CN111299810A - Laser processing method and device - Google Patents
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- CN111299810A CN111299810A CN202010113641.3A CN202010113641A CN111299810A CN 111299810 A CN111299810 A CN 111299810A CN 202010113641 A CN202010113641 A CN 202010113641A CN 111299810 A CN111299810 A CN 111299810A
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Abstract
The invention discloses a laser processing method and laser processing equipment, and relates to the technical field of laser processing, so that proper laser processing parameters can be determined during laser processing, and the laser processing quality is improved. The laser processing method is applied to a laser processing substrate, the substrate contains at least one characteristic phase, and the laser processing method comprises the following steps: determining laser processing parameter constraint conditions of at least one characteristic phase according to the processing target information; obtaining laser processing parameters from a preset corresponding relation of at least one characteristic phase according to laser processing parameter constraint conditions; the preset corresponding relation of each characteristic phase comprises the relative relation of a plurality of laser processing parameters; and the laser processing equipment processes the substrate according to the laser processing parameters. The invention provides a laser processing method and equipment for laser processing.
Description
Technical Field
The invention relates to the technical field of laser processing, in particular to a laser processing method and laser processing equipment.
Background
Laser processing refers to the processing of materials by means of photothermal effect, wherein the focused energy of light has high energy density at the focus.
When a laser processing strategy is formulated, the improper selection of laser processing parameters can cause poor laser processing quality and even cause processing defects.
Disclosure of Invention
The invention aims to provide a laser processing method and equipment, so that during laser processing, appropriate laser processing parameters can be determined, and the laser processing quality is improved.
In order to achieve the above object, the present invention provides a laser processing method. The laser processing method is applied to laser processing of a substrate, wherein the substrate contains at least one characteristic phase, and the laser processing method comprises the following steps:
determining laser processing parameter constraint conditions of the at least one characteristic phase according to the processing target information;
obtaining laser processing parameters from a preset corresponding relation of at least one characteristic object according to the laser processing parameter constraint condition; the preset corresponding relation of each feature phase comprises the relative relation of a plurality of laser processing parameters;
and the laser processing equipment processes the substrate according to the laser processing parameters.
Compared with the prior art, the laser processing method provided by the invention can accurately determine the change trend of the laser processing parameter corresponding to each characteristic object through the relative relationship of the plurality of laser processing parameters of each characteristic object, thereby determining the proper laser processing parameter from the change trend of the laser processing parameter corresponding to each characteristic object and the relative relationship of the plurality of laser processing parameters according to the constraint condition of the laser processing parameters, avoiding the problems of poor laser processing quality and processing defects caused by improper selection of the laser processing parameters, further improving the laser processing quality and reducing the occurrence probability of the processing defects. In addition, the laser processing method provided by the invention determines the laser processing parameters by utilizing the preset corresponding relation, only a few tests for determining the preset corresponding relation are needed, and a large number of tests are not needed, so that the efficiency for determining the laser processing parameters can be improved. Therefore, the laser processing method provided by the invention can improve the laser processing efficiency, improve the laser processing quality and shorten the laser processing period.
The invention also provides laser processing equipment. The laser processing apparatus comprises a processor and a communication interface, the communication interface is coupled with the processor, and the processor is used for running a computer program or instructions to realize the laser processing method.
Compared with the prior art, the beneficial effects of the laser processing equipment provided by the invention are the same as those of the laser processing method in the technical scheme, and are not repeated herein.
The invention also provides a computer readable storage medium. The computer-readable storage medium includes instructions that, when executed, cause the laser processing method described above to be performed.
Compared with the prior art, the beneficial effects of the computer-readable storage medium provided by the invention are the same as those of the laser processing method in the technical scheme, and are not repeated herein.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a flow chart of a laser processing method according to an embodiment of the present invention;
FIG. 2 is a flow chart of a composite laser processing method according to an embodiment of the present invention;
FIG. 3 shows SiC/Al of an embodiment of the present invention2O3The N-F curve of the pulse number N-ablation threshold F during the laser processing of the composite material;
FIG. 4 shows SiC/Al of an embodiment of the present invention2O3Laser repetition frequency F-first ablation threshold/second ablation threshold F in laser processing of composite materialth/FlA curve;
FIG. 5 shows SiC/Al of an embodiment of the present invention2O3An f-S curve of a repetition frequency f-thermal influence range parameter S during laser processing of the composite material;
FIG. 6 is a schematic view of a laser machining apparatus according to an embodiment of the present invention;
fig. 7 is a schematic diagram of a chip structure according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Various schematic diagrams of embodiments of the invention are shown in the drawings, which are not drawn to scale. Wherein certain details are exaggerated and possibly omitted for clarity of understanding. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the following, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.
In addition, in the present invention, directional terms such as "upper" and "lower" are defined with respect to a schematically placed orientation of components in the drawings, and it is to be understood that these directional terms are relative concepts, which are used for relative description and clarification, and may be changed accordingly according to the change of the orientation in which the components are placed in the drawings.
