CN107359264A - A kind of QLED, preparation method and display device - Google Patents
A kind of QLED, preparation method and display device Download PDFInfo
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- CN107359264A CN107359264A CN201710654996.1A CN201710654996A CN107359264A CN 107359264 A CN107359264 A CN 107359264A CN 201710654996 A CN201710654996 A CN 201710654996A CN 107359264 A CN107359264 A CN 107359264A
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- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract
This application provides a kind of QLED, preparation method and display device.Wherein, QLED includes substrate, anode, hole transmission layer, luminescent layer, electron transfer layer and negative electrode successively, and luminescent layer includes quantum dot and the dispersant with dendrimer structure, and quantum dot is dispersed between the side chain of dendrimer.Compared with the long-chain Ligand of quantum dot surface, the surface for the quantum dot being distributed in dendrimer structure will not form insulating barrier, and quantum dot surface impedance and hole and electronics can be greatly reduced to the electric charge injection barrier of quantum dot；In addition, between quantum dot molecule, it is spaced closer between quantum dot and electron transfer layer, hole transmission layer, so as to improve the concentration of quantum dot in luminescent layer, and the efficiency of exciton energy transfer.This QLED can be while quantum dot dispersiveness and quantum yield be ensured, the validity of enhancing carrier energy transfer, so as to strengthen the brightness of QLED luminous efficiency and QLED display devices.
Description
Technical field
The application is related to display technology field, more particularly to a kind of QLED, preparation method and display device.
Background technology
With the continuous development of television industries, high colour gamut display screen has turned into the main trend of television industries development, wherein,
With light emitting diode with quantum dots (QLED, English full name with electroluminescence characters：Quantum Dot Light Emitting
Diodes, light emitting diode with quantum dots) be technical foundation QLED display screens, in addition to the advantages of wide with colour gamut, also have
There is many advantages, such as high brightness, fast response time and more preferable HDR effects, be widely used prospect.
Fig. 1 is a kind of common QLED structural representation.As shown in figure 1, the flexible QLED display screens include base successively
Plate 10, anode layer 20, hole transmission layer 30, luminescent layer 40, electron transfer layer 50 and cathode layer 60.When in QLED display screens
When applying appropriate voltage between anode layer 20 and cathode layer 60, the hole of anode layer 20 and the electronics of cathode layer 60 will pass through respectively
Luminescent layer 40 is transferred to by hole transmission layer 30 and electron transfer layer 50, and exciton is combined into luminescent layer 40, is excited
Son can not be generally stabilized, and will be discharged in the form of luminous energy and heat energy.Quanta point material in luminescent layer 40 is by light
Or can send fluorescence after the stimulation of electricity, the wavelength of fluorescence can by quanta point material form and form determines, different wave length it is glimmering
Light color is different, and the image for needing to show can be produced after the fluorescence mixing for the different colours that quanta point material is sent.At present,
Due to many advantages, such as glow peak of quanta point material is narrow, glow color is adjustable and luminous efficiency is high, it has also become one kind display
Preferable luminescent material in device.
Fig. 2 is a kind of structural representation of common QLED luminescent layers 40.From Figure 2 it can be seen that it is distributed with luminescent layer 40 more
Individual quantum dot, there is the organic aliphatic acid part of one layer of long-chain in the Surface coating of quantum dot, the long-chain Ligand is advantageous to the amount of preventing
Agglomeration occurs between son point, so as to improve the dissolubility of quantum dot, dispersiveness and quantum yield.But the long-chain is matched somebody with somebody
The presence of body can also have a negative impact to QLED application, such as, long-chain Ligand can form organic exhausted on the surface of quantum dot
Edge layer, the conductive capability of quantum dot is reduced, increase hole and electronics to the electric charge injection barrier of quantum dot；Further, since long-chain
The presence of part so that quantum dot is at least quantum dot surface with the distance between electron transfer layer 50 and hole transmission layer 30
The length of upper long-chain Ligand, reduce electronics, hole and exciton energy transfer efficiency so that QLED luminescent properties by
Have a strong impact on.
