CN111262133A - Method for improving single-layer two-dimensional semiconductor light-emitting brightness - Google Patents

Method for improving single-layer two-dimensional semiconductor light-emitting brightness Download PDF

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CN111262133A
CN111262133A CN202010056849.6A CN202010056849A CN111262133A CN 111262133 A CN111262133 A CN 111262133A CN 202010056849 A CN202010056849 A CN 202010056849A CN 111262133 A CN111262133 A CN 111262133A
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吴汉春
吕燕会
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Beijing Institute of Technology BIT
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser

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Abstract

本发明涉及一种提高单层二维半导体发光亮度的方法,属于量子光学和光子量子信息技术领域。本发明集成单层二维半导体与表面具有凸起结构的三维半导体形成复合异质结构,产生了一个大大增强的耦合系统,大大提高了单层二维半导体的发光亮度。简单而高效的硅基复合异质结构是完全可扩展的,有望作为具有高亮度、长期稳定性、芯片可集成性的量子光源,属于量子光学和光子量子信息技术领域。

Figure 202010056849

The invention relates to a method for improving the luminous brightness of a single-layer two-dimensional semiconductor, belonging to the technical fields of quantum optics and photonic quantum information. The invention integrates a single-layer two-dimensional semiconductor and a three-dimensional semiconductor with a convex structure on the surface to form a composite heterostructure, which produces a greatly enhanced coupling system and greatly improves the luminous brightness of the single-layer two-dimensional semiconductor. The simple and efficient silicon-based composite heterostructure is fully scalable and holds promise as a quantum light source with high brightness, long-term stability, and chip integratability, belonging to the fields of quantum optics and photonic quantum information technology.

Figure 202010056849

Description

一种提高单层二维半导体发光亮度的方法A method for improving the luminous brightness of a single-layer two-dimensional semiconductor

技术领域technical field

本发明涉及一种提高单层二维半导体发光亮度的方法,简单而高效的硅基复合异质结构有望作为具有高亮度、长期稳定性、芯片可集成性的量子光源,属于量子光学和光子量子信息技术领域。The invention relates to a method for improving the luminous brightness of a single-layer two-dimensional semiconductor. The simple and efficient silicon-based composite heterostructure is expected to be used as a quantum light source with high brightness, long-term stability and chip integration, belonging to quantum optics and photonic quantum light sources. field of information technology.

背景技术Background technique

单量子发射器(SQE)是量子光学和光子量子信息技术的核心,SQE对于量子信息处理的许多应用都是必不可少的。单层过渡金属硫族化物(TMDC)具有大的激子结合能,并且在室温下层内激子具有长寿命,这使其特别适合单量子发射器的应用。这种非经典光源的核心要求包括长期稳定性,高亮度,以及芯片上的可集成性。Single quantum emitters (SQEs) are at the heart of quantum optics and photonic quantum information technologies, and SQEs are essential for many applications in quantum information processing. Monolayer transition metal dichalcogenides (TMDCs) have large exciton binding energies and long exciton lifetimes within the layers at room temperature, which make them particularly suitable for single quantum emitter applications. The core requirements of this non-classical light source include long-term stability, high brightness, and on-chip integratability.

然而,获得高的光致发光量子产率在单层二维材料中仍然具有挑战。比如,将机械剥离的单层WSe2集成到硅基光子结构上,只实现了8倍的光致发光增强;通过弹性应变工程增强单层二维材料的发光,也只有几倍的增强。生长的单分子层通常比其机械剥离的单分子层表现出更低的光致发光量子产率,将生长的WSe2单层材料耦合到圆形布拉格光栅结构上,观察到激子发射增强了7倍;最近报道的通过溶剂蒸发使生长的WSe2单分子膜机械松弛与基底解耦,与基板耦合生长的单分子层相比实现的光致发光的发射增强也只有一个数量级。尽管提出了许多解决方案来增强单层二维半导体的量子发射,但是实现更高效的光子提取效率、高集成性和可扩展性仍然需要开辟新的方法。而采用本申请的一种简单而高效的复合异质结构,可产生一个大大增强的耦合系统,使单层二维半导体的发光效率大大提高,例如我们在实验室中使化学气相沉积(CVD)法生长的WSe2单层材料的发光提高了两个数量级。However, obtaining high photoluminescence quantum yields remains challenging in monolayer 2D materials. For example, the integration of mechanically exfoliated single-layer WSe 2 onto a silicon-based photonic structure achieves only an 8-fold enhancement of photoluminescence; the enhancement of the luminescence of a single-layer 2D material through elastic strain engineering is also only a few-fold enhancement. The grown monolayers generally exhibit lower photoluminescence quantum yields than their mechanically exfoliated monolayers. Coupling the grown WSe monolayers onto a circular Bragg grating structure, enhanced exciton emission is observed. 7 times; the recently reported mechanical relaxation of grown WSe 2 monolayers by solvent evaporation is decoupled from the substrate, and the emission enhancement of photoluminescence achieved is also only one order of magnitude compared to substrate-coupled grown monolayers. Although many solutions have been proposed to enhance quantum emission in single-layer 2D semiconductors, achieving more efficient photon extraction efficiency, high integration, and scalability still needs to open up new approaches. Using a simple and efficient composite heterostructure of the present application, a greatly enhanced coupling system can be produced, resulting in greatly improved luminous efficiency of single-layer two-dimensional semiconductors, such as chemical vapor deposition (CVD) in our laboratory. The luminescence of the WSe 2 monolayer material grown by the method was improved by two orders of magnitude.