In recent years, laser processing has attracted attention as a non-contact processing method, and is widely used because of its characteristics such as no need for a tool, high processing speed, and small surface deformation. For example, materials are cut, polished, cleaned, punched, etc. by laser processing.
In the laser processing technology, a laser processing strategy needs to be established first, and then the laser processing equipment carries out processing according to the established laser processing strategy.
The laser processing strategy described above includes a plurality of laser processing parameters. Improper selection of laser processing parameters can lead to poor laser processing quality and even cause processing defects. For example: when the carbon fiber reinforced resin matrix composite or the metal matrix composite is subjected to laser processing, the problems of fiber ablation or extraction of the carbon fiber reinforced material, particle peeling of the metal reinforced material and the like can be caused by improper selection of laser processing parameters.
In the prior art, numerous tests are performed on a particular work substrate to determine the laser machining parameters of the work substrate.
In order to solve the problem of poor laser processing quality or processing defects caused by improper laser processing parameter selection, the embodiment of the invention provides a laser processing method. The laser processing method can be used for processing by applying various existing lasers. For example: helium-neon lasers, carbon dioxide lasers, diode lasers, excimer lasers, and the like.
The excimer laser has high output energy, short wavelength and large single photon energy, and is easy to realize cold processing by destroying chemical bonds of materials. And can achieve higher precision, excellent surface quality and smaller thermal influence range, and is widely applied. For example, composite materials such as carbon fiber reinforced resin matrix composite materials and metal matrix composite materials are important novel materials and are widely applied to the fields of aerospace, energy sources, automobiles, national defense equipment and the like. However, these composites have high hardness, low anisotropy, and low interlayer strength, which make them difficult to process. The traditional processing mode has low efficiency, the surface of the material is easy to generate scratches, peeling, deformation and other damages during processing, and the processing cutter can be worn, so that the processing reliability is reduced. Excimer laser processing is therefore an important way of processing composite materials.
As shown in fig. 1, the laser processing method provided by the embodiment of the invention is applied to laser processing a substrate, and the substrate contains at least one characteristic phase. The laser processing method can be executed by a laser processing device and can also be executed by a chip applied to the laser processing device. The laser processing method provided by the embodiment of the invention is described below with a laser processing apparatus as an execution subject. The laser processing method comprises the following steps:
s100, the laser processing equipment determines the laser processing parameter constraint condition of at least one characteristic phase according to the processing target information.
S200, laser processing equipment obtains laser processing parameters from the preset corresponding relation of at least one characteristic object phase according to the constraint conditions of the laser processing parameters; the preset corresponding relation of each characteristic phase comprises the relative relation of a plurality of laser processing parameters. It should be understood that the above-mentioned relative relationship of the plurality of laser processing parameters is specifically presented in the form of a relationship curve or a relational expression between the laser processing parameters, but is not limited thereto.
In practical application, laser processing parameters are determined by combining laser processing parameter constraint conditions and conditions of the preset corresponding relation of each characteristic phase.
And S300, processing the substrate by the laser processing equipment according to the laser processing parameters.
Based on the laser processing method, the change trend of the laser processing parameters corresponding to each feature can be accurately determined through the relative relationship of the laser processing parameters of each feature, so that the appropriate laser processing parameters are determined from the change trend of the laser processing parameters corresponding to each feature and the relative relationship of the laser processing parameters according to the constraint conditions of the laser processing parameters, the problems of poor laser processing quality and processing defects caused by improper selection of the laser processing parameters are solved, the laser processing quality is improved, and the occurrence probability of the processing defects is reduced. In addition, the laser processing method provided by the invention determines the laser processing parameters by utilizing the preset corresponding relation, only a few tests for determining the preset corresponding relation are needed, and a large number of tests are not needed, so that the efficiency for determining the laser processing parameters can be improved. Therefore, the laser processing method provided by the invention can improve the laser processing efficiency, improve the laser processing quality and shorten the laser processing period.
As a possible implementation manner, the processing purpose information includes one or more of a laser processing process type, a processing efficiency, and a processing quality, and is not limited thereto. Exemplary types of laser machining processes include polishing, cutting, cleaning, welding, and the like.
Based on the processing object information, it is possible to determine a plurality of laser processing parameter constraints for each feature phase. Illustratively, the laser processing parameter constraints for each feature phase include an energy density greater than or equal to a preset energy density threshold, a number of pulses less than or equal to a preset number of pulses threshold, and a laser repetition frequency greater than or equal to a preset laser repetition frequency threshold.
In an example, the energy density preset threshold may be a point value or an interval value. For example: the energy density preset threshold value is 2J/cm2、1J/cm2、3J/cm2And (4) an equivalent value. Another example is: the energy density preset threshold value is 1J/cm2～3J/cm2、2J/cm2～4J/cm2And (4) equal interval numerical values.
