CN111224204B - Multilayer slow wave transmission line - Google Patents
Multilayer slow wave transmission line Download PDFInfo
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- CN111224204B CN111224204B CN202010025094.3A CN202010025094A CN111224204B CN 111224204 B CN111224204 B CN 111224204B CN 202010025094 A CN202010025094 A CN 202010025094A CN 111224204 B CN111224204 B CN 111224204B
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- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/18—Waveguides; Transmission lines of the waveguide type built-up from several layers to increase operating surface, i.e. alternately conductive and dielectric layers
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Abstract
The invention discloses a multilayer slow-wave transmission line, wherein a transmission line (2) and a metal branch (3) are positioned on one plane of a dielectric substrate (1), and the metal branch (3) is vertically connected with the transmission line (2); the metal strip (4) is of a multilayer structure, one layer of the metal strip (4) where the transmission line (2) is located is connected with the metal branch (3), and other layers of the metal strip (4) except the layer where the transmission line (2) is located are connected with the metal branch (3) through the metal through hole (5); the structure between the metal branch knot (3) and the metal strip (4) is an interdigital structure; the dielectric substrate (1) is used for fixing or supporting the transmission line (2), the metal branches (3), the metal strips (4) and the metal through holes (5). Which has a lower phase velocity and a larger propagation constant, can realize a larger electrical length with a smaller physical length, and thus can realize miniaturization of the corresponding device.
Description
Technical Field
The invention relates to the technical field of communication, in particular to a multilayer slow-wave transmission line.
Background
In integrated circuit systems in the microwave and millimeter wave frequency band, passive devices play an important role, such as matching networks, filters, power splitters, couplers, and the like. However, the size of passive devices is always related to the operating wavelength and tends to have a large footprint. For integrated circuits, large area means high cost. Thus, conventional transmission structures in integrated circuits tend to result in high cost of the integrated circuits in which they are located.
Disclosure of Invention
In view of the above problems, the present invention provides a multi-layer slow wave transmission line.
In order to achieve the purpose of the invention, the invention provides a multilayer slow-wave transmission line, which comprises a dielectric substrate, a transmission line, metal branches, metal strips and metal through holes;
the transmission line and the metal branch are positioned on one plane of the dielectric substrate, and the metal branch is vertically connected with the transmission line;
the metal strip is of a multilayer structure, one layer where the transmission line is located in the metal strip is connected with the metal branch knot, and other layers except the layer where the transmission line is located in the metal strip are connected with the metal branch knot through the metal through hole; the structure between the metal branch knot and the metal strip is an interdigital structure;
the dielectric substrate is used for fixing or supporting the transmission line, the metal branch, the metal strip and the metal through hole.
In one embodiment, the multilayer slow-wave transmission line further includes a metal ground, and the metal ground is used for providing a ground terminal for the multilayer slow-wave transmission line.
As an embodiment, the layer where the transmission line and the metal branch are located is different from the layer where the metal ground is located.
As an example, the metal ground is a monolithic metal ground or a slotted metal ground.
In one embodiment, the metal branches, metal strips, and metal vias are periodically distributed.
As one embodiment, the propagation constant of the multilayer slow-wave transmission line becomes larger as the distance between the metal branches becomes larger.
In one embodiment, the length of the metal branch is greater than or equal to the width of the metal strip.
In one embodiment, the propagation constant of the multilayer slow wave transmission line becomes larger as the number of layers of the metal strips increases.
In one embodiment, the propagation constant of the multilayer slow wave transmission line becomes larger as the length of the metal branch becomes larger.
In one embodiment, the propagation constant of the multilayer slow wave transmission line becomes larger as the length of the metal strip becomes larger; or the propagation constant of the multilayer slow-wave transmission line becomes larger as the width of the metal strip becomes larger.
