CN111312574A - Plasma glow starting auxiliary device and method - Google Patents
Plasma glow starting auxiliary device and method Download PDFInfo
- Publication number
- CN111312574A CN111312574A CN201811510304.7A CN201811510304A CN111312574A CN 111312574 A CN111312574 A CN 111312574A CN 201811510304 A CN201811510304 A CN 201811510304A CN 111312574 A CN111312574 A CN 111312574A
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- plasma
- starting
- cavity
- auxiliary device
- observation window
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 230000001939 inductive effect Effects 0.000 claims abstract description 6
- 238000009616 inductively coupled plasma Methods 0.000 claims description 17
- 239000003574 free electron Substances 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 230000006698 induction Effects 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 claims 23
- 239000007858 starting material Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000026058 directional locomotion Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
Abstract
The invention discloses a plasma starting auxiliary device, comprising: the inductive coil is wound outside the insulating cylinder, and the inductive coil is connected with the radio frequency power supply through the matcher. The plasma glow starter can assist plasma glow starting under the condition of not changing the cavity pressure and the glow starting power of the main cavity, is convenient and efficient, and cannot influence the subsequent process.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a plasma starting auxiliary device and a plasma starting auxiliary method.
Background
The modern inductively coupled plasma etching process requires that the density and energy of plasma can be independently and precisely controlled, and particularly, the energy of the plasma can be reduced while the upper radio frequency coil of the inductively coupled plasma etching machine is required to excite high-density plasma. The requirement for the upper radio frequency coil of the inductively coupled plasma etcher is to increase the contribution of the magnetic field to the plasma as much as possible and to reduce the contribution of the electric field, i.e. to reduce the voltage on the coil. As a result, plasma ignition becomes more and more difficult, and the conventional solution is to increase the chamber pressure and ignition power in the ignition step and then to change the plasma ignition step to the normal process step. This ignition process results in an extended process time, and even worse, higher cavity pressure and ignition power affect the process result.
Disclosure of Invention
In order to solve the above problems, the present invention discloses a plasma starting assist device, comprising: the inductive coil is wound outside the insulating cylinder, and the inductive coil is connected with the radio frequency power supply through the matcher.
In the plasma glow starting assist device according to the present invention, preferably, the plasma glow starting assist device is used for an inductively coupled plasma etcher.
In the plasma starting auxiliary device of the present invention, preferably, the insulating cylinder is fitted over an observation window of the inductively coupled plasma etcher.
In the plasma starting auxiliary device of the present invention, preferably, the plasma starting auxiliary device further includes a dc electrode connected to the observation window chamber, and a negative voltage is applied to the dc electrode to collect ions with positive charges, so that the plasma in the observation window chamber exhibits electronegativity, and the electron diffusion probability is increased.
In the plasma starting assist device according to the present invention, preferably, the insulating tube is made of ceramic or quartz.
In the plasma starting assist device according to the present invention, it is preferable that the power of the rf power supply is three hundred watts or less.
In the plasma starting aid of the present invention, preferably, the length of the inductor coil is less than 1/4 of the rf wavelength loaded thereon.
A plasma starting auxiliary method is characterized in that when plasma is started, a radio frequency power supply of a plasma starting auxiliary device is started, a high electric field is generated in a cylinder type inductance coil, plasma is excited at low power, after the plasma is generated, free electrons diffuse and enter a main cavity through a grid mesh arranged between the main cavity and an observation window cavity, and the plasma starting of the excitation coil is assisted.
The invention also discloses a plasma glow starting auxiliary device which comprises a high-voltage pulse generator, wherein the high-voltage discharge end of the high-voltage pulse generator is arranged in the auxiliary cavity outside the observation window of the inductively coupled plasma etching machine.
A plasma starting auxiliary method is characterized in that when plasma is started, a high-voltage pulse generator is switched on and off once, process gas in a high-voltage ionization auxiliary cavity generates plasma, the plasma enters a main cavity through a grid mesh arranged between the main cavity and the auxiliary cavity, and the plasma starting of a coupling coil is assisted.
The plasma glow starter can assist plasma glow starting under the condition of not changing the cavity pressure and the glow starting power of the main cavity, is convenient and efficient, and cannot influence the subsequent process.
Drawings
FIG. 1 is a schematic view of the plasma ignition aid of the present invention mounted in an inductively coupled plasma etcher.
FIG. 2 is a schematic diagram of a high voltage pulse generator mounted in an inductively coupled plasma etcher.