It should be noted that the preset energy density threshold includes a first preset energy density threshold and a second preset energy density threshold. According to the processing purpose information, the energy density is also determined to be greater than or equal to a first energy density preset threshold value, and the energy density is smaller than a second energy density preset threshold value.
For example, for the polishing process, the laser processing parameter constraint condition includes that the energy density is greater than or equal to a first energy density preset threshold value, so that when the substrate is subjected to laser processing polishing, the surface of the substrate can reach the ablation degree required by the polishing process; meanwhile, the energy density is preferably smaller than a second energy density preset threshold value, so that the damage of the surface of the substrate caused by overhigh energy density and overlarge laser ablation intensity is avoided.
In an example, the preset threshold value of the number of pulses may be a point value or an interval value. For example: the number of pulses presets a threshold of 10, 8, 6, etc. Another example is: the preset threshold value of the pulse number is 10-12, 6-8 and the like interval numerical values.
It should be noted that the preset threshold of the number of pulses includes a first preset threshold of the number of pulses and a second preset threshold of the number of pulses. According to the processing purpose information, the pulse number is determined to be smaller than or equal to a first pulse number preset threshold value, and the pulse number is larger than a second pulse number preset threshold value.
For example, for the purpose of processing to improve the laser processing efficiency, the laser processing parameter constraints include that the number of pulses is less than or equal to a first preset threshold for the number of pulses, i.e., the smaller the number of pulses, the better. Meanwhile, from the processing purpose of ensuring the laser processing quality, the laser processing parameter constraint condition comprises that the laser quantity is greater than a second laser quantity preset threshold value, so that the laser processing period is prevented from being overlong.
In an example, the laser repetition frequency preset threshold may be a point value or an interval value. For example: the laser repetition frequency is preset with the thresholds of 100Hz, 300Hz, 500Hz, etc. Another example is: the preset threshold value of the laser repetition frequency is an interval numerical value of 100 Hz-300 Hz, 200 Hz-500 Hz and the like.
It should be noted that the preset laser repetition frequency threshold includes a first preset laser repetition frequency threshold and a second preset laser repetition frequency threshold. According to the processing purpose information, the laser repetition frequency is determined to be greater than or equal to a first laser repetition frequency preset threshold, and the laser repetition frequency is determined to be less than a second laser repetition frequency preset threshold.
For example, for the purpose of improving the laser processing efficiency, the laser processing parameter constraint condition includes that the laser repetition frequency is greater than or equal to a first laser repetition frequency preset threshold value, i.e., the larger the laser repetition frequency, the better. Meanwhile, from the equipment parameters and the processing precision of the laser, the constraint conditions of the laser processing parameters comprise that the laser repetition frequency is smaller than a preset threshold of the second laser repetition frequency, so that the determined laser repetition frequency is smaller than the maximum set laser repetition frequency of the laser.
The laser processing parameters are obtained from the preset corresponding relation of at least one characteristic object according to the constraint conditions of the laser processing parameters. Therefore, the laser processing parameters and the laser processing parameter constraint conditions have corresponding relations. For example: and obtaining the selectable range of the pulse number from the preset corresponding relation of each characteristic phase according to the condition that the pulse number is less than or equal to the preset threshold of the pulse number under the constraint condition of the laser processing parameters. And obtaining the selectable range of the energy density from the preset corresponding relation of each characteristic phase according to the laser processing parameter constraint condition that the energy density is greater than or equal to the preset threshold of the energy density. And obtaining the selectable range of the laser repetition frequency from the preset corresponding relation of each characteristic phase according to the laser processing parameter constraint condition that the laser repetition frequency is greater than or equal to the preset threshold of the laser repetition frequency.
As a possible implementation, the laser processing parameters include, but are not limited to, energy density, laser repetition rate, and number of pulses. Accordingly, the correlation of the plurality of laser processing parameters includes the correlation of energy density, laser repetition frequency, and number of pulses.
According to the technical scheme, the energy density of the laser has important influence on the processing intensity of the laser and the ablation degree of the substrate. The laser processing intensity and the ablation degree of the laser processing on the substrate in the laser processing process can be effectively controlled through the determination of the selectable numerical value of the energy density. Laser repetition frequency and number of pulses have a significant impact on laser processing efficiency. The laser processing efficiency can be effectively and accurately controlled through the laser repetition frequency and the pulse number. Therefore, the energy density, the laser repetition frequency and the pulse number are taken as representative laser processing parameters for research, and the relative relation among the energy density, the laser repetition frequency and the pulse number is considered, so that the problem of low work efficiency in determining the laser processing parameters due to excessive laser processing parameters can be solved, and the laser processing intensity, the substrate ablation degree and the laser processing efficiency can be accurately and effectively controlled through the laser processing parameters.
It should be understood that the above-described relative relationships between the energy density, the laser repetition rate, and the number of pulses may be stored in a direct relationship or in an indirect relationship.
