CN111308853B - Mask plate - Google Patents

Mask plate Download PDF

Info

Publication number
CN111308853B
CN111308853B CN202010130655.6A CN202010130655A CN111308853B CN 111308853 B CN111308853 B CN 111308853B CN 202010130655 A CN202010130655 A CN 202010130655A CN 111308853 B CN111308853 B CN 111308853B
Authority
CN
China
Prior art keywords
area
pattern
exposed
hollowed
dial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010130655.6A
Other languages
Chinese (zh)
Other versions
CN111308853A (en
Inventor
傅伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hefei Visionox Technology Co Ltd
Original Assignee
Hefei Visionox Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hefei Visionox Technology Co Ltd filed Critical Hefei Visionox Technology Co Ltd
Priority to CN202010130655.6A priority Critical patent/CN111308853B/en
Publication of CN111308853A publication Critical patent/CN111308853A/en
Application granted granted Critical
Publication of CN111308853B publication Critical patent/CN111308853B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42Alignment or registration features, e.g. alignment marks on the mask substrates

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The application relates to a mask, mask main part interval is provided with first figure region and second figure region. And splicing and exposing the mask body in the area to be exposed to form two adjacent exposure units. And the first pattern area is formed in the first pattern to be exposed. And exposing the second pattern area in the area to be exposed to form a second pattern. And under the condition of no splicing exposure error, the position relationship of the first pattern and the second pattern is in a standard state. When the splicing exposure of the two exposure units is in error, the deflection angle of the splicing positions of the two exposure units can be obtained according to the angle deviation of the first pattern and the second pattern relative to the standard state, and then the exposure equipment or the mask plate can be adjusted according to the angle deviation, so that the accuracy of the pattern of the area to be exposed is further improved.

