CN111244049B - Low-loss radio frequency vertical electric connection structure with embedded heat dissipation cavity and manufacturing method - Google Patents
Low-loss radio frequency vertical electric connection structure with embedded heat dissipation cavity and manufacturing method Download PDFInfo
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- CN111244049B CN111244049B CN202010065763.XA CN202010065763A CN111244049B CN 111244049 B CN111244049 B CN 111244049B CN 202010065763 A CN202010065763 A CN 202010065763A CN 111244049 B CN111244049 B CN 111244049B
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
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Abstract
The embodiment of the invention relates to the technical field of semiconductors, in particular to a low-loss radio frequency vertical electric connection structure with an embedded heat dissipation cavity and a manufacturing method thereof. A low-loss radio frequency vertical electrical connection structure with embedded heat dissipation cavity, comprising: the first part and the second part are vertically and symmetrically arranged on the upper layer and the lower layer; the first part includes: a silicon substrate having a groove formed therein; a Through Silicon Via (TSV) is arranged at the bottom of the groove of the silicon substrate; the Through Silicon Via (TSV) is of a cylindrical structure; the method comprises the following steps: the copper-clad plate comprises a copper core 3, an inner silicon column 4, a copper shielding cylinder 5 and an outer silicon column 6; the inner silicon column 4 wraps the copper core 3; the groove of the first part and the groove of the second part form a closed cooling medium cavity for storing cooling medium; and the through silicon vias TSV of the first part and the through silicon vias TSV of the second part are correspondingly connected one to one. The invention uses the cooling medium to cool through the heat dissipation cavity embedded in the silicon substrate, thereby improving the heat dissipation function. By arranging the outer copper shielding cylinder 5, the signal loss of the copper core 3 can be reduced.
Description
Technical Field
The embodiment of the invention relates to the technical field of semiconductors, in particular to a low-loss radio frequency vertical electric connection structure with an embedded heat dissipation cavity and a manufacturing method thereof.
Background
Background artin recent years, with the rapid progress of integrated circuit package design, the integrated circuit has also made great progress in terms of integration level, and its functions are becoming more and more abundant. For the new application appearing at present, higher requirements are put forward on chip packaging, and the chip stacking transmission signal loss of the current packaging technology is larger; after the chips are stacked, the heat productivity is increased, but the heat dissipation area is not relatively increased, so that the heat density is greatly improved; although the multi-chip package still has the original heat dissipation area, the thermal coupling is enhanced due to the interconnection of the heat sources, thereby causing a more serious thermal problem; the passive devices embedded in the substrate also have a certain heating problem, and the organic substrate or the ceramic substrate has poor heat dissipation and can generate serious heat; because the packaging volume is reduced, the packaging density is increased, and the heat dissipation is not easy to solve.
Disclosure of Invention
Therefore, the embodiment of the invention provides a low-loss radio frequency vertical electric connection structure with an embedded heat dissipation cavity and a manufacturing method thereof, and the heat dissipation capability of a radio frequency chip module is improved on the premise of not obviously increasing the vertical transmission loss of radio frequency signals.
In order to achieve the above object, the embodiments of the present invention provide the following technical solutions:
according to a first aspect of an embodiment of the present invention, a low-loss radio frequency vertical electrical connection structure with a built-in heat dissipation cavity includes: the first part and the second part are vertically and symmetrically arranged on the upper layer and the lower layer; the structure of the first part and the structure of the second part are completely the same;
the first part includes: a silicon substrate having a groove formed thereon;
one or more Through Silicon Vias (TSV) with shielding cylinders are arranged at the bottom of the groove; the TSV with the shielding cylinder is of a cylindrical structure; from the centre of a circle from inside to outside in proper order includes: the copper-clad plate comprises a copper core, an inner silicon column, a copper shielding cylinder and an outer silicon column; the inner silicon column and the outer silicon column are hollow cylinders and respectively wrap the copper core and the copper shielding cylinder; forming a four-layer wrapping and embedding cylindrical structure.
