CN111290077B - SOI substrate with double-layer isolation layer - Google Patents
SOI substrate with double-layer isolation layer Download PDFInfo
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- CN111290077B CN111290077B CN201811484632.4A CN201811484632A CN111290077B CN 111290077 B CN111290077 B CN 111290077B CN 201811484632 A CN201811484632 A CN 201811484632A CN 111290077 B CN111290077 B CN 111290077B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/34—Optical coupling means utilising prism or grating
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12152—Mode converter
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Abstract
The present invention provides an SOI substrate with a double-layer isolation layer, the SOI substrate including: a substrate silicon layer; a first isolation layer over the substrate silicon layer, the first isolation layer having a first refractive index; a second isolation layer over the first isolation layer, the second isolation layer having a second refractive index; and a top silicon layer located over the second isolation layer; wherein the first refractive index is less than the second refractive index. The SOI substrate can be used for manufacturing silicon photonic devices, for example, a spot size converter with mutually coupled waveguides and optical fibers is required to be used in all silicon photonic devices, so that the spot size converter has the advantages of low coupling loss, large wavelength bandwidth, insensitivity to polarization, large coupling tolerance, convenience for packaging with the optical fibers and the like, and has wide application prospect in the field of optical communication.
Description
Technical Field
The invention belongs to the field of semiconductor device design and optical communication, and particularly relates to an SOI substrate with a double-layer isolation layer.
Background
Silicon-On-Insulator (SOI) technology introduces a buried oxide layer between the top Silicon and the backing substrate. By forming a semiconductor thin film on an insulator, the SOI material has advantages over bulk silicon: the dielectric isolation of components in the integrated circuit can be realized, and the parasitic latch-up effect in a bulk silicon CMOS circuit is thoroughly eliminated; the integrated circuit made of the material also has the advantages of small parasitic capacitance, high integration density, high speed, simple process, small short channel effect, particular application to low-voltage and low-power consumption circuits and the like, so that the SOI can possibly become the mainstream technology of deep submicron low-voltage and low-power consumption integrated circuits.
With the rise of intelligent devices and the popularization of social networks, communication traffic appears to grow explosively. The traditional electrical interconnection technology faces the problems of overlarge power consumption and overhigh time delay due to the increase of the number of transistors and the multiple increase of the throughput of chips, and the electricity consumed by the current global computing center accounts for 0.8 percent of the total electricity generation. The development of silicon photon technology provides an effective way for solving the problems. On one hand, the manufacturing process of the silicon-based integrated optical device is completely compatible with the microelectronic process, and the light wave is an electromagnetic wave (200-1000 THz) with extremely high frequency, so that a very large bandwidth is provided for signal transmission; on the other hand, the utilization rate of the communication bandwidth is greatly improved by Wavelength Division Multiplexing (WDM); in addition, optical communication has the advantages of small time delay, less heat generation, electromagnetic interference resistance and the like. Therefore, the silicon photonics technology is becoming the leading edge and the hot spot of the information science and technology, and developed countries such as the united states, the european union, and japan are struggling to make the silicon photonics technology fall under the scientific and technological strategic plan, which is dominant in the new electronic information technology revolution.
Silicon photonic devices based on SOI wafers are gradually put into mass production, and currently, the isolation layer of the commonly used SOI wafer is single-layer silicon dioxide.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, it is an object of the present invention to provide a double-layer isolation layer SOI substrate for solving the problem of the prior art that a single-layer isolation layer SOI wafer cannot exhibit the excellent performance of the device when used for fabricating some silicon photonic devices.
To achieve the above and other related objects, the present invention provides an SOI substrate having a double-layer isolation layer, the SOI substrate comprising: a substrate silicon layer; a first isolation layer over the substrate silicon layer, the first isolation layer having a first refractive index; a second isolation layer over the first isolation layer, the second isolation layer having a second refractive index; and a top silicon layer located over the second isolation layer; wherein the first refractive index is less than the second refractive index.
Optionally, the first refractive index and the second refractive index are both smaller than the refractive index of the substrate silicon layer, and the first refractive index and the second refractive index are both smaller than the refractive index of the top silicon layer.
Optionally, the first isolation layer comprises a first SiO of a first refractive index 2 A layer, the second isolation layer comprising a second SiO of a second refractive index 2 A layer, the first refractive index being less than the second refractive index.