Fig. 3 is a circuit schematic of a high voltage pulse generator.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly and completely understood, the technical solutions in the embodiments of the present invention will be described below with reference to the accompanying drawings in the embodiments of the present invention, and it should be understood that the specific embodiments described herein are only for explaining the present invention and are not intended to limit the present invention. The described embodiments are only some embodiments of the invention, not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "vertical", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Furthermore, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of the devices are described below in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details. Unless otherwise specified below, each part in the device may be formed of a material known to those skilled in the art, or a material having a similar function developed in the future may be used.
FIG. 1 is a schematic view of the plasma ignition aid of the present invention mounted in an inductively coupled plasma etcher. As shown in fig. 1, the plasma starting assist apparatus includes an insulating cylinder 3, an induction coil 8, a radio frequency power supply 5, and a matcher 4. The inductance coil 8 is wound outside the insulation cylinder 3 to form a cylinder-shaped inductance coil. The inductance coil 8 is connected with the radio frequency power supply 5 through the matcher 4. The insulating cylinder 3 is sleeved on an observation window 2 of a main chamber 1 of the induction coupling plasma etching machine. The insulating cylinder 3 is made of ceramic or quartz. The power of the radio frequency power supply 5 is below three hundred watts. The length of the inductor 8 is less than 1/4 of the rf wavelength loaded thereon.
When plasma in a cavity of an Inductively Coupled Plasma (ICP) etcher is ignited, high power is often required to generate high voltage on the exciting coil 7, drive and accelerate free electrons to generate directional motion, collide with neutral gas molecules, excite gas ionization, and form plasma. After the plasma is ignited, the alternating magnetic field generated by the current on the inductance coil 7 drives the free electrons to move in the chamber along the direction of the vertical magnetic field, so that more free electrons are collided, and a stable plasma discharge state is formed. However, in the low-pressure and electronegative gas process, the free electrons in the chamber are very few, and the exciting coil 7 needs a very high electric field to ionize the gas, so that the system is very sensitive, the starting is difficult to stabilize, and the repeatability is not good.
In the invention, the plasma glow starting auxiliary device arranged outside the observation window 2 of the main chamber of the ICP etcher can generate free electrons for assisting the plasma glow starting of the main chamber 1. The plasma starting auxiliary device uses the cylinder-shaped inductance coil 8 to excite the plasma, and because the volume of the plasma starting auxiliary device is small, the electric field is inversely proportional to the distance, the electric field in the small cylinder-shaped cavity is very high, and the plasma can be excited with very low power. After plasma is generated, free electrons diffuse through a grid arranged between the main chamber 1 and the observation window 2 chamber and enter the main chamber 1, and under the driving of the exciting coil 7, energy is obtained, and more molecules are excited to be ionized.
In order to increase the efficiency of the free electrons diffusing into the main chamber 1, it is preferable that the plasma starting auxiliary device further includes a dc electrode, as shown in fig. 1, connected into the observation window chamber, and a negative voltage is applied to the dc electrode through a dc power supply 6 for collecting ions with positive charges, so that the plasma in the observation window chamber exhibits electronegativity, and the probability of electron diffusion is increased.
When the plasma starting assist device is used to assist plasma starting, first, a radio frequency power supply of the inductively coupled plasma etcher is turned on, and a radio frequency voltage is applied to the exciting coil 7. Meanwhile, a radio frequency power supply 5 of the plasma starting auxiliary device is started, a high electric field is generated in the cylindrical inductance coil 8, plasma is excited at low power, after the plasma is generated, free electrons diffuse into the main chamber 1 through a grid mesh arranged between the main chamber 1 and the chamber of the observation window 2, and the plasma starting of the auxiliary exciting coil 7 is realized.
The invention also discloses another plasma starting auxiliary device which comprises a high-voltage pulse generator 9. As shown in fig. 2, the high voltage discharge end of the high voltage pulse generator 9 is mounted in the sub-chamber outside the observation window of the inductively coupled plasma etcher. When the exciting coil 7 of the main chamber 1 of the inductively coupled plasma etcher is ignited, the high voltage pulse generator 9 is switched on and off once, and the secondary coil T1 of the transformer instantaneously generates high voltage (as shown in fig. 3), thereby ionizing the process gas to generate plasma. The plasma diffuses into the main chamber 1 through the grid mesh arranged between the main chamber and the auxiliary chamber, and obtains energy under the drive of the exciting coil 7 to excite more molecules to ionize.
