CN111289386A - Device and method for testing wafer bonding shear strength - Google Patents
Device and method for testing wafer bonding shear strength Download PDFInfo
- Publication number
- CN111289386A CN111289386A CN202010156728.9A CN202010156728A CN111289386A CN 111289386 A CN111289386 A CN 111289386A CN 202010156728 A CN202010156728 A CN 202010156728A CN 111289386 A CN111289386 A CN 111289386A
- Authority
- CN
- China
- Prior art keywords
- bonding
- wafer bonding
- shear strength
- wafer
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/24—Investigating strength properties of solid materials by application of mechanical stress by applying steady shearing forces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/0001—Type of application of the stress
- G01N2203/0003—Steady
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/0014—Type of force applied
- G01N2203/0025—Shearing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/025—Geometry of the test
- G01N2203/0252—Monoaxial, i.e. the forces being applied along a single axis of the specimen
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/06—Indicating or recording means; Sensing means
- G01N2203/067—Parameter measured for estimating the property
- G01N2203/0676—Force, weight, load, energy, speed or acceleration
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Micromachines (AREA)
Abstract
The application relates to a device and a method for testing wafer bonding shear strength. The wafer bonding shear strength testing device comprises a carrier; a blocking platform is arranged on the carrier; the carrier is used for placing a chip to be tested; the blocking table is used for blocking the movement of the wafer bonding bottom layer structure of the chip to be detected; the wafer bonding bottom layer structure comprises various bonding structure layers which are sequentially stacked on the lower surface of the current bonding structure layer to be tested; the upper surface of the carrier is attached to the lower surface of the wafer bonding bottom layer structure, and the wall surface of the blocking table is attached to the side face, away from the contact tool, of the wafer bonding bottom layer structure, so that the test equipment can test the shear strength of the current bonding structure layer to be tested through the contact tool, and the bonding shear strength can be obtained. The method and the device are suitable for testing the shearing strength of the large-area wafer bonding and the multilayer bonding of the MEMS device, and can meet the requirement for testing the shearing strength of the wafer bonding of the MEMS.
Description
Technical Field
The application relates to the technical field of shear strength testing, in particular to a device and a method for testing wafer bonding shear strength.
Background
A Micro-Electro-Mechanical-System (MEMS) is manufactured by combining a Micro-machining process on the basis of a Micro-electronic manufacturing technology, and typical MEMS devices may include an accelerometer, a gyroscope, a pressure sensor, a microphone, a Micro-mirror, and the like; the mechanical support is the main function of bonding the MEMS wafer and has the characteristic of high mechanical strength. And the mechanical strength is an important characteristic parameter of the bonding of the MEMS wafer, and comprises shear strength, tensile strength and the like. At present, the mechanical strength evaluation test for bonding of MEMS wafers is mainly a shear strength test.
In the implementation process, the inventor finds that at least the following problems exist in the conventional technology: the traditional test method is to bond the MEMS chip on a base through an adhesive, and test the MEMS chip through a thrust shearing method by utilizing instruments such as a tension-shear instrument and the like. However, the bonding strength of the MEMS wafer is high and much greater than the bonding strength of the adhesive, and the conventional method is only suitable for testing the shear strength of the bonding of the chip and cannot meet the requirement of testing the bonding shear strength of the MEMS wafer.
Disclosure of Invention
In view of the above, it is necessary to provide a wafer bonding shear strength testing apparatus and a testing method that can satisfy the requirements of the wafer bonding shear strength testing.
In order to achieve the above object, in one aspect, an embodiment of the present invention provides a device for testing a wafer bonding shear strength, including a carrier; a blocking platform is arranged on the carrier;
the carrier is used for placing a chip to be tested; the blocking table is used for blocking the movement of the wafer bonding bottom layer structure of the chip to be detected; the wafer bonding bottom layer structure comprises various bonding structure layers which are sequentially stacked on the lower surface of the current bonding structure layer to be tested;
the upper surface of the carrier is attached to the lower surface of the wafer bonding bottom layer structure, and the wall surface of the blocking table is attached to the side face, away from the contact tool, of the wafer bonding bottom layer structure, so that the test equipment can test the shear strength of the current bonding structure layer to be tested through the contact tool, and the bonding shear strength can be obtained.
In one embodiment, the upper surface of one end of the carrier is provided with a blocking platform so that the longitudinal section of the carrier is step-shaped;
the blocking table is used for blocking the horizontal movement of the wafer bonding bottom layer structure.
In one of the embodiments, the first and second electrodes are,
the carrier and the blocking platform are of an integrated structure; or
The carrier is fixedly connected with the blocking table through a connecting piece.
In one embodiment, the height of the blocking table is determined according to the wafer bonding structure of the chip to be tested;
the wafer bonding structure comprises a multilayer stacking structure; the number of layers of the multilayer stack is at least 3.
In one embodiment, the wafer bonding structure is a multilayer stacking structure with regular edges;
the height of the blocking table is smaller than or equal to that of the wafer bonding bottom layer structure and is larger than that of the bonding structure layer close to the upper surface of the carrier in the wafer bonding bottom layer structure.
