CN111272771A - High-resolution particle detection device - Google Patents
High-resolution particle detection device Download PDFInfo
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- CN111272771A CN111272771A CN202010150475.4A CN202010150475A CN111272771A CN 111272771 A CN111272771 A CN 111272771A CN 202010150475 A CN202010150475 A CN 202010150475A CN 111272771 A CN111272771 A CN 111272771A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8822—Dark field detection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A50/00—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE in human health protection, e.g. against extreme weather
- Y02A50/20—Air quality improvement or preservation, e.g. vehicle emission control or emission reduction by using catalytic converters
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- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a high-resolution particle detection device, and belongs to the technical field of innovation of particle detection. The device comprises an isolation cover for isolating disturbance and pollution of personnel, air and the like; the bracket is used for supporting and positioning and connecting all the subsystems; the workpiece platform system is used for bearing a test sample wafer, adjusting the sample wafer to be coaxial with the imaging system, positioning a detection area and carrying out large-area detection stepping splicing; the imaging system is used for switching the objective lens, automatically focusing and detecting imaging; an illumination system for particle detection illumination; the control system is used for controlling the precise positioning of the workpiece table system, the switching of the objective lens and the automatic focusing and the image acquisition and processing. The device is based on the dark field imaging principle, and images through collecting the scattered light of particles, and then realizes the ability of obtaining the size and the distribution information of the particles on the sample wafer.
Description
Technical Field
The invention belongs to the technical field of particle detection, and particularly relates to a high-resolution particle detection device.
Background
In the field of near-field lithography, the degree of cleaning of the surface of a sample wafer is one of the important factors affecting the lithography quality, and how to effectively detect the contamination particles on the sample wafer is always a research hotspot in the field of near-field lithography. The cleanliness detection is used as a judging means of the cleaning process, so that a technician can determine whether the current cleaning process can meet the photoetching requirement, and the cleaning process is timely improved to improve the cleanliness of the sample wafer. The optical detection method based on dark field imaging is convenient for realizing online particle detection, meanwhile, compared with bright field imaging, dark field imaging inhibits the influence of background light, and has higher signal-to-noise ratio and image contrast, so that the method is more suitable for observing the particle boundary and outline.
The invention relates to a high-resolution particle detection device, which realizes high-resolution detection on the particle pollution condition on the surface of a sample wafer based on the dark field imaging principle.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: the device is based on a dark field imaging theory, and realizes high-resolution detection on the particle pollution condition on the surface of a sample wafer under the condition of not contacting the sample wafer to be tested.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a high resolution particle detection device comprises an isolation hood for isolating disturbance and pollution such as personnel, air and the like; the bracket is used for supporting and positioning and connecting all the subsystems; the workpiece platform system is used for bearing a test sample wafer, adjusting the sample wafer to be coaxial with the imaging system, positioning a detection area and carrying out large-area detection stepping splicing; the imaging system is used for switching the objective lens, automatically focusing and detecting imaging; an illumination system for particle detection illumination; the control system is used for controlling the precise positioning of the workpiece table system, the switching of the objective lens and the automatic focusing and the image acquisition and processing.
The workpiece platform system comprises a six-axis adjusting platform, a wafer bearing platform and a test sample wafer, wherein the test sample wafer is placed on the wafer bearing platform, and the wafer bearing platform is fixed on the six-axis adjusting platform. The six-axis adjusting platform needs to meet the requirements of adjusting the position and the posture of the test sample wafer, so that the requirements of detecting imaging and splicing and detecting the whole wafer are met. Wherein the wafer bearing platform is required to be compatible with the installation of different test sample wafers.
The imaging system comprises an imaging lens frame, an automatic focusing module, an objective lens switching module, an imaging objective lens and a CCD (charge coupled device), wherein the CCD is installed at the upper end of the imaging lens frame, the automatic focusing module is installed at the lower end of the imaging lens frame, the objective lens switching module is installed on the automatic focusing module, and the imaging objective lens is installed on the objective lens switching module. The automatic focusing module can quickly focus sample wafers with different thicknesses or surface shapes; the objective lens switching module can realize the quick switching among various objective lenses, and further meets the requirements of detection resolution and field of view. Each part of the imaging system needs to be precisely installed so as to ensure the coaxiality of the light path.
The illumination system comprises an illumination X/Y axis displacement table, an illumination Z/RX/RY axis displacement table, an illumination lens cone adjusting cylinder, an illumination lens cone, an illumination lens group, a laser and an optical fiber head, wherein the illumination Z/RX/RY axis displacement table is installed on the illumination X/Y axis displacement table, the illumination lens cone adjusting cylinder is installed on the illumination Z/RX/RY axis displacement table, the illumination lens cone is installed on the illumination lens cone adjusting cylinder, the illumination lens group is installed on the illumination lens cone, the optical fiber head is installed on the illumination lens cone, and the laser is connected with the optical fiber head through an optical fiber. The optical fiber head has the functions of beam expanding, collimation and the like; the X/Y axis displacement table and the illumination Z/RX/RY axis displacement table can adjust the angle and the position of illumination; the lighting lens barrel adjusting cylinder can adjust the focus of the lighting lens group.
