CN111245369A - Push-push type voltage-controlled oscillator based on SIW differential filter - Google Patents

Push-push type voltage-controlled oscillator based on SIW differential filter Download PDF

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Publication number
CN111245369A
CN111245369A CN202010088696.3A CN202010088696A CN111245369A CN 111245369 A CN111245369 A CN 111245369A CN 202010088696 A CN202010088696 A CN 202010088696A CN 111245369 A CN111245369 A CN 111245369A
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siw
port
oscillator
differential filter
push
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CN111245369B (en
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康炜
李平宇
江涛
缪晨
陈春红
吴文
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Nanjing University of Science and Technology
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/02Details
    • H03B5/06Modifications of generator to ensure starting of oscillations
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator

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Abstract

The invention discloses a push-push type voltage-controlled oscillator based on a SIW differential filter, which comprises the SIW differential filter, a first varactor diode group, a second varactor diode group, a first sub-oscillator, a second sub-oscillator and a SIW power synthesizer, wherein the SIW differential filter is connected with the SIW differential filter through a first voltage-controlled oscillator; the first and second varactor banks are coupled within a SIW differential filter; a first port and a second port of the SIW differential filter are respectively connected with two ends of a first sub-oscillator, and a third port and a fourth port of the SIW differential filter are respectively connected with two ends of a second sub-oscillator; the first sub-oscillator and the second sub-oscillator are connected with the SIW power synthesizer; and the output port of the SIW power synthesizer is used as the output port of the push-push type voltage-controlled oscillator. The invention has the advantages of low power consumption, high fundamental wave suppression degree, low phase noise and high quality factor.