The content of the invention
This application provides a kind of QLED, preparation method and display device, to solve the influence of the long-chain Ligand of quantum dot
The technical problem of QLED luminescent properties.
In a first aspect, this application provides a kind of QLED, the QLED to include substrate, anode, hole transmission layer, hair successively
Photosphere, electron transfer layer and negative electrode, wherein, the luminescent layer includes quantum dot and disperseed with dendrimer structure
Agent, the quantum dot are dispersed between the side chain of the dendrimer.
Second aspect, present invention also provides a kind of QLED preparation method, methods described includes：
Step 1：Spin coating hole transmission layer, luminescent layer and electron transfer layer successively in the ITO substrate of patterning, formed
Mixed layer sample, wherein, the luminescent layer includes quantum dot and the dispersant with dendrimer structure, the quantum dot point
It is dispersed between the side chain of the dendrimer；
Step 2：In the upper surface evaporation cathode of the mixed layer sample.
The third aspect, present invention also provides a kind of display device, the display device includes what first aspect provided
QLED。
The application's has the beneficial effect that：
This application provides a kind of QLED, preparation method and display device.The application provide QLED successively include substrate,
Anode, hole transmission layer, luminescent layer, electron transfer layer and negative electrode, wherein, the luminescent layer includes having dendrimer knot
The dispersant of structure, and the quantum dot being dispersed in the dispersant.Dendrimer structure has abducent side chain, amount
Son point can be uniformly distributed between the side chain of dendrimer.Compared with the long-chain Ligand of quantum dot surface, tree is distributed in
The surface of quantum dot in dendrimer structure will not form insulating barrier, and quantum dot surface impedance and hole can be greatly reduced
With the electric charge injection barrier of electronics to quantum dot；Further, since the barrier in the absence of long-chain Ligand so that quantum dot molecule it
Between, and it is spaced closer between quantum dot and electron transfer layer, hole transmission layer, so as to improve quantum dot in luminescent layer
Concentration, and the efficiency of exciton energy transfer.It can be seen that the QLED that the application provides can ensure quantum dot dispersiveness and quantum
While yield, the validity of enhancing carrier energy transfer, so as to strengthen QLED luminous efficiency and QLED display devices
Brightness.
Brief description of the drawings
In order to illustrate more clearly of the technical scheme of the application, letter will be made to the required accompanying drawing used in embodiment below
Singly introduce, it should be apparent that, for those of ordinary skills, without having to pay creative labor,
Other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of common QLED structural representation；
Fig. 2 is a kind of structural representation of common QLED luminescent layers；
Fig. 3 is a kind of structural representation for QLED that the embodiment of the present application one provides；
Fig. 4 is the partial enlarged drawing at I in Fig. 3；
Fig. 5 is a kind of method flow diagram of the preparation method for QLED that the embodiment of the present application two provides；
Fig. 6 is a kind of principle schematic for preparing QLED luminescent layers that the embodiment of the present application three provides.
Embodiment
Embodiment one
The embodiment of the present application one is directed in existing QLED luminescent layers, and the long-chain Ligand of quantum dot surface can influence QLED and light
A kind of the problem of performance, there is provided QLED.The structure that Fig. 3 and Fig. 4 is respectively a kind of QLED that the embodiment of the present application one provides is shown
Be intended to and Fig. 3 in partial enlarged drawing at I.From Fig. 3 and Fig. 4, the QLED includes substrate 100, anode 200, sky successively
Cave transmitting layer 3 00, luminescent layer 400, electron transfer layer 500 and negative electrode 600, wherein, the luminescent layer 300 include quantum dot and
Dispersant with dendrimer structure, the quantum dot are dispersed between the side chain of the dendrimer.
