CN111224244A - Reconfigurable transmission type phase control super-surface unit - Google Patents
Reconfigurable transmission type phase control super-surface unit Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
Abstract
The invention discloses a reconfigurable transmission type phase control super-surface unit which comprises a surface metal structure layer, a surface dielectric slab layer, an upper dielectric slab layer, a middle annular hollow metal layer, a lower dielectric slab layer, a bottom dielectric slab layer and a bottom metal structure layer which are sequentially arranged. The invention realizes the high-efficiency regulation and control of the electromagnetic wave transmission phase by regulating and controlling the working state of the regulating and controlling diode integrated in the basic unit.
Description
Technical Field
The invention belongs to the technical field of novel artificial electromagnetic materials, and particularly relates to a transmission type phase control super-surface unit capable of being reconstructed in a microwave band.
Background
The metamaterial is an artificial composite structure, and unique electromagnetic wave manipulation characteristics can be given to the metamaterial through proper design of the structure, the size, the arrangement mode and the like of the metamaterial. The super surface is derived from a metamaterial, has a two-dimensional plane structure, has the advantages of being ultrathin, low in loss and the like compared with a three-dimensional structure of the metamaterial, and can accurately and flexibly control electromagnetic waves. In recent years, the digital coding super surface describes electromagnetic characteristics through a digital coding sequence, the flexibility of electromagnetic wave regulation is further improved, and the super surface design is simplified to a great extent.
Based on the development of technology, the concept of continuous improvement and subsequent reconfigurability of devices has been proposed. The reconfigurable super surface refers to the electromagnetic property of the reconfigurable super surface is regulated and controlled by changing the components of the self structure. For example, the reconstruction of super-surfaces is achieved by using micro-machines, micro-fluids, and various semiconductor devices. Reconfigurable super-surfaces have found applications in the microwave, terahertz, infrared and visible light bands.
However, a large number of super-surface units still complete transmission phase regulation by changing the specific structural size or shape, and once the super-surface units are designed, only one phase can be realized by a single unit, so that the super-surface units have poor flexibility and cannot be reconstructed.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a reconfigurable transmission type phase control super-surface unit, which realizes the reconfiguration of the super-surface unit by controlling the working state of a diode. Under the incidence of electromagnetic waves, the unit can generate four transmission phase responses, and the phase regulation range is close to 270 degrees.
In order to achieve the purpose, the invention adopts the following technical scheme:
a reconfigurable transmission type phase control super-surface unit comprises a surface metal structure layer, a surface dielectric slab layer, an upper dielectric slab layer, a middle annular hollow metal layer, a lower dielectric slab layer, a bottom dielectric slab layer and a bottom metal structure layer which are sequentially arranged; the surface metal structure layer comprises a first rectangular metal ring, a first rectangular patch, a second rectangular patch and a third rectangular patch which are attached to the upper surface of the top medium layer, the first rectangular patch and the third rectangular patch are respectively connected with left and right inner side frames of the first rectangular metal ring, the first rectangular patch and the second rectangular patch are connected through a surface second regulating diode, the second rectangular patch and the third rectangular patch are connected through a surface first regulating diode, and anodes of the second regulating diode and the first regulating diode are respectively connected with left and right frames of the second rectangular patch; the bottom metal structure layer comprises a second rectangular metal ring, a fourth rectangular patch, a fifth rectangular patch and a sixth rectangular patch which are attached to the lower surface of the bottom medium layer, the fourth rectangular patch and the sixth rectangular patch are respectively connected with the left inner frame and the right inner frame of the second rectangular metal ring, the fourth rectangular patch and the fifth rectangular patch are connected through a bottom third regulating diode, the fifth rectangular patch and the sixth rectangular patch are connected through a bottom fourth regulating diode, and the anodes of the third regulating diode and the fourth regulating diode are respectively connected with the left frame and the right frame of the fifth rectangular patch; the top metal structure layer is connected with the bottom metal structure layer through the metal through hole.
