CN111276391A - Cleaning method for TSV silicon substrate flip-chip welding assembly - Google Patents
Cleaning method for TSV silicon substrate flip-chip welding assembly Download PDFInfo
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- CN111276391A CN111276391A CN202010105220.6A CN202010105220A CN111276391A CN 111276391 A CN111276391 A CN 111276391A CN 202010105220 A CN202010105220 A CN 202010105220A CN 111276391 A CN111276391 A CN 111276391A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a cleaning method of a TSV silicon substrate flip-chip bonding assembly, and belongs to the field of nondestructive cleaning of electronic components. According to the cleaning method, the contact characteristic of the hydrocarbon cleaning agent and the cleaned workpiece is changed by utilizing the physical change of the hydrocarbon cleaning agent in a vacuum state, so that the advantages of the hydrocarbon cleaning agent are exerted, and the vacuumized cleaning method is utilized to discharge air on the surface and in gaps of the component, so that the hydrocarbon cleaning agent is completely immersed into each part of the component, and the cleaning effect is improved; on the other hand, the boiling point of the hydrocarbon cleaning agent is reduced, so that the hydrocarbon cleaning agent can be boiled when being heated to more than 70 ℃, and vapor phase cleaning is realized; by using the bumping effect of the hydrocarbon cleaning agent under vacuum, the solvent on the surface and inside of the component is volatilized rapidly, and the drying speed is increased. The cleaning method is nondestructive cleaning, and the flux residue in the TSV silicon substrate flip chip welding assembly is small after cleaning, so that the cleaning effect is good.
Description
Technical Field
The invention belongs to the field of nondestructive cleaning of electronic components, and particularly relates to a cleaning method of a TSV silicon substrate flip chip bonding assembly.
Background
Nowadays, the chip technology develops towards high density, miniaturization and high performance, a 2.5D-TSV packaging structure can realize low-cost and high-density integration, the requirement for improving the integration level by adopting a packaging method is more and more vigorous, in the field of high-reliability military SiP integrated products, a flip-chip welding chip and a TSV silicon substrate are interconnected to form a flip-chip welding assembly, and the assembly can be further assembled in a ceramic tube shell, so that the flip-chip welding assembly has important application value in the aerospace military industry fields such as high-end weapons, aerospace equipment and the like as a secondary packaging mode of a super-large-scale integrated circuit.
In flip-chip electronic packages, the flux acts to react with stannous oxide and its cognate compounds on the surface of the solder bump to form a complex or chelate that provides a wettable surface for the solder at the solder bump reflow temperature. However, flux residue after soldering weakens the interfacial adhesion performance of the lower filler, which may cause reliability problems in other environmental stress tests, and thus the flux residue needs to be cleaned. However, at present, the assembly welded based on a single TSV substrate has no clampable process edge, the silicon material is hard and brittle and is easily damaged, and the flux is left in the tiny gap of the assembly after flip-chip welding, so that the flux cleaning work is extremely difficult.
Disclosure of Invention
The invention aims to solve the problem that soldering flux in a TSV silicon substrate flip-chip bonding assembly is not easy to clean, and provides a cleaning method of the TSV silicon substrate flip-chip bonding assembly.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose:
a cleaning method of a TSV silicon substrate flip-chip bonding assembly comprises the following steps:
the cleaning was accomplished using the following cleaning apparatus:
the cleaning device comprises a closed cleaning cavity, a plurality of spray heads are arranged on the inner wall of the cleaning cavity, a detachable cleaning basket is arranged in the cleaning cavity, a plurality of through holes are formed in the side surface and the bottom surface of the cleaning basket, and a plurality of clamping grooves are formed in the bottom surface of the cleaning basket;
when the cleaning basket is arranged in the cleaning chamber, the cleaning basket can rotate and swing;
1) fixing the TSV silicon substrate flip-chip welding assembly on a clamping groove in a cleaning basket, and placing the cleaning basket in a cleaning chamber, wherein the temperature in the cleaning chamber is 90-100 ℃;
2) adding a hydrocarbon cleaning agent into the cleaning chamber until the hydrocarbon cleaning agent submerges the TSV silicon substrate flip chip welding assembly;
3) and pumping the cleaning chamber to a preset vacuum degree to finish cleaning.
Further, the step 2) and the step 3) are accompanied by spraying, and a hydrocarbon cleaning agent is sprayed by the spray head to the TSV silicon substrate flip chip welding assembly for cleaning.
Further, the distillation range of the hydrocarbon cleaning agent in the step 2) is 140-.
Further, hydrocarbon detergents include normal paraffins and isoparaffins.