The principle of the invention is as follows:
1. the device is based on the principle of dark field imaging, and realizes high-resolution detection on the particle pollution condition on the surface of the sample wafer.
2. The illumination light source of the device is subjected to beam expanding, collimating, reconcentration and other processing, and meanwhile, the illumination angle and the defocusing distance can be adjusted through the designed adjusting mechanism, so that the requirements on illumination area, uniformity, intensity and the like are met.
3. The automatic focusing module integrated by the device can quickly focus sample wafers with different thicknesses or surface shapes; the integrated objective lens switching module can realize the quick switching among various objective lenses, and further meets the requirements of detection resolution and field of view.
4. The workpiece platform system of the device can be compatible with the installation of different test sample wafers, and the position and the posture of the test sample wafer can be adjusted through the six-axis precision adjusting platform, so that the requirements of detection imaging and large-area splicing detection are met.
The invention has the beneficial effects that:
1. the device is based on a dark field imaging principle method, combines a high-power objective lens, automatic focusing and a high-resolution large-field CCD (charge coupled device), realizes detection of particle pollution on the surface of a sample wafer, and has resolution superior to 100 nm.
2. The illumination light source is integrated on the optical fiber head through processing such as beam expanding, collimating, reconcentrating and the like, and can adjust the illumination area, uniformity, intensity and the like. The optical fiber head is provided with an adjusting mechanism which can adjust the illumination angle and the defocusing distance.
3. The device can be used for quickly focusing sample wafers with different thicknesses or surface shapes and fluctuations through the integrated automatic focusing module, and can realize quick switching among various objective lenses through the integrated objective lens switching module, so that the requirements for detecting resolution and view fields are met.
4. The device is good in compatibility of the test sample wafer, and meanwhile, the position and the posture of the test sample wafer can be adjusted through the six-axis precise adjusting platform, so that the requirements for detection imaging and large-area splicing detection are met.
Drawings
FIG. 1 is an overall view of a high resolution particle detector according to the present invention;
FIG. 2 is a schematic diagram of a stage system of the high resolution particle detector of the present invention;
FIG. 3 is a block diagram of an imaging system of a high resolution particle detector of the present invention;
FIG. 4 is a diagram of an illumination system of a high resolution particle detector of the present invention;
FIG. 5 is a graph showing the detection results of a high-resolution particle detection apparatus according to the present invention, wherein FIG. 5(a) is the detection result of 100nm standard particles, and FIG. 5(b) is the detection result of 400nm standard particles;
reference numerals:
1 is a cage;
2 is a scaffold;
3 is a workpiece stage system;
3-1 is a six-axis adjusting platform;
3-2 is a wafer bearing platform;
3-3 is a test sample;
4 is an imaging system;
4-1 is an imaging frame;
4-2 is an autofocus module;
4-3 is an objective lens switching module;
4-4 is an imaging objective lens;
4-5 are CCD;
5 is a lighting system;
5-1 is an illumination X/Y axis displacement table;
5-2 is an illumination Z/RX/RY axis displacement stage;
5-3 is a lighting lens cone adjusting cylinder;
5-4 is an illumination lens barrel;
5-5 is an illumination lens group;
5-6 are lasers;
5-7 are optical fiber heads;
and 6 is a control system.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 1, a high-resolution particle detecting apparatus includes a shielding case 1 for shielding disturbance and contamination such as people and air; a bracket 2 for supporting and positioning and connecting the subsystems; the workpiece table system 3 is used for bearing a test sample wafer, adjusting the sample wafer to be coaxial with the imaging system, positioning a detection area and carrying out large-area detection stepping splicing; an imaging system 4 for objective switching, automatic focusing, detection imaging; an illumination system 5 for a particle detection illumination source; and the control system 6 is used for controlling the precise positioning of the workpiece table system, the switching of the objective lens, the automatic focusing and the image acquisition and processing. The isolation cover 1 isolates disturbance and pollution of personnel, air and the like, and ensures the cleanliness of a detection environment; the support 2 supports and positions and connects the subsystems, so that the stability of the whole device is ensured; the workpiece platform system 3 bears a test sample wafer on one hand, and positions a detection area by adjusting the sample wafer to be coaxial with the imaging system on the other hand, so that large-area stepping splicing detection is realized. The imaging system 4 ensures the fast switching of the imaging objective lens, realizes automatic focusing and displays the light scattering imaging image on the CCD; the lighting system 5 can adjust the lighting angle and position, and ensure the requirements of lighting area, uniformity, intensity and the like; the control system 6 ensures the precise positioning of the workpiece stage system, realizes the functions of objective lens switching and automatic focusing, and can collect and process images.
