CN111223988B - Perovskite photovoltaic device modified by phosphate molecules and preparation method and application thereof - Google Patents
Perovskite photovoltaic device modified by phosphate molecules and preparation method and application thereof Download PDFInfo
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Abstract
A perovskite photovoltaic device modified by phosphate radical molecules, a preparation method and application thereof. According to the invention, an interface modification layer containing phosphate radical molecules is introduced into the interface layer of the perovskite photovoltaic device by means of organic phosphoric acid molecules, and the perovskite photoactive layer in the perovskite photovoltaic device is modified, so that the surface defects of the perovskite active layer are passivated, the transmission efficiency of electrons and holes at the interface of the device is improved, and the perovskite photovoltaic device with high photoelectric conversion efficiency and high stability is realized. The invention passivates interface defects in perovskite photovoltaic devices. The perovskite photovoltaic device modified by the phosphate radical-containing molecules prepared by the method is environment-friendly and low in energy consumption.
Description
Technical Field
The invention belongs to the field of photovoltaic device materials, and relates to a phosphate radical molecule modified perovskite photovoltaic device and a preparation method and application thereof.
Background
The demand of modern society for energy is increasing day by day, and traditional fossil energy reserves are limited, and the day that is spent is always spent, and its chemical combustion release energy's process has caused very big pollution to the environment in addition, influences the ecological environment of earth and human physical and mental health, and for the long-term development of mankind, it is more and more urgent to seek new clean energy. The sun is used as an energy source of the earth, and the solar energy is inexhaustible for the life length of people. Therefore, the research on the absorption and utilization of solar energy has extremely important significance for the life and long-term development of human beings.
Inorganic silicon solar cells are the most widely used solar cells in the market at present, and as early as the 50 th century, the application of photovoltaic devices based on crystalline silicon to solar cells has been reported. However, the production cost is high, the process is complex, and the problems limit the wider application of the product. Following this, photovoltaic devices based on thin film polycrystalline and amorphous semiconductors, semiconductor nanoparticles, organic and metal dye complexes, organic semiconductors and like solar absorbing materials have been proposed and developed in succession. However, the efficiency of these photovoltaic materials is still difficult to compete with silicon-based solar cells (25.6%).
Organic-inorganic hybrid perovskite solar cells have rapidly emerged over the last few years. These materials are prepared from organic halides (e.g., CH) 3 NH 3 I) And metal halides (such as: pbI 2 ) Formed by compounding, having an ABX resembling perovskite 3 The structure is shown in the specification, wherein A is an organic cation, B is a metal cation, and X refers to a halogen ion. Since 2012 it was reported that the efficiency of these organic-inorganic hybrid solar cells based on perovskite structures increased from 3% to 20% in a short four years, exceeded the efficiency of organic solar cells and dye-sensitized solar cells in a short time, and was expected to reach the level of monocrystalline silicon solar energy (Lee, m.m. et al science,2012, 338. Due to the dramatic efficiency increase and the rapid development speed of perovskite solar cells, more and more researchers are investing in the development of perovskite solar cells, and more device structures and manufacturing processes are proposed in succession.
However, many problems remain to be solved in order to put perovskite solar cells into practice on a large scale. Wherein, the surface defects of the perovskite active layer in the perovskite photovoltaic device and the transmission of electrons and holes in the perovskite device are still the key factors for restricting the photoelectric conversion efficiency and the stability of the device.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a perovskite photovoltaic device modified by phosphate molecules and a preparation method and application thereof. According to the perovskite photovoltaic device, an interface modification layer of phosphate molecules is introduced into an interface layer of the perovskite photovoltaic device by means of organic molecules of phosphoric acid, and a perovskite photoactive layer in the perovskite photovoltaic device is modified, so that the surface defects of the perovskite active layer are passivated, the transmission efficiency of electrons and holes at the interface of the device is improved, and the perovskite photovoltaic device with high photoelectric conversion efficiency and high stability is realized. The method disclosed by the invention is used for passivating the interface defects in the perovskite photovoltaic device, and the prepared phosphate molecule modified perovskite photovoltaic device is environment-friendly and low in energy consumption.