The present embodiment utilizes the dispersant quanta point material with dendrimer structure so that quantum dot uniformly divides
Cloth is between the side chain of dispersant dendrimer.Compared with the long-chain Ligand of quantum dot surface, dendrimer is distributed in
The surface of quantum dot in structure will not form insulating barrier, and quantum dot surface impedance and hole can be greatly reduced and electronics arrives
The electric charge injection barrier of quantum dot；In addition, by comparison diagram 2 and Fig. 4 it is seen that, because quantum dot is dispersed in the side of dispersant
Between chain so that between quantum dot molecule, and it is spaced closer between quantum dot and electron transfer layer, hole transmission layer, from
And the concentration of quantum dot in luminescent layer is improved, and the efficiency of exciton energy transfer.It can be seen that the system for the QLED that the application provides
Preparation Method can be while quantum dot dispersiveness and quantum yield be ensured, the validity of enhancing carrier energy transfer, so as to
Strengthen the brightness of QLED luminous efficiency and QLED display devices.
In the present embodiment, dispersant PAMAM.PAMAM has a dendrimer structure, between the side chain of dendrimer
The cavity for accommodating quantum dot can be formed, quantum dot is limited in independent cavity, is not susceptible to agglomeration.In addition,
PAMAM also has the advantages that outward appearance is regular, structure-controllable, and therefore, the present embodiment is disperseed from PAMAM as scattered quantum dot
Agent.In addition, in the application other embodiment, dispersant can also by quinolines dendrimer, aryl oxide class dendrimer,
A kind of composition in PAMAM dendrimers and ferrocenyl dendrimer.Following examples are only using PAMAM as scattered
Illustrated exemplified by agent, other kinds of dispersant is similar with PAMAM, no longer illustrates one by one here.
In addition, the application can use initiation core of the arbitrary long-chain diamine as home position polymerization reaction, unsaturated lipid
As addition agent.But the present embodiment consider quantum dot distribution uniformity, dispersiveness, and the film forming of luminescent layer and
Flatness requirement, trigger core as reaction in-situ from eight to octadecyl diamines；In view of the PAMAM rigidity of structure and macroscopic view
Compactness, from side chain addition agent of the beta-unsaturated esters as PAMAM for containing phenyl ring or naphthalene nucleus.
It is scattered in due to quantum dot between the side chain of the dendrimer of dispersant, if dispersant and amount in luminescent layer
The ratio of son point is excessive, then dispersant will excessively take the space of luminescent layer, the problem of quantum dot distribution density is relatively low occur,
QLED photoelectric transformation efficiency and illumination effect will be influenceed；If the ratio mistake of the dispersant and quantum dot in luminescent layer
Small, dispersant can not be completely dispersed quantum dot with possibly, cause multiple quantum dots to be reunited together, influence the scattered effect of quantum dot
Fruit, it can equally reduce QLED photoelectric transformation efficiency and illumination effect.Therefore, the present embodiment two aspect factors for more than
Consider, the mol ratio of dispersant and quantum dot is arranged to 1:(0.2-0.5), preferably 1：0.2.
Embodiment two
The embodiment of the present application two provides a kind of method for preparing the QLED described in embodiment one.Fig. 5 is implemented for the application
A kind of method flow diagram of the preparation method for QLED that example two provides.As seen from Figure 5, this method includes：
Step S201：Spin coating hole transmission layer, luminescent layer and electron transfer layer successively in the ITO substrate of patterning,
Mixed layer sample is formed, wherein, the luminescent layer includes quantum dot and the dispersant with dendrimer structure, the quantum
Point is dispersed between the side chain of the dendrimer.
Step S202：The evaporation cathode on the surface of the mixed layer sample.
In the present embodiment step S201, before spin coating hole transmission layer, the step of spin coating hole injection layer can also be included
Suddenly.
Embodiment three
The present embodiment provides a kind of QLED preparation method, and this method includes：
Step S301：CdSe/ZnSeS/ZnS quantum dots are prepared using hydro-thermal method.