单层二维半导体和表面具有凸起结构的三维半导体形成的复合系统提高了发光强度,主要是利用三维半导体的特殊结构在特定的部位有较大的载流子浓度,与单层二维半导体在接触部位发生耦合,产生层间激子跃迁,为单层二维半导体注入额外的激子,同时单层二维半导体受到局部应变发生带隙连续变化产生激子漏斗效应,这两种影响最终使单层二维半导体的发光大大提高。The composite system formed by a single-layer two-dimensional semiconductor and a three-dimensional semiconductor with a convex structure on the surface improves the luminous intensity, mainly by using the special structure of the three-dimensional semiconductor to have a larger carrier concentration in a specific part, which is different from the single-layer two-dimensional semiconductor. Coupling occurs at the contact site, resulting in interlayer exciton transitions, injecting additional excitons into the monolayer 2D semiconductor, and at the same time, the monolayer 2D semiconductor is subjected to local strain and the band gap continuously changes to produce an exciton funnel effect. These two effects ultimately The luminescence of single-layer two-dimensional semiconductors is greatly improved.

发明内容SUMMARY OF THE INVENTION

本发明的目的是为了解决现有技术存在光子提取效率低,集成性和扩展性受限的问题,提供一种提高单层二维半导体发光亮度的方法。该方法提供了一种简单而高效的复合异质结构,提高了单层二维半导体的发光亮度、实现了制造工艺的可扩展性和芯片上的可集成性。The purpose of the present invention is to solve the problems of low photon extraction efficiency and limited integration and expansibility in the prior art, and to provide a method for improving the luminous brightness of a single-layer two-dimensional semiconductor. This method provides a simple and efficient composite heterostructure that enhances the luminescence brightness of single-layer 2D semiconductors, and enables scalability of the fabrication process and on-chip integration.

本发明的目的是通过下述技术方案实现的。The purpose of the present invention is achieved through the following technical solutions.

一种提高单层二维半导体发光亮度的方法,将单层二维半导体集成于表面具有凸起结构的三维半导体:单层二维半导体与三维半导体耦合产生激子漏斗效应和激子注入效应,从而达到提高单层二维半导体发光的目的。A method for improving the luminous brightness of a single-layer two-dimensional semiconductor, integrating the single-layer two-dimensional semiconductor into a three-dimensional semiconductor with a convex structure on the surface: the coupling of the single-layer two-dimensional semiconductor and the three-dimensional semiconductor produces an exciton funnel effect and an exciton injection effect, Thereby, the purpose of improving the luminescence of the single-layer two-dimensional semiconductor is achieved.