In one embodiment, the wafer bonding structure is a multilayer stacking structure with irregular edges;
the device also comprises a blocking flat plate arranged on the blocking table;
the barrier flat plate is used for blocking the movement of the bonding structure layer with irregular edges in the wafer bonding bottom layer structure;
and the wall surface of the barrier flat plate is attached to the side surface, away from the contact tool, of the bonding structure layer with the irregular edge.
In one embodiment, a strip-shaped notch for screwing a screw is formed at one end of the barrier flat plate;
the screw hole is also included; the threaded hole is arranged at the corresponding position of the blocking table.
In one embodiment, the upper surface of the carrier is bonded to the lower surface of the wafer bonded substructure.
A wafer bonding shear strength test device comprises the wafer bonding shear strength test device which is fixed on a clamp.
A method for testing the bonding shear strength of a wafer comprises the following steps:
installing a chip to be tested on the wafer bonding shear strength testing device;
and carrying out a shear strength test on the corresponding bonding position of the chip to be tested to obtain the bonding shear strength.
One of the above technical solutions has the following advantages and beneficial effects:
the wafer bonding shear strength testing device comprises a blocking table which can be used for blocking the movement of a wafer bonding bottom layer structure of a chip to be tested, wherein the wafer bonding bottom layer structure comprises various bonding structure layers which are sequentially overlapped on the lower surface of the current bonding structure layer to be tested; specifically, the blocking table can be arranged on the carrier, the wafer bonding bottom layer structure can be fixed through the blocking table, the dependence on adhesive fixation is avoided, and the shear strength test of the current bonding structure layer to be tested is realized. The method and the device are suitable for testing the shearing strength of the large-area wafer bonding and the multilayer bonding of the MEMS device, and can meet the requirement for testing the shearing strength of the wafer bonding of the MEMS.
Drawings
The foregoing and other objects, features and advantages of the application will be apparent from the following more particular description of preferred embodiments of the application, as illustrated in the accompanying drawings. Like reference numerals refer to like parts throughout the drawings, and the drawings are not intended to be drawn to scale in actual dimensions, emphasis instead being placed upon illustrating the subject matter of the present application.
FIG. 1 is a schematic diagram of a small area wafer bonded MEMS structure;
FIG. 2a is a schematic diagram of the test requirements of a conventional bond shear-thrust method;
FIG. 2b is a schematic diagram of a conventional bonding shear-thrust method;
FIG. 3 is a schematic diagram of a large area wafer bonded MEMS structure;
FIG. 4 is a schematic diagram of a multilayer MEMS wafer bonding structure;
FIG. 5 is a schematic structural diagram of an apparatus for testing wafer bonding shear strength according to an embodiment;
FIG. 6 is a schematic structural diagram of a device for testing the wafer bonding shear strength in another embodiment;
FIG. 7 is a block diagram of an exemplary testing apparatus for edge-rule multi-level stack structures;
FIG. 8 is a block diagram of an exemplary apparatus for testing a multi-layered stack with irregular edges;
FIG. 9 is a flowchart illustrating a method for testing shear strength of wafer bonding in one embodiment.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element and be integral therewith, or intervening elements may also be present. The terms "distal", "one end", "bonded" and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The MEMS wafer bonding process is to connect the same or different materials together by anode bonding/fusion bonding and other technologies to form a multilayer structure. In the conventional test method, an MEMS chip (i.e., a chip to be tested) is fixed to a support via an adhesive, and an instrument capable of applying a thrust load is usedThe MEMS bonding surface is vertically arranged on the MEMS bonding surface under a microscope, the contact tool is uniformly applied to the upper layer structure of the MEMS bonding structure to obtain a force value for shearing the upper layer structure of the MEMS bonding, the force value is divided by the MEMS bonding area to obtain the shearing strength of bonding of a sample (namely a chip to be tested), for example, the shearing strength of the MEMS silicon-glass anodic bonding structure is tested by a tension-shear apparatus, and the unit is Mpa or gf/mum2。
Specifically, fig. 1 shows a small-area MEMS wafer-bonded MEMS structure (a wafer-bonded structure is shown in a black dotted frame, as a cross-sectional view, and the two are bonded together through the MEMS wafer), including a three-dimensional structure diagram and a cross-sectional structure diagram. When the traditional bonding shearing thrust method is adopted for testing, the testing requirement shown in fig. 2a needs to be met, meanwhile, the mode shown in fig. 2b is used for testing, the whole bottom surface of the bottom bonding structure of the MEMS chip is fixed on a substrate by using a strong adhesive, a cleaver of a tension-shearing instrument is aligned to the top layer structure of the MEMS bonding structure, force is uniformly applied in parallel, and force is continuously increased until the top layer structure of the MEMS bonding structure in fig. 2b is sheared off, and at the moment, the whole chip to be tested fixed by using the adhesive does not break away because the bonding area of the MEMS is small, and the testing is successful. It can be known that, for the MEMS structure bonded by the small-area MEMS wafer, although the bonding strength of the MEMS wafer is high, the bonding area is small and the required shearing force is small, so that the conventional bonding shearing thrust method can be used for testing.
