CN111276432A - Processing device and processing method for integrated circuit wafer regeneration process - Google Patents
Processing device and processing method for integrated circuit wafer regeneration process Download PDFInfo
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- CN111276432A CN111276432A CN202010098701.9A CN202010098701A CN111276432A CN 111276432 A CN111276432 A CN 111276432A CN 202010098701 A CN202010098701 A CN 202010098701A CN 111276432 A CN111276432 A CN 111276432A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
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Abstract
The invention relates to the technical field of electronics, in particular to a processing device and a processing method for a regeneration process of an integrated circuit wafer, which comprises a laser film removing device, a chemical mechanical polishing device and a cleaning and detecting device, wherein the laser film removing device is used for removing a film on the surface of the wafer; the chemical mechanical polishing device is used for polishing the surface of the wafer after the film is removed, and the cleaning and detecting device is used for cleaning and detecting the surface of the polished wafer.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to a processing device and a processing method for an integrated circuit wafer regeneration process.
Background
With the rapid development of integrated circuit technology, the process technology is now being developed toward layering and miniaturization, the process in integrated circuit manufacturing has entered the generation of stacking multiple metal layers and multiple composite dielectric insulation layers, and the silicon wafer raw material is becoming more expensive due to unbalanced supply and demand, the high energy consumption and environmental protection problem in wafer manufacturing, and the recycled wafer industry is becoming more important. The traditional wafer regeneration is realized by removing a film by a physical or chemical method, grinding and polishing by a chemical or mechanical method, and finally cleaning, the process is complicated, the physical film removal is easy to cause wafer damage and fragment, and the chemical film removal uses a plurality of chemical varieties, so the problems of low wafer regeneration and recovery utilization rate caused by waste water and waste liquid treatment and silicon substrate damage under the environmental protection standard exist.
In the fabrication of integrated circuits, the following may be the case: (1) if the parameters detected in stages do not meet the control specifications, the wafer cannot be transferred to the next manufacturing process, i.e. a defective wafer (NG wafer) is scrapped in the middle; (2) the Monitor wafer (Monitor wafer) or dummy wafer (dummy wafer) used in the manufacturing process is only used for monitoring and parameter detection of the process at a certain stage, and the used control wafer and dummy wafer are used when they cannot be used continuously.
The wafer substrate is not damaged, but only the film layer or the pattern on the wafer surface has bad flaws, so that if the bad state on the wafer surface is removed, the wafer can be recovered to the primary wafer state for use, namely the wafer regeneration process.
In the conventional wafer regeneration process, the conventional wafer regeneration process identifies the surface film layers of the wafer in advance to classify the surface film layers, removes the film by a physical or chemical method, grinds and polishes the surface film layers by a chemical or mechanical method, and finally completes the wafer regeneration work by cleaning and detecting; the method comprises the following steps: film classification, chemical film removal, physical film removal and chemical mechanical polishing, which are based on process film classification before film removal, and use of chemicals corresponding to different film materials, are complicated in process and prone to damage of silicon substrates, and after film removal, a large number of damaged layers must be removed by polishing or both polishing and polishing. The problems of low recycling rate of the wafer due to waste water and waste liquid treatment under the environmental protection standard and silicon substrate damage and the like exist because the process is complicated, the physical membrane removal is easy to cause wafer damage and chip breaking, and the chemical membrane removal uses various chemicals.
Referring to fig. 1, the conventional wafer recycling process method includes the following steps: film classification (film classification), selection of film Removal methods according to film types, such as chemical film Removal (chemical film Removal) and physical film Removal (physical film Removal), Lapping (Lapping) or Polishing (polising), Removal of residual stress (Removal stress by etching) or residual stress Removal (Removal stress by etching), cleaning of wafers (Wafer clean), Wafer surface inspection (surface inspection), Final inspection (Final inspection), quality assurance and packaging (QC/qaandedpackage). If the residual film or the multilayer film exists or the surface detection is unqualified, the process needs to be reworked to the steps of physical film removal or polishing and the like, and the process is circulated once again.