CdSe/ZnSeS/ZnS quantum dots made from the present embodiment are three layers of nucleus-shell structure, and its kernel is ZnCdSe, outside
Shell is ZnS, and CdSe/ZnSeS/ZnS quantum dots have stronger optical stability.Its preparation method is as follows：It is 1 by mol ratio：4
Cadmium oxide mixed with amine oxide in argon gas atmosphere, be heated to 100 DEG C and be incubated 30min, be again heated to 220 DEG C and obtain
Cadmium oleate, and it is standby that cadmium oleate is cooled into room temperature；Under anaerobic, dissolve selenium in the tributyl phosphate of 5 times of quality, then
The octadecylene ODE of 5 times of quality is added, it is standby that selenium solution is made；Selenium solution is rapidly joined in cadmium oleate, is heated to 260 DEG C simultaneously
It is incubated 40min.By controlling soaking time (i.e. nanocrystalline growth time) that nanocrystalline granularity can be controlled, so as to controlled quentity controlled variable
Son point excitation wavelength.The shell thickness of this quantum dot is about 20 molecular sizes.Certainly, the quantum of the application other embodiment
Point can also be the other kinds of quantum dots such as CdSe/ZnS and CdSe/ZnSe.
Step S302：Prepare QLED luminescent layer.Comprise the following steps that：
Step S3021：0.1mol eight alkyl diamines are heated to 73 DEG C, make it all as molten state, in molten state
Eight alkyl diamines in add 0.095mol methyl acrylate, carry out Michael addition reaction, obtain 0.5 generation product.
The application can use initiation core of the arbitrary long-chain diamine as home position polymerization reaction, and unsaturated lipid, which is used as, to be added
Into agent.Uniformity, dispersiveness in view of quantum dot distribution, and the film forming and flatness requirement of luminescent layer, the application are real
Apply example and can be selected eight to octadecyl diamines as reaction in-situ initiation core.Meanwhile to ensure the luminous efficiency of luminescent layer, trigger
The chain length of core is also unsuitable long, and therefore, the present embodiment selects initiation core of eight alkyl diamines as home position polymerization reaction, eight alkyl
With the double bond of methyl acrylate addition reaction can occur for the amino in diamines, and two side chains are formed on core is triggered.In addition,
In the present embodiment, the addition of methyl acrylate should be slightly less than eight alkyl diamines, to avoid the amidation process subsequently carried out from giving birth to
Into impurity, the purity of dispersant is reduced, influences quantum dot luminous efficiency.
Step S3022：CdSe/ZnSeS/ZnS quantum dots made from step S101 are dissolved in chlorobenzene, by step
The addition compound product and the chlorobenzene solution of CdSe/ZnSeS/ZnS quantum dots that S3021 is obtained are 1 according to mol ratio:0.3 ratio is equal
Even mixing, obtains mixed liquor, and the alkyl diamines of 0.22mol eight are added in the mixed liquor, carries out amidation process, is dispersed in
CdSe/ZnSeS/ZnS quantum dots (daiamid-CdSe/ZnSeS/ZnS quantum dots) in daiamid, wherein, daiamid
For 1.0 generation products, CdSe/ZnSeS/ZnS quantum dots are distributed between the side chain of 1.0 generation products.Amino energy in eight alkyl diamines
Displacement reaction occurs for enough and ester group, so as to continue to increase the length of side base.
Step S3023：Methyl acrylate and eight alkyl two are sequentially added in the amidated products that step S3022 is obtained
Amine, addition reaction and amidation process are carried out respectively, obtains daiamid-CdSe/ZnSeS/ZnS quantum dots, wherein, polyamide
Amine is 2.0 generation products.
Step S3024：Step S3023 is repeated 6 times, i.e., by step S3023 iteration 6 times, obtained daiamid-
In CdSe/ZnSeS/ZnS quantum dots, daiamid is 7.0 generation products.
