CN111289572A - Method and device for nondestructive testing of quality of conductive material based on resistance parameters - Google Patents
Method and device for nondestructive testing of quality of conductive material based on resistance parameters Download PDFInfo
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- CN111289572A CN111289572A CN201811493380.1A CN201811493380A CN111289572A CN 111289572 A CN111289572 A CN 111289572A CN 201811493380 A CN201811493380 A CN 201811493380A CN 111289572 A CN111289572 A CN 111289572A
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
Abstract
The invention relates to a method and a device for nondestructive testing of the quality of a conductive material based on resistance parameters, belonging to the field of nondestructive testing; the method comprises the following steps: continuously collecting the information of the detection material, and judging the quality of the detection material according to the collected information and the calculated resistance parameter; the information includes, but is not limited to, voltage, current, position, the information is continuous information; the resistance parameters comprise resistance and/or resistivity and are obtained by calculating continuously acquired information; comparing the obtained actual resistance parameter with the standard sample resistance parameter, judging that the area corresponding to the obtained actual resistance parameter has a defect when the absolute actual resistance parameter-standard sample resistance parameter/standard sample resistance parameter is greater than or equal to a defect judgment threshold value, and judging that the quality of the area corresponding to the obtained actual resistance parameter is qualified when the absolute actual resistance parameter-standard sample resistance parameter/standard sample resistance parameter is less than the defect judgment threshold value; during detection, the detection device and the detection material have relative motion.
Description
Technical Field
The invention relates to a method and a device for nondestructive testing of quality of a conductive material based on resistance parameters, belongs to the field of nondestructive testing, and particularly belongs to the technical field of online continuous nondestructive testing.
Background
The requirements of modern society on the quality of materials and products thereof are continuously improved, but the product quality is not guaranteed due to the lack of an efficient online detection and monitoring system. An online information acquisition and detection system is established, the product quality is improved through sensitive information feedback and accurate production process control, and the online information acquisition and detection system is always a very concerned problem for scientific and technological workers, technicians and production enterprises in China. Currently used online quality detection methods, such as infrared detection method, eddy current detection method, magnetic flux leakage detection method, and image-based surface quality detection method, have certain limitations. The maximum detection depth of the infrared detection method is only 1mm, and the data fluctuation is large; the eddy current detection method has low response speed and is not suitable for materials moving at high speed or continuous production lines; the magnetic flux leakage detection method is only suitable for magnetic substances such as iron, cobalt, nickel and the like, can not detect non-magnetic substances, has poor classification and identification capability on defects, and is easy to influence the measurement precision by the environment; image-based surface quality detection methods have difficulty detecting internal defects. Meanwhile, most of the detection devices of the detection method are statically placed or are limited by the structure of the device so as to be inconvenient to move, and the detection method is not suitable for detecting materials which are difficult to move. In addition, high-temperature environment is often involved in production, and the detection method is difficult to realize online continuous high-temperature detection.
The article "Electrical resistance and Thermal Conductivity of Pure Aluminum and Aluminum Alloys up to and above the multistep Temperature" reports the resistance change of Pure Aluminum in a vertical furnace using the direct current four-point method, the Temperature of which varies from 0 ℃ to 800 ℃, but the measuring device and the sample are static and the vertical furnace cannot accommodate longer samples. Patent CN201310530795.2 discloses a resistance testing device capable of measuring the resistance change of a sample in a temperature-changing environment, but the patent does not relate to information collection and analysis, and the measured area is fixed. In the prior art, samples to be detected are detected one by one in a segmented or point-by-point manner, time and space are discrete, information of materials cannot be continuously acquired, and key information is likely to be lost, so that certain characteristic data cannot be acquired or directly averaged, mutation points of the information cannot be accurately judged, and the quality of the detected materials and defect characteristics thereof cannot be judged.