The conventional method can test a small-area single-layer bonding sample of the MEMS device, however, in the implementation process, the inventor finds that at least the following problems exist in the conventional technology: on one hand, as shown in fig. 3, a bonding sample with high bonding strength and large area of the MEMS wafer cannot be tested in a conventional testing mode, the area of the whole MEMS device is equivalent to that of the MEMS wafer, the bonding strength of the MEMS wafer can reach hundreds of megapascals, the bonding strength of the adhesive is generally less than 20 megapascals, when the bonding area of the chip wafer to be tested is equivalent to that of the chip, the force for shearing the MEMS structure is greater than the force for shearing the adhesive, that is, the adhesive falls off before the MEMS bonding structure is sheared, and thus the shearing strength of the MEMS wafer bonding cannot be obtained.
On the other hand, as shown in fig. 4, the MEMS wafer bonding may have a multilayer structure, and the conventional test method cannot complete the shear strength test of a certain layer in the multilayer structure; for example, the MEMS wafer is bonded with a 4-layer structure, and when the bonding strength of the bottom layer bonding interface is lower than that of the 3 rd layer bonding interface, the bottom layer bonding structure will peel off before the 3 rd layer during testing, and the bonding strength of the 3 rd layer cannot be tested. Further, if the shear strength of the bonding between the 3 rd layer and the 4 th layer in fig. 4 needs to be tested, the test result is the lowest shear strength of all bonding surfaces and bonding surfaces according to the traditional bonding shear-thrust method; namely, the traditional bonding shear-thrust method is not suitable for the shear strength test of the multilayer bonding structure.
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The wafer bonding shear strength testing device provided by the application can be applied to the application environments shown in fig. 3 and 4. Wherein, fig. 3 is a schematic diagram (including a schematic diagram of three-dimensional and cross-sectional structures) of a MEMS structure of bonding a large-area MEMS wafer, and fig. 4 is a schematic diagram (including a schematic diagram of three-dimensional and cross-sectional structures) of bonding a multilayer MEMS wafer.
In one embodiment, as shown in fig. 5, a wafer bonding shear strength testing apparatus is provided, which is illustrated as being applied to a MEMS device having the structure shown in fig. 3 or fig. 4, and includes a carrier 100; a blocking table 200 is arranged on the carrier 100;
the carrier 100 is used for placing a chip to be tested; the blocking table 200 is used for blocking the movement of the wafer bonding bottom layer structure 310 of the chip to be detected; the wafer bonding bottom layer structure 310 comprises bonding structure layers which are sequentially stacked on the lower surface of the current bonding structure layer 320 to be tested;
the upper surface of the carrier 100 is attached to the lower surface of the wafer bonding underlying structure 310, and the wall surface of the blocking table 200 is attached to the side surface of the wafer bonding underlying structure 310 away from the contact tool, so that the test equipment can perform a shear strength test on the current bonding structure layer 320 to be tested through the contact tool to obtain the bonding shear strength.
Particularly, the wafer bonding shear strength testing device provided by the application is not only suitable for testing the bonding shear strength of a large-area MEMS wafer, but also suitable for testing the shear strength of an MEMS device with a multilayer bonding structure. As shown in fig. 5, the wafer bonding bottom layer structure 310 and the bonding structure layer 320 to be tested are both MEMS structures, and are bonded together through an MEMS wafer; obviously, the material of the wafer bonding underlying structure 310 shown in fig. 5 may be glass or silicon, and the material of the current bonding structure layer 320 to be tested is silicon.
Further, the wafer bonding underlying structure 310 may include bonding structure layers sequentially stacked on the lower surface of the current bonding structure layer 320 to be tested, that is, as shown in fig. 4, for an MEMS chip having a multilayer structure, when the bonding shear strength of the 3 rd layer in fig. 4 needs to be tested, the 3 rd layer is the current bonding structure layer to be tested, and the 1 st layer and the 2 nd layer sequentially stacked on the lower surface of the 3 rd layer are the wafer bonding underlying structure.
In the present application, the carrier 100 is not deformed and can be made of metal or other materials; the carrier 100 is provided with the blocking table 200, and the movement of the wafer bonding bottom layer structure 310 can be blocked by the blocking table 200, so that the fixation depending on an adhesive is avoided; as shown in fig. 5, the carrier 100 is used for placing a chip to be tested, the upper surface of the carrier 100 is attached to the lower surface of the wafer bonding underlying structure 310, and the wall surface of the blocking table 200 is attached to the side surface of the wafer bonding underlying structure 310 away from the contact tool, so that the test equipment can test the shear strength of the current bonding structure layer 320 to be tested through the contact tool, specifically, the contact tool can be located at the current bonding structure layer 320 to be tested, and then the force value cut by the MEMS bonding structure can be tested, thereby obtaining the bonding shear strength of the chip to be tested.
It should be noted that, in the present application, the structure shape of the blocking stage 200 is not particularly limited, and the blocking mechanism that can block the movement (along the moving direction of the contact tool) of the wafer bonding substructure 310 of the chip to be tested and can simultaneously attach the wall surface to the side surface of the wafer bonding substructure 310 away from the contact tool can be applied to the present application, for example, a concave stage shape, a concave groove shape, a step shape, a rectangular shape, and the like. Meanwhile, the height of the blocking table 200 may be determined according to the wafer bonding structure of the chip to be tested.
Further, the setting position of the blocking table 200 is not particularly limited in the present application, the blocking table 200 may be disposed on the carrier 100, and the blocking table 200 and the carrier 100 may be integrally processed or separately processed.
