CN111261676A - Organic light emitting display device - Google Patents

Organic light emitting display device Download PDF

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Publication number
CN111261676A
CN111261676A CN201911220577.2A CN201911220577A CN111261676A CN 111261676 A CN111261676 A CN 111261676A CN 201911220577 A CN201911220577 A CN 201911220577A CN 111261676 A CN111261676 A CN 111261676A
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China
Prior art keywords
layer
light emitting
conductive pattern
region
display device
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CN201911220577.2A
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Chinese (zh)
Inventor
崔允瑄
崔原硕
全相炫
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65OLEDs integrated with inorganic image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/70Testing, e.g. accelerated lifetime tests
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/17Passive-matrix OLED displays
    • H10K59/179Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40OLEDs integrated with touch screens
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Abstract

An organic light emitting display device includes a substrate, a light emitting structure, a first conductive pattern, and a functional module. The substrate has an opening region, a peripheral region surrounding the opening region, and a display region surrounding the peripheral region, and includes a first groove having an expanded lower portion formed in the peripheral region and an opening formed in the opening region. The light emitting structure is located in the display region and on the substrate. The first conductive pattern is in the peripheral region and overlaps the first groove on the substrate. The functional module is located in the opening of the substrate.

Description

Organic light emitting display device
Technical Field
Example embodiments relate generally to an organic light emitting display device.
Background
Flat panel display ("FPD") devices are widely used as display devices for electronic devices because FPD devices are lightweight and thin compared to cathode ray tube ("CRT") display devices. Typical examples of FPD devices are liquid crystal display ("LCD") devices and organic light emitting display ("OLED") devices.
Disclosure of Invention
Embodiments relate to an organic light emitting display device including a substrate, a light emitting structure, a first conductive pattern, and a functional module. The substrate has an opening region, a peripheral region surrounding the opening region, and a display region surrounding the peripheral region, and includes a first groove having an expanded lower portion formed in the peripheral region and an opening formed in the opening region. The light emitting structure is on the substrate in the display region. The first conductive pattern is in the peripheral region and overlaps the first groove on the substrate. The functional module is located in the opening of the substrate.
In example embodiments, the first conductive pattern may include a first sub conductive pattern and a second sub conductive pattern. The first sub conductive pattern may overlap the first groove and may have a planar shape of a circle including a partial opening of the opening portion. The second sub conductive pattern may extend in an outward direction from the opening portion of the first sub conductive pattern.
In example embodiments, the OLED device may further include a pad electrode and a signal wiring. The pad electrode may be located on the substrate, and may be electrically connected to an external device. The signal wiring positioned on the substrate may be disposed along an outer portion of the substrate, and may electrically connect the second sub conductive pattern and the pad electrode.
In an example embodiment, the first groove may surround the opening on the substrate.
In an example embodiment, the first groove may have a circular planar shape.
In example embodiments, the first conductive pattern positioned on the first groove may be disposed along a contour of an outer portion of the first groove.
In example embodiments, the substrate may include a first organic film layer, a first barrier layer, a second organic film layer, and a second barrier layer, and the first barrier layer may be on the first organic film layer. The second organic film layer may be on the first barrier layer and may have a trench in the peripheral region. The second barrier layer may be on the second organic film layer, and the second barrier layer positioned on the trench may have a protruding portion protruding in an inner portion of the trench. The second barrier layer may have an opening defined by a protruding portion.
In example embodiments, the first conductive pattern may overlap the protruding portion of the second barrier layer.
In an example embodiment, the protruding portion of the second barrier layer may include a first protruding portion and a second protruding portion. The first protruding portion may be positioned adjacent to the opening of the substrate. The second protruding portion may face the first protruding portion, and may be spaced apart from the first protruding portion in a direction from the opening region into the peripheral region.
In example embodiments, the OLED device may further include a second conductive pattern overlapping the first protrusion portion, the second conductive pattern being located on the first protrusion portion. The first conductive pattern may be overlapped on the second protrusion portion.
In example embodiments, the first conductive pattern and the second conductive pattern may be connected to each other in a region of the peripheral region, and may be integrally formed.
In example embodiments, the trench of the second organic film layer, the protruding portion of the second barrier layer, and the opening of the second barrier layer may be defined as a first recess of the substrate having an expanded lower portion.
In example embodiments, the light emitting structure may include: a lower electrode; a light emitting layer on the lower electrode; and an upper electrode on the light emitting layer.
In example embodiments, the light emitting layer may extend in a direction from the display region into the peripheral region on the substrate, and may be divided in a portion where the first groove is formed.
In example embodiments, the upper electrode may extend on the substrate in a direction from the display region into the peripheral region, and may be divided in a portion where the first groove is formed.
In example embodiments, the light emitting layer and the upper electrode may be located in at least a portion of the inner portion of the first groove.
In example embodiments, the OLED device may further include: the thin film packaging structure is positioned on the light-emitting structure; and a touch screen structure on the thin film encapsulation structure in the display area.
In example embodiments, the thin film encapsulation structure may include a first thin film encapsulation layer, a second thin film encapsulation layer, and a third thin film encapsulation layer. The first thin film encapsulation layer may be on the upper electrode, and may include an inorganic material having flexibility. The second thin film encapsulation layer may be on the first thin film encapsulation layer, and may include an organic material having flexibility. The third thin film encapsulation layer may be on the second thin film encapsulation layer, and may include an inorganic material having flexibility.
In example embodiments, each of the first and third thin film encapsulation layers may extend in a direction from the display area into the peripheral area on the upper electrode, and may be continuously disposed in a portion where the first groove is formed.
In an example embodiment, a touch screen structure may include: a first insulating layer on the third thin film encapsulation layer in the display region; the touch screen electrode is positioned on the first insulating layer; the second insulating layer is positioned on the touch screen electrode; the touch screen connecting electrode is positioned on the second insulating layer; and a protective insulating layer on the touch screen connection electrode.
In example embodiments, the first insulating layer may extend on the third thin film encapsulation layer in a direction from the display region into the peripheral region, and may be continuously disposed in the portion where the first groove is formed.
In example embodiments, the OLED device may further include: and an organic insulating pattern on the first insulating layer in the peripheral region.
In example embodiments, the second insulating layer may be in contact with an upper surface of the first insulating layer in the display region, and may be in contact with an upper surface of the organic insulating pattern in the peripheral region.
In example embodiments, the first conductive pattern may be positioned between the second insulating layer and the protective insulating layer.
In example embodiments, the functional module may be in contact with a side surface of the substrate, a side surface of the light emitting layer, a side surface of the upper electrode, a side surface of the first thin film encapsulation layer, a side surface of the third thin film encapsulation layer, a side surface of the first insulating layer, a side surface of the organic insulating pattern, a side surface of the second insulating layer, and a side surface of the protective insulating layer in a boundary of the peripheral region and the opening region.
In an example embodiment, the substrate may further include at least one second groove between the first groove and the functional module, the at least one second groove having an expanded lower portion. The first groove may surround the second groove.
In an example embodiment, the substrate may further include at least one third groove surrounding the first groove.
In example embodiments, the OLED device may further include a barrier structure in the peripheral region and on the substrate between the first groove and the third groove. The blocking structure may surround the first recess.
Drawings
Features will become apparent to those skilled in the art by describing in detail example embodiments with reference to the attached drawings, wherein:
FIG. 1 illustrates a perspective view of an organic light emitting display ("OLED") device according to an example embodiment;
FIG. 2 shows a plan view of the OLED device of FIG. 1;
FIGS. 3 and 4 illustrate perspective views for describing an opening formed in the OLED device of FIG. 1;
FIG. 5 shows a partially enlarged plan view corresponding to region "A" of FIG. 2;
fig. 6 illustrates a plan view for describing a conductive pattern included in the OLED device of fig. 5;
FIG. 7 shows a block diagram depicting an external device electrically connected to the OLED device of FIG. 6;
FIG. 8 shows a cross-sectional view taken along line I-I' of FIG. 5;
fig. 9 illustrates a plan view for describing a structure of a touch screen included in the OLED device of fig. 8;
fig. 10 to 20 show cross-sectional views of a method of manufacturing an OLED device according to example embodiments;
fig. 21 shows a plan view of an OLED device according to an example embodiment;
FIG. 22 shows a partially enlarged plan view corresponding to region "B" of FIG. 21;
FIG. 23 shows a partially enlarged plan view corresponding to region "B" of FIG. 21;
FIG. 24 shows a cross-sectional view taken along line II-II' of FIG. 22; and
fig. 25 shows a cross-sectional view of an OLED device according to an example embodiment.
Detailed Description
Example embodiments will now be described more fully hereinafter with reference to the accompanying drawings; example embodiments may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey example implementations to those skilled in the art. In the drawings, the size of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
Fig. 1 is a perspective view illustrating an organic light emitting display ("OLED") device according to an example embodiment, and fig. 2 is a plan view illustrating the OLED device of fig. 1. Fig. 3 and 4 are perspective views for describing an opening formed in the OLED device of fig. 1.
Referring to fig. 1, 2, 3 and 4, the OLED device 100 may include a functional module 700 and the like. The OLED device 100 may have a first surface S1 and a second surface S2. An image may be displayed in the first surface S1, and the second surface S2 may be opposite to the first surface S1. The functional module 700 may be located in one side of the OLED device 100.
As shown in fig. 2, the OLED device 100 may have a display region 10, an opening region 20, a peripheral region 30, and a pad region 40. The peripheral region 30 may substantially surround the open region 20 and the display region 10 may substantially surround the peripheral region 30. In another embodiment, the display area 10 may not completely surround the peripheral area 30. As shown in fig. 3 and 4, the OLED device 100 may have an opening 910 formed in the opening region 20. The pad area 40 may be located in one side of the display area 10. A plurality of pad electrodes may be located in the pad region 40, and the pad electrodes may be electrically connected to an external device. In example embodiments, the OLED device 100 may have a bent region between the display region 10 and the pad region 40. For example, the bent region may be bent along an axis with respect to a first direction D1 parallel to the upper surface of the OLED device 100, and the pad region 40 may be located on the lower surface of the OLED device 100.
The display region 10 may include a plurality of sub-pixel regions, which may be arranged in a matrix form in the display region 10 as a whole. A sub-pixel circuit (e.g., the semiconductor element 250 of fig. 8) may be located in each sub-pixel region of the display region 10, and an OLED (e.g., the light emitting structure 200 of fig. 8) may be located on the sub-pixel circuit. An image may be displayed in the display region 10 by the sub-pixel circuit and the OLED.
For example, the first, second, and third sub-pixel circuits may be located in the sub-pixel region, and the first, second, and third OLEDs may be located on the first, second, and third sub-pixel circuits. The first sub-pixel circuit may be coupled to (or connected to) a first OLED capable of emitting red light, and the second sub-pixel circuit may be coupled to a second OLED capable of emitting green light. The third sub-pixel circuit may be coupled to a third OLED capable of emitting blue light.
In example embodiments, the first OLED may overlap the first sub-pixel circuit, and the second OLED may overlap the second sub-pixel circuit. The third OLED may overlap the third sub-pixel circuit. In another embodiment, the first OLED may overlap a portion of the first sub-pixel circuit and a portion of a sub-pixel circuit different from the first sub-pixel circuit, and the second OLED may overlap a portion of the second sub-pixel circuit and a portion of a sub-pixel circuit different from the second sub-pixel circuit. The third OLED may overlap with a portion of the third sub-pixel circuit and a portion of a sub-pixel circuit different from the third sub-pixel circuit.
Accordingly, the first, second, and third OLEDs may be arranged using an RGB stripe method in which quadrangles of the same size are sequentially arranged, an s stripe method in which quadrangles of the same size are sequentially arranged, a WRGB method including a blue OLED having a relatively large area, a pen-tile method in which sub-pixels are repeatedly arranged in an RG-GB pattern, and the like, and the WRGB method further including a white OLED.