Illustratively, when the relative relationship among the energy density, the laser repetition frequency, and the number of pulses is maintained in an indirect correspondence, the relative relationship among the plurality of laser processing parameters includes the relative relationship among the energy density and the laser repetition frequency, the relative relationship among the energy density and the number of pulses, the relative relationship among the laser repetition frequency and the number of pulses, and the relative relationship among the energy density, the laser repetition frequency, and the number of pulses. It should be understood that the relative relationship between the energy density and the laser repetition frequency, and the relative relationship between the energy density and the number of pulses can be derived from the relative relationship between the energy density and the laser repetition frequency, and the relative relationship between the energy density and the number of pulses.
As a possible implementation manner, the preset corresponding relationship of each feature phase further includes a relative relationship between the laser processing parameter and the influence factor of the laser processing process.
The influence of the plurality of laser processing parameters of each characteristic phase on each influence factor in the laser processing process can be obtained from the relative relation between the laser processing parameters and the influence factors in the laser processing process. According to the constraint conditions of the laser processing parameters, namely according to the requirements on each influence factor of the laser processing process, the relative relation between the laser processing parameters and the influence factors of the laser processing process and the relative relation between the laser processing parameters can be combined, so that more accurate and appropriate laser processing parameters are determined, and the laser processing quality is improved.
It should be noted that, the specific presentation manner of the relative relationship between the laser processing parameters and the laser processing process influencing factors is a relationship curve between the laser processing parameters and the laser processing process influencing factors or a relationship expression between the laser processing parameters and the laser processing process influencing factors, but is not limited thereto.
In some embodiments, when the laser processing parameters include fluence, laser repetition rate, number of pulses,
the relative relation between the laser processing parameters of each characteristic phase and the influence factors of the laser processing process comprises the following steps: the relative relation between the energy density and the influence factors of the laser processing process, the relative relation between the pulse number and the influence factors of the laser processing process, and the relative relation between the laser repetition frequency and the influence factors of the laser processing process.
Based on the technical scheme, the relative relation between the laser processing parameters of each characteristic phase and the influence factors of the laser processing process is researched from three representative laser processing parameters, namely energy density, laser repetition frequency and pulse number, so that the influence of the laser processing parameters on the laser processing intensity, the substrate ablation degree and the laser processing efficiency can be accurately reflected, and the problem of low efficiency caused by the research on the relative relation between various laser processing parameters and the influence factors of the laser processing process is avoided. Therefore, according to the technical scheme, the laser processing parameter determining efficiency can be improved while the proper and accurate laser processing parameters can be determined, and the laser processing quality and the laser processing efficiency are further improved.
In some embodiments, when the laser processing parameters include fluence, laser repetition frequency, number of pulses, and the laser processing process influencing factors include ablation threshold, and/or thermal influence range parameters, the laser processing parameters of each feature phase relative to the laser processing process influencing factors includes: laser repetition frequency versus ablation threshold, number of pulses versus ablation threshold, and heat affected range parameter at minimum fluence (within a range where fluence is not less than ablation threshold). In this case, the relative relationship between the laser repetition frequency and the ablation threshold can be derived from the relative relationship between the fluence and the ablation threshold. The relative relation between the laser repetition frequency and the thermal influence range parameter can be deduced.
It is understood that the heat affected zone parameter is the ratio of the size of the heat affected zone to the length of the work zone. The ablation threshold includes a first ablation threshold and a second ablation threshold, the first ablation threshold for the same feature phase being less than the second ablation threshold. The first ablation threshold is the energy density at which irreversible destruction of the material is achieved. The second ablation threshold is the fluence at which significant damage to the material occurs under a single pulse condition. The apparent damage is macroscopic damage.
When the relative relation between the laser processing parameters of each characteristic phase and the influence factors of the laser processing process comprises the following steps: the obtaining of the laser processing parameters from the predetermined correspondence of at least one phase according to the laser processing parameter constraints, in the case of the relative relationship between the laser repetition frequency and the ablation threshold, the relative relationship between the number of pulses and the ablation threshold, and the relative relationship between the laser repetition frequency and the thermal influence range parameter when the fluence is at a minimum (within a range in which the fluence is not less than the ablation threshold), comprises:
a selectable range of pulse numbers is determined from the first trend of change according to laser processing parameter constraints. The first trend is a trend of a variation of the number of pulses corresponding to each feature from the ablation threshold.
In practical application, a relation curve between the pulse number corresponding to each characteristic and an ablation threshold is obtained, and then a selectable range meeting the requirement that the pulse number is smaller than or equal to a preset pulse number threshold is screened from the relation curve.
And determining the laser repetition frequency and the selectable range of the energy density corresponding to the laser repetition frequency from the second variation trend according to the laser processing parameter constraint condition. The second trend is a trend of the laser repetition frequency corresponding to each feature along with the ablation threshold.
In practical application, a relation curve of the laser repetition frequency and the ablation threshold corresponding to each characteristic object is obtained, and then a selectable range of the laser repetition frequency and the energy density, which meets the condition that the laser repetition frequency is greater than or equal to a preset laser repetition frequency threshold and the energy density is greater than or equal to a preset energy density threshold, is screened from the relation curve.