Referring to fig. 1, 2, 3 and 4, the basic flow of the sample particle detection is as follows: fixing a sample wafer 3-3 to be measured on the wafer bearing table 3-2, and adjusting the position and the posture of the sample wafer to be measured through the six-axis adjusting platform 3-1 so that the sample wafer to be measured and the imaging system 4 are in the same optical axis. And controlling the automatic focusing module 4-2 to realize automatic focusing, adjusting the illumination Z/RX/RY axis displacement table 5-2 to enable the illumination light source to irradiate on an automatic focusing focus, adjusting the illumination lens barrel adjusting cylinder 5-3 to enable the illumination light source to focus on the sample wafer to be detected, and observing the particle pollution condition of the sample wafer through the CCD 4-5. The sample wafer can be subjected to large-area stepping splicing detection by moving the six-axis adjusting platform 3-1.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto. Any person skilled in the art can appreciate that modifications and substitutions are included within the scope of the invention disclosed. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (1)
1. A high-resolution particle detection device is characterized in that: the device includes: an isolation cover (1) for isolating disturbance and pollution of personnel, air and the like; a bracket (2) for supporting and positioning the connected subsystems; the workpiece platform system (3) is used for bearing a test sample wafer, adjusting the sample wafer to be coaxial with the imaging system, positioning a detection area and carrying out large-area detection stepping splicing; an imaging system (4) for objective switching, auto focusing, detection imaging; an illumination system (5) for particle detection illumination; a control system (6) for controlling the precise positioning of the workpiece stage system, the switching of the objective lens and the automatic focusing, and the image acquisition and processing; wherein:
the workpiece platform system (3) comprises a six-axis adjusting platform (3-1), a wafer bearing platform (3-2) and a test sample wafer (3-3), wherein the test sample wafer (3-3) is placed on the wafer bearing platform (3-2), and the wafer bearing platform (3-2) is fixed on the six-axis adjusting platform (3-1). The six-axis adjusting platform (3-1) needs to meet the requirements of adjusting the position and the posture of the test sample wafer (3-3) so as to meet the requirements of detecting imaging and splicing and detecting the whole wafer, wherein the wafer bearing platform (3-2) needs to be compatible with the installation of different test sample wafers (3-3);
the imaging system (4) comprises an imaging lens frame (4-1), an automatic focusing module (4-2), an objective lens switching module (4-3), an imaging objective lens (4-4) and a CCD (4-5), wherein the CCD (4-5) is installed at the upper end of the imaging lens frame (4-1), the automatic focusing module (4-2) is installed at the lower end of the imaging lens frame (4-1), the objective lens switching module (4-3) is installed on the automatic focusing module (4-2), and the imaging objective lens (4-4) is installed on the objective lens switching module (4-3), wherein the automatic focusing module (4-2) can rapidly focus sample wafers with different thicknesses or surface undulations; the objective switching module (4-3) can realize the rapid switching among various objectives so as to meet the requirements of detection resolution and field of view, and each part of the imaging system (4) needs to be precisely installed to ensure the coaxiality of light paths;
the illumination system (5) comprises an illumination X/Y axis displacement table (5-1), an illumination Z/RX/RY axis displacement table (5-2), an illumination lens barrel adjusting cylinder (5-3), an illumination lens barrel (5-4), an illumination lens group (5-5), a laser (5-6) and a fiber head (5-7), wherein the illumination Z/RX/RY axis displacement table (5-2) is installed on the illumination X/Y axis displacement table (5-1), the illumination lens barrel adjusting cylinder (5-3) is installed on the illumination Z/RX/RY axis displacement table (5-2), the illumination lens barrel (5-4) is installed on the illumination lens barrel adjusting cylinder (5-3), and the illumination lens group (5-5) is installed on the illumination lens barrel (5-4), the optical fiber head (5-7) is arranged on the lighting lens barrel (5-4), the laser (5-6) is connected with the optical fiber head (5-7) through an optical fiber, wherein the optical fiber head (5-7) has the functions of beam expanding, collimation and the like; the X/Y axis displacement table (5-1) and the illumination Z/RX/RY axis displacement table (5-2) can adjust the angle and the position of illumination; the lighting lens cone adjusting cylinder (5-3) can adjust the focus of the lighting lens group (5-5).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010150475.4A CN111272771B (en) | 2020-03-03 | 2020-03-03 | High-resolution particle detection device |
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| CN202010150475.4A CN111272771B (en) | 2020-03-03 | 2020-03-03 | High-resolution particle detection device |
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| CN111272771A true CN111272771A (en) | 2020-06-12 |
| CN111272771B CN111272771B (en) | 2023-03-31 |
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2020
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| CA2775506A1 (en) * | 2011-04-29 | 2012-10-29 | ProteinSimple | Method and particle analyzer for determining a broad particle size distribution |
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