CN111224317B - Laser emitting device - Google Patents

Laser emitting device Download PDF

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Publication number
CN111224317B
CN111224317B CN202010313880.3A CN202010313880A CN111224317B CN 111224317 B CN111224317 B CN 111224317B CN 202010313880 A CN202010313880 A CN 202010313880A CN 111224317 B CN111224317 B CN 111224317B
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laser
laser transmitter
circuit board
energy storage
storage module
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CN111224317A (en
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林玉波
杜灿鸿
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Shenzhen Goodix Technology Co Ltd
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Shenzhen Goodix Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor

Abstract

The embodiment of the present application provides a laser emission device, this laser emission device includes: the laser device comprises a driving assembly, a laser transmitter, an energy storage module and a circuit board; the driving assembly is electrically connected with the laser transmitter, the laser transmitter is electrically connected with the energy storage module, the energy storage module is electrically connected with an external power supply, and the driving assembly, the energy storage module and the external power supply are used for generating electric signals required by driving the laser transmitter; the driving assembly, the laser emitter and the energy storage module are fixed above the circuit board, and a grounding layer is arranged in the circuit board; the distance between the lower surface of the laser emitter and the ground plane of the circuit board is less than or equal to 0.1 mm. The laser transmitter improves the change rate of current, further improves the peak power of laser emission, and enhances the anti-interference capability of laser emission.

Description

Laser emitting device
Technical Field
The embodiment of the application relates to the technical field of photoelectricity, in particular to a laser emitting device.
Background
The laser emitting device can emit a laser signal under the control of the driving signal. For example, in one application scenario, a drive signal control circuit is used to generate a transient current, so that a laser emitting device emits laser light. However, because the circuit element itself has parasitic inductance in the circuit structure of the laser emitting device, when the laser emitting device is controlled by the driving signal, the change of the instantaneous current is slow due to the influence of the parasitic inductance, thereby influencing the laser emitting effect of the laser emitting device.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a laser emitting device, so as to overcome the defect in the prior art that the laser emitting device has an effect of emitting laser light due to slow change of instantaneous current caused by parasitic inductance in the circuit.
The embodiment of the application provides a laser emission device, it includes: the laser device comprises a driving assembly, a laser transmitter, an energy storage module and a circuit board;
the driving assembly is electrically connected with the laser transmitter, the laser transmitter is electrically connected with the energy storage module, the energy storage module is electrically connected with an external power supply, and the driving assembly, the energy storage module and the external power supply are used for generating electric signals required by driving the laser transmitter;
the driving assembly, the laser emitter and the energy storage module are fixed above the circuit board, and a grounding layer is arranged in the circuit board;
the distance between the lower surface of the laser emitter and the ground plane of the circuit board is less than or equal to 0.1 mm.
Optionally, in an embodiment of the present application, the circuit board includes a routing layer, an intermediate dielectric layer and a ground layer, the intermediate dielectric layer is located between the routing layer and the ground layer, and the thickness of the intermediate dielectric layer is between 12.5 microns and 50 microns.
Optionally, in one embodiment of the present application, the laser transmitter is a bare wafer laser transmitter.
Optionally, in one embodiment of the present application, a distance between a lower surface of the laser emitter and an upper surface of the circuit board is less than or equal to 30 microns.
Optionally, in an embodiment of the present application, a first ground hole and a second ground hole are disposed on the circuit board;
the first grounding hole is arranged below the driving assembly, and the driving assembly is grounded through the first grounding hole;
the second grounding hole is formed below the energy storage module, and the energy storage module is grounded through the second grounding hole.
Optionally, in an embodiment of the present application, the laser emitter is fixed to the upper surface of the circuit board by at least one anode connection line, and the cathode of the laser emitter is disposed on the lower surface of the laser emitter.
Optionally, in an embodiment of the present application, a nickel-palladium-gold layer is disposed between the laser emitter and the circuit board, and the at least one anode connection line is bonded to the nickel-palladium-gold layer.
Optionally, in an embodiment of the present application, the cathode of the laser emitter is fixed to the upper surface of the circuit board by silver paste.
Optionally, in an embodiment of the present application, the laser emitting device further includes a reinforcing plate, and the reinforcing plate is fixed to the lower surface of the circuit board.
Optionally, in an embodiment of the present application, a first end of the energy storage module is electrically connected to an input end of the laser emitter, and a second end of the energy storage module is grounded;
the output end of the laser transmitter is electrically connected with the first input end of the driving assembly;
the second input end of the driving component is connected with the pulse signal, and the output end of the driving component is grounded.
Optionally, in an embodiment of the present application, the driving assembly includes a waveform shaping circuit and a switching unit;
the input end of the waveform shaping circuit is connected with a pulse signal, and the output end of the waveform shaping circuit is connected with the control end of the switch unit;
the input end of the switch unit is electrically connected with the output end of the laser transmitter, and the output end of the switch unit is grounded.
Optionally, in an embodiment of the present application, the switching unit is a field effect transistor;
the drain electrode of the field effect tube is electrically connected with the output end of the laser emitter, the grid electrode of the field effect tube is electrically connected with the output end of the waveform shaping circuit, and the source electrode of the field effect tube is grounded.
The laser emission device that this application embodiment provided, through reducing the thickness of circuit board among the laser emission device for each circuit element reduces to the distance of ground layer, thereby the local mutual inductance of power and ground has been increased, the parasitic inductance that the circuit produced among the laser emission device has been reduced promptly, thereby the instantaneous current change that produces when making drive signal control laser emission device accelerates, the interference killing feature of laser emission has been improved, the effect of transmitting laser has been increased.