In order to ensure that the laser processing method provided by the embodiment of the present invention has a relatively wide application range, the ablation threshold may be set to include a first ablation threshold and a second ablation threshold, and when the first ablation threshold of the same feature phase is smaller than the second ablation threshold, the second variation trend is a variation trend of the laser repetition frequency and the first ablation threshold corresponding to each feature phase and a variation trend of the laser repetition frequency and the second ablation threshold.
And determining the selectable range of the energy density from the third trend of change according to the constraint condition of the laser processing parameter. The third trend is a trend of the laser repetition frequency and the thermal influence range parameter corresponding to each feature in the case where the fluence is minimum (in the range where the fluence is not less than the ablation threshold). The third trend is a selectable range of fluence excluding the influence of fluence on the heat affected range parameter at the minimum fluence (within a range where the fluence is not less than the ablation threshold).
In practical application, a relation curve of laser repetition frequency and heat influence range parameters corresponding to each characteristic object is obtained under the condition that the energy density is minimum (within the range that the energy density is not less than an ablation threshold), then a selectable range of the laser repetition frequency, in which the ratio of the size of a heat influence zone to the length of a processing zone is small and the laser repetition frequency is greater than or equal to a preset threshold of the laser repetition frequency, is screened from the relation curve, and then the corresponding selectable range of the energy density is deduced from the selectable range of the laser repetition frequency.
From the above, the determination process of the selectable range of the pulse number, the selectable range of the laser repetition frequency and the selectable range of the energy density corresponding to the laser repetition frequency is related to the ablation threshold, and the ablation threshold can visually and accurately represent the ablation degree and the processing strength of the characteristic phase. Therefore, the relative relation between the pulse number, the energy density, the laser repetition frequency and the ablation threshold can accurately reflect the influence of the laser processing parameters on the laser processing intensity, the laser processing efficiency and the substrate ablation degree, thereby accurately determining the selectable ranges of the pulse number, the energy density and the laser repetition frequency from the angles of the laser processing intensity, the laser processing efficiency and the substrate ablation degree and improving the laser processing quality.
As for the determination process of the selectable range of the energy density, the laser processing precision can be accurately represented by adopting the parameters of the thermal influence range. The selectable range of the energy density determined by the heat influence range parameter can effectively control the laser processing precision, further optimize the selectable range of the energy density from the perspective of the laser processing precision, and improve the laser processing quality.
As a possible implementation manner, before determining the laser processing parameter constraint condition of at least one characteristic phase according to the processing purpose information, the method further includes: screening the substrate for at least one character phase.
It is understood that the feature phases of the substrate may be one, two, three or even more. The number and type of feature phases can be set as the case may be.
Illustratively, when the substrate is a composite material, the composite material includes m matrix phases and n reinforcement phases.
When m ═ n ═ 1, the at least one feature phase includes a matrix phase and a reinforcement phase.
When m is 1 and n is more than 2, the at least one characteristic phase comprises a matrix phase and characteristic enhancement phases, and the characteristic enhancement phases are the enhancement phases with the highest content or the highest ablation threshold in the n enhancement phases. Screening the substrate for at least one character phase comprises:
and if the content difference value of the reinforced phase with the highest content and the reinforced phases with other contents is less than or equal to a preset percentage, determining the reinforced phase with the highest ablation threshold in the plurality of reinforced phases with the content difference value less than or equal to the preset percentage as the characteristic reinforced phase. It is to be understood that the at least one character phase may include a plurality of substances of different materials. In this case, each substance can be considered as a characteristic phase. Of course, at least one of the feature phases may also include multiple forms of the same material. In this case, different crystal forms of the material can be regarded as different characteristic phases. The predetermined percentage is 1% to 10% by volume, but may be determined according to actual conditions, and is not limited thereto.
And if the content difference value of the reinforced phase with the highest content and the reinforced phases with other contents is more than a preset percentage, determining the reinforced phase with the highest content in the n reinforced phases as the characteristic reinforced phase.
The matrix phase and the reinforcing phase are used as component materials with different functions, so that the characteristic phases are screened in the matrix phase and the reinforcing phase respectively, and the omission of the characteristic phases can be avoided. In addition, the reinforcing phase with the highest content is preferentially selected as the characteristic phase, and laser processing parameters can be determined more accurately through research on the preset relation of the high-content reinforcing phase which has larger influence on the laser processing effect of the substrate and the laser processing process.
In order to more clearly describe the laser processing method provided by the embodiment of the present invention, the following description describes a process of processing a substrate formed of a composite material by an excimer laser processing method. It is to be understood that the following description is for purposes of illustration only and not limitation of the laser machining method.