Further, the preset vacuum degree in the step 3) is less than or equal to 4 mbar.
Further, the step 3) is followed by cleaning the SiP module of the 2.5D-TSV package structure.
Further, the SiP module of the 2.5D-TSV encapsulation structure is placed in a cleaning device through a cleaning frame, and the cleaning process is as the step 2) to the step 3).
Further, the cleaning process is accompanied by the rotation or oscillation of the cleaning frame.
Compared with the prior art, the invention has the following beneficial effects:
according to the cleaning method of the TSV silicon substrate flip-chip welding assembly, the contact characteristic of the hydrocarbon cleaning agent and the cleaned workpiece is changed by utilizing the physical change of the hydrocarbon cleaning agent in a vacuum state, so that the advantages of the hydrocarbon cleaning agent are exerted, the air on the surface and in the gaps of the assembly can be discharged by utilizing the vacuumized cleaning method, the hydrocarbon cleaning agent is completely immersed into all parts of the assembly, and the cleaning effect is improved; on the other hand, the boiling point of the hydrocarbon cleaning agent is reduced, so that the hydrocarbon cleaning agent can be boiled when being heated to below 70 ℃ (the temperature is lower than the flash point), and vapor phase cleaning is realized; by using the bumping effect of the hydrocarbon cleaning agent under vacuum, the solvent on the surface and inside the component is quickly volatilized, and the drying speed is increased; the clearance is little and dark between chip and the TSV silicon substrate among the assembly is welded to the back-off, and the hydrocarbon cleaner of general cleaning mode is difficult to get into, and cleaning performance is unsatisfactory, utilizes the abluent method of vacuum vapor phase to solve this problem, and washs and to the assembly not damaged of back-off, and the scaling powder residue volume in the assembly is welded to the TSV silicon substrate back-off after wasing is little, and cleaning performance is good.
Furthermore, the spraying cleaning can clean more soldering flux by means of the scouring of the hydrocarbon cleaning agent.
Furthermore, the distillation range of the hydrocarbon cleaning agent is 140-190 ℃, the boiling point of the hydrocarbon cleaning agent is reduced to about 90-100 ℃ under the low pressure (70mbar) in the distillation tank, and the boiling point of the hydrocarbon cleaning agent is reduced to below 70 ℃ in the cleaning chamber when the vacuum degree is increased to 4 mbar. The hydrocarbon cleaning agent comprises normal alkane and isoparaffin, has lipophilicity and enough dissolving power to dissolve the soldering flux residue after the components are welded; meanwhile, the cleaning agent also has hydrophilicity, and can effectively clean other water-soluble magazines in the component; in addition, hydrocarbon cleaners are environmentally friendly cleaners.
Furthermore, the preset vacuum degree is 4mbar, the boiling point of the hydrocarbon cleaning agent is reduced to be below 70 ℃, the temperature in the cavity is 75 ℃, and the cleaning agent remained on the surface and in the component can be ensured to be evaporated instantly, so that the purpose of cleaning the soldering flux remained in the component is achieved.
Further, the SiP module of the 2.5D-TSV packaging structure is cleaned, and the scaling powder remained on the TSV silicon substrate flip-chip welding assembly is further removed.
Furthermore, the cleaning process of the SiP module of the 2.5D-TSV packaging structure is accompanied by rotation or swing of the cleaning frame, and the module is assembled and is not restrained by the brittleness and frangibility of the silicon chip and the chip, so that the cleaning can be more uniform through rotation or swing.