Drawings
Some specific embodiments of the present application will be described in detail hereinafter by way of illustration and not limitation with reference to the accompanying drawings. The same reference numbers in the drawings identify the same or similar elements or components. Those skilled in the art will appreciate that the drawings are not necessarily drawn to scale. In the drawings:
fig. 1 is a schematic circuit diagram of a laser emitting circuit in a laser emitting device according to various embodiments of the present disclosure;
fig. 2 is a cross-sectional view of a laser emitting device according to an embodiment of the present application;
fig. 3 is a cross-sectional view of a laser emitting device according to a second embodiment of the present application;
fig. 3a is a schematic view of a connection line according to a second embodiment of the present disclosure;
fig. 3b is a cross-sectional view of a circuit board according to the second embodiment of the present application;
fig. 4 is a cross-sectional view of a laser emitting device according to a second embodiment of the present application;
fig. 5 is a cross-sectional view of a laser emitting device according to a second embodiment of the present application;
fig. 6 is a cross-sectional view of a laser emitting device according to a second embodiment of the present application;
FIG. 7 is a schematic illustration of a fixing effect of a laser transmitter according to various embodiments of the present disclosure;
fig. 8 is a schematic circuit diagram of a laser emitting device according to various embodiments of the present disclosure;
fig. 9 is a cross-sectional view of a laser emitting device according to a third embodiment of the present application.
Detailed Description
The following further describes specific implementation of the embodiments of the present invention with reference to the drawings.
Before describing the embodiments, the principle of the laser emitting circuit included in the laser emitting device provided in the embodiments of the present application will be explained. Fig. 1 is a schematic circuit diagram of a laser emitting circuit in a laser emitting device according to various embodiments of the present disclosure; fig. 1 shows a laser transmitter circuit 10, which includes a driver chip 101, a laser transmitter chip 102, and a capacitor 103;
the driving chip 101 comprises a Schmitt trigger 1011 and a MOS tube 1012, wherein the input end of the Schmitt trigger 1011 is connected with a pulse signal, and the output end of the Schmitt trigger 1011 is connected with the gate of the MOS tube 1012;
the drain electrode of the MOS tube 1012 is connected with the output end of the laser emitting chip 102, and the source electrode of the MOS tube 1012 is grounded;
one end of the capacitor 103 is connected to the input end of the laser emitting chip 102 and the positive electrode of the external power source 11, and the other end of the capacitor 103 is grounded.
In fig. 1, a pulse signal is input to an input terminal of the schmitt trigger 1011, and the schmitt trigger 1011 performs waveform shaping on the pulse signal and then outputs the pulse signal to a gate of the MOS transistor 1012 to control on and off of the MOS transistor 1012. When the MOS transistor 1012 is turned off, the external power supply 11 charges the capacitor 103, and when the MOS transistor is turned on, the capacitor 103 discharges to the laser emitting chip 102, and the laser emitting chip 102 emits laser light under the action of instantaneous current.
Illustratively, the schmitt trigger 1011 performs waveform shaping on an input pulse signal, when the pulse signal subjected to the waveform shaping is input to the gate of the MOS transistor 1012, if the pulse signal is at a high level, the MOS transistor 1012 is turned on, at this time, the capacitor 103 discharges to the laser emitting chip 102, and specifically, the capacitor 103 generates an instantaneous current to flow to the laser emitting chip 102, so that the laser emitting chip 102 emits laser under the action of the instantaneous current.
It should be noted that, because the pulse signal is high for a period of time in one period, the current generated by the capacitor 103 is also only the instantaneous current for a period of time. Because the inductor has the property of blocking the change of the high-frequency current, when the instantaneous current flows to the laser emitting chip 102, because the parasitic inductor 104 inside the laser emitting circuit is relatively large, the current change in the circuit becomes slow, that is, the change rate of the current input to the laser emitting chip is reduced, the rise time of the current input to the laser emitting chip is prolonged, even the current input to the laser emitting chip 102 does not rise to the maximum value, the narrow pulse signal input to the gate of the MOS transistor is already changed from the high level to the low level, so that the MOS transistor 1012 is turned off to turn off the laser emission, the desired peak current cannot be reached, and the peak current is positively correlated with the peak optical power, which causes the peak power of the laser emitted by the laser emitting chip 102 to be reduced, and the laser emitting chip is easily influenced by the ambient light and has reduced anti. It should be noted that the parasitic inductance 104 shown in fig. 1 is generated by equivalently representing the inductance property of the whole circuit because the circuit element itself has the inductance property, and the parasitic inductance 104 is not an actual element and is only illustrated for explaining the circuit principle. It should be noted that the parasitic inductance 104 is mainly generated due to inductance properties of connection lines between circuit elements and inductance properties of a ground terminal in a circuit, and certainly, the circuit elements may also exhibit inductance properties to a certain extent.
To further illustrate the characteristics of the parasitic inductance, the relationship between the current and the voltage of the parasitic inductance is illustrated, and the voltage V of the parasitic inductance is calculated according to formula one:
Figure 256527DEST_PATH_IMAGE001
formula one;
where V represents the voltage across parasitic inductance 104, L represents the inductance value of parasitic inductance 104,
Figure DEST_PATH_IMAGE002
representing the rate of change of the instantaneous current. In conjunction with the circuit structure shown in fig. 1, the transient current flows from the capacitor 103 through the parasitic inductor 104, then through the laser emitting chip 102, and finally through the MOS transistor 1012 to the ground. In this circuit configuration, the voltage V across the parasitic inductor 104 is regarded as being substantially constant when the instantaneous current flows, and therefore, the inductance L of the parasitic inductor is reduced, so that the rate of change of the instantaneous current is increased
Figure 609886DEST_PATH_IMAGE002
。
The first embodiment,
Based on the Circuit principle analysis of the laser emitting Circuit, a structure diagram of a laser emitting device according to an embodiment of the present application is provided, as shown in fig. 2, fig. 2 is a cross-sectional view of the laser emitting device according to the embodiment of the present application, and the laser emitting device 20 includes a laser emitting Circuit 10, a Printed Circuit Board (PCB) 201 and a substrate 202, where the laser emitting Circuit 10 is fixed on an upper surface of the PCB 201.