In an implementation manner, as shown in fig. 2, the composite material is used as a substrate, and excimer laser processing is taken as an example. The specific process of the laser processing method comprises the following steps:
s001, determining the matrix and the reinforcing phase of the composite material. And judging whether the volume contents of the multiple reinforcing phases are similar or not, namely judging that the volume contents of the multiple reinforcing phases are different by less than or equal to 1-10% in volume percentage, and if not, determining that the phase A is the matrix, and the phase B is the reinforcing phase or the phase with the highest volume content in the reinforcing phases. And if so, determining the A phase as the matrix, and determining the B phase as the reinforcing phase with the highest ablation threshold in the plurality of reinforcing phases with the content difference of less than or equal to 1-10% by volume.
And S002, determining laser processing parameter constraint conditions of at least one characteristic phase according to the processing target information.
S003, ablation threshold values of the A phase and the B phase were measured, respectively. Adjusting the laser repetition frequency F of the excimer laser to the intermediate frequency of the laser output, setting i to 1, setting the number of pulses N to 2i, and measuring the first ablation threshold F of the A phase and the B phaseth(A)i、Fth(B)i。
Let i equal i +1 until calculating A phase, B phase thetai＝[F(i+1)-F(i)]/F(i+1)Obtaining Max (theta)i(A),θi(B),)<And 10 percent, obtaining first ablation threshold data, drawing an A-phase N-F curve and a B-phase N-F curve respectively according to the first ablation threshold data, and selecting an applicable data area according to the constraint conditions of laser processing parameters, namely according to process requirements.
S004, setting j to 1, and setting the laser repetition frequency to j × 0.2 × fMaxMeasuring a first ablation threshold Fth(A)、Fth(B) Second burn-out threshold Fl(A)、Fl(B)。
Let j equal j +1 until f is measuredMaxAnd obtaining data corresponding to the parameters, drawing A, B phase F-F curves, and determining the range of selectable energy density and corresponding laser repetition frequency according to the technological requirements (laser processing parameter constraint conditions). For example: cutting process, laser processing parameter constraint condition including energy density greater than Fl(B) The numerical value section of (1). Modification process, laser processing parameter constraint condition including energy density greater than Fth(B) And Fth(A) And is less than Fl(B) The numerical value section of (1). Cleaning process, and laser processing parameter constraint condition including energy density greater than Fth(A) The numerical value section of (1). Generally, to improve the processing efficiency, a higher repetition frequency and a corresponding energy density are selected.
S005, set k to 4, set n to 4, and set laser repetition frequency f to [ k × f ═ 4ms+n×fMs]/8，fms、fMsThe energy density was set to a minimum value corresponding to f for usable values of minimum and maximum laser repetition frequencies, and the ratio of the heat affected zone size of the composite material to the length of the processed zone was measured.
Let k be k-1, n be n +1, until f be fMsAnd (3) obtaining data of the size of the heat affected zone, drawing an f-S curve of the influence of the laser repetition frequency on the ratio of the size of the heat affected zone to the length of the processing zone, determining the influence degree of the laser repetition frequency on the parameters of the heat affected zone, and selecting the corresponding highest repetition frequency within an acceptable range.
S006, synthesizing an N-F curve, an F-F curve and an F-S curve, and selecting parameters with high laser repetition frequency, low pulse number and small heat influence range as laser processing parameters from the aspect of improving efficiency.
And S007, controlling laser processing equipment to process the substrate according to the laser processing parameters.
In another implementation, SiC/Al is polished with 193nm excimer laser2O3The laser processing method provided by the embodiment of the invention comprises the following steps:
1) determining two characteristic phases of the composite material, wherein SiC is A phase and Al2O3Is phase B.
2) And determining laser processing parameter constraints of the A phase and the B phase according to the polishing process requirements and the efficiency improvement requirements, wherein the laser processing parameter constraints comprise that the energy density is greater than a first ablation threshold value.
3) Adjusting the excimer laser repetition frequency F to 200Hz, setting i to 1, setting the number of pulses N to 2i, and measuring the first ablation threshold F of the a-phase and the B-phaseth(A)i、Fth(B)i。
4) Let i equal i +1 until calculating A phase, B phase thetai＝[F(i+1)-F(i)]/F(i+1)Obtaining Max (theta)i(A),θi(B))<Measuring four groups of first ablation threshold data and drawing N-F curves of the A phase and the B phase according to the data, wherein the data is 10 percent; the polishing process requires that both phases be affected simultaneously, so the applicable data field is Fth(B) The upper data.
5) Setting j to 1, and setting the repetition frequency to j × 0.2 × fMaxMeasuring a first ablation threshold Fth(A)、Fth(B) And a second burn-out threshold Fl(A)、Fl(B) The range of selectable energy densities and corresponding laser repetition rates for the polishing process is determined.