Description

Push-push type voltage-controlled oscillator based on SIW differential filter
Technical Field
The invention belongs to the technical field of oscillators, and particularly relates to a push-push type voltage-controlled oscillator based on a SIW differential filter.
Background
Microwave frequency sources have been an indispensable part of communication systems, providing stable frequency input for radar and wireless systems, and oscillators are the core of microwave frequency sources. With the rapid development of communication technology, the requirements on oscillators are higher and higher, and more types of oscillators are designed to meet various use conditions, of which a push-push type oscillator is one. The push-push type oscillator can effectively expand the working frequency of the oscillator, the output frequency is increased according to multiples based on the principles of fundamental wave, odd harmonic cancellation and even harmonic superposition, therefore, the push-push type oscillator is designed at a dichotomy position, the Q value of a resonator at the position is relatively high, the oscillator under the push-push principle has more excellent phase noise compared with the oscillator directly using the frequency multiplier for frequency multiplication, and the two reasons improve the phase noise performance to a certain extent.
The traditional push-push oscillator mostly uses an inverter to realize the phase reversal of two sub-oscillators, but the symmetry of loops of the two sub-oscillators is greatly reduced, so that the suppression degree of odd harmonics and the synthesis degree of second harmonics are deteriorated, and the synchronous adjustment of the frequency of two paths of fundamental wave signals is difficult to realize the function of a voltage-controlled oscillator.
Disclosure of Invention
The invention aims to provide a push-push type voltage-controlled oscillator based on a SIW differential filter.
The technical scheme for realizing the purpose of the invention is as follows: a push-push type voltage-controlled oscillator based on a SIW differential filter comprises the SIW differential filter, a first varactor diode group, a second varactor diode group, a first sub-oscillator, a second sub-oscillator and a SIW power synthesizer; the first and second varactor banks are coupled within a SIW differential filter; a first port and a second port of the SIW differential filter are respectively connected with two ends of a first sub-oscillator, and a third port and a fourth port of the SIW differential filter are respectively connected with two ends of a second sub-oscillator; the first sub-oscillator and the second sub-oscillator are connected with the SIW power synthesizer; and an output port of the SIW power combiner is used as an output port of the push-push voltage-controlled oscillator, wherein the first port and the third port, and the second port and the fourth port are differential ports.
Preferably, the first sub-oscillator comprises a first coupling microstrip line, a first directional coupler, a first transistor output matching circuit, a first transistor input matching circuit, a second coupling microstrip line and a first microstrip line which are connected in sequence, a coupling output port of the first directional coupler is connected with a third coupling microstrip line, and a first input port of the first oscillator output matching circuit and a first input port of the SIW power synthesizer are connected behind the third coupling microstrip line in sequence; the output end of the first transistor is connected with the first direct current bias circuit, and the input end of the first transistor is connected with the second direct current bias circuit; and the grid electrode of the first transistor is connected with a first stability control circuit.
Preferably, the first coupling microstrip line, the second coupling microstrip line and the third coupling microstrip line are two parallel high-resistance microstrip lines.
Preferably, the first dc bias circuit and the second dc bias circuit are both of a fan-shaped microstrip line structure.
Preferably, the first directional coupler is a four-port directional coupler and includes a signal input port, a through output port, a coupling output port and an isolation break, the signal input port is connected to the first transistor output matching circuit, the through output port is connected to the first coupling microstrip line, the isolation break is directly grounded, and the coupling output port is connected to the first port of the SIW differential filter.
Preferably, the second sub-oscillator is identical in structure to the first sub-oscillator and is centrally symmetric with respect to the SIW differential filter.
Preferably, the SIW differential filter includes a rectangular patch, a rectangular slot disposed at the center of the rectangular patch, a first source load coupling line group, a second source load coupling line group, a first pad and a second pad; the first source load coupling line group and the second source load coupling line group are respectively arranged between a third port and a fourth port and between a first port and a second port, the first source load coupling line group and the second source load coupling line group are respectively composed of two sections of right-angle microstrip lines, and the four sections of right-angle microstrip lines are respectively connected with one port in a one-to-one corresponding mode; the first bonding pad and the second bonding pad are located on the same side and used for placing the varactor group.
Preferably, the SIW power combiner comprises a substrate integrated waveguide with a T-shaped structure, and a first input port, a second input port and an output port which are formed by three microstrip transition structures are arranged on a inductive column formed by a metal through hole in the center.
Preferably, the central oscillation frequency points of the first sub-oscillator and the second sub-oscillator are designed as SIW differential filter QSCAt the peak.
Preferably, the SIW differential filter, the first varactor group, the second varactor group, the first sub-oscillator, the second sub-oscillator, and the SIW power combiner are all attached to a surface conductor layer on the upper surface of the dielectric substrate, and the substrate integrated waveguide is implemented by providing a metal via hole on the dielectric substrate.
Compared with the prior art, the invention has the following remarkable advantages: (1) the differential filter is used as a frequency selection network shared by the push-push type oscillator, so that the symmetry of the circuit is greatly improved, the fundamental wave suppression degree is enhanced, and the secondary harmonic output power is improved; (2) the invention uses the filter and the power synthesizer of the Substrate Integrated Waveguide (SIW) structure, improves the anti-interference capability and reduces the volume; (3) the present invention is based on a plurality of quality factors (Q)SC) Principle, raising Q at oscillation frequency pointSCThe value is further optimized, and the total phase noise of the oscillator is further optimized; (4) the variable capacitance diode is coupled in the SIW differential filter, and the central frequency of the filter is adjusted by changing the voltage at the two ends of the variable capacitance diode, so that the oscillation frequency point of the oscillator is changed, and the function of voltage tuning is realized.
The invention is described in more detail below with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic block diagram of a push-push type voltage controlled oscillator based on a SIW differential filter.
Fig. 2 is a schematic diagram of two fully symmetric sub-oscillators of a push-push type voltage controlled oscillator based on a SIW differential filter.
Fig. 3 is a diagram of a dielectric substrate structure of a push-push type voltage controlled oscillator based on the SIW differential filter.
Fig. 4 is a structural diagram of a SIW differential filter of a push-push type voltage-controlled oscillator based on the SIW differential filter.
Fig. 5 is a block diagram of a SIW power combiner of a push-push type voltage controlled oscillator based on a SIW differential filter.
Fig. 6 is a block diagram of a directional coupler of a push-push type voltage controlled oscillator based on a SIW differential filter.
Fig. 7 is a spectrum test diagram at the output port of a push-push type voltage controlled oscillator based on a SIW differential filter.
Fig. 8 is a graph of tuning frequency range and output power for a SIW differential filter based push-push type voltage controlled oscillator.