The laser emitting circuit 10 includes a laser emitting chip 102, a driving chip 101, and a capacitor 103. The laser emitting chip 102 is fixed on the base material 202, and the base material 202, the driving chip 101 and the capacitor 103 are all fixed on the upper surface of the PCB 201. The laser emitting chip 102, the driving chip 101, and the capacitor 103 may be respectively equivalent to the same-numbered circuit elements in fig. 1.
It should be noted that the substrate 202 may be made of an insulating material such as ceramic, which is only exemplary and not meant to limit the present application, and the substrate 202 is used for packaging the laser emitting chip 102, and the laser emitting chip 102 is fixed on the upper surface of the substrate 202.
The PCB201 is provided with a ground terminal, as shown in fig. 2, the PCB201 is provided with two ground holes, namely a first ground hole 2031 and a second ground hole 2032, the first ground hole 2031 is disposed below the driver chip 101, the driver chip 101 is connected to the ground terminal through the first ground hole 2031, and similarly, the second ground hole 2032 is disposed below the capacitor 103, and the capacitor 103 is connected to the ground terminal through the second ground hole 2032. The driving chip 101 and the capacitor 103 are respectively connected to the laser emitting chip 102, alternatively, the driving chip 101 may be connected between the output terminal of the laser emitting chip 102 and the ground terminal, and the capacitor 103 may be connected between the input terminal of the laser emitting chip 102 and the ground terminal. When the laser emitting chip 102 operates, a current flows in from an input terminal of the laser emitting chip 102 and flows out from an output terminal of the laser emitting chip 102. In an optional application scenario, the laser emitting chip 102 may include at least one laser diode, the at least one laser diode may be connected in parallel or in series, an anode of the laser diode is an input end of the laser emitting chip 102, a cathode of the laser diode is an output end of the laser emitting chip 102, and a current flows from the anode of the laser diode to the cathode of the laser diode.
In the laser transmitter 20, the parasitic inductance of the whole circuit includes the local self-inductance of the power supply, the local self-inductance of the ground, and the local mutual inductance of the power supply and the ground, as shown in the formula two:
Figure 655202DEST_PATH_IMAGE003
a formula two;
wherein the content of the first and second substances,L loop representing the parasitic inductance of the overall circuit,L loop may be equivalent to the inductance of inductor 104 in figure 1,L a a local self-inductance of the power supply is indicated,L b the local self-inductance of the ground is represented,L ab representing a local mutual inductance of the power supply and ground. It should be noted that the local self-inductance of the power supply is formed by the inductance property exhibited by the connection lines between the circuit elements, the local self-inductance of the ground is formed by the inductance property exhibited by the ground terminals of the circuit elements, and the local mutual inductance of the power supply and the ground is generated by the mutual influence of the leftward current in the connection lines on the PCB201 and the rightward current in the ground terminals of the PCB 201. In the present application, the mutual induction phenomenon may be understood as a phenomenon in which when a current in one wire changes, an induced electromotive force is generated in another wire adjacent thereto.
Therefore, the parasitic inductance of the entire circuit can be reduced by reducing the local self-inductance of the power supply, reducing the local self-inductance of the ground, and increasing the local mutual inductance of the power supply and the ground. Specifically, the inductance of the connecting wire can be reduced by reducing the length of the connecting wire and increasing the width of the connecting wire, that is, the local self-inductance of the power supply can be reduced by reducing the length of the connecting wire and increasing the width of the connecting wire; reducing the length of the ground terminal and increasing the width of the ground terminal can reduce the local self-inductance of the ground. Additionally, decreasing the distance between two wires may increase the mutual inductance between the two wires, and increasing the distance between two wires may decrease the mutual inductance between the two wires.
Example II,
With reference to the first embodiment, a second embodiment of the present application provides a laser emitting device, as shown in fig. 3, fig. 3 is a cross-sectional view of the laser emitting device provided in the second embodiment of the present application, and it should be noted that the laser emitting device shown in fig. 3 is based on the principle of the laser emitting circuit shown in fig. 1, is the same as the principle of the laser emitting device shown in fig. 2, and is a further improvement of the laser emitting device shown in fig. 2, and the laser emitting device 30 includes: a driving assembly 301, a laser transmitter 302, an energy storage module 303 and a circuit board 304;
the driving assembly 301 is electrically connected with the laser transmitter 302, the laser transmitter 302 is electrically connected with the energy storage module 303, the energy storage module 303 is electrically connected with an external power supply (or a power supply module), and the driving assembly 301, the energy storage module 303 and the external power supply are used for generating an electric signal required for driving the laser transmitter 302;
the driving assembly 301, the laser emitter 302 and the energy storage module 303 are fixed above a circuit board 304, and a ground layer is arranged in the circuit board 304; the distance between the lower surface of the laser transmitter 302 and the ground plane of the circuit board 304 is less than or equal to 0.1 mm.