In addition, at least one driving transistor, at least one switching transistor, and at least one capacitor may be located in each sub-pixel region.
In an example embodiment, the shape of the display area 10 may be a planar shape of a quadrangle, for example. In the embodiment, the shape of the display area 10 may have a triangular planar shape, a rhombic planar shape, a polygonal planar shape, a circular planar shape, a racetrack planar shape, an elliptical planar shape, or the like.
The functional module 700 may be located in the opening 910. For example, the function module 700 may include a camera module for capturing (or recognizing) an image of an object, a face recognition sensor module for sensing a face of a user, a pupil recognition sensor module for sensing a pupil of a user, an acceleration and geomagnetic sensor module for determining movement of the OLED device 100, a proximity and infrared sensor module for detecting a proximity to the OLED device 100, and a light intensity sensor module for measuring a degree of brightness when put in a pocket or bag (bag), etc. In an example embodiment, a vibration or tactile module for indicating an incoming alarm, a speaker module for outputting a sound, etc. may be located in the opening 910.
In the exemplary embodiment, for example, the shapes of the opening region 20 and the peripheral region 30 each have a circular planar shape. In an embodiment, the shapes of the opening region 20 and the peripheral region 30 may each have a triangular planar shape, a rhombic planar shape, a polygonal planar shape, a quadrangular planar shape, a racetrack planar shape, an elliptical planar shape, or the like.
Fig. 5 is a partially enlarged plan view corresponding to a region "a" of fig. 2, and fig. 6 is a plan view for describing a conductive pattern included in the OLED device of fig. 5. Fig. 7 is a block diagram for describing an external device electrically connected to the OLED device of fig. 6.
Referring to fig. 5, 6 and 7, the OLED device 100 may include a conductive pattern 400, a functional module 700, a pad electrode 470, a connection wiring 370, and the like.
In an example embodiment, the opening 910 may be formed in the opening region 20, and the groove 930 may be formed in the peripheral region 30. The groove 930 may have a circular planar shape in a plan view of the OLED device 100 and may surround the open region 20. In addition, in a cross-sectional view of the OLED device 100, the groove 930 may have an expanded (or flared) lower portion. Accordingly, the lower portion of the groove 930 may be relatively larger than the upper portion of the groove 930.
The functional module 700 may be located in the opening 910, and the conductive pattern 400 may overlap the groove 930. Accordingly, the conductive pattern 400 may be disposed on the groove 930 along the contour of the outer portion (outer portion) of the groove 930. The conductive pattern 400 may substantially surround the functional module 700 (or the opening 910). As shown in fig. 6, the conductive pattern 400 may include a first sub conductive pattern 401 and a second sub conductive pattern 402. The first sub-conductive pattern 401 may have a planar shape of a circle including a partial opening of the opening portion, and the second sub-conductive pattern 402 may extend in an outward direction (e.g., a direction from the opening region 20 into the peripheral region 30 or a second direction D2 perpendicular to the first direction D1) from the opening portion of the first sub-conductive pattern 401. In example embodiments, the first sub conductive pattern 401 and the second sub conductive pattern 402 may be integrally formed at the same layer. In another embodiment, the first sub conductive pattern 401 may be positioned on the second sub conductive pattern 402, and the opening portion of the first sub conductive pattern 401 may be connected to the distal end of the second sub conductive pattern 402 through a contact hole. In an embodiment, the second sub conductive pattern 402 may be positioned on the first sub conductive pattern 401, and the opening portion of the first sub conductive pattern 401 may be connected to a distal end of the second sub conductive pattern 402 through a contact hole. The first sub conductive pattern 401 may overlap the groove 930. For example, the first sub conductive pattern 401 may overlap with the outermost portion of the groove 930. Accordingly, the first sub conductive pattern 401 may overlap with the outer boundary of the groove 930. In another embodiment, the first sub conductive pattern 401 may overlap with an innermost portion of the groove 930. Accordingly, the first sub conductive pattern 401 may overlap with the inner boundary of the groove 930.
The conductive pattern 400 may include a metal, an alloy of metals, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. For example, the conductive pattern 400 may include gold (Au), silver (Ag), aluminum (Al), tungsten (W), copper (Cu), platinum (Pt), nickel (Ni), titanium (Ti), palladium (Pd), magnesium (Mg), calcium (Ca), lithium (Li), chromium (Cr), tantalum (Ta), molybdenum (Mo), scandium (Sc), neodymium (Nd), iridium (Ir), an alloy of aluminum, aluminum nitride (AlN), an alloy of silver, tungsten nitride (WN), an alloy of copper, an alloy of molybdenum, titanium nitride (TiN), chromium nitride (CrN), tantalum nitride (TaN), ruthenium oxide Strontium (SRO), zinc oxide (ZnO), Indium TiN Oxide (ITO), TiN oxide (SnO), indium oxide (InO), indium oxide (GaO), zinc oxide (IZO), and the like. These may be used alone or in a suitable combination thereof. In example embodiments, the conductive pattern 400 may have a multi-layer structure including a plurality of layers.
The pad electrode 470 may be located in the pad region 40. The pad electrode 470 may include a first pad electrode 471 and a second pad electrode 472. For example, the first pad electrode 471 may be positioned in the left side of the pad area 40, and the second pad electrode 472 may be positioned in the right side of the pad area 40. In example embodiments, an additional pad electrode may also be positioned between the first pad electrode 471 and the second pad electrode 472. The pad electrode 470 may include a metal, an alloy of metals, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. These may be used alone or in a suitable combination thereof. In an example embodiment, the pad electrode 470 may have a multi-layer structure including a plurality of layers.
The connection wiring 370 may be positioned in the outer portions of the display region 10 and the pad region 40. The connection wiring 370 may include a first connection wiring 371 and a second connection wiring 372. The first distal end of the first connection wiring 371 may be connected to the second sub conductive pattern 402 located in the left side of the second sub conductive pattern 402, and the first connection wiring 371 may extend along the outline of the outer portions of the display region 10 and the pad region 40 in the counterclockwise direction. A second distal end of the first connection wiring 371, which is opposite to the first distal end, may be connected to the first pad electrode 471 in the pad region 40. Similarly, the first distal end of the second connection wiring 372 may be connected to the second sub conductive pattern 402 located in the right side of the second sub conductive pattern 402, and the second connection wiring 372 may extend along the outline of the outer portions of the display region 10 and the pad region 40 in the clockwise direction. A second distal end of the second connection wiring 372 opposite to the first distal end may be connected to the second pad electrode 472 in the pad region 40. Accordingly, the connection wiring 370 may electrically connect the conductive pattern 400 and the pad electrode 470. The connection wiring 370 may include a metal, an alloy of a metal, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. These may be used alone or in a suitable combination thereof. In an example embodiment, the connection wiring 370 may have a multi-layer structure including a plurality of layers.
As shown in fig. 7, the external device 101 may be electrically connected to the OLED device 100 through a flexible printed circuit board ("FPCB"). For example, one side of the FPCB may be in direct contact with the pad electrode 470, and the other side of the FPCB may be in direct contact with the external device 101. Accordingly, the external device 101 may electrically connect the first pad electrode 471 and the second pad electrode 472, and may measure a resistance value between the first pad electrode 471 and the second pad electrode 472.
A typical OLED device may include a substrate in which a recess having an expanded lower portion may be formed. The substrate may have a stack structure in which a first organic film layer, a first barrier layer, a second organic film layer, and a second barrier layer are sequentially stacked. When the groove is formed in the substrate, the light emitting layer and the upper electrode may be separated (or cut, etc.) in the peripheral region. For example, the groove having the expanded lower portion may have an undercut shape, and the second organic film layer and the second barrier layer may be formed in the peripheral region. The second organic film layer may have a trench of a second width, and the second barrier layer may have an opening of a first width overlapping the trench. The first width may be less than the second width. In addition, the protruding portion of the second barrier layer located adjacent to the opening may be defined as a tip (tip, also referred to as a tip), and the light emitting layer and the upper electrode may be separated in the peripheral region by the tip. However, the tip may be easily damaged by external impact or stress in a manufacturing process (e.g., removing the top and/or bottom protective films, etc.). When the tip is damaged, the light emitting layer and the upper electrode cannot be separated in the peripheral region, and moisture and/or water may permeate through the light emitting layer and the upper electrode. Accordingly, defects of pixels included in the conventional OLED device may occur due to moisture and/or water. Accordingly, since the damage of the tip may cause a defect of the general OLED device, such damage to the tip should be inspected in the manufacturing process of the general OLED device. However, damage to the tip cannot be directly visually observed.
In an example embodiment, the OLED device 100 includes the conductive pattern 400, the pad electrode 470, and the connection wiring 370, and the OLED device 100 may check whether the tip is damaged. For example, the OLED device 100 may measure a resistance value between the first pad electrode 471 and the second pad electrode 472 by using the external device 101. Accordingly, the OLED device 100 can check whether the tip is damaged by using the resistance value. Here, when the damage of the tip is generated, the resistance value may be increased or the tip may be in an open state due to the cut of the conductive pattern 400. Accordingly, the defect rate of the OLED device 100 may be reduced by the OLED device 100 checking whether the tip is damaged.
In an example embodiment, the external device 101 may generate a data signal, a gate signal, a light emitting signal, a gate initialization signal, an initialization voltage, a power supply, and the like. As described above, an additional pad electrode may also be located between the first pad electrode 471 and the second pad electrode 472, and the external device 101 may be electrically connected to the additional pad electrode. In this case, the external device 101 may provide a data signal, a gate signal, a light emitting signal, a gate initialization signal, an initialization voltage, a power supply, and the like to the OLED device 100. In addition, a driving integrated circuit may be mounted in the FPCB. In another embodiment, the driving integrated circuit may be mounted in a portion of the OLED device 100 positioned adjacent to the pad electrode 470.
Fig. 8 is a sectional view taken along line I-I' of fig. 5, and fig. 9 is a plan view for describing a structure of a touch screen included in the OLED device of fig. 8.
Referring to fig. 8 and 9, the OLED device 100 may include a substrate 110, a semiconductor element 250, a planarization layer 270, a light emitting structure 200, a pixel defining layer 310, a thin film encapsulation ("TFE") structure 450, a touch screen structure 380, an organic insulation pattern 490, a conductive pattern 400, a functional module 700, and the like. The substrate 110 may include a first organic film layer 111, a first barrier layer 112, a second organic film layer 113, and a second barrier layer 114. In the OLED device 100 having the display region 10, the opening region 20, the peripheral region 30, and the pad region 40, the substrate 110 may be divided into the display region 10, the opening region 20, the peripheral region 30, and the pad region 40. In addition, the semiconductor element 250 may include an active layer 130, a gate insulating layer 150, a gate electrode 170, an insulating interlayer 190, a source electrode 210, and a drain electrode 230, and the light emitting structure 200 may include a lower electrode 290, a light emitting layer 330, and an upper electrode 340. In addition, the TFE structure 450 may include a first TFE layer 451, a second TFE layer 452, and a third TFE layer 453, and the touch screen structure 380 may include a first insulating layer 390, a plurality of first touch screen electrodes 382, a plurality of second touch screen electrodes 384, a plurality of touch screen connection electrodes 386, a second insulating layer 395, and a protective insulating layer 410.
In example embodiments, the substrate 110 may further include a groove 930 formed in the peripheral region 30, and each of the light emitting layer 330 and the upper electrode 340 may be divided in an inner portion (or inside) of the groove 930. Accordingly, each of the light emitting layer 330 and the upper electrode 340 may be divided in the inner portion (inner portion) of the groove 930. In the OLED device 100 having the light emitting layer 330 and the upper electrode 340 separated in the inner portion of the groove 930, the OLED device 100 may block moisture, water, etc. from penetrating into the semiconductor element 250 and the light emitting structure 200. In addition, the substrate 110 may have an opening 910 formed in the opening region 20, and the functional module 700 may be located in the opening 910 (refer to fig. 20).