6) Let j equal j +1 until f is measuredMaxCorresponding parameters, five groups of data are obtained and F-F curves of the phase A and the phase B as shown in figure 4 are drawn; the polishing process requires that a first ablation threshold of the material be reached, but should be as low as possible than a second ablation threshold of the matrix phase, so that the numerical range for determining a suitable energy density is defined at Fth(B) Above the curve, it should not be higher than Fl(B)。
7) Setting k to 4, n to 4, and setting the laserRepetition frequency f ═ k × fms+n×fMs]/8，fms、fMsThe ratio of the heat affected zone size of the composite material to the length of the processed zone was determined by setting the energy density to the minimum value corresponding to f for the minimum and maximum laser repetition frequency values available.
8) Let k be k-1, n be n +1, until f be fMsAnd (3) obtaining five groups of data of the thermal influence area, drawing an f-S curve of the laser repetition frequency and the thermal influence range parameter shown in figure 5, and finding that the influence degree of the laser repetition frequency on the thermal influence range parameter of the material is relatively small.
9) The energy density is 2.5J/cm from the angle of improving the efficiency by combining an N-F curve, an F-F curve and an F-S curve2The laser repetition frequency was 500Hz, and the number of pulses was 2.
10) And controlling the laser processing equipment to process the substrate according to the laser processing parameters.
The foregoing mainly introduces aspects of embodiments of the present invention. It is understood that, in order to implement the above functions, the laser processing apparatus includes a corresponding hardware structure and/or software module for performing each function. Those of skill in the art will readily appreciate that the embodiments of the present invention are capable of being implemented in hardware or a combination of hardware and computer software for performing the steps of the various examples described in connection with the embodiments disclosed herein. Whether a function is performed as hardware or computer software drives hardware depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
As shown in fig. 6, the embodiment of the present invention provides a laser processing apparatus, which includes a processor 11 and a communication interface 12 coupled to the processor 11. The processor is used for running a computer program or instructions to implement the laser processing method as in the above embodiments. The processor 11 is electrically connected to the communication interface 12 via a communication line 13.
As a possible implementation manner, as shown in fig. 6, the processor 11 may be a general processing unit (CPU), a microprocessor, an application-specific integrated circuit (ASIC), or one or more integrated circuits for controlling the execution of the program according to the present invention.
As a possible implementation, the communication interface 12, as shown in fig. 6, is adapted to any transceiver or the like for communicating with other devices or communication networks.
As a possible implementation, the communication line 13 may include a path to transfer information between the above components, as shown in fig. 6.
As a possible implementation, the communication device may further comprise a memory 14, as shown in fig. 6. The memory 14 may be a read-only memory (ROM) or other type of static storage device that can store static information and instructions, a Random Access Memory (RAM) or other type of dynamic storage device that can store information and instructions, an electrically erasable programmable read-only memory (EEPROM), a compact disc read-only memory (CD-ROM) or other optical disc storage, optical disc storage (including compact disc, laser disc, optical disc, digital versatile disc, blu-ray disc, etc.), magnetic disc storage media or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and that can be accessed by a computer, but is not limited to such. The memory may be separate and connected to the processor via a communication line 13. The memory may also be integral to the processor.
As shown in fig. 6, the memory 14 is used for storing computer-executable instructions for executing the present invention, and is controlled by the processor 11. The processor 11 is configured to execute computer-executable instructions stored in the memory 14, so as to implement the laser processing method provided by the following embodiments of the present invention.
Optionally, the computer-executable instructions in the embodiment of the present invention may also be referred to as application program codes, which is not specifically limited in this embodiment of the present invention.
In particular implementations, as one embodiment, as shown in FIG. 6, processor 11 may include one or more CPUs, such as CPU0 and CPU1 of FIG. 6.
In one implementation, as shown in fig. 6, the laser processing apparatus may include a plurality of processors, such as processor 11 and processor 15 in fig. 6, as an example. Each of these processors may be a single core processor or a multi-core processor.
Fig. 7 shows a schematic diagram of a chip. As shown in fig. 7, the chip 20 includes one or more than two (including two) processors 21 and a communication interface 22.
Optionally, as shown in fig. 7, the chip further comprises a memory 23. The memory 23 may include both read-only memory and random access memory, and provides operating instructions and data to the processor 21. A portion of the memory 23 may also include non-volatile random access memory (NVRAM).
In some embodiments, as shown in FIG. 7, memory 23 stores elements, execution modules or data structures, or a subset thereof, or an expanded set thereof.
As shown in fig. 7, the processor 21 controls the processing operation of any one of the processor and the power supply included in the electronic device in the embodiment of the present invention, and the processor 21 may also be referred to as a Central Processing Unit (CPU).
As shown in fig. 7, the memory 23 includes a read only memory and a random access memory, and provides instructions and data to the processor 23. A portion of the memory 23 may also include NVRAM. For example, in an application the processor 21, the communication interface 22 and the memory 23 are coupled together by a bus system 24, wherein the bus system 24 may comprise a power bus, a control bus, a status signal bus, etc. in addition to a data bus. For clarity of illustration, however, the various buses are labeled as bus system 24 in fig. 7.