The traditional grinding method can not meet the quality requirement, the wafer is easy to crack or fragment, the removal amount is large, the quality change is easy to form, the chemical etching removal is needed to be carried out for polishing, and the problems of environmental protection, material consumption and the like are solved. There is a technical bottleneck on how to reduce the surface damage layer (surface Damage) and reduce the warpage caused by residual stress (Warp). In addition, because the classification of the wafers is difficult, how to select the economical and correct process parameters for the grinding, polishing and cleaning processes often requires long-time process improvement and experience accumulation, and is time-consuming, energy-consuming, material-consuming, high-cost, and has the problem of secondary pollution.
Disclosure of Invention
The invention aims to provide a processing device for an integrated circuit wafer regeneration process and a using method thereof, which are used for solving the problems of time consumption, energy consumption, material consumption, high consumption and secondary pollution of the wafer regeneration process in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme: a processing device for integrated circuit wafer regeneration process comprises a laser film removing device, a chemical mechanical polishing device and a cleaning and detecting device, wherein the laser film removing device is used for removing a film on the surface of a wafer; the chemical mechanical polishing device is used for polishing the surface of the wafer after the film is removed, the cleaning and detecting device is used for cleaning and detecting the surface of the polished wafer,
the laser film removing device comprises a laser light source, a power supply, a light beam guiding device, a scanner, a reflector, a beam expanding mirror and a laser controller, wherein the power supply is used for supplying power to and connecting the laser light source, the light beam guiding device, the scanner, the reflector, the beam expanding mirror and the laser controller, the laser light source is arranged in a matching way corresponding to the light beam guiding device, the reflector is arranged in a matching way corresponding to the light source output end of the light beam guiding device, the beam expanding mirror is arranged in a matching way corresponding to the reflector, the detection end of the scanner is arranged in a position corresponding to the working surface of the device, the signal output end of the scanner is connected with the input end of the laser controller, the output end of the laser controller is distributed and connected with the control ends of the light beam guiding,
the chemical mechanical polishing device comprises a polishing pad, a polishing pad finisher, a chemical polishing solution device, a wafer holder, a motor and a transmission control device, wherein the motor and the transmission control device are used for operating and controlling the polishing pad, the polishing pad finisher, the chemical polishing solution device and the wafer holder, the polishing pad finisher is used for finishing the polishing pad, the wafer holder is used for fixedly holding the wafer with a film removed, the polishing pad is arranged corresponding to the wafer holder and is used for chemically and mechanically polishing the surface of the wafer, the chemical polishing solution device is arranged corresponding to the polishing pad and is used for outputting polishing solution to the polishing pad,
the cleaning and detecting device comprises an ultrapure water cleaning tank, an ultrasonic cleaning tank, a drying device and a wafer surface defect and particle and metal ion detecting device, wherein the ultrapure water cleaning tank and the ultrasonic cleaning tank are used for cleaning the surface of the polished wafer, the drying device is used for drying the surface of the cleaned wafer, and the wafer surface defect and particle and metal ion detecting device is used for detecting the thickness of the wafer, the defect of the wafer, the particle of the surface and the geometric figure of the wafer.
Preferably, the laser light source is a high-energy laser device module, and the laser device module is a semiconductor laser pumping solid-state laser.
Preferably, the beam expander is an adjustable beam expander or a collimating focusing lens with the power of 4-12 times.
Preferably, the polishing pad is a polyurethane polishing pad.
Preferably, the drying device is a heater of nitrogen and clean air.
Preferably, the wafer surface defect and particle and metal ion detection device comprises a wafer thickness detection FX200 type detector, a wafer defect detection PUMA9150 type detector, a surface particle detection Surfascansp3/SP5 type detector and a wafer geometry detection wafer sight type detector.