具体物理原理为:表面具有凸起结构的三维半导体使单层二维半导体产生局部应变,单层二维半导体的能带结构发生改变,形成激子漏斗效应;在单层二维半导体与表面具有凸起结构的三维半导体接触部位存在层间激子跃迁,可为单层二维半导体注入额外的激子;激子注入效率依赖于栅极电压,因此能够用栅极电压进一步调节。利用单层二维半导体与表面具有凸起结构的三维半导体组成的复合异质结构,形成的激子漏斗效应与层间激子跃迁共同产生影响,达到提高单层二维半导体发光亮度的目的。The specific physical principle is: the three-dimensional semiconductor with the convex structure on the surface causes local strain in the single-layer two-dimensional semiconductor, the energy band structure of the single-layer two-dimensional semiconductor changes, and the exciton funnel effect is formed; There are interlayer exciton transitions in the 3D semiconductor contacts of the raised structure, which can inject additional excitons into the monolayer 2D semiconductor; the exciton injection efficiency depends on the gate voltage, so it can be further adjusted by the gate voltage. Using a composite heterostructure composed of a single-layer two-dimensional semiconductor and a three-dimensional semiconductor with a convex structure on the surface, the exciton funnel effect and interlayer exciton transitions formed together have an influence to achieve the purpose of improving the luminescence brightness of a single-layer two-dimensional semiconductor.

采用上述方法制备的具有高亮度、长期稳定性和芯片可集成性的量子光源,包括:单层二维半导体、表面具有凸起结构的三维半导体、介电层、导电电极、导线以及激光光源;所述单层二维半导体置于表面具有凸起结构的三维半导体上形成复合异质结构,用激光光源照射单层二维半导体,在单层二维半导体上覆盖介电层,在介电层和表面具有凸起结构的三维半导体上连接导线和导电电极,方便复合异质结构接入电子系统,通过施加栅压进行调控。The quantum light source with high brightness, long-term stability and chip integration prepared by the above method includes: a single-layer two-dimensional semiconductor, a three-dimensional semiconductor with a convex structure on the surface, a dielectric layer, a conductive electrode, a wire and a laser light source; The single-layer two-dimensional semiconductor is placed on a three-dimensional semiconductor with a convex structure on the surface to form a composite heterostructure, the single-layer two-dimensional semiconductor is irradiated with a laser light source, a dielectric layer is covered on the single-layer two-dimensional semiconductor, and the dielectric layer is A wire and a conductive electrode are connected to a three-dimensional semiconductor with a convex structure on the surface, so that the composite heterostructure can be easily connected to an electronic system, and the gate voltage can be applied for regulation.

所述单层二维半导体,是指在一个维度上处于纳米尺度范围的材料。例如但不限定只有这些,包括单层WSe2、WS2、GaSe、MoSe2、MoS2、MoTe2、SnSe2、GeSe和石墨烯等。The single-layer two-dimensional semiconductor refers to a material in the nanoscale range in one dimension. For example, but not limited to these, including single-layer WSe 2 , WS 2 , GaSe, MoSe 2 , MoS 2 , MoTe 2 , SnSe 2 , GeSe, and graphene.

所述表面具有凸起结构的三维半导体,是用于耦合单层二维半导体的衬底,可为具有形变或局部形变的任何硅基三维半导体,例如皱纹结构,其波长,幅度,横向蚀刻深度,掺杂浓度为可调参数。三维半导体的凸起结构引起单层二维半导体的局部应变,导致能隙连续变化改变载流子的运动。根据最终计划和应用的场景不同,采用不同参数的结构和尺寸。The three-dimensional semiconductor with a raised structure on the surface is a substrate for coupling a single-layer two-dimensional semiconductor, which can be any silicon-based three-dimensional semiconductor with deformation or local deformation, such as a wrinkle structure, its wavelength, amplitude, lateral etching depth , the doping concentration is an adjustable parameter. The raised structure of the 3D semiconductor induces local strain in the monolayer 2D semiconductor, resulting in a continuous change in the energy gap to change the motion of the carriers. The structure and size of different parameters are adopted according to the final plan and application scenarios.

所述激光光源照射单层二维半导体,是指在光致发光(PL)的表征过程中,在整个结构上线扫描得到三维PL强度映射。可根据所述单层二维半导体选择激光波长、激光功率。The single-layer two-dimensional semiconductor is irradiated by the laser light source, which means that in the process of photoluminescence (PL) characterization, the three-dimensional PL intensity map is obtained by online scanning of the entire structure. The laser wavelength and laser power can be selected according to the single-layer two-dimensional semiconductor.

所述介电层,是指用来施加栅压的绝缘层。所述介电层的制备方法可通过旋涂、蒸镀或溅射。The dielectric layer refers to an insulating layer used for applying gate voltage. The preparation method of the dielectric layer may be spin coating, evaporation or sputtering.