Optionally, the first isolation layer comprises SiO 2 A layer, the second isolation layer comprising a SiON layer.
Optionally, the first isolation layer comprises a first SiON layer of a first refractive index, the second isolation layer comprises a second SiON layer of a second refractive index, the first refractive index being less than the second refractive index.
Optionally, the first isolation layer comprises SiO 2 A layer, the second isolation layer comprising a SiN layer.
Optionally, the first isolation layer comprises a SiON layer and the second isolation layer comprises a SiN layer.
The invention also provides a silicon photonic device which is formed by the SOI substrate based on the double-layer isolation layer.
Optionally, the silicon photonic device comprises a spot size converter, a first end of the spot size converter is connected to the silicon waveguide, and a second end of the spot size converter is connected to the optical fiber to couple the silicon waveguide and the optical fiber.
Optionally, the spot-size converter comprises a vertically coupled grating.
As described above, the SOI substrate having a double-layer isolation layer according to the present invention has the following advantageous effects:
the SOI substrate of the double-layer isolation layer has a 4-layer structure consisting of a substrate silicon layer, a first isolation layer, a second isolation layer and a top silicon layer, and the first refractive index of the first isolation layer is smaller than the second refractive index of the second isolation layer. By introducing the structure of the double isolation layers and preparing partial silicon optical passive devices by adopting the layers with high refractive index in the double isolation layers, the loss of the passive devices, such as optical waveguide loss, coupling loss and the like, can be effectively reduced, so that the loss of the integrated silicon optical chip is reduced.
The SOI substrate can be used for manufacturing silicon photonic devices, for example, a spot size converter with mutually coupled waveguides and optical fibers is required to be used in all silicon photonic devices, so that the spot size converter has the advantages of low coupling loss, large wavelength bandwidth, insensitivity to polarization, large coupling tolerance, convenience for packaging with the optical fibers and the like, and has wide application prospect in the field of optical communication.
Drawings
Fig. 1 is a schematic structural view of an SOI substrate as a double-layer isolation layer according to embodiment 1 of the present invention.
Fig. 2 to 4 are schematic structural views showing steps of a method for manufacturing an SOI substrate having a double-layer isolation layer according to embodiment 1 of the present invention.
Fig. 5 is a schematic structural view of an SOI substrate as a double-layer isolation layer according to embodiment 2 of the present invention.
Fig. 6 is a schematic structural view of an SOI substrate as a double-layer isolation layer according to embodiment 3 of the present invention.
Fig. 7 is a schematic structural view of an SOI substrate as a double-layer isolation layer according to embodiment 4 of the present invention.
Fig. 8 is a schematic structural view of an SOI substrate as a double-layer isolation layer according to embodiment 5 of the present invention.
Description of the element reference
101. Substrate silicon layer
102. Top silicon layer
201. First SiO 2 2 Layer(s)
202. Second SiO 2 Layer(s)
301 SiO 2 Layer(s)
302 SiON layer
401. A first SiON layer
402. A second SiON layer
501 SiO 2 Layer(s)
502 SiN layer
601 SiON layer
602 SiN layer
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 8. It should be noted that the drawings provided in the present embodiment are only for schematically illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
It should be noted that, since the SOI substrate with a single-layer silicon dioxide isolation layer cannot perform the excellent performance of some silicon photonic devices, for example, in all silicon photonic devices, a mode spot converter for coupling a waveguide and an optical fiber, such as a vertical coupling grating, is required to be used, and the vertical coupling grating based on the SOI substrate with a single-layer isolation layer has the advantages of large coupling tolerance and convenient packaging with the optical fiber, however, it also has significant disadvantages, such as polarization sensitivity, narrow wavelength bandwidth, high coupling loss, and the like. Therefore, an object of the present invention is to provide an SOI substrate with a double-layer isolation layer, which can provide silicon photonic devices such as a spot-size converter with the advantages of low coupling loss, large wavelength bandwidth, polarization insensitivity, large coupling tolerance, and convenience for packaging with an optical fiber.
Example 1
As shown in fig. 1, the present embodiment provides an SOI substrate with a double-layer isolation layer, where the SOI substrate has a four-layer structure and includes a substrate silicon layer, a first isolation layer, a second isolation layer, and a top silicon layer.
The first isolation layer is located over the substrate silicon layer, the first isolation layer having a first refractive index.