In order to achieve the above purpose, the invention also provides the following technical scheme: a processing method of integrated circuit wafer regeneration process using processing device includes the steps:
(1) providing a wafer needing a regeneration process;
(2) directly gasifying the removed target on the wafer by using the high energy of the laser, so that at least one film or a plurality of films with different properties on the surface of the wafer is removed by using the high energy of the laser;
(3) carrying out chemical mechanical polishing process on the wafer with the film removed;
(4) carrying out ultrapure water cleaning and ultrasonic cleaning on the polished wafer, and then drying the surface of the wafer;
(5) and carrying out standard parameter detection on the dried wafer.
Preferably, the wafer is a wafer for manufacturing integrated circuits and arranging circuits, patterns or oxide, nitride, polymer and metal thin film layers.
Preferably, the standard parameter detection comprises wafer thickness detection, wafer defect detection, surface micro-particle detection and wafer geometry detection.
Compared with the prior art, the invention has the beneficial effects that: the film and the pattern with multiple layers and different materials on the surface of the wafer are removed at one time by laser film removal, and only polishing and detection are needed to pass the standard of the specification requirement. The manufacturing method is simple, the wafers are not required to be classified in advance, and the consumption and discharge of chemicals or mechanical grinding are not required to be considered, so that the environmental protection problem can be avoided, the manufacturing cost can be reduced, and the problems that the silicon substrate is easily damaged and residual stress is caused by the traditional mechanical grinding are also reduced. Therefore, the wafer regeneration and production efficiency is improved, the consumption of ultrapure water and chemicals is reduced, the defects of products are eliminated, and the like, and the purposes of increasing the productivity, improving the yield, saving energy, protecting environment and the like are finally achieved.
Drawings
FIG. 1 is a block diagram of a conventional wafer reclamation process;
FIG. 2 is a block diagram illustrating the steps of a laser de-filming process in accordance with one embodiment of the present invention;
FIG. 3 is a system block diagram of a processing device according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, the conventional wafer recycling process method is not limited to different combinations of the following steps, as shown in fig. 1, mainly includes the following steps:
s01: and inspecting and classifying the wafer, and classifying the image and film characteristics left in the wafer manufacturing process by visual inspection, optics, colors and process history of the front surface of the wafer.
S02: and (4) performing a physical film removing step, namely removing the target film layer of the wafer by grinding, wheel grinding, chemical mechanical grinding and other modes.
S03: and performing a chemical film removing step to remove the target film layer from the wafer by dry etching or wet etching.
S04: performing a wafer polishing operation.
S05: performing stress relief operation on the wafer.
S06: wafer cleaning, inspection of various parameters, packaging, and classification.
As shown in fig. 3, the present invention provides a technical solution: a processing device for integrated circuit wafer regeneration process comprises a laser film removing device, a chemical mechanical polishing device and a cleaning and detecting device, wherein the laser film removing device is used for removing a film on the surface of a wafer; the chemical mechanical polishing device is used for polishing the surface of the wafer after the film is removed, the cleaning and detecting device is used for cleaning and detecting the surface of the polished wafer,
the laser film removing device comprises a laser light source, a power supply, a light beam guiding device, a scanner, a reflector, a beam expanding mirror and a laser controller (the laser controller is a frequency, energy and multi-wavelength output, detection and control system), wherein the power supply is used for supplying power to the laser light source, the light beam guiding device, the scanner, the reflector, the beam expanding mirror and the laser controller, the laser light source is arranged in a matching way corresponding to the light beam guiding device, the reflector is arranged in a matching way corresponding to the light source output end of the light beam guiding device, the beam expanding mirror is arranged in a matching way corresponding to the reflector, the detection end of the scanner is arranged in a position corresponding to the working surface of the device, the signal output end of the scanner is connected with the input end of the laser controller, the output end of the laser controller is distributed and connected with the control ends of the light beam guiding device, the reflector and the beam expanding mirror, depending on the actual requirements, the description is not limited to this.
The laser light source is a high-energy laser device module, the laser device module is a semiconductor laser pumping solid-state laser, and the output wavelength of the laser device module is 450-1064 (nm) nanometer 15-30 watt (W) high-power laser devices.