所述栅压,是指施加在所述单层二维半导体和所述表面具有凸起结构的三维半导体之间的电场,影响激子的注入和跃迁,从而影响单层二维半导体的发光。The gate voltage refers to the electric field applied between the single-layer two-dimensional semiconductor and the three-dimensional semiconductor with a convex structure on the surface, which affects the injection and transition of excitons, thereby affecting the light emission of the single-layer two-dimensional semiconductor.

所述导电电极,是指使用任意方法,在所述单层二维半导体和所述表面具有凸起结构的三维半导体上形成导电电极。例如光刻法形成模板后用镀膜机镀上一层金属。The conductive electrode refers to forming a conductive electrode on the single-layer two-dimensional semiconductor and the three-dimensional semiconductor having a convex structure on the surface using any method. For example, after the template is formed by photolithography, a layer of metal is coated with a coating machine.

所述连接导线,是指具有能将复合异质结构接入电子系统的功能的部分,并非必须有导线,只要复合异质结构能够接入电子系统即可。The connecting wire refers to the part having the function of connecting the composite heterostructure to the electronic system, and it is not necessary to have a wire, as long as the composite heterostructure can be connected to the electronic system.

所述电子系统,是指可在所述单层二维半导体和所述表面具有凸起结构的三维半导体之间施加电压的电子系统。The electronic system refers to an electronic system that can apply a voltage between the single-layer two-dimensional semiconductor and the three-dimensional semiconductor with a convex structure on the surface.

有益效果beneficial effect

本发明提供一种提高单层二维半导体发光亮度的方法,集成单层二维半导体与表面具有凸起结构的三维半导体形成复合异质结构,产生了一个大大增强的耦合系统,大大提高了单层二维半导体的发光亮度。简单而高效的硅基复合异质结构是完全可扩展的,有望作为具有高亮度、长期稳定性、芯片可集成性的量子光源,属于量子光学和光子量子信息技术领域。The invention provides a method for improving the luminous brightness of a single-layer two-dimensional semiconductor, which integrates a single-layer two-dimensional semiconductor and a three-dimensional semiconductor with a convex structure on the surface to form a composite heterostructure, resulting in a greatly enhanced coupling system, which greatly improves the single-layer two-dimensional semiconductor. Luminescence brightness of layer two-dimensional semiconductors. The simple and efficient silicon-based composite heterostructure is fully scalable and holds promise as a quantum light source with high brightness, long-term stability, and chip integratability, belonging to the fields of quantum optics and photonic quantum information technology.

附图说明Description of drawings

图1为步骤1,表面具有凸起结构的三维半导体;Figure 1 shows step 1, a three-dimensional semiconductor with a raised structure on the surface;

图2为步骤2,转移单层二维半导体到表面具有凸起结构的三维半导体上;FIG. 2 shows step 2, transferring a single-layer two-dimensional semiconductor to a three-dimensional semiconductor with a raised structure on the surface;

图3为步骤3,用激光光源照射单层二维半导体测试PL;Figure 3 shows step 3, irradiating a single-layer two-dimensional semiconductor test PL with a laser light source;

图4为步骤4,通过导线将复合异质结构接入电子系统,用激光光源照射单层二维半导体测试PL;FIG. 4 is step 4, the composite heterostructure is connected to the electronic system through the wire, and the single-layer two-dimensional semiconductor test PL is irradiated with a laser light source;

图5为单层二维半导体与表面具有凸起结构的三维半导体形成的复合异质结构的简易三维视图;5 is a simplified three-dimensional view of a composite heterostructure formed by a single-layer two-dimensional semiconductor and a three-dimensional semiconductor having a raised structure on the surface;

图6为复合异质结构提高单层二维半导体发光的原理示意图;FIG. 6 is a schematic diagram of the principle of improving the luminescence of a single-layer two-dimensional semiconductor by a composite heterostructure;

图7为实验测试案例;Figure 7 is an experimental test case;

图8为WSe2单层与三维周期性SiGe皱纹结构形成的复合异质结构中的激子动力学示意图。Figure 8 is a schematic diagram of the exciton dynamics in the composite heterostructure formed by the WSe 2 monolayer and the three-dimensional periodic SiGe wrinkled structure.

具体实施方式Detailed ways

为使本发明实施的目的、技术方案和优点更加清楚,下面将结合本发明示例中的附图,对发明示例中的方案进行更加详细的描述。在附图中,相同或者类似的符号表示相同或类似的元件或具有相同或者类似功能的元件。所描述的示例是本发明一部分的实例,而不是全部的实例。In order to make the objectives, technical solutions and advantages of the present invention clearer, the solutions in the examples of the present invention will be described in more detail below with reference to the drawings in the examples of the present invention. In the drawings, the same or similar symbols denote the same or similar elements or elements having the same or similar functions. The described examples are examples of some, but not all, of the invention.