The driving component 301 may include the driving chip 101 in the circuit shown in fig. 1, and the driving component 301 is configured to output a driving signal and control a circuit inside the laser emitting device 30 to be turned on or off, where a specific principle may refer to a principle of the circuit shown in fig. 1 and is not described herein again;
the laser transmitter 302 may include the laser emitting chip 102 in the circuit shown in fig. 1, and the internal structure of the laser transmitter 302 may refer to the internal structure of the laser emitting chip 102 described in the corresponding embodiment of fig. 2;
the energy storage module 303 is used for storing electric charges, and the energy storage module 303 may include at least one capacitor 103 in the circuit shown in fig. 1. Of course, the functions of the driving assembly 301, the laser transmitter 302 and the energy storage module 303 are only illustrated, and the present application is not limited thereto.
Further, the distance between the lower surface of the laser transmitter 302 and the ground plane of the circuit board 304 is less than 100 microns. For example, the distance between the lower surface of the laser transmitter 302 and the ground plane of the circuit board 304 may be less than or equal to 90 microns, less than or equal to 50 microns, or less than or equal to 20 microns. It should be noted that the distance between the lower surface of the laser emitter 302 and the ground layer of the circuit board 304 may be defined from a plurality of angles, and the distance between the lower surface of the laser emitter 302 and the ground layer of the circuit board 304 may be the distance between the lower surface of the laser emitter 302 and the upper surface of the ground layer of the circuit board 304, or may be the distance between the lower surface of the laser emitter 302 and the lower surface of the ground layer of the circuit board 304. Illustratively, taking the lower surface of the laser emitter 302 and the lower surface of the ground layer of the circuit board 304 as an example, if the lower surface of the laser emitter 302 is parallel to the lower surface of the ground layer of the circuit board 304, the distance between the lower surface of the laser emitter 302 and the lower surface of the ground layer of the circuit board 304 is the distance between two planes; as another example, if the lower surface of laser emitter 302 is not parallel to the lower surface of the ground plane of circuit board 304, the distance between the lower surface of laser emitter 302 and the lower surface of the ground plane of circuit board 304 may be the distance between any point on the lower surface of laser emitter 302 and the closest point on the lower surface of the ground plane of circuit board 304. Of course, this is merely an example and does not represent a limitation of the present application.
Because the distance between the lower surface of the laser transmitter 302 and the ground layer of the circuit board 304 is small, that is, the distance between the connecting line between the circuit elements in the circuit and the ground layer of the circuit board 304 is reduced, as explained in connection with the embodiment of fig. 2, the distance between the two conducting wires is reduced, the mutual inductance thereof is increased, that is, the local mutual inductance between the power supply and the ground is increased, so that the parasitic inductance of the whole circuit is reduced, when the pulse signal controls the laser transmitter 30 to generate the transient current, the change rate of the transient current is increased, the peak power of the laser emission is increased, and the anti-interference capability of the emitted laser is increased.
It should be noted that, in order to reduce the resistance of the connecting lines, the width of the connecting lines may be increased, for example, the connecting lines may be copper sheets, the connecting lines are spread over the routing layer of the whole circuit board, and the ground provided in the circuit board may also be a ground layer in which the copper sheets are spread over the whole circuit board. Specifically, as shown in fig. 3a, fig. 3a is a schematic diagram of a shape of a connection line according to a second embodiment of the present disclosure, two connection lines, that is, two copper sheets are disposed in fig. 3a, one copper sheet connects the driving component 301 and the laser emitter 302, and the other copper sheet connects the laser emitter 302 and the energy storage module 303, because the width of the connection line is relatively large, while the resistance is reduced, the inductance of the connection line itself can also be reduced, and the parasitic inductance of the whole circuit is also reduced (the parasitic inductance can be reduced due to short and thick wiring). Optionally, with reference to fig. 3b, fig. 3b is a cross-sectional view of a circuit board according to a second embodiment of the present disclosure, in an embodiment of the present disclosure, the circuit board 304 includes a routing layer 314, an intermediate dielectric layer 324 and a ground layer 334, the intermediate dielectric layer 324 is located between the routing layer 314 and the ground layer 334, and a thickness of the intermediate dielectric layer is between 12.5 micrometers and 50 micrometers. It should be noted that the routing layer 314 is used to connect circuit elements in the circuit, the Ground layer 334 is a power Ground (GND), the routing layer 314 and the Ground layer 334 may both be copper sheets, and the middle dielectric layer 324 may be a dielectric material such as polyimide resin. Of course, the circuit board 304 may also include other layers, for example, an insulating dielectric layer 344 may be disposed above the circuit board routing layer 314, and an insulating dielectric layer 344 may be disposed below the circuit board grounding layer 334. In one example, the thickness of the routing layer 314 and the ground layer 334 may be 12 microns. The insulating medium layer 344 may also be a dielectric material such as polyimide resin, or a combination structure of a resin material layer and a thermosetting adhesive layer, and the thickness of the insulating medium layer 344 may be 20-30 μm.
Alternatively, in one implementation, the thickness of the middle dielectric layer 324 of the circuit board 304 is less than or equal to 25 microns, or in another implementation, the thickness of the middle dielectric layer 324 of the circuit board 304 may be 12.5 microns, and in yet another implementation, the thickness of the middle dielectric layer 324 of the circuit board 304 may also be 20 microns, which is only exemplary and not intended to limit the present application.
The routing layer of the circuit board can be set to be consistent with the size and the shape of the grounding layer, and the mutual inductance effect is further increased, so that the parasitic inductance of the whole circuit is reduced, the peak power of laser emission is improved, and the anti-interference capability of emitted laser is improved.