Step S3025：Appropriate second is added in the daiamid-CdSe/ZnSeS/ZnS quantum dots obtained to step S3024
Alcohol, concentration is obtained as 5 × 10-4The ethanol solution of mol/L daiamid-CdSe/ZnSeS/ZnS quantum dots, by the ethanol solution
Luminescent layer as QLED.
Fig. 6 is a kind of principle schematic for preparing QLED luminescent layers that the embodiment of the present application three provides.As seen from Figure 6, originally
Embodiment prepares PAMAM dispersants using divergent method.I.e. by the use of eight alkyl diamines as the initiation core of polymerisation, with this
Centered on core, outwards it is grafted by iterating addition reaction and amidation process, during iteration, is increased step by step
Number (i.e. surface functional group number) exponentially of long acting point increases, and ultimately forms the dendroid PAMAM of high algebraically.Quantum dot is equal
It is even to be distributed in inside dendritic PAMAM, there is stronger dispersiveness and quantum yield.Further, since between quantum dot away from
From and the distance between quantum dot and transport layer it is relatively near, be advantageous to strengthen the efficiency of carrier energy transfer, so as to strengthen
The brightness of QLED luminous efficiency and QLED display devices.In the present embodiment, between two adjacent side bases of the 7th generation product
Space is 4.4-8nm, and the space can only accommodate small number of quantum dot molecule, is advantageous to strengthen the dispersiveness of quantum dot.
Step S303：ITO (indium tin oxide, the English full name that will be patterned into：Indium tin oxide) substrate cleaning
Afterwards, spin coating hole injection layer at 3,000 rpm, after spin coating 30s, 15min is heat-treated under conditions of 150 DEG C.
Substrate, can be on substrate after the process meanses such as over cleaning, gluing, drying, exposure, development, etching, demoulding
Metal auxiliary electrode pattern, ITO pattern, insulating layer pattern and cathode insulated column pattern are formed, there are four partial patterns above
Substrate for patterning ITO substrate.In addition, the present embodiment selects PEDOT:PSS is as hole injection layer, PEDOT:PSS is
A kind of aqueous solution of high molecular polymer, the product are made up of two kinds of materials of PEDOT and PSS.PEDOT is EDOT (3,4- second
Support dioxythiophene monomers) polymer, PSS is poly styrene sulfonate.
Step S304：Substrate after heat treatment is transferred in the glove box under nitrogen environment, in the table of hole injection layer
Face spin coating hole transmission layer, spin speed 3000rpm.In the present embodiment, 1,2,4,5- tetra- (trifluoromethyl) benzene TFB can be selected
2% chlorobenzene solution as hole transmission layer.
Step S305：In the luminescent layer that the surface spin-coating step S3025 for the hole transmission layer that step S304 is obtained is obtained, its
In, spin speed 1000rpm, spin-coating time 20-30s, then spin coating there is the substrate of the luminescent layer vacuum at 50 DEG C do
Dry 3min.
Step S306：The surface spin coating electron transfer layer of luminescent layer after the drying, wherein, spin speed 3000rpm,
Spin-coating time is 20-30s, and then substrate that spin coating is had to electron transfer layer is dried in vacuo 10 minutes at 75-80 DEG C.This implementation
The ethanol solution for the ZnO that the optional concentration of example is 30mg/mL is as electron transfer layer.
Step S307：Above spin coating is had to the mixing of hole injection layer, hole transmission layer, luminescent layer and electron transfer layer
Layer sample be transferred in high vacuum settling chamber, in the upper surface of mixed layer sample in a manner of thermal evaporation evaporation cathode.This implementation
Negative electrode is Al negative electrodes in example.
In the embodiment of the present application, anode, hole injection layer, hole transmission layer, electron transfer layer and negative electrode preparation with
And selection is common technology, is not limited to the specific material that the present embodiment is provided.For example electron transfer layer can also use
Other materials such as Znq, Gaq, Bebq, Balq, DPVBi, ZnSPB, PBD, OXD, BBOT replace, and negative electrode can also use Cu, Au
Replaced Deng other common metal electrodes.
