved, and the production yield of the silicon wafer is effectively improved.
In another aspect, an embodiment of the present invention further provides an edge polishing apparatus, including the silicon wafer carrying device described in any one of the above embodiments, where the silicon wafer carrying device in the above embodiments can solve the problem that an adsorption trace is generated on an adsorption surface of a silicon wafer due to long-time adsorption of the silicon wafer, and effectively improve the yield of silicon wafer production.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A silicon wafer bearing device is characterized by comprising:
the base is internally provided with a vacuum cavity, the upper surface of the base is provided with an annular flange, and an annular opening of the annular flange is communicated with the vacuum cavity;
the porous sucker is embedded in the annular opening of the annular flange, the porous sucker is provided with a plurality of adsorption holes penetrating through the upper surface and the lower surface of the porous sucker, and the porous sucker is used for adsorbing a silicon wafer;
and the vacuum pipeline is communicated with the vacuum cavity and is used for vacuumizing the vacuum cavity.
2. The silicon wafer carrier according to claim 1, wherein the porous chuck is a silicon carbide porous ceramic chuck.
3. The silicon wafer carrier device according to claim 2, wherein the diameter of the silicon carbide porous ceramic chuck is 260mm to 270mm, and the thickness of the silicon carbide porous ceramic chuck is 0.8cm to 1.2 cm.
4. The silicon wafer carrier device according to claim 2, wherein the open porosity of the SiC porous ceramic chuck is 60 to 70%.
5. The silicon wafer carrier device according to claim 2, wherein the pores of the SiC porous ceramic chuck have a diameter of 50 μm to 100 μm.
6. The silicon wafer carrier device of claim 1, further comprising:
and the deionized water pipeline is communicated with the vacuum cavity and is used for injecting deionized water into the vacuum cavity.
7. The silicon wafer carrier device of claim 1, further comprising:
the pivot, the pivot with the bottom fixed connection of base, the axis of pivot with the axis collineation of porous sucking disc, the pivot is used for the drive the base winds rotary motion is to the axis of pivot.
8. The silicon wafer carrier device according to claim 7, wherein the vacuum pipe is disposed inside the spindle.
9. The silicon wafer carrier device of claim 1, further comprising:
and the cleaning nozzle points to the lower surface of the silicon wafer adsorbed on the porous sucker and is connected with a cleaning liquid pipeline and used for providing cleaning liquid for the cleaning nozzle.
10. An edge polishing apparatus comprising the silicon wafer carrier according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010267836.3A CN111326473A (en) | 2020-04-08 | 2020-04-08 | Silicon wafer bearing device and edge polishing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010267836.3A CN111326473A (en) | 2020-04-08 | 2020-04-08 | Silicon wafer bearing device and edge polishing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111326473A true CN111326473A (en) | 2020-06-23 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010267836.3A Pending CN111326473A (en) | 2020-04-08 | 2020-04-08 | Silicon wafer bearing device and edge polishing equipment |
Country Status (1)
| Country | Link |
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| CN (1) | CN111326473A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112397601A (en) * | 2020-10-15 | 2021-02-23 | 浙江美尚光伏有限公司 | Solar cell module and production process thereof |
| CN114147569A (en) * | 2021-12-03 | 2022-03-08 | Tcl华星光电技术有限公司 | Side grinding device |
| TWI792697B (en) * | 2020-11-25 | 2023-02-11 | 韓商细美事有限公司 | Semiconductor strip sawing and sorting apparatus, transferring device and method thereof |
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| JPH0819927A (en) * | 1994-07-04 | 1996-01-23 | Kyocera Corp | Vacuum sucking device and its manufacture |
| US5996594A (en) * | 1994-11-30 | 1999-12-07 | Texas Instruments Incorporated | Post-chemical mechanical planarization clean-up process using post-polish scrubbing |
| JP2001307986A (en) * | 2000-04-24 | 2001-11-02 | Nippon Foundry Inc | Semiconductor substrate fixing/holding device |
| JP2005279844A (en) * | 2004-03-29 | 2005-10-13 | Kyocera Corp | Wafer suction plate and its manufacturing method |
| JP2009224402A (en) * | 2008-03-13 | 2009-10-01 | Taiheiyo Cement Corp | Vacuum suction device |
| CN101850537A (en) * | 2009-03-30 | 2010-10-06 | 谢鲜武 | Circular substrate polishing and cleaning device and method |
| CN209249434U (en) * | 2019-01-09 | 2019-08-13 | 长鑫存储技术有限公司 | A kind of backside of wafer marginal zone cleaning equipment |
-
2020
- 2020-04-08 CN CN202010267836.3A patent/CN111326473A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0819927A (en) * | 1994-07-04 | 1996-01-23 | Kyocera Corp | Vacuum sucking device and its manufacture |
| US5996594A (en) * | 1994-11-30 | 1999-12-07 | Texas Instruments Incorporated | Post-chemical mechanical planarization clean-up process using post-polish scrubbing |
| JP2001307986A (en) * | 2000-04-24 | 2001-11-02 | Nippon Foundry Inc | Semiconductor substrate fixing/holding device |
| JP2005279844A (en) * | 2004-03-29 | 2005-10-13 | Kyocera Corp | Wafer suction plate and its manufacturing method |
| JP2009224402A (en) * | 2008-03-13 | 2009-10-01 | Taiheiyo Cement Corp | Vacuum suction device |
| CN101850537A (en) * | 2009-03-30 | 2010-10-06 | 谢鲜武 | Circular substrate polishing and cleaning device and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112397601A (en) * | 2020-10-15 | 2021-02-23 | 浙江美尚光伏有限公司 | Solar cell module and production process thereof |
| CN112397601B (en) * | 2020-10-15 | 2022-06-21 | 浙江美尚光伏有限公司 | Solar cell module and production process thereof |
| TWI792697B (en) * | 2020-11-25 | 2023-02-11 | 韓商细美事有限公司 | Semiconductor strip sawing and sorting apparatus, transferring device and method thereof |
| CN114147569A (en) * | 2021-12-03 | 2022-03-08 | Tcl华星光电技术有限公司 | Side grinding device |
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Effective date of registration: 20211022 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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Application publication date: 20200623 |