Alternatively, in an embodiment of the present application, as shown in fig. 4, fig. 4 is a cross-sectional view of a laser emitting device provided in the second embodiment of the present application, and the laser emitting device 30 shown in fig. 4 is a further modification of the laser emitting device 30 shown in fig. 3, and as shown in fig. 4, the laser emitting device 30 includes: a driving assembly 301, a laser transmitter 302, an energy storage module 303 and a circuit board 304; the driving assembly 301 is electrically connected with the laser transmitter 302, the laser transmitter 302 is electrically connected with the energy storage module 303, and the energy storage module 303 is electrically connected with an external power supply (or a power supply module); the driving assembly 301, the laser emitter 302 and the energy storage module 303 are fixed above a circuit board 304, and a ground layer is arranged in the circuit board 304; the distance between the lower surface of the laser transmitter 302 and the ground plane of the circuit board 304 is less than or equal to 0.1 mm.
Optionally, the circuit board 304 includes a routing layer, an intermediate dielectric layer and a ground layer, the intermediate dielectric layer is located between the routing layer and the ground layer, the thickness of the intermediate dielectric layer is less than or equal to 0.1 mm, and the thickness of the intermediate dielectric layer may also be less than or equal to 50 micrometers or 20 micrometers. A first grounding hole 3041 and a second grounding hole 3042 are formed on the circuit board 304;
the first grounding hole 3041 is disposed below the driving assembly 301, and the driving assembly 301 is grounded through the first grounding hole 3041;
the second grounding hole 3042 is disposed below the energy storage module 303, and the energy storage module 303 is grounded through the second grounding hole 3042.
It should be noted that the ground holes described in this embodiment have the same functions as the first ground hole 2031 and the second ground hole 2032 described in the second embodiment, and are used to pass through the connection wire connected to the ground terminal. In this embodiment, the number of the first grounding holes 3041 may be at least one, and the number of the second grounding holes 3042 may also be at least one. The first grounding hole 3041 and the second grounding hole 3042 are provided with grounding wires for connecting GND, and the larger the number of the first grounding hole 3041 and the second grounding hole 3042 is, the larger the number of the grounding wires is, which is equivalent to increase the cross section of the grounding wires, which further reduces the resistance and inductance of the grounding wires, improves the change rate of instantaneous current, improves the peak power of laser emission, and increases the anti-interference capability of emitted laser. In fig. 4, two first ground holes 3041 and two second ground holes 3042 are exemplarily shown, which is merely an illustration and does not represent that the present application is limited thereto.
Because the connecting wire connected with the grounding end passes through the grounding hole and passes through the circuit board 304, and the thickness of the circuit board 304 is smaller than or equal to the preset thickness, the length of the connecting wire is reduced to a certain extent, the parasitic inductance of the whole circuit is further reduced, the change rate of instantaneous current is enhanced, and the anti-interference capability of emitted laser is improved.
Optionally, in an embodiment of the present application, the predetermined thickness is 20 micrometers. For example, the Circuit board 304 may be a Flexible Circuit board (FPC).
Exemplarily, as shown in fig. 5, fig. 5 is a cross-sectional view of a laser emitting device provided in the second embodiment of the present application, and the laser emitting device 30 shown in fig. 5 is a further modification of the laser emitting device 30 shown in fig. 3, and as shown in fig. 5, the laser emitting device 30 includes: a driving assembly 301, a laser transmitter 302, an energy storage module 303 and a circuit board 304; the driving assembly 301 is electrically connected with the laser transmitter 302, the laser transmitter 302 is electrically connected with the energy storage module 303, and the energy storage module 303 is electrically connected with an external power supply (or a power supply module); the driving assembly 301, the laser emitter 302 and the energy storage module 303 are fixed above a circuit board 304, and a ground layer is arranged in the circuit board 304; the distance between the lower surface of the laser transmitter 302 and the ground plane of the circuit board 304 is less than or equal to 0.1 mm. The laser emitting device 30 further includes a reinforcing plate 305, and the reinforcing plate 305 is fixed to the lower surface of the circuit board 304. Because the distance between the lower surface of the laser transmitter 302 and the ground plane of the circuit board 304 is small, the addition of the stiffener 305 may increase structural strength. For example, the material of the stiffening plate 305 may be steel. If directly use PCB, laser emitter's structural strength can guarantee, but printed circuit board is too thick, make the distance between earthing terminal and the circuit component spare (drive assembly 301, laser emitter 302 and energy storage module 303) great, compare in PCB, utilize FPC can reduce the distance between earthing terminal and the circuit component, make mutual inductance increase between power and the ground, reduce the parasitic inductance of whole circuit, and, stiffening plate 305 can increase structural strength again, compare with PCB board, not only structural strength has been guaranteed, and parasitic inductance has still been reduced, instantaneous current's rate of change has been improved, laser emission's peak power has been improved, the interference killing feature of transmission laser has been increased.
Here, based on the laser emitting device 30 shown in fig. 3, two specific implementations are described in detail for the fixing manner of the laser emitter 302 and the circuit structure of the laser emitting device 30, respectively.
Alternatively, in the first implementation manner, a fixing manner of the laser emitter 302 is described, in the second embodiment of the present application, the laser emitter 302 may be fixed on the substrate 202, and the substrate 202 is fixed on the circuit board 304, as shown in fig. 3, the laser emitter 302 is fixed on the circuit board through the substrate 202, but the laser emitter 302 may also be directly fixed on the circuit board 304, as shown in fig. 6, fig. 6 is a cross-sectional view of the laser emitting apparatus provided in the second embodiment of the present application, and the laser emitting apparatus 30 shown in fig. 6 is a further improvement of the laser emitting apparatus shown in fig. 3, and in fig. 6, the laser emitter is directly fixed on the circuit board 304.