Example IV
The embodiment of the present application four provides another QLED preparation method.Compared with embodiment three, its difference
It is the preparation method of QLED luminescent layers.In the present embodiment, the preparation method of QLED luminescent layers comprises the following steps：
Step S4021：0.1mol ten alkyl diamines are heated to 80 DEG C, make it all as molten state, in molten state
Ten alkyl diamines in add 0.088mol 3- phenylpropen acid butyl esters, carry out Michael addition reaction.
The rigidity of structure and macroscopical compactness for PAMAM consider that the present embodiment selection 3- phenylpropen acid butyl esters etc. contain
There is addition agent of the unsaturated esters of phenyl ring or naphthalene ring as Michael addition reaction.
Step S4022：Quantum dot needed for the present embodiment luminescent layer is dissolved in chlorobenzene, step S4021 is obtained
The chlorobenzene solution of addition compound product and quantum dot is 1 according to mol ratio:0.5 ratio uniform mixing, obtains mixed liquor, in the mixing
0.22mol naphthylenediamines are added in liquid, carry out amidation process.
In the present embodiment, ethylenediamine, butanediamine can be selected, the diamine such as ethylenediamine and p-phenylenediamine and naphthylenediamine is carried out
Amidation process, the naphthylenediamine for containing more yuan of rings is selected herein as amidation process thing, to improve the knot of pamam dendrimer structure
Structure rigidity and macroscopical compactness.
Step S4023：3- phenylpropens acid butyl ester and naphthylenediamine are sequentially added in the product that step S4022 is obtained, point
Carry out not addition reaction and amidation process.
Step S4024：Step S4023 is repeated 4 times, i.e., by step S4023 iteration 4 times.
Step S4025：Add ethanol in proper amount in the daiamid-quantum dot obtained to step S4024, by daiamid-
Luminescent layer of the ethanol solution of quantum dot as QLED.
Embodiment five
The embodiment of the present application five provides another QLED preparation method.Compared with embodiment three and four, it is not
Same point is the preparation method of QLED luminescent layers.In the present embodiment, the preparation method of QLED luminescent layers comprises the following steps：
Step S5021：0.1mol ten alkyl diamines are heated to 80 DEG C, make it all as molten state, in molten state
Ten alkyl diamines in add 0.088mol 3- phenylpropen acid butyl esters, carry out Michael addition reaction.
Step S5022：Quantum dot needed for the present embodiment luminescent layer is dissolved in chlorobenzene, step S5021 is obtained
The chlorobenzene solution of addition compound product and quantum dot is 1 according to mol ratio:0.2 ratio uniform mixing, obtains mixed liquor, in the mixing
0.22mol naphthylenediamines are added in liquid, carry out amidation process.
Step S5023：3- phenylpropens acid butyl ester and naphthylenediamine are sequentially added in the product that step S5022 is obtained, point
Carry out not addition reaction and amidation process.
Step S5024：Step S5023 is repeated 5 times, i.e., by step S5023 iteration 5 times, naphthalene two is added in the 5th
Excessive monoamine is added in the product that amine obtains.
In the present embodiment, monoamine can be material only containing an amino of the carbon number within 12, such as methylamine, second
Amine, propylamine and lauryl amine.With the increase of iteration reaction times, reaction, the present embodiment can be crosslinked between PAMAM side chains
Using monoamine terminating reaction process, by controlling the extent of reaction of PAMAM side bases, to control the space that side base is formed, this implementation
In example, space is within 8nm between the two neighboring side bases of PAMAM.
Step S5025：Add ethanol in proper amount in the daiamid-quantum dot obtained to step S5024, by daiamid-
Luminescent layer of the ethanol solution of quantum dot as QLED.