The purpose of the invention is realized by the following technical scheme:
the phosphate radical molecule-modified perovskite photovoltaic device comprises a substrate electrode, a window interface layer, a phosphate radical molecule interface modification layer, a perovskite active layer, a back electrode interface layer and a back electrode which are sequentially connected; the phosphate molecule interface modification layer is prepared from a precursor containing a phosphate molecule interface material.
According to the present invention, the base electrode is at least one selected from Indium Tin Oxide (ITO) conductive glass, an ITO organic molecular polymer, a carbon thin film material (e.g., graphite, carbon paste, graphene, or graphdine), a metal thin film material (e.g., au, ag, al, or Cu), and the like, preferably Indium Tin Oxide (ITO) conductive glass.
According to the invention, the thickness of the base electrode is 50-1000nm.
According to the invention, the window interface layer is prepared from a precursor of a window interface material selected from PEDOT PSS (polyethylenedioxythiophene-poly (styrenesulfonate)), P3CT-Li (poly [3- (4-carboxybutyl) thiophene-2, 5-diyl)]Lithium salt), P3CTS (poly [3- (4-carboxybutyl) thiophene-2, 5-diyl)]Sodium salt), P3CT-K (poly [3- (4-carboxybutyl) thiophene-2, 5-diyl)]Potassium salt), P3CT-CH 3 NH 3 (Poly [3- (4-carboxybutyl) thiophene-2, 5-diyl)]Ammonium salt), planar TiO 2 Plane TiO 2 2 Adding mesoporous TiO 2 、SnO 2 At least one of C film and ZnO, preferably P3CTS. The precursor of the window interface material may be in the form of at least one of a solution, a colloid, a suspension, a powder, a solid block, or the like of the window interface material, and is preferably a solution.
According to the invention, the thickness of the window interface layer is 5-500nm, preferably 10-150nm, for example 20nm.
According to the invention, the phosphate-containing molecular interface material is selected from phosphate-containing molecules, such as at least one of sodium phytate dodecahydrate (PAS), D-glucose 6-disodium phosphate hydrate (DG 6P), phosphoric acid and the like, and is preferably sodium phytate dodecahydrate (PAS). The precursor of the phosphate-containing molecular interface material can be in the form of at least one of a solution, a colloid, a suspension, a powder, a solid block and the like of the phosphate-containing molecular interface material, and is preferably a solution.
According to the invention, the thickness of the interface modification layer containing phosphate molecules is 1-20nm, preferably 5-15nm, for example 10nm.
According to the invention, the perovskite active layer is prepared from a precursor of a perovskite active material selected from methylamine lead iodide (CH) 3 NH 3 PbI 3 Also known as MAPbI 3 )、CH 2 NHNH 2 PbI 3 (CH 3 NH 3 PbI 3 Also known as MAPbI 3 ) At least one of organic-inorganic hybrid perovskite or pure-inorganic perovskite such as methylamine formamidine lead iodine, cesium lead bromine, formamidine methylamine lead iodine-and formamidine methylamine cesium lead iodine-bromine, preferably CH 3 NH 3 PbI 3 . The precursor of the perovskite active material may be in the form of at least one of a solution, a colloid, a suspension, a powder, a solid block, or the like of the perovskite active material, and is preferably a solution.
According to the invention, the thickness of the perovskite active layer is 50-1000nm, preferably 200-600nm, for example 400nm.
According to the invention, the back electrode interface layer is prepared from a precursor of a back electrode interface material selected from the group consisting of PCBM, ITIC, ITCC, PCDBT, C 60 And BCP, preferably PCBM, C 60 And a BCP. The precursor of the back electrode interface material can be in the form of at least one of solution, colloid, suspension, powder or solid block of the back electrode interface material, and the like, and the precursor is preferably in the form of solution, colloid, suspension, powder or solid block of the back electrode interface materialAs a solution and/or powder.
According to the invention, the thickness of the back electrode interface layer is 10-300nm, such as 20-120nm, such as 50nm.
According to the invention, the back electrode is selected from at least one of Au, ag, cu, al or carbon black, preferably Ag.
According to the invention, the thickness of the back electrode is 10-200nm, preferably 100nm.
The invention also provides a preparation method of the perovskite photovoltaic device modified by the phosphate molecules, which comprises the following steps:
(1) Coating a precursor of a window interface material on the substrate electrode to prepare a window interface layer;
(2) Coating a precursor of the phosphate-containing molecular interface material on the substrate electrode-window interface in the step (1) to prepare a phosphate-containing molecular interface modification layer;
(3) Coating a precursor of the perovskite active material on the substrate electrode-window interface-phosphate radical molecule interface in the step (2) to prepare a perovskite active layer;
(4) Coating a precursor of a back electrode interface material on the substrate electrode-window interface-phosphate radical molecule-containing interface-perovskite active layer in the step (3) to prepare a back electrode interface layer;
(5) And (4) coating a back electrode material on the substrate electrode-window interface-phosphate radical molecule-containing interface-perovskite active layer-back electrode interface in the step (4) to prepare a back electrode, namely preparing the phosphate radical molecule modified perovskite photovoltaic device.
According to the invention, the coating method in the step (1) is at least one of spin coating, evaporation coating, slit coating, blade coating, screen printing or the like, preferably spin coating; the spin coating is carried out at a speed of 1000 to 8000rpm, preferably 2500 to 4000rpm, e.g. 3000rpm, for a time of 10 to 60s, e.g. 20 to 40s, e.g. 30s.
According to the invention, the step (1) further comprises annealing treatment after coating, wherein the annealing treatment temperature is 100-200 ℃, such as 150 ℃, and the annealing treatment time is 20-60min, such as 30min.
According to the present invention, the precursor of the window interface material in step (1) may be in the form of at least one of a solution, a colloid, a suspension, a powder, a solid block, and the like of the window interface material, and is preferably a solution. The solvent of the solution of the window interface material is at least one of DMF, DMSO, GBL, chlorobenzene, toluene, water, dichloromethane, chloroform and the like, and is preferably water; the concentration of the solution of the window interface material is 0.2-5mg/mL, preferably 0.5-3mg/mL, such as 1mg/mL.
According to the invention, the coating method in the step (2) is at least one of spin coating, evaporation coating, slit coating, blade coating, screen printing or the like, preferably spin coating; the spin-coating is carried out at a speed of 1000 to 8000rpm, preferably 2500 to 4000rpm, e.g. 3000rpm, for a period of 10 to 60s, e.g. 20 to 40s, e.g. 30s.
According to the invention, the step (2) further comprises annealing treatment after coating, wherein the annealing treatment temperature is 100-200 ℃, such as 150 ℃, and the annealing treatment time is 5-30min, such as 15min.
According to the invention, the interface material containing phosphate radical molecules in the step (2) is selected from molecules containing phosphate radical, such as sodium dodecyl sulfate (PAS), D-glucose 6-disodium phosphate hydrate (DG 6P) and phosphoric acid. The precursor of the phosphate molecule-containing interface modification material may be in the form of at least one of a solution, a colloid, a suspension, a powder, a solid block, or the like of the phosphate molecule-containing interface modification material, and is preferably a solution. The solvent of the solution containing the phosphate molecular interface modification material is at least one of DMF, DMSO, GBL, chlorobenzene, toluene, water, dichloromethane, chloroform and the like, and is preferably water; the concentration of the solution containing the phosphate molecule interface modification material is 0.5-20mg/mL, preferably 2-10mg/mL, such as 5mg/mL.
According to the invention, the coating method in the step (3) is at least one of spin coating, evaporation coating, slit coating, blade coating, screen printing or the like, preferably spin coating; the spin-coating is carried out at a speed of 1000 to 8000rpm, preferably 2500 to 4000rpm, e.g. 3000rpm, for a period of 10 to 60s, e.g. 20 to 40s, e.g. 30s.
According to the invention, the step (3) further comprises annealing treatment after coating, wherein the annealing treatment temperature is 60-120 ℃, such as 90 ℃, and the annealing treatment time is 5-20min, such as 8min.
According to the present invention, the precursor of the perovskite active material in the step (3) may be in the form of at least one of a solution, a colloid, a suspension, a powder, a solid block, or the like of the perovskite active material, and is preferably a solution. The solvent of the solution of the perovskite active material is at least one of DMF, DMSO, GBL, chlorobenzene, toluene, water, dichloromethane, chloroform and the like, and DMF is preferred; the concentration of the solution of the perovskite active material is 0.2 to 5mol/L, preferably 0.5 to 3mol/L, such as 1mol/L.
According to the invention, the coating method in the step (4) is at least one of spin coating, evaporation coating, slit coating, blade coating, screen printing and the like, preferably spin coating and/or evaporation coating; the spin coating is carried out at a speed of 1000 to 8000rpm, preferably 2500 to 4000rpm, e.g. 3000rpm, for a time of 10 to 60s, e.g. 15 to 40s, e.g. 20s. The temperature and time of the vapor deposition are regulated and controlled according to the thickness of the plating layer.
According to the present invention, the precursor of the back electrode interface material in the step (4) may be in the form of at least one of a solution, a colloid, a suspension, a powder, a solid block, or the like of the back electrode interface material, and preferably is a solution or a powder. The solvent of the solution of the back electrode interface material is chlorobenzene; the concentration of the solution of the back electrode interface material is 0.5-20mg/mL, preferably 5-15mg/mL, such as 10mg/mL.
According to the invention, said step (4) comprises, for example: spin-coating at least one of PCBM, ITIC, ITCC or PCDBT and the like on the substrate electrode-window interface-phosphate radical molecule interface-perovskite active layer in the step (3) to form a passivation material layer, and evaporating C on the passivation material layer 60 And/or BCP, and preparing the back electrode interface layer. Preferably, said C 60 And/or the thickness of BCP is 5-15nm, such as C 60 The thickness of (3) was 15nm and the thickness of BCP was 10nm.
According to the invention, the coating method in the step (5) is at least one of spin coating, evaporation coating, slit coating, blade coating, screen printing and the like, preferably evaporation coating; the thickness of the back electrode is 10-200nm, preferably 100nm.
Illustratively, when the precursor of the material is a solution, colloid, or suspension thereof, a coating method such as spin coating, slit coating, blade coating, or screen printing is preferably employed; when the precursor of the material is a powder or a solid block thereof, a coating method such as vapor deposition is preferably used.
The invention also provides a perovskite photovoltaic device modified by the phosphate molecules prepared by the method.
The invention also provides application of the perovskite photovoltaic device modified by the phosphate molecules, and the perovskite photovoltaic device modified by the phosphate molecules can be used in the fields of photovoltaic devices, light Emitting Diodes (LEDs), photodetectors and the like.
Compared with the existing perovskite photovoltaic device, the invention has the following beneficial effects:
1. the invention discloses a perovskite photovoltaic device modified by phosphate radical molecules and a preparation method and application thereof for the first time, and the device is simple in preparation method and low in cost;
2. in the invention, the window interface material and the phosphoric acid interface modification material can both use water as a solvent, thus reducing the damage to the environment, and the annealing process has low temperature, i.e. low energy consumption;
3. the interface modification material containing phosphate radical molecules prepared by the invention can effectively passivate the defects on the surface of perovskite, reduce the interface recombination of perovskite photovoltaic devices and improve the photoelectric conversion efficiency;
4. the photoelectric conversion efficiency of the perovskite photovoltaic device modified by the phosphate molecules can reach 19.9%, while the photoelectric conversion efficiency of the perovskite photovoltaic device not modified by the phosphate molecules is 17.3%, so that the photoelectric conversion efficiency of the perovskite photovoltaic device is remarkably improved;
5. the stability of the perovskite photovoltaic device modified by the phosphate molecules prepared by the method is obviously improved.
Drawings
Fig. 1 is the I-V curves for the perovskite photovoltaic devices modified with and without DG6P phosphate-containing molecule DG6P of example 2.
Fig. 2 is an I-V curve for the perovskite photovoltaic device modified with and without PAS modification of the phosphate-containing molecule PAS of example 3.
Detailed Description
The preparation process of the present invention will be described in further detail with reference to specific examples. It is to be understood that the following examples are only illustrative and explanatory of the present invention and should not be construed as limiting the scope of the present invention. All the technologies realized based on the above-mentioned contents of the present invention are covered in the protection scope of the present invention.
The experimental methods used in the following examples are all conventional methods unless otherwise specified; reagents, materials and the like used in the following examples are commercially available unless otherwise specified.
Example 1
The invention provides a phosphate radical molecule modified perovskite photovoltaic device and a preparation method thereof, wherein the preparation method comprises the following steps:
(1) Taking ITO conductive glass as a substrate (the thickness is 50 nm), spin-coating 1mg/mL P3CTS aqueous solution on the ITO conductive glass, wherein the spin-coating rotation speed is 3000rpm, the spin-coating time is 30s, annealing is carried out at 150 ℃ for 30min after the spin-coating is finished, and the thickness of a P3CTS layer is 20nm;
(2) Spin-coating 5mg/mL PAS aqueous solution on the ITO-P3CTS obtained in the step (1), wherein the spin-coating rotation speed is 3000rpm, the spin-coating time is 30s, annealing is carried out at 150 ℃ for 15min after the spin-coating is finished, and the thickness of a PAS layer is 10nm;
(3) 1M CH 3 NH 3 PbI 3 Spin-coating the perovskite solution on the ITO-P3CTS-PAS obtained in the step (2), wherein the spin-coating speed is 3000rpm, the spin-coating time is 30s, annealing is carried out for 8min at 90 ℃ after the spin-coating is finished, and the thickness of the perovskite layer is 400nm;
(4) Spin-coating 10mg/mL PCBM chlorobenzene solution on the ITO-P3 CTS-PAS-perovskite obtained in the step (3), wherein the spin-coating rotation speed is 3000rpm, the spin-coating time is 20s, the thickness of the PCBM layer is 50nm, and then sequentially evaporating 15nm C 60 、10nm BCP；
(5) The ITO-P3 CTS-PAS-perovskite-PCBM-C obtained in the step (4) 60 A 100nm Ag electrode is vapor-plated on the BCP to prepare a PAS modified perovskite solar photovoltaic device, and the photovoltaic device is subjected to corresponding photoelectric propertiesAnd (5) characterizing.
Example 2
The invention provides a phosphate radical molecule modified perovskite photovoltaic device and a preparation method thereof, wherein the preparation method comprises the following steps:
(1) Taking ITO conductive glass as a substrate (the thickness is 200 nm), spin-coating 1mg/mL P3CTS aqueous solution on the ITO conductive glass, wherein the spin-coating rotation speed is 3000rpm, the spin-coating time is 20s, annealing at 150 ℃ is performed for 20min after the spin-coating is finished, and the thickness of a P3CTS layer is 50nm;
(2) Spin-coating 5mg/mL DG6P aqueous solution on the ITO-P3CTS obtained in the step (1), wherein the spin-coating speed is 4000rpm, the spin-coating time is 20s, annealing is performed at 150 ℃ for 20min after the spin-coating is completed, and the thickness of a DG6P layer is 5nm;
(3) 1M CH 3 NH 3 PbI 3 Spin-coating the perovskite solution on the ITO-P3CTS-DG6P obtained in the step (2), wherein the spin-coating speed is 3000rpm, the spin-coating time is 30s, annealing is carried out for 8min at 90 ℃ after the spin-coating is finished, and the thickness of the perovskite layer is 200nm;
(4) Spin-coating 10mg/mL PCBM chlorobenzene solution on the ITO-P3CTS-DG 6P-perovskite obtained in the step (3), wherein the spin-coating rotation speed is 3000rpm, the spin-coating time is 20s, and then sequentially evaporating 15nm C 60 10nm BCP, the thickness of the PCBM layer is 80nm;
(5) The ITO-P3CTS-DG 6P-perovskite-PCBM-C obtained in the step (4) 60 And (4) evaporating and plating a 100nm Ag electrode on the BCP to prepare a DG6P modified perovskite solar photovoltaic device, and performing corresponding photoelectric property characterization on the photovoltaic device.
Fig. 1 shows an I-V curve of a perovskite photovoltaic device modified by phosphate molecules DG6P under sunlight, and compared with a perovskite photovoltaic device not modified by DG6P, the larger the area of the coordinate axis of the I-V curve is, the higher the surface photoelectric conversion efficiency is, and it can be seen in the figure that the photoelectric conversion efficiency of the perovskite photovoltaic device is obviously improved by the modification by DG 6P.
Example 3
The invention provides a phosphate radical molecule modified perovskite photovoltaic device and a preparation method thereof, wherein the preparation method comprises the following steps:
(1) Taking ITO conductive glass as a substrate (the thickness is 500 nm), spin-coating 10mg/mL P3CTS aqueous solution on the ITO conductive glass, wherein the spin-coating rotation speed is 3000rpm, the spin-coating time is 30s, annealing is carried out for 30min at 150 ℃ after the spin-coating is finished, and the thickness of a P3CTS layer is 100nm;
(2) Spin-coating 10mg/mL PAS aqueous solution on the ITO-P3CTS obtained in the step (1), wherein the spin-coating rotation speed is 8000rpm, the spin-coating time is 60s, annealing is carried out for 30min at 200 ℃ after the spin-coating is finished, and the thickness of a PAS layer is 15nm;
(3) Reacting 3M CH 3 NH 3 PbI 3 The perovskite solution is coated on the ITO-P3CTS-PAS obtained in the step (2) in a spinning mode, the spinning speed is 3000rpm, the spinning time is 30s, annealing is carried out for 8min at 90 ℃ after the spinning is finished, and the thickness of a perovskite layer is 600nm;
(4) Spin-coating 30mg/mL PCBM chlorobenzene solution on the ITO-P3 CTS-PAS-perovskite obtained in the step (3), wherein the spin-coating rotation speed is 3000rpm, the spin-coating time is 20s, the thickness of the PCBM layer is 100nm, and then sequentially evaporating 15nm C 60 、10nm BCP；
(5) The ITO-P3 CTS-PAS-perovskite-PCBM-C obtained in the step (4) 60 And (4) evaporating and plating a 200nm Ag electrode on BCP to prepare a PAS modified perovskite solar photovoltaic device, and performing corresponding photoelectric property characterization on the photovoltaic device.
Fig. 2 shows an I-V curve of a perovskite photovoltaic device modified by a phosphate molecule PAS under sunlight, and compared with a perovskite photovoltaic device which is not modified by PAS, the larger the area of the coordinate axis of the I-V curve is, the higher the surface photoelectric conversion efficiency is, and it can be seen in the figure that the photoelectric conversion efficiency of the perovskite photovoltaic device is obviously improved by PAS modification (the photoelectric conversion efficiency PCE = 19.9%).
In conclusion, the perovskite photovoltaic device modified by the phosphate radical-containing molecules prepared by the method is environment-friendly and low in energy consumption, can effectively reduce the defects of the interface of the perovskite photovoltaic device, improves the crystallinity of the perovskite photoactive layer, improves the photoelectric conversion efficiency of the perovskite photovoltaic device, and improves the stability of the device.
The applicant states that the present invention is illustrated in detail by the above examples, but the present invention is not limited to the above detailed methods, i.e. it is not meant that the present invention must rely on the above detailed methods for its implementation. It should be understood by those skilled in the art that any modifications of the present invention, equivalent substitutions of the raw materials of the product of the present invention, and the addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
Claims (43)
1. The perovskite photovoltaic device modified by phosphate radical molecules comprises a substrate electrode, a window interface layer, a phosphate radical molecule interface modification layer, a perovskite active layer, a back electrode interface layer and a back electrode which are sequentially connected; the phosphate radical molecule interface modification layer is prepared from a precursor containing a phosphate radical molecule interface material;
the phosphate radical molecule-containing interface material is selected from molecules containing phosphate radicals, and the molecules containing the phosphate radicals are selected from at least one of sodium dodecyl sulfate, D-glucose 6-disodium phosphate hydrate or phosphoric acid.
2. The phosphate molecule-modified perovskite photovoltaic device of claim 1, wherein the substrate electrode is selected from at least one of Indium Tin Oxide (ITO) conductive glass, organic molecular polymers, carbon thin film materials, and metal thin film materials.
3. The phosphate molecule modified perovskite photovoltaic device of claim 1 or 2, wherein the substrate electrode has a thickness of 50-1000nm.
4. The phosphate molecule-modified perovskite photovoltaic device of claim 1, wherein the window interface layer is prepared from a precursor of a window interface material selected from the group consisting of PEDOT: PSS (polyethylenedioxythiophene-poly (styrenesulfonate)), P3CT-Li (poly [3- (4-carboxybutyl) thiophene-2, 5-diyl)]Lithium salt), P3CTS (poly [3- (4-carboxybutyl) thiophene-2, 5-diyl)]Sodium salt), P3CT-K (poly [3- (4-carboxybutyl) thiophene-2, 5-diyl)]Potassium salt), P3CT-CH 3 NH 3 (Poly [3- (4-carboxybutyl) thiophene-2, 5-diyl)]Ammonium salt), planar TiO 2 'Ping' for preventing and curing fractureFacial TiO 2 Adding mesoporous TiO 2 、SnO 2 At least one of C film and ZnO.
5. The phosphate molecule-modified perovskite photovoltaic device of claim 1, wherein the thickness of the window interface layer is from 5 to 500nm.
6. The phosphate molecule-modified perovskite photovoltaic device of claim 5, wherein the thickness of the window interface layer is 10-150nm.
7. The phosphate molecule-modified perovskite photovoltaic device of claim 1, wherein the thickness of the phosphate molecule interface modification layer is 1-20nm.
8. The phosphate molecule-modified perovskite photovoltaic device of claim 7, wherein the thickness of the phosphate molecule interface modification layer is 5-15nm.
9. The phosphate molecule-modified perovskite photovoltaic device of claim 8, wherein the phosphate molecule interface modification layer has a thickness of 10nm.
10. The phosphate molecule-modified perovskite photovoltaic device of claim 1, wherein the perovskite active layer is prepared from a precursor of a perovskite active material selected from the group consisting of methylamine lead iodide, CH 2 NHNH 2 PbI 3 At least one of methylaminoformamidine lead iodide, cesium lead bromide, formamidine methylamine lead iodide bromide and formamidine methylamine cesium lead iodide bromide.
11. The phosphate molecule-modified perovskite photovoltaic device of claim 1 or 10, wherein the thickness of the perovskite active layer is from 50 to 1000nm.
12. The phosphate molecule-modified perovskite photovoltaic device of claim 11, wherein the thickness of the perovskite active layer is 200-600nm.
13. The phosphate molecule-modified perovskite photovoltaic device of claim 12, wherein the thickness of the perovskite active layer is 400nm.
14. The phosphate molecule-modified perovskite photovoltaic device of claim 1, wherein the back electrode interface layer is prepared from a precursor of a back electrode interface material selected from the group consisting of PCBM, ITIC, ITCC, PCDBT, C 60 And a BCP.
15. The phosphate molecule modified perovskite photovoltaic device of claim 1 or 14, wherein the thickness of the back electrode interfacial layer is from 10 to 300nm.
16. The phosphate molecule-modified perovskite photovoltaic device of claim 15, wherein the thickness of the back electrode interfacial layer is 20-120nm.
17. The phosphate molecule-modified perovskite photovoltaic device of claim 16, wherein the thickness of the back electrode interfacial layer is 50nm.
18. The phosphate molecule-modified perovskite photovoltaic device of claim 1, wherein the back electrode is selected from at least one of Au, ag, cu, al or carbon black.
19. The phosphate molecule-modified perovskite photovoltaic device of claim 1 or 18, wherein the back electrode has a thickness of 10-200 nm.
20. The phosphate molecule-modified perovskite photovoltaic device of claim 19, wherein the back electrode has a thickness of 100nm.
21. A method of preparing a phosphate molecule modified perovskite photovoltaic device as claimed in any one of claims 1 to 20 comprising the steps of:
(1) Coating a precursor of a window interface material on the substrate electrode to prepare a window interface layer;
(2) Coating a precursor of a phosphate radical molecule interface-containing material on the substrate electrode-window interface in the step (1) to prepare a phosphate radical molecule interface modification layer;
(3) Coating a precursor of the perovskite active material on the substrate electrode-window interface-phosphate molecule interface in the step (2) to prepare a perovskite active layer;
(4) Coating a precursor of a back electrode interface material on the substrate electrode-window interface-phosphate molecule interface-perovskite active layer in the step (3) to prepare a back electrode interface layer;
(5) And (4) coating a back electrode material on the substrate electrode-window interface-phosphate molecule interface-perovskite active layer-back electrode interface in the step (4) to prepare a back electrode, namely preparing the phosphate molecule modified perovskite photovoltaic device.
22. The production method according to claim 21, wherein the coating method in the step (1) is at least one of spin coating, evaporation, slit coating, blade coating, or screen printing; the rotating speed of the spin coating is 1000-8000rpm, and the time of the spin coating is 10-60s.
23. The preparation method according to claim 21, wherein the step (1) further comprises a post-coating annealing treatment, the temperature of the annealing treatment is 100-200 ℃, and the time of the annealing treatment is 20-60min.
24. The preparation method according to claim 21, wherein the precursor of the window interface material in the step (1) is in the form of at least one of a solution, a colloid, a suspension, a powder or a solid block of the window interface material.
25. The production method according to claim 24, wherein the solvent of the solution of the window interface material is at least one of DMF, DMSO, GBL, chlorobenzene, toluene, water, dichloromethane, chloroform; the concentration of the solution of the window interface material is 0.2-5 mg/mL.
26. The production method according to claim 21, wherein the coating method in the step (2) is at least one of spin coating, evaporation, slit coating, blade coating, or screen printing; the rotating speed of the spin coating is 1000-8000rpm, and the time of the spin coating is 10-60s.
27. The preparation method according to claim 21, wherein the step (2) further comprises a post-coating annealing treatment, the temperature of the annealing treatment is 100-200 ℃, and the time of the annealing treatment is 5-30min.
28. The preparation method according to claim 21, wherein the phosphate molecule interface material in the step (2) is a molecule having a phosphate group at one end, and is at least one selected from the group consisting of sodium dodecyl sulfate (PAS), D-glucose 6-phosphate disodium salt hydrate, and phosphoric acid.
29. The method of claim 21, wherein the precursor of the phosphate-containing molecular interface modification material is in the form of at least one of a solution, a colloid, a suspension, a powder, or a solid block of the phosphate-containing molecular interface modification material.
30. The production method according to claim 29, wherein the solvent of the solution containing the phosphate molecular interface modification material is at least one of DMF, DMSO, GBL, chlorobenzene, toluene, water, dichloromethane, chloroform; the concentration of the solution containing the phosphate radical molecular interface modification material is 0.5-20mg/mL.
31. The production method according to claim 21, wherein the coating method in the step (3) is at least one of spin coating, evaporation, slit coating, blade coating, or screen printing; the rotating speed of the spin coating is 1000-8000rpm, and the time of the spin coating is 10-60s.
32. The method according to claim 21, wherein the step (3) further comprises a post-coating annealing treatment, the annealing treatment temperature is 60-120 ℃, and the annealing treatment time is 5-20min.
33. The production method according to claim 21, wherein the precursor of the perovskite active material in the step (3) is in the form of at least one of a solution, a colloid, a suspension, a powder, or a solid block of the perovskite active material.
34. The production method according to claim 33, wherein a solvent of the solution of the perovskite active material is at least one of DMF, DMSO, GBL, chlorobenzene, toluene, water, dichloromethane, chloroform; the concentration of the solution of the perovskite active material is 0.2-5 mol/L.
35. The production method according to claim 21, wherein the coating method in the step (4) is at least one of spin coating, evaporation, slit coating, blade coating, or screen printing; the rotating speed of the spin coating is 1000-8000rpm, and the time of the spin coating is 10-60s.
36. The method for preparing a solar cell according to claim 21, wherein the precursor of the back electrode interface material in step (4) is in the form of at least one of a solution, a colloid, a suspension, a powder or a solid block of the back electrode interface material.
37. The production method according to claim 36, wherein a solvent of the solution of the back electrode interface material is chlorobenzene; the concentration of the solution of the back electrode interface material is 0.5-20mg/mL.
38. The production method according to claim 21, wherein the step (4) includes: spin-coating at least one of PCBM, ITIC, ITCC or PCDBT on the substrate electrode-window interface-phosphate molecule interface-perovskite active layer in the step (3) to form a passivation material layer, and evaporating C on the passivation material layer 60 And/or BCP, and preparing the back electrode interface layer.
39. The method of claim 38, wherein C is 60 And/or the thickness of BCP is 5-15nm.
40. The method of claim 38, wherein C is 60 The thickness of (3) was 15nm and the thickness of BCP was 10nm.
41. The production method according to claim 21, wherein the coating method in the step (5) is at least one of spin coating, evaporation, slit coating, blade coating, or screen printing; the thickness of the back electrode is 10-200 nm.
42. A phosphate molecule modified perovskite photovoltaic device prepared by the method of any one of claims 21 to 41.
43. Use of a phosphate molecule modified perovskite photovoltaic device as defined in any one of claims 1 to 20, 42 in the field of photovoltaics, light emitting diodes or photodetectors.
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