The first organic film layer 111 may be disposed. The first organic film layer 111 may include an organic material having flexibility. For example, the first organic film layer 111 may include a random copolymer or a block copolymer. In addition, the first organic film layer 111 may have high transparency, a low thermal expansion coefficient, and a high glass transition temperature. In the case where the first organic film layer 111 includes imide radicals, heat resistance, chemical resistance, abrasion resistance, and electrical characteristics may be excellent. In example embodiments, the first organic film layer 111 may include polyimide.
The first barrier layer 112 may be located on the entire first organic film layer 111. The first barrier layer 112 may block water and/or moisture penetrating through the first organic film layer 111. The first barrier layer 112 may include an inorganic material having flexibility. In example embodiments, the first barrier layer 112 may include silicon oxide, silicon nitride, or the like. For example, the first barrier layer 112 may include silicon oxide (SiO)x) Silicon nitride (SiN)x) Silicon oxynitride (SiO)xNy) Silicon oxycarbide (SiO)xCy) Silicon carbonitride (SiC)xNy) Aluminum oxide (AlO)x) Aluminum nitride (AlN)x) Tantalum oxide (TaO)x) Hafnium oxide (HfO)x) Zirconium oxide (ZrO)x) Titanium oxide (TiO)x) And the like.
The second organic film layer 113 may be located on the entire first barrier layer 112. In example embodiments, the second organic film layer 113 may have a trench in the peripheral region 30. Accordingly, a portion of the second organic film layer 113 positioned in the peripheral region 30 may be partially removed. The width of the groove may be defined as a second width W2 (refer to fig. 13). In another embodiment, a portion of the second organic film layer 113 positioned in the peripheral region 30 may be completely removed, so that the second organic film layer 113 may have an opening in the peripheral region 30. In this case, the upper surface of the first barrier layer 112 may be exposed through the opening.
The second organic film layer 113 may include an organic material having flexibility. For example, the second organic film layer 113 may include a random copolymer or a block copolymer. In example embodiments, the second organic film layer 113 may include polyimide.
The second barrier layer 114 may be located on the entire second organic film layer 113. In an example embodiment, the second barrier layer 114 may have an opening in the peripheral region 30. Accordingly, the second barrier layer 114 may have a first protrusion 116 and a second protrusion 117 protruding in the interior of the trench (or a tip protruding in the interior of the trench) on the trench, and may have an opening defined by the first protrusion 116 and the second protrusion 117. For example, the first tab portion 116 may be positioned adjacent to a boundary of the peripheral region 30 and the open region 20 (e.g., the opening 910 of the substrate 110). The second protruding portion 117 may face the first protruding portion 116, and may be spaced apart from the first protruding portion 116. The width of the opening of the second barrier layer 114 may have a first width W1 (refer to fig. 13) smaller than the second width W2. In addition, a space positioned under each of the first and second protrusions 116 and 117 may be defined as a first space 118 and a second space 119 (refer to fig. 14). The trench of the second organic film layer 113, the first and second protruding portions 116 and 117 of the second barrier layer 114, and the opening of the second barrier layer 114 may be defined as a groove 930, the groove 930 having an expanded lower portion, the groove 930 being formed in the OLED device 100 and positioned in the peripheral region 30. For example, the groove 930 having the expanded lower portion may have an undercut shape. The grooves 930 may serve as a barrier pattern capable of blocking water and/or moisture penetrating from the opening region 20 into the display region 10. In example embodiments, a plurality of grooves may be formed between the groove 930 and the functional module 700, and between the light emitting structure 200 positioned adjacent to the boundary of the display region 10 and the peripheral region 30 and the groove 930.
The second barrier layer 114 may block water and/or moisture penetrating through the second organic film layer 113. The second barrier layer 114 may include an inorganic material having flexibility. In example embodiments, the second barrier layer 114 may include SiOx、SiNxAnd the like.
Accordingly, the substrate 110 including the first organic film layer 111, the first barrier layer 112, the second organic film layer 113, and the second barrier layer 114 may be disposed.
In an example embodiment, the substrate 110 includes four layers, but the substrate 110 may include a single layer or at least two layers, for example.
In example embodiments, the substrate 110 may include a transparent or opaque material. For example, the substrate 110 may include a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, a fluoride-doped quartz substrate, a soda-lime glass substrate, an alkali-free glass substrate, and the like.
The buffer layer may be on the substrate 110 (e.g., the second barrier layer 114). For example, the buffer layer may be located on the entire substrate 110 except for the peripheral region 30. In another embodiment, the buffer layer may be on the substrate 110 in the peripheral region 30. In this case, the buffer layer may have an opening overlapping with the opening of the second barrier layer 114. The buffer layer may help prevent diffusion of metal atoms and/or impurities from the substrate 110 into the semiconductor element 250 and the light emitting structure 200. In addition, the buffer layer may control a heat transfer rate in a crystallization process for forming the active layer 130, thereby obtaining a substantially uniform active layer 130. In addition, when the surface of the substrate 110 is relatively irregular, the buffer layer may improve the surface flatness of the substrate 110. At least two buffer layers may be disposed on the substrate 110, or no buffer layer may be disposed, depending on the type of the substrate 110. For example, the buffer layer may include an organic material or an inorganic material.
The active layer 130 may be positioned on the substrate 110 in the display region 10. The active layer 130 may include an oxide semiconductor, an inorganic semiconductor (e.g., amorphous silicon, polycrystalline silicon, etc.), an organic semiconductor, and the like. The active layer 130 may have a source region and a drain region.
The gate insulating layer 150 may be on the active layer 130. The gate insulating layer 150 may cover the active layer 130 in the display region 10 and on the substrate 110, and may not be in the peripheral region 30. Accordingly, the gate insulating layer 150 may be located only in the display region 10 on the substrate 110. For example, the gate insulating layer 150 may substantially cover the active layer 130 on the substrate 110, and may have a substantially flat upper surface without a step around the active layer 130. In another embodiment, the gate insulating layer 150 may cover the active layer 130 on the substrate 110, and may be disposed at a substantially uniform thickness along the contour of the active layer 130. The gate insulating layer 150 may include a silicon compound, a metal oxide, and the like. In example embodiments, the gate insulating layer 150 may have a multi-layered structure including a plurality of insulating layers. For example, the insulating layers may have different thicknesses from each other or include different materials from each other.
The gate electrode 170 may be positioned on the gate insulating layer 150 in the display region 10. The gate electrode 170 may be positioned on a portion of the gate insulating layer 150 under which the active layer 130 is positioned. Gate electrode 170 can include metals, metal alloys, metal nitrides, conductive metal oxides, transparent conductive materials, and the like. These may be used alone or in a suitable combination thereof. In another embodiment, gate electrode 170 may have a multi-layer structure including a plurality of layers.
An insulating interlayer 190 may be positioned on the gate electrode 170. The insulating interlayer 190 may cover the gate electrode 170 in the display region 10 and on the gate insulating layer 150, and may not be in the peripheral region 30. Accordingly, the insulating interlayer 190 may be located only in the display region 10 on the gate insulating layer 150. For example, the insulating interlayer 190 may sufficiently cover the gate electrode 170 on the gate insulating layer 150, and may have a substantially flat upper surface without a step around the gate electrode 170. In another embodiment, the insulating interlayer 190 may cover the gate electrode 170 on the gate insulating layer 150 and may be disposed at a substantially uniform thickness along the profile of the gate electrode 170. The insulating interlayer 190 may include a silicon compound, a metal oxide, and the like. In example embodiments, the insulating interlayer 190 may have a multi-layer structure including a plurality of insulating layers. The insulating layers may have different thicknesses from each other or include different materials from each other.
The source electrode 210 and the drain electrode 230 may be positioned on the insulating interlayer 190 in the display region 10. The source electrode 210 may be connected to the source region of the active layer 130 via a contact hole formed by removing the gate insulating layer 150 and the first portion of the insulating interlayer 190. The drain electrode 230 may be connected to the drain region of the active layer 130 via a contact hole formed by removing the second portions of the gate insulating layer 150 and the insulating interlayer 190. Each of the source electrode 210 and the drain electrode 230 may include a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. These may be used alone or in a suitable combination thereof. In example embodiments, each of the source electrode 210 and the drain electrode 230 may have a multi-layer structure including a plurality of layers. Accordingly, a semiconductor element 250 including the active layer 130, the gate insulating layer 150, the gate electrode 170, the insulating interlayer 190, the source electrode 210, and the drain electrode 230 may be provided.
In an example embodiment, the semiconductor element 250 may have a top gate structure, for example. In another embodiment, the semiconductor element 250 may have a bottom gate structure, a double gate structure, or the like.
In addition, for example, the OLED device 100 may include one semiconductor element. In another embodiment, the OLED device 100 may include at least one semiconductor element and at least one capacitor.
The planarization layer 270 may be on the insulating interlayer 190, the source electrode 210, and the drain electrode 230. The planarization layer 270 may cover the source and drain electrodes 210 and 230 in the display region 10 and on the insulating interlayer 190, and may not be in the peripheral region 30. Accordingly, the planarization layer 270 may be located only in the display region 10 on the insulating interlayer 190. For example, the planarization layer 270 may be disposed in the display region 10 at a relatively high thickness. In this case, the planarization layer 270 may have a substantially flat upper surface, and a planarization process may be further performed on the planarization layer 270 to achieve the flat upper surface of the planarization layer 270. In another embodiment, the planarization layer 270 may be disposed in the display region 10 at a substantially uniform thickness along the profile of the source and drain electrodes 210 and 230 on the insulating interlayer 190. The planarization layer 270 may include an organic material or an inorganic material. In an example embodiment, the planarization layer 270 may include an organic material.
The lower electrode 290 may be positioned on the planarization layer 270 in the display region 10. The lower electrode 290 may be connected to the drain electrode 230 via a contact hole formed by removing a portion of the planarization layer 270. In addition, the lower electrode 290 may be electrically connected to the semiconductor element 250. The lower electrode 290 may include a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. These may be used alone or in a suitable combination thereof. In an example embodiment, the lower electrode 290 may have a multi-layer structure including a plurality of layers.
The pixel defining layer 310 may be located on the planarization layer 270 in the display region 10 and may not be in the peripheral region 30. Therefore, the pixel defining layer 310 may be located only in the display area 10. For example, the pixel defining layer 310 may cover both lateral portions of the lower electrode 290 and may expose a portion of the upper surface of the lower electrode 290. The pixel defining layer 310 may include an organic material or an inorganic material. In an example embodiment, the pixel defining layer 310 may include an organic material.
The light emitting layer 330 may be positioned on the pixel defining layer 310 and the lower electrode 290 in the display region 10 and may extend in the first direction D1, and may be positioned on the substrate 110 in the peripheral region 30. In example embodiments, the light emitting layer 330 may be partially in the inner portion of the groove 930, and the light emitting layer 330 in the portion in which the groove 930 is positioned may be separated in a depth direction (e.g., a direction from the second barrier layer 114 into the first organic film layer 111). Therefore, the light emitting layer 330 can be divided in the peripheral area 30. Accordingly, the light emitting layer 330 may be separated by the first space 118 and the second space 119 in the peripheral area 30.