The beam expander is a 4-12 times adjustable beam expander or a collimation focusing lens, the 4-12 times adjustable beam expander or the collimation focusing lens is used for expanding beams and adjusting multiple and divergence angle of various harmonic lasers, different energy and distribution conditions are selected, the lenses focus the lasers reflected by the vibrating mirror after expansion, the lenses with different sizes are selected to adjust working range and distance, light spot size and energy, the operation track is set by the scanning vibrating mirror according to the regeneration range of the wafer, the spacing is 16-32 micrometers (um), the frequency is 100-1200 Hertz (Hz), and the speed is 0.5-1.5 centimeters (cm) per minute; the energy of the laser acts on the film layer and the pattern on the surface of the silicon wafer to vaporize the multi-layer films with different characteristics, so that the regeneration process of removing the film and the pattern on the surface of the silicon wafer is achieved.
The chemical mechanical polishing device comprises a polishing pad, a polishing pad finisher, a chemical polishing solution device, a wafer holder, a motor and a transmission control device, wherein the motor and the transmission control device are used for operating and controlling the polishing pad, the polishing pad finisher, the chemical polishing solution device and the wafer holder, the polishing pad finisher is used for finishing the polishing pad, the wafer holder is used for fixedly holding the wafer with a film removed, the polishing pad is arranged corresponding to the wafer holder and is used for chemically and mechanically polishing the surface of the wafer, the chemical polishing solution device is arranged corresponding to the polishing pad and is used for outputting polishing solution to the polishing pad,
the polishing pad is a polyurethane polishing pad, and the specification is as follows: adding cerium oxide, silica gel, a foaming aperture of 20-40 micrometers (um), a thickness of 5-8 millimeters (mm) and a medium-soft value; depending on the actual requirements, the description is not limited to this.
The polishing pad dresser is made of Epoxy Resin glue (Epoxy Resin Adhesive) molded diamond disc, has high-efficiency dressing capability and has the specification: 11.8 millimeters (mm) in diameter, 7.7 millimeters (mm) in thickness, 2000 ± 200 angstroms (a) removal rate, 0.12 millimeters (mm) pad wear rate per hour; depending on the actual requirements, the description is not limited to this.
The chemical polishing solution device comprises a polishing solution conveying circulating system, a polishing solution leakage head and the like, wherein the specification of the polishing solution is as follows: acidic solution, aluminum oxide (Al)2O3) Special slurry for micro-particles or silicon substrates; depending on the actual requirements, the description is not limited to this.
The material of wafer holder is stainless steel coating film, its specification: leveling and maintaining the wafer height to be 100-200 micrometers (um); depending on the actual requirements, the description is not limited to this.
The motor and transmission control device comprises a motor, a positioning and rotating speed controller, a power supply and the like, and the specification is as follows: 220V Alternating Current (AC) -3 Horse (HP), 25% -100% of a frequency converter, 90-180 Revolutions Per Minute (RPM) of a rotating speed device, a laser bottoming controller and the like; depending on the actual requirements, the description is not limited to this.
The cleaning and detecting device comprises an ultrapure water cleaning tank, an ultrasonic cleaning tank, a drying device and a wafer surface defect and particle and metal ion detecting device, wherein the ultrapure water cleaning tank and the ultrasonic cleaning tank are used for cleaning the surface of the polished wafer, the drying device is used for drying the surface of the cleaned wafer, and the wafer surface defect and particle and metal ion detecting device is used for detecting the thickness of the wafer, the defect of the wafer, the particle of the surface and the geometric figure of the wafer.
The material of ultrapure water washing tank is polypropylene (PP), its specification: a volume of 250 liters, using ultrapure water having a resistance value of 18.2 million ohm-centimeters (M Ω -cm) and less than 1 particle of 0.5 micrometer (um); the content is not limited to the description content according to the actual requirement;
the material of ultrasonic cleaning groove is stainless steel (SS316), and its specification: 250 liters in volume, 28 kilohertz (KHz), and room temperature to 90 degrees (DEG C) temperature control; the content is not limited to the description content according to the actual requirement;
the ultrasonic cleaning tank; the material is polypropylene (PP), and the specification is as follows: 250 liters in volume, 28 kilohertz (KHz), and room temperature to 90 degrees (DEG C) temperature control; depending on the actual requirements, the description is not limited to this.