More than, wafer bonding shear strength testing arrangement that this application provided, including the platform that blocks that can be used for blockking the removal of the wafer bonding substructure of the chip that awaits measuring, it is concrete, should block that the platform can locate on the carrier, can realize fixing of wafer bonding substructure through blocking the platform, has avoided the reliance fixed to the adhesive, realizes the shear strength test to the bonding structure layer that awaits measuring at present. The method and the device are suitable for testing the shearing strength of the large-area wafer bonding and the multilayer bonding of the MEMS device, and can meet the requirement for testing the shearing strength of the wafer bonding of the MEMS.
In one embodiment, as shown in fig. 6, a wafer bonding shear strength testing apparatus is provided, which is illustrated as an example of the application of the apparatus to a MEMS device having the structure shown in fig. 3 or fig. 4, and includes a carrier 100; a blocking table 200 is arranged on the carrier 100;
the carrier 100 is used for placing a chip to be tested; the blocking table 200 is used for blocking the movement of the wafer bonding bottom layer structure 310 of the chip to be detected; the wafer bonding bottom layer structure 310 comprises bonding structure layers which are sequentially stacked on the lower surface of the current bonding structure layer 320 to be tested;
the upper surface of the carrier 100 is attached to the lower surface of the wafer bonding underlying structure 310, and the wall surface of the blocking table 200 is attached to the side surface of the wafer bonding underlying structure 310 away from the contact tool, so that the test equipment can perform a shear strength test on the current bonding structure layer 320 to be tested through the contact tool to obtain the bonding shear strength.
In a specific embodiment, as shown in fig. 6, the upper surface of one end of the carrier 100 is provided with a blocking stage 200 so that the longitudinal section of the carrier 100 is stepped; the blocking stage 200 is used to block the horizontal movement of the wafer bonding substructure 310.
Specifically, as shown in fig. 6, the longitudinal section of the carrier 100 is stepped; the carrier 100 includes a carrier step (i.e., the blocking stage 200) by which horizontal movement of the substructure (i.e., the wafer-bonded substructure 310) can be blocked, avoiding reliance on adhesive attachment. Further, the contact tool may be a riving knife.
For the MEMS chip with a multilayer structure, if the bonding shear strength of the 3 rd layer in fig. 6 needs to be tested, the cleaver (i.e., the contact tool) is located in the 3 rd layer structure, the 3 rd layer is the current bonding structure layer 320 to be tested, and the 1 st layer and the 2 nd layer stacked in sequence on the lower surface of the 3 rd layer are the wafer bonding bottom layer structure 310.
In one particular embodiment, the carrier 100 is a unitary structure with the baffle station 200; or the carrier 100 and the blocking table 200 are fixedly connected through a connecting member.
Specifically, the connecting piece can be a screw; taking fig. 6 as an example, the carrier step (i.e., the blocking table 200) and the carrier 100 may be integrally formed, or may be separately formed and fixed together by mechanical fixing means such as screws, as shown in fig. 5.
The application provides a testing device for bonding shear strength of an MEMS wafer, which can be made of metal materials such as aluminum and the like, wherein the plane of the testing device is a carrier 100 and comprises a carrier step (namely a blocking table 200); based on the testing device, one side of an MEMS testing sample (namely a chip to be tested) can be placed on a testing device carrier by being close to the edge of a carrier step (namely the wall surface of the blocking table 200), and the carrier step (namely the blocking table 200) can block the movement of the wafer bonding bottom layer structure 320, so that the shear strength test is realized.
In one example, the upper surface of the carrier 100 is bonded to the lower surface of the wafer bonded substructure 320.
Specifically, for better testing, the application proposes that a sample (i.e., a chip to be tested) can be fixed at a position close to the edge of a step of a carrier (i.e., the wall surface of the blocking table 200) through an adhesive, and then the corresponding bonding position is subjected to a shear strength test through instrument equipment (i.e., testing equipment) such as a tension-shear apparatus.
The wafer bonding shear strength testing device comprises a blocking table which can be used for blocking the movement of a wafer bonding bottom layer structure of a chip to be tested, wherein the wafer bonding bottom layer structure comprises various bonding structure layers which are sequentially stacked on the lower surface of the current bonding structure layer to be tested; specifically, the blocking table can be arranged on the carrier, the wafer bonding bottom layer structure can be fixed through the blocking table, the dependence on adhesive fixation is avoided, and the shear strength test of the current bonding structure layer to be tested is realized. The method and the device are suitable for testing the shearing strength of the large-area wafer bonding and the multilayer bonding of the MEMS device, and can meet the requirement for testing the shearing strength of the wafer bonding of the MEMS.
In one embodiment, as shown in fig. 7, a wafer bonding shear strength testing apparatus is provided, which is illustrated as an example of the application of the apparatus to a MEMS device having the structure shown in fig. 4, and includes a carrier 100; a blocking table 200 is arranged on the carrier 100;
the carrier 100 is used for placing a chip to be tested; the blocking table 200 is used for blocking the movement of the wafer bonding bottom layer structure 310 of the chip to be detected; the wafer bonding bottom layer structure 310 comprises bonding structure layers which are sequentially stacked on the lower surface of the current bonding structure layer 320 to be tested;
the upper surface of the carrier 100 is attached to the lower surface of the wafer bonding underlying structure 310, and the wall surface of the blocking table 200 is attached to the side surface of the wafer bonding underlying structure 310 away from the contact tool, so that the test equipment can perform a shear strength test on the current bonding structure layer 320 to be tested through the contact tool to obtain the bonding shear strength.