For example, when the groove 930 does not have the first and second protruding portions 116 and 117, the light emitting layer 330 may be continuously disposed in a portion where the groove 930 is formed, and the light emitting layer 330 may serve as a permeation path of water and/or moisture. Accordingly, a portion of the light emitting layer 330 (e.g., a lateral distal end of the light emitting layer 330) may be exposed in the open region 20, and water and/or moisture may permeate into the exposed portion of the light emitting layer 330. In this case, the semiconductor element 250 and the light emitting structure 200 positioned adjacent to the peripheral region 30 in the display region 10 may be damaged by water and/or moisture. Meanwhile, according to an example embodiment, the OLED device 100 includes a groove 930 having an expanded lower portion. Accordingly, the light emitting layer 330 may be divided in the inner portion of the groove 930 so that the permeation path of the light emitting layer 330 may be blocked. Therefore, when the light emitting layer 330 is in the peripheral region 30, defects of pixels included in the OLED device 100 do not occur.
The light emitting layer 330 may have a multi-layer structure including an organic light emitting layer ("EML"), a hole injection layer ("HIL"), a hole transport layer ("HTL"), an electron transport layer ("ETL"), an electron injection layer ("EIL"), and the like. In an example embodiment, the EML, HIL, HTL, ETL, and EIL may be located in the peripheral region 30. In an example embodiment, the HIL, HTL, ETL, and EIL other than the EML may be located in the peripheral area 30.
The EML of the light emitting layer 330 may be formed using at least one of light emitting materials capable of generating different colors of light (e.g., red light, blue light, green light, etc.) according to the sub-pixels. In another embodiment, the EML of the light emitting layer 330 may generally generate white light by stacking a plurality of light emitting materials capable of generating different colors of light (such as red light, green light, blue light, etc.). In this case, the color filter may be positioned on the light emitting layer 330 positioned on the lower electrode 290. The color filter may include at least one selected from a red color filter, a green color filter, and a blue color filter. In another embodiment, the color filter may include a yellow color filter, a cyan color filter, and a magenta color filter. The color filter may include a photosensitive resin, a color photoresist, and the like.
The upper electrode 340 may be positioned on the light emitting layer 330. The upper electrode 340 may overlap the light emitting layer 330 in the display region 10 and may extend in the first direction D1, and may be positioned on the light emitting layer 330 in the peripheral region 30. In example embodiments, the upper electrode 340 may be partially in the inner portion of the groove 930, and the upper electrode 340 in the portion where the groove 930 is located may be separated in the depth direction. Therefore, the upper electrode 340 may be divided in the peripheral region 30. Accordingly, the upper electrode 340 may be separated by the first space 118 and the second space 119 in the peripheral region 30.
For example, when the groove 930 does not have the first and second protruding portions 116 and 117, the upper electrode 340 may be continuously disposed in a portion where the groove 930 is formed, and the upper electrode 340 may serve as a permeation path of water and/or moisture. Accordingly, a portion of the upper electrode 340 (e.g., a lateral distal end of the upper electrode 340) may be exposed in the open region 20, and water and/or moisture may permeate into the exposed portion of the upper electrode 340. In this case, the semiconductor element 250 and the light emitting structure 200 positioned adjacent to the peripheral region 30 in the display region 10 may be damaged by water and/or moisture. Meanwhile, according to example embodiments, the OLED device 100 may include a groove 930 having an expanded lower portion. Accordingly, the upper electrode 340 may be divided in the inner portion of the groove 930. Accordingly, when the upper electrode 340 is divided in the inner portion of the groove 930, the permeation path of the upper electrode 340 may be blocked. Therefore, when the upper electrode 340 is in the peripheral region 30, defects of pixels included in the OLED device 100 do not occur.
The upper electrode 340 may include a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. These may be used alone or in a suitable combination thereof. In example embodiments, the upper electrode 340 may have a multi-layer structure including a plurality of layers.
Accordingly, the light emitting structure 200 including the lower electrode 290, the light emitting layer 330, and the upper electrode 340 may be provided.
A capping layer may be positioned on the upper electrode 340. The cover layer may overlap the upper electrode 340 in the display area 10 and may extend in the first direction D1, and may be positioned on the upper electrode 340 in the peripheral area 30. In an example embodiment, the cover layer may be partially in the inner portion of the groove 930, and the cover layer in the portion where the groove 930 is located may be separated in the depth direction. Thus, the cover layer can be separated in the peripheral area 30. Thus, the cover layer may be separated in the peripheral region 30 by a first space 118 and a second space 119.
For example, when the groove 930 does not have the first and second protruding portions 116 and 117, a cover layer may be continuously provided in a portion where the groove 930 is formed, and the cover layer may serve as a permeation path of water and/or moisture. Thus, a portion of the cover layer (e.g., the lateral distal end of the cover layer) may be exposed in the open area 20, and water and/or moisture may permeate into the exposed portion of the cover layer. In this case, the semiconductor element 250 and the light emitting structure 200 positioned adjacent to the peripheral region 30 in the display region 10 may be damaged by water and/or moisture. Meanwhile, according to an example embodiment, the OLED device 100 includes a groove 930 having an expanded lower portion. Thus, the cover layer may be divided in the inner portion of the groove 930. Accordingly, when the cover layer is separated in the inner portion of the groove 930, the permeation path of the cover layer may be blocked. Therefore, when the capping layer is in the peripheral area 30, defects of pixels included in the OLED device 100 do not occur.
The capping layer may protect the light emitting structure 200, and may include an organic material or an inorganic material. In example embodiments, the capping layer may include an organic material, such as a triamine derivative, an arylene diamine derivative, 4 '-N, N' -dicarbazole-biphenyl ("CBP"), tris (8-hydroxyquinoline) aluminum ("Alq"), and a metal oxide, such as aluminum oxide, or a metal oxide3") and the like.
The first TFE layer 451 may be positioned on the upper electrode 340 in the display area 10 and the peripheral area 30. The first TFE layer 451 may cover the upper electrode 340 in the display region 10, may be disposed at a substantially uniform thickness along the outline of the upper electrode 340, and may extend in the peripheral region 30. The first TFE layer 451 may be disposed along the contour of the upper electrode 340 in the peripheral region 30. Accordingly, the first TFE layer 451 may be continuously disposed in a portion where the groove 930 is formed. In an example embodiment, the first TFE layer 451 may completely cover the recess 930. Accordingly, the first TFE layer 451 may cover the first and second protruding portions 116 and 117, and may completely cover the light emitting layer 330 and the upper electrode 340 disposed inside the groove 930 in the first and second spaces 118 and 119. Accordingly, the first TFE layer 451 may be in direct contact with the second organic film layer 113 in the first space 118 and the second space 119. The first TFE layer 451 may help prevent the light emitting structure 200 from being deteriorated due to penetration of moisture, water, oxygen, or the like. In addition, the first TFE layer 451 may protect the light emitting structure 200 from an external impact. The first TFE layer 451 may include an inorganic material having flexibility.
The second TFE layer 452 may be positioned on the first TFE layer 451 in the display region 10, and may not be in the peripheral region 30. Accordingly, the second TFE layer 452 may be only in the display region 10. In another embodiment, the second TFE layer 452 may be in a portion of the peripheral region 30. The second TFE layer 452 may improve the flatness of the OLED device 100 and may protect the light emitting structure 200. The second TFE layer 452 may include an organic material having flexibility.
The third TFE layer 453 may be positioned on the second TFE layer 452 in the display region 10 and on the first TFE layer 451 in the peripheral region 30. The third TFE layer 453 may cover the second TFE layer 452 in the display region 10, and may be disposed at a substantially uniform thickness along the outline of the second TFE layer 452 and may extend in the outer peripheral region 30. The third TFE layer 453 can be disposed at a substantially uniform thickness along the contour of the first TFE layer 451 in the peripheral region 30. Accordingly, the third TFE layer 453 may be continuously formed in a portion where the groove 930 is formed. The third TFE layer 453, together with the first TFE layer 451, may help prevent the light emitting structure 200 from being deteriorated due to penetration of moisture, water, oxygen, and the like. In addition, the third TFE layer 453, together with the first TFE layer 451 and the second TFE layer 452, may protect the light emitting structure 200 from an external impact. The third TFE layer 453 may include an inorganic material having flexibility.
Thus, a TFE structure 450 including a first TFE layer 451, a second TFE layer 452, and a third TFE layer 453 can be provided. In another embodiment, the TFE structure 450 may have a five-layer structure stacked with first to fifth TFE layers or a seven-layer structure stacked with first to seventh TFE layers.
The first insulating layer 390 may be positioned on the third TFE layer 453 in the display region 10 and the peripheral region 30. The first insulating layer 390 may cover the third TFE layer 453 in the display region 10, and may be disposed at a substantially uniform thickness along the outline of the third TFE layer 453 and may extend in the peripheral region 30. The first insulating layer 390 may be disposed at a substantially uniform thickness along the contour of the third TFE layer 453 in the peripheral region 30. Accordingly, the first insulating layer 390 may be continuously disposed in a portion where the first insulating layer 390 is formed. The first insulating layer 390 may include an organic material or an inorganic material. In another embodiment, the first insulating layer 390 may have a multi-layer structure including a plurality of insulating layers. For example, the insulating layers may have different thicknesses from each other or include different materials from each other.
The organic insulation pattern 490 may be positioned on the first insulation layer 390 in the peripheral region 30. In example embodiments, the organic insulation pattern 490 may be only in the peripheral region 30. In another embodiment, the organic insulation pattern 490 may be in a portion of the display region 10. The organic insulating pattern 490 may be disposed on the first insulating layer 390 at a relatively high thickness in the peripheral region 30. In this case, the organic insulation pattern 490 may have a substantially flat upper surface, and a planarization process may be further performed on the organic insulation pattern 490 to achieve the flat upper surface of the organic insulation pattern 490. In another embodiment, the organic insulating pattern 490 may be disposed on the first insulating layer 390 at a substantially uniform thickness along the contour of the first insulating layer 390 in the display region 10. In example embodiments, the organic insulation pattern 490 may include an organic material such as a photoresist, a polyacrylic resin, a polyimide-based resin, a polyamide-based resin, a siloxane-based resin, an acrylic resin, an epoxy-based resin, or the like.
The first and second touch screen electrodes 382 and 384 may be positioned on the first insulating layer 390 in the display area 10. As shown in fig. 9, each of the first touch screen electrodes 382 may extend in a first direction D1 and may be spaced apart from each other along a second direction D2. The second touch screen electrodes 384 may be spaced apart from each other along the first direction D1 between adjacent two of the first touch screen electrodes 382. For example, each of the first and second touch screen electrodes 382 and 384 may include a Carbon Nanotube (CNT), a transparent conductive oxide such as ITO, Indium Gallium Zinc Oxide (IGZO), ZnO, graphene, an Ag nanowire (AgNW), Cu, Cr, or the like.
The second insulating layer 395 may be positioned on the first and second touch screen electrodes 382 and 384 in the display area 10. The second insulating layer 395 may cover the first and second touch screen electrodes 382 and 384 in the display area 10, and may be disposed at a substantially uniform thickness along the outline of the first and second touch screen electrodes 382 and 384 and may extend in the peripheral area 30. The second insulating layer 395 may be disposed along the contour of the organic insulating pattern 490 in the peripheral region 30. Accordingly, the second insulating layer 395 may be in contact with the upper surface of the first insulating layer 390 in the display region 10 and may be in contact with the upper surface of the organic insulating pattern 490 in the peripheral region 30. The second insulating layer 395 may include an organic material or an inorganic material. In another embodiment, the second insulating layer 395 may have a multi-layered structure including a plurality of insulating layers. The insulating layers may have different thicknesses from each other or include different materials from each other.
The touch screen connection electrode 386 may be positioned on the second insulating layer 395 in the display area 10. As shown in fig. 9, the touch screen connection electrode 386 may electrically connect two second touch screen electrodes 384 adjacent in the second direction D2 among the second touch screen electrodes 384 through contact holes. For example, the touch screen connection electrode 386 and the first and second touch screen electrodes 382 and 384 may have the same material. In another embodiment, the touch screen connection electrode 386 may include a metal, an alloy of metals, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. These may be used alone or in a suitable combination thereof.