Detailed Description
As shown in fig. 1 to 3 and fig. 6, a push-push type voltage-controlled oscillator based on a SIW differential filter includes a SIW differential filter 1, a first varactor group 2-1, a second varactor group 2-2, a first sub-oscillator 3-1, a second sub-oscillator 3-2, and a SIW power combiner 4, all of which are attached to a surface conductor layer 18-1 on the upper surface of a dielectric substrate 18, and a substrate integrated waveguide is implemented by drilling a series of metal through holes 18-4 on the dielectric substrate 18; the lower surface of the dielectric substrate 18 is a common ground layer 18-2, and the metal through hole 18-3 is positioned in the dielectric substrate 18 and is connected with the surface conductor layer 18-1 and the common ground layer 18-2; the relative dielectric constant of the dielectric substrate is 2.2, and the thickness is 0.508 mm.
The first and second varactor banks 2-1 and 2-2 are coupled within the SIW differential filter 1; a first port 1-1 and a second port 1-2 of the SIW differential filter 1 are respectively connected with two ends of a first sub-oscillator 3-1, and a third port 1-3 and a fourth port 1-4 of the SIW differential filter 1 are respectively connected with two ends of a second sub-oscillator 3-2; the first sub-oscillator 3-1 and the second sub-oscillator 3-2 are connected with a SIW power synthesizer 4; an output port of the SIW power combiner 4 is used as an output port of a push-push voltage-controlled oscillator, wherein the first port 1-1 and the third port 1-3, and the second port 1-2 and the fourth port 1-4 are differential ports;
the first sub-oscillator 3-1 comprises a first coupling microstrip line 6-1, a first directional coupler 5-1, a first transistor output matching circuit 9-1, a first transistor 11-1, a first transistor input matching circuit 12-1, a second coupling microstrip line 15-1 and a first microstrip line 16-1 which are connected in sequence, wherein a coupling output port 5-5 of the first directional coupler 5-1 is connected with a third coupling microstrip line 8-1, and the third coupling microstrip line 8-1 is connected with a first oscillator output matching circuit 7-1 and a first input port 4-1 of the SIW power synthesizer 4 in sequence; the output end of the first transistor 11-1 is connected with a first direct current bias circuit 10-1 for positive power supply, and the input end is connected with a second direct current bias circuit 12-1 for negative power supply; the grid electrode of the first transistor 11-1 is connected with a first stability control circuit 14-1; the second sub-oscillator 3-2 is identical to the first sub-oscillator 3-1, being centrally symmetric with respect to the SIW differential filter 1. The structures of the first sub-oscillator 3-1 and the second sub-oscillator 3-2 can be arbitrarily replaced, and only the oscillation starting conditions of the oscillators need to be met, and it should be noted that the modifications are considered to be within the protection scope of the present invention.
In a further embodiment, the first coupling microstrip line 6-1, the second coupling microstrip line 15-1 and the third coupling microstrip line 8-1 are two parallel high-impedance microstrip lines.
In a further embodiment, the first dc bias circuit 10-1 and the second dc bias circuit 12-1 are both fan-shaped microstrip line structures.
The SIW differential filter 4 adopts a single SIW cavity structure, and TE is realized under differential mode response102And TE201The modes are excited while rejecting the common mode response. As shown in FIG. 4, the width of each port of the SIW differential filter 4 is 1.56mm, a rectangular slot 1-5, 6.4mm in length and 0.8mm in width is introduced into the central region, and the rectangular slot can separate the resonant frequency of the degenerate mode in the cavity to form TE respectively102And TE201Mode, and thus two poles are generated in the pass band, and the first and second source load coupling lines 1-9 and the second source load coupling line are placed at diagonal endsIn groups 1-10, the source load coupling line is right-angled, one right-angled side is 18.22mm long, the other is 11.3mm long, and the longer right-angled side is connected with each port of the SIW differential filter 1 and is used for inhibiting the TE302 mode. The first varactor group 2-1 and the second varactor group 2-2 are coupled to the first pad 1-6 and the second pad 1-7, and the respective voltages applied to the varactor groups are varied to flexibly control the TE102And TE201The center frequency of the mode, thereby changing the final output frequency and realizing the function of a voltage-controlled oscillator.
As shown in fig. 5, the SIW power combiner 4 includes a substrate integrated waveguide with a T-shaped structure, three inductive columns 4-4 formed by a first input port 4-1, a second input port 4-2, an output port 4-3 and a central metal via 18-3, wherein the first input port 4-1, the second input port 4-2, the output port 4-3 and the central metal via 18-3 are formed by a microstrip transition structure, the inductive columns 4-4 are metal vias with a diameter of 2.2mm, the first input port 4-1 and the second input port 4-2 are respectively connected with the first sub-oscillator 3-1 and the second sub-oscillator 3-2, and the output port 4-3 is used as an output port of a push-push type voltage controlled oscillator. The SIW power synthesizer can effectively improve the suppression degree of the fundamental wave, and increase the isolation degree of the two fundamental wave oscillators, and the parameters of the whole SIW power synthesizer are shown in fig. 5.
In the invention, as shown in fig. 2, the SIW differential filter is used as a common frequency selection network of two sub-oscillators to directly generate two paths of signals with opposite fundamental wave phases, so that the symmetry of the circuit is greatly improved, and the suppression degree of the fundamental waves and odd harmonics and the output power of even harmonics are improved. The principle is that the SIW differential filter has a high common mode rejection degree, so that common mode signals are rejected, differential mode signals are normally output, and finally two groups of signals with opposite fundamental wave phases are obtained and sent to a power combiner for combination, so that fundamental waves and odd harmonics can be counteracted, and even harmonic output is increased. The complex quality factor principle shows that the larger the group delay peak value of the resonator is, the higher the Q value thereof is, the better the phase noise characteristic of the corresponding oscillator is, and in view of the fact that the Q value is not easy to be simulated and calculated, the complex quality factor Q is introducedSCThe concept of (1), which can be directly obtained, can also improve the phase noise characteristics, the center oscillator frequency corresponding to this embodimentThe ratio is the Q of the differential filter at SIWSCAt the peak, and therefore has lower phase noise.
The test spectrogram of the invention is shown in fig. 7, which is a single frequency point output, the voltage at two ends of the varactor is 12V, the oscillator oscillates at 13.628GHz, the fundamental output power is-45.33 dBm, the second harmonic power is-13.17 dBm, the fundamental suppression degree reaches-32 dBc, and the phase noise at the position deviated from the carrier 1M is-126.87 dBc/Hz. As shown in fig. 8, when the tuning voltage gradually increases from 1.6V to 12V, the output frequency of the push-push type voltage-controlled oscillator moves from low frequency 13.484GHz to high frequency 13.628GHz, the tunable bandwidth is 144MHz, the output power of the second harmonic wave correspondingly increases with the increase of the voltage, the power range is-19.83 dBm to-13.17 dBm, and the output power of the fundamental wave is-45.33 dB to-41.17 dBm, thereby realizing the function of voltage tuning.
In summary, the push-push type voltage-controlled oscillator based on the SIW differential filter of the present invention uses the SIW differential filter as its shared frequency selection network to improve the fundamental wave suppression degree and the phase noise on the basis of the conventional push-push type oscillator, and couples the varactor diode in the SIW differential filter, so that the oscillator can perform voltage tuning, which greatly improves the use value of the push-push type oscillator, and is very suitable for the modern wireless communication system. The invention has the advantages of low power consumption, high fundamental wave suppression degree, low phase noise, high quality factor and wide adjustable bandwidth.