In one embodiment, the height of the block table 200 is determined according to the wafer bonding structure of the chip to be tested;
the wafer bonding structure may include a multi-layer stack structure; the number of layers of the multilayer stack is at least 3.
In one embodiment, as shown in FIG. 7, the wafer bonding structure is a regular-edge multi-layer stack structure;
the height of the blocking table 200 is less than or equal to the height of the wafer bonding underlying structure 310 and greater than the height of the bonding structure layer close to the upper surface of the carrier in the wafer bonding underlying structure 310.
Specifically, the wafer bonding shear strength testing device can be used for testing the bonding shear strength of a multilayer MEMS bonding structure, wherein the height of the blocking table 200 is determined according to the wafer bonding structure of a chip to be tested.
When the wafer bonding structure is a multilayer stack structure with regular edges, taking fig. 7 as an example, the MEMS device includes 4 layers of structures and 3 MEMS bonding interfaces, if the bonding shear strength between the 2 nd layer of structure and the 3 rd layer of structure needs to be tested, the height of the carrier step (i.e. the blocking stage 200) may be flush with the 2 nd layer of structure or slightly lower than the height of the 2 nd layer of structure (i.e. the height of the blocking stage 200 is less than or equal to the height of the wafer bonding underlying structure 310), but higher than the height of the 1 st layer of structure (i.e. the bonding structure layer close to the upper surface of the carrier in the wafer bonding underlying structure 310), and the cleaver is located in the 3 rd layer of structure.
In one embodiment, as shown in FIG. 8, the wafer bonding structure is a multilayer stack structure with irregular edges; further comprises a barrier flat plate 400 arranged on the barrier table 200;
the blocking flat plate 400 is used for blocking the movement of the bonding structure layer with irregular edges in the wafer bonding bottom layer structure 310; wherein the walls of the barrier plate 400 abut the side of the bonding structure layer having irregular edges away from the contact tool.
In one embodiment, the blocking plate 400 has a strip-shaped notch 420 formed at one end for the screw 410 to be screwed into; the screw hole is also included; threaded holes are provided at corresponding positions of the blocking table 200 (threaded holes are not shown in fig. 8).
In particular, the method can be applied to the interlayer bonding shear strength test of the multilayer MEMS wafer bonding structure with irregular edges. The following is described with reference to specific examples:
as shown in fig. 8, the test sample (i.e., the chip to be tested) may comprise a 4-layer structure; the material of the bottom layer structure (i.e. the bonding structure layer close to the upper surface of the carrier in the wafer bonding bottom layer structure 310) may be glass, and the thickness may be 500 um; the 2 nd layer, the 3 rd layer and the 4 th layer (namely, each bonding structure layer) of the test chip can be made of silicon, and the thickness of each silicon layer can be 200 um; as shown in fig. 8, the layers of each bonding structure layer are mechanically connected together by MEMS wafer bonding. Currently, the cleaver is located in the current bonding structure layer to be tested (i.e. the 3 rd layer), and the shear strength of bonding between the 2 nd and the 3 rd layers needs to be tested.
Further, as shown in fig. 8, the wafer bonding structure of the chip to be tested is a multilayer stacking structure with irregular edges; wherein, the bonding structure layer with irregular edges can be a layer 2; it should be noted that, if the current bonding structure layer to be tested is the 4 th layer, the 3 rd layer or the 2 nd layer may be set as the bonding structure layer with irregular edges, and a corresponding blocking table and/or a corresponding blocking flat plate are provided based on the present application, so as to complete the shear strength test, for example, the position of the blocking flat plate is moved, or the height of the blocking table is adjusted.
The test device provided by the application can comprise a carrier 100, a carrier step (namely, a blocking platform 200) and a flat plate step (namely, a blocking flat plate 400), wherein the carrier 100 and the carrier step are integrally processed, a base material can be aluminum, the thickness of the carrier can be 2cm, and the thickness of the carrier step (namely, the blocking platform 200) can be 0.5mm-0.05 mm; and the thickness of the plate step (i.e., the barrier plate 400) may be 0.25mm to 0.03 mm. Wherein, the step plate (i.e. the barrier plate 400) has a notch (i.e. a strip-shaped notch 420) as shown in fig. 8, the carrier 100 can be provided with a screw hole, and the step plate (i.e. the barrier plate 400) can be fixed by translation through the strip-shaped notch 420 and the screw hole.
During testing, firstly, fixing of a test sample (namely, a chip to be tested) needs to be completed, firstly, an adhesive is smeared on the bottom of the chip to be tested, then, the chip to be tested is placed in a manner of being attached to the edge of the step of the carrier (namely, the wall surface of the blocking flat plate 400), and after the adhesive is cured, the sample can be confirmed to be fixed.