The conductive pattern 400 may be on the second insulating layer 395 in the peripheral region 30. In an example embodiment, in order to detect the damage of the second protruding portion 117 (or the first protruding portion 116), the conductive pattern 400 may overlap the second protruding portion 117 of the groove 930. In another embodiment, the conductive pattern 400 may overlap the first protruding portion 116.
For example, the conductive pattern 400 on the groove 930 may be disposed along the contour of the second protrusion 117 of the groove 930. The conductive pattern 400 may substantially surround the functional module 700 (or the opening 910). The conductive pattern 400 may include a first sub conductive pattern 401 and a second sub conductive pattern 402 (refer to fig. 6). The first sub-conductive pattern 401 may have a planar shape of a circle including a partial opening of the opening portion, and the second sub-conductive pattern 402 may extend from the opening portion of the first sub-conductive pattern 401 in the second direction D2. In example embodiments, the first sub conductive pattern 401 and the second sub conductive pattern 402 may be integrally formed at the same layer.
In another embodiment, the first sub conductive pattern 401 may be positioned on the second sub conductive pattern 402, and the opening portion of the first sub conductive pattern 401 may be connected to the distal end of the second sub conductive pattern 402 through a contact hole. In another embodiment, the second sub conductive pattern 402 may be positioned on the first sub conductive pattern 401, and the opening portion of the first sub conductive pattern 401 may be connected to the distal end of the second sub conductive pattern 402 through a contact hole.
The first sub conductive pattern 401 may overlap the groove 930. For example, the first sub conductive pattern 401 may overlap with the outermost portion of the groove 930. Accordingly, the first sub conductive pattern 401 may overlap with the outer boundary of the groove. In another embodiment, the first sub conductive pattern 401 may overlap with an innermost portion of the groove 930. Accordingly, the first sub conductive pattern 401 may overlap with the inner boundary of the groove 930.
The conductive pattern 400 and the touch screen connection electrode 386 may be simultaneously formed using the same material. In another embodiment, the conductive pattern 400 and the first and second touch screen electrodes 382 and 384 may be simultaneously formed using the same material.
The protective insulating layer 410 may be positioned on the second insulating layer 395, the touch screen connection electrode 386, and the conductive pattern 400 in the display area 10 and the peripheral area 30. The protective insulating layer 410 may be disposed on the second insulating layer 395 with a relatively high thickness. In this case, the protective insulating layer 410 may have a substantially flat upper surface. In another embodiment, the protective insulating layer 410 may cover the touch screen connection electrode 386 and the conductive pattern 400 in the display area 10 and the peripheral area 30 and on the second insulating layer 395, and may be disposed at a substantially uniform thickness along the outline of the touch screen connection electrode 386 and the conductive pattern 400. The protective insulating layer 410 may include an organic material or an inorganic material. In example embodiments, the protective insulating layer 410 may include an organic material.
As described above, the touch screen structure 380 including the first insulating layer 390, the first touch screen electrode 382, the second touch screen electrode 384, the second insulating layer 395, the touch screen connection electrode 386, and the protective insulating layer 410 may be arranged.
The functional module 700 may be located in the open region 20. In example embodiments, the functional module 700 may contact a side surface of the substrate 110, a side surface of the light emitting layer 330, a side surface of the upper electrode 340, a side surface of the first TFE layer 451, a side surface of the third TFE layer 453, a side surface of the first insulating layer 390, a side surface of the organic insulating pattern 490, a side surface of the second insulating layer 395, and a side surface of the protective insulating layer 410 in a boundary of the peripheral region 30 and the opening region 20.
For example, the function modules 700 may include a camera module, a face recognition sensor module, a pupil recognition sensor module, an acceleration and geomagnetic sensor module, a proximity and infrared sensor module, a light intensity sensor module, and the like. In an example embodiment, a vibration or tactile module for indicating an incoming alarm, a speaker module for outputting a sound, etc. may be located in the opening 910.
The OLED device 100 according to an example embodiment includes a conductive pattern 400, a pad electrode 470, and a connection wiring 370. Accordingly, the OLED device 100 may check whether the second protruding portion 117 is damaged. Accordingly, it is possible to reduce the defect rate of the OLED device 100 by the OLED device 100 checking whether the second protruding portion 117 is damaged.
Fig. 10 to 20 are cross-sectional views illustrating a method of manufacturing an OLED device according to example embodiments.
Referring to fig. 10, a rigid glass substrate 105 may be provided. A first organic film layer 111 may be formed on the rigid glass substrate 105. The first organic film layer 111 may be formed on the entire rigid glass substrate 105, and may be formed using an organic material having flexibility (such as polyimide).
The first barrier layer 112 may be formed on the entire first organic film layer 111. The first barrier layer 112 may block water and/or moisture penetrating through the first organic film layer 111. The first barrier layer 112 may be formed using an inorganic material having flexibility, such as silicon oxide, silicon nitride, or the like. For example, the first barrier layer 112 may comprise SiOx、SiNx、SiOxNy、SiOxCy、SiCxNy、AlOx、AlNx、TaOx、HfOx、ZrOx、TiOxAnd the like.
A second organic film layer 113 may be formed on the first barrier layer 112. The second organic film layer 113 may be formed on the entire first barrier layer 112, and may be formed using an organic material having flexibility (such as polyimide).
The second barrier layer 114 may be formed on the entire second organic film layer 113. The second barrier layer 114 may block water and/or moisture penetrating through the second organic film layer 113. The second barrier layer 114 may be formed using an inorganic material having flexibility (such as SiO)x、SiNxEtc.).
Accordingly, the substrate 110 including the first organic film layer 111, the first barrier layer 112, the second organic film layer 113, and the second barrier layer 114 may be formed.
The substrate 110 may be relatively thin and flexible. Thus, the substrate 110 may be formed on a rigid glass substrate 105 to help support the formation of the upper structures (e.g., semiconductor elements, light emitting structures, etc.). For example, after forming the upper structure on the substrate 110, the rigid glass substrate 105 may be removed. Since the first and second organic film layers 111 and 113 and the first and second barrier layers 112 and 114 are relatively thin and flexible, it may not be easy to directly form an upper structure on the first and second organic film layers 111 and 113 and the first and second barrier layers 112 and 114. Accordingly, a superstructure may be formed on the substrate 110 and the rigid glass substrate 105, and then the first and second organic film layers 111 and 113 and the first and second barrier layers 112 and 114 may be used as the substrate 110 after removing the rigid glass substrate 105.
A buffer layer may be formed on the substrate 110. The buffer layer may be formed on the entire substrate 110. The buffer layer may help prevent diffusion of metal atoms and/or impurities from the substrate 110. In addition, the buffer layer may control a heat transfer rate in a crystallization process for forming the active layer, thereby obtaining a substantially uniform active layer. In addition, when the surface of the substrate 110 is relatively irregular, the buffer layer may improve the surface flatness of the substrate 110. At least two buffer layers may be disposed on the substrate 110 or the buffer layers may not be formed, depending on the type of the substrate 110. For example, the buffer layer may be formed using an organic material or an inorganic material.
Referring to fig. 11, an active layer 130 may be formed in the display region 10 and on the substrate 110. The active layer 130 may be formed using an oxide semiconductor, an inorganic semiconductor, an organic semiconductor, or the like. The active layer 130 may have a source region and a drain region.
A gate insulating layer 150 may be formed on the active layer 130. The gate insulating layer 150 may cover the active layer 130 in the display region 10 on the substrate 110, and may extend from the display region 10 into the opening region 20 in the first direction D1. Accordingly, the gate insulating layer 150 may be formed on the entire substrate 110. For example, the gate insulating layer 150 may substantially cover the active layer 130 on the substrate 110, and may have a substantially flat upper surface without a step around the active layer 130. In another embodiment, the gate insulating layer 150 may cover the active layer 130 on the substrate 110, and may be formed in a substantially uniform thickness along the contour of the active layer 130. The gate insulating layer 150 may be formed using a silicon compound, a metal oxide, or the like. In another embodiment, the gate insulating layer 150 may have a multi-layer structure including a plurality of insulating layers. For example, the insulating layers may have different thicknesses from each other or include different materials from each other.
A gate electrode 170 may be formed in the display region 10 and on the gate insulating layer 150. The gate electrode 170 may be formed on a portion of the gate insulating layer 150 under which the active layer 130 is positioned. The gate electrode 170 may be formed using a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. These may be used alone or in a suitable combination thereof. In another embodiment, gate electrode 170 may have a multi-layer structure including a plurality of layers.
An insulating interlayer 190 may be formed on the gate electrode 170. The insulating interlayer 190 may cover the gate electrode 170 in the display region 10 and on the gate insulating layer 150, and may extend in the first direction D1. Accordingly, the insulating interlayer 190 may be formed on the entire gate insulating layer 150. For example, the insulating interlayer 190 may sufficiently cover the gate electrode 170 on the gate insulating layer 150, and may have a substantially flat upper surface without a step around the gate electrode 170. In another embodiment, the insulating interlayer 190 may cover the gate electrode 170 on the gate insulating layer 150, and may be formed with a substantially uniform thickness along the profile of the gate electrode 170. The insulating interlayer 190 may be formed using a silicon compound, a metal oxide, or the like. In example embodiments, the insulating interlayer 190 may have a multi-layer structure including a plurality of insulating layers. The insulating layers may have different thicknesses from each other or include different materials from each other.
Referring to fig. 12, a source electrode 210 and a drain electrode 230 may be formed in the display region 10 and on the insulating interlayer 190. The source electrode 210 may be connected to the source region of the active layer 130 via a contact hole formed by removing the gate insulating layer 150 and the first portion of the insulating interlayer 190. The drain electrode 230 may be connected to the drain region of the active layer 130 via a contact hole formed by removing the second portions of the gate insulating layer 150 and the insulating interlayer 190. Each of the source electrode 210 and the drain electrode 230 may include a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, and the like. These may be used alone or in a suitable combination thereof. In example embodiments, each of the source electrode 210 and the drain electrode 230 may have a multi-layer structure including a plurality of layers. Accordingly, a semiconductor element 250 including the active layer 130, the gate insulating layer 150, the gate electrode 170, the insulating interlayer 190, the source electrode 210, and the drain electrode 230 may be formed.
A planarization layer 270 may be formed on the insulating interlayer 190, the source electrode 210, and the drain electrode 230. The planarization layer 270 may cover the source and drain electrodes 210 and 230 in the display region 10 and on the insulating interlayer 190, and may not be formed in the peripheral region 30. Accordingly, the planarization layer 270 may be formed only in the display region 10 and on the insulating interlayer 190. For example, the planarization layer 270 may be formed in a relatively high thickness in the display region 10. In this case, the planarization layer 270 may have a substantially flat upper surface, and a planarization process may be further performed on the planarization layer 270 to achieve the flat upper surface of the planarization layer 270. In another embodiment, the planarization layer 270 may be formed in a substantially uniform thickness along the profile of the source and drain electrodes 210 and 230 in the display region 10 and on the insulating interlayer 190. The planarization layer 270 may be formed using an organic material.
A lower electrode 290 may be formed in the display region 10 and on the planarization layer 270. The lower electrode 290 may be connected to the drain electrode 230 via a contact hole formed by removing a portion of the planarization layer 270. In addition, the lower electrode 290 may be electrically connected to the semiconductor element 250. The lower electrode 290 may be formed using a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. These may be used alone or in a suitable combination thereof. In an example embodiment, the lower electrode 290 may have a multi-layer structure including a plurality of layers.