The second isolation layer is located on the first isolation layer, and the second isolation layer has a second refractive index, wherein the first refractive index is smaller than the second refractive index.
The top silicon layer is located above the second isolation layer.
The first refraction index and the second refraction index are both smaller than the refraction index of the substrate silicon layer, and the first refraction index and the second refraction index are both smaller than the refraction index of the top silicon layer.
In this embodiment, the first isolation layer comprises a first SiO of a first refractive index 2 Layer 201, the second isolation layer comprising a second SiO of a second refractive index 2 Layer 202, the first refractive index being less than the second refractive index, may be formed by adjusting SiO 2 Different SiO is realized by the growth conditions or growth process of the layer 2 The refractive index of the layer.
As shown in fig. 2 to 4, the present embodiment further provides a method for manufacturing an SOI substrate with a double-layer isolation layer, including the steps of:
1) Providing a first silicon substrate and a second silicon substrate, and forming a first isolation layer and a second isolation layer on the surfaces of the first silicon substrate and the second silicon substrate, respectively, as shown in fig. 2. For example, a thermal oxidation process or a chemical vapor deposition process may be used to form the first isolation layer and the second isolation layer on the surface of the first silicon substrate and the second silicon substrate.
2) Bonding the first isolation layer and the second isolation layer, as shown in fig. 3;
3) And thinning the second silicon substrate, for example, thinning the second silicon substrate by a grinding process (such as chemical mechanical grinding (CMP) and the like), or thinning the second silicon substrate by a Smart Cut process (Smart-Cut) to make the second silicon substrate a top silicon layer and to conform to the required thickness of the top silicon layer, as shown in fig. 4.
The embodiment also provides a silicon photonic device, which is formed on the basis of the SOI substrate with the double-layer isolation layer. The silicon photonic device comprises a spot size converter, for example, the spot size converter may be a vertical coupling grating, a first end of the spot size converter is connected to a silicon waveguide, a second end of the spot size converter is connected to an optical fiber to couple the silicon waveguide and the optical fiber, and the silicon waveguide and the vertical coupling grating are fabricated in a top silicon layer of an SOI substrate of the double-layer isolation layer.
The SOI substrate of the double-layer isolation layer has a 4-layer structure consisting of a substrate silicon layer, a first isolation layer, a second isolation layer and a top silicon layer, and the first refractive index of the first isolation layer is smaller than the second refractive index of the second isolation layer. By introducing the structure of the double isolation layers and preparing partial silicon optical passive devices by adopting the layers with high refractive index in the double isolation layers, the loss of the passive devices, such as optical waveguide loss, coupling loss and the like, can be effectively reduced, so that the loss of the integrated silicon optical chip is reduced. The SOI substrate can be used for manufacturing silicon photonic devices, for example, a spot size converter with mutually coupled waveguides and optical fibers is required to be used in all the silicon photonic devices, so that the spot size converter has the advantages of low coupling loss, large wavelength bandwidth, insensitivity to polarization, large coupling tolerance, convenience for packaging with the optical fibers and the like, and has wide application prospect in the field of optical communication.
Example 2
As shown in fig. 5, the present embodiment provides an SOI substrate with a double-layer isolation layer, whose basic structure and manufacturing method are as in embodiment 1, wherein the difference from embodiment 1 is that the first isolation layer comprises SiO 2 Layer 301, the second spacer layer comprising SiON layer 302.
Example 3
As shown in fig. 6, the present embodiment provides an SOI substrate with a dual-layer isolation layer, the basic structure and the manufacturing method thereof are as in embodiment 1, wherein the difference from embodiment 1 is that the first isolation layer includes a first SiON layer 401 with a first refractive index, the second isolation layer includes a second SiON layer 402 with a second refractive index, the first refractive index is smaller than the second refractive index, and specifically, the refractive index of the SiON layer can be adjusted by adjusting the ratio of O and N in the SiON layer.
Example 4
As shown in fig. 7, the present embodiment provides an SOI substrate with a double-layer isolation layer, whose basic structure and manufacturing method are as in embodiment 1, wherein the difference from embodiment 1 is that the first isolation layer comprises SiO 2 The layer 501 and the second isolation layer comprise the SiN layer 502, and the embodiment can obtain the refractive indexes of the first isolation layer and the second isolation layer which are different greatly, so that the effect of the invention is further improved.