The drying device is a heater of nitrogen and clean air, and the specification is as follows: the air flow speed is 2.0 m/s, and the temperature is controlled between room temperature and 150 ℃ (DEG C); depending on the actual requirements, the description is not limited to this.
The wafer surface defect, particle and metal ion detection device comprises an FX200 type detector for wafer thickness detection, a PUMA9150 type detector for wafer defect detection, a Surfascansp3/SP5 type detector for surface particle detection and a wafer geometry detection reference type detector, and various detection devices and apparatuses are adopted as Kotian (KLA-Tancor) products.
The processing method for the integrated circuit wafer regeneration process of the application processing device is formed according to the device and comprises the following steps:
(1) providing a wafer needing a regeneration process;
(2) directly gasifying the removed target on the wafer by using the high energy of the laser, so that at least one film or a plurality of films with different properties on the surface of the wafer is removed by using the high energy of the laser;
(3) carrying out chemical mechanical polishing process on the wafer with the film removed;
(4) carrying out ultrapure water cleaning and ultrasonic cleaning on the polished wafer, and then drying the surface of the wafer;
(5) and carrying out standard parameter detection on the dried wafer.
The wafer is a wafer on which circuits, patterns or oxide, nitride, polymer and metal film layers are arranged in the integrated circuit manufacturing process.
The standard parameter detection comprises wafer thickness detection, wafer defect detection, surface micro-particle detection and wafer geometry detection.
As shown in fig. 2, according to the present technical solution, in this embodiment, experiments are performed to verify the effect of the present invention; the embodiments utilize different silicon wafer surface film layers and patterns, divided into four structures as detailed below:
sample one: the wafer surface contains an oxide thickness of 0.6 microns (um)
Sample two: the wafer surface comprises an oxide, a polymer or a metal with a thickness of 0.8 micrometer (um)
Sample three: the wafer surface contains an oxide thickness of 1.2 microns (um), a polymer thickness of 0.6 microns (um), or a metal thickness of 1.5 microns (um)
Sample four: the wafer surface comprises an oxide thickness
The thickness of the polymer is 1.0-1.2 micrometer (um) or the thickness of the metal is 1.0-1.2 micrometer (um).
In the embodiment, a semiconductor laser pump solid state laser (DPSSL) is used, a 20W high-power laser device with the output wavelength of 850 nanometers (nm) is used, a 4-8-time adjustable beam expander or a collimation focusing lens is used for expanding beams of various harmonic lasers, adjusting the multiple and the divergence angle, selecting different energy and distribution conditions, focusing the laser reflected by a vibrating mirror after the beam expansion by a lens, selecting the lenses with different sizes to adjust the working range and distance and the size and energy of a light spot, setting the running track by the scanning vibrating mirror according to the regeneration range of a wafer, wherein the interval is 20 micrometers (um), the frequency is 1000 hertz (Hz), and the speed is 1 centimeter (cm) per minute; the energy of the laser acts on the film layer and the pattern on the surface of the silicon wafer to vaporize the multi-layer films with different characteristics, so that the aim of the regeneration process for removing the film and the pattern on the surface of the silicon wafer can be achieved. The method comprises the following specific steps:
s11: the wafer regeneration does not need to be subjected to film characteristic classification, and directly enters a laser mechanism chamber, and films with different characteristics and multiple films are removed at one time by laser; the method specifically comprises the following steps: the device comprises a laser light source, a power supply, a light beam guiding device, a scanner, a reflecting mirror, a beam expanding mirror or a collimation focusing mirror, and a frequency, energy and multi-wavelength output, detection and control system; any one or more of the mechanisms in the laser device may be one or more. Removing film layers or patterns of different characteristics and multilayer films on the wafer by a laser device;
s12: the wafer is chemically mechanically polished back to the primary wafer state. Utilizing; i.e., through further steps on the basis of step S1.