Description

Mask plate
Technical Field
The present application relates to the field of photolithography, and in particular, to a reticle.
Background
Because of the limitation of the exposure machine on the mask size, the mask is usually adopted to form a large-area pattern by splicing the mask among a plurality of exposure areas. Along with the continuous improvement of display resolution, the accuracy requirement of mask stitching is higher and higher, so that the accuracy measurement of mask stitching is very important. The existing mask plate can measure the offset in the left-right up-down direction among different exposure areas after exposure, but cannot measure the rotation offset.
Disclosure of Invention
Based on the above, it is necessary to provide a mask for solving the problem that the existing mask can measure the offset in the left-right-up-down direction between different exposure areas after exposure, but cannot measure the rotational offset.
A reticle, comprising:
the mask body is provided with a first pattern area and a second pattern area at intervals, the mask body is spliced and exposed in the area to be exposed to form two adjacent exposure units, the first pattern area is exposed in the area to be exposed to form a first pattern, the second pattern area is exposed in the area to be exposed to form a second pattern, and the angle of deflection of the splicing positions of the two exposure units is obtained through the angle deviation of the first pattern and the second pattern relative to the standard state.
In one embodiment, the first graphic area comprises a dial, and the first pattern comprises a dial graphic formed by exposing the dial in the area to be exposed;
the second pattern area comprises an indication part, the second pattern comprises an indication pattern formed by the indication part in the area to be exposed, and after the mask body is spliced and exposed in the area to be exposed, the angle indicated by the indication pattern in the dial pattern represents the deflection angle of the splicing positions of the two exposure units.
In one embodiment, the first graphic region includes a first rectangular hollowed-out area, the dial is disposed in the first rectangular hollowed-out area, and a center of the dial coincides with a center of the first rectangular hollowed-out area.
In one embodiment, the first graphic area further includes a fixed connection portion, and two ends of the fixed connection portion are respectively connected with an edge of the rectangular hollowed-out area and the dial plate.
In one embodiment, a plurality of first scale slots are arranged at intervals on the periphery of the dial plate.
In one embodiment, the indicator comprises a cross-hollowed-out area.
In one embodiment, the cross hollow area is a central symmetrical graph, and comprises transverse hollow slits and vertical hollow slits which are arranged in a crossing manner, wherein the length of the transverse hollow slits and the length of the vertical hollow slits are not smaller than the diameter of the dial plate.
In one embodiment, the dial plate includes a plurality of circumferentially arranged second scale slots;
the second graphic area comprises a second rectangular hollow area, the indication part comprises a cross shielding strip, and the cross shielding strip is arranged in the second rectangular hollow area.
In one embodiment, the cross shielding strip comprises a transverse shielding strip and a vertical shielding strip which are arranged in a crossing manner, two ends of the transverse shielding strip are respectively connected with two opposite sides of the second rectangular hollow area, and two ends of the vertical shielding strip are respectively connected with two opposite sides of the second rectangular hollow area.
In one embodiment, the diameter of the dial is not less than the diagonal length of the second rectangular hollow-out area.
The embodiment of the application provides a mask, the mask main body interval is provided with a first graph area and a second graph area. And splicing and exposing the mask body in the area to be exposed to form two adjacent exposure units. And the first pattern area is formed in the first pattern to be exposed. And exposing the second pattern area in the area to be exposed to form a second pattern. And under the condition of no splicing error, the position relationship of the first pattern and the second pattern is in a standard state. When errors occur in the splicing of the two exposure units, the deflection angle of the splicing positions of the two exposure units can be obtained according to the angle deviation of the first pattern and the second pattern relative to the standard state, and then the exposure equipment or the mask plate can be adjusted according to the angle deviation, so that the accuracy of the pattern of the area to be exposed is further improved.
Drawings
FIG. 1 is a schematic diagram of a mask operation according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a mask operation according to an embodiment of the present disclosure;
FIG. 3 is a schematic view of a post-exposure first pattern and a second pattern stitching provided in one embodiment of the present application;
FIG. 4 is a schematic diagram of a mask provided in an embodiment of the present application;
FIG. 5 is a schematic diagram of a mask provided in an embodiment of the present application;
FIG. 6 is a schematic diagram of a mask provided in an embodiment of the present application;
fig. 7 is a schematic diagram of a mask provided in an embodiment of the present application.
Reference numerals illustrate:
mask plate 10
Mask body 100
First graphic region 110
First rectangular hollowed-out area 120
Second rectangular hollowed-out area 130
Dial 131
First scale slit 132
Second scale slit 134
Fixed connection 140
Second graphic region 150
Indication part 160
Cross hollowed-out area 170
Transverse hollow seam 172
Vertical hollow slit 174
Cross shielding strip 180
Transverse barrier strip 182
Vertical barrier strip 184
First pattern 192
Second pattern 194
The region 112 to be exposed
Exposure unit 113
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail below by way of examples with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
The numbering of the components itself, e.g. "first", "second", etc., is used herein merely to distinguish between the described objects and does not have any sequential or technical meaning. The terms "coupled" and "connected," as used herein, are intended to encompass both direct and indirect coupling (coupling), unless otherwise indicated. In the description of the present application, it should be understood that the terms "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," etc. indicate or refer to an orientation or positional relationship based on that shown in the drawings, merely for convenience of description and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
In this application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
Referring to fig. 1, an embodiment of the present application provides a mask 10. The reticle 10 includes a reticle body 100. The mask body 100 is provided with a first pattern area 110 and a second pattern area 150 at intervals. The mask body 100 is spliced and exposed in the region to be exposed 112 to form two adjacent exposure units 113. The first pattern 192 formed in the region 112 to be exposed by the first pattern region 110. The second pattern area 150 exposes the second pattern 194 formed in the area to be exposed 112. And obtaining the deflection angle of the splicing position of the mask body 100 through the angle deviation of the first pattern 192 and the second pattern 194 relative to the standard state.