Further, the period side length p of the basic unit is 6.2-8.2 mm; the length a1 of the outer frame of the first rectangular metal ring is 3.32-3.52mm, and the width b1 of the outer frame is 3.52-3.72 mm; the length c1 of the inner frame of the first rectangular metal ring is 2.6-2.8mm, and the width d1 of the inner frame is 2.5-2.7 mm; the length e1 of the first rectangular patch, the length e1 of the second rectangular patch and the length e1 of the third rectangular patch are all 0.7-0.9mm, and the width f1 of the first rectangular patch, the second rectangular patch and the third rectangular patch are all 0.4-0.6 mm; the outer ring diameter R1 of the middle annular hollow metal layer is 0.5-0.7mm, and the inner ring diameter R2 is 0.3-0.5 mm; the length a2 of the outer frame of the second rectangular metal ring is 3.13-3.33mm, the width b2 of the outer frame is 3.5-3.7mm, the length c2 of the inner frame of the second rectangular metal ring is 2.8-3.0mm, and the width d2 of the inner frame is 2.4-2.6 mm; the length e2 of the fourth rectangular patch is 0.75-0.95 mm; the length e3 of the fifth rectangular patch is 1.0-1.2 mm; the length e4 of the sixth rectangular patch is 0.55-0.75 mm; the widths f2 of the fourth rectangular patch, the fifth rectangular patch and the sixth rectangular patch are all 0.3-0.5 mm; the thickness h of the top dielectric plate layer and the bottom dielectric plate layer is 0.408-0.608mm, the dielectric constant is 2.74-3.14, the loss tangent is-0.002-0.004, and the top dielectric plate layer and the bottom dielectric plate layer adopt the same medium; the thickness h1 of the upper dielectric plate layer and the lower dielectric plate layer is 0.038-0.058mm, the dielectric constant is 2.15-2.55, the loss tangent is-0.001-0.005, and the upper dielectric plate layer and the lower dielectric plate layer adopt the same medium.
Preferably, the periodic side length p of the basic unit is 7.2 mm; the length a1 of the outer frame of the first rectangular metal ring is 3.42mm, and the width b1 of the outer frame is 3.62 mm; the length c1 of the inner frame of the first rectangular metal ring is 2.7mm, and the width d1 of the inner frame is 2.6 mm; the lengths e1 and the widths f1 of the first rectangular patch, the second rectangular patch and the third rectangular patch are all 0.8mm and 0.5mm respectively; the outer ring diameter R1 of the middle annular hollow metal layer is 0.6mm, and the inner ring diameter R2 is 0.4 mm; the length a2 of the outer frame of the second rectangular metal ring is 3.23mm, the width b2 of the outer frame is 3.6mm, the length c2 of the inner frame of the second rectangular metal ring is 2.9mm, and the width d2 of the inner frame is 2.5 mm; the length e2 of the fourth rectangular patch is 0.85 mm; the length e3 of the fifth rectangular patch is 1.1 mm; the length e4 of the sixth rectangular patch is 0.65 mm; the widths f2 of the fourth rectangular patch, the fifth rectangular patch and the sixth rectangular patch are all 0.4 mm; the thickness h of the top dielectric plate layer and the bottom dielectric plate layer is 0.508 mm; the thickness h1 of the upper dielectric slab layer and the lower dielectric slab layer is 0.048 mm.
The super-surface basic unit has 4 basic states, 4 digital state responses are independently generated under the irradiation of normal incidence electromagnetic waves by controlling the on-off states of the surface layer regulating diode and the bottom layer regulating diode, the four digital state responses correspond to 4 digital state codes, and the 4 digital state codes correspond to the on-off states of the 4 surface layer regulating diode and the bottom layer regulating diode.
Further, the 4 digital states are encoded as "0101", "0110", "1001", and "1010", where "0" indicates that the modulation diode is in the off state, and "1" indicates that the modulation diode is in the on state.