Example 5
As shown in fig. 8, the present embodiment provides a SOI substrate with a dual-layer isolation layer, the basic structure and the manufacturing method thereof are as in embodiment 1, wherein the difference from embodiment 1 is that the first isolation layer includes a SiON layer 601, and the second isolation layer includes a SiN layer 602.
As described above, the SOI substrate having a double-layer isolation layer according to the present invention has the following advantageous effects:
the SOI substrate of the double-layer isolation layer has a 4-layer structure consisting of a substrate silicon layer, a first isolation layer, a second isolation layer and a top silicon layer, and the first refractive index of the first isolation layer is smaller than the second refractive index of the second isolation layer. The SOI substrate can be used for manufacturing silicon photonic devices, for example, a spot size converter with mutually coupled waveguides and optical fibers is required to be used in all silicon photonic devices, so that the spot size converter has the advantages of low coupling loss, large wavelength bandwidth, insensitivity to polarization, large coupling tolerance, convenience for packaging with the optical fibers and the like, and has wide application prospect in the field of optical communication.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Those skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. A silicon photonic device formed based on a double-layer isolation layer SOI substrate, the SOI substrate comprising:
a substrate silicon layer;
a first isolation layer over the substrate silicon layer, the first isolation layer having a first refractive index;
a second isolation layer over the first isolation layer, the second isolation layer having a second refractive index, the second isolation layer including a SiON layer or a SiN layer, wherein the first refractive index is smaller than the second refractive index, and the refractive index of the second isolation layer is adjusted by adjusting a ratio of O and N therein;
a top silicon layer located over the second isolation layer;
the silicon photonic device comprises a spot size converter for coupling a silicon waveguide and an optical fiber.
2. The silicon photonic device as claimed in claim 1, wherein: the first refractive index and the second refractive index are both smaller than the refractive index of the substrate silicon layer, and the first refractive index and the second refractive index are both smaller than the refractive index of the top layer silicon layer.
3. The silicon photonic device of claim 1, wherein: the first isolation layer comprises SiO 2 A layer, the second isolation layer comprising a SiON layer.
4. The silicon photonic device of claim 1, wherein: the first isolation layer includes a first SiON layer of a first refractive index, the second isolation layer includes a second SiON layer of a second refractive index, the first refractive index being less than the second refractive index.
5. The silicon photonic device of claim 1, wherein: the first isolation layer comprises SiO 2 A layer, the second isolation layer comprising a SiN layer.
6. The silicon photonic device as claimed in claim 1, wherein: the first isolation layer includes a SiON layer, and the second isolation layer includes a SiN layer.
7. A silicon photonic device formed based on a double-layer isolation layer SOI substrate, the SOI substrate comprising:
a substrate silicon layer;
a first isolation layer on the substrate silicon layer, the first isolation layer having a first SiO with a first refractive index 2 A layer;
a second isolation layer on the first isolation layer, the second isolation layer having a second refractive index, the second isolation layer having a second SiO of the second refractive index 2 A layer, wherein the first refractive index is less than the second refractive index;
a top silicon layer located over the second isolation layer;
wherein the silicon photonic device comprises a spot size converter for coupling a silicon waveguide and an optical fiber.
8. The silicon photonic device according to claim 1 or 7, wherein: the first end of the spot size converter is connected with the silicon waveguide, and the second end of the spot size converter is connected with the optical fiber so as to couple the silicon waveguide and the optical fiber.
9. The silicon photonic device according to claim 1 or 7, wherein: the spot-size converter includes a vertically coupled grating.
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| CN101556356A (en) * | 2009-04-17 | 2009-10-14 | 北京大学 | Grating coupler and application thereof in polarization and wave length beam splitting |
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| US6870987B2 (en) * | 2002-08-20 | 2005-03-22 | Lnl Technologies, Inc. | Embedded mode converter |
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| CN101308230A (en) * | 2008-07-03 | 2008-11-19 | 中国科学院上海微系统与信息技术研究所 | Isolator silicon based three-dimensional wedge-shaped spot-size converter and method for making same |
| CN101783318A (en) * | 2009-01-21 | 2010-07-21 | 台湾积体电路制造股份有限公司 | Method and structure for reducing cross-talk in image sensor devices |
| CN101556356A (en) * | 2009-04-17 | 2009-10-14 | 北京大学 | Grating coupler and application thereof in polarization and wave length beam splitting |
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