Further, for a chip to be tested with an irregular edge, the barrier flat plate 400 can be fixed based on the application, so that the movement of the bonding structure layer with the irregular edge in the wafer bonding bottom layer structure 310 is blocked, and meanwhile, the wall surface of the barrier flat plate 400 is attached to the side surface of the bonding structure layer with the irregular edge, which is far away from the contact tool; as shown in fig. 8, the thickness of the blocking plate 400 may be 0.15mm, the blocking plate 400 is placed on the plane (i.e., the upper surface) of the blocking stage 200, the step plate is translated to the edge of the step plate to be attached to the edge of the layer 2 structure of the sample, and the blocking plate 400 is fixed on the carrier 100 by screws through the notches of the blocking plate 400 and the threaded holes of the blocking stage 200.
Further, the present application provides a fixing manner of the carrier, in which the carrier 100 with the test sample (i.e. the chip to be tested) fixed thereon is fixed on a shearing force device through a fixture on a tension-shear apparatus, for example;
based on the process, further completing the shear strength test, aligning a contact tool (such as a cleaver) to the 3 rd layer structure of the sample product under a microscope of the test equipment, setting instrument parameters, uniformly applying horizontal force, and measuring a force value F when the 2 nd layer structure and the 3 rd layer structure are bonded and sheared; furthermore, the bonding area S of the MEMS wafer of the test sample can be obtained, and F/S is the shear strength of the bonding of the MEMS wafer of the test sample.
Aiming at the testing problem of the bonding shear strength of the MEMS wafer, the application provides a new testing device, the blocking table for testing placement can be arranged on a carrier, the wafer bonding bottom layer structure can be fixed through the blocking table, the dependence on adhesive fixation is avoided, and the shear strength test of the current bonding structure layer to be tested is realized; furthermore, a blocking flat plate arranged on a blocking table is adopted to test the MEMS chip with the multilayer stacking structure with irregular edges; above, the shear strength test device can be suitable for the shear strength test of the bonding of the large-area wafer and the multilayer bonding of the MEMS device, and can meet the requirement of the shear strength test of the bonding of the MEMS wafer.
It will be understood by those skilled in the art that the configurations shown in fig. 5 to 8 are only block diagrams of partial configurations relevant to the present application, and do not constitute a limitation on the devices and configurations to which the present application is applied, and a specific configuration may include more or less components than those shown in the drawings, or may combine some components, or have a different arrangement of components.
In one embodiment, the application also provides a wafer bonding shear strength testing device which comprises the wafer bonding shear strength testing device fixed on a clamp.
For the specific definition of the disc bonding shear strength testing device, reference may be made to the definitions in the above embodiments, and details are not repeated here. The wafer bonding shear strength testing device comprises a blocking table which can be used for blocking the movement of a wafer bonding bottom layer structure of a chip to be tested, wherein the wafer bonding bottom layer structure comprises various bonding structure layers which are sequentially overlapped on the lower surface of the current bonding structure layer to be tested; specifically, the blocking table can be arranged on the carrier, the wafer bonding bottom layer structure can be fixed through the blocking table, the dependence on adhesive fixation is avoided, and the shear strength test of the current bonding structure layer to be tested is realized. The method and the device are suitable for testing the shearing strength of the large-area wafer bonding and the multilayer bonding of the MEMS device, and can meet the requirement for testing the shearing strength of the wafer bonding of the MEMS.
In one embodiment, as shown in fig. 9, the present application provides a method for testing shear strength of a wafer bond, comprising the steps of:
step S910, a chip to be tested is arranged on the wafer bonding shear strength testing device;
and step S920, carrying out a shear strength test on the corresponding bonding position of the chip to be tested to obtain the bonding shear strength.
Specifically, the MEMS wafer bonding shear strength test method of the present application is discussed below with reference to fig. 5, and the present application provides a device for testing the MEMS wafer bonding shear strength, which can be made of metal materials such as aluminum, the plane of the test device is a carrier 100 and can include a carrier step (i.e., a barrier table 200), the height of the step needs to be established according to the structure of a test sample (i.e., a chip to be tested), the carrier step and the carrier can be integrally processed or separately processed and fixed together by mechanical fixing means such as screws;
based on the testing device for the bonding shear strength of the wafer, the testing method for the bonding shear strength of the MEMS wafer can be further realized, wherein one side of an MEMS test sample is arranged close to the edge of a step of a carrier so as to be fixed on the carrier of the testing device; furthermore, the test sample can be fixed at the position close to the edge of the step of the carrier through an adhesive, and then the corresponding bonding position is subjected to a shear strength test through instruments such as a tension-shear instrument and the like.
The following describes an implementation process for monitoring the quality reliability of the bonding of the MEMS wafer by using the method of the application: the testing device of the bonding shear strength of the MEMS wafer is arranged in testing equipment; secondly, placing one side of the MEMS test sample on a test device carrier close to the edge of the step of the carrier; thirdly, the corresponding bonding position can be subjected to shear strength test through instruments such as a tension-shear instrument and the like.
More than, based on wafer bonding shear strength testing arrangement that this application provided, the device is including the platform that blocks that can be used for blockking the removal of the wafer bonding substructure of the chip that awaits measuring, specifically should block the platform and can locate on the carrier, can realize fixing of wafer bonding substructure through blocking the platform, has avoided the reliance fixed to the bonding agent, realizes the shear strength test to the bonding structure layer that awaits measuring at present. Furthermore, the shear strength testing method provided by the application can be suitable for testing the shear strength of the large-area wafer bonding and multilayer bonding of the MEMS device, so that the requirement of testing the shear strength of the MEMS wafer bonding is met.