Claims (10)

1. A push-push type voltage-controlled oscillator based on a SIW differential filter is characterized by comprising a SIW differential filter (1), a first varactor diode group (2-1), a second varactor diode group (2-2), a first sub-oscillator (3-1), a second sub-oscillator (3-2) and a SIW power synthesizer (4); the first and second varactor diode banks (2-1, 2-2) are coupled within a SIW differential filter (1); a first port (1-1) and a second port (1-2) of the SIW differential filter (1) are respectively connected with two ends of a first sub-oscillator (3-1), and a third port (1-3) and a fourth port (1-4) of the SIW differential filter (1) are respectively connected with two ends of a second sub-oscillator (3-2); the first sub-oscillator (3-1) and the second sub-oscillator (3-2) are connected with a SIW power synthesizer (4); an output port of the SIW power combiner (4) is used as an output port of a push-push voltage-controlled oscillator, wherein the first port (1-1) and the third port (1-3), and the second port (1-2) and the fourth port (1-4) are differential ports.
2. The SIW differential filter based push-push type voltage controlled oscillator of claim 1, the oscillator is characterized in that the first sub-oscillator (3-1) comprises a first coupling microstrip line (6-1), a first directional coupler (5-1), a first transistor output matching circuit (9-1), a first transistor (11-1), a first transistor input matching circuit (12-1), a second coupling microstrip line (15-1) and a first microstrip line (16-1) which are connected in sequence, a coupling output port (5-5) of the first directional coupler (5-1) is connected with a third coupling microstrip line (8-1), and the third coupling microstrip line (8-1) is sequentially connected with a first oscillator output matching circuit (7-1) and a first input port (4-1) of a SIW power synthesizer (4); the output end of the first transistor (11-1) is connected with a first direct current bias circuit (10-1), and the input end of the first transistor is connected with a second direct current bias circuit (12-1); the first stability control circuit (14-1) is connected to the gate of the first transistor (11-1).
3. The SIW differential filter based push-push type voltage controlled oscillator according to claim 2, wherein the first (6-1), second (15-1) and third (8-1) coupled microstrip lines are two parallel high impedance microstrip lines.
4. The SIW differential filter based push-push type voltage controlled oscillator according to claim 2, wherein the first dc bias circuit (10-1) and the second dc bias circuit (12-1) are each a fan-shaped microstrip line structure.
5. The SIW differential filter based push-push type voltage controlled oscillator according to claim 2, wherein the first directional coupler (5-1) is a four-port directional coupler, and comprises a signal input port, a through output port, a coupling output port and an isolation port, the signal input port is connected to the first transistor output matching circuit (9-1), the through output port is connected to the first coupling microstrip line (6-1), the isolation break (5-6) is directly grounded, and the coupling output port is connected to the first port (1-1) of the SIW differential filter (1).
6. A SIW differential filter based push-push voltage controlled oscillator according to any of claims 1-5, characterized in that the second sub-oscillator (3-2) is structurally identical to the first sub-oscillator (3-1) and is centrally symmetric with respect to the SIW differential filter (1).
7. The SIW differential filter based push-push type voltage controlled oscillator according to claim 1, wherein the SIW differential filter (1) comprises a rectangular patch, a rectangular slot (1-5) disposed at the center of the rectangular patch, a first set of source load coupling lines (1-9), a second set of source load coupling lines (1-10), a first pad (1-6) and a second pad (1-7); the first source load coupling line group (1-9) and the second source load coupling line group (1-10) are respectively arranged between the third port (1-3) and the fourth port (1-4) and between the first port (1-1) and the second port (1-2), the first source load coupling line group (1-9) and the second source load coupling line group (1-10) are respectively composed of two right-angle microstrip lines, and the four right-angle microstrip lines are respectively connected with one port in a one-to-one corresponding mode; the first pads (1-6) and the second pads (1-7) are located on the same side for placing the varactor group.
8. The SIW differential filter-based push-push type voltage-controlled oscillator according to claim 1, wherein the SIW power combiner (4) comprises a substrate integrated waveguide with a T-shaped structure, and three first input ports (4-1), second input ports (4-2) and output ports (4-3) which are composed of microstrip-graded transition structures are arranged on an inductive column (4-4) formed by a metal through hole (18-3) in the center.
9. The method of claim 1Push-push type voltage-controlled oscillator of SIW differential filter, characterized in that the central oscillation frequency points of the first sub-oscillator (3-1) and the second sub-oscillator (3-2) are designed as SIW differential filter (1) QSCAt the peak.
10. The SIW differential filter-based push-push type voltage-controlled oscillator according to claim 1, wherein the SIW differential filter (1), the first varactor group (2-1), the second varactor group (2-2), the first sub-oscillator (3-1), the second sub-oscillator (3-2) and the SIW power combiner (4) are all attached to a surface conductor layer (18-1) on the upper surface of a dielectric substrate (18), and the substrate integrated waveguide is realized by providing metal vias (18-4) on the dielectric substrate (18).
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114938203A (en) * 2022-06-24 2022-08-23 电子科技大学 Duplex phase-shifting medium-pushing oscillation type frequency source with double-frequency point impedance matching
US11641178B2 (en) 2020-12-23 2023-05-02 Carrier Corporation Oscillator circuit