S13: the wafer is cleaned, inspected for various parameters, packaged, and classified to complete the wafer recycling process.
According to experimental results, the surface morphology of the wafer is observed by an optical microscope, all silicon wafers are most easily processed by the type of the film pattern of the sample I, and the surface of the silicon wafer forms flaky flying dust under the scanning of laser beams; the silicon wafers of other samples have different structures of colors, films and patterns of all parts, so that the scanning processing difficulty is slightly high, and the film layer can be removed only by taking much time; on the surface of the same silicon wafer, different structural parts have difference in laser absorption and reflection, so that the silicon wafer with a simpler structure is damaged seriously, and the part with a more complicated structure has a phenomenon of film residue. Thus, it has been demonstrated that the present invention can be practiced where fine tuning of the process parameters to control is appropriate to enable laser ablation of the thin film pattern from the silicon wafer surface and is sufficient to ensure crack-free.
More carefully to realize the present invention, it is necessary to properly control the stability of the laser beam and frequency, the scanning of the galvanometer, and the precision requirement of program control, so as to stabilize the output of the laser and ensure the uniformity of the lines of each part to be scanned. Moreover, the laser has to pursue the larger facula and the single-point power is stable and even, because the laser is the facula and the spot superposition amount removes the wafer surface film layer, if the spot is bigger and the required spot accumulation is less, then machining efficiency promotes, and laser instrument energy is again joined in marriage the facula size and is adjusted, guarantees to select appropriate camera lens size and beam expanding mirror multiple to reach the target task under the condition that can make the film layer vaporize in the twinkling of an eye.
Reference material: the invention completes the process method of wafer regeneration through the processes of laser film removal, chemical mechanical polishing, cleaning and the like, and achieves the following main specification targets:
surface roughness Ra value (arithmetic mean roughness Ra) of 10 angstrom (1nm) or less (measurement length reservoir 50um)
The Total Thickness of the Variation waviness TTV (Total Thickness Variation) on the wafer surface is within ± 5u m (the allowable value of TTV is the same even if the Thickness is thin)
A wafer Thickness (Thickness of a thin reservoir after regeneration) of 600um or more (initial value of 700um)
Metal Contamination (Contamination):
Al 1x10E13atom/cm2the following
Na 2x10E10atom/cm2The following
Cr 2x10E10atom/cm2The following
Surface state: ra after mirror CMP was 1 nm.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (9)
1. A processing apparatus for integrated circuit wafer regeneration process, characterized in that: the device comprises a laser film removing device, a chemical mechanical polishing device and a cleaning and detecting device, wherein the laser film removing device is used for removing a film on the surface of a wafer; the chemical mechanical polishing device is used for polishing the surface of the wafer after the film is removed, the cleaning and detecting device is used for cleaning and detecting the surface of the polished wafer,
the laser film removing device comprises a laser light source, a power supply, a light beam guiding device, a scanner, a reflector, a beam expanding mirror and a laser controller, wherein the power supply is used for supplying power to and connecting the laser light source, the light beam guiding device, the scanner, the reflector, the beam expanding mirror and the laser controller, the laser light source is arranged in a matching way corresponding to the light beam guiding device, the reflector is arranged in a matching way corresponding to the light source output end of the light beam guiding device, the beam expanding mirror is arranged in a matching way corresponding to the reflector, the detection end of the scanner is arranged in a position corresponding to the working surface of the device, the signal output end of the scanner is connected with the input end of the laser controller, the output end of the laser controller is distributed and connected with the control ends of the light beam guiding,
the chemical mechanical polishing device comprises a polishing pad, a polishing pad finisher, a chemical polishing solution device, a wafer holder, a motor and a transmission control device, wherein the motor and the transmission control device are used for operating and controlling the polishing pad, the polishing pad finisher, the chemical polishing solution device and the wafer holder, the polishing pad finisher is used for finishing the polishing pad, the wafer holder is used for fixedly holding the wafer with a film removed, the polishing pad is arranged corresponding to the wafer holder and is used for chemically and mechanically polishing the surface of the wafer, the chemical polishing solution device is arranged corresponding to the polishing pad and is used for outputting polishing solution to the polishing pad,
the cleaning and detecting device comprises an ultrapure water cleaning tank, an ultrasonic cleaning tank, a drying device and a wafer surface defect and particle and metal ion detecting device, wherein the ultrapure water cleaning tank and the ultrasonic cleaning tank are used for cleaning the surface of the polished wafer, the drying device is used for drying the surface of the cleaned wafer, and the wafer surface defect and particle and metal ion detecting device is used for detecting the thickness of the wafer, the defect of the wafer, the particle of the surface and the geometric figure of the wafer.
