CN111239470A - Method for monitoring current of IGBT module integrated shunt in real time - Google Patents

Method for monitoring current of IGBT module integrated shunt in real time Download PDF

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Publication number
CN111239470A
CN111239470A CN201911382099.5A CN201911382099A CN111239470A CN 111239470 A CN111239470 A CN 111239470A CN 201911382099 A CN201911382099 A CN 201911382099A CN 111239470 A CN111239470 A CN 111239470A
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China
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current
igbt module
shunt
monitoring
max
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CN201911382099.5A
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Inventor
孟昭亮
董志伟
高勇
杨媛
由梦雪
吕亚茹
王好贞
艾胜胜
方正鹏
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Xian Polytechnic University
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Xian Polytechnic University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values

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  • General Physics & Mathematics (AREA)
  • Power Conversion In General (AREA)
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Abstract

The invention discloses a method for monitoring current of an IGBT module integrated shunt in real time, which comprises the steps of collecting voltage signals on the shunt through a detection circuit on a driver, and calculating current I of the IGBT module at the current momentjWith a set current ImaxAnd comparing to perform overcurrent protection. The IGBT module current monitoring method can accurately obtain the running real-time current of the IGBT module, and can carry out current detection without blind areas in experiments, thereby realizing more accurate overcurrent protection and real-time current monitoring functions of the IGBT module and ensuring that equipment with the IGBT module can run safely and stably.