The mask body 100 may have a plate-like structure. The mask body 100 may be made of metal, polyester, or the like. The mask 10 may be provided with different hollowed-out patterns according to the pattern requirements of the region 112 to be exposed. The first graphic region 110 and the second graphic region 150 may be disposed at two sides of the mask body 100, respectively. The first graphic region 110 and the second graphic region 150 may be patterns formed by hollowing.
The region to be exposed 112 may be divided into a plurality of sub-regions. The shape and size of the sub-regions may be matched to the reticle 10. The mask 10 may be disposed above the to-be-exposed area 112, and then the corresponding sub-areas are exposed for the first time by an exposure machine, so as to form a corresponding exposure unit 113 in each sub-area. The first pattern 192 corresponding to the first graphic region 110 may be formed between adjacent two of the sub-regions. And then the mask plate 10 can be translated, and the adjacent sub-regions are subjected to secondary exposure to form the exposure unit 113. The second pattern 194 may be formed between the two exposing units 113. The second pattern 194 may be spaced apart from the first pattern 192, or may partially or entirely overlap with the first pattern 192. The standard state is the corresponding state of the first pattern 192 and the second pattern 194 in an ideal state without error. If there is a relative rotation during the exposure of the mask 10, the angular relationship between the first pattern 192 and the second pattern 194 will have a corresponding error with respect to the standard state. The angle of the adjacent two exposure units 113 at which the splice position is deflected can be obtained by the angular relationship of the first pattern 192 and the second pattern 194. Therefore, the exposure equipment or the mask 10 can be adjusted according to the deflection angle, so that the accuracy of the pattern of the region 112 to be exposed is further improved.
In one embodiment, the first graphic region 110 may be provided with a reference pattern. The second image area may be provided with a matching pattern. In the ideal stitching state, after two exposures, the reference pattern and the matching pattern may be completely overlapped, or may be partially overlapped, or a pattern having a certain corresponding position may be formed between the two exposure units 113. When the matching pattern and the reference pattern do not coincide or correspond to each other in the to-be-exposed area 112 according to the standard state, it is indicated that the exposure unit 113 is spliced to have a deviation. The angle of rotation at the time of the stitching of the exposure unit 113 can be determined by the angular deviation of the reference pattern and the non-overlapping portion of the standard pattern. Alternatively, the angle of the splice rotation of the exposure unit 113 may be determined by measuring the deviation of the matching pattern and the reference pattern with respect to the corresponding position. The reference pattern or the standard pattern may also be provided with scale marks. The rotation angle of the mask 10 during splicing can be directly read through the scale marks.
In the mask 10 provided in this embodiment, the mask body 100 is provided with a first graphic region 110 and a second graphic region 150 at intervals. The mask body 100 is spliced and exposed in the region to be exposed 112 to form two adjacent exposure units 113. The first pattern 192 formed in the region 112 to be exposed by the first pattern region 110. The second pattern area 150 exposes the second pattern 194 formed in the area to be exposed 112. In the case of no stitching error, the positional relationship between the first pattern 192 and the second pattern 194 is in a standard state. When an error occurs in the stitching of the two exposure units 113, the angle of deflection of the stitching positions of the two exposure units 113 can be obtained according to the angle deviation of the first pattern 192 and the second pattern 194 relative to the standard state, and then the exposure device or the mask 10 can be adjusted according to the angle deviation, so that the accuracy of the pattern of the region 112 to be exposed is further improved.
Referring to fig. 2, in one embodiment, the first graphical area 110 includes a dial 131. The first pattern 192 includes a dial pattern formed by exposing the dial 131 to the area 112 to be exposed. The dial 131 may have a circular structure. The second graphic region 150 includes an indication portion 160. The second pattern 194 includes an indication pattern formed by the indication part 160 in the region 112 to be exposed. After the mask body 100 is spliced and exposed in the area to be exposed 112, the angle indicated by the indication graph on the dial graph represents the deflection angle of the splicing position of the exposure unit 113. The dial 131 may have a circular plate-like structure formed in the first graphic region 110. The periphery of the dial 131 may have a hollowed scale. The edges of the dial 131 may also be hollowed out to show the outline of the dial 131. Therefore, when exposing at the area to be exposed 112, the dial pattern may be formed at the splice area of the adjacent exposure units 113. The indication part 160 may have an indication function and may be used as a pointer in the dial 131. That is, the angle of the splice deflection of the mask body 100 may be reflected by the scale indicated by the indication part 160 in the dial 131 image. The indication part 160 may be formed of a hollowed-out portion formed at the second graphic region 150. At the time of the second exposure, the indication pattern may be formed by exposing a portion of the area to be exposed 112, which is blocked by the dial 131, through the indication portion 160.
Referring to fig. 2 and 3, after exposing the mask 10, a dial pattern formed by the dial 131 and the indication portion 160 form an indication pattern in the dial 131 between the two adjacent exposure units 113. The angle of the spliced deflection of the exposure unit 113 can be read out through the angle indicated by the indication part 160 on the dial 131, so that the method is convenient and quick.
In one embodiment, the first graphic region 110 includes a first rectangular hollowed-out region 120. The dial 131 is disposed in the first rectangular hollow area 120. The center of the dial 131 coincides with the center of the first rectangular hollow area 120. It will be appreciated that the currently common inspection equipment is typically a pattern pitch tester and a critical line width tester, both of which are equipment for measuring width and length. Therefore, when the first exposure is performed, the first rectangular hollowed-out area 120 forms a rectangular area in the area to be exposed 112, and the size of the rectangular area can be measured by the detection device, so that the center of the rectangular area can be determined. When the second exposure is performed, the center of the indication pattern can be obtained. In the standard state, the center of the indication graph may coincide with the center of the indication graph, i.e., the center of the indication graph coincides with the center of the rectangular region. By measuring the distance between the center of the rectangular area and the center of the indication pattern, both the horizontal deviation and the vertical deviation of the splice of the two exposure units 113 can be obtained. The positions of the two exposure units 113 in the horizontal and vertical directions can be further adjusted to improve the accuracy of the pattern formed in the region to be exposed 112.