The multilayer slow wave transmission line comprises a signal line of an integrated circuit where the multilayer slow wave transmission line is located, and the transmission line and the metal branch are arranged on one plane of the dielectric substrate, so that the metal branch is vertically connected with the transmission line; the metal strip is of a multilayer structure, one layer where the transmission line is located in the metal strip is connected with the metal branch knot, and other layers except the layer where the transmission line is located in the metal strip are connected with the metal branch knot through the metal through hole; the structure between the metal branch knot and the metal strip is an interdigital structure so as to introduce required capacitance into the transmission line, thereby reducing the phase speed of the transmission line and realizing the slow wave characteristic; the transmission line, the metal branch, the metal strip and the metal through hole are fixed or supported through the dielectric substrate; compared with the traditional transmission structure in an integrated circuit, the multilayer slow-wave transmission line has lower phase speed and larger propagation constant, and can realize larger electrical length by using smaller physical length, thereby realizing the miniaturization of corresponding devices.
Drawings
FIG. 1 is a schematic diagram of a multi-layer slow wave transmission line structure according to an embodiment;
FIG. 2 is a front view of a multilayer slow wave transmission line of an embodiment;
FIG. 3(a) is a three-dimensional block diagram of a cell in a multi-layer slow wave transmission line according to an embodiment;
FIG. 3(b) is a front view of a multilayer slow wave transmission line of an embodiment;
FIG. 4 is a schematic dispersion curve diagram of a multi-layer slow-wave transmission line and a conventional microstrip line in the same process according to an embodiment;
FIG. 5 is a schematic illustration of a dispersion curve with different values for the length and width of the metal strip of one embodiment;
FIG. 6 is a schematic diagram of dispersion curves for different values of metal branch length for one embodiment;
FIG. 7 is a graphical illustration of scattering parameter curves for a transmission line of an embodiment;
FIG. 8(a) is a schematic structural diagram of a multi-layer slow wave transmission line according to an embodiment;
FIG. 8(b) is a schematic structural diagram of a multi-layer slow wave transmission line according to an embodiment;
fig. 8(c) is a schematic structural diagram of a microstrip line according to an embodiment;
FIG. 9 is a comparison of simulated phase delays for three transmission lines of an embodiment;
FIG. 10(a) is a schematic diagram of a branch coupler formed by a multi-layer slow wave transmission line according to an embodiment;
fig. 10(b) is a schematic diagram of a branch line coupler formed of microstrip lines in the same process;
FIG. 11(a) is a schematic S-parameter amplitude diagram of a slow wave transmission line coupler according to an embodiment;
fig. 11(b) is a schematic diagram of the S-parameter amplitude of the coupler of the microstrip line in the same process;
FIG. 12(a) is a schematic diagram of the phase difference between two output ports of a slow wave transmission line coupler according to an embodiment;
fig. 12(b) is a schematic diagram of the phase difference between two output ports of the microstrip line coupler in the same process.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
Referring to fig. 1 and 2, in one embodiment, a multilayer slow wave transmission line is provided, which includes a dielectric substrate 1, a transmission line 2, metal branches 3, metal strips 4, and metal vias 5;
the transmission line 2 and the metal branch 3 are positioned on one plane of the dielectric substrate 1, and the metal branch 3 is vertically connected with the transmission line 2;
the metal strip 4 is of a multilayer structure, one layer of the metal strip 4 where the transmission line 2 is located is connected with the metal branch 3, and other layers of the metal strip 4 except the layer where the transmission line 2 is located are connected with the metal branch 3 through the metal through hole 5; the structure between the metal branch 3 and the metal strip 4 is an interdigital structure;
the dielectric substrate 1 is used for fixing or supporting the transmission line 2, the metal branch 3, the metal strip 4 and the metal through hole 5.
The multilayer slow wave transmission line comprises a signal line of an integrated circuit where the multilayer slow wave transmission line is located, the signal line generally comprises a transmission line 2, metal branches 3, metal strips 4 and metal through holes 5, and the transmission line 2 and the metal branches 3 are always located on the same layer. The dielectric substrate 1 is used for fixing or supporting the transmission line 2, the metal branch 3, the metal strip 4 and the metal via 5, i.e. fixing the corresponding signal line, and the metals of different layers (such as the transmission line 2, the metal branch 3, the metal strip 4 and the metal via 5) are separated by the dielectric substrate 1, so that the signal line can smoothly perform corresponding signal transmission.
The structure between the metal branch 3 and the metal strip 4 is an interdigital structure, so that required capacitance is introduced into the transmission line, the phase speed of the transmission line is reduced, and slow wave characteristics are realized.