Drawings
FIG. 1 is a flow chart of an embodiment of the present invention;
FIG. 2 is a schematic structural view of a wash basket;
fig. 3 is a schematic structural view of a cleaning chamber.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The invention is described in further detail below with reference to the accompanying drawings:
as shown in fig. 1, fig. 1 is a flowchart of an embodiment of the present invention, which specifically includes the following steps:
the method comprises the following steps: manufacturing a cleaning basket according to the characteristics and structural design of the inverted buckle welding assembly, wherein the cleaning basket is made of polytetrafluoroethylene, the structure of the cleaning basket is shown in figure 2, a plurality of through holes are formed in the side wall and the bottom plate of the cleaning basket, and a plurality of clamping grooves are formed in the bottom plate;
the cleaning basket is used for placing the TSV silicon substrate reverse-buckling welding assembly, after the cleaning basket is clamped into the cleaning working chamber, the reverse-buckling welding assembly and the reverse-buckling welding assembly are separated by a placing block, and damage caused by mutual collision is avoided in the cleaning process;
step two: putting the TSV silicon substrates into a cleaning basket one by one in a back-off welding mode;
step three: placing the cleaning basket in the second step into a cleaning chamber, wherein fig. 3 is a schematic structural diagram of the cleaning chamber, a plurality of spray heads are arranged on the inner wall of the chamber, the cleaning basket can rotate or swing in the cleaning chamber, and the specific structure can be realized by the prior art;
step four: cleaning the flip-chip welding assembly, wherein the chip and the substrate of the assembly are made of silicon materials and have the characteristics of high hardness and high brittleness, so that the cleaning basket is in a static state in the cleaning process; injecting a hydrocarbon cleaning agent into the cleaning chamber, reducing the surface tension of the hydrocarbon cleaning agent by using a vacuumizing mode, enabling liquid to easily enter each gap of a cleaned component, adjusting the cleaning mode in equipment, and dissolving and cleaning the scaling powder by spraying, immersing, spraying, drying and other modes;
step five: taking out the cleaned flip-chip component, selecting 1-2 of the components, placing the components on a heating plate for 30min, wherein the temperature of the heating plate is 150 ℃ of the active temperature of the soldering flux, observing the surface of a silicon substrate around a chip on the component by using a stereoscopic microscope, according to the characteristic that the soldering flux is easy to flow and volatilize at high temperature, if the phenomenon of the leakage of the soldering flux around the chip is found, adjusting a cleaning mode, re-cleaning the component until the phenomenon that the leakage of the soldering flux does not occur around the chip after the method is adopted, if the leakage of the soldering flux is not observed under the stereoscopic microscope, further increasing the temperature of the heating plate to be 30-50 ℃ above the melting point of the soldering flux, desoldering the component, then respectively observing the welding surfaces of the silicon substrate and the chip under the stereoscopic microscope to determine whether the soldering flux remains or not, and entering the next step (the step is a destructive test, thus in a sampling fashion);
step six: bottom filling is carried out on the flip chip assembly, BGA ball planting is carried out on the back face of the assembly, the assembly is assembled into a ceramic tube shell in a BGA welding mode, and a SiP module of a 2.5D-TSV packaging structure is formed;
step seven: manufacturing a cleaning frame according to the characteristics and structural design of the module, wherein the cleaning frame is made of aluminum alloy with anodized surfaces, and four corners of the module are fixed on the cleaning frame by screws on four rectangular side surfaces of the die, so that the module cannot be displaced with a tool in the cleaning process, and the modules can be mounted on four surfaces, so that the number of the modules cleaned at one time can be increased; further removing the flux remained on the TSV silicon substrate flip-chip welding assembly;
step eight: placing the cleaning frame into a cleaning chamber;
step nine: starting cleaning equipment, wash the SiP module, because the relative position between module and the frock has all been fixed, consequently, except that usable evacuation mode reduces hydrocarbon cleaner's surface tension, make hydrocarbon cleaner get into easily by each gap of cleaning member, the cleaning method in the adjustment equipment simultaneously, make the washing frame that takes the module rotatory round the center pin position in the cavity, and through spraying, the submergence sprays, mode such as drying dissolves the scaling powder and clears away, adopt this mode can further improve abluent effect.
Step ten: and (4) carrying out ion concentration test on the cleaned module by using an ion concentration detector, analyzing the surface of the cleaned module by using XPS (XPS), completing cleaning after confirming that no pollution ion remains, and otherwise, repeating the seventh step to the tenth step until confirming that the cleaning effect is effective.
The specific cleaning process comprises the following steps: heating (100 ℃) the hydrocarbon in the cleaning chamber to form steam, heating the assembly, and softening the flux in the assembly in preparation for sufficient removal; and secondly, spraying and cleaning, wherein hydrocarbon is sprayed on the component to take away the soldering flux on the component through washing and dissolving. Or the cleaning liquid is filled in the whole cleaning cavity, and the liquid is pumped out through the nozzle to circulate to form turbulent flow, so that the soldering flux in the gaps of the components is removed, and the soldering flux is transmitted into the distillation retort through the filtering system to be purified; thirdly, performing integral rinsing, namely increasing the vacuum degree of a cleaning chamber to 70mbar, flushing steam to reach about 100mbar, condensing and rinsing hot steam on the surface of the component with lower temperature, and fully introducing the steam into gaps in the component to achieve a good cleaning effect; and finally, carrying out vacuum drying, wherein the vacuum degree of a cleaning chamber is improved to be below 4mbar, the boiling point of hydrocarbon is reduced to be below 70 ℃ (the temperature of the cleaning chamber is 75 ℃), so that residual solution on the surface and inside of the component and the dissolved soldering flux inside the component are instantaneously evaporated to achieve the effect of thorough cleaning, and the evaporated solution gas is recovered along a vacuum tube and flows to a distillation retort through condensation.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.