Referring to fig. 4, in one embodiment, the first graphic region 110 further includes a fixed connection 140. Two ends of the fixed connection part 140 are respectively connected with the edge of the rectangular hollow area and the dial 131. The fixing connection portion 140 may be used to fix the dial 131 in the rectangular hollow area and parallel to the surface of the mask body 100. The fixing connection part 140 may have a bar-shaped structure. The number of the fixing connection parts 140 may be plural. The fixed connection parts 140 may be connected between the dial 131 and the mask body 100 at equal intervals, so that the edges of the dial 131 are ensured to be uniformly stressed, and deformation of the dial 131 is avoided.
In one embodiment, a plurality of first scale slits 132 are arranged at intervals on the periphery of the dial 131. The plurality of first scale slits 132 may constitute scales of the dial 131, through which the deflection angle of the exposure unit 113 may be read out.
In one embodiment, the first graduation slit 132 can have a width of 0.5 microns to 1 micron. The lengths of the first scale slots 132 may be different, for example, the lengths of two adjacent first scale slots 132 may be different, and in an embodiment, an extension line of the center line of the first scale slots 132 may pass through the center of the dial 131, so as to facilitate accuracy.
In one embodiment, the indicator 160 includes a cross-hollowed-out area 170. The cross-hollowed-out area 170 may have four ends. After exposing the cross-hollowed-out area 170, the patterns corresponding to the four ends can point to the scale positions of the dial 131 in the area to be exposed, so that the deflection angle of the exposure unit 113 can be reflected. The cross hollowed-out area 170 is simple to manufacture and clear to indicate. The central position of the pattern corresponding to the cross hollowed-out area 170 can be determined by measuring the size of the pattern formed by the cross hollowed-out area 170 after exposure through the pattern interval tester or the key line width tester, and the method is simple and convenient.
Referring to fig. 5 and 6, in an embodiment, the indication portion 160 may further include a triangular or diamond-shaped hollowed-out area, as long as the hollowed-out area corresponding to the indication portion 160 has a scale with an end portion capable of indicating the dial 131.
In one embodiment, the cross-hollowed-out area 170 is a center-symmetrical pattern. The cross-hollowed out area 170 includes a transverse hollowed out seam 172 and a vertical hollowed out seam 174 that are disposed in a crossing manner. The length of the horizontal hollow gap 172 and the length of the vertical hollow gap 174 are not smaller than the diameter of the dial 131. It can be appreciated that, by measuring the distance between the two ends of the horizontal hollow gap 172 and the distance between the two ends of the vertical hollow gap 174 by the pattern pitch tester or the critical line width tester, the center of the cross hollow gap 170 can be determined, and similarly, the center of the pattern formed in the region to be exposed after the exposure of the cross hollow gap 170 can be determined. The deviation of the exposure unit 113 in the horizontal and vertical directions can be further determined by the relative positions of the center and the center of the rectangular region.
In one embodiment, the length of the horizontal and vertical hollow slits 172, 174 are equal and are each between 8 microns and 12 microns. The dial 131 may have a diameter of 10 microns to 20 microns.
The center of the cross-hollowed out area 170 is located at the center of the transverse hollowed out seam 172 and at the center of the vertical hollowed out seam 174. The length of horizontal hollow seam 172 with the length of vertical hollow seam 174 is greater than or equal to dial plate 131's diameter, after exposing, horizontal hollow seam 172 with the figure that the both ends of vertical hollow seam 174 formed can extend even contact dial plate figure first scale seam 132, more be convenient for the reading, reduce visual error.
Referring to fig. 7, in one embodiment, the dial 131 includes a plurality of circumferentially arranged second scale slots 134. That is, the plurality of second scale slits 134 arranged circumferentially form both the outline of the dial 131 and the scale of the dial 131. The second graphical region 150 includes a second rectangular hollowed-out region 130. The indication portion 160 includes a cross shielding bar 180. The cross shielding bar 180 is disposed in the second rectangular hollow area 130. The second rectangular hollowed-out area 130 may be square. The cross-shaped barrier 180 may be a center symmetrical pattern. When the exposure unit 113 is exposed and spliced, in a standard state, the rectangular area formed by exposing the second rectangular hollowed-out area 130 and the center of the cross shielding strip 180 may coincide. The pattern formed by exposing the cross barrier 180 can be used as a pointer. The scale indicated by the pointer on the dial graph is the angle which can be spliced and deflected for the exposure unit 113.
In one embodiment, the cross barrier 180 includes a transverse barrier 182 and a vertical barrier 184 disposed crosswise. Both ends of the lateral shielding bar 182 are respectively connected to two opposite sides of the second rectangular hollow-out area 130. Two ends of the vertical shielding bar 184 are respectively connected to two opposite sides of the second rectangular hollow-out area 130. Namely, the second rectangular hollow-out area 130 and the cross shielding strips 180 form a grid structure. The field lattice is simple in structure, and the horizontal shielding bars 182 and the vertical shielding bars 184 can be fixed in the second rectangular hollow-out area 130. When the area of the second rectangular hollow area 130 is unchanged, the lengths of the lateral shielding bars 182 and the vertical shielding bars 184 may reach the maximum, so that the graph formed by the lateral shielding bars 182 and the vertical shielding bars 184 after exposure is closer to the graph corresponding to the scale of the dial 131, and the degree is quicker and more accurate.
In one embodiment, the diameter of the dial 131 is not less than the diagonal length of the second rectangular hollowed-out area 130. Therefore, after exposure, the images corresponding to the second rectangular hollowed-out area 130 and the cross shielding strip 180 completely fall into the dial pattern corresponding to the dial 131, so that the integrity of the dial pattern can be ensured. It is possible to avoid the dial pattern being exposed to a missing state when the second rectangular hollow-out area 130 is exposed for the second time because the diameter of the dial pattern is smaller than the diagonal length of the second rectangular hollow-out area 130.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the patent. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.