The plasma starting auxiliary device can assist plasma starting under the condition of not changing the cavity pressure and the starting power of the main cavity, is convenient and efficient, and cannot influence the subsequent process.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Claims (10)
1. A plasma starting auxiliary device is characterized in that,
the method comprises the following steps: the inductive coil is wound outside the insulating cylinder, and the inductive coil is connected with the radio frequency power supply through the matcher.
2. A plasma starting auxiliary device is characterized in that,
the plasma starting auxiliary device is used for an inductively coupled plasma etching machine.
3. The plasma ignition aid of claim 2,
the insulating cylinder is sleeved on an observation window of the inductively coupled plasma etching machine.
4. The plasma ignition aid of claim 3,
the plasma collecting device is characterized by further comprising a direct current electrode, wherein the direct current electrode is connected into the observation window cavity, negative voltage is introduced to the direct current electrode and is used for collecting ions with positive charges, the plasmas in the observation window cavity are made to be electronegative, and the electron diffusion probability is increased.
5. The plasma ignition aid of claim 1,
the insulating cylinder is made of ceramic or quartz.
6. The plasma ignition aid of claim 1,
the power of the radio frequency power supply is below three hundred watts.
7. The plasma ignition aid of claim 1,
the length of the induction coil is less than 1/4 of the radio frequency wavelength loaded on the induction coil.
8. A plasma glow starting assist method is characterized in that,
when plasma is started, a radio frequency power supply of the plasma starting auxiliary device is started, a high electric field is generated in the cylindrical inductance coil, plasma is excited at low power, and after the plasma is generated, free electrons diffuse into the main cavity through a grid mesh arranged between the main cavity and the observation window cavity to assist in starting plasma of the exciting coil.
9. A plasma starting auxiliary device is characterized in that,
the high-voltage pulse etching device comprises a high-voltage pulse generator, wherein a high-voltage discharge end of the high-voltage pulse generator is arranged in an auxiliary cavity outside an observation window of the inductively coupled plasma etching machine.
10. A plasma starting assist method using the plasma starting assist apparatus according to claim 9,
when plasma is started, the high-voltage pulse generator is switched on and off once, the process gas in the auxiliary cavity is ionized by high voltage to generate plasma, the plasma enters the main cavity through the grid mesh arranged between the main cavity and the auxiliary cavity, and the plasma is started by the auxiliary exciting coil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811510304.7A CN111312574A (en) | 2018-12-11 | 2018-12-11 | Plasma glow starting auxiliary device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811510304.7A CN111312574A (en) | 2018-12-11 | 2018-12-11 | Plasma glow starting auxiliary device and method |
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| Publication Number | Publication Date |
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| CN111312574A true CN111312574A (en) | 2020-06-19 |
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|---|---|---|---|
| CN201811510304.7A Pending CN111312574A (en) | 2018-12-11 | 2018-12-11 | Plasma glow starting auxiliary device and method |
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| CN (1) | CN111312574A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5107170A (en) * | 1988-10-18 | 1992-04-21 | Nissin Electric Co., Ltd. | Ion source having auxillary ion chamber |
| US5468296A (en) * | 1993-12-17 | 1995-11-21 | Lsi Logic Corporation | Apparatus for igniting low pressure inductively coupled plasma |
| CN106298422A (en) * | 2015-06-29 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing equipment |
| CN108575042A (en) * | 2017-03-09 | 2018-09-25 | 北京北方华创微电子装备有限公司 | A kind of coil, medium cylinder and plasma chamber |
| CN108668423A (en) * | 2017-03-31 | 2018-10-16 | 北京北方华创微电子装备有限公司 | Plasma processing device and pre-cleaning processes |
-
2018
- 2018-12-11 CN CN201811510304.7A patent/CN111312574A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5107170A (en) * | 1988-10-18 | 1992-04-21 | Nissin Electric Co., Ltd. | Ion source having auxillary ion chamber |
| US5468296A (en) * | 1993-12-17 | 1995-11-21 | Lsi Logic Corporation | Apparatus for igniting low pressure inductively coupled plasma |
| CN106298422A (en) * | 2015-06-29 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing equipment |
| CN108575042A (en) * | 2017-03-09 | 2018-09-25 | 北京北方华创微电子装备有限公司 | A kind of coil, medium cylinder and plasma chamber |
| CN108668423A (en) * | 2017-03-31 | 2018-10-16 | 北京北方华创微电子装备有限公司 | Plasma processing device and pre-cleaning processes |
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Application publication date: 20200619 |