Description

Method for monitoring current of IGBT module integrated shunt in real time
Technical Field
The invention belongs to the technical field of IGBT module signal measurement, and particularly relates to a method for monitoring current of an IGBT module integrated shunt in real time.
Background
The IGBT module is a semiconductor module formed by packaging an insulated gate bipolar transistor and a freewheeling diode, and is used in the aspects of electric welding machines, electroplating power supplies, industrial heating, induction cookers, variable frequency air conditioners, variable frequency refrigerators, wind power generation, electric vehicles and the like; the current of the IGBT module is an important parameter for the operation of the whole module, and the real-time monitoring of the current can realize important measures for monitoring the working state of the IGBT module and controlling data acquisition, and is related to the normal operation of equipment. There are two main methods for measuring the current of the IGBT, one is a non-magnetic measuring current, and the other is a magnetic measuring current. The current measurement of the IGBT module usually adopts a Hall current sensor to directly detect the current Ic of the IGBT, then the current Ic is compared with a set threshold value, and the output of a comparator is used for controlling the turn-off of a driving signal.
Disclosure of Invention
The invention aims to solve the technical problem of providing a method for monitoring the current of an IGBT module integrated shunt in real time, and realizing no-dead-zone monitoring of the current of the IGBT module.
The technical scheme adopted by the invention is that the method for monitoring the current of the IGBT module integrated shunt in real time comprises the steps that the IGBT module comprises two bridged insulated gate bipolar transistors and two shunts, and an emitting electrode of each insulated gate bipolar transistor is connected with one shunt in series. The method for monitoring the current of the IGBT module in real time comprises the following steps:
step 1, integrating a shunt on an emitting electrode of an IGBT module;
step 2, adding a signal acquisition circuit into the driving circuit, and acquiring voltage signals at two ends of the shunt in the step 1;
and 3, according to the voltage signal read in the step 2, calculating a voltage signal according to an ohm law: the current flowing at the moment can be directly obtained;
step 4, current I at the current moment is measuredjWith a set current ImaxMaking a comparison at a current IjHigher than a set value ImaxOver-current protection is performed in time, ImaxThe maximum current allowed by the IGBT module in normal work;
in the step 1, the adopted shunt carries out model selection according to the rated parameters of the IGBT module; for an IGBT module with a rated voltage, current parameter of 1700V, 50A, a shunt with a power of 3W at 0.5m Ω was selected.
In step 3, no dead zone detection can be performed on the current in the experiment process.
In step 4, the working state of the IGBT at the moment can be rapidly judged according to the magnitude of the real-time current, and whether overcurrent protection is needed or not can be rapidly judged.
The specific method of the step 3 comprises the following steps:
step 3.1, converting the analog quantity of the voltage in the step 2 into a digital signal;
and 3.2, comparing the voltage value in the step 3.1 with the nominal value of the current divider by using ohm's law to obtain the current value at the moment.
The specific process of step 1.2 is to transmit the digital signal of step 3.1 to the controller receiving unit and to transmit the current I at the current momentjWith a set current ImaxMaking a comparison at a current IjHigher than a set value ImaxOver-current protection is performed in time, ImaxThe maximum current allowed by the IGBT module in normal operation. The controller is arranged in the driving circuit, and voltage signals at two ends of the shunt send digital quantity to the controller after passing through the detection circuit, the analog-to-digital conversion circuit and the isolation circuit. The comparison process is performed in the controller.
The invention has the advantages that the shunt is integrated on the emitter of the IGBT module, so that the real-time current during the operation of the IGBT is monitored, and the current detection without a blind area is carried out in the experiment. The working state of the IGBT can be clearly reflected, and the driving circuit can be timely reflected to protect the IGBT module once overload or short circuit occurs. Meanwhile, the use degree of the IGBT module can be judged according to the current state when the IGBT works, and a new IGBT module can be replaced in time to ensure the normal operation of the IGBT module equipment.
Drawings
Fig. 1 is an internally integrated shunt diagram of an IGBT module in the invention;
fig. 2 is a schematic diagram of a half-bridge circuit topology of an IGBT module according to the present invention.
In the figure, 1, IGBT, 2, freewheeling diode, 3, thermistor outgoing line, 4, upper half-bridge G pole outgoing line, 5, upper half-bridge E pole outgoing line, 6, upper half-bridge integrated shunt, 7, lower half-bridge G pole outgoing line, 8, lower half-bridge E pole outgoing line, 9, lower half-bridge integrated shunt and 10, C pole outgoing line.
Detailed Description
The present invention will be described in further detail with reference to the drawings and the embodiments, but the present invention is not limited to the embodiments.
A method for monitoring current in real time by integrating current dividers into an IGBT module is disclosed, wherein R1 and R2 are two current dividers integrated into a tube and a tube in a half-bridge topology respectively, and VD1 and VD2 are two freewheeling diodes. The acquisition circuit converts the voltage signal on the shunt and sends the voltage signal to the control unit of the drive circuit to be compared with the set maximum working current, and when the current is higher than the set value ImaxOver-current protection is performed in time, ImaxThe maximum current allowed by the IGBT module in normal work;
a method for monitoring current in real time by integrating a shunt in an IGBT module is disclosed, as shown in figure 1, the IGBT module comprises two insulated gate bipolar transistors and two shunts which are bridged, and an emitter of each insulated gate bipolar transistor is connected with one shunt in series. The method for monitoring the current of the IGBT module in real time comprises the following steps:
step 1, integrating a shunt on an emitting electrode of an IGBT module;
step 2, adding a signal acquisition circuit into the driving circuit, and acquiring voltage signals at two ends of the shunt in the step 1;
and 3, according to the voltage signal read in the step 2, calculating a voltage signal according to an ohm law: the current flowing at the moment can be directly obtained;
step 4, current I at the current moment is measuredjWith a set current ImaxMaking a comparison at a current IjHigher than a set value ImaxOver-current protection is performed in time, ImaxThe maximum current allowed by the IGBT module in normal work;
in the step 1, the adopted shunt carries out model selection according to the rated parameters of the IGBT module; for an IGBT module with a rated voltage, current parameter of 1700V, 50A, a shunt with a power of 3W at 0.5m Ω was selected.
In step 3, no dead zone detection can be performed on the current in the experiment process.
In step 4, the working state of the IGBT at the moment can be rapidly judged according to the magnitude of the real-time current, and whether overcurrent protection is needed or not can be rapidly judged.
The specific method of the step 3 comprises the following steps:
step 3.1, converting the analog quantity of the voltage in the step 2 into a digital signal;
and 3.2, comparing the voltage value in the step 3.1 with the nominal value of the current divider by using ohm's law to obtain the current value at the moment.
The specific process of step 3.2 is to transmit the digital signal of step 3.1 to the controller receiving unit and to transmit the current I at the current momentjWith a set current ImaxMaking a comparison at a current IjHigher than a set value ImaxOver-current protection is performed in time, ImaxThe maximum current allowed by the IGBT module in normal operation. The controller is arranged in the driving circuit, and voltage signals at two ends of the shunt send digital quantity to the controller after passing through the detection circuit, the analog-to-digital conversion circuit and the isolation circuit. The comparison process is performed in the controller.
In the figure 1, IGBT, 2, freewheeling diode, 3, thermistor outgoing line, 4, upper half-bridge G pole outgoing line, 5, upper half-bridge E pole outgoing line, 6, upper half-bridge integrated shunt, 7, lower half-bridge G pole outgoing line, 8, lower half-bridge E pole outgoing line, 9, lower half-bridge integrated shunt and 10, C pole outgoing line.
Fig. 2 is a schematic diagram of a half-bridge circuit topology of the IGBT module according to the present invention.
The IGBT1 is connected in parallel with the freewheel diode 2, the shunt 6 is connected in series with the E-pole of the IGBT, and the lead-out wire is used for connection with an external device. The current I flowing through the IGBT is obtained by acquiring the voltage of a shunt connected in series with the E pole of the IGBT and calculating the ohm lawCAnd the non-dead-zone monitoring of the current flowing through the IGBT is realized.
Examples
The IGBT module integrated shunt realizes the function of real-time current monitoring of the IGBT module, and specifically comprises the following steps:
step 1, the shunt is subjected to model selection, the shunt is integrated into an emitting electrode of the IGBT, and the thermal conductivity is improved compared with that of the shunt integrated into an IGBT module and installed on a PCB;
step 2, collecting voltage signals at two ends of the current divider through a detection circuit;
step 3, after the voltage signal acquired in the step 2 is subjected to digital-to-analog conversion, calculating the current value at the moment according to the ohm law;
and 4, sending the current value obtained in the step 3 into a controller, and judging whether the current accords with the current of the IGBT in normal operation by the controller, so that the real-time monitoring effect is achieved.