The detection device and the detection material can move relatively, the information of the conductive material can be continuously collected, and systematic calculation and analysis are carried out based on the collected continuous information, so that defect judgment and quality detection are realized. The invention can detect moving or static materials, can realize continuous detection of the conductive materials and discrete detection of the conductive materials, and has all functions of the existing discrete detection technology.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a method and a device for nondestructive testing of the quality of a conductive material based on resistance parameters.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; continuously collecting the information of the detection material, and judging the quality of the conductive material according to the continuously collected information and the calculated resistance parameter; the information includes but is not limited to voltage, current and position, the information is continuous information, and the continuous information is information for continuously collecting different positions of the detection material; the resistance parameters comprise resistance and/or resistivity, and are obtained by calculating voltage or current information and size information of a material in a detection area; comparing the actual resistance parameter with the standard sample resistance parameter, judging that the area corresponding to the actual resistance parameter has a defect when the absolute resistance parameter-the standard sample resistance parameter/the standard sample resistance parameter is greater than or equal to a defect judgment threshold value, and judging that the quality of the area corresponding to the actual resistance parameter is qualified when the absolute resistance parameter-the standard sample resistance parameter/the standard sample resistance parameter is less than the defect judgment threshold value; during detection, the detection device and the detection material move relatively.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the relative movement includes the following three cases: the detection device is static, detects the movement of the material and is mainly used for detecting the material produced by the process; the detection device moves, the detection material is static, and the detection device is mainly used for detecting the material which is difficult to move; the detection device and the detection material move at different speeds simultaneously and are mainly used for assisting in adjusting the information acquisition frequency and detecting a specific area; the relative movement is preferably a continuous relative movement.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the detection device is contacted with the detection material through a contact end, and the contact mode includes but is not limited to point contact, array contact, line contact and surface contact; the contact area between any contact end and the detection material is less than or equal to 100mm2Preferably 25mm or less2More preferably, it isLess than or equal to 1mm2More preferably 0.01mm or less2。
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the contact end used for information acquisition is an information acquisition contact end, an area between the information acquisition contact ends is defined as an information acquisition area, the reverse direction of the detection material relative to the movement direction of the detection device is defined as an information acquisition direction, the 1 st information acquisition contact end in the information acquisition direction is defined as a positioning contact end, the state of acquiring the 1 st information is defined as an initial state, and in the initial state, the position of the detection material in contact with the positioning contact end is an information acquisition starting point (coordinate origin).
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the detection device automatically acquires information and calculates resistance parameters in the process of detecting the material entering and exiting the information acquisition area, and automatically draws a resistance parameter-distance curve.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the ordinate of the resistance parameter-distance curve is a resistance parameter, and the resistance parameter-distance curve is obtained by calculation according to the acquired voltage or current and the size information of the measured area material; when the resistance parameter is resistance, calculating to obtain actual resistance according to the acquired voltage and current information, and when the resistance parameter is resistivity, calculating the resistivity according to the calculated actual resistance and the size information of the measured area material; the calculation employs at least one of the following formulas:
resistance (Ω) is voltage (V) ÷ current (a);
resistivity (Ω · m) is resistance (Ω) × cross-sectional area (m)2) Length (m).
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the abscissa of the resistance parameter-distance curve is the distance between the contact position of the detection material and the positioning contact end and the information acquisition starting point; the distance may be obtained by direct measurement, or by calculation based on time and velocity parameters.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the resistance parameter-distance curve reflects the quality information of the measured material, and the resistance parameter-distance curve is abnormal and returns to normal, and enters and leaves the information acquisition area corresponding to defects. FIG. 1 is a schematic diagram of a resistance parameter-distance curve corresponding to a defect and a position of a detected material, wherein state A is a state in which the defect is about to enter an information acquisition area, the information acquisition area is free from defects when the detected material moves from an initial state to state A, the resistance parameter-distance curve correspondingly has an OA section, the resistance parameter is a normal state, and the distance between the corresponding position of a point A on the detected material and the information acquisition initial point is 50 mm; the state B is a state that the defect just completely enters the information acquisition area, the measured material moves from the state A to the state B, the defect goes through the processes of starting to enter and completely entering the information acquisition area, the resistance parameter-distance curve correspondingly has an AB section, the resistance parameter is abnormal, and the distance between the corresponding position of the point B on the detection material and the information acquisition starting point is 60 mm; the C state is a state that the defect is about to leave the information acquisition area, a BC section appears on a resistance parameter-distance curve in the process that the measured material moves from the B state to the C state, the resistance parameter is relatively constant, and the distance between the corresponding position of a C point on the detected material and the information acquisition starting point is 90 mm; the state D is the state that the defect leaves the information acquisition area, the resistance parameter gradually returns to normal in the process that the detection material moves from the state C to the state D, and the distance between the corresponding position of the point D on the detection material and the information acquisition starting point is 96 mm.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; and under a small part of conditions, detecting that the front end of the material has a defect, wherein the resistance parameter of the resistance parameter-distance curve starting point is an abnormal parameter, or detecting that the tail end of the material has a defect, and the resistance parameter of the resistance parameter-distance curve ending point is an abnormal parameter.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the continuously acquired information can also comprise time and temperature, and when the acquired information comprises time, a resistance parameter-position-time curve can be obtained according to the resistance parameter, the position and the time.