Referring to fig. 13, after the lower electrode 290 is formed, the gate insulating layer 150 and the insulating interlayer 190 positioned in the peripheral region 30 may be removed. After removing the gate insulating layer 150 and the insulating interlayer 190 positioned in the peripheral region 30, a groove 930 having an expanded lower portion may be formed in the substrate 110 positioned in the peripheral region 30 through a laser or dry etching process. The groove 930 may have an undercut shape. For example, a trench having the second width W2 formed in the second organic film layer 113 and an opening having the first width W1 smaller than the second width W2 formed in the second barrier layer 114 may be defined as an undercut shape. In another embodiment, the opening having the second width W2 formed in the second organic film layer 113 and the opening having the first width W1 smaller than the second width W2 formed in the second barrier layer 114 may be defined as an undercut shape. In this case, the upper surface of the first barrier layer 112 may be exposed through the opening of the second organic film layer 113.
The first protrusion portion 116 and the second protrusion portion 117 protruding in the inner portion of the trench on the trench of the second organic film layer 113 may be defined by the opening of the second barrier layer 114. For example, the first protruding part 116 may be positioned adjacent to a boundary of the peripheral region 30 and the opening region 20. The second protruding portion 117 may face the first protruding portion 116, and may be spaced apart from the first protruding portion 116. In addition, a space positioned under each of the first and second protruding portions 116 and 117 may be defined as a first space 118 and a second space 119 (refer to fig. 14). Accordingly, the trench of the second organic film layer 113, the first and second protruding portions 116 and 117 of the second barrier layer 114, and the opening of the second barrier layer 114 may be defined as a groove 930 formed in the substrate 110 positioned in the peripheral region 30, the groove 930 having an expanded lower portion. In example embodiments, the plurality of grooves may be formed to be spaced apart from the groove 930 in the first direction D1, and may be formed to be spaced apart from the groove 930 in a direction opposite to the first direction D1.
Referring to fig. 14, the pixel defining layer 310 may be formed in the display region 10 and on the planarization layer 270, and the pixel defining layer 310 may not be formed in the peripheral region 30. Accordingly, the pixel defining layer 310 may be formed only in the display region 10. For example, the pixel defining layer 310 may cover both lateral portions of the lower electrode 290 and may expose a portion of the upper surface of the lower electrode 290. The pixel defining layer 310 may be formed using an organic material.
The light emitting layer 330 may be formed on the lower electrode 290 and the pixel defining layer 310 in the display region 10 and may extend in the first direction D1, and may be formed in the peripheral region 30. In example embodiments, the light emitting layer 330 may be partially formed in the inner portion of the groove 930, and the light emitting layer 330 located in the portion where the groove 930 is located may be separated in the depth direction. Therefore, the light emitting layer 330 can be divided in the peripheral area 30. Accordingly, the light emitting layer 330 may be separated by the first space 118 and the second space 119 in the peripheral area 30.
The light emitting layer 330 may have a multi-layer structure including EML, HIL, HTL, ETL, EIL, and the like. In an example embodiment, the EML, HIL, HTL, ETL, and EIL may be formed in the peripheral region 30. In an example embodiment, the HIL, the HTL, the ETL, and the EIL other than the EML may be formed in the peripheral region 30.
The EML of the light emitting layer 330 may be formed using at least one of light emitting materials capable of generating different colors of light (e.g., red light, blue light, green light, etc.) according to the sub-pixels. In another embodiment, the EML of the light emitting layer 330 may generally generate white light by stacking a plurality of light emitting materials capable of generating different colors of light (such as red light, green light, blue light, etc.). In this case, a color filter may be formed on the light emitting layer 330 formed on the lower electrode 290. The color filter may include at least one selected from a red color filter, a green color filter, and a blue color filter. In another embodiment, the color filter may include a yellow color filter, a cyan color filter, and a magenta color filter. The color filter may be formed using a photosensitive resin, a color photoresist, or the like.
An upper electrode 340 may be formed on the light emitting layer 330. The upper electrode 340 may be formed to overlap the light emitting layer 330 in the display region 10 and may extend in the first direction D1, and may be formed on the light emitting layer 330 in the peripheral region 30. In example embodiments, the upper electrode 340 may be partially formed in the inner portion of the groove 930, and the upper electrode 340 located in the portion where the groove 930 is located may be separated in the depth direction. Therefore, the upper electrode 340 may be divided in the peripheral region 30. Accordingly, the upper electrode 340 may be separated by the first space 118 and the second space 119 in the peripheral region 30.
The upper electrode 340 may be formed using a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. These may be used alone or in a suitable combination thereof. In example embodiments, the upper electrode 340 may have a multi-layer structure including a plurality of layers.
Accordingly, the light emitting structure 200 including the lower electrode 290, the light emitting layer 330, and the upper electrode 340 may be formed.
Referring to fig. 15, a capping layer may be formed on the upper electrode 340. The cover layer may be formed to overlap the upper electrode 340 in the display area 10 and may extend in the first direction D1, and may be formed on the upper electrode 340 in the peripheral area 30. In example embodiments, the cover layer may be partially formed in the inner portion of the groove 930, and the cover layer located in the portion where the groove 930 is located may be formed in the depth directionAnd (4) separating. Thus, the cover layer can be separated in the peripheral area 30. Thus, the cover layer may be separated in the peripheral region 30 by a first space 118 and a second space 119. The cover layer may protect the light emitting structure 200, and may use, for example, triamine derivatives, arylene diamine derivatives, CBP, Alq3Etc. of organic materials.
The first TFE layer 451 may be formed in the display region 10 and the peripheral region 30 and on the upper electrode 340. The first TFE layer 451 may cover the upper electrode 340 in the display region 10, may be formed in a substantially uniform thickness along the outline of the upper electrode 340, and may extend in the peripheral region 30. The first TFE layer 451 may be formed along the contour of the upper electrode 340 in the peripheral region 30. Accordingly, the first TFE layer 451 may be continuously formed in a portion where the groove 930 is formed. In an example embodiment, the first TFE layer 451 may completely cover the recess 930. Accordingly, the first TFE layer 451 may cover the first and second protruding portions 116 and 117, and may be formed in the first and second spaces 118 and 119 and may completely cover the light emitting layer 330 and the upper electrode 340 formed inside the groove 930. Accordingly, the first TFE layer 451 may be in direct contact with the second organic film layer 113 in the first space 118 and the second space 119. The first TFE layer 451 may help prevent the light emitting structure 200 from being deteriorated due to penetration of moisture, water, oxygen, or the like. In addition, the first TFE layer 451 may protect the light emitting structure 200 from an external impact. The first TFE layer 451 may be formed using an inorganic material having flexibility.
The second TFE layer 452 may be formed on the first TFE layer 451 in the display region 10, and may not be formed in the peripheral region 30. Accordingly, the second TFE layer 452 may be formed only in the display region 10. The second TFE layer 452 may improve the flatness of the OLED device 100 and may protect the light emitting structure 200. The second TFE layer 452 may be formed using an organic material having flexibility.
Referring to fig. 16, a third TFE layer 453 may be formed on the second TFE layer 452 in the display region 10 and on the first TFE layer 451 in the peripheral region 30. The third TFE layer 453 may cover the second TFE layer 452 in the display region 10, and may be formed in a substantially uniform thickness along the outline of the second TFE layer 452, and may extend in the peripheral region 30. The third TFE layer 453 can be formed in a substantially uniform thickness along the contour of the first TFE layer 451 in the peripheral region 30. Accordingly, the third TFE layer 453 may be continuously formed in a portion where the groove 930 is formed. The third TFE layer 453, together with the first TFE layer 451, may help prevent the light emitting structure 200 from being deteriorated due to penetration of moisture, water, oxygen, and the like. In addition, the third TFE layer 453, together with the first TFE layer 451 and the second TFE layer 452, may protect the light emitting structure 200 from an external impact. The third TFE layer 453 may be formed using an inorganic material having flexibility.
Thus, a TFE structure 450 including a first TFE layer 451, a second TFE layer 452, and a third TFE layer 453 can be formed. In another embodiment, the TFE structure 450 may have a five-layer structure in which first to fifth TFE layers are stacked or a seven-layer structure in which first to seventh TFE layers are stacked.
A first insulating layer 390 may be formed in the display region 10 and the peripheral region 30 and on the third TFE layer 453. The first insulating layer 390 may cover the third TFE layer 453 in the display region 10, and may be disposed at a substantially uniform thickness along the outline of the third TFE layer 453 and may extend in the peripheral region 30. The first insulating layer 390 may be formed in a substantially uniform thickness along the contour of the third TFE layer 453 in the peripheral region 30. Accordingly, the first insulating layer 390 may be continuously formed in a portion where the first insulating layer 390 is formed. The first insulating layer 390 may be formed using an organic material or an inorganic material. In another embodiment, the first insulating layer 390 may have a multi-layer structure including a plurality of insulating layers. For example, the insulating layers may have different thicknesses from each other or include different materials from each other.
Referring to fig. 17, an organic insulating pattern 490 may be formed in the peripheral region 30 and on the first insulating layer 390. In example embodiments, the organic insulation pattern 490 may be formed only in the peripheral region 30. The organic insulation pattern 490 may be formed on the first insulation layer 390 at a relatively high thickness in the peripheral region 30. In this case, the organic insulation pattern 490 may have a substantially flat upper surface, and a planarization process may be further performed on the organic insulation pattern 490 to achieve the flat upper surface of the organic insulation pattern 490. In another embodiment, the organic insulating pattern 490 may be formed on the first insulating layer 390 with a substantially uniform thickness along the contour of the first insulating layer 390 in the display region 10. The organic insulating pattern 490 may be formed using an organic material such as a photoresist, a polyacrylate resin, a polyimide-based resin, a polyamide-based resin, a siloxane-based resin, an acrylic resin, an epoxy-based resin, or the like.
Referring to fig. 18, a first touch screen electrode 382 and a second touch screen electrode 384 (refer to fig. 9) may be formed in the display region 10 and on the first insulating layer 390. Each of the first touch screen electrodes 382 may extend in a first direction D1 and may be spaced apart from each other along a second direction D2. The second touch screen electrodes 384 may be spaced apart from each other along the first direction D1 between adjacent two of the first touch screen electrodes 382. For example, each of the first and second touch screen electrodes 382 and 384 may be formed using a Carbon Nanotube (CNT), a transparent conductive oxide such as ITO, Indium Gallium Zinc Oxide (IGZO), ZnO, graphene, an Ag nanowire (AgNW), Cu, Cr, or the like.
A second insulating layer 395 may be formed in the display area 10 and on the first and second touch screen electrodes 382 and 384. The second insulating layer 395 may cover the first and second touch screen electrodes 382 and 384 in the display area 10, and may be formed in a substantially uniform thickness along the outline of the first and second touch screen electrodes 382 and 384 and may extend in the peripheral area 30. The second insulating layer 395 may be formed along the contour of the organic insulating pattern 490 in the peripheral region 30. Accordingly, the second insulating layer 395 may be in contact with the upper surface of the first insulating layer 390 in the display region 10 and may be in contact with the upper surface of the organic insulating pattern 490 in the peripheral region 30. The second insulating layer 395 may be formed using an organic material or an inorganic material. In another embodiment, the second insulating layer 395 may have a multi-layered structure including a plurality of insulating layers. The insulating layers may have different thicknesses from each other or include different materials from each other.
Referring to fig. 19, a touch screen connection electrode 386 (refer to fig. 9) may be formed in the display region 10 and on the second insulating layer 395. The touch screen connection electrode 386 may electrically connect two second touch screen electrodes 384 adjacent in the second direction D2 among the second touch screen electrodes 384 through contact holes. For example, the same material may be used to form the touch screen connection electrode 386 and the first and second touch screen electrodes 382 and 384. In another embodiment, the touch screen connection electrode 386 may be formed using a metal, an alloy of metals, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. These may be used alone or in a suitable combination thereof.