It should be understood that, although the steps in the flowchart of fig. 9 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least a portion of the steps in fig. 9 may include multiple sub-steps or multiple stages that are not necessarily performed at the same time, but may be performed at different times, and the order of performance of the sub-steps or stages is not necessarily sequential, but may be performed in turn or alternately with other steps or at least a portion of the sub-steps or stages of other steps.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A device for testing the bonding shear strength of a wafer is characterized by comprising a carrier; a blocking table is arranged on the carrier;
the carrier is used for placing a chip to be tested; the blocking table is used for blocking the movement of the wafer bonding bottom layer structure of the chip to be detected; the wafer bonding bottom layer structure comprises various bonding structure layers which are sequentially stacked on the lower surface of the current bonding structure layer to be tested;
the upper surface of the carrier is attached to the lower surface of the wafer bonding bottom layer structure, and the wall surface of the blocking table is attached to the side surface, away from the contact tool, of the wafer bonding bottom layer structure, so that the test equipment can carry out shear strength test on the current bonding structure layer to be tested through the contact tool, and bonding shear strength is obtained.
2. The wafer bonding shear strength testing device of claim 1, wherein the blocking table is arranged on the upper surface of one end of the carrier, so that the longitudinal section of the carrier is stepped;
the blocking table is used for blocking the horizontal movement of the wafer bonding bottom layer structure.
3. The wafer bonding shear strength test apparatus of claim 2,
the carrier and the blocking table are of an integrated structure; or
The carrier is fixedly connected with the blocking table through a connecting piece.
4. The wafer bonding shear strength test device of any one of claims 1 to 3, wherein the height of the blocking table is determined according to the wafer bonding structure of the chip to be tested;
the wafer bonding structure comprises a multilayer stacking structure; the number of layers of the multilayer stack structure is at least 2.
5. The wafer bonding shear strength testing device of claim 4, wherein the wafer bonding structure is a multi-layer stack structure with regular edges;
the height of the blocking table is smaller than or equal to that of the wafer bonding bottom layer structure and larger than that of the bonding structure layer close to the upper surface of the carrier in the wafer bonding bottom layer structure.
6. The wafer bonding shear strength testing device of claim 4, wherein the wafer bonding structure is a multilayer stack structure with irregular edges;
the device also comprises a blocking flat plate arranged on the blocking table;
the blocking flat plate is used for blocking the movement of the bonding structure layer with irregular edges in the wafer bonding bottom layer structure;
and the wall surface of the barrier flat plate is attached to the side surface, away from the contact tool, of the bonding structure layer with the irregular edge.
7. The wafer bonding shear strength testing device of claim 6, wherein a strip-shaped notch for screwing a screw is formed on one end of the barrier flat plate;
the screw hole is also included; the threaded holes are arranged at corresponding positions of the blocking table.
8. The wafer bonding shear strength testing device of claim 1, wherein the upper surface of the carrier is bonded to the lower surface of the wafer bonding substructure.
9. A wafer bonding shear strength test apparatus comprising the wafer bonding shear strength test device according to any one of claims 1 to 8 fixed to a jig.
10. A method for testing the bonding shear strength of a wafer is characterized by comprising the following steps:
mounting a chip to be tested on the wafer bonding shear strength testing device according to any one of claims 1 to 8;
and carrying out a shear strength test on the corresponding bonding position of the chip to be tested to obtain the bonding shear strength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010156728.9A CN111289386B (en) | 2020-03-09 | 2020-03-09 | Device and method for testing wafer bonding shear strength |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010156728.9A CN111289386B (en) | 2020-03-09 | 2020-03-09 | Device and method for testing wafer bonding shear strength |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111289386A true CN111289386A (en) | 2020-06-16 |
| CN111289386B CN111289386B (en) | 2023-04-14 |
Family
ID=71029356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010156728.9A Active CN111289386B (en) | 2020-03-09 | 2020-03-09 | Device and method for testing wafer bonding shear strength |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111289386B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111413560A (en) * | 2020-03-10 | 2020-07-14 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Wafer bonding quality reliability test structure and reliability test method |
| CN112179731A (en) * | 2020-09-17 | 2021-01-05 | 长江存储科技有限责任公司 | Sample preparation method, stress detection method and sample to be detected |
| CN114527014A (en) * | 2021-12-24 | 2022-05-24 | 中国电子科技集团公司第五十八研究所 | Shear strength test method of laminated chip |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5767414A (en) * | 1997-03-05 | 1998-06-16 | Mitsubishi Semiconductor America, Inc. | Automatically aligning tool for uniformly applying a controlled force to an object |