Those skilled in the art can obtain the information according to the present invention and perform mathematical processing, theoretical calculation, physical meaning conversion, etc., and the essence thereof also falls within the scope of the present invention.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; r for the defect judgment thresholdrIs represented by the formula RrThe value of (a) is 0.0001 or more, preferably 0.0001 to 0.1, more preferably 0.0001 to 0.01, and further preferably 0.0001 to 0.001.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the actual position and the defect length of the defect on the detection material can be determined according to the abscissa of the starting point and the ending point of the regression normal of the resistance parameters, and the significance degree of the defect can be determined according to the difference value of the maximum value (or the minimum value) of the resistance parameters and the resistance parameters of the standard sample; FIG. 2 is a schematic diagram of a resistance parameter-distance curve, wherein the actual resistance parameter is represented by Y, and the resistance parameter of the standard sample is represented by YsIs represented by Ys±(Rr×Ys) The range of normal resistance parameters is the error range, and the error range mainly considers the measurement error of the system; as shown in FIG. 2, the resistance parameter Y of the AB segment and BC segment satisfies | Y-Ys|＜Rr×YsThe corresponding material region is free of defects; the resistance parameter Y of the point C satisfies | Y-Ys|＝Rr×Ys，Y＝YcThe actual resistance parameter is at a critical value YcEntering the information acquisition area corresponding to the defect; the resistance parameter Y of the CD section satisfies Y-Ys|≥Rr×YsThe actual resistance parameter exceeds the normal parameter range, and the corresponding defect gradually enters the information acquisition area; the resistance parameter Y value of the DF segment is relatively constant, and ideally, Y is equal to YmThe actual resistance parameter is at the maximum value, and the corresponding defect is completely positioned in the information acquisition area; the actual resistance parameter of the FG section continuously decreases, the corresponding defect gradually leaves the information acquisition area, the abscissa of the point F is the distance between the starting point of the contact between the defect and the positioning contact end and the information acquisition starting point, the abscissa of the point G is the distance between the ending point of the contact between the defect and the positioning contact end and the information acquisition starting point, and the difference value of the abscissas between the point F and the point G is the defect length; the resistance parameter Y of the G point satisfies | Y-Ys|＝Rr×Ys，Y＝YcThe actual resistance parameter is at a critical value Yc(ii) a The resistance parameters Y of the GH section and the HI section satisfy Y-Ys|＜Rr×YsAnd in the normal parameter range, the corresponding material area has no defect.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; when the actual resistance parameter-standard sample resistance parameter/standard sample resistance parameter is greater than or equal to RrThen, it is judged that the material of the measured region includes at least 1 or 1 defect, and R is calculatedySaid R isy＝(Ym-Ys)÷YsSaid Y issAs a resistance parameter of the standard sample, the YmIs the maximum or minimum value of the actual resistance parameter, RyIs a defect determination factor.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; when the actual resistance parameter-standard sample resistance parameter/standard sample resistance parameter is greater than or equal to RrThen, the factor R is determined according to the defectyThe defect type can be judged; when R isyWhen the defect type is more than 0, the defect type comprises but is not limited to scratches, depressions, smaller sizes, tears, cracks, corrosion, slag inclusion, bubbles and indentations, the defect types of different materials are different, in a metal material, possible defect types comprise scratches, depressions, smaller sizes, cracks, corrosion, slag inclusion, bubbles, indentations and the like, in a carbon fiber material, possible defect types comprise smaller fiber volume content, disordered fiber orientation and arrangement mode, smaller bundle number, broken filaments, insufficient plating material, incomplete carbonization and the like, and in a welded steel pipe, possible defect types comprise size defects, craters, incomplete penetration, incomplete fusion, undercut and the like; when R isyIf < 0, the defect types include but are not limited to bulge, lug, bend, large size, different material defect types, in metal materials, possible defect types include bulge, lug, bend, burr, adhesion, large size and the like, in long carbon fiber materials, possible defect types include large fiber volume content, large bundle number, excessive plating material and the like, in welded steel pipes, possible defect types include solder bulgeFlash, fraying, burrs, and the like.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the defect number can be judged by analyzing the change condition of the resistance parameter-distance curve; generally, the resistance parameter-distance curve is abnormal once and returns to normal, and at least 1 or 1 defect in the material in the corresponding area can be judged; in a few cases, the resistance parameter-distance curve is abnormal and returns to normal repeatedly, or the change rate is increased or reduced suddenly, and at least 2 or 2 defects in the corresponding area can be judged; in rare cases, the resistance parameter-distance curve is abnormal and returns to normal repeatedly, and finally the normal parameter range can not be returned, and the condition that a large number of defects exist in the corresponding area or the physical boundary of the detection material is obtained through information acquisition is judged.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the method can detect the continuous occurrence of various defects, the resistance parameter-distance curve is abnormal and does not return for a long time or does not return until the detection is finished, and whether 2 or more than 2 defects exist in the detected region is judged according to the slope of the resistance parameter-distance curve and the change condition of the slope.