Brightness of the application respectively to comparative sample and laboratory sample 1-3 is tested, wherein, 1-3 points of laboratory sample
Wei not the QLED samples as made from the preparation method that embodiment one to three provides；Comparative sample and laboratory sample 1-3 difference are only
The luminescent layer for being comparative sample is the quantum dot with octadecylamine part.
Method of testing：The application utilizes the fully integrated imaging CCD spectroscopes measurement control samples of IN-SPECTRUMTM 0.150m
The excitation spectrum intensity of product and laboratory sample 1-3 under identical voltage (9V).
Test result：The brightness of the comparative sample measured by above method of testing is 212cd/m2, and laboratory sample 1-3's is bright
Degree is followed successively by 275cd/m2,319cd/m2 and 301cd/m2.From above test result, QLED samples made from the present embodiment
Luminescent properties be superior to comparative sample, illustrate using with tree structure dispersant quantum dot and utilize long-chain Ligand
Scattered quantum dot compares, and is more beneficial for improving the luminescent properties of QLED products.
Embodiment six
The embodiment of the present application six additionally provides a kind of display device, and the display device includes the offer of embodiment one
QLED。
In this specification between each embodiment identical similar part mutually referring to.Especially for embodiment three
For five, because it is substantially similar to embodiment of the method, so description is fairly simple, related part is referring to embodiment of the method
In explanation.Invention described above embodiment is not intended to limit the scope of the present invention..
Claims (10)
1. a kind of QLED, it is characterised in that the QLED includes substrate, anode, hole transmission layer, luminescent layer, electronics and passed successively
Defeated layer and negative electrode, wherein, the luminescent layer includes quantum dot and the dispersant with dendrimer structure, the quantum dot
It is dispersed between the side chain of the dendrimer.
2. QLED according to claim 1, it is characterised in that the dispersant is by quinolines dendrimer, aryl oxide class
A kind of molecule in dendrimer and PAMAM dendrimers is formed.
3. QLED according to claim 1, it is characterised in that the dispersant is PAMAM, the initiation core of the PAMAM
For eight to octadecyl diamines.
4. QLED according to claim 3, it is characterised in that the side chain addition agent of the PAMAM be containing phenyl ring or
The beta-unsaturated esters of naphthalene nucleus.
5. QLED according to claim 1, it is characterised in that the mol ratio of the dispersant and the quantum dot is 1:
(0.2-0.5)。
6. a kind of QLED preparation method, it is characterised in that methods described includes：
Step 1：Spin coating hole transmission layer, luminescent layer and electron transfer layer, formation mix successively in the ITO substrate of patterning
Layer sample, wherein, the luminescent layer includes quantum dot and the dispersant with dendrimer structure, and the quantum dot is dispersed in
Between the side chain of the dendrimer；
Step 2：In the upper surface evaporation cathode of the mixed layer sample.
7. QLED according to claim 6 preparation method, it is characterised in that the preparation method of the luminescent layer includes：
Step 11：Unsaturated lipid is added in the binary chain alkyl amine of molten state and carries out addition reaction；
Step 12：The addition compound product that step 11 obtains uniformly is mixed with quantum dot solution, mixed liquor is obtained, in the mixed liquor
Middle addition diamine, carry out amidation process；
Step 13：Unsaturated lipid and diamine are sequentially added in the amidated products that step 12 obtains, it is anti-to carry out addition respectively
Should and amidation process；
Step 14：Step 13 is repeated 4-6 times.
8. QLED according to claim 7 preparation method, it is characterised in that the step 13 also includes：At last
Excessive monoamine is added in the secondary product for adding diamine and obtaining.
9. QLED according to claim 7 preparation method, it is characterised in that the diamine is the binary containing naphthalene nucleus
Amine.
10. a kind of display device, it is characterised in that the display device includes the QLED as described in claim 1-5.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| WO2020108079A1 (en) * | 2018-11-28 | 2020-06-04 | Tcl科技集团股份有限公司 | Method for preparing quantum dot |
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