Optionally, in one embodiment of the present application, the laser transmitter is a bare wafer laser transmitter. For example, optionally, in a first example, the distance between the lower surface of the laser emitter 302 and the upper surface of the circuit board 304 is less than or equal to 30 microns. The distance between the lower surface of laser transmitter 302 and the upper surface of circuit board 304 is less than the distance between the lower surface of laser transmitter 302 and the ground plane of circuit board 304. Of course, this is merely exemplary, and the distance between the lower surface of the laser emitter 302 and the upper surface of the circuit board 304 may be smaller than or equal to other values, such as 20 microns, 40 microns, etc. First, because the distance between the laser transmitter 302 and the circuit board 304 is less than or equal to 30 microns, the distance between the laser transmitter 302 and the ground layer of the circuit board 304 is reduced, which increases the local mutual inductance of the laser transmitter 302 and the ground, reducing the parasitic inductance of the entire circuit; secondly, because the distance between the laser transmitter 302 and the circuit board 304 is reduced, the distance between the laser transmitter 302 and other components on the circuit board 304 is reduced, the length of the connecting line between the laser transmitter 302 and other components is reduced, and the parasitic inductance of the whole circuit of the laser emitting device 30 is reduced. The parasitic inductance of the whole circuit is reduced due to two reasons, so that the change rate of instantaneous current is improved, the peak power of laser emission is improved, and the anti-interference capability of the emitted laser is improved.
It should be noted that the distance between the laser emitter 302 and the circuit board 304 may be defined as the distance between the lower surface of the laser emitter 302 and the upper surface of the circuit board 304, and when the lower surface of the laser emitter 302 is parallel to the upper surface of the circuit board 304, the distance between the laser emitter 302 and the circuit board 304 is the distance between two planes; when the lower surface of laser emitter 302 is not parallel to the upper surface of circuit board 304, the distance between laser emitter 302 and circuit board 304 is the distance between any point on the lower surface of laser emitter 302 and the closest point on the upper surface of circuit board 304. Of course, this is merely an example and does not represent a limitation of the present application.
Fig. 7 is a schematic diagram illustrating a fixing effect of the laser emitter according to various embodiments of the present disclosure, and optionally, as shown in fig. 7, the laser emitter 302 is fixed on the upper surface of the circuit board 304 by at least one anode connection line 306, and the cathode of the laser emitter 302 is disposed on the lower surface of the laser emitter 302.
Laser emitter 302 is fixed in the upper surface of circuit board 304 through positive pole connecting wire 306, does not increase other fixed subassembly, and positive pole connecting wire 306 has not only played the effect of fixed laser emitter 302, can also connect laser emitter 302's positive pole, has simplified circuit structure.
It should be noted that the anode of the laser emitter 302 is a current input end, and the cathode of the laser emitter 302 is a current output end, alternatively, the laser emitter 302 may include at least two laser diodes connected in parallel with each other, or may include at least two laser diodes connected in series with each other, the anode of the laser emitter 302 may also be an anode (current input end) of the laser diode, and the cathode of the laser emitter 302 may also be a cathode (current output end) of the laser diode.
Optionally, in an embodiment of the present application, a nickel-palladium gold layer 307 is disposed between the laser emitter 302 and the circuit board 304, and the at least one anode connection line 306 is bonded to the nickel-palladium gold layer 307. The nickel palladium layer 307 can make the anode connection line 306 better connected because of its good conductivity.
Optionally, in an embodiment of the present application, the cathode of the laser emitter is fixed to the upper surface of the circuit board by silver paste. The cathode of the laser emitter 302 is disposed on the lower surface of the laser emitter 302, a silver paste is disposed between the lower surface of the laser emitter 302 and the upper surface of the circuit board 304, and the driving assembly 301 is connected to the cathode of the laser emitter 302 through the silver paste.
Of course, this is merely an exemplary illustration, and alternatively, a specific implementation manner is mentioned here to illustrate that the laser transmitter 302 may include at least two laser diodes connected in parallel, an anode of each laser diode is bound with the nickel-palladium-gold layer 307 through the anode connection line 306, and of course, it is also implemented that the anode of each laser diode is electrically connected with the nickel-palladium-gold layer 307 through the anode connection line 306, and the energy storage module 303 may be electrically connected with the nickel-palladium-gold layer 307.
Alternatively, in the second implementation, the circuit structure of the laser emitting device 30 is described as follows:
optionally, a first end of the energy storage module 303 is electrically connected to the input end of the laser emitter 302, and a second end of the energy storage module 303 is grounded;
the output end of the laser transmitter 302 is electrically connected with the first input end of the driving assembly 301;
a second input end of the driving component 301 is connected to the pulse signal, and an output end of the driving component 301 is grounded.
As shown in fig. 8, fig. 8 is a schematic circuit structure diagram of a laser emitting device according to embodiments of the present disclosure, in this embodiment, a driving component 301 may be the driving chip 101 in the first embodiment, a laser emitter 302 may be the laser emitting chip 102 in the first embodiment, and an energy storage module 303 may include at least one capacitor, such as one capacitor or a combination of multiple capacitors, which may be the same as the capacitor 103 in the first embodiment. Of course, this is merely an example and does not represent a limitation of the present application. The driving component 301 may also be other structures for generating driving signals; the laser transmitter 302 may also be a device of other configurations for emitting laser light under the control of a driving signal, for example, the laser transmitter 302 may include a laser diode array including at least one laser diode; the energy storage module 303 may also be other elements for storing energy.