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; defects that cause a change in the resistance of a material, including but not limited to a change in the resistivity, a change in the cross-sectional area of the material, are among the types of defects detectable by the present method; when the defect is of a type having a reduced cross-sectional area, the reduction in cross-sectional area causes the resistance to become large, and the resistance-distance curve rises, as shown in FIG. 3, Y in FIG. 3mIs the maximum value of the actual resistance, Ym＞Ys，RyIs greater than 0; when the defect is of the type having an increased cross-sectional area, the resistance decreases due to the increase in cross-sectional area, and the resistance-distance curve decreases as shown in FIG. 4, Y in FIG. 4mIs the minimum value of the actual resistance, Ym＜Ys，Ry＜0；YmAnd YsThe difference in (b) reflects the severity of the defect.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the resistance parameter of the standard sample is measured by adopting the standard sample, the standard sample can be determined according to a standard, and the standard is a national standard, an industrial standard or an enterprise standard.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the standard resistance parameter can also be determined by a user, or detected and/or calculated according to a standard determined by the user.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; when the resistance parameters of the standard sample are acquired, the detection environment of the standard sample is the same as the actual detection environment, and the detection environment comprises but is not limited to temperature, pressure, humidity and noise.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the applicable temperature range is 10K-the melting temperature or the liquefaction temperature or the gasification temperature of the material to be measured.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the cross-sectional area of the conductive material is 1000000mm or less2Preferably 10000mm or less2More preferably 100mm or less2Still more preferably not more than 1mm2More preferably 0.01mm or less2。
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the voltage or current information acquisition method includes, but is not limited to, a direct current four-point method, a single bridge method and a double bridge method.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; among the contact ends, the distance between the contact ends for collecting information is less than or equal to 3000mm, preferably less than or equal to 1000mm, more preferably less than or equal to 500mm, and even more preferably less than or equal to 100 mm; for high-precision detection requirements, it is still more preferable that the thickness is 50mm or less or 25mm or less.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; during detection, the relationship among the information acquisition frequency, the relative movement speed between the detection material and the detection device and the distance between the information acquisition contact ends is as follows: the relative movement speed ÷ information acquisition frequency < the information acquisition contact end distance can ensure that all areas of the material to be detected can be detected, the acquired information samples are enough for analysis, and the smaller the relative movement speed is, the larger the acquisition frequency is, and the more the acquired information samples are.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; the information acquisition frequency is equal to or greater than 1/10 seconds, preferably equal to or greater than 1/second, and more preferably equal to or greater than 10/second. The information acquisition frequency can also be set according to the length of the information acquisition interval, and within the 10mm information acquisition interval, the information acquisition frequency is more than or equal to 1 time, preferably more than or equal to 10 times, and more preferably more than or equal to 100 times; the information acquisition frequency can also be optimized and adjusted according to the relative movement speed of the detection material and the detection device and the characteristics of the information acquisition device.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; for two-dimensional detection materials such as plates, strips and foils and three-dimensional detection materials such as blocks and bodies, the characteristics of the defects in different directions can be judged according to resistance parameters in different detection directions.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; when the defect enters and leaves the information acquisition area, the corresponding resistance parameters have a certain mapping relation, and the information acquisition system can be checked according to the mapping relation; as shown in FIG. 2, the BD segment corresponds to the defect entering the information acquisition zone, the FH segment corresponds to the defect leaving the information acquisition zone, and the resistance parameters of the BD segment and the FH segment ideally map to each other, i.e., for any point (X, Y) on the BD(X)) And mapped point on FH (X + l, Y)(X+l)) Existence of a relationship Y(X)'＝-Y(X+l)', wherein l is the length of the information acquisition region.
The invention relates to a method for nondestructive testing of the quality of a conductive material based on resistance parameters; there are many defect determination methods, and any defect determination method based on the present invention is considered to fall within the scope of protection of the present patent.
Based on the detection idea of the invention, the directly obtained information or the parameters obtained by conversion have advantages in application under different materials and different precision requirements.
The invention relates to a device for nondestructive testing of the quality of a conductive material based on resistance parameters; the device comprises P independent detection units, and the P units can be completely or partially contacted with a detection material during detection; the detection unit can be static or move according to a designed track, the detection material can also be static or move according to a designed track, and the detection unit and the detection material can move relatively; and P is an integer greater than or equal to 1.
The invention relates to a device for nondestructive testing of the quality of a conductive material based on resistance parameters; when the direct-current four-point method is adopted to detect the voltage information, each detection unit comprises 4 binding posts which are arranged side by side, a constant current providing module, a temperature measuring module and an information acquisition module; among the 4 wiring columns, 2 wiring columns at two ends are connected with the constant current providing module through a lead, and the 2 wiring columns in the middle are connected with the information acquisition module through leads; the temperature measurement module is connected with the information acquisition module.