下面通过参考附图描述的实例是示例性的,旨在用于解释本发明,而不能理解为本发明的限制。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下获得所有其他实施例,都属于本发明保护的范围,下面结合附图对本发明的实施例进行详细说明。The examples described below with reference to the accompanying drawings are exemplary and are intended to explain the present invention and should not be construed as limitations of the present invention. Based on the embodiments of the present invention, those of ordinary skill in the art can obtain all other embodiments without creative work, which belong to the protection scope of the present invention. The embodiments of the present invention are described in detail below with reference to the accompanying drawings.

在本发明的描述中,需要理解的是,术语“中等”、“降低”、“低水平”、“较高水平”、“较低水平”、“较大”、“大幅”和“叠加”等知识的方位、位置或者程度关系为基于附图所示的方位、位置或者程度关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或者元件所必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明保护范围的限制。In the description of the present invention, it is to be understood that the terms "moderate", "reduced", "low level", "higher level", "lower level", "larger", "substantially" and "overlay" The orientation, position or degree relationship of the knowledge is based on the orientation, position or degree relationship shown in the accompanying drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific Orientation, construction and operation in a particular orientation, and therefore should not be construed as limiting the scope of protection of the present invention.

实施例1Example 1

一种提高单层二维半导体发光亮度的方法,如图5所示,采用表面具有凸起结构的三维半导体:使单层二维半导体与具有特定结构的三维半导体耦合的同时发生局部应变产生激子漏斗效应,从而达到提高单层二维半导体的发光的目的。A method for improving the luminescence brightness of a single-layer two-dimensional semiconductor, as shown in Figure 5, adopts a three-dimensional semiconductor with a convex structure on the surface: the single-layer two-dimensional semiconductor is coupled with a three-dimensional semiconductor with a specific structure, and local strain occurs simultaneously to generate excitation. sub-funnel effect, so as to achieve the purpose of improving the luminescence of single-layer two-dimensional semiconductors.

采用上述方法制备的复合异质结构,包括:单层二维半导体、表面具有凸起结构的三维半导体、介电层、导电电极、导线以及激光光源;所述单层二维半导体置于表面具有凸起结构的三维半导体上形成复合异质结构,用激光照射单层二维半导体,观察其PL的变化,在单层二维半导体上覆盖介电层,在介电层和表面具有凸起结构的三维半导体上连接导线,方便复合异质结构接入电子系统中,通过施加栅压进行调控。The composite heterostructure prepared by the above method includes: a single-layer two-dimensional semiconductor, a three-dimensional semiconductor with a convex structure on the surface, a dielectric layer, a conductive electrode, a wire and a laser light source; the single-layer two-dimensional semiconductor is placed on the surface with a A compound heterostructure is formed on the three-dimensional semiconductor with a convex structure, and the single-layer two-dimensional semiconductor is irradiated with a laser to observe the change of its PL. The single-layer two-dimensional semiconductor is covered with a dielectric layer, and the dielectric layer and the surface have a convex structure The three-dimensional semiconductor is connected with wires, which is convenient for the composite heterostructure to be connected to the electronic system, and can be controlled by applying gate voltage.

所述具有高亮度、长期稳定性、芯片可集成性的量子光源的工作方法如下:The working method of the quantum light source with high brightness, long-term stability and chip integration is as follows:

如附图1中所示,操作步骤1,制备表面具有凸起结构的三维半导体,这里举例为使用标准的互补金属氧化物半导体(CMOS)兼容处理技术(包括光刻和反应离子蚀刻技术)制备三维周期性的SiGe皱纹结构。As shown in FIG. 1 , in operation step 1, a three-dimensional semiconductor with a raised structure on the surface is prepared, which is exemplified here by using standard Complementary Metal Oxide Semiconductor (CMOS) compatible processing techniques (including photolithography and reactive ion etching techniques). Three-dimensional periodic SiGe wrinkle structure.

