CN111220832A - Overvoltage detection sensor processing method and overvoltage detection sensor - Google Patents
Overvoltage detection sensor processing method and overvoltage detection sensor Download PDFInfo
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- CN111220832A CN111220832A CN202010040196.2A CN202010040196A CN111220832A CN 111220832 A CN111220832 A CN 111220832A CN 202010040196 A CN202010040196 A CN 202010040196A CN 111220832 A CN111220832 A CN 111220832A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
- G01R19/16576—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 comparing DC or AC voltage with one threshold
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The invention discloses an overvoltage detection sensor processing method and an overvoltage detection sensor, wherein the method comprises the following steps: placing a substrate in a closed container, and introducing silane into the closed container under a preset temperature condition to thermally decompose the silane on the surface of the substrate to obtain silicon on the surface of the substrate; introducing oxygen into the closed container to enable the silicon and the oxygen to react and form an intermediate medium of a silicon dioxide film on the surface of the substrate, so as to obtain an upper polar plate and a lower polar plate; splicing the upper polar plate and the lower polar plate to obtain a wafer; and spraying aluminum on two sides of the wafer, and packaging into a sensor shell to obtain the overvoltage detection sensor. According to the embodiment of the invention, the silicon oxide film is grown on the substrate, so that the thin film intermediate medium with small enough thickness is automatically formed between the two electrodes, and compared with the traditional method of forming the low-voltage arm capacitor by manually adhering the thin film on the surface of the electrode, the method not only reduces the processing difficulty, but also can ensure the consistency of the performance of the prepared capacitive sensor.
Description
Technical Field
The invention relates to the technical field of overvoltage protection, in particular to an overvoltage detection sensor and a processing method thereof.
Background
During the operation of an electric power system, various overvoltages can be generated due to lightning strikes on lines or equipment, the electrical operation of workers, the design defects or parameter configuration errors of the equipment, and the like, and the overvoltages can cause the insulation damage of weak insulation parts in the electric power system, cause short circuit or ground fault, cause accelerated aging of the equipment, prolong response time and reduce performance, and cause the equipment to be burned out in severe cases to cause power failure of local systems.
At present, a high-voltage pulse measuring device is mainly installed in an operating power system to realize overvoltage detection. The most important equipment in the high-voltage pulse measuring device is a voltage divider, the voltage level of the voltage divider in the high-voltage pulse measuring device is changed from tens of kilovolts to several megavolts, the pulse front edge is changed from ns to us level, the pulse duration is also changed from ns to ms in a large range, the voltage division ratio is high, the frequency band of the voltage divider also can reach enough width, and meanwhile, the voltage divider should not influence the distribution of the measured equipment and the surrounding field. This requires the size of the voltage divider to be sufficiently small. Capacitive sensors are often used as voltage dividers in high-voltage pulse measurement devices.
The existing capacitive sensor is optimized in some parts to realize partial functions, and has limitations. For example, some domestic scholars research sensors for measuring very fast transient overvoltage, the measurement bandwidth of the sensors is generally wide and basically meets the measurement requirements of gas insulated switchgear, but the sensors are complex in structure, and the capacitive sensors are external additional structures, so that the sensors are very inconvenient to install and use, and poor in safety and stability. The low-voltage arm capacitor widely used at present as a capacitive sensor can provide a large voltage division ratio and a fast response time, but the processing of the low-voltage arm capacitor is a difficult technique, and some experts and scholars adhere a layer of synthetic plastic film on a flat electrode surface to form the low-voltage arm capacitor, the low-voltage arm capacitor is often manually completed by experienced engineers, and the consistency of the performance of the capacitive sensor is difficult to ensure.
Disclosure of Invention
The embodiment of the invention provides an overvoltage detection sensor processing method and an overvoltage detection sensor, and aims to solve the problems that the processing of a traditional low-voltage arm capacitor is a difficult technology, and some experts and scholars adhere a layer of synthetic plastic film on the surface of a flat electrode to form a low-voltage arm capacitor, the low-voltage arm capacitor is often manually finished by experienced engineers, and the consistency of the performance of a capacitive sensor is difficult to ensure.
In one aspect, an embodiment of the present invention provides a method for processing an overvoltage detection sensor, where the method includes:
placing a substrate in a closed container, and introducing silane into the closed container under a preset temperature condition to thermally decompose silane on the surface of the substrate to obtain silicon on the surface of the substrate; introducing oxygen into the closed container to enable silicon and the oxygen to react and form an intermediate medium of a silicon dioxide film on the surface of the substrate, so as to obtain an upper polar plate and a lower polar plate; splicing the upper polar plate and the lower polar plate to obtain a wafer; and spraying aluminum on two sides of the wafer by using a metal spraying method, and packaging into a sensor shell to obtain the overvoltage detection sensor.
In combination with one aspect, in a first possible implementation manner, the preset temperature is 400 to 500 ℃.
In a second possible implementation manner, in combination with one aspect, the thickness of the silicon dioxide thin film is 2 μm.
In combination with one aspect, in a third possible implementation manner, nitrogen is also introduced into the closed container while introducing oxygen into the closed container.
With reference to one aspect, in a fourth possible implementation manner, after aluminum is sprayed on both sides of a wafer by using a metallization method, the method further includes: the wafer after spraying aluminum was sintered at a temperature of 450 c for 20 min.
With reference to the above aspect, in a fifth possible implementation manner, after introducing oxygen into the sealed container to react silicon with the oxygen and form a silicon dioxide thin film on a surface of the substrate, the method further includes: and annealing the substrate with the surface formed with the nitrogen dioxide film for 1h under the temperature condition of 950-1050 ℃ and the nitriding condition.
In a second aspect, an embodiment of the present invention provides an overvoltage detection sensor, which is manufactured by using any one of the first possible implementation manner to the fifth possible implementation manner, and the overvoltage detection sensor includes: the sensor comprises an upper polar plate, a middle medium, a lower polar plate and a sensor shell, wherein the upper polar plate, the middle medium and the lower polar plate are arranged inside the sensor shell from top to bottom in sequence.
With reference to the second aspect, in a sixth possible implementation manner, the upper plate, the intermediate medium, and the lower plate are all conical.
As can be seen from the above embodiments, the method comprises: placing a substrate in a closed container, and introducing silane into the closed container under a preset temperature condition to thermally decompose silane on the surface of the substrate to obtain silicon on the surface of the substrate; introducing oxygen into the closed container to enable silicon and the oxygen to react and form an intermediate medium of a silicon dioxide film on the surface of the substrate, so as to obtain an upper polar plate and a lower polar plate; splicing the upper polar plate and the lower polar plate to obtain a wafer; and spraying aluminum on two sides of the wafer by using a metal spraying method, and packaging into a sensor shell to obtain the overvoltage detection sensor. According to the embodiment of the invention, the silicon oxide film is grown on the substrate, so that the thin film intermediate medium with small enough thickness is automatically formed between the two electrodes, and compared with the traditional method of forming the low-voltage arm capacitor by manually adhering the thin film on the surface of the electrode, the method not only reduces the processing difficulty, but also can ensure the consistency of the performance of the prepared capacitive sensor.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts. The above and other objects, features and advantages of the present invention will become more apparent from the accompanying drawings. Like reference numerals refer to like parts throughout the drawings. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention.
Fig. 1 is a schematic diagram illustrating an actual measurement process of an overvoltage detection sensor according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the equivalent measurement principle of FIG. 1;
fig. 3 is a schematic flow chart of a processing method of the overvoltage detection sensor according to the embodiment of the invention;
fig. 4 is a schematic structural diagram of an over-current detection sensor according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a schematic diagram of an actual measurement process of the overvoltage detection sensor is shown. The overvoltage detection device comprises a measured object 1, a stray capacitor 2, an overvoltage detection sensor 3, a transmission line 4 and a signal processing terminal 5, wherein the stray capacitor 2 is connected between the overvoltage detection sensor 3 and the measured object 1, and the overvoltage detection sensor 3 is connected with the signal processing terminal 5 through the transmission line 4. The object 1 is a device or a circuit system to be monitored for the presence or absence of an overvoltage, and the stray capacitance 2 is a capacitance formed in a space between the overvoltage detection sensor 3 and the object 1. The stray capacitance is equivalent to an interference capacitance, and C2 needs to be made as large as possible in order to avoid its interference as much as possible. Fig. 2 is an equivalent measurement schematic diagram of fig. 1. Specifically, the capacitance value of the stray capacitor 2 is C1, the capacitance value of the overvoltage detection sensor 3 is C2, the monitored voltage value of the measured object end is U1, and the monitored voltage division value of the overvoltage detection sensor 3 is U2, and according to an equivalent measurement principle diagram, a formula can be obtained
In order to obtain a high voltage division ratio without the influence of the overvoltage detection sensor 3 on the measured device and the distribution of the ambient field, the capacitance C2 of the overvoltage detection sensor 3 needs to be large enough and small enough. And calculating formula according to the capacitance of the plate capacitor
Where ε is the dielectric constant of the bipolar plate material, and S is the area of the parallel plate capacitor plane and d is the separation between the two plates, not considered here. In order to satisfy the requirement of sufficiently small size, S needs to be sufficiently small, and in order to satisfy the requirement of sufficiently large capacitance C2, only by limiting the distance between the two platesI.e. the magnitude of the value of d. Therefore, the intermediate medium is designed to have a size of C2 which can reduce the d value to the maximum extent and increase the d value to the maximum limit.
Referring to fig. 3, a schematic flow chart of a processing method of the overvoltage detection sensor of the present invention is shown, the method includes the following steps:
step S101: placing a substrate in a closed container, and introducing silane into the closed container under a preset temperature condition to thermally decompose silane on the surface of the substrate, so as to obtain silicon on the surface of the substrate.
The substrate may be a high purity silicon wafer and since silane is flammable in air and explosive at high concentrations, the entire reaction environment must be sealed from oxygen. The decomposition temperature of silane is generally 400-500 ℃, which is much lower than that of other methods, so that the impurities introduced by high-temperature volatilization or diffusion are few. Meanwhile, the thermal decomposition formula of silane is: SiH4＝Si+2H2The decomposition products of silane are not corrosive, thereby avoiding corrosion of equipment and contamination of silicon due to corrosion. The silicon tetrachloride or trichlorosilane hydrogen reduction method can generate highly corrosive hydrogen chloride gas. After thermal decomposition of the silane, the resulting silicon monomer adheres to the surface of the substrate.
Step S102: and introducing oxygen into the closed container, so that the silicon reacts with the oxygen and an intermediate medium of the silicon dioxide film is formed on the surface of the substrate, and an upper polar plate and a lower polar plate are obtained. After introducing oxygen into the closed container to react the silicon with the oxygen and form a silicon dioxide film on the surface of the substrate, the method may further include: and annealing the substrate with the surface formed with the nitrogen dioxide film for 1h under the temperature condition of 950-1050 ℃ and the nitriding condition.
After a layer of silicon monomer is formed on the surface of the substrate, oxygen is introduced into the closed container, and because residual silane possibly exists in the closed container, nitrogen can be introduced into the closed container at the same time to dilute the silane and prevent the silane from being natural.
The silicon on the surface of the substrate is oxidized by the introduced oxygen so as to form a silicon dioxide film with a certain thickness on the surface of the substrate, and the silicon dioxide film is an intermediate medium of the capacitor. The thickness of the formed silicon dioxide film can be 2 μm, which not only can ensure the function of separating the upper polar plate and the lower polar plate, but also can ensure that the thickness is small enough to ensure that the capacitance of the whole capacitor is large enough.
Step S103: and splicing the upper polar plate and the lower polar plate to obtain the wafer.
After the last step, a layer of silicon dioxide film is generated on the whole surface of the upper polar plate and the lower polar plate, and then the upper polar plate and the lower polar plate are spliced to form a semi-finished capacitor.
Step S104: and spraying aluminum on two sides of the wafer by using a metal spraying method, and packaging into a sensor shell to obtain the overvoltage detection sensor. After the aluminum is sprayed on the two sides of the wafer by the metal spraying method, the method further comprises the following steps: the wafer after spraying aluminum was sintered at a temperature of 450 c for 20 min. The thickness of the sprayed aluminum layer may be 1 μm.
After the previous step, the intermediate medium of the silicon dioxide film between the upper polar plate and the lower polar plate is not sprayed with aluminum in the metal spraying process, and then the opposite surface of the upper polar plate and the lower polar plate is sprayed with aluminum. After the whole wafer is subjected to the spraying treatment and is packaged like a sensor shell, a finished product of the overvoltage detection sensor is obtained.
Through tests, the overvoltage detection sensor prepared by the method provided by the embodiment of the invention has the advantages of small volume (the diameter is less than 3.5cm, the thickness is less than 2mm) and wide frequency band (the frequency band is more than 30 Hz-100 MHz, the response time is faster than 10ns, and the voltage division ratio is more than 10000). The upper polar plate mainly comprises aluminum and aluminum oxide, the intermediate medium mainly comprises silicon dioxide, and the lower polar plate mainly comprises aluminum and aluminum oxide.
As can be seen from the above embodiments, the method comprises: placing a substrate in a closed container, and introducing silane into the closed container under a preset temperature condition to thermally decompose silane on the surface of the substrate to obtain silicon on the surface of the substrate; introducing oxygen into the closed container to enable silicon and the oxygen to react and form an intermediate medium of a silicon dioxide film on the surface of the substrate, so as to obtain an upper polar plate and a lower polar plate; splicing the upper polar plate and the lower polar plate to obtain a wafer; and spraying aluminum on two sides of the wafer by using a metal spraying method, and packaging into a sensor shell to obtain the overvoltage detection sensor. According to the embodiment of the invention, the silicon oxide film is grown on the substrate, so that the thin film intermediate medium with small enough thickness is automatically formed between the two electrodes, and compared with the traditional method of forming the low-voltage arm capacitor by manually adhering the thin film on the surface of the electrode, the method not only reduces the processing difficulty, but also can ensure the consistency of the performance of the prepared capacitive sensor.
On the other hand, embodiments of the present application also provide an overvoltage detection sensor, as shown in fig. 4, which is manufactured by the method of any one of claims 1 to 6, and includes: the sensor comprises an upper polar plate 6, an intermediate medium 7, a lower polar plate 8 and a sensor shell 9, wherein the upper polar plate 6, the intermediate medium 7 and the lower polar plate 8 are arranged inside the sensor shell 9 from top to bottom.
The overvoltage detection sensor of the embodiment of the application is applied to the measurement circuit shown in fig. 1, and since the intermediate medium 7 is a thin enough silicon dioxide film, the distance d between the upper plate 6 and the lower plate 8 is small enough, and a large enough capacitance value can be obtained, and a large enough voltage division ratio can be obtained in the measurement circuit shown in fig. 1. Meanwhile, the overvoltage detection sensor of the embodiment of the application has small enough S and small enough size, so that the distribution of the measurement equipment and the surrounding field cannot be influenced.
Further, the upper electrode plate 6, the intermediate medium 7 and the lower electrode plate 8 are all in a conical shape. The upper plate 6 and the lower plate 7 of the preferred embodiment are both conical, and the intermediate medium 7 is also conical because the intermediate medium 7 is generated on the surface of the substrate by thermal decomposition of silane. The conical upper electrode plate 6, the intermediate medium 7 and the lower electrode plate 8 can increase the planar area S of the plate capacitor, further increase the capacitance of the overvoltage detection sensor, and also do not increase the overall volume of the overvoltage detection sensor.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above-described embodiments of the present invention do not limit the scope of the present invention. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A method of processing an overvoltage detection sensor, the method comprising:
placing a substrate in a closed container, and introducing silane into the closed container under a preset temperature condition to thermally decompose silane on the surface of the substrate to obtain silicon on the surface of the substrate;
introducing oxygen into the closed container to enable silicon and the oxygen to react and form an intermediate medium of a silicon dioxide film on the surface of the substrate, so as to obtain an upper polar plate and a lower polar plate;
splicing the upper polar plate and the lower polar plate to obtain a wafer;
and spraying aluminum on two sides of the wafer by using a metal spraying method, and packaging into a sensor shell to obtain the overvoltage detection sensor.
2. The method according to claim 1, wherein the predetermined temperature is 400 to 500 ℃.
3. The method of claim 1, wherein the silica thin film has a thickness of 2 μm.
4. The method of claim 1, wherein the closed vessel is purged with nitrogen while purging oxygen into the closed vessel.
5. The method of claim 1, wherein after the aluminum is deposited on both sides of the wafer using a metallization process, further comprising: the wafer after spraying aluminum was sintered at a temperature of 450 c for 20 min.
6. The method of claim 1, wherein after introducing oxygen into the closed container to react the silicon with the oxygen and form a silicon dioxide film on the surface of the substrate, further comprising: and annealing the substrate with the surface formed with the nitrogen dioxide film for 1h under the temperature condition of 950-1050 ℃ and the nitriding condition.
7. An overvoltage detection sensor made by the method of any one of claims 1 to 6, said overvoltage sensor comprising: the sensor comprises an upper polar plate (6), an intermediate medium (7), a lower polar plate (8) and a sensor shell (9), wherein the upper polar plate (6), the intermediate medium (7) and the lower polar plate (8) are arranged inside the sensor shell (9) from top to bottom.
8. The overvoltage detection sensor according to claim 7, wherein the upper plate (6), the intermediate medium (7) and the lower plate (8) are each conical.
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