The invention relates to a device for nondestructive testing of the quality of a conductive material based on resistance parameters; the terminal is connected with the contact end and has a resistivity of 2 × 10 or less-7Ω · m, preferably 4 × 10 or less-8Ω · m, more preferably 2 × 10 or less-8Omega.m; the contact terminals include, but are not limited to, conductive bars, conductive balls, conductive probes.
The invention relates to a device for nondestructive testing of the quality of a conductive material based on resistance parameters; and a pressure sensing device is arranged between the wiring terminal and the contact end and is used for adjusting the contact pressure of the contact end and the material so as to prevent the detection sample from being damaged due to overlarge contact pressure or poor contact due to undersize contact pressure.
Compared with the prior art, the invention provides a technical scheme for nondestructive testing of the quality of the conductive material based on resistance parameters, which has the technical advantages that:
1. the invention can realize the on-line continuous detection of the conductive material, and the detection device and the detection material can have various relative movement modes, thereby having great practical value for on-line detection.
2. The invention can detect various materials, is suitable for different detection places, can realize the on-line detection of different temperature environments, and can carry out the conversion of resistance parameters at different temperatures.
3. The invention can be used for detecting the defects causing resistance change, not only can detect the surface defects, but also can detect the internal defects, especially can detect the coexistence of 2 or more than 2 defects, and the prior art can not realize the function.
Drawings
FIG. 1 is a schematic diagram of a resistance parameter-distance curve corresponding to the defect and position of a material to be measured;
FIG. 2 is a schematic diagram of a resistance parameter versus distance curve;
FIG. 3 is a schematic resistance-distance curve with reduced defects in cross section;
FIG. 4 is a schematic resistance-distance curve of a cross-sectional grown defect;
FIG. 5 is a schematic view of the detection device of the present invention, wherein 1 is an information acquisition module; 2 is a binding post; 3 is a binding post lifting device; 4 is a pressure sensor; 5 is a temperature measuring probe; 6 is a lead; 7 is a contact end;
FIG. 6 is a resistance-distance curve of example 1;
FIG. 7 is a photograph of a defect in example 1;
FIG. 8 is a resistance-distance curve of example 2;
FIG. 9 is a photograph of a defect in example 2;
FIG. 10 is a resistivity-distance curve for example 3;
FIG. 11 is a photograph of a defect in example 3;
FIG. 12 is a resistance versus distance curve for example 4;
FIG. 13 is a photograph of a defect in example 4;
FIG. 14 is a resistivity-distance curve for example 5;
FIG. 15 is a photograph of a defect in example 5;
FIG. 16 is a resistance versus distance curve for example 6;
FIG. 17 is a photograph showing a defect in example 6.
Fig. 18 is a resistance versus distance curve for comparative example 1.
Detailed Description
In the following embodiments, the detection environment temperature is 20 + -2 deg.C, and the contact area between the contact end and the detection material is less than or equal to 5mm2. The detection system automatically acquires voltage information, position information and size information in the relative movement of the detection material and the detection device, automatically calculates the resistance or resistivity, and draws a resistance-distance curve or a resistivity-distance curve.
Resistance calculation formula: resistance (Ω) is voltage (V) ÷ current (a);
resistivity calculation formula: resistivity (Ω · m) is resistance (Ω) × cross-sectional area (m)2) Length (m).
Example 1
Detection materials: a carbon tool steel saw blade with a cross section of 0.61mm 11.35mm and a length of 315 mm;
terminal spacing/information acquisition zone length: 30mm
Inputting a constant current: 0.2A
The relative motion mode is as follows: the detection device is static and detects the movement of the material;
relative movement speed: 20mm/s
Information acquisition frequency: 30 times/s
Standard sample resistance: 0.001224 omega
FIG. 6 is a graph of the resistance versus distance curve, R, obtainedr0.001634, based on | actual resistance-standard resistance |/standard resistance ≧ RrJudging that 1 defect exists, abnormally increasing the resistance within the position range of 193mm-195mm, and entering an information acquisition area corresponding to the defect, YmThe resistance returns to normal within the position range of 223mm-225mm under the condition of 0.001227 omega, the defect is determined to be in the position area of 223mm-225mm corresponding to the defect leaving information acquisition area, and the length of the defect area is 2 mm; defect decision factor Ry(0.001227-0.001224) ÷ 0.001224 ═ 0.002451, due to the decision factor RyGreater than 0, and the length of the defect area is smaller, and the saw blade is judged to be broken to cause cuttingThe area reduction defect, the photograph shown in FIG. 7, shows that the defect is a jaggy defect, resulting in a reduction in cross-sectional area.