In a possible implementation manner, as shown in fig. 7, the communication interface 22 is used to support the above chip to perform information transmission of the laser processing method in the above embodiment. The processor 21 is used to support the above chip to execute the steps of the laser processing method in the above embodiments.
The embodiment of the invention also provides a computer-readable storage medium, wherein the computer-readable storage medium stores instructions, and when the instructions are executed, the laser processing method is realized.
Those of ordinary skill in the art will appreciate that the laser machining methods described in connection with the embodiments disclosed herein can be implemented in electronic hardware, or in a combination of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
Similarly, it should be appreciated that in the description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the invention and aiding in the understanding of one or more of the various inventive aspects. However, the method of the present invention should not be construed to reflect the intent: that the invention as claimed requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this invention.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The invention can be implemented by means of algorithms comprising different calculation steps, and the simple algorithms listed in the examples should not be considered as limiting the claimed invention. The usage of the words first, second and third, etcetera do not indicate any ordering. These words may be interpreted as names.
The above description is only for the specific embodiment of the present invention or the description thereof, and the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and the changes or substitutions should be covered within the protection scope of the present invention. The protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (12)
1. A laser machining method for laser machining a substrate, the substrate including at least one feature phase, the laser machining method comprising:
determining laser processing parameter constraint conditions of the at least one characteristic phase according to the processing target information;
obtaining laser processing parameters from a preset corresponding relation of at least one characteristic object according to the laser processing parameter constraint condition; the preset corresponding relation of each feature phase comprises the relative relation of a plurality of laser processing parameters;
and the laser processing equipment processes the substrate according to the laser processing parameters.
2. The laser processing method according to claim 1,
the laser processing parameter constraint conditions of each feature phase comprise that the energy density is greater than or equal to a preset energy density threshold, the pulse number is less than or equal to a preset pulse number threshold, and the laser repetition frequency is greater than or equal to a preset laser repetition frequency threshold;
the plurality of laser processing parameters are related to each other in terms of energy density, laser repetition frequency, and number of pulses.
3. The laser machining method of claim 1, wherein the predetermined correspondence of each of the feature phases further includes a relative relationship between the laser machining parameter and a laser machining process influencing factor.
4. The laser machining method of claim 3, wherein the laser machining parameters of each of the feature phases relative to laser machining process influencing factors comprise: the relative relation between the energy density and the influence factors of the laser processing process, the relative relation between the pulse number and the influence factors of the laser processing process, and the relative relation between the laser repetition frequency and the influence factors of the laser processing process.
5. The laser processing method according to claim 3,
the laser processing parameters of each feature phase relative to laser processing process influencing factors comprise:
the relative relationship of laser repetition frequency to ablation threshold; the number of pulses versus the ablation threshold; laser repetition frequency versus thermal influence range parameters.
6. The laser machining method of claim 5, wherein the ablation threshold comprises a first ablation threshold and a second ablation threshold, the first ablation threshold for the same feature phase being less than the second ablation threshold.
7. The laser processing method according to any one of claims 3 to 6, wherein obtaining laser processing parameters from a preset correspondence of at least one of the feature phases according to the laser processing parameter constraint condition comprises:
determining a selectable range of pulse numbers from a first trend of change according to the laser processing parameter constraint condition; the first variation trend is a variation trend of the number of pulses corresponding to each feature and an ablation threshold;
determining a laser repetition frequency and a selectable range of energy density corresponding to the laser repetition frequency from a second variation trend according to the laser processing parameter constraint condition; the second variation trend is a variation trend of the laser repetition frequency and the ablation threshold corresponding to each feature;
determining a selectable range of energy density from a third variation trend according to the laser processing parameter constraint condition; the third variation trend is a variation trend of the laser repetition frequency and the thermal influence range parameter corresponding to each feature.
8. The laser processing method according to claim 7,
the second variation trend is a variation trend of the laser repetition frequency and the first ablation threshold and a variation trend of the laser repetition frequency and the second ablation threshold corresponding to each feature.
9. The laser processing method according to claim 1,
before determining the laser processing parameter constraint condition of the at least one characteristic phase according to the processing purpose information, the method further comprises the following steps:
screening the substrate for at least one character phase.
10. The laser processing method of claim 9, wherein when the substrate is a composite material, the composite material includes m matrix phases and n reinforcement phases;
when m ═ n ═ 1, the at least one feature phase comprises a matrix phase and a reinforcement phase;
when m is 1 and n is more than 2, the at least one characteristic phase comprises a matrix phase and characteristic enhancement phases, and the characteristic enhancement phases are the enhancement phases with the highest content or the highest ablation threshold in the n enhancement phases.
11. A laser machining apparatus comprising a processor and a communication interface, the communication interface being coupled to the processor, the processor being configured to execute a computer program or instructions to implement the laser machining method of any one of claims 1 to 10.
12. A computer-readable storage medium comprising instructions that, when executed, cause the laser machining method of any one of claims 1-10 to be performed.
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