After the first part and the second part are aligned and bonded: the groove of the first part and the groove of the second part form a closed embedded heat dissipation cavity, and the embedded heat dissipation cavity is used for storing a cooling medium; and the through silicon vias TSV of the first part and the through silicon vias TSV of the second part are correspondingly connected one to one.
Further, for any Through Silicon Via (TSV), the TSV of the first portion and the TSV of the opposite second portion are connected through a copper-tin bonding pad by a bonding process.
Further, a liquid inlet and a liquid outlet are arranged on the silicon substrate;
the liquid inlet and the liquid outlet are respectively connected with the embedded heat dissipation cavity, and the liquid inlet is used for inputting cooling media into the embedded heat dissipation cavity; the liquid outlet is used for outputting cooling medium from the embedded heat dissipation cavity.
Further, the through silicon vias TSV include signal through silicon vias TSV and ground through silicon vias TSV;
for any signal TSV, a plurality of grounding TSV are uniformly distributed around the signal TSV by taking the signal TSV as a circle center.
Further, the number of the ground through-silicon vias TSV is 6.
Further, the circuit also comprises a copper-tin bonding pad which is used for connecting the TSV of the first part and the TSV of the corresponding second part;
the number of the copper-tin bonding pads is equal to that of the through silicon vias TSV of the first part; and a number equal to the number of through-silicon vias TSV of the second portion.
According to a second aspect of the embodiments of the present invention, an rf circuit includes the low-loss rf vertical electrical connection structure with embedded heat dissipation cavity as described in any one of the above and a plurality of rf transceiver units disposed on the silicon substrate.
According to a third aspect of the embodiments of the present invention, a low-loss radio frequency vertical electrical connection structure with an embedded heat dissipation cavity and a manufacturing method thereof include:
providing two silicon substrates with the same size;
for each silicon substrate, the following processing steps were employed:
generating a TSV (through silicon Via) hole with a shielding cylinder at a preset position;
etching a copper core hole with the depth of 200 microns and a shielding cylinder hole on the outer side on a silicon substrate by adopting a deep silicon etching process, and then carrying out in-hole electroplating copper filling by adopting an electroplating process; forming a copper core and a surrounding shielding cylinder;
wherein, the copper core is a solid cylinder, and the shielding cylinder is a hollow cylinder;
the copper core and the shielding cylinder are concentric, and the diameter of the shielding cylinder is larger than that of the copper core; a circle of silicon is arranged between the shielding cylinder and the copper core at intervals; the outer side of the shielding cylinder is also wrapped with silicon;
generating a groove on the surface of the silicon substrate on the periphery of the Through Silicon Via (TSV) filling hole of the shielding cylinder by using a deep silicon etching process;
and bonding the two processed silicon substrates, so that the through silicon vias TSV of the first silicon substrate and the through silicon vias TSV of the second silicon substrate are in one-to-one correspondence.
Further, the method further comprises:
providing one or more connection pads;
the connecting bonding pad is made of copper and tin;
and finally, grinding and thinning the front side and the back side of the double-layer silicon substrate after bonding to expose the end face of the copper pillar filled with the TSV for electrical connection.
The embodiment of the invention has the following advantages: the interconnection structure formed by the through silicon vias TSV of the upper layer and the lower layer reduces power consumption, RC delay and electromagnetic mutual inductance effect, and then improves signal transmission rate; the flexibility of wiring is improved, so that the interconnection density is greatly improved, and the system integration level is obviously improved; the RF chip is vertically transmitted, the stacking loss is less than 1dB @40GHz, and the embedded heat dissipation cavity is cooled by adopting a cooling medium, so that the heat dissipation effect is improved.
The through silicon vias TSV are vertically interconnected, and external interconnection lines are removed, so that the thickness and the size of the packaging body are reduced, the packaging body is small in appearance and light in weight, and the space utilization rate of a chip is improved; through embedded heat dissipation chamber, the heat dissipation function has been improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. It should be apparent that the drawings in the following description are merely exemplary, and that other embodiments can be derived from the drawings provided by those of ordinary skill in the art without inventive effort.