Example 2
Detection materials: extruding an aluminum rod with the diameter of 9.5mm and the length of 1100 mm;
terminal spacing/information acquisition zone length: 120 mm;
inputting a constant current: 2.0A;
the relative motion mode is as follows: the detection device is static and detects the movement of the material;
relative movement speed: 50 mm/s;
information acquisition frequency: 50 times/s;
standard sample resistance: 0.00004769 Ω;
FIG. 8 is a graph of the resistance versus distance curve, R, obtainedr0.001321, based on | actual resistance-standard resistance |/standard resistance ≧ RrJudging that 1 defect exists, abnormally reducing the resistance within the position range of 533mm-550mm, entering an information acquisition area corresponding to the defect, and Ym0.00004715 omega, the resistance in the position range of 653mm-670mm returns to normal, corresponding to the defect leaving the information acquisition area, the defect is determined to be in the position area of 653mm-670mm, and the length of the defect area is 17 mm; defect decision factor Ry(0.00004715-0.00004769) ÷ 0.00004769 ═ 0.01132, and since Ry < 0, the defect type was judged to be a bulge generated during the pressing process, and the photograph shown in fig. 9 shows that the defect is a bulge.
Example 3
Detection materials: extruding an aluminum rod material, wherein the diameter is 9.5mm, and the length is 1100 mm;
terminal spacing/information acquisition zone length: 120 mm;
inputting a constant current: 2.0A;
the relative motion mode is as follows: the detection device is static and detects the movement of the material;
relative movement speed: 50 mm/s;
information acquisition frequency: 50 times/s;
standard sample resistivity: 2.8171X 10-8Ω·m；
The procedure was as in example 2 except that the standard resistance parameter was resistivity.
FIG. 10 is a graph of the resistivity versus distance curve, R, obtainedr0.001321, according to the ratio of actual resistivity-standard resistivity/standard resistivity ≧ RrJudging that 1 defect exists, abnormally reducing the resistivity within the position range of 533mm-550mm, entering an information acquisition area corresponding to the defect, and Ym＝2.7853×10-8Omega m, the resistivity in the position range of 653mm-670mm returns to normal, the defect leaves the information acquisition area correspondingly, the defect is determined to be in the position area of 653mm-670mm, and the length of the defect area is 17 mm; defect decision factor Ry＝(2.7853×10-8-2.8171×10-8) 2.8171 x 10-8 ═ 0.01129, and since Ry < 0, the defect type was judged to be a bump defect generated during the pressing process, and the photograph shown in fig. 11 shows that the defect was a bump.
Example 4
Detection materials: extruding an aluminum rod material, wherein the diameter is 9.5mm, and the length is 1500 mm;
terminal spacing/information acquisition zone length: 120 mm;
inputting a constant current: 2.0A;
the relative motion mode is as follows: the detection device is static and detects the movement of the material;
relative movement speed: 50 mm/s;
information acquisition frequency: 50 times/s;
standard sample resistance: 0.00004769 Ω;
FIG. 12 is a graph showing the resistance-distance curves obtained, Rr0.001321, based on | actual resistance-standard resistance |/standard resistance ≧ RrJudging that 1 defect exists, abnormally increasing the resistance within the position range of 438mm-468mm, and entering an information acquisition area corresponding to the defect, Ym0.00004793 omega, the resistance in the position range of 558mm-588mm returns to normal, the defect leaves the information acquisition area, the defect is determined to be in the position area of 558mm-588mm, and the length of the defect area is 30 mm; determination factor Ry(0.00004793-0.00004769) ÷ 0.00004769 ═ 0.005033, since R isyIf it is > 0, the defect type is judged to be a scratch or slag inclusion defect, and the photograph shown in FIG. 13 shows that the defect is a scratch.
Example 5
Detection materials: extruding an aluminum rod material, wherein the diameter is 9.5mm, and the length is 1100 mm;
terminal spacing/information acquisition zone length: 120 mm;
inputting a constant current: 2.0A;
the relative motion mode is as follows: the detection device is static and detects the movement of the material;
relative movement speed: 50 mm/s;
information acquisition frequency: 50 times/s;
standard sample resistivity: 2.8171X 10-8Ω·m；
The procedure was as in example 4 except that the standard resistance parameter was resistivity.
FIG. 14 is a graph of the resistivity versus distance curve, R, obtainedr0.001321, according to the ratio of actual resistivity-standard resistivity/standard resistivity ≧ RrJudging that 1 defect exists, abnormally increasing the resistivity within the position range of 438mm-468mm, and entering an information acquisition area corresponding to the defect, Ym＝2.8310×10-8Omega m, the resistivity in the position range of 558mm-588mm returns to normal, the defect leaves the information acquisition area correspondingly, the defect is determined to be in the position area of 558mm-588mm, and the length of the defect area is 30 mm; defect decision factor Ry＝(2.8310×10-8-2.8171×10-8)÷2.8171×10-80.004934 due to RyIf > 0, the defect is judged to be a scratch, and the photograph shown in FIG. 15 shows that the defect is a scratch.