Further, the 4 digital state codes "0101", "0110", "1001", and "1010" correspond to 4 digital state responses, and the 4 digital state responses correspond to 4 different transmission phase responses.
Further, among the working states of the 4 basic units, "0101" corresponds to the working state of the first control diode on the surface layer/the second control diode on the surface layer being on/off, and the working state of the third control diode on the bottom layer/the fourth control diode being on/off; the working state of '0110' corresponding to the first regulating diode on the surface layer/the second regulating diode on the surface layer is cut off/conducted, and the working state of the third regulating diode on the bottom layer/the fourth regulating diode is conducted/cut off; the '1001' state corresponds to the on/off state of the first surface layer regulating diode/the second surface layer regulating diode, and the off/on state of the third bottom layer regulating diode/the fourth regulating diode; "1010" corresponds to the working state of the first control diode/the second control diode of the surface layer being on/off, and the working state of the third control diode/the fourth control diode of the bottom layer being on/off.
Compared with the prior art, the invention has the following beneficial effects:
1. the method is different from the traditional scheme of analyzing and designing the super surface by using equivalent medium parameters, analyzes and designs the super surface from the angle of digital coding, and greatly simplifies the design process;
2. the invention realizes wider transmission phase response range and higher transmission efficiency by controlling the working state of the diode.
3. The invention has simple processing and convenient realization, and is easy to prepare and process in a microwave frequency band only by depending on simple metal patterns.
Drawings
FIG. 1 is a schematic front view of a basic unit according to the present invention;
FIG. 2 is a schematic view of the reverse structure of the basic unit of the present invention;
FIG. 3 is a schematic view of a middle annular hollowed-out metal layer of the basic unit of the present invention;
FIG. 4 is a schematic cross-sectional view of the basic unit of the present invention;
wherein: 1-a surface metal structure, 11-a first rectangular metal ring, 12-a first rectangular patch, 13-a second rectangular patch, 14-a third rectangular patch, 2-a surface regulating diode, 21-a first regulating diode, 22-a second regulating diode, 3-a surface dielectric slab layer, 4-an upper dielectric slab layer, 5-a middle annular hollowed metal layer, 6-a lower dielectric slab layer, 7-a bottom dielectric slab layer, 8-a bottom regulating diode and 9-a bottom metal structure; p is the periodic side length of the basic unit, a1 is the length of the outer frame of the first rectangular metal ring, b1 is the width of the outer frame of the first rectangular metal ring, c1 is the length of the inner frame of the first rectangular metal ring, d1 is the width of the inner frame of the first rectangular metal ring, e1 is the length of the first rectangular patch, the second rectangular patch and the third rectangular patch, f1 is the width of the first rectangular patch, the second rectangular patch and the third rectangular patch, R1 is the outer ring diameter of the middle ring-shaped hollowed metal layer, R2 is the inner ring diameter of the middle ring-shaped hollowed metal layer, a2 is the length of the outer frame of the second rectangular metal ring, b2 is the width of the outer frame of the second rectangular metal ring, c2 is the length of the inner frame of the second rectangular metal ring, d2 is the width of the inner frame of the second rectangular metal ring, e2 is the length of the fourth rectangular patch, e3 is the length of the fifth rectangular patch, e4 is the length of the sixth rectangular patch, f2 is the width of the fourth rectangular patch, the fifth rectangular patch and the sixth rectangular patch, h is the thickness of the top layer/bottom layer dielectric plate layer, and h1 is the thickness of the upper layer/lower layer dielectric plate layer;
FIG. 5 is a simulation result of the basic unit of the present invention, in which: FIG. 5 (a) is an RLC model of a diode; fig. 5 (b) and (c) are simulation results of transmission phase and amplitude responses of the basic cell.
Detailed Description
The present invention will be further described with reference to the following examples.