Claims (8)
1. A cleaning method of a TSV silicon substrate flip-chip bonding assembly is characterized by comprising the following steps:
the cleaning was accomplished using the following cleaning apparatus:
the cleaning device comprises a closed cleaning cavity, a plurality of spray heads are arranged on the inner wall of the cleaning cavity, a detachable cleaning basket is arranged in the cleaning cavity, a plurality of through holes are formed in the side surface and the bottom surface of the cleaning basket, and a plurality of clamping grooves are formed in the bottom surface of the cleaning basket;
when the cleaning basket is arranged in the cleaning chamber, the cleaning basket can rotate and swing;
1) fixing the TSV silicon substrate flip-chip welding assembly on a clamping groove in a cleaning basket, and placing the cleaning basket in a cleaning chamber, wherein the temperature in the cleaning chamber is 90-100 ℃;
2) adding a hydrocarbon cleaning agent into the cleaning chamber until the hydrocarbon cleaning agent submerges the TSV silicon substrate flip chip bonding assembly;
3) and pumping the cleaning chamber to a preset vacuum degree to finish cleaning.
2. The method for cleaning the TSV silicon substrate flip-chip bonding assembly of claim 1, wherein the steps 2) and 3) are accompanied by spraying, and the spray head sprays hydrocarbon cleaning agent onto the TSV silicon substrate flip-chip bonding assembly for cleaning.
3. The method for cleaning the flip chip assembly for the TSV silicon substrate as claimed in claim 1, wherein the hydrocarbon cleaning agent in step 2) has a distillation range of 140 ℃ and 190 ℃.
4. The method of claim 3, wherein the hydrocarbon cleaning agent comprises normal alkanes and isoparaffins.
5. The method for cleaning the flip chip assembly for the TSV silicon substrate of claim 1, wherein the predetermined vacuum level in step 3) is less than or equal to 4 mbar.
6. The method for cleaning the flip chip assembly of the TSV silicon substrate of any one of claims 1-5, further comprising cleaning the SiP module of the 2.5D-TSV package structure after step 3).
7. The method of claim 6, wherein the SiP module of the 2.5D-TSV package is placed in a cleaning apparatus through a cleaning frame, and the cleaning process is as described in steps 2) -3).
8. The method of cleaning a TSV silicon substrate flip-chip bonding assembly of claim 7, wherein the cleaning process is accompanied by rotation or oscillation of the cleaning frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010105220.6A CN111276391A (en) | 2020-02-20 | 2020-02-20 | Cleaning method for TSV silicon substrate flip-chip welding assembly |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010105220.6A CN111276391A (en) | 2020-02-20 | 2020-02-20 | Cleaning method for TSV silicon substrate flip-chip welding assembly |
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| CN111276391A true CN111276391A (en) | 2020-06-12 |
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| CN202010105220.6A Pending CN111276391A (en) | 2020-02-20 | 2020-02-20 | Cleaning method for TSV silicon substrate flip-chip welding assembly |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112366155A (en) * | 2020-11-10 | 2021-02-12 | 西安微电子技术研究所 | Vacuum vapor phase cleaning jig and method for thick film deep cavity hybrid integrated circuit |
| CN113695704A (en) * | 2021-09-13 | 2021-11-26 | 安徽瑞迪微电子有限公司 | Method for cleaning residual soldering flux on surface of IGBT module |
| CN113917879A (en) * | 2021-10-29 | 2022-01-11 | 西安微电子技术研究所 | PowerPC-based miniaturized and high-reliability test and launch control system and working method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112366155A (en) * | 2020-11-10 | 2021-02-12 | 西安微电子技术研究所 | Vacuum vapor phase cleaning jig and method for thick film deep cavity hybrid integrated circuit |
| CN112366155B (en) * | 2020-11-10 | 2023-06-09 | 西安微电子技术研究所 | Vacuum vapor phase cleaning jig and method for thick film deep cavity hybrid integrated circuit |
| CN113695704A (en) * | 2021-09-13 | 2021-11-26 | 安徽瑞迪微电子有限公司 | Method for cleaning residual soldering flux on surface of IGBT module |
| CN113917879A (en) * | 2021-10-29 | 2022-01-11 | 西安微电子技术研究所 | PowerPC-based miniaturized and high-reliability test and launch control system and working method |
| CN113917879B (en) * | 2021-10-29 | 2023-05-16 | 西安微电子技术研究所 | Miniaturized and high-reliability test, initiation and control system based on PowerPC and working method |
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Application publication date: 20200612 |