Claims (6)

1. A method for monitoring current of an IGBT module integrated shunt in real time is characterized in that the IGBT module comprises two bridged insulated gate bipolar transistors and two shunts, an emitter of each insulated gate bipolar transistor is connected with one shunt in series, and the method for monitoring the current of the IGBT module in real time comprises the following steps:
step 1, integrating a shunt on an emitting electrode of an IGBT module;
step 2, adding a signal acquisition circuit into the driving circuit, and acquiring voltage signals at two ends of the shunt in the step 1;
and 3, according to the voltage signal read in the step 2, calculating a voltage signal according to an ohm law: the current flowing at the moment can be directly obtained;
step 4, current I at the current moment is measuredjWith a set current ImaxMaking a comparison at a current IjHigher than a set value ImaxOver-current protection is performed in time, ImaxThe maximum current allowed by the IGBT module in normal operation.
2. The method for monitoring the current of the IGBT module integrated shunt in real time according to claim 1, wherein in the step 1, the adopted shunt is subjected to model selection according to the magnitude of rated parameters of the IGBT module; for an IGBT module with a rated voltage, current parameter of 1700V, 50A, a shunt with a power of 3W at 0.5m Ω was selected.
3. The method for monitoring the current of the IGBT module integrated shunt according to claim 1, wherein in the step 3, no dead zone detection can be performed on the current during the experiment.
4. The method for monitoring the current of the IGBT module integrated shunt according to claim 1, wherein in the step 4, the working state of the IGBT at the moment can be rapidly judged according to the magnitude of the real-time current, and whether overcurrent protection is needed or not is judged.
5. The method for monitoring the current of the IGBT module integrated shunt according to claim 1, wherein the specific method of the step 3 comprises:
step 3.1, converting the analog quantity of the voltage in the step 2 into a digital signal;
and 3.2, comparing the voltage value in the step 3.1 with the nominal value of the current divider by using ohm's law to obtain the current value at the moment.
6. The method for monitoring the current of the IGBT module integrated shunt in real time as claimed in claim 2, wherein the specific process of step 3.2 is to transmit the digital signal of step 3.1 to the controller receiving unit, and to transmit the current I at the present momentjWith a set current ImaxMaking a comparison at a current IjHigher than a set value ImaxWhen the current is over-current protected,Imaxthe maximum current allowed by the IGBT module in normal operation.
CN201911382099.5A 2019-12-27 2019-12-27 Method for monitoring current of IGBT module integrated shunt in real time Pending CN111239470A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104149A (en) * 1997-02-28 2000-08-15 International Rectifier Corp. Circuit and method for improving short-circuit capability of IGBTs
CN101860252A (en) * 2010-04-28 2010-10-13 清华大学 Three-level converter for optimizing device overcurrent protection and enlarging system safety operation area
CN103607102A (en) * 2013-12-04 2014-02-26 西安永电电气有限责任公司 IGBT (Insulated Gate Bipolar Transistor) module and control method thereof
CN103973277A (en) * 2013-02-05 2014-08-06 通用电气公司 Short circuit protection circuit and method for insulated gate bipolar transistor
CN204376747U (en) * 2015-02-25 2015-06-03 北京天诚同创电气有限公司 Many brachium pontis IGBT Current Feedback Control Circuit in parallel
CN107817379A (en) * 2016-09-13 2018-03-20 上海儒竞自动控制系统有限公司 A kind of boost inductor current detecting system of rectifier

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104149A (en) * 1997-02-28 2000-08-15 International Rectifier Corp. Circuit and method for improving short-circuit capability of IGBTs
CN101860252A (en) * 2010-04-28 2010-10-13 清华大学 Three-level converter for optimizing device overcurrent protection and enlarging system safety operation area
CN103973277A (en) * 2013-02-05 2014-08-06 通用电气公司 Short circuit protection circuit and method for insulated gate bipolar transistor
CN103607102A (en) * 2013-12-04 2014-02-26 西安永电电气有限责任公司 IGBT (Insulated Gate Bipolar Transistor) module and control method thereof
CN204376747U (en) * 2015-02-25 2015-06-03 北京天诚同创电气有限公司 Many brachium pontis IGBT Current Feedback Control Circuit in parallel
CN107817379A (en) * 2016-09-13 2018-03-20 上海儒竞自动控制系统有限公司 A kind of boost inductor current detecting system of rectifier

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
INFINEON-AUTOECO.COM: "IGBT集成的额外功能应用", 《英飞凌汽车电子生态圈》 *

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Application publication date: 20200605