Example 6
Detection materials: an aluminum alloy wire with the diameter of 5mm and the length of 1400 mm;
terminal spacing/information acquisition zone length: 100 mm;
inputting a constant current: 0.55A;
the relative motion mode is as follows: the detection device is static and detects the movement of the material;
relative movement speed: 30 mm/s;
information acquisition frequency: 60 times/s;
standard sample resistance: 0.1442m Ω;
FIG. 16 shows the obtained resistance-distance curve, Rr0.001665, based on | actual resistance-standard resistance |/standard resistance ≧ RrJudging that there is a defect, and the resistance within the position range of 710mm to 764mm rises abnormally and enters the information acquisition area in response to the defect, Ym0.1463m omega, the resistance in the position range of 810mm-864mm returns to normal, the defect leaves the information acquisition area, the defect is determined in the position area of 810mm-864mm, and the length of the defect area is 54 mm; defect decision factor Ry(0.1463-0.1442) ÷ 0.1442 ═ 0.01456, since R isyAnd if the defect area is longer than 0, judging the defect type to be a scratch.
It was further found that the slope of the obtained resistance-distance curve in the abnormally rising and falling phases changed significantly, with a slope of about 2.94X 10 in the rising phase in the position range from 710mm to 734mm-5m omega/mm, the ascending slope is about 0.00036m omega/mm in the position range of 760mm-764mm, and the descending slope is about-2.94 x 10 in the position range of 810mm-834mm-5m Ω/mm, within a 860mm-864mm position range, the slope of the descent phase is about-0.00036 m Ω/mm, where the defect is judged to be composed of two types of defects, the first defect having a smaller absolute slope and a longer length, most likely a scratch, the second defect having a larger absolute slope and a shorter length, most likely an indentation or bubble, and the middle plateau between the two slopes having a length of 26mm, indicating that the two defects are about 26mm apart, and the photograph of fig. 17 shows that the defects are scratches and indentations.
Comparative example 1
The detection mode is as follows: carrying out segmented discrete detection;
detection materials: an aluminum alloy wire rod, which is 5mm in diameter and 1400mm in length, was made of the same test material as in example 6;
terminal spacing/information acquisition zone length: 100 mm;
inputting a constant current: 0.55A;
resistance parameters of the standard sample: resistance 0.1442m Ω;
FIG. 18 is a graph showing the resistance-distance curves obtained, Rr0.001665, since the middle 2 posts are 100mm apart, it needs to measure 14 times, and the result of each measurement is the average result of 100mm segment, according to the | actual resistance-standardThe sample resistance/standard sample resistance is not less than RrAnd judging that the 800mm-900mm position area has defects, and because only 14 discrete data points can not determine the intensity and the length of the defects, the possible defect types can not be judged. Example 6 detected defects in the 810mm-864mm range and analyzed two types of defects, whereas this comparative example was not detectable.
The comparative example shows the disadvantages of discrete detection: the method has the advantages of needing to be divided in advance, having many detection times, being slow in detection speed, being unobvious in information, being inaccurate in positioning, being incapable of further distinguishing types, being incapable of detecting the condition of extremely small defects and the like.
Claims (14)
1. A method for nondestructive testing of the quality of a conductive material based on resistance parameters is characterized in that: continuously collecting information of the detection material, and judging the quality of the detection material according to the continuously collected information and the calculated resistance parameter; the information includes but is not limited to voltage, current and position, the information is continuous information, and the continuous information is information for continuously collecting different positions of the detection material; the resistance parameters comprise resistance and/or resistivity, and are obtained by calculating voltage or current information and size information of a material in a detection area; comparing the obtained actual resistance parameter with the standard sample resistance parameter, judging that the area corresponding to the obtained actual resistance parameter has a defect when the absolute actual resistance parameter-standard sample resistance parameter/standard sample resistance parameter is greater than or equal to a defect judgment threshold value, and judging that the quality of the area corresponding to the obtained actual resistance parameter is qualified when the absolute actual resistance parameter-standard sample resistance parameter/standard sample resistance parameter is less than the defect judgment threshold value; during detection, the detection device and the detection material move relatively.
2. The method for nondestructive testing of the quality of the conductive material based on the resistance parameter as claimed in claim 1, wherein: r for the defect judgment thresholdrIs represented by the formula RrThe value of (a) is 0.0001 or more, preferably 0.0001 to 0.1, more preferably 0.0001 to 0.01, and further preferably 0.0001 to 0.001.