The conductive pattern 400 may be formed in the peripheral region 30 and on the second insulating layer 395. In example embodiments, in order to detect the damage of the second protruding portion 117, the conductive pattern 400 may be formed to overlap the second protruding portion 117 of the groove 930. In another embodiment, the conductive pattern 400 may be formed to overlap the first protrusion 116 of the groove 930.
For example, the conductive pattern 400 on the groove 930 may be formed along the contour of the second protrusion 117 of the groove 930. The conductive pattern 400 may substantially surround the open region 20. The conductive pattern 400 may include a first sub conductive pattern 401 and a second sub conductive pattern 402 (refer to fig. 6). The first sub-conductive pattern 401 may have a planar shape of a circle including a partial opening of the opening portion, and the second sub-conductive pattern 402 may extend from the opening portion of the first sub-conductive pattern 401 in the second direction D2. In example embodiments, the first sub conductive pattern 401 and the second sub conductive pattern 402 may be integrally formed at the same layer.
In another embodiment, the first sub conductive pattern 401 may be formed on the second sub conductive pattern 402, and the opening portion of the first sub conductive pattern 401 may be connected to the distal end of the second sub conductive pattern 402 through a contact hole. Alternatively, the second sub conductive pattern 402 may be formed on the first sub conductive pattern 401, and the opening portion of the first sub conductive pattern 401 may be connected to the distal end of the second sub conductive pattern 402 through a contact hole.
The first sub conductive pattern 401 may be formed to overlap the groove 930. For example, the first sub conductive pattern 401 may be formed to overlap the second protrusion portion 117 of the groove 930. In another embodiment, the first sub-conductive pattern 401 may overlap the first protrusion portion 116 of the groove 930.
The conductive pattern 400 and the touch screen connection electrode 386 may be simultaneously formed using the same material. In another embodiment, the conductive pattern 400 and the first and second touch screen electrodes 382 and 384 may be simultaneously formed using the same material.
The protective insulating layer 410 may be formed in the display area 10 and the peripheral area 30 and on the second insulating layer 395, the touch screen connection electrode 386, and the conductive pattern 400. The protective insulating layer 410 may be formed on the second insulating layer 395 with a relatively high thickness. In this case, the protective insulating layer 410 may have a substantially flat upper surface. In another embodiment, the protective insulating layer 410 may cover the touch screen connection electrode 386 and the conductive pattern 400 in the display area 10 and the peripheral area 30 and on the second insulating layer 395, and may be formed in a substantially uniform thickness along the outline of the touch screen connection electrode 386 and the conductive pattern 400. The protective insulating layer 410 may be formed using an organic material.
As described above, the touch screen structure 380 including the first insulating layer 390, the first touch screen electrode 382, the second touch screen electrode 384, the second insulating layer 395, the touch screen connection electrode 386, and the protective insulating layer 410 may be formed.
After the touch screen structure 380 is formed, laser light may be irradiated in the open region 20 and on the protective insulating layer 410. In another embodiment, a different etching process may be performed to expose the open region 20 on the protective insulating layer 410.
Referring to fig. 20 and 8, an opening 910 may be formed in the opening region 20 by laser irradiation, and a functional module 700 may be formed in the opening 910. In example embodiments, the functional module 700 may contact a side surface of the substrate 110, a side surface of the light emitting layer 330, a side surface of the upper electrode 340, a side surface of the first TFE layer 451, a side surface of the third TFE layer 453, a side surface of the first insulating layer 390, a side surface of the organic insulating pattern 490, a side surface of the second insulating layer 395, and a side surface of the protective insulating layer 410 in a boundary of the peripheral region 30 and the opening region 20. For example, the function modules 700 may include a camera module, a face recognition sensor module, a pupil recognition sensor module, an acceleration and geomagnetic sensor module, a proximity and infrared sensor module, a light intensity sensor module, and the like. After forming the functional module 700, the rigid glass substrate 105 may be removed from the substrate 110. Accordingly, the OLED device 100 shown in fig. 8 may be manufactured.
Fig. 21 is a plan view illustrating an OLED device according to an example embodiment, and fig. 22 is a partially enlarged plan view corresponding to a region "B" of fig. 21. Fig. 23 is a partially enlarged plan view corresponding to region "B" of fig. 21, and fig. 24 is a sectional view taken along line II-II' of fig. 22. The OLED device 500 shown in fig. 21, 22, and 24 may have substantially the same or similar configuration as that of the OLED device 100 described with reference to fig. 1 to 9, except for the conductive pattern 1400. In fig. 21, 22, and 24, detailed descriptions of elements that are substantially the same as or similar to those described with reference to fig. 1 to 9 may not be repeated.
Referring to fig. 21, 22 and 24, the OLED device 500 may include a substrate 110, a semiconductor element 250, a planarization layer 270, a light emitting structure 200, a pixel defining layer 310, a TFE structure 450, a touch screen structure 380, an organic insulation pattern 490, a conductive pattern 1400, a functional module 700, and the like. The substrate 110 may include a first organic film layer 111, a first barrier layer 112, a second organic film layer 113, and a second barrier layer 114. Since the OLED device 500 has the display region 10, the opening region 20, the peripheral region 30, and the pad region 40, the substrate 110 may be divided into the display region 10, the opening region 20, the peripheral region 30, and the pad region 40. In addition, the touch screen structure 380 may include a first insulating layer 390, a plurality of first touch screen electrodes 382, a plurality of second touch screen electrodes 384, a plurality of touch screen connection electrodes 386, a second insulating layer 395, and a protective insulating layer 410.
The conductive pattern 1400 may be on the second insulating layer 395 in the peripheral region 30. In an example embodiment, in order to detect the damage of the first and second protruding portions 116 and 117, the conductive pattern 1400 may overlap the first and second protruding portions 116 and 117 of the groove 930.
For example, the conductive pattern 1400 on the groove 930 may be disposed along the contour of the first and second protruding portions 116 and 117 of the groove 930. As shown in fig. 22, the conductive pattern 1400 may include a first sub conductive pattern, a second sub conductive pattern, a third sub conductive pattern, and a fourth sub conductive pattern. The first sub conductive pattern may have a planar shape of a partially opened circle including a top opening portion and a bottom opening portion, and may overlap the second protrusion portion 117 of the groove 930. The second sub conductive pattern may have a planar shape of a partially opened circle including a bottom opened portion, and may overlap the first protrusion portion 116 of the groove 930. The third sub conductive pattern may extend from the top opening portion of the first sub conductive pattern in the second direction D2. The fourth sub conductive pattern may connect the bottom opening portion of the first sub conductive pattern and the bottom opening portion of the second sub conductive pattern. In example embodiments, the first sub conductive pattern, the second sub conductive pattern, the third sub conductive pattern, and the fourth sub conductive pattern may be integrally formed at the same layer.
In an example embodiment, as shown in fig. 23, the OLED device 500 may include a first conductive pattern 400 and a second conductive pattern 600. The first conductive pattern 400 on the groove 930 may be disposed along the contour of the second protrusion 117 of the groove 930, and the second conductive pattern 600 on the groove 930 may be disposed along the contour of the first protrusion 116 of the groove 930. Accordingly, the first conductive pattern 400 may substantially surround the second conductive pattern 600. The first conductive pattern 400 may include a first sub conductive pattern and a second sub conductive pattern. A portion of the first sub conductive pattern may have a planar shape of a circle including a partial opening of the opening portion, and the second sub conductive pattern may extend from the opening portion of the first sub conductive pattern in the second direction D2. In example embodiments, the first sub conductive pattern and the second sub conductive pattern may be integrally formed at the same layer. In addition, the second conductive pattern 600 may include a third sub conductive pattern and a fourth sub conductive pattern. A portion of the third sub conductive pattern may have a planar shape of a circle including a partial opening of the opening portion, and the fourth sub conductive pattern may extend from the opening portion of the third sub conductive pattern in the second direction D2. In example embodiments, the third sub conductive pattern and the fourth sub conductive pattern may be integrally formed at the same layer.
The OLED device 500 according to an example embodiment may include a conductive pattern 1400, a pad electrode 470, and a connection wiring 370. Accordingly, the OLED device 500 may check whether the first and second protruding portions 116 and 117 are damaged. Accordingly, it is possible to reduce the defect rate of the OLED device 500 by checking whether the first and second protruding portions 116 and 117 are damaged by the OLED device 500.
Fig. 25 is a cross-sectional view illustrating an OLED device according to an example embodiment. The OLED device 800 shown in fig. 25 may have substantially the same or similar configuration as that of the OLED device 500 described with reference to fig. 21 to 24, except for the second groove 950 and the third groove 970. In fig. 25, detailed descriptions of elements that are substantially the same as or similar to those described with reference to fig. 21 to 24 may not be repeated.
Referring to fig. 25, the OLED device 800 may include a substrate 110, a semiconductor element 250, a planarization layer 270, a light emitting structure 200, a pixel defining layer 310, a TFE structure 450, a touch screen structure 380, an organic insulation pattern 490, a conductive pattern 400, a functional module 700, a barrier structure 550, and the like. The substrate 110 may include a first organic film layer 111, a first barrier layer 112, a second organic film layer 113, and a second barrier layer 114. Since the OLED device 800 has the display region 10, the opening region 20, the peripheral region 30, and the pad region 40, the substrate 110 may be divided into the display region 10, the opening region 20, the peripheral region 30, and the pad region 40. In addition, the light emitting structure 200 may include a lower electrode 290, a light emitting layer 330, and an upper electrode 340, and the TFE structure 450 may include a first TFE layer 451, a second TFE layer 452, and a third TFE layer 453. In addition, the touch screen structure 380 may include a first insulating layer 390, a plurality of first touch screen electrodes 382, a plurality of second touch screen electrodes 384, a plurality of touch screen connection electrodes 386, a second insulating layer 395, and a protective insulating layer 410.
A first groove 930, a second groove 950, and a third groove 970 having expanded lower portions may be formed. For example, in the substrate 110, a first groove 930 may be formed in the peripheral region 30, and a second groove 950 may be formed between the first groove 930 and the functional module 700. The third groove 970 may be formed in the display area 10. In addition, the second groove 950 may surround the functional module 700, and the first groove 930 may surround the second groove 950. The third groove 970 may surround the first groove 930. In another embodiment, at least one groove having an expanded lower portion may be further formed between the second groove 950 and the functional module 700 and between the third groove 970 and the first groove 930.
The OLED device 800 according to an example embodiment may include first to third grooves 930, 950 and 970. Accordingly, the light emitting layer 330 and the upper electrode 340 may be easily separated due to a relatively large number of grooves having an expanded lower portion. In addition, since a relatively large number of grooves having the expanded lower portion are located in the peripheral region 30, when external impact or stress in the manufacturing process is transmitted to the substrate 110 in a direction from the opening region 20 into the display region 10, the amount of impact may be reduced by the relatively large number of grooves having the expanded lower portion. In addition, since a relatively large number of grooves having an expanded lower portion are located in the peripheral region 30, the contact area of the first TFE layer 451 and the substrate 110 may be relatively increased in the peripheral region 30. Accordingly, the OLED device 800 may help prevent the first TFE layer 451 from being separated from the substrate 110.
The barrier structure 550 may be located between the first recess 930 and the third recess 970 on the substrate 110 positioned in the peripheral region 30. In an example embodiment, the blocking structure 550 may block leakage of the second TFE layer 452. The barrier structure 550 may include an organic material or an inorganic material. In an example embodiment, the barrier structure 550 may include an organic material.
The light emitting layer 330 may be positioned on the pixel defining layer 310 and the lower electrode 290 in the display area 10 and may extend in the first direction D1, and may be positioned on the substrate 110 and the barrier structure 550 in the peripheral area 30. In example embodiments, the light emitting layer 330 may be partially located in the inner portion of each of the first to third grooves 930, 950 and 970, and the light emitting layer 330 in the portion where each of the first to third grooves 930, 950 and 970 is located may be separated in the depth direction. Accordingly, the light emitting layer 330 may be divided in the first to third grooves 930, 950 and 970. Accordingly, the light emitting layer 330 may be separated by the first space 118 and the second space 119 in the peripheral area 30.