Claims (8)

1. A reticle, comprising:
a mask body (100) is provided with a first graph area (110) and a second graph area (150) at intervals, the mask body (100) is spliced and exposed in an area (112) to be exposed to form two adjacent exposure units (113), the first graph area (110) is exposed in the area (112) to be exposed to form a first pattern (192), and the second graph area (150) is exposed in the area (112) to be exposed to form a second pattern (194);
wherein the first graphic region (110) comprises a dial plate (131), and the first pattern (192) comprises a dial plate graphic formed by exposing the dial plate (131) in the region (112) to be exposed; the second pattern area (150) comprises an indication part (160), the second pattern (194) comprises an indication pattern formed by the indication part (160) in the area (112) to be exposed, and after the mask body (100) is spliced and exposed in the area (112) to be exposed, the angle indicated by the indication pattern in the dial pattern represents the deflection angle of the splicing positions of the two exposure units (113);
the first graphic area (110) comprises a first rectangular hollow area (120), the dial plate (131) is arranged in the first rectangular hollow area (120), and the center of the dial plate (131) coincides with the center of the first rectangular hollow area (120);
the first graphic area (110) further comprises a fixed connection part (140), and two ends of the fixed connection part (140) are respectively connected with the edge of the rectangular hollowed-out area and the dial plate (131).
2. The mask according to claim 1, wherein a plurality of first scale slits (132) are provided at intervals on the periphery of the dial plate (131).
3. The reticle of claim 1, wherein the indicator portion (160) comprises a cross-hollowed-out area (170).
4. A reticle as claimed in claim 3 wherein the cross-hollowed-out area (170) is a centrosymmetric pattern comprising cross-arranged transverse hollowed-out slits (172) and vertical hollowed-out slits (174), the length of the transverse hollowed-out slits (172) and the length of the vertical hollowed-out slits (174) being not less than the diameter of the dial (131).
5. The reticle of claim 1, wherein the dial (131) comprises a plurality of circumferentially arranged second scale slots (134);
the second graphic region (150) comprises a second rectangular hollow-out region (130), the indication part (160) comprises a cross shielding strip (180), and the cross shielding strip (180) is arranged in the second rectangular hollow-out region (130).
6. The mask plate according to claim 5, wherein the cross shielding strip (180) comprises a transverse shielding strip (182) and a vertical shielding strip (184) which are arranged in a crossing manner, two ends of the transverse shielding strip (182) are respectively connected with two opposite sides of the second rectangular hollow-out area (130), and two ends of the vertical shielding strip (184) are respectively connected with two opposite sides of the second rectangular hollow-out area (130).
7. The reticle of claim 5, wherein the diameter of the dial (131) is not less than the diagonal length of the second rectangular hollowed-out area (130).
8. The reticle of claim 4 wherein the length of the transverse hollowed-out seam (172) and the length of the vertical hollowed-out seam (174) are equal.
CN202010130655.6A 2020-02-28 2020-02-28 Mask plate Active CN111308853B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010130655.6A CN111308853B (en) 2020-02-28 2020-02-28 Mask plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010130655.6A CN111308853B (en) 2020-02-28 2020-02-28 Mask plate