Alternatively, as shown in fig. 8, the driving assembly 301 includes a waveform shaping circuit 3011 and a switching unit 3012;
the input end of the waveform shaping circuit 3011 is connected to a pulse signal, and the output end of the waveform shaping circuit 3011 is connected to the control end of the switch unit 3012;
the input end of the switch unit 3012 is electrically connected to the output end of the laser emitter 302, and the output end of the switch unit 3012 is grounded.
Alternatively, as shown in fig. 8, in one embodiment of the present application, the switching unit 3012 is a field effect transistor 3112;
the drain of the field-effect tube 3112 is electrically connected to the output terminal of the laser emitter 302, the gate of the field-effect tube 3112 is electrically connected to the output terminal of the waveform shaping circuit 3011, and the source of the field-effect tube 3112 is grounded. Illustratively, the fet 3112 may be a MOS transistor.
It should be noted that the explanation in the first embodiment of the present application is also applicable to the second embodiment of the present application. The Laser Emitting chip and the Laser emitter described in the embodiments of the present application may be Vertical-Cavity Surface-Emitting lasers (VCSELs).
The laser emitting device provided by the embodiment of the application increases the local mutual inductance of the power supply and the ground by reducing the distance between the lower surface of the laser emitter 302 and the ground layer of the circuit board 304, thereby reducing the parasitic inductance generated by the circuit in the laser emitting device, enhancing the instantaneous current generated when the driving signal controls the laser emitting device, improving the peak power of laser emission and improving the anti-interference capability of laser emission.
Example III,
With reference to the first embodiment and the second embodiment, a third embodiment of the present application provides a laser emitting device, as shown in fig. 9, fig. 9 is a cross-sectional view of the laser emitting device provided in the third embodiment of the present application, the laser emitting device includes the same components and adopts the same circuit principle as the laser emitting device in the second embodiment, therefore, the same components are denoted by the same reference numerals, and in the present embodiment, the laser emitting device 30 includes: the method comprises the following steps: a driving assembly 301, a laser transmitter 302, an energy storage module 303 and a circuit board 304;
the driving assembly 301 is electrically connected with the laser transmitter 302, the laser transmitter 302 is electrically connected with the energy storage module 303, the energy storage module 303 is electrically connected with an external power supply, and the driving assembly 301, the energy storage module 303 and the external power supply are used for generating electric signals required for driving the laser transmitter 302;
the driving assembly 301, the laser emitter 302 and the energy storage module 303 are fixed on the circuit board 304;
laser transmitter 302 is a bare wafer laser transmitter.
Optionally, in one embodiment of the present application, the distance between the lower surface of the laser emitter 302 and the upper surface of the circuit board 304 is less than or equal to 30 microns.
Optionally, in another embodiment of the present application, the driving assembly 301, the laser emitter 302, and the energy storage module 303 are fixed above the circuit board 304, a ground layer is disposed in the circuit board 304, and a distance between a lower surface of the laser emitter 302 and the ground layer of the circuit board 304 is less than or equal to 0.1 mm.
It should be noted that the explanations in the first embodiment and the second embodiment of the present application are also applicable to the third embodiment of the present application, and the elements and structures in the second embodiment of the present application can also be supplemented in the third embodiment, which is not described herein again.
The laser emitting device provided by the embodiment of the application increases the local mutual inductance of the power supply and the ground by reducing the distance between the lower surface of the laser emitter 302 and the ground layer of the circuit board 304, thereby reducing the parasitic inductance generated by the circuit in the laser emitting device, enhancing the instantaneous current generated when the driving signal controls the laser emitting device, improving the peak power of laser emission and improving the anti-interference capability of laser emission.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims (10)

1. A laser transmitter, comprising: the laser device comprises a driving assembly, a laser transmitter, an energy storage module and a circuit board;
the driving assembly is electrically connected with the laser transmitter, the laser transmitter is electrically connected with the energy storage module, the energy storage module is electrically connected with an external power supply, and the driving assembly, the energy storage module and the external power supply are used for generating electric signals required for driving the laser transmitter;
the driving assembly, the laser transmitter and the energy storage module are fixed above the circuit board, a ground layer is arranged in the circuit board, and the laser transmitter is a bare chip laser transmitter;
the distance between the lower surface of the laser emitter and the grounding layer of the circuit board is less than or equal to 0.1 millimeter;
the circuit board is a flexible circuit board, the laser emitting device further comprises a reinforcing plate, and the reinforcing plate is fixed on the lower surface of the circuit board.
2. The laser emitting device of claim 1, wherein the circuit board comprises a routing layer, an intermediate dielectric layer, and the ground layer, the intermediate dielectric layer being positioned between the routing layer and the ground layer, the intermediate dielectric layer having a thickness of between 12.5 microns and 50 microns.
3. The laser transmitter of claim 1, wherein a distance between a lower surface of the laser transmitter and an upper surface of the circuit board is less than or equal to 30 microns.
4. The laser transmitter according to claim 1, wherein the circuit board is provided with a first ground hole and a second ground hole;
the first grounding hole is arranged below the driving assembly, and the driving assembly is grounded through the first grounding hole;
the second grounding hole is formed below the energy storage module, and the energy storage module is grounded through the second grounding hole.
5. The laser transmitter of claim 1, wherein the laser transmitter is fixed on the upper surface of the circuit board by at least one anode connecting wire, and the cathode of the laser transmitter is arranged on the lower surface of the laser transmitter.