The upper electrode 340 may be positioned on the light emitting layer 330. The upper electrode 340 may overlap the light emitting layer 330 in the display region 10 and may extend in the first direction D1, and may be positioned on the light emitting layer 330 in the peripheral region 30. In example embodiments, the upper electrode 340 may be partially located in an inner portion of each of the first to third grooves 930, 950 and 970, and the upper electrode 340 in a portion where each of the first to third grooves 930, 950 and 970 is located may be separated in a depth direction. Accordingly, the upper electrode 340 may be separated in each of the first to third grooves 930, 950 and 970.
The first TFE layer 451 may be positioned on the upper electrode 340 in the display area 10 and the peripheral area 30. The first TFE layer 451 may cover the upper electrode 340 in the display region 10, may be disposed at a substantially uniform thickness along the outline of the upper electrode 340, and may extend in the peripheral region 30. The first TFE layer 451 may be disposed along the contour of the upper electrode 340 in the peripheral region 30. Accordingly, the first TFE layer 451 may be continuously disposed in a portion where each of the first to third grooves 930, 950, and 970 is formed. In an example embodiment, the first TFE layer 451 may completely cover each of the first to third grooves 930, 950, and 970. Accordingly, the first TFE layer 451 may completely cover the light emitting layer 330 and the upper electrode 340 disposed inside each of the first to third recesses 930, 950, and 970. Accordingly, the first TFE layer 451 may be in direct contact with the second organic film layer 113 in the first space 118 and the second space 119.
The second TFE layer 452 may be positioned on the first TFE layer 451 in a portion of the peripheral region 30 and the display region 10. In example embodiments, the second TFE layer 452 may fill an inner portion of the third groove 970, and may not be disposed inside the first groove 930 and the second groove 950.
The third TFE layer 453 may be positioned on the second TFE layer 452 in the display region 10 and on the first TFE layer 451 in the peripheral region 30. The third TFE layer 453 may cover the second TFE layer 452 in the display region 10, and may be disposed at a substantially uniform thickness along the outline of the second TFE layer 452 and may extend in the peripheral region 30. The third TFE layer 453 can be disposed at a substantially uniform thickness along the contour of the first TFE layer 451 in the peripheral region 30. Accordingly, the third TFE layer 453 may be continuously formed in a portion where each of the second and third grooves 950 and 970 is formed.
The first insulating layer 390 may be positioned on the third TFE layer 453 in the display region 10 and the peripheral region 30. The first insulating layer 390 may cover the third TFE layer 453 in the display region 10, and may be disposed at a substantially uniform thickness along the outline of the third TFE layer 453 and may extend in the peripheral region 30. The first insulating layer 390 may be disposed at a substantially uniform thickness along the contour of the third TFE layer 453 in the peripheral region 30. Accordingly, the first insulating layer 390 may be continuously disposed in a portion where each of the second and third grooves 950 and 970 is formed.
The organic insulation pattern 490 may be positioned on the first insulation layer 390 in the peripheral region 30. The organic insulating pattern 490 may be disposed on the first insulating layer 390 at a relatively high thickness in a portion of the display region 10 and the peripheral region 30. In this case, the organic insulation pattern 490 may have a substantially flat upper surface.
The conductive pattern 1400 may be on the second insulating layer 395 in the peripheral region 30. In an example embodiment, in order to detect the damage of the first and second protruding portions 116 and 117, the conductive pattern 1400 may overlap the first and second protruding portions 116 and 117 of the first groove 930. For example, the conductive pattern 1400 on the first groove 930 may be disposed along the contour of each of the first and second protruding portions 116 and 117 of the first groove 930.
In an example embodiment, a conductive pattern may also be provided on the protruding portion of each of the second and third grooves 950 and 970.
Example embodiments may be applied to various display devices including an OLED device. For example, example embodiments may be applied to vehicle display devices, ship display devices, aircraft display devices, portable communication devices, display devices for display or for information transfer, medical display devices, and the like.
By way of summary and review, a display device such as an OLED device may have a display area displaying an image and a non-display area in which a gate driver, a data driver, wiring, and a functional module (e.g., a camera module, a motion recognition sensor, etc.) are disposed. A barrier pattern for blocking permeation of water, moisture, etc. into a portion of the display area adjacent to the functional module may be formed adjacent to the functional module. The barrier pattern may be susceptible to damage from external impact or stress in the manufacturing process, in which case defects of the display pixels may occur.
As described above, example embodiments relate to an organic light emitting display device that may include a functional module located in a portion of a display area. The OLED device according to example embodiments may include a conductive pattern, a pad electrode, and a connection wiring, and the OLED device may check whether the second protrusion portion is damaged. Accordingly, since the OLED device checks whether the second protrusion portion is damaged, a defect rate of the OLED device may be reduced.
Example embodiments have been disclosed herein and, although specific terms are employed, they are used and are to be interpreted in a generic and descriptive sense only and not for purposes of limitation. In some cases, it will be apparent to one of ordinary skill in the art from the time of filing this application that features, characteristics, and/or elements described with respect to a particular embodiment may be used alone or in combination with features, characteristics, and/or elements described with respect to other embodiments unless specifically stated otherwise. Accordingly, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the exemplary embodiments as set forth in the following claims.

Claims (28)

1. An organic light emitting display device, comprising:
a substrate having an opening region, a peripheral region surrounding the opening region, and a display region surrounding the peripheral region, the substrate including a first groove having an expanded lower portion formed in the peripheral region and an opening formed in the opening region;
a light emitting structure in the display region and on the substrate;
a first conductive pattern overlapping the first groove in the peripheral region and on the substrate; and
a functional module located in the opening of the substrate.
2. The organic light emitting display device according to claim 1, wherein the first conductive pattern comprises:
a first sub conductive pattern overlapping the first groove, the first sub conductive pattern having a planar shape of a partially opened circle including an opening portion; and
a second sub conductive pattern extending from the opening portion of the first sub conductive pattern in an outward direction.
3. The organic light emitting display device according to claim 2, further comprising:
a pad electrode on the substrate, the pad electrode being electrically connected to an external device; and
a signal wiring positioned on the substrate and disposed along an outer portion of the substrate, the signal wiring electrically connecting the second sub conductive pattern and the pad electrode.
4. An organic light-emitting display device according to claim 1, wherein the first groove surrounds the opening on the substrate.
5. The organic light emitting display device according to claim 4, wherein the first groove has a circular planar shape.
6. The organic light emitting display device according to claim 1, wherein the first conductive pattern positioned on the first groove is provided along an outline of an outer portion of the first groove.
7. The organic light emitting display device of claim 1, wherein the substrate comprises:
a first organic film layer;
the first barrier layer is positioned on the first organic film layer;
a second organic film layer on the first barrier layer, the second organic film layer having a trench in the peripheral region; and
a second barrier layer on the second organic film layer, the second barrier layer positioned on the trench and having a protruding portion protruding in an inner portion of the trench, the second barrier layer having an opening defined by the protruding portion.
8. The organic light emitting display device according to claim 7, wherein the first conductive pattern overlaps the protruding portion of the second barrier layer.
9. The organic light emitting display device according to claim 7, wherein the protruding portion of the second barrier layer comprises:
a first projection positioned adjacent to the opening of the substrate; and
a second protruding portion facing the first protruding portion, the second protruding portion being spaced apart from the first protruding portion in a direction from the opening area into the peripheral area.
10. The organic light emitting display device according to claim 9, further comprising:
a second conductive pattern on the first protruding portion and overlapping the first protruding portion,
wherein the first conductive pattern is superimposed on the second protruding portion.
11. The organic light emitting display device according to claim 10, wherein the first conductive pattern and the second conductive pattern are connected to each other in a region of the peripheral region and are integrally formed.
12. An organic light emitting display device according to claim 7, wherein the trench of the second organic film layer, the protruding portion of the second barrier layer, and the opening of the second barrier layer are defined as the first recess having the expanded lower portion.
13. The organic light emitting display device of claim 1, wherein the light emitting structure comprises:
a lower electrode;
a light emitting layer on the lower electrode; and
and an upper electrode on the light emitting layer.
14. An organic light-emitting display device according to claim 13, wherein the light-emitting layer extends on the substrate in a direction from the display region into the peripheral region, and is divided in a portion where the first groove is formed.
15. The organic light-emitting display device according to claim 13, wherein the upper electrode extends on the substrate in a direction from the display region into the peripheral region, and is divided in a portion where the first groove is formed.
16. An organic light-emitting display device according to claim 13, wherein the light-emitting layer and the upper electrode are located in at least a part of an inner portion of the first groove.
17. The organic light emitting display device according to claim 13, further comprising:
the thin film packaging structure is positioned on the light-emitting structure; and
a touch screen structure in the display area and on the thin film encapsulation structure.
18. The organic light emitting display device of claim 17, wherein the thin film encapsulation structure comprises:
a first thin film encapsulation layer on the upper electrode, the first thin film encapsulation layer including an inorganic material having flexibility;
a second thin film encapsulation layer on the first thin film encapsulation layer, the second thin film encapsulation layer including an organic material having flexibility; and
a third thin film encapsulation layer on the second thin film encapsulation layer, the third thin film encapsulation layer comprising an inorganic material having flexibility.
19. The organic light-emitting display device according to claim 18, wherein each of the first thin film encapsulation layer and the third thin film encapsulation layer extends on the upper electrode in a direction from the display region into the peripheral region, and is continuously located in a portion where the first groove is formed.
20. The organic light emitting display device of claim 18, wherein the touch screen structure comprises:
a first insulating layer in the display region and on the third thin film encapsulation layer;
a touch screen electrode on the first insulating layer;
the second insulating layer is positioned on the touch screen electrode;
the touch screen connecting electrode is positioned on the second insulating layer; and
and the protective insulating layer is positioned on the touch screen connecting electrode.
21. The organic light-emitting display device according to claim 20, wherein the first insulating layer extends on the third thin film encapsulation layer in a direction from the display region into the peripheral region, and is continuously located in a portion where the first groove is formed.
22. The organic light emitting display device of claim 20, further comprising: an organic insulating pattern in the peripheral region and on the first insulating layer.
23. The organic light emitting display device according to claim 22, wherein the second insulating layer is in contact with an upper surface of the first insulating layer in the display region and is in contact with an upper surface of the organic insulating pattern in the peripheral region.
24. The organic light emitting display device of claim 23, wherein the first conductive pattern is between the second insulating layer and the protective insulating layer.
25. The organic light emitting display device according to claim 22, wherein the functional module is in contact with a side surface of the substrate, a side surface of the light emitting layer, a side surface of the upper electrode, a side surface of the first thin film encapsulation layer, a side surface of the third thin film encapsulation layer, a side surface of the first insulating layer, a side surface of the organic insulating pattern, a side surface of the second insulating layer, and a side surface of the protective insulating layer in a boundary of the peripheral region and the opening region.
26. The organic light emitting display device according to claim 1,
the substrate further includes at least one second recess between the first recess and the functional module, the at least one second recess having an expanded lower portion, and
the first groove surrounds the at least one second groove.
27. An organic light-emitting display device according to claim 1 wherein the substrate further comprises at least one third recess surrounding the first recess.
28. An organic light-emitting display device according to claim 27, further comprising a barrier structure in the peripheral region and on the substrate between the first recess and the at least one third recess, the barrier structure surrounding the first recess.
CN201911220577.2A 2018-12-03 2019-12-03 Organic light emitting display device Pending CN111261676A (en)

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