如附图2中所示,操作步骤2,将单层二维半导体转移到表面具有凸起结构的三维半导体,这里举例为利用湿法转移将CVD法生长的WSe2单层材料转移到三维周期性的SiGe皱纹结构上。As shown in FIG. 2 , in operation step 2, a single-layer two-dimensional semiconductor is transferred to a three-dimensional semiconductor with a convex structure on the surface. Here, an example is the use of wet transfer to transfer the CVD-grown WSe 2 single-layer material to a three-dimensional periodic on the wrinkled structure of SiGe.

如附图3中所示,用波长为532nm的激光光源照射WSe2单层材料不同位置,在整个结构上线扫描得到三维PL强度映射,观察不同位置PL的变化。As shown in Figure 3, a laser light source with a wavelength of 532 nm was used to irradiate different positions of the WSe 2 monolayer material, and the entire structure was scanned online to obtain a three-dimensional PL intensity map, and the PL changes at different positions were observed.

如附图4中所示,操作步骤4,在单层二维半导体上旋涂聚甲基丙烯酸甲酯(PMMA)作为介电层,导线连接在介电层材料和三维周期性的SiGe皱纹结构上,使复合异质结构接入可施加电压的仪表上。施加不同的电压,测试WSe2单层材料上同一位置的光致发光的变化,观察其与电压的关系。As shown in Figure 4, in operation step 4, polymethyl methacrylate (PMMA) is spin-coated on a single-layer two-dimensional semiconductor as a dielectric layer, and wires are connected to the dielectric layer material and the three-dimensional periodic SiGe wrinkle structure , connect the composite heterostructure to a meter that can apply a voltage. Apply different voltages to test the change of photoluminescence at the same position on the WSe 2 monolayer material, and observe its relationship with voltage.

如附图6中所示,关于提高单层二维半导体发光亮度原理的简单说明,单层二维半导体转移到表面具有凸起结构的三维半导体上时,使单层二维半导体产生局部应变,这会导致所述单层二维半导体的能带结构发生改变,反映为所述单层二维半导体的载流子浓度的改变,激子将向局部应变最大而带隙最小的位置漂移,发光强度提高到中等水平;同时表面具有凸起结构的三维半导体在特定的部位有较大的载流子浓度,单层二维半导体与三维半导体接触部位存在层间激子跃迁,可为单层二维半导体注入额外的激子,使单层二维半导体的发光强度提高到一个较高水平,并且激子注入效率依赖于栅极电压,因此能够用栅极电压进行调控。因为单层二维半导体与表面具有凸起结构的三维半导体的特殊集成,两种影响共同贡献,产生一个大大增强的耦合系统,使基于生长的单层二维半导体的发光效率大大提高。As shown in FIG. 6, a brief description of the principle of improving the luminance of a single-layer two-dimensional semiconductor, when the single-layer two-dimensional semiconductor is transferred to a three-dimensional semiconductor with a convex structure on the surface, local strain is generated in the single-layer two-dimensional semiconductor, This will lead to the change of the energy band structure of the single-layer two-dimensional semiconductor, which is reflected as the change of the carrier concentration of the single-layer two-dimensional semiconductor. The strength is increased to a medium level; at the same time, the three-dimensional semiconductor with a convex structure on the surface has a large carrier concentration in a specific part, and there is an interlayer exciton transition at the contact part between the single-layer two-dimensional semiconductor and the three-dimensional semiconductor, which can be a single-layer two-dimensional semiconductor. The 2D semiconductor injects additional excitons to increase the luminous intensity of the monolayer 2D semiconductor to a higher level, and the exciton injection efficiency depends on the gate voltage, so it can be regulated by the gate voltage. Because of the special integration of monolayer 2D semiconductors with 3D semiconductors with raised structures on the surface, the two effects contribute together, resulting in a greatly enhanced coupled system that enables greatly improved luminous efficiency of growth-based monolayer 2D semiconductors.

如附图7中所示,这是为了方便理解给出的实验测试数据。测试材料为WSe2单层半导体,图A是该样品在SiO2/Si基底上,测得PL强度~300;图B是该样品在三维周期性SiGe皱纹结构半导体上,测得PL强度~40000,WSe2单层材料的PL强度提高两个数量级以上。图C是该样品在三维周期性SiGe皱纹结构半导体上的PL强度随施加栅压的变化,测得PL强度随栅压增大而增大,即可通过栅压进一步调控WSe2的发光强度。As shown in FIG. 7, this is for the convenience of understanding the experimental test data given. The test material is WSe 2 single-layer semiconductor. Figure A is the sample on SiO 2 /Si substrate, and the measured PL intensity is ~300; Figure B is the sample on the three-dimensional periodic SiGe wrinkled structure semiconductor, and the measured PL intensity is ~40000 , the PL strength of the WSe 2 monolayer material is improved by more than two orders of magnitude. Figure C shows the change of the PL intensity of the sample on the three-dimensional periodic SiGe wrinkled structure semiconductor with the applied gate voltage. The measured PL intensity increases with the increase of the gate voltage, and the luminescence intensity of WSe 2 can be further regulated by the gate voltage.