6. The laser transmitter according to claim 5, wherein a nickel-palladium-gold layer is disposed between the laser transmitter and the circuit board, and the at least one anode connecting line is bonded to the nickel-palladium-gold layer.
7. The laser transmitter according to claim 5, wherein the cathode of the laser transmitter is fixed on the upper surface of the circuit board by silver paste.
8. Laser transmitter according to claim 1,
the first end of the energy storage module is electrically connected with the input end of the laser transmitter, and the second end of the energy storage module is grounded;
the output end of the laser transmitter is electrically connected with the first input end of the driving assembly;
the second input end of the driving component is connected with a pulse signal, and the output end of the driving component is grounded.
9. The laser transmitter according to claim 8, wherein the driving assembly includes a waveform shaping circuit and a switching unit;
the input end of the waveform shaping circuit is connected with the pulse signal, and the output end of the waveform shaping circuit is connected with the control end of the switch unit;
the input end of the switch unit is electrically connected with the output end of the laser transmitter, and the output end of the switch unit is grounded.
10. The laser transmitter according to claim 9, wherein the switching unit is a field effect transistor;
the drain electrode of the field effect transistor is electrically connected with the output end of the laser transmitter, the grid electrode of the field effect transistor is electrically connected with the output end of the waveform shaping circuit, and the source electrode of the field effect transistor is grounded.
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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113872043A (en) * 2020-06-11 2021-12-31 台达电子工业股份有限公司 Light emitting device for optical radar
CN112955777A (en) * 2021-02-07 2021-06-11 深圳阜时科技有限公司 Light emitting bare chip, emission module, sensing device and electronic equipment
US11670906B2 (en) 2021-09-22 2023-06-06 Tanway Technology (Beijing) Co., Ltd Narrow-pulse-width pulse laser
CN113555767B (en) * 2021-09-22 2022-02-11 探维科技(北京)有限公司 Narrow pulse width pulse laser
WO2023142030A1 (en) * 2022-01-29 2023-08-03 华为技术有限公司 Circuit structure, transmitting module, detection apparatus, and terminal device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101378177A (en) * 2007-08-31 2009-03-04 精工爱普生株式会社 Drive circuit for semiconductor light emitting element, and light source device, lighting device, monitor device, and image display device using the drive circuit
CN102956605A (en) * 2012-11-19 2013-03-06 苏州远创达科技有限公司 Semiconductor component and manufacturing method thereof
CN103236425A (en) * 2013-04-23 2013-08-07 山东华芯半导体有限公司 DRAM (dynamic random access memory) double-chip stacking and packaging structure and packaging technology
CN104735908A (en) * 2013-12-18 2015-06-24 深圳富泰宏精密工业有限公司 Printed circuit board
CN105122443A (en) * 2013-04-16 2015-12-02 株式会社村田制作所 High-frequency component and high-frequency module provided with same
CN106486887A (en) * 2015-08-29 2017-03-08 南京理工大学 A kind of pulse laser emission circuit based on laser diode
CN109378703A (en) * 2017-03-23 2019-02-22 英飞凌科技股份有限公司 Laser diode module
CN209266843U (en) * 2019-01-18 2019-08-16 深圳市飞思卓科技有限公司 Laser drive and optical module

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004088046A (en) * 2002-06-25 2004-03-18 Sumitomo Electric Ind Ltd Optical receiver and method of manufacturing the same
US20040107569A1 (en) * 2002-12-05 2004-06-10 John Guzek Metal core substrate packaging
US7253516B2 (en) * 2003-10-10 2007-08-07 Nxp B.V. Electronic device and carrier substrate for same
JP2005243930A (en) * 2004-02-26 2005-09-08 Alps Electric Co Ltd Flexible printed wiring substrate
CN101005730A (en) * 2006-01-20 2007-07-25 佛山市顺德区顺达电脑厂有限公司 Circuit board for reducing electromagnetic interference of electronic product
US20110222567A1 (en) * 2010-03-09 2011-09-15 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. optoelectronic transistor outline (to)-can header assembly having a configuration that improves heat dissipation and reduces thermal resistance
FR3004592B1 (en) * 2013-04-10 2016-08-05 Brightloop BODY FOR CONTROLLING AT LEAST ONE LASER DIODE
CN103984066B (en) * 2014-05-20 2016-08-24 昆山柯斯美光电有限公司 Multi-path parallel optical component and assemble method thereof for high-speed transfer
KR102088973B1 (en) * 2015-09-17 2020-03-13 한국전자통신연구원 Flexible printed circuit board

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101378177A (en) * 2007-08-31 2009-03-04 精工爱普生株式会社 Drive circuit for semiconductor light emitting element, and light source device, lighting device, monitor device, and image display device using the drive circuit
CN102956605A (en) * 2012-11-19 2013-03-06 苏州远创达科技有限公司 Semiconductor component and manufacturing method thereof
CN105122443A (en) * 2013-04-16 2015-12-02 株式会社村田制作所 High-frequency component and high-frequency module provided with same
CN103236425A (en) * 2013-04-23 2013-08-07 山东华芯半导体有限公司 DRAM (dynamic random access memory) double-chip stacking and packaging structure and packaging technology
CN104735908A (en) * 2013-12-18 2015-06-24 深圳富泰宏精密工业有限公司 Printed circuit board
CN106486887A (en) * 2015-08-29 2017-03-08 南京理工大学 A kind of pulse laser emission circuit based on laser diode
CN109378703A (en) * 2017-03-23 2019-02-22 英飞凌科技股份有限公司 Laser diode module
CN209266843U (en) * 2019-01-18 2019-08-16 深圳市飞思卓科技有限公司 Laser drive and optical module

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