3. The method for nondestructive testing of the quality of the conductive material based on the resistance parameter as claimed in claim 1 or 2, wherein: when the actual resistance parameter-standard sample resistance parameter/standard sample resistance parameter is greater than or equal to RrThen, it is judged that the material of the measured region includes at least 1 or 1 defect, and R is calculatedySaid R isy＝(Ym-Ys)÷YsSaid Y issAs a resistance parameter of the standard sample, the YmIs the maximum or minimum value of the actual resistance parameter, RyIs a defect judgment factor; ry> 0, defect types include, but are not limited to, scratches, pits, undersize, tears, cracks, corrosion, slag inclusions, bubbles, indentations, RyBelow 0, defect types include, but are not limited to, bumps, ears, bends, and large sizes.
4. The method for nondestructive testing of the quality of the conductive material based on the resistance parameter as claimed in claim 1, wherein: the resistance parameter of the standard sample is the resistance parameter of the standard sample; the standard may be determined according to a standard, which may be a national standard, an industry standard, or an enterprise standard.
5. The method for nondestructive testing of the quality of the conductive material based on the resistance parameter as claimed in claim 1, wherein: the standard resistance parameter can also be determined by a user, or detected and/or calculated according to a standard determined by the user.
6. The method for nondestructive testing of the quality of the conductive material based on the resistance parameter as claimed in claim 4 or 5, wherein: when the resistance parameters of the standard sample are obtained through detection, the detection environment is the same as the actual detection environment, and the detection environment comprises but is not limited to temperature, pressure, humidity and noise.
7. The method for nondestructive testing of the quality of the conductive material based on the resistance parameter as claimed in claim 1, wherein: the voltage or current information acquisition method includes, but is not limited to, a direct current four-point method, a single bridge method and a double bridge method.
8. The method of claim 7, wherein the quality of the conductive material is non-destructively tested based on the resistance parameter; the detection device is contacted with the detection material through a contact end, and the contact mode includes but is not limited to point contact, array contact, line contact and surface contact; the contact area between the contact end and the detection material is less than or equal to 100mm2Preferably 25mm or less2More preferably 1mm or less2More preferably 0.01mm or less2。
9. The method of claim 8, wherein the method comprises the steps of: in the contact ends, the distance between the contact ends for information acquisition is less than or equal to 3000mm, preferably less than or equal to 1000mm, more preferably less than or equal to 500mm, still more preferably less than or equal to 100mm, and yet still more preferably less than or equal to 50mm or less than or equal to 25 mm.
10. The method for nondestructive testing of the quality of the conductive material based on the resistance parameter as claimed in claim 1, wherein: during detection, the relationship among the information acquisition frequency, the relative movement speed between the detection material and the detection device and the distance between the information acquisition contact ends is as follows: the relative movement speed is divided by the information acquisition frequency and is less than the distance between the information acquisition contact ends; the information acquisition frequency is equal to or greater than 1/10 seconds, preferably equal to or greater than 1/second, and more preferably equal to or greater than 10/second.
11. The method for nondestructive testing of the quality of the conductive material based on the resistance parameter as claimed in claim 1, wherein: the cross-sectional area of the conductive material is 1000000mm or less2Preferably 10000mm or less2More preferably 100mm or less2Still more preferably not more than 1mm2More preferably 0.01mm or less2。
12. The utility model provides a device based on electrically conductive material quality of resistance parameter nondestructive test which characterized in that: the device comprises P independent detection units, and the P units can be completely or partially contacted with a detection material during detection; the detection unit can be static or move according to a designed track, and the detection material can also be static or move according to a designed track; the detection unit and the detection material can move relatively; and P is an integer greater than or equal to 1.
13. The apparatus of claim 12, wherein the apparatus for nondestructive testing of the quality of the conductive material based on the resistance parameter comprises: when the direct-current four-point method is adopted to detect the voltage information, each detection unit comprises 4 binding posts which are arranged side by side, a constant current providing module, a temperature measuring module and an information acquisition module; among the 4 wiring columns, 2 wiring columns at two ends are connected with the constant current providing module through a lead, and the 2 wiring columns in the middle are connected with the information acquisition module through leads; the temperature measurement module is connected with the information acquisition module.
14. The apparatus of claim 13, wherein the apparatus for nondestructive testing of the quality of the conductive material based on the resistance parameter comprises: the binding post is connected with the contact end, and the resistivity of the binding post is less than or equal to 2 x 10-7 omega.m, preferably less than or equal to 4 x 10-8 omega.m, and more preferably less than or equal to 2 x 10-8 omega.m; the contact terminals include, but are not limited to, conductive bars, conductive balls, conductive probes.
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| CN117368281A (en) * | 2023-10-26 | 2024-01-09 | 浙江大学 | Method and equipment for monitoring defects of carbon fiber composite material in-situ additive manufacturing in real time |
| CN117689661A (en) * | 2024-02-02 | 2024-03-12 | 深圳市安保医疗感控科技股份有限公司 | Method and system for detecting coating defects on surface of medical breathable material |
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