The structures, ratios, sizes, and the like shown in the present specification are only used for matching with the contents disclosed in the specification, so that those skilled in the art can understand and read the present invention, and do not limit the conditions for implementing the present invention, so that the present invention has no technical significance, and any structural modifications, changes in the ratio relationship, or adjustments of the sizes, without affecting the functions and purposes of the present invention, should still fall within the scope of the present invention.
Fig. 1 is a schematic structural diagram of a low-loss rf vertical electrical connection structure with an embedded heat dissipation cavity according to an embodiment of the present invention;
FIG. 2 is a schematic view of another embodiment of a low-loss RF vertical electrical connection with an embedded heat dissipation chamber;
fig. 3 is a schematic circuit diagram of a radio frequency unit according to an embodiment of the present invention;
fig. 4 is a schematic distribution diagram of through silicon vias TSV provided in the embodiments of the present invention;
fig. 5a, fig. 5b, fig. 5c, fig. 5d, fig. 5e, and fig. 5f are schematic views respectively illustrating a manufacturing process of a low-loss rf vertical electrical connection structure with an embedded heat dissipation cavity according to an embodiment of the present invention.
Detailed Description
The present invention is described in terms of particular embodiments, other advantages and features of the invention will become apparent to those skilled in the art from the following disclosure, and it is to be understood that the described embodiments are merely exemplary of the invention and that it is not intended to limit the invention to the particular embodiments disclosed. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the prior art, the radio frequency circuit is small in size, but a plurality of radio frequency units are included, and each radio frequency unit can generate heat, so that the whole radio frequency circuit is high in heating density; if the circuit overheats, the performance and the service life of the circuit are affected; there is no effective structural and manufacturing process solution that combines integrated heat dissipation and low-loss vertical transmission of radio frequency signals in the prior art.
Based on this, the present application provides a low-loss radio frequency vertical electrical connection structure with an embedded heat dissipation cavity, which is shown in fig. 1 for a structural schematic diagram of the low-loss radio frequency vertical electrical connection structure with an embedded heat dissipation cavity; the structure includes: the first part and the second part are vertically and symmetrically arranged on the upper layer and the lower layer; the structure of the first part and the structure of the second part are completely the same;
the first part includes: a silicon substrate 1 on which a groove 2 is provided;
one or more Through Silicon Vias (TSV) with shielding cylinders are arranged at the bottom of the groove; the TSV with the shielding cylinder is of a cylindrical structure; from the centre of a circle from inside to outside in proper order includes: a copper core 3 and an inner silicon column 4; the inner silicon column and the outer silicon column are hollow cylinders and respectively wrap the copper core and the copper shielding cylinder; forming a four-layer wrapping and embedding cylindrical structure.
When the first and second portions are bonded: the groove of the first part and the groove of the second part form a closed embedded heat dissipation cavity, and the embedded heat dissipation cavity is used for storing a cooling medium; and the through silicon vias TSV of the first part and the through silicon vias TSV of the second part are correspondingly connected one to one. The cooling medium material includes but is not limited to water, FC, carbon tetrachloride material.
The structure of this application has embedded heat dissipation chamber, adopts cooling medium to cool off radio frequency circuit, compares with prior art, has greatly improved refrigerated effect, has apparent meaning, can be so that the tube core temperature of radio frequency power amplifier chip is less than 150 degrees centigrade, has guaranteed simultaneously that radio frequency signal vertical transmission only is less than 1dB @40 GHz's loss through the heat dissipation layer.
In fig. 1, only a cross section of one through-silicon via TSV is shown, and actually, there are a plurality of through-silicon vias TSVs.
According to the technical scheme, radio frequency signals are transmitted through the through silicon vias TSV; the interconnection structure formed by the Through Silicon Vias (TSV) reduces power consumption, RC (resistance-capacitance) delay and electromagnetic mutual inductance effect, and then improves the signal transmission rate; the Through Silicon Via (TSV) enables the interconnection line to have the advantages of small aperture and fine pitch, so that the flexibility of wiring is improved, the interconnection density is greatly improved, and the system integration level is remarkably improved; the through silicon vias TSV realize vertical interconnection, and external interconnection lines are removed, so that the thickness and the size of the packaging body are reduced, and the packaging body has a small appearance and light weight; the cooling medium flows in the embedded heat dissipation cavity to work, so that the space utilization rate of the chip is improved, and the heat dissipation function is achieved.
The applicant finds that when the structure of the cavity is arranged, the attenuation of the signal loss of the TSV conductor, namely the copper core is relatively serious, and in order to reduce the attenuation of the signal, the applicant designs an outer concentric copper shielding cylinder by adopting a Faraday cage principle, wherein the Faraday cage is a cage formed by metal or a good conductor. The whole cage is an equipotential connector; the cage has no electric field inside; forming effective electrostatic shielding to prevent external interference.
Therefore, in one embodiment, in order to reduce signal loss, a copper shielding cylinder 5 is further arranged on the outer layer of the inner silicon column 4; it is worth emphasizing that the copper shielding cylinder 5 partially wraps the side of the inner silicon pillar 4; the inner silicon pillar 4 is not completely covered and the copper shield can 5 is not present in the embedded cooling cavity. The copper shielding cylinder covers the inner copper core, can effectively form shielding, and can remarkably reduce signal loss of the copper core.
In one embodiment, refer to fig. 2 for a schematic structural diagram of another low-loss rf vertical electrical connection structure with embedded heat dissipation cavity;
a liquid inlet 9 and a liquid outlet 8 are arranged on the silicon substrate;
the liquid inlet 9 and the liquid outlet 8 are respectively connected with the embedded heat dissipation cavity, and the liquid inlet 9 is used for inputting cooling media into the embedded heat dissipation cavity; the liquid outlet 8 is used for outputting cooling medium from the embedded heat dissipation cavity.
In the figure, the number of the radio frequency units 7 is 16, the number of the liquid inlets is 4, and the number of the liquid outlets is 2. The liquid inlets are arranged at two sides of the silicon substrate and are symmetrically arranged; the liquid outlets 8 are arranged in the middle of the silicon substrate and are symmetrically arranged. The integral heat dissipation structure comprises two layers which are oppositely arranged, and the volume of each layer is 50mm multiplied by 0.2 mm. Symmetrically distributing a liquid inlet 4 and a liquid outlet 2; the uniformity of temperature distribution is enhanced, the temperature difference of chips at different positions is reduced, and the heat dissipation effect is enhanced.
As for the radio frequency unit, it is prior art, and referring to fig. 3, it generally includes a switch, a power amplifier, a limiter, and a low noise amplifier connected together.
Regarding the through-silicon vias TSV, see fig. 4, the through-silicon vias TSV include signal through-silicon vias TSV and ground through-silicon vias TSV; for any signal TSV, a plurality of grounding TSV are uniformly distributed around the signal TSV by taking the signal TSV as a circle center. Preferably, the six grounded TSVs are uniformly surrounded by 60 degrees, and the six grounded TSVs can mutually cancel out the corresponding loss and interference.
For each TSV, a copper core 3, an inner silicon column 4, copper shielding copper 5 and an outer silicon column 6 are arranged from inside to outside in sequence; the copper core 3 and the inner silicon pillar 4 are conventional Through Silicon Vias (TSV); this application has improved again on prior art's basis, has increased copper shield copper 5, and copper shield copper 5 can form the shielding to inside copper core 3, reduces copper core 3's transmission signal's loss. This is a concrete embodiment of the principle of faraday cages.
In one embodiment, referring to fig. 1, for any one of the through-silicon vias TSV, the first portion of the through-silicon vias TSV and the opposite second portion of the through-silicon vias TSV are connected by a copper-tin pad 0.
The copper-tin bonding pad 0 is used for connecting the first part of the through silicon vias TSV and the corresponding second part of the through silicon vias TSV; the number of the connecting pieces is equal to that of the through silicon vias TSV of the first part; and a number equal to the number of through-silicon vias TSV of the second portion. The connecting piece is made of copper, gold, nickel, iron and the like. And radio frequency signals are transmitted through the through silicon via TSV and downwards transmitted from the upper layer through silicon via TSV, and the upper layer and the lower layer are bonded through the copper-tin bonding pad.
The application also provides a manufacturing method of the low-loss radio frequency vertical electrical connection structure with the embedded heat dissipation cavity, and the manufacturing method is shown in fig. 5a, fig. 5b, fig. 5c and fig. 5 d; the method comprises the following steps:
step S501, providing two silicon substrates with the same size;
referring to fig. 5a, the silicon substrates are identical in size; the same processing technology is adopted, and the processing positions are also the same;
for each silicon substrate, the following processing steps were employed:
step S502, generating a through-silicon via (TSV) hole at a predetermined position, wherein the TSV hole does not penetrate through a silicon substrate; referring to fig. 5b, in the fabrication of the holes, the silicon substrate is first subjected to deep silicon etching using an etching apparatus. Photoresist is selected as a mask material for deep silicon etching. The Bosch etching principle is utilized in the etching process, which is not described in detail for the prior art.
Step S503, electroplating copper filling in the hole; forming a copper core 3 and a copper shielding cylinder 5;
wherein, the copper core 3 is a solid cylinder, and the copper shielding cylinder 5 is a hollow cylinder;
the copper core and the copper shielding cylinder are concentric, and the diameter of the copper shielding cylinder is larger than that of the copper core; a circle of inner silicon columns 4 are arranged between the copper shielding cylinder and the copper core at intervals;
with reference to fig. 5c, it is worth emphasizing that the copper core 3 and the copper shielding cylinder 5 may be produced simultaneously in one process step; or sequentially generating, namely generating the copper core 3 and then generating the copper shielding cylinder 5; wherein, the height of the copper shielding cylinder 5 is smaller than that of the copper core 3.
Before electroplating, some pretreatment steps can be taken, including:
deionized water washing, namely washing the surface of the silicon substrate by using an ion water gun; the air bubbles are discharged;
and (4) vacuum pretreatment, wherein the vacuumizing pretreatment can effectively discharge bubbles in the silicon hole, so that the hole can be filled with electroplating solution, and a good filling effect is achieved.
Step S504, etching the rest of the silicon substrate by using an etching process to form a groove on the surface of the silicon substrate, see fig. 5 d;
step S505, grinding and thinning the front and back sides of the double-layer silicon substrate after bonding, and exposing the end faces of the copper core 3 and the copper shielding cylinder 5 filled with the TSV for electrical connection; see fig. 5 e. Step S506, arranging a liquid inlet and a liquid outlet at proper positions on the surface of the silicon substrate, and punching the silicon substrate to be connected to the cavity part in a laser punching mode to form a medium flow channel; referring to fig. 5f, reference numeral 51 indicates the flow path of the surface opening and the cavity; the opening can be used as a liquid inlet and also can be used as a liquid outlet.
It is worth emphasizing that the sequence of step S506 and step S505 may be reversed.
Step S507, buckling the two processed silicon substrates, and bonding the two processed silicon substrates by using a connecting bonding pad; and the through silicon vias TSV of the first silicon substrate and the through silicon vias TSV of the second silicon substrate are in one-to-one correspondence and are connected through the connecting bonding pads. And after the fastening, an embedded heat dissipation cavity is formed for storing cooling media.
It is worth emphasizing that the connecting piece can also be in the form of a bonding pad, and the bonding pad is processed and arranged at the top end of the copper column 3; when the two copper columns 3 are buckled, the upper copper column and the lower copper column can be connected through a bonding pad.
In one embodiment, the method further comprises: providing one or more copper-tin pads; and slotting a copper-tin pad at the top of each TSV, and installing the copper-tin pad in the slot at the top of the TSV in an interference fit manner to connect the first part and the second part.
The application also provides a radio frequency circuit, which comprises the radio frequency vertical symmetrical radiator embedded with the cooling medium and a plurality of radio frequency units arranged on the silicon substrate.
Although the invention has been described in detail above with reference to a general description and specific examples, it will be apparent to one skilled in the art that modifications or improvements may be made thereto based on the invention. Accordingly, such modifications and improvements are intended to be within the scope of the invention as claimed.
Claims (6)
1. A low-loss radio frequency vertical electrical connection structure with a built-in heat dissipation cavity is characterized by comprising: the first part and the second part are vertically and symmetrically arranged on the upper layer and the lower layer; the structure of the first part and the structure of the second part are completely the same;
the first part includes: a silicon substrate having a groove formed thereon;
one or more Through Silicon Vias (TSV) with shielding cylinders are arranged at the bottom of the groove; the TSV with the shielding cylinder is of a cylindrical structure; from the centre of a circle from inside to outside in proper order includes: a copper core and an inner silicon column; the inner silicon column wraps the copper core;
after the first part and the second part are buckled: the groove of the first part and the groove of the second part form a closed embedded heat dissipation cavity, and the embedded heat dissipation cavity is used for storing a cooling medium; the through silicon vias TSV of the first part and the through silicon vias TSV of the second part are connected in a one-to-one correspondence mode;
the shielding cylinder is a copper shielding cylinder; the copper shielding cylinder wraps the inner silicon column; the outer silicon column wraps the copper shielding cylinder;
from the centre of a circle from inside to outside in proper order includes: the copper-clad plate comprises a copper core, an inner silicon column, a copper shielding cylinder and an outer silicon column; the inner silicon column and the outer silicon column are hollow cylinders and respectively wrap the copper core and the copper shielding cylinder; forming a four-layer wrapping and embedding cylindrical structure.
2. The low-loss radio frequency vertical electrical connection structure with an embedded heat dissipation cavity as recited in claim 1, wherein the silicon substrate is provided with a liquid inlet and a liquid outlet;
the liquid inlet and the liquid outlet are respectively connected with the embedded heat dissipation cavity, and the liquid inlet is used for inputting cooling media into the embedded heat dissipation cavity; the liquid outlet is used for outputting cooling medium from the embedded heat dissipation cavity.
3. The low-loss radio frequency vertical electrical connection structure with embedded heat dissipation cavity of claim 1, wherein the through-silicon vias TSV include signal through-silicon vias TSV and ground through-silicon vias TSV;
for any signal TSV, a plurality of grounding TSV are uniformly distributed around the signal TSV by taking the signal TSV as a circle center.
4. The cavity-embedded low-loss RF vertical electrical connection structure of claim 3, wherein the number of grounded through-silicon vias (TSV) is 6.
5. A radio frequency circuit, comprising the low-loss radio frequency vertical electrical connection structure with embedded heat dissipation cavity of any of claims 1 to 4 and a plurality of radio frequency transceiver units disposed on the silicon substrate.
6. A manufacturing method of a low-loss radio frequency vertical electric connection structure with a built-in heat dissipation cavity is characterized by comprising the following steps:
providing two silicon substrates with the same size;
for each silicon substrate, the following processing steps were employed:
generating a TSV (through silicon Via) hole with a shielding cylinder at a preset position;
etching a copper core hole and a shielding cylinder hole on the outer side on a silicon substrate by adopting a deep silicon etching process;
electroplating copper filling is carried out in the hole by adopting an electroplating process to form a copper core and a copper shielding cylinder;
wherein, the copper core is a solid cylinder, and the copper shielding cylinder is a hollow cylinder;
the copper core and the copper shielding cylinder are concentric, and the diameter of the copper shielding cylinder is larger than that of the copper core; a circle of inner silicon columns are arranged between the copper shielding cylinder and the copper core at intervals;
generating a groove on the surface of the silicon substrate by using an etching process;
and buckling the two processed silicon substrates, so that the through silicon vias TSV of the first silicon substrate and the through silicon vias TSV of the second silicon substrate are in one-to-one correspondence.
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| CN107706173A (en) * | 2017-09-30 | 2018-02-16 | 成都嘉纳海威科技有限责任公司 | Silicon hole interconnection architecture and preparation method thereof and silicon hole RF transmitting structures |
| CN109411433A (en) * | 2018-09-28 | 2019-03-01 | 杭州电子科技大学 | A kind of more bit through-silicon via structures of shielding difference and preparation method thereof |
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