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Publication number Priority date Publication date Assignee Title
US20050156675A1 (en) * 2003-09-09 2005-07-21 Synergy Microwave Corporation Integrated low noise microwave wideband push-push VCO
CN104202044A (en) * 2014-08-06 2014-12-10 杭州电子科技大学 Differential push-push voltage controlled oscillator and signal generation device
CN107302344A (en) * 2017-05-18 2017-10-27 南京理工大学 Dual-pushing type oscillator based on differential bandpass filter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050156675A1 (en) * 2003-09-09 2005-07-21 Synergy Microwave Corporation Integrated low noise microwave wideband push-push VCO
CN104202044A (en) * 2014-08-06 2014-12-10 杭州电子科技大学 Differential push-push voltage controlled oscillator and signal generation device
CN107302344A (en) * 2017-05-18 2017-10-27 南京理工大学 Dual-pushing type oscillator based on differential bandpass filter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11641178B2 (en) 2020-12-23 2023-05-02 Carrier Corporation Oscillator circuit
CN114938203A (en) * 2022-06-24 2022-08-23 电子科技大学 Duplex phase-shifting medium-pushing oscillation type frequency source with double-frequency point impedance matching
CN114938203B (en) * 2022-06-24 2023-04-25 电子科技大学 Double-frequency point impedance matching duplex phase-shifting propulsive dielectric oscillation type frequency source

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