如附图8中所示,这是WSe2单层与三维周期性SiGe皱纹结构形成的复合异质结构中的激子动力学示意图,表明了激子漏斗效应和激子跃迁两种影响共同作用大大提高WSe2单层材料的发光。As shown in Fig. 8, this is a schematic diagram of exciton dynamics in the composite heterostructure formed by WSe monolayer and three-dimensional periodic SiGe wrinkled structure, indicating that the two effects of exciton funnel effect and exciton transition work together Greatly improve the luminescence of WSe 2 monolayer material.

以上所述的具体描述,对发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施例而已,并不用于限定本发明的保护范围,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above-mentioned specific descriptions further describe the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above-mentioned descriptions are only specific embodiments of the present invention, and are not intended to limit the protection of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims (10)

1.一种提高单层二维半导体发光亮度的方法,其特征在于:将单层二维半导体集成于表面具有凸起结构的三维半导体:单层二维半导体与三维半导体耦合产生激子漏斗效应和激子注入效应,从而达到提高单层二维半导体发光的目的。1. a method for improving the luminous brightness of monolayer two-dimensional semiconductor is characterized in that: monolayer two-dimensional semiconductor is integrated in the three-dimensional semiconductor with convex structure on the surface: monolayer two-dimensional semiconductor and three-dimensional semiconductor are coupled to produce exciton funnel effect And exciton injection effect, so as to achieve the purpose of improving the luminescence of single-layer two-dimensional semiconductor. 表面具有凸起结构的三维半导体使单层二维半导体产生局部应变,单层二维半导体的能带结构发生改变,形成激子漏斗效应;在单层二维半导体与三维半导体接触部位存在激子跃迁,能够为单层二维半导体注入额外的激子;激子注入效率依赖于栅极电压,因此能够用栅极电压对其进一步调节。利用单层二维半导体与表面具有凸起结构的三维半导体组成的复合异质结构,形成的激子漏斗效应与层间激子跃迁共同产生影响,达到提高单层二维半导体发光亮度的目的。The three-dimensional semiconductor with a convex structure on the surface causes local strain in the single-layer two-dimensional semiconductor, and the energy band structure of the single-layer two-dimensional semiconductor changes, forming an exciton funnel effect; there are excitons at the contact position between the single-layer two-dimensional semiconductor and the three-dimensional semiconductor. transition, which can inject additional excitons into the monolayer 2D semiconductor; the exciton injection efficiency is gate voltage-dependent, so it can be further tuned with the gate voltage. Using a composite heterostructure composed of a single-layer two-dimensional semiconductor and a three-dimensional semiconductor with a convex structure on the surface, the exciton funnel effect and interlayer exciton transitions formed together have an influence to achieve the purpose of improving the luminescence brightness of a single-layer two-dimensional semiconductor. 2.采用如权利要求1所述方法法制备的具有高亮度、长期稳定性和芯片可集成性的量子光源,其特征在于:包括:单层二维半导体、表面具有凸起结构的三维半导体、介电层、导电电极、导线以及激光光源;所述单层二维半导体置于表面具有凸起结构的三维半导体上形成复合异质结构,用激光光源照射单层二维半导体,在单层二维半导体上覆盖介电层,在介电层和表面具有凸起结构的三维半导体上连接导线和导电电极,方便复合异质结构接入电子系统,通过施加栅压进行调控。2. The quantum light source with high brightness, long-term stability and chip integratability prepared by the method as claimed in claim 1, characterized in that: comprising: a single-layer two-dimensional semiconductor, a three-dimensional semiconductor with a raised structure on the surface, A dielectric layer, a conductive electrode, a wire and a laser light source; the single-layer two-dimensional semiconductor is placed on a three-dimensional semiconductor with a convex structure on the surface to form a composite heterostructure, and the single-layer two-dimensional semiconductor is irradiated with a laser light source, and the single-layer two-dimensional semiconductor is irradiated with a laser light source. The three-dimensional semiconductor is covered with a dielectric layer, and wires and conductive electrodes are connected on the dielectric layer and the three-dimensional semiconductor with a raised structure on the surface, which facilitates the access of the composite heterostructure to the electronic system, and is regulated by applying gate voltage. 