2. The processing apparatus of claim 1, wherein: the laser light source is a high-energy laser device module, and the laser device module is a semiconductor laser pumping solid-state laser.
3. The processing apparatus of claim 1, wherein: the beam expander is an adjustable beam expander or a collimating focusing lens with the power of 4-12 times.
4. The processing apparatus of claim 1, wherein: the polishing pad is a polyurethane polishing pad.
5. The processing apparatus of claim 1, wherein: the drying device is a heater of nitrogen and clean air.
6. The processing apparatus of claim 1, wherein: the device for detecting the defects, the particles and the metal ions on the surface of the wafer comprises an FX200 type detector for detecting the thickness of the wafer, a PUMA9150 type detector for detecting the defects of the wafer, a Surfascansp3/SP5 type detector for detecting the particles on the surface of the wafer and a wafer geometry detection Wafersight type detector.
7. A processing method of integrated circuit wafer regeneration process using processing device is characterized in that: the method comprises the following steps:
(1) providing a wafer needing a regeneration process;
(2) directly gasifying the removed target on the wafer by using the high energy of the laser, so that at least one film or a plurality of films with different properties on the surface of the wafer is removed by using the high energy of the laser;
(3) carrying out chemical mechanical polishing process on the wafer with the film removed;
(4) carrying out ultrapure water cleaning and ultrasonic cleaning on the polished wafer, and then drying the surface of the wafer;
(5) and carrying out standard parameter detection on the dried wafer.
8. The method as claimed in claim 7, wherein the integrated circuit wafer reclamation process further comprises: the wafer is a wafer on which circuits, patterns or oxide, nitride, polymer and metal film layers are arranged in the integrated circuit manufacturing process.
9. The method as claimed in claim 7, wherein the integrated circuit wafer reclamation process further comprises: the standard parameter detection comprises wafer thickness detection, wafer defect detection, surface micro-particle detection and wafer geometry detection.
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| CN (1) | CN111276432A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113471067A (en) * | 2021-07-28 | 2021-10-01 | 上海申和热磁电子有限公司 | Waste wafer surface film stripping regeneration treatment process and device thereof |
| CN115365230A (en) * | 2021-05-17 | 2022-11-22 | 中国科学院沈阳自动化研究所 | Nondestructive laser cleaning method for uniform water film wafer particles |
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2020
- 2020-02-18 CN CN202010098701.9A patent/CN111276432A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115365230A (en) * | 2021-05-17 | 2022-11-22 | 中国科学院沈阳自动化研究所 | Nondestructive laser cleaning method for uniform water film wafer particles |
| CN115365230B (en) * | 2021-05-17 | 2024-03-22 | 中国科学院沈阳自动化研究所 | Uniform water film wafer particulate matter nondestructive laser cleaning method |
| CN113471067A (en) * | 2021-07-28 | 2021-10-01 | 上海申和热磁电子有限公司 | Waste wafer surface film stripping regeneration treatment process and device thereof |
| CN113471067B (en) * | 2021-07-28 | 2022-11-29 | 上海申和投资有限公司 | Waste wafer surface film stripping regeneration treatment process and device thereof |
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