As shown in fig. 1-4, a reconfigurable transmission type phase-modulated super-surface unit basic unit comprises a surface metal structure layer 1, a surface dielectric slab layer 3, an upper dielectric slab layer 4, a middle annular hollow metal layer 5, a lower dielectric slab layer 6, a bottom dielectric slab layer 7 and a bottom metal structure layer 9, which are sequentially arranged; the surface metal structure layer comprises a first rectangular metal ring 11, a first rectangular patch 12, a second rectangular patch 13 and a third rectangular patch 14 which are attached to the upper surface of the top medium layer 3, the first rectangular patch 12 and the third rectangular patch 14 are respectively connected with left and right inner side frames of the first rectangular metal ring 11, the first rectangular patch 12 is connected with the second rectangular patch 13 through a surface second regulating diode 22, the second rectangular patch 13 is connected with the third rectangular patch 14 through a surface first regulating diode 21, and anodes of the second regulating diode 22 and the first regulating diode 21 are respectively connected with left and right frames of the second rectangular patch 13; the bottom metal structure layer comprises a second rectangular metal ring 91, a fourth rectangular patch 92, a fifth rectangular patch 93 and a sixth rectangular patch 94 which are attached to the lower surface of the bottom dielectric layer 7, the fourth rectangular patch 92 and the sixth rectangular patch 94 are respectively connected with the left inner frame and the right inner frame of the second rectangular metal ring 91, the fourth rectangular patch 92 and the fifth rectangular patch 93 are connected through a bottom third regulating diode 81, the fifth rectangular patch 93 and the sixth rectangular patch 94 are connected through a bottom fourth regulating diode 82, and the anodes of the third regulating diode 81 and the fourth regulating diode 82 are respectively connected with the left frame and the right frame of the fifth rectangular patch 93; the top metal structure layer 1 is connected with the bottom metal structure layer 9 through metal through holes.
The periodic side length p of the basic unit is 6.2-8.2 mm; the length a1 of the outer frame of the first rectangular metal ring 11 is 3.32-3.52mm, and the width b1 of the outer frame is 3.52-3.72 mm; the length c1 of the inner frame of the first rectangular metal ring 11 is 2.6-2.8mm, and the width d1 of the inner frame is 2.5-2.7 mm; the first rectangular patch 12, the second rectangular patch 13 and the third rectangular patch 14 all have a length e1 of 0.7-0.9mm and a width f1 of 0.4-0.6 mm; the outer ring diameter R1 of the middle annular hollow metal layer 5 is 0.5-0.7mm, and the inner ring diameter R2 is 0.3-0.5 mm; the length a2 of the outer frame of the second rectangular metal ring 91 is 3.13-3.33mm, the width b2 of the outer frame is 3.5-3.7mm, the length c2 of the inner frame of the second rectangular metal ring 91 is 2.8-3.0mm, and the width d2 of the inner frame is 2.4-2.6 mm; the length e2 of the fourth rectangular patch 92 is 0.75-0.95 mm; the length e3 of the fifth rectangular patch 93 is 1.0-1.2 mm; the length e4 of the sixth rectangular patch 94 is 0.55-0.75 mm; the widths f2 of the fourth rectangular patch 92, the fifth rectangular patch 93 and the sixth rectangular patch 94 are all 0.3-0.5 mm; the thickness h of the top dielectric plate layer 3 and the bottom dielectric plate layer 7 is 0.408-0.608mm, the dielectric constant is 2.74-3.14, the loss tangent is-0.002-0.004, and the top dielectric plate layer 3 and the bottom dielectric plate layer 7 adopt the same medium; the thickness h1 of the upper dielectric plate layer 4 and the lower dielectric plate layer 6 is 0.038-0.058mm, the dielectric constant is 2.15-2.55, the loss tangent is-0.001-0.005, and the upper dielectric plate layer 4 and the lower dielectric plate layer 6 adopt the same medium.
As a preferable scheme, the periodic side length p of the basic unit is 7.2 mm; the length a1 of the outer frame of the first rectangular metal ring 11 is 3.42mm, and the width b1 of the outer frame is 3.62 mm; the length c1 of the inner frame of the first rectangular metal ring 11 is 2.7mm, and the width d1 of the inner frame is 2.6 mm; the first rectangular patch 12, the second rectangular patch 13 and the third rectangular patch 14 all have a length e1 of 0.8mm and a width f1 of 0.5 mm; the outer ring diameter R1 of the middle annular hollow metal layer 5 is 0.6mm, and the inner ring diameter R2 is 0.4 mm; the length a2 of the outer frame of the second rectangular metal ring 91 is 3.23mm, the width b2 of the outer frame is 3.6mm, the length c2 of the inner frame of the second rectangular metal ring 91 is 2.9mm, and the width d2 of the inner frame is 2.5 mm; the length e2 of the fourth rectangular patch 92 is 0.85 mm; the length e3 of the fifth rectangular patch 93 is 1.1 mm; the length e4 of the sixth rectangular patch 94 is 0.65 mm; the widths f2 of the fourth rectangular patch 92, the fifth rectangular patch 93 and the sixth rectangular patch 94 are all 0.4 mm; the thickness h of the top dielectric slab layer 3 and the bottom dielectric slab layer 7 is 0.508 mm; the thickness h1 of the upper dielectric plate layer 4 and the lower dielectric plate layer 6 is 0.048 mm.
The super-surface basic unit has 4 basic states, 4 digital state responses are independently generated under the irradiation of normal incidence electromagnetic waves by controlling the conduction and cut-off states of the surface layer regulating diode 2 and the bottom layer regulating diode 8, the four digital state responses correspond to 4 digital state codes, and the 4 digital state codes correspond to the conduction and cut-off states of the 4 surface layer regulating diode 2 and the bottom layer regulating diode 8.
Specifically, the 4 digital states are encoded as "0101", "0110", "1001", and "1010", where "0" indicates that the modulation diode is in the off state and "1" indicates that the modulation diode is in the on state.
Specifically, 4 digital state encodings, "0101", "0110", "1001", and "1010" correspond to 4 digital state responses, which correspond to 4 different transmit phase responses.
Specifically, among the working states of the 4 basic cells, "0101" corresponds to the working states of the surface layer first modulation diode 21/the surface layer second modulation diode 22 being on/off, and the working states of the bottom layer third modulation diode 81/the fourth modulation diode 82 being on/off; "0110" corresponds to the working state of the first control diode 21/the second control diode 22 on the surface layer being off/on, and the working state of the third control diode 81/the fourth control diode 82 on the bottom layer being on/off; "1001" corresponds to the on/off working state of the surface layer first modulation diode 21/the surface layer second modulation diode 22, and the off/on working state of the bottom layer third modulation diode 81/the fourth modulation diode 82; "1010" corresponds to the on/off operation state of the surface layer first modulation diode 21/the surface layer second modulation diode 22, and the on/off operation state of the bottom layer third modulation diode 81/the fourth modulation diode 82.
As shown in fig. 5, the diodes all adopt RLC model equivalence in unit simulation. As can be seen from fig. 5 (b) and 5 (c), when the center frequency is 26.38GHz, the transmission phase difference between the "0101" and "1010" coding cells is 85 °, the phase difference between the "1010" and "1001" cells is 90 °, the phase difference between the "1001" and "0110" cells is 75 ° under the irradiation of normal incident electromagnetic waves, and the amplitude response of the cells is greater than-4.3 dB, indicating that most of the energy of the incident wave can be effectively transmitted.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.
Claims (7)
1. A reconfigurable transmission type phase control super surface unit is characterized in that: the basic unit comprises a surface metal structure layer (1), a surface dielectric slab layer (3), an upper dielectric slab layer (4), a middle annular hollow metal layer (5), a lower dielectric slab layer (6), a bottom dielectric slab layer (7) and a bottom metal structure layer (9) which are sequentially arranged; the surface metal structure layer comprises a first rectangular metal ring (11), a first rectangular patch (12), a second rectangular patch (13) and a third rectangular patch (14) which are attached to the upper surface of the top medium layer (3), the first rectangular patch (12) and the third rectangular patch (14) are respectively connected with the left and right inner frames of the first rectangular metal ring (11), the first rectangular patch (12) and the second rectangular patch (13) are connected through a surface second regulating diode (22), the second rectangular patch (13) and the third rectangular patch (14) are connected through a surface first regulating diode (21), and the anodes of the second regulating diode (22) and the first regulating diode (21) are respectively connected with the left and right frames of the second rectangular patch (13); the bottom metal structure layer comprises a second rectangular metal ring (91), a fourth rectangular patch (92), a fifth rectangular patch (93) and a sixth rectangular patch (94) which are attached to the lower surface of the bottom dielectric layer (7), the fourth rectangular patch (92) and the sixth rectangular patch (94) are respectively connected with the left inner frame and the right inner frame of the second rectangular metal ring (91), the fourth rectangular patch (92) is connected with the fifth rectangular patch (93) through a bottom third regulating diode (81), the fifth rectangular patch (93) is connected with the sixth rectangular patch (94) through a bottom fourth regulating diode (82), and the anodes of the third regulating diode (81) and the fourth regulating diode (82) are respectively connected with the left frame and the right frame of the fifth rectangular patch (93); the top metal structure layer (1) is connected with the bottom metal structure layer (9) through a metal through hole.
2. The base unit of claim 1, wherein: the periodic side length p of the basic unit is 6.2-8.2 mm; the length a1 of the outer frame of the first rectangular metal ring (11) is 3.32-3.52mm, and the width b1 of the outer frame is 3.52-3.72 mm; the length c1 of the inner frame of the first rectangular metal ring (11) is 2.6-2.8mm, and the width d1 of the inner frame is 2.5-2.7 mm; the lengths e1 of the first rectangular patch (12), the second rectangular patch (13) and the third rectangular patch (14) are all 0.7-0.9mm, and the widths f1 are all 0.4-0.6 mm; the outer ring diameter R1 of the middle annular hollow metal layer (5) is 0.5-0.7mm, and the inner ring diameter R2 is 0.3-0.5 mm; the length a2 of the outer frame of the second rectangular metal ring (91) is 3.13-3.33mm, the width b2 of the outer frame is 3.5-3.7mm, the length c2 of the inner frame of the second rectangular metal ring (91) is 2.8-3.0mm, and the width d2 of the inner frame is 2.4-2.6 mm; the length e2 of the fourth rectangular patch (92) is 0.75-0.95 mm; the length e3 of the fifth rectangular patch (93) is 1.0-1.2 mm; the length e4 of the sixth rectangular patch (94) is 0.55-0.75 mm; the widths f2 of the fourth rectangular patch (92), the fifth rectangular patch (93) and the sixth rectangular patch (94) are all 0.3-0.5 mm; the thickness h of the top dielectric plate layer (3) and the bottom dielectric plate layer (7) is 0.408-0.608mm, the dielectric constant is 2.74-3.14, the loss tangent is-0.002-0.004, and the top dielectric plate layer (3) and the bottom dielectric plate layer (7) adopt the same medium; the thickness h1 of the upper dielectric plate layer (4) and the lower dielectric plate layer (6) is 0.038-0.058mm, the dielectric constant is 2.15-2.55, the loss tangent is-0.001-0.005, and the upper dielectric plate layer (4) and the lower dielectric plate layer (6) adopt the same medium.
3. The base unit of claim 1, wherein: the periodic side length p of the basic unit is 7.2 mm; the length a1 of the outer frame of the first rectangular metal ring (11) is 3.42mm, and the width b1 of the outer frame is 3.62 mm; the length c1 of the inner frame of the first rectangular metal ring (11) is 2.7mm, and the width d1 of the inner frame is 2.6 mm; the lengths e1 and the widths f1 of the first rectangular patch (12), the second rectangular patch (13) and the third rectangular patch (14) are all 0.8mm and 0.5mm respectively; the outer ring diameter R1 of the middle annular hollow metal layer (5) is 0.6mm, and the inner ring diameter R2 is 0.4 mm; the length a2 of the outer frame of the second rectangular metal ring (91) is 3.23mm, the width b2 of the outer frame is 3.6mm, the length c2 of the inner frame of the second rectangular metal ring (91) is 2.9mm, and the width d2 of the inner frame is 2.5 mm; the length e2 of the fourth rectangular patch (92) is 0.85 mm; the length e3 of the fifth rectangular patch (93) is 1.1 mm; the length e4 of the sixth rectangular patch (94) is 0.65 mm; the widths f2 of the fourth rectangular patch (92), the fifth rectangular patch (93) and the sixth rectangular patch (94) are all 0.4 mm; the thickness h of the top dielectric slab layer (3) and the bottom dielectric slab layer (7) is 0.508 mm; the thickness h1 of the upper dielectric slab layer (4) and the lower dielectric slab layer (6) is 0.048 mm.
4. The base unit of claims 1-3, wherein: the super-surface basic unit has 4 basic states, 4 digital state responses are independently generated under the irradiation of normal incidence electromagnetic waves by controlling the on-off states of the surface layer regulating diode (2) and the bottom layer regulating diode (8), the four digital state responses correspond to 4 digital state codes, and the 4 digital state codes correspond to the on-off states of the 4 surface layer regulating diode (2) and the bottom layer regulating diode (8).
5. The super surface unit of claim 4, wherein: the 4 digital states are encoded as "0101", "0110", "1001", and "1010", where "0" indicates that the modulation diode is in the off state and "1" indicates that the modulation diode is in the on state.
6. The super surface unit of claim 4, wherein: the 4 digital state encodings "0101", "0110", "1001", and "1010" correspond to 4 digital state responses, which correspond to 4 different transmit phase responses.
7. The super surface unit of claim 4, wherein: among the working states of the 4 basic units, "0101" corresponds to the on/off working state of the first surface layer regulating diode (21)/the second surface layer regulating diode (22), and the on/off working state of the third bottom layer regulating diode (81)/the fourth regulating diode (82); the '0110' corresponds to the working state of the first regulating diode (21) on the surface layer/the second regulating diode (22) on the surface layer being off/on, and the working state of the third regulating diode (81) on the bottom layer/the fourth regulating diode (82) being on/off; the 1001 is corresponding to the on/off working state of the surface layer first regulating diode (21)/the surface layer second regulating diode (22), and the off/on working state of the bottom layer third regulating diode (81)/the fourth regulating diode (82); "1010" corresponds to the on/off operation state of the surface layer first control diode (21)/the surface layer second control diode (22), and the on/off operation state of the bottom layer third control diode (81)/the fourth control diode (82).
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113851853A (en) * | 2021-12-01 | 2021-12-28 | 北京理工大学 | Transmission type programmable super surface for millimeter wave beam scanning |
| CN116487877A (en) * | 2023-03-21 | 2023-07-25 | 深圳大学 | Four-phase adjustable electromagnetic super-surface unit and array |
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2020
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113851853A (en) * | 2021-12-01 | 2021-12-28 | 北京理工大学 | Transmission type programmable super surface for millimeter wave beam scanning |
| CN113851853B (en) * | 2021-12-01 | 2022-05-13 | 北京理工大学 | Transmission type programmable super surface for millimeter wave beam scanning |
| CN116487877A (en) * | 2023-03-21 | 2023-07-25 | 深圳大学 | Four-phase adjustable electromagnetic super-surface unit and array |
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