3.如权利要求2所述的量子光源,其特征在于:所述单层二维半导体,是指在一个维度上处于纳米尺度范围的材料。例如单层WSe2、WS2、GaSe、MoSe2、MoS2、MoTe2、SnSe2、GeSe和石墨烯。3 . The quantum light source according to claim 2 , wherein the single-layer two-dimensional semiconductor refers to a material in the nanoscale range in one dimension. 4 . For example monolayer WSe 2 , WS 2 , GaSe, MoSe 2 , MoS 2 , MoTe 2 , SnSe 2 , GeSe and graphene. 4.如权利要求1所述的方法,其特征在于:所述表面具有凸起结构的三维半导体为任何具有形变或局部形变的三维硅基半导体。例如皱纹结构,其波长,幅度,横向蚀刻深度,掺杂浓度为可调参数。三维半导体的凸起结构引起单层二维半导体的局部应变,导致能隙连续变化改变载流子的运动,根据最终计划和应用的场景不同,采用不同参数的结构和尺寸。4 . The method of claim 1 , wherein the three-dimensional semiconductor with a convex structure on the surface is any three-dimensional silicon-based semiconductor with deformation or local deformation. 5 . For example, the wrinkle structure, its wavelength, amplitude, lateral etching depth, and doping concentration are adjustable parameters. The protruding structure of the 3D semiconductor induces local strain in the single-layer 2D semiconductor, resulting in a continuous change in the energy gap to change the motion of the carriers, and the structure and size with different parameters are adopted depending on the final plan and the application scenario. 5.如权利要求2所述的量子光源,其特征在于:所述激光光源照射单层二维半导体,是指在光致发光的表征过程中,在整个结构上线扫描得到三维光致发光(PL)强度映射。5. The quantum light source according to claim 2, wherein the laser light source irradiates a single-layer two-dimensional semiconductor, which means that in the characterization process of photoluminescence, three-dimensional photoluminescence (PL) is obtained by scanning the entire structure online. ) intensity map. 6.如权利要求2所述的量子光源,其特征在于:所述介电层,是指用来施加栅压的绝缘层。所述介电层的制备方法为旋涂、蒸镀或溅射。6 . The quantum light source of claim 2 , wherein the dielectric layer is an insulating layer used to apply a gate voltage. 7 . The preparation method of the dielectric layer is spin coating, evaporation or sputtering. 7.如权利要求2所述的量子光源,其特征在于:所述栅压,是指施加在所述单层二维半导体和所述表面具有凸起结构的三维半导体之间的电场,影响激子的注入和跃迁,从而影响单层二维半导体的发光。7. The quantum light source according to claim 2, wherein: the gate voltage refers to the electric field applied between the single-layer two-dimensional semiconductor and the three-dimensional semiconductor with a convex structure on the surface, which affects the excitation voltage. The injection and transition of electrons can affect the luminescence of single-layer two-dimensional semiconductors. 8.如权利要求2所述的量子光源,其特征在于:所述导电电极的制备方法是通过光刻法形成模板后用镀膜机镀上一层金属。8 . The quantum light source according to claim 2 , wherein the conductive electrode is prepared by forming a template by photolithography and then coating a layer of metal with a coating machine. 9 . 9.如权利要求2所述的量子光源,其特征在于:所述连接导线,是指具有能将复合异质结构接入电子系统的功能的部分,并非必须有导线,只要复合异质结构能够接入电子系统即可。9 . The quantum light source according to claim 2 , wherein the connecting wire refers to a part having the function of connecting the composite heterostructure to the electronic system, and it is not necessary to have a wire, as long as the composite heterostructure can Access the electronic system. 10.如权利要求2所述的量子光源,其特征在于:所述电子系统,是指能够在所述单层二维半导体和所述表面具有凸起结构的三维半导体之间施加电压的电子系统。10 . The quantum light source according to claim 2 , wherein the electronic system refers to an electronic system capable of applying a voltage between the single-layer two-dimensional semiconductor and the three-dimensional semiconductor having a convex structure on the surface. 11 . .
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