| CN101086474A (en) * | 2006-06-05 | 2007-12-12 | 中南大学 | Thermosonic flip-chip bonding shear force test instrument |
| US20110214510A1 (en) * | 2010-03-05 | 2011-09-08 | Nordson Corporation | Clamping mechanism for shear testing apparatus |
| CN102770747A (en) * | 2009-09-03 | 2012-11-07 | 赛世铁克 | Improvements to high force die shear tooling |
| CN107014691A (en) * | 2017-04-01 | 2017-08-04 | 天津大学 | A kind of chip bonding strength meter and method |
| CN107179235A (en) * | 2017-04-25 | 2017-09-19 | 中国地质大学（武汉） | It is a kind of that fixing device and method that Multiple Shape irregular structure interviews sample are installed |
| CN107219123A (en) * | 2017-06-06 | 2017-09-29 | 哈尔滨工业大学 | The method and clamping device of a kind of cross bonding method measurement bonding chip intensity |
| CN107655749A (en) * | 2017-09-15 | 2018-02-02 | 北方电子研究院安徽有限公司 | A kind of multi-angle rotary fixture for the test of Die shear power |
-
2020
- 2020-03-09 CN CN202010156728.9A patent/CN111289386B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5767414A (en) * | 1997-03-05 | 1998-06-16 | Mitsubishi Semiconductor America, Inc. | Automatically aligning tool for uniformly applying a controlled force to an object |
| CN101086474A (en) * | 2006-06-05 | 2007-12-12 | 中南大学 | Thermosonic flip-chip bonding shear force test instrument |
| CN102770747A (en) * | 2009-09-03 | 2012-11-07 | 赛世铁克 | Improvements to high force die shear tooling |
| US20110214510A1 (en) * | 2010-03-05 | 2011-09-08 | Nordson Corporation | Clamping mechanism for shear testing apparatus |
| CN107014691A (en) * | 2017-04-01 | 2017-08-04 | 天津大学 | A kind of chip bonding strength meter and method |
| CN107179235A (en) * | 2017-04-25 | 2017-09-19 | 中国地质大学（武汉） | It is a kind of that fixing device and method that Multiple Shape irregular structure interviews sample are installed |
| CN107219123A (en) * | 2017-06-06 | 2017-09-29 | 哈尔滨工业大学 | The method and clamping device of a kind of cross bonding method measurement bonding chip intensity |
| CN107655749A (en) * | 2017-09-15 | 2018-02-02 | 北方电子研究院安徽有限公司 | A kind of multi-angle rotary fixture for the test of Die shear power |
Non-Patent Citations (1)
| Title |
|---|
| 卓锐: "基于等离子活化硅硅键合的微模具制备工艺研究", 《中国优秀博硕士学位论文全文数据库(硕士)工程科技Ⅰ辑》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111413560A (en) * | 2020-03-10 | 2020-07-14 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Wafer bonding quality reliability test structure and reliability test method |
| CN111413560B (en) * | 2020-03-10 | 2022-06-10 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Wafer bonding quality reliability test structure and reliability test method |
| CN112179731A (en) * | 2020-09-17 | 2021-01-05 | 长江存储科技有限责任公司 | Sample preparation method, stress detection method and sample to be detected |
| CN112179731B (en) * | 2020-09-17 | 2021-11-12 | 长江存储科技有限责任公司 | Sample preparation method, stress detection method and sample to be detected |
| CN114527014A (en) * | 2021-12-24 | 2022-05-24 | 中国电子科技集团公司第五十八研究所 | Shear strength test method of laminated chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111289386B (en) | 2023-04-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111289386B (en) | Device and method for testing wafer bonding shear strength | |
| Niklaus et al. | Adhesive wafer bonding | |
| KR102374162B1 (en) | Method of quantifying adhesion strength of interlayer adhesive element in tensile mode for staked semiconductor device and measurement apparatus for quantifying the same | |
| KR101733367B1 (en) | Wafer holder and method for manufacturing the same | |
| Dupont et al. | Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling | |
| US9390956B2 (en) | Method for the temporary connection of a product substrate to a carrier substrate | |
| Hermanowski | Thin wafer handling—Study of temporary wafer bonding materials and processes | |
| WO2007123199A1 (en) | Pressing head and pressing device | |
| Dragoi et al. | Wafer-level plasma activated bonding: new technology for MEMS fabrication | |
| Montméat et al. | Study of a silicon/glass bonded structure with a UV-curable adhesive for temporary bonding applications | |
| Kersey et al. | The effect of adhesion promoter on the adhesion of PDMS to different substrate materials | |
| JP2009260114A (en) | Substrate bonding device | |
| US10607962B2 (en) | Method for manufacturing semiconductor chips | |
| JP6414373B1 (en) | Method for evaluating fluidity of resin composition, method for selecting resin composition, and method for manufacturing semiconductor device | |
| EP1304198B1 (en) | Method for cutting a member to form a desired structure | |
| WO2023115243A1 (en) | Device and method for testing bonding strength of interlayer soft matter | |
| KR20140081358A (en) | Method, apparatus and sample for evaluating bonded strength | |
| JP5848952B2 (en) | Adhesive strength measuring apparatus and adhesive strength measuring method | |
| CN110261193B (en) | Tool and method for preparing adhesive T-shaped stripping sample | |
| KR20150069913A (en) | Specimens for measuring the bonding strength of thin film and methods for measuring the bonding strength of thin film using the same | |
| US20030196751A1 (en) | Systems and methods for bonding a heat sink to a printed circuit assembly | |
| JP4750041B2 (en) | Vacuum sensor application device and method for joining sensor processed parts to main body parts inseparably | |
| CN114527014A (en) | Shear strength test method of laminated chip | |
| Weiqiang et al. | ILD Interlaminar Strength Evaluation for WLCSP | |
| CN115394674A (en) | Test method of semiconductor chip set, semiconductor chip set and measuring device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |