CN111243865B - Quantum dot sensitized cell and preparation method thereof - Google Patents
Quantum dot sensitized cell and preparation method thereof Download PDFInfo
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- CN111243865B CN111243865B CN201811432327.0A CN201811432327A CN111243865B CN 111243865 B CN111243865 B CN 111243865B CN 201811432327 A CN201811432327 A CN 201811432327A CN 111243865 B CN111243865 B CN 111243865B
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- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 2
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- YYROPELSRYBVMQ-UHFFFAOYSA-N 4-toluenesulfonyl chloride Chemical compound CC1=CC=C(S(Cl)(=O)=O)C=C1 YYROPELSRYBVMQ-UHFFFAOYSA-N 0.000 description 2
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- RCPRASFPKGVDGZ-UHFFFAOYSA-N 1,6-dimethylcyclohexa-2,4-diene-1-sulfonyl chloride Chemical compound CC1C=CC=CC1(C)S(Cl)(=O)=O RCPRASFPKGVDGZ-UHFFFAOYSA-N 0.000 description 1
- HDECRAPHCDXMIJ-UHFFFAOYSA-N 2-methylbenzenesulfonyl chloride Chemical compound CC1=CC=CC=C1S(Cl)(=O)=O HDECRAPHCDXMIJ-UHFFFAOYSA-N 0.000 description 1
- KZNBMKMFIGSQNV-UHFFFAOYSA-N 3-(dimethylamino)benzenesulfonyl chloride Chemical compound CN(C)C1=CC=CC(S(Cl)(=O)=O)=C1 KZNBMKMFIGSQNV-UHFFFAOYSA-N 0.000 description 1
- KFPMLWUKHQMEBU-UHFFFAOYSA-N 3-methylbenzenesulfonyl chloride Chemical compound CC1=CC=CC(S(Cl)(=O)=O)=C1 KFPMLWUKHQMEBU-UHFFFAOYSA-N 0.000 description 1
- NQUVCRCCRXRJCK-UHFFFAOYSA-N 4-methylbenzoyl chloride Chemical compound CC1=CC=C(C(Cl)=O)C=C1 NQUVCRCCRXRJCK-UHFFFAOYSA-N 0.000 description 1
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- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hybrid Cells (AREA)
Abstract
The invention discloses a quantum dot sensitized cell and a preparation method thereof, wherein the quantum dot sensitized cell comprises a photoelectrode, a counter electrode and a quantum dot sensitizer material layer arranged between the photoelectrode and the counter electrode, the quantum dot sensitizer material layer is made of a mixed material consisting of a composite material and quantum dots, the composite material comprises oil-soluble PAMAM dendrimer and metal atom clusters combined in a cavity of the oil-soluble PAMAM dendrimer, and the exciton Bohr radius of the quantum dots is larger than the diameter of the quantum dots. According to the invention, the mixed material composed of the composite material and the quantum dots is used as the material of the quantum dot sensitizer material layer of the quantum dot sensitized battery, so that the charge transfer speed of the quantum dot sensitizer material layer can be effectively increased, and the open-circuit voltage of the quantum dot sensitized battery is increased.
Description
Technical Field
The invention relates to the field of quantum dots, in particular to a quantum dot sensitized cell and a preparation method thereof.
Background
The quantum dot sensitized cell attracts attention because of its low manufacturing cost and high efficiency. It is more critical for quantum dot sensitized cells how to increase the open circuit voltage of the cell.
For the quantum dot (quantum dot with exciton Bohr radius far larger than the particle diameter) absorption layer, how to effectively conduct out the charges is important to increase the open circuit voltage of the battery, so the charge transfer speed of the quantum dot sensitizer material layer is a research technical point. In order to increase the charge transfer rate of the quantum dot sensitizer material layer, the prior art is mainly realized by improving the ligand on the surface of the quantum dot or modifying the interface between the quantum dot sensitizer material layer and other functional layers.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide a quantum dot sensitized cell and a preparation method thereof, and aims to solve the problem of low open-circuit voltage of the conventional quantum dot cell.
The technical scheme of the invention is as follows:
a quantum dot sensitized battery comprises a photoelectrode, a counter electrode and a quantum dot sensitizer material layer arranged between the photoelectrode and the counter electrode, and is characterized in that the quantum dot sensitizer material layer is made of a mixed material composed of a composite material and quantum dots, the composite material comprises oil-soluble PAMAM dendrimer and metal atom clusters combined in a cavity of the oil-soluble PAMAM dendrimer, and the exciton Bohr radius of the quantum dots is larger than the diameter of the quantum dots.
A preparation method of a quantum dot sensitized battery comprises the following steps:
providing a substrate, wherein a photoelectrode is arranged on the surface of the substrate, and a quantum dot sensitizer material layer is prepared on the surface of the photoelectrode;
the quantum dot sensitizer material layer is a mixed material consisting of a composite material and quantum dots, the composite material comprises oil-soluble PAMAM dendrimer and metal atom clusters combined in a cavity of the oil-soluble PAMAM dendrimer, and the exciton Bohr radius of the quantum dots is larger than the diameter of the quantum dots.
Has the advantages that: according to the invention, a mixed material composed of a composite material and quantum dots is used as a material of a quantum dot sensitizer material layer of a quantum dot sensitized battery, and as oil-soluble PAMAM (polyamide-amine) dendrimer in the composite material is both a sigma donor and a pi donor, charge migration can be generated between the oil-soluble PAMAM dendrimer and the metal atom cluster, and charges in the quantum dots can be rapidly transferred to electrodes through the composite material; furthermore, because the space volume of the oil-soluble PAMAM dendrimer in the composite material is larger than the particle diameter of the quantum dot, the composite material can enlarge the space distance between the quantum dots, so that charges between the quantum dots cannot be transferred mutually, and after the mixed material forms a quantum dot sensitizer material layer, the composite material can be wrapped on the surface of the quantum dot, and similarly, the organic molecular layer with better charge conductivity is wrapped on the surface of the quantum dot, so that charges in the quantum dot can be further quickly and effectively transferred to an electrode. Therefore, the mixed material composed of the composite material and the quantum dots is used as the material of the quantum dot sensitizer material layer of the quantum dot sensitized battery, so that the charge migration speed of the quantum dot sensitizer material layer can be effectively increased, and the open-circuit voltage of the quantum dot sensitized battery is increased.
Drawings
Fig. 1 is a schematic structural diagram of a quantum dot sensitized cell according to a preferred embodiment of the present invention.
Detailed Description
The invention provides a quantum dot sensitized cell and a preparation method thereof, and the invention is further described in detail below in order to make the purpose, technical scheme and effect of the invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The quantum dot sensitized cell is a solar cell taking quantum dots as a photosensitizer, and the specific quantum confinement effect, the impact ionization effect and the Auger effect of the quantum dots can effectively enhance the photoelectric conversion efficiency of the quantum dot sensitized cell. The basic structure of the quantum dot sensitized cell mainly comprises a semiconductor photoelectrode, a counter electrode, a quantum dot sensitizer and an electrolyte, wherein the quantum dot sensitizer and the electrolyte are arranged between the semiconductor photoelectrode and the counter electrode, the semiconductor photoelectrode is usually arranged on a substrate (conductive glass), the semiconductor photoelectrode is used as a carrier of the quantum dot photosensitizer and is mainly used for transmitting electrons generated by excitation of the quantum dot photosensitizer to the substrate, and the substrate is used for conducting collected electrons to an external circuit; the electrolyte generally consists of a reduction state substance and an oxidation state substance and plays a role in reducing an oxidation quantum dot sensitizer and circulating current, namely, the electrolyte transfers holes accumulated on a valence band of a quantum dot outwards through oxidation-reduction reaction, and reduces the hole density so that thermal electrons are not easy to recombine with the holes of the quantum dot, and therefore the reduction rate of the electrolyte to the quantum dot is larger than the electron-hole recombination rate of the quantum dot; the function of the counter electrode is to catalyze the rapid reduction of the oxidation state electrolyte and form a loop with the working electrode.
The specific embodiments of the present invention will be described mainly by taking a quantum dot sensitized cell as shown in fig. 1 as an example. Specifically, as shown in fig. 1, the quantum dot sensitized cell includes a substrate 10, a photoelectrode 20, a quantum dot sensitizer material layer 30, and a counter electrode 40, which are stacked from bottom to top, wherein the quantum dot sensitizer material layer is a mixed material composed of a composite material and quantum dots, the composite material includes an oil-soluble PAMAM dendrimer and metal atom clusters combined in a cavity of the oil-soluble PAMAM dendrimer, and an exciton bohr radius of the quantum dots is greater than a diameter of the quantum dots.
In the embodiment, the mixed material composed of the composite material and the quantum dots is used as the material of the quantum dot sensitizer material layer of the quantum dot sensitized battery, so that the charge transfer speed of the quantum dot sensitizer material layer can be effectively increased, and the open-circuit voltage of the quantum dot sensitized battery is increased. The mechanism for achieving the above effects is specifically as follows:
in the mixed material, as the oil-soluble PAMAM (polyamide-amine) dendrimer in the composite material is both a sigma donor and a pi donor, charge migration can be generated between the oil-soluble PAMAM dendrimer and the metal atom cluster, and therefore, after the mixed material is prepared into a quantum dot sensitizer material layer, charges in the quantum dots can be rapidly transferred to electrodes through the oil-soluble PAMAM dendrimer (composite material) containing the metal atom cluster in the cavity; furthermore, because the space volume of the oil-soluble PAMAM dendrimer in the composite material is larger than the particle diameter of the quantum dot, the composite material can enlarge the space distance between the quantum dots, so that charges between the quantum dots cannot be transferred mutually, and after the mixed material forms a quantum dot sensitizer material layer, the composite material can be wrapped on the surface of the quantum dot, and similarly, the organic molecular layer with better charge conductivity is wrapped on the surface of the quantum dot, so that charges in the quantum dot can be further quickly and effectively transferred to an electrode. Therefore, in the embodiment, the mixed material composed of the composite material and the quantum dots is used as the material of the quantum dot sensitizer material layer of the quantum dot sensitized cell, so that the charge transfer speed of the quantum dot sensitizer material layer can be effectively increased, and the open-circuit voltage of the quantum dot sensitized cell is increased.
In this embodiment, the composite material includes an oil-soluble PAMAM dendrimer and a metal cluster bonded in a cavity of the oil-soluble PAMAM dendrimer, wherein the specific preparation method of the oil-soluble PAMAM dendrimer includes the steps of: providing a PAMAM dendrimer; dissolving the PAMAM dendrimer in a polar solvent to prepare a PAMAM dendrimer solution; adding an end group modifier into the PAMAM dendrimer solution in an inert atmosphere, and mixing to enable an amino functional group on the PAMAM dendrimer to react with the end group modifier to generate an oil-soluble group, thereby obtaining the oil-soluble PAMAM dendrimer.
The PAMAM dendrimer which is not modified by the terminal group is a hydrophilic organic molecule which can be stably stored and dissolved in a polar solvent to form a PAMAM dendrimer solution; and adding an excessive amount of end group modifier into the PAMAM dendrimer solution in an inert atmosphere, and rapidly stirring to enable an amino functional group on the PAMAM dendrimer to react with the end group modifier to generate an oil-soluble group, thereby preparing the oil-soluble PAMAM dendrimer. Preferably, the terminal group modifier is selected from one or more of p-toluenesulfonyl chloride, o-toluenesulfonyl chloride, m-toluenesulfonyl chloride, p-dimethylaminobenzenesulfonyl chloride, o-dimethylbenzenesulfonyl chloride, and m-dimethylaminobenzenesulfonyl chloride, but is not limited thereto. By way of example, when p-dimethylaminobenzenesulfonyl chloride is added to a PAMAM dendrimer solution, the reaction is represented by the formula:
Dendrimer-NH2+(CH3)2-N-C10H6-SOCl→Dendrimer-NHOS- C10H6-N-(CH3)2+
HCl；
when p-toluoyl chloride is added to the PAMAM dendrimer solution, the reaction is as follows:
Dendrimer-NH2+CH3-C6H4-SOOCl→Dendrimer-NHSOO-C6H4-CH3(ii) a The Dendrimer-NH2The PAMAM dendrimer is a PAMAM dendrimer from the fifth generation to the tenth generation, and can be effectively dispersed in an oil phase solution after being modified by an end group, so that the PAMAM dendrimer and oil phase quantum dots can be conveniently mixed to form a solid film.
In this embodiment, the PAMAM (polyamide-amine) dendrimer is obtained by reacting different molecular units a (ethylenediamine) and B (methyl acrylate), and may be synthesized by a divergent method, in the first step, ethylenediamine and methyl acrylate react to generate carboxylate, in the second step, the carboxylate obtained reacts with excess ethylenediamine, and after the above two reactions, the first generation PAMAM dendrimer may be obtained, and the above two reactions may be repeated to obtain a higher generation PAMAM dendrimer. The PAMAM dendrimer with different generations contains the molecular units A and B with the general formulas: a (2)n+2n-1+…+2n-3)+B(2n+1+2n+…+2n-1) Wherein the value of n is 3-10; in addition, the first generation PAMAM dendrimer has a general formula a +4B for molecular unit a and molecular unit B, and the second generation PAMAM dendrimer has a general formula 5A +8B for molecular unit a and molecular unit B.
In a preferred embodiment, the oil-soluble PAMAM dendrimer is selected from one or more of the fifth generation PAMAM dendrimer (G5), the sixth generation PAMAM dendrimer (G6), the seventh generation PAMAM dendrimer (G7), the eighth generation PAMAM dendrimer (G8), the ninth generation PAMAM dendrimer (G9), and the tenth generation PAMAM dendrimer (G10), but is not limited thereto. When the generation number of the PAMAM dendrimer is G5-G10, the PAMAM dendrimer of G5-G10 generation can be used as a candidate material for preparing a cavity containing metal atom clusters, because the PAMAM dendrimer has more functional groups (amine groups) on the periphery and has electronegativity, and a complete and closed cavity can be formed between the functional groups by generating electrostatic interaction.
The composite material provided by the embodiment can be stably stored, and the main factor is that the N atoms in the oil-soluble PAMAM dendrimer cavity can generate coordination with the metal atoms in the metal atom clusters. If the PAMAM dendrimer is one of the first generation PAMAM dendrimer to the fourth generation PAMAM dendrimer, the PAMAM dendrimer cannot be used as a candidate material for preparing a metal cluster in a cavity because the PAMAM dendrimer does not have a complete and closed cavity; if the generation number of PAMAM dendrimer is greater than G10, the PAMAM dendrimer is too large in molecular weight and tends to form precipitates when dispersed in a solvent, and therefore, cannot be used as a candidate material for preparing a material containing metal clusters in the cavity.
In a preferred embodiment, the oil-soluble PAMAM dendrimer is selected from one or both of a fifth generation PAMAM dendrimer and a sixth generation PAMAM dendrimer. When the types of the metal clusters combined in the PAMAM dendrimer cavity are the same and the particle sizes are consistent, the charge transmission capacity of the composite material is weakened along with the algebraic increase of the PAMAM dendrimer, and the main reason is that the larger the algebraic number of the PAMAM dendrimer is, the larger the molecular volume of the PAMAM dendrimer is, the more the cavities in the molecules are, and the higher the insulativity of the molecules is. In this embodiment, the generation number of the oil-soluble PAMAM dendrimer is preferably one or two of G5 and G6, which can ensure that the quantum dot sensitizer material layer prepared from the hybrid material has a strong charge transport capability, and is helpful for improving the open-circuit voltage of the quantum dot sensitized cell.
In a preferred embodiment, the element species of the metal atom cluster is selected from one or more of Au, Ag, Cu, Fe, Ni, Zn and Mo, but not limited thereto. When the number of generations of PAMAM dendrimer in the composite material is the same and the particle sizes of the metal atom clusters in the cavity are consistent, the charge transport capacity of the composite material is enhanced along with the activity enhancement of the metal atom clusters, for example, [ PAMAM (G5) + Au ] > [ PAMAM (G5) + Ag ] > [ PAMAM (G5) + Cu ] > …; the main principle is that the stronger the atom activity of the metal atom cluster is, the more free electrons are involved in charge transfer, i.e. the stronger the charge transfer capability is. More preferably, in order to ensure that the quantum dot sensitizer material layer prepared from the hybrid material has a strong charge transport capability, the present embodiment preferably selects the element species of the metal atom cluster as one or more of Au, Ag, and Cu.
In a preferred embodiment, the metal atom clusters have a particle size of 2 to 5 nm. The charge transport capability of the composite material is not only related to the activity of the metal atom clusters, but also related to the particle size of the metal atom clusters. When the generation numbers of PAMAM dendrimer in the composite material are the same and the types of metal atom clusters in the cavity are consistent, the charge transport capability of the composite material is enhanced along with the increase of the particle size of the metal atom clusters, for example, [ PAMAM (G5) + Au (1nm) ] < [ PAMAM (G5) + Au (2nm) ] < [ PAMAM (G5) + Au (3nm) ] …; the main principle is that the larger the particle size of the metal atom cluster is, the faster the charge transfer capability between the metal atom cluster particles is.
In a preferred embodiment, the quantum dots are oil phase quantum dots selected from one or more of PbS, PbSe, CdTe, HgS, AgS, and InP, but not limited thereto.
In a preferred embodiment, the mass ratio of the composite material to the quantum dots in the mixed material is 100:5 to 100.
Preferably, the material of the photoelectrode is selected from TiO, ZnO, CdO and CeO, but is not limited thereto.
Preferably, the electron transport layer material includes, but is not limited to, one or more of zinc oxide, nickel oxide, and titanium oxide.
Preferably, the material of the counter electrode is selected from Pt.
Further, the present invention also provides an embodiment of a method for manufacturing a quantum dot sensitized cell as shown in fig. 1, which specifically includes the following steps:
providing a substrate, and preparing a photoelectrode on the substrate;
preparing a quantum dot sensitizer material layer on the photoelectric electrode;
preparing a counter electrode on the quantum dot sensitizer material layer, and injecting electrolyte between the photoelectrode and the counter electrode to obtain the quantum dot sensitized cell;
the quantum dot sensitizer material layer is a mixed material consisting of a composite material and quantum dots, the composite material comprises oil-soluble PAMAM dendrimer and metal atom clusters combined in a cavity of the oil-soluble PAMAM dendrimer, and the exciton Bohr radius of the quantum dots is larger than the diameter of the quantum dots.
In the present invention, the preparation method of each layer may be a chemical method or a physical method, wherein the chemical method includes, but is not limited to, one or more of a chemical vapor deposition method, a continuous ionic layer adsorption and reaction method, an anodic oxidation method, an electrolytic deposition method, and a coprecipitation method; the physical method includes, but is not limited to, one or more of solution method (such as spin coating, printing, knife coating, dip-coating, dipping, spraying, roll coating, casting, slit coating, or bar coating), evaporation method (such as thermal evaporation, electron beam evaporation, magnetron sputtering, or multi-arc ion plating), deposition method (such as physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.).
In a preferred embodiment, the method for preparing the mixed material comprises the following steps: providing a composite material comprising an oil soluble PAMAM dendrimer and metal clusters bound within the PAMAM dendrimer cavity; and (2) mixing the composite material with the quantum dots according to the mass ratio of 100:5-100 percent of the mixture is added into a nonpolar solvent to be mixed to prepare a colloidal solution, and the colloidal solution is dried to prepare the mixed material.
Preferably, the non-polar solvent is selected from one or more of toluene, chlorobenzene, n-hexane, n-octane and chloroform.
Preferably, in the colloidal solution of the embodiment, the concentration of the composite material is 10-60 mg/ml; the concentration of the quantum dots is 20-80 mg/ml.
In a preferred embodiment, the colloidal solution is deposited on a photoelectrode by coating or printing to prepare a film, and annealing treatment is carried out to obtain the quantum dot sensitizer material layer formed by the composite material and the quantum dots.
Preferably, after the colloid solution is prepared into a film, the film layer is annealed at the temperature of 60-150 ℃ to form the quantum dot sensitizer material layer.
According to the invention, the mixed material composed of the composite material and the quantum dots is used as the material of the quantum dot sensitizer material layer of the quantum dot sensitized cell, so that the charge transfer speed of the quantum dot sensitizer material layer can be effectively increased, and the open-circuit voltage of the quantum dot sensitized cell is increased.
In summary, the quantum dot sensitized cell provided by the invention includes a cathode, an anode, and a quantum dot sensitizer material layer disposed between the cathode and the anode, where the quantum dot sensitizer material layer is a mixed material composed of a composite material and quantum dots, the composite material includes an oil-soluble PAMAM dendrimer and metal atomic clusters combined in a cavity of the oil-soluble PAMAM dendrimer, and an exciton bohr radius of the quantum dots is greater than a diameter of the quantum dots. Because the oil-soluble PAMAM (polyamide-amine) dendrimer in the composite material is both a sigma donor and a pi donor, charge migration can be generated between the oil-soluble PAMAM dendrimer and the metal atom cluster, and therefore, after the mixed material is prepared into a quantum dot sensitizer material layer, charges in the quantum dots can be rapidly transferred to electrodes through the oil-soluble PAMAM dendrimer (composite material) containing the metal atom cluster in the cavity; furthermore, because the space volume of the oil-soluble PAMAM dendrimer in the composite material is larger than the particle diameter of the quantum dot, the composite material can enlarge the space distance between the quantum dots, so that charges between the quantum dots cannot be transferred mutually, and after the mixed material forms a quantum dot sensitizer material layer, the composite material can be wrapped on the surface of the quantum dot, and similarly, the organic molecular layer with better charge conductivity is wrapped on the surface of the quantum dot, so that charges in the quantum dot can be further quickly and effectively transferred to an electrode. Therefore, the mixed material composed of the composite material and the quantum dots is used as the material of the quantum dot sensitizer material layer of the quantum dot sensitized battery, so that the charge migration speed of the quantum dot sensitizer material layer can be effectively increased, and the open-circuit voltage of the quantum dot sensitized battery is increased.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (7)
1. A quantum dot sensitized battery comprises a photoelectrode, a counter electrode and a quantum dot sensitizer material layer arranged between the photoelectrode and the counter electrode, and is characterized in that the quantum dot sensitizer material layer is made of a mixed material composed of a composite material and quantum dots, the composite material comprises oil-soluble PAMAM dendrimer and metal atom clusters combined in a cavity of the oil-soluble PAMAM dendrimer, the oil-soluble PAMAM dendrimer is selected from one or more of the PAMAM dendrimer of the fifth generation to the PAMAM of the tenth generation, the element types of the metal atom clusters are selected from one or more of Au, Ag, Cu, Fe, Ni, Zn and Mo, the exciton Bohr radius of the quantum dots is larger than the diameter of the quantum dots, and the particle size of the metal atom clusters is 2-5 nm.
2. The quantum dot sensitized cell according to claim 1, wherein the oil soluble PAMAM dendrimer is selected from one or both of fifth and sixth generation PAMAM dendrimers.
3. The quantum dot sensitized battery according to claim 1, wherein the quantum dots are selected from one or more of PbS, PbSe, CdTe, HgS, AgS and InP.
4. A preparation method of a quantum dot sensitized battery is characterized by comprising the following steps:
providing a substrate, wherein a photoelectrode is arranged on the surface of the substrate, and a quantum dot sensitizer material layer is prepared on the surface of the photoelectrode;
the quantum dot sensitizer material layer is a mixed material composed of a composite material and quantum dots, the composite material comprises oil-soluble PAMAM dendrimer and metal atom clusters combined in a cavity of the oil-soluble PAMAM dendrimer, the oil-soluble PAMAM dendrimer is selected from one or more of PAMAM dendrimer from fifth generation to tenth generation, the element types of the metal atom clusters are selected from one or more of Au, Ag, Cu, Fe, Ni, Zn and Mo, the exciton Bohr radius of the quantum dots is larger than the diameter of the quantum dots, and the particle size of the metal atom clusters is 2-5 nm.
5. The method for preparing the quantum dot sensitized battery according to claim 4, wherein the preparation of the oil soluble PAMAM dendrimer comprises the steps of:
dissolving PAMAM dendrimer in a polar solvent, adding an end group modifier, and reacting an amino functional group on the PAMAM dendrimer with the end group modifier to convert the amino functional group into an oil-soluble group, thereby obtaining the oil-soluble PAMAM dendrimer.
6. The method for preparing the quantum dot sensitized battery according to claim 4, wherein the method for preparing the hybrid material comprises the steps of:
providing a composite material comprising an oil soluble PAMAM dendrimer and metal clusters bound within the PAMAM dendrimer cavity;
and (2) mixing the composite material with the quantum dots according to the mass ratio of 100:5-100 percent of the mixture is added into a nonpolar solvent to be mixed to prepare a colloidal solution, and the colloidal solution is dried to prepare the mixed material.
7. The method of claim 6, wherein the step of preparing a layer of quantum dot sensitizer material on the surface of the photoelectrode comprises: and depositing the colloidal solution on the surface of the photoelectrode, and carrying out annealing treatment to form a quantum dot sensitizer material layer.
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