Specifically, the metal branches 3, the metal strips 4, and the metal through holes 5 may follow a periodic distribution law or a non-periodic distribution law.
Specifically, the metal branches 3, the metal strips 4, the metal vias 5 and other structures may be located on a single side of the transmission line 2 or on both sides of the transmission line 2.
In the multilayer slow-wave transmission line, the transmission line 2 and the metal branch 3 are arranged on one plane of the dielectric substrate 1, so that the metal branch 3 is vertically connected with the transmission line 2; the metal strip 4 is of a multilayer structure, one layer of the metal strip 4 where the transmission line 2 is located is connected with the metal branch 3, and other layers of the metal strip 4 except the layer where the transmission line 2 is located are connected with the metal branch 3 through the metal through hole 5; the structure between the metal branch 3 and the metal strip 4 is an interdigital structure, so that required capacitance is introduced into the transmission line, the phase speed of the transmission line is reduced, and slow wave characteristics are realized; the transmission line 2, the metal branches 3, the metal strips 4 and the metal through holes 5 are fixed or supported through the dielectric substrate 1; compared with the traditional transmission structure in an integrated circuit, the multilayer slow-wave transmission line has lower phase speed and larger propagation constant, and can realize larger electrical length by using smaller physical length, thereby realizing the miniaturization of corresponding devices.
In one embodiment, the multilayer slow-wave transmission line further includes a metal ground 6, and the metal ground 6 is used for providing a ground terminal for the multilayer slow-wave transmission line.
Specifically, the metal ground 6 may be disposed below the corresponding signal line.
As an embodiment, the transmission line 2 and the metal branch 3 are located in different layers from the metal ground 6.
In particular, the transmission line 2 and the metal branch 3 are the same layer of metal, and may be located in all other layers than the metal ground 6.
As an example, the metal ground 6 is a monolithic metal ground or a slotted metal ground.
Specifically, the metal ground 6 is a whole metal ground or a slotted metal ground, and whether slotting or not can change the characteristic impedance and the propagation constant of the slow-wave transmission line, such as: the metal ground 6 is slotted to increase the propagation constant of the slow wave transmission line.
In one embodiment, the metal branches 3, the metal strips 4, and the metal through holes 5 are periodically distributed.
In this embodiment, the multi-layer slow wave transmission line is formed by cascading units formed by structures of the metal branches 3, the metal strips 4, the metal through holes 5 and the like according to a periodic rule, but in practice, if the lengths of the units are different, that is, the units are cascaded according to a non-periodic rule, the slow wave transmission line can still be formed.
As an example, the propagation constant of the multi-layer slow-wave transmission line becomes larger as the distance between the metal branches 3 becomes larger.
In one embodiment, the length of the metal branches 3 is greater than or equal to the width of the metal strip 4.
In this embodiment, the distance between the metal strip 4 and the transmission line 2 is greater than 0 or equal to 0, that is, the length of the metal branch 3 is greater than or equal to the width of the metal strip 4.
In one embodiment, the propagation constant of the multilayer slow-wave transmission line becomes larger as the number of layers of the metal strip 4 increases.
In this embodiment, changing the number of layers of the metal strip 4 can change the propagation constant of the corresponding multilayer slow-wave transmission line; specifically, the transmission constant of the transmission line becomes large as the number of layers of the metal strip 4 increases without changing other parameters.
In one embodiment, the propagation constant of the multilayer slow-wave transmission line becomes larger as the length of the metal stub 3 becomes larger.
In one embodiment, the propagation constant of the multilayer slow-wave transmission line becomes larger as the length of the metal strip 4 becomes larger; or the propagation constant of the multilayer slow-wave transmission line becomes larger as the width of the metal strip 4 becomes larger.
In one embodiment, the length of the metal strip 4 may be less than the spacing between adjacent metal branches 3; the characteristic impedance and the propagation constant of the slow-wave transmission line can be changed by changing the length and the width of the metal strip 4, the length of the metal branches 3 and the distance between the adjacent metal branches 3. For example, increasing the length or width of the metal strip 4 increases the propagation constant of the corresponding slow-wave transmission line; increasing the length of the metal stub 3 increases the propagation constant of the slow-wave transmission line; the distance between adjacent metal branches 3 increases the propagation constant of the slow wave transmission line.
Furthermore, the transmission line technology of the multilayer slow wave transmission line can be realized by adopting a single-layer dielectric substrate, and can be applied to various semiconductor processes including but not limited to CMOS (complementary metal oxide semiconductor) processes, LTCC (low temperature co-fired ceramic), PCB (printed circuit board) and the like. Which can achieve significant slow wave characteristics. The above-described multi-layer slow wave transmission line can achieve the same electrical length with a smaller physical size than a conventional transmission line. If the method is applied to the passive device, the size of the passive device can be reduced; the method can realize remarkable slow wave characteristics, has a large propagation constant, and is beneficial to realizing the miniaturization of the passive device.
In one embodiment, the structure of the multilayer slow-wave transmission line can be referred to fig. 1 and fig. 2, wherein the metal branches 3, the metal strips 4, the metal vias 5 and other structures are all located on a single side of the transmission line 2 and follow a periodic distribution rule; the multilayer slow wave transmission line provided by this embodiment includes 4 periodic units, that is, is formed by cascading 4 periodic units, and the structure of each unit can be shown in fig. 3, where fig. 3(a) is a three-dimensional structural diagram of the multilayer slow wave transmission line unit, and fig. 3(b) is a front view of the multilayer slow wave transmission line unit.
Further, the dispersion curve of the multi-layer slow-wave transmission line provided by the present embodiment and the conventional microstrip line in the same process can be referred to as fig. 4. In fig. 4, the abscissa represents the phase shift of a signal through one period unit, and the ordinate represents the frequency. Fig. 4 shows that the multilayer slow-wave transmission line provided by the present embodiment has a significant slow-wave characteristic.
Fig. 5 is a dispersion curve with different values for the length and width of the metal strip. In fig. 5, the abscissa represents the phase shift of a signal through one period unit, and the ordinate represents the frequency. Fig. 5 shows that increasing the length and width of the metal strip increases the degree of downward bending of the dispersion curve of the transmission line, i.e. increases the propagation constant
FIG. 6 is a dispersion curve with different values for the length of the metal branch. In fig. 6, the abscissa represents the phase shift of the frequency signal by one period unit, and the ordinate represents the frequency. Fig. 6 shows that the longer the metal branch, the greater the degree to which the dispersion curve of the transmission line bends downward.
Fig. 7 is a scattering parameter curve of the transmission line of the present embodiment. In fig. 7, the abscissa represents frequency, and the ordinate represents amplitude of S parameter, and fig. 7 shows that, | S11| is less than-20 dB, and | S21| is greater than-0.7 dB in the frequency band of 100GHz-180GHz, which illustrates that the transmission line in the embodiment has better transmission effect in the whole frequency band.
In one embodiment, the structure of the multilayer slow-wave transmission line can be shown in fig. 8, in which the metal stub, the metal strip, and the metal via are located on a single side of the transmission line and follow a periodic distribution rule. The multi-layer slow-wave transmission line in fig. 8(a) is formed by cascading 6 periodic units, the total length of the transmission line is 245um, and the metal ground in fig. 8(a) is a whole metal ground. Unlike fig. 8(a), the multi-layer slow-wave transmission line in fig. 8(b) is formed by cascading 4 periodic units, and has periodic slots on the metal ground, and the total length of the transmission line is 165 um. Fig. 8(c) is a microstrip line implemented with the same process, and its total length is 380 um. The characteristic impedance of all three transmission lines is close to 50 ohms.
Fig. 9 compares the simulated phase delays of the three transmission lines. In fig. 9, the abscissa indicates frequency and the ordinate indicates phase shift of a signal through the transmission lines, and fig. 9 shows that three transmission lines achieve the same phase delay at 140 GHz. The lengths of the multilayer slow-wave transmission lines of fig. 8(a) and 8(b) are 0.64 times and 0.43 times the length of the microstrip line in fig. 8(c), respectively.
In one embodiment, fig. 10(a) is a branch line coupler composed of the above-described multilayer slow wave transmission line, and fig. 10(b) is a branch line coupler composed of microstrip lines in the same process. Fig. 11 is a simulation result of S-parameter of the coupler shown in fig. 10, in which fig. 11(a) is the magnitude of S-parameter of the coupler of the slow wave transmission line in fig. 10(a), and fig. 11(b) is the simulated magnitude of S-parameter of the coupler in fig. 10 (b). Fig. 12 is a simulation result of phase shift of the coupler shown in fig. 10, in which fig. 12(a) is a phase difference between two output ports of the slow wave transmission line coupler in fig. 10(a), and fig. 12(b) is a phase difference between two output ports of the microstrip line coupler in fig. 10 (b). Compared with a branch line coupler realized by a microstrip line, the size of the branch line coupler formed by the multilayer slow wave transmission line is reduced by 63%, and similar performance is realized. In fig. 11, the abscissa represents the frequency, and the ordinate represents the amplitude of the S parameter; in fig. 12, the abscissa represents frequency, and the ordinate represents phase difference between two output ports of the coupler.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
It should be noted that the terms "first \ second \ third" referred to in the embodiments of the present application merely distinguish similar objects, and do not represent a specific ordering for the objects, and it should be understood that "first \ second \ third" may exchange a specific order or sequence when allowed. It should be understood that "first \ second \ third" distinct objects may be interchanged under appropriate circumstances such that the embodiments of the application described herein may be implemented in an order other than those illustrated or described herein.
The terms "comprising" and "having" and any variations thereof in the embodiments of the present application are intended to cover non-exclusive inclusions. For example, a process, method, apparatus, product, or device that comprises a list of steps or modules is not limited to the listed steps or modules but may alternatively include other steps or modules not listed or inherent to such process, method, product, or device.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A multilayer slow-wave transmission line is characterized by comprising a dielectric substrate (1), a transmission line (2), metal branches (3), metal strips (4) and metal through holes (5);
the transmission line (2) and the metal branch (3) are positioned on one plane of the dielectric substrate (1), and the metal branch (3) is vertically connected with the transmission line (2);
the metal strip (4) is of a multilayer structure, one layer of the metal strip (4) where the transmission line (2) is located is connected with the metal branch (3), and other layers of the metal strip (4) except the layer where the transmission line (2) is located are connected with the metal branch (3) through the metal through hole (5); the structure between the metal branch knot (3) and the metal strip (4) is an interdigital structure;
the dielectric substrate (1) is used for fixing or supporting the transmission line (2), the metal branches (3), the metal strips (4) and the metal through holes (5).
2. The multi-layer slow wave transmission line of claim 1, further comprising a metal ground (6), wherein the metal ground (6) is used to provide a ground terminal for the multi-layer slow wave transmission line.
3. The multilayer slow wave transmission line according to claim 2, characterized in that the transmission line (2) and the metal stub (3) are on different layers from the metal ground (6).
4. The multilayer slow wave transmission line of claim 2, wherein the metal ground (6) is a monolithic metal ground or a slotted metal ground.
5. The multi-layer slow wave transmission line according to claim 1, characterized in that the metal stubs (3), the metal strips (4) and the metal vias (5) are periodically distributed.
6. The multilayer slow-wave transmission line according to claim 5, characterized in that the propagation constant of the multilayer slow-wave transmission line becomes larger as the distance between the metal stubs (3) becomes larger.
7. The multilayer slow wave transmission line of claim 1, characterized in that the length of the metal stub (3) is greater than or equal to the width of the metal strip (4).
8. The multilayer slow wave transmission line according to any one of claims 1 to 7, characterized in that the propagation constant of the multilayer slow wave transmission line increases with the number of layers of the metal strips (4).
9. The multilayer slow wave transmission line according to any one of claims 1 to 7, characterized in that the propagation constant of the multilayer slow wave transmission line increases as the length of the metal stub (3) increases.
10. The multilayer slow wave transmission line according to any one of claims 1 to 7, characterized in that the propagation constant of the multilayer slow wave transmission line becomes larger as the length of the metal strip (4) becomes larger; or the propagation constant of the multilayer slow-wave transmission line is increased along with the increase of the width of the metal strip (4).
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| CN112216941B (en) * | 2020-09-30 | 2021-12-14 | 东南大学 | Tensile reconfigurable artificial surface plasmon transmission line |
| CN116190965A (en) * | 2022-12-21 | 2023-05-30 | 东南大学 | Slow wave lange coupler chip |
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