Publications (2)

Publication Number Publication Date
CN111308853A CN111308853A (en) 2020-06-19
CN111308853B true CN111308853B (en) 2023-07-04

Family

ID=71151888

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010130655.6A Active CN111308853B (en) 2020-02-28 2020-02-28 Mask plate

Country Status (1)

Country Link
CN (1) CN111308853B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012054302A (en) * 2010-08-31 2012-03-15 V Technology Co Ltd Exposure method and exposure device
CN102955366A (en) * 2011-08-22 2013-03-06 上海微电子装备有限公司 Projection exposure device and splicing method
CN103412468A (en) * 2013-08-27 2013-11-27 中国电子科技集团公司第四十四研究所 Splicing exposing method for photo-etched large-size CCD (Charge Coupled Device) chip
CN103605263A (en) * 2013-09-17 2014-02-26 京东方科技集团股份有限公司 Method and masks for detecting splicing exposure error of color film substrate
CN104391431A (en) * 2014-12-12 2015-03-04 合肥京东方光电科技有限公司 Exposure development method and system and exposure control system
CN110750031A (en) * 2018-07-23 2020-02-04 上海微电子装备(集团)股份有限公司 Spliced mask, exposure device and exposure method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012054302A (en) * 2010-08-31 2012-03-15 V Technology Co Ltd Exposure method and exposure device
CN102955366A (en) * 2011-08-22 2013-03-06 上海微电子装备有限公司 Projection exposure device and splicing method
CN103412468A (en) * 2013-08-27 2013-11-27 中国电子科技集团公司第四十四研究所 Splicing exposing method for photo-etched large-size CCD (Charge Coupled Device) chip
CN103605263A (en) * 2013-09-17 2014-02-26 京东方科技集团股份有限公司 Method and masks for detecting splicing exposure error of color film substrate
CN104391431A (en) * 2014-12-12 2015-03-04 合肥京东方光电科技有限公司 Exposure development method and system and exposure control system
CN110750031A (en) * 2018-07-23 2020-02-04 上海微电子装备(集团)股份有限公司 Spliced mask, exposure device and exposure method

Also Published As

Publication number Publication date
CN111308853A (en) 2020-06-19

Similar Documents

Publication Publication Date Title
JP2539163B2 (en) Optical focus test mask and monitoring system and method
US4538105A (en) Overlay test wafer
JP4667559B2 (en) Semiconductor device, photomask, and method of manufacturing semiconductor device
US4074131A (en) Apparatus for measuring or setting two-dimensional position coordinates
JP2988393B2 (en) Exposure method
DE4033556A1 (en) MEASURING ARRANGEMENT FOR X, Y, (PHI) COORDINATE TABLES
CN112420674B (en) Overlay alignment mark and overlay error measuring method
CN112230514B (en) Overlay error measurement mark structure, manufacturing method thereof and overlay error measurement method
EP0997782A1 (en) Reticle having mark for detecting alignment and method for detected alignment
CN112631090A (en) Overlay mark and overlay error testing method
CN111308853B (en) Mask plate
TWI501049B (en) Method and device for measuring the relative local position error of one of the sections of an object that is exposed section by section
US4606643A (en) Fine alignment system
KR100392744B1 (en) Semiconductor device and manufacturing method thereof, and registration accuracy measurement enhancement method
US4566192A (en) Critical dimension measurement structure
WO2023284037A1 (en) Measurement mark, measurement layout, and measurement method
CN117434787A (en) Design layout, mask and measuring method
US6636312B1 (en) Multi-pitch vernier for checking alignment accuracy
JP2011061236A (en) Semiconductor device
US20230017392A1 (en) Measurement mark, measurement layout, and measurement method
CN112838017A (en) Photoetching pattern detection method and system
CN216795354U (en) Display device
WO2004090980A2 (en) Overlay metrology mark
JPH06109588A (en) Inspecting method for distortion of projection optical system
US6579650B2 (en) Method and apparatus for determining photoresist pattern linearity

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant