CN111211071A - Pressurizing device and pressure applying method - Google Patents
Pressurizing device and pressure applying method Download PDFInfo
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- CN111211071A CN111211071A CN202010026305.5A CN202010026305A CN111211071A CN 111211071 A CN111211071 A CN 111211071A CN 202010026305 A CN202010026305 A CN 202010026305A CN 111211071 A CN111211071 A CN 111211071A
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000010410 layer Substances 0.000 claims description 37
- 239000012790 adhesive layer Substances 0.000 claims description 20
- 238000003825 pressing Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- 230000006835 compression Effects 0.000 claims description 4
- 238000007906 compression Methods 0.000 claims description 4
- 230000015654 memory Effects 0.000 abstract description 23
- 238000012360 testing method Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000007334 memory performance Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 43
- 239000010408 film Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a pressurizing device and a pressure applying method. The pressurizing device includes: the pressure head is used for contacting with a sample, and a bonding layer is formed on the surface of the sample; and the air pressure component is used for applying air pressure to the pressure head so as to push the pressure head to apply pressure to the surface of the sample, which is far away from the bonding layer. According to the invention, gas is used as a pressure source, so that on one hand, the uniformity of the thickness of the cured bonding layer is improved; on the other hand, the thickness of the solidified bonding layer is convenient to be accurately controlled, so that convenience is brought to testing of the bonding energy between films in the three-dimensional memory, and the improvement of the three-dimensional memory manufacturing process and the improvement of the three-dimensional memory performance are facilitated.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a pressurizing device and a pressure applying method.
Background
With the development of the planar flash memory, the manufacturing process of the semiconductor has been greatly improved. In recent years, however, the development of planar flash memories has met with various challenges: physical limits, existing development technology limits, and storage electron density limits, among others. In this context, to solve the difficulties encountered by flat flash memories and to pursue lower production costs of unit memory cells, various three-dimensional (3D) flash memory structures, such as 3D NOR (3D NOR) flash memory and 3D NAND (3D NAND) flash memory, have come into force.
In the manufacturing process of three-dimensional memory devices such as 3D NAND memories, thin film processing is a crucial process step, and the magnitude of the binding energy between films is a very important performance parameter in thin film processing. There are several evaluation methods in the prior art to detect the magnitude of the binding energy between membranes, of which Double Cantilever Beam (DCB) is the most commonly used method. However, currently, due to the limitation of the process method, the detection accuracy of the binding energy between films is low, thereby limiting the improvement of the semiconductor process.
Therefore, how to improve the accuracy of detecting the binding energy between films and improve the performance of the three-dimensional memory is a technical problem to be solved.
Disclosure of Invention
The invention provides a pressurizing device and a pressure applying method, which are used for solving the problem of low accuracy in the process of detecting the bonding energy between membranes in the prior art, thereby improving the performance of a three-dimensional memory.
In order to solve the above problems, the present invention provides a pressurizing apparatus including:
the pressure head is used for contacting with a sample, and a bonding layer is formed on the surface of the sample;
and the air pressure assembly is used for applying air pressure to the pressure head so as to push the pressure head to apply pressure to the surface of the sample departing from the bonding layer, and the thickness of the bonding layer after curing is adjusted.
Optionally, the pneumatic assembly includes:
and a piston rod of the air cylinder is used for being connected with the pressure head.
Optionally, the cylinder includes:
the bearing plate comprises an upper surface and a lower surface opposite to the upper surface, the piston rod is used for being connected with the center of the upper surface, and the pressure head is used for being connected with the lower surface.
Optionally, the pneumatic assembly further includes:
one end of the pipeline is connected with a gas source for storing gas, and the other end of the pipeline is connected with the cylinder;
and the control switch is arranged in the pipeline and used for controlling the pressure of the gas transmitted to the cylinder.
Optionally, the pneumatic assembly further includes:
a pressure controller installed in the duct for adjusting a flow rate of the gas flowing to the cylinder.
Optionally, the pressure controller is installed between the air source and the control switch; alternatively, the first and second electrodes may be,
the pressure controller is installed between the control switch and the cylinder.
Optionally, the method further includes:
a base for carrying and heating the sample to cure the bonding layer;
a gasket for placement between the base and the sample to prevent the sample from sticking to the base.
Optionally, the method further includes:
the heat conduction shell is located the base surface, the pressure head the atmospheric pressure subassembly with the sample all is located the heat conduction shell surrounds the cavity that forms.
In order to solve the above problems, the present invention also provides a pressure applying method, comprising the steps of:
providing a sample, wherein a bonding layer is formed on the surface of the sample;
and pushing a pressure head to apply pressure to the surface of the sample, which is far away from the bonding layer, by using the gas pressure from the outside, so that the thickness of the bonding layer after curing is adjusted.
Optionally, the step of applying pressure to the surface of the sample facing away from the adhesive layer by pushing a pressure head with gas pressure from the outside comprises:
providing a cylinder, wherein a piston rod of the cylinder is connected with the surface of the pressure head, which is far away from the sample;
and conveying gas to the air cylinder, wherein the piston rod pushes the pressure head to apply pressure to the surface of the sample, which is far away from the bonding layer.
Optionally, the specific step of delivering gas to the cylinder comprises:
and adjusting the pressure of the gas transmitted to the cylinder according to the required thickness of the bonding layer after curing.
Optionally, the specific step of delivering gas to the cylinder comprises:
adjusting the flow rate of the gas such that the gas is delivered to the cylinder at a steady flow rate.
Optionally, the specific step of applying pressure to the surface of the sample away from the adhesive layer by pushing a pressure head by the gas pressure from the outside further comprises:
and heating the sample, and simultaneously pushing an indenter to apply pressure to the surface of the sample, which is far away from the bonding layer, by using the gas pressure from the outside so as to cure the bonding layer.
Optionally, the specific step of heating the sample comprises:
placing the sample on the surface of a base of a closed chamber;
heating the sample through the base.
Optionally, the method further comprises the following steps:
placing a pad on the surface of the base, and placing the sample on the surface of the pad to prevent the sample from adhering to the base.
According to the pressurizing device and the pressure applying method provided by the invention, the pressure head used for being in contact with the sample is provided, and the pressure head is pushed to apply pressure to the sample by using gas as a pressure source, so that on one hand, the uniform air pressure borne by the surface of the pressure head can be ensured by a gas pressurizing mode, the uniformity of the pressure borne by the surface of the sample is ensured, and the uniformity of the thickness of the solidified bonding layer is further improved; on the other hand, the gas pressurization mode has high pressure controllability, and is convenient for accurately controlling the thickness of the cured bonding layer, thereby providing convenience for testing the bonding energy between films in the three-dimensional memory, and being beneficial to improving the process technology of the three-dimensional memory and the performance of the three-dimensional memory.
Drawings
FIG. 1 is a schematic diagram of a compression device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the structure of a sample in an embodiment of the present invention;
FIG. 3 is a flow chart of a method of applying pressure in an embodiment of the present invention.
Detailed Description
The following describes in detail embodiments of the pressurizing device and the pressure applying method according to the present invention with reference to the accompanying drawings.
In evaluating the bonding energy between films in a semiconductor device such as a three-dimensional memory, a dual cantilever test method is generally used. However, in the three-dimensional memory, the thickness of the film is usually on the nanometer scale, so that in the process of performing the dual cantilever testing on the sample with the film to be tested, the sample is often bonded with a substrate such as a die wafer by using an adhesive to ensure the testing process is performed smoothly. The adhesive requires a certain temperature and pressure during the curing process, and the thickness of the cured adhesive is closely related to the pressure applied to the sample during curing. The thickness of the cured adhesive directly affects the thickness of the sample, and the half thickness of the sample is an important parameter in the double cantilever test process. At present, in the adhesive curing process, the method for applying pressure to the sample is mainly a heavy object direct pressing method, a four-point screw pressing method, a tablet press pressing method, and the like. Although these pressing methods are simple to operate, they have at least three disadvantages: firstly, the thickness of the adhesive after curing cannot be accurately controlled; secondly, the thickness of the cured adhesive is not uniform due to uneven application of force; again, it is difficult to achieve simultaneous heating and pressurization.
In order to accurately control the thickness and uniformity of the cured adhesive and thus improve the accuracy of the test result of the dual cantilever beam, the present embodiment provides a pressurizing device, fig. 1 is a schematic structural diagram of the pressurizing device according to the present embodiment, and fig. 2 is a schematic structural diagram of a sample according to the present embodiment. As shown in fig. 1 and 2, the present embodiment provides a pressurizing apparatus including:
an indenter 10 for contacting a sample 11, the sample 11 having a surface formed with an adhesive layer 12;
and the air pressure assembly is used for applying air pressure to the pressure head 10 so as to push the pressure head 10 to apply pressure to the surface of the sample 11, which is far away from the adhesive layer 12, and the thickness of the adhesive layer 12 after curing is adjusted.
Specifically, the indenter 10 is located above the sample 11 in the Y-axis direction in fig. 1, and the lower surface of the indenter 10 is configured to contact the sample 11. The pneumatic assembly is disposed above the indenter 10 along the Y-axis direction, and is used for pushing the indenter 10 to move vertically downward (i.e., the Y-axis negative direction in fig. 1) by the gas pressure, so as to apply pressure to the sample 11. The adhesive layer 12 is an uncured adhesive layer before the indenter 10 applies pressure to the sample 11. The specific material of the adhesive layer 12 may be, but is not limited to, epoxy resin. A substrate 13 may be further bonded to the side of the bonding layer 12 facing away from the sample 11, and the bonding layer 12 is used to connect the substrate 13 and the sample 11. The substrate 13 may be, but is not limited to, a die wafer. The gas may be air, nitrogen, or an inert gas (e.g., argon), and may be selected by one skilled in the art according to actual needs. The size of the indenter 10 is preferably greater than or equal to the size of the sample 10, thereby simplifying the sample preparation process and further improving the thickness uniformity of the bonding layer 12 after curing. The material of the pressure head 10 can be teflon material with extremely low friction coefficient and good heat resistance.
In this embodiment, the sample is pressurized by using the gas pressure, so that the uniformity of the surface stress of the indenter 10 and the uniformity of the pressure applied to the sample 11 are ensured, the thickness of the bonding layer 12 after curing can be kept uniform, and a foundation is laid for the accurate test of the sample 11. In addition, due to the controllability of the gas pressure, the thickness of the bonding layer 12 after curing can be precisely controlled, thereby facilitating the testing of the bonding energy between films in the three-dimensional memory, and contributing to the improvement of the process of the three-dimensional memory and the performance of the three-dimensional memory.
Optionally, the pneumatic assembly includes:
and a cylinder, wherein a piston rod 14 of the cylinder is used for being connected with the pressure head 10.
Optionally, the cylinder includes:
and the bearing plate 17 comprises an upper surface and a lower surface opposite to the upper surface, the piston rod 14 is used for being connected with the center of the upper surface, and the pressure head 10 is used for being connected with the lower surface.
Specifically, as shown in fig. 1, the cylinder includes a cylinder 15, a piston rod 14, and the bearing plate 17, wherein the upper surface of the bearing plate 17 is connected to an end of the piston rod 14 away from the cylinder 15, and the lower surface of the bearing plate is connected to the ram 10. The carrier plate 17 can uniformly distribute the pushing force of the piston rod 14, so that the indenter 10 uniformly presses the sample 10. The surface of the indenter 10 for contacting the sample 11 and the surface of the indenter 10 for contacting the carrier plate 17 are both flat surfaces.
Optionally, the pneumatic assembly further includes:
a pipeline 19, one end of the pipeline 19 is connected with a gas source 20 for storing gas, and the other end of the pipeline 19 is connected with the cylinder;
and a control switch 21 installed in the pipe 19 for controlling the magnitude of the gas pressure transmitted to the cylinder.
Optionally, the pneumatic assembly further includes:
a pressure controller 22 installed in the duct 19 for adjusting a flow rate of the gas flowing to the cylinder.
Optionally, the pressure controller 22 is installed between the air source 20 and the control switch 21; alternatively, the first and second electrodes may be,
the pressure controller 22 is installed between the control switch 21 and the cylinder.
Specifically, by providing the control switch 21 in the duct 19, the magnitude of the gas pressure transmitted into the cylinder tube 15 of the cylinder is adjusted by the control switch 21, so as to adjust the thickness of the bonding layer 12 after curing, for example: when the required thickness of the adhesive layer 12 after curing is large, the pressure of the gas transmitted into the cylinder 15 can be reduced by the control switch 21, and the pressure applied to the sample 11 by the indenter 10 is reduced; when the required thickness of the adhesive layer 12 after curing is small, the pressure of the gas transmitted into the cylinder 15 can be increased by the control switch 21, and the pressure applied by the ram 10 to the sample 11 is increased. Through setting up control switch 21, can make pressure device can be applicable to the system appearance requirement of different tie coat thicknesses to accurate control after the solidification the tie coat thickness, expanded pressure device's application, also improved pressure device's use flexibility.
By providing the pressure controller 22 in the conduit 19, it is ensured that the gas is delivered to the cylinder 15 at a steady flow rate, thereby ensuring pressure stability of the ram 10 during continued pressure application.
Optionally, the pressurizing device further comprises:
a base 23 for carrying and heating the sample 11;
a spacer 24 for placing between the base 23 and the sample 11 to prevent the sample 11 from sticking to the base 23.
Specifically, a structure such as a heating wire is embedded in the base 23, and the sample 11 carried on the surface of the base can be heated, so that the adhesive layer 12 is cured under the pressure applied by the indenter 10 and the heating of the base 23. The pressing device provided by the embodiment can simultaneously perform heating and pressing, thereby simplifying the curing operation of the bonding layer 12 and improving the curing efficiency of the bonding layer 12. Meanwhile, since the adhesive layer 12 has a certain fluidity before curing, in order to avoid the adhesive layer 12 flowing out during curing and thus causing the sample 11 and the substrate 13 to stick to the base 23, a spacer 24 is further provided on the surface of the base 23, and the sample 11 with the substrate 13 attached thereto is placed on the surface of the spacer 24. The specific material of the gasket 24 can be selected by those skilled in the art according to actual needs, and only needs to have heat-conducting property and flat surface. For example, the material of the gasket 24 may be teflon material with very low friction coefficient and good heat resistance.
In order to ensure the accuracy of the moving path of the ram 10, a plurality of supporting columns 18 can be further arranged on the surface of the base 23, one end of each supporting column 18 is connected with the base 23, the other end of each supporting column 18 is connected with a supporting plate 16, the supporting columns 18 penetrate through the bearing plate 17, a plurality of supporting columns 18 are distributed around the periphery of the piston rod 14, and the bearing plate can perform lifting movement along the supporting columns 18; the cylinder 15 is located on a side of the support plate 16 facing away from the base 23, and the piston rod 14 passes through the support plate 16. Through the arrangement of the support plate 16 and the plurality of support columns 18, the positions of the air cylinder and the pressure head 10 connected with the air cylinder can be limited, and the pressure head 10 is ensured to perform lifting motion along a preset path. The sizes of the supporting plate 16 and the bearing plate 17 are both larger than that of the indenter 10, and the supporting column 18 is not in contact with the indenter 10. The lifting movement in this embodiment means a movement in a direction perpendicular to the base 23. The "plurality of" in the present embodiment means two or more.
Optionally, the pressurizing device further comprises:
and the heat-conducting shell 25 is positioned on the surface of the base 23, and the pressure head 10, the air pressure component and the sample 11 are all positioned in a cavity surrounded by the heat-conducting shell 25.
Specifically, in order to ensure that the sample 10 is kept within a preset temperature range during the curing process, the indenter 10, the air pressure assembly and the sample 11 are all located in a closed cavity surrounded by the heat-conducting shell 25, so as to prevent the influence of the external environment on the curing process. The specific material of the heat conducting casing 25 can be selected by those skilled in the art according to actual needs, and can be, for example, an aluminum alloy material with good heat conducting property and lightness.
Furthermore, the present embodiment also provides a pressure application method. Fig. 3 is a flow chart of a pressure applying method according to an embodiment of the present invention, which can be implemented by using the pressurizing apparatus shown in fig. 1. As shown in fig. 1 and 3, the pressure applying method provided by the present embodiment includes the following steps:
step S31, providing a sample 11, wherein the surface of the sample 11 is formed with an adhesive layer 12;
in step S32, the pressure of the gas from the outside pushes a pressing head 10 to apply pressure to the surface of the sample 11 away from the bonding layer 12, so as to adjust the cured thickness of the bonding layer 12.
Optionally, the specific step of applying pressure to the surface of the sample 11 away from the adhesive layer 12 by pushing a pressure head 10 by the gas pressure from the outside includes:
providing a cylinder, wherein a piston rod 14 of the cylinder is connected with the surface of the pressure head 10, which faces away from the sample 11;
gas is delivered to the cylinder and the ram 14 pushes the ram 14 to apply pressure to the surface of the sample facing away from the adhesive layer 12.
Optionally, the specific step of delivering gas to the cylinder comprises:
the pressure of the gas delivered to the cylinder is adjusted according to the desired thickness of the bonding layer 12 after curing.
Optionally, the specific step of delivering gas to the cylinder comprises:
adjusting the flow rate of the gas such that the gas is delivered to the cylinder at a steady flow rate.
Optionally, the specific step of applying pressure to the surface of the sample away from the adhesive layer 12 by pushing a pressure head 10 by the gas pressure from the outside further comprises:
the sample 11 is heated while gas pressure from the outside pushes an indenter 10 to apply pressure to the surface of the sample facing away from the adhesive layer 12.
Optionally, the specific step of heating the sample comprises:
placing the sample on the surface of a base 23 of a closed chamber;
the sample is heated by the base 23.
Optionally, the pressure applying method further includes the following steps:
a pad 24 is placed on the surface of the base 23, and the sample 11 is placed on the surface of the pad 24 to prevent the sample 11 from sticking to the base 23.
In the pressurizing device and the pressure applying method provided by the present embodiment, a pressure head for contacting a sample is provided, and a gas is used as a pressure source to push the pressure head to apply pressure to the sample, so that on one hand, the gas pressure applied to the surface of the pressure head can be ensured to be uniform by the gas pressurizing method, thereby ensuring the uniformity of the pressure applied to the surface of the sample, and further improving the uniformity of the thickness of a cured bonding layer; on the other hand, the gas pressurization mode has high pressure controllability, and is convenient for accurately controlling the thickness of the cured bonding layer, thereby providing convenience for testing the bonding energy between films in the three-dimensional memory, and being beneficial to improving the process technology of the three-dimensional memory and the performance of the three-dimensional memory.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (15)
1. A compression device, comprising:
the pressure head is used for contacting with a sample, and a bonding layer is formed on the surface of the sample;
and the air pressure assembly is used for applying air pressure to the pressure head so as to push the pressure head to apply pressure to the surface of the sample departing from the bonding layer, and the thickness of the bonding layer after curing is adjusted.
2. The pressurization device of claim 1, wherein said air pressure assembly comprises:
and a piston rod of the air cylinder is used for being connected with the pressure head.
3. The pressurization device according to claim 2, characterized in that said cylinder comprises:
the bearing plate comprises an upper surface and a lower surface opposite to the upper surface, the piston rod is used for being connected with the center of the upper surface, and the pressure head is used for being connected with the lower surface.
4. The pressurization device of claim 2, wherein said air pressure assembly further comprises:
one end of the pipeline is connected with a gas source for storing gas, and the other end of the pipeline is connected with the cylinder;
and the control switch is arranged in the pipeline and used for controlling the pressure of the gas transmitted to the cylinder.
5. The pressurization device of claim 4, wherein said air pressure assembly further comprises:
a pressure controller installed in the duct for adjusting a flow rate of the gas flowing to the cylinder.
6. The pressurization device according to claim 5, wherein said pressure controller is mounted between said gas source and said control switch; alternatively, the first and second electrodes may be,
the pressure controller is installed between the control switch and the cylinder.
7. The compression device of claim 1, further comprising:
a base for carrying and heating the sample to cure the bonding layer;
a gasket for placement between the base and the sample to prevent the sample from sticking to the base.
8. The compression device of claim 7, further comprising:
the heat conduction shell is located the base surface, the pressure head the atmospheric pressure subassembly with the sample all is located the heat conduction shell surrounds the cavity that forms.
9. A pressure application method, characterized by comprising the steps of:
providing a sample, wherein a bonding layer is formed on the surface of the sample;
and pushing a pressure head to apply pressure to the surface of the sample, which is far away from the bonding layer, by using the gas pressure from the outside, so that the thickness of the bonding layer after curing is adjusted.
10. A method as claimed in claim 9, wherein the step of applying pressure to the surface of the sample facing away from the adhesive layer by a pressure head driven by gas pressure from the outside comprises:
providing a cylinder, wherein a piston rod of the cylinder is connected with the surface of the pressure head, which is far away from the sample;
and conveying gas to the air cylinder, wherein the piston rod pushes the pressure head to apply pressure to the surface of the sample, which is far away from the bonding layer.
11. The pressure application method of claim 10, wherein the specific step of delivering gas to the cylinder comprises:
and adjusting the pressure of the gas transmitted to the cylinder according to the required thickness of the bonding layer after curing.
12. The pressure application method of claim 10, wherein the specific step of delivering gas to the cylinder comprises:
adjusting the flow rate of the gas such that the gas is delivered to the cylinder at a steady flow rate.
13. The method of claim 9, wherein the step of applying pressure to the surface of the sample facing away from the adhesive layer by a pressure head pushed by gas from the outside further comprises:
and heating the sample, and simultaneously pushing an indenter to apply pressure to the surface of the sample, which is far away from the bonding layer, by using the gas pressure from the outside so as to cure the bonding layer.
14. The pressure application method of claim 13, wherein the specific step of heating the sample comprises:
placing the sample on the surface of a base of a closed chamber;
heating the sample through the base.
15. The pressure applying method according to claim 14, further comprising the step of:
placing a pad on the surface of the base, and placing the sample on the surface of the pad to prevent the sample from adhering to the base.
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| CN202010026305.5A CN111211071A (en) | 2020-01-10 | 2020-01-10 | Pressurizing device and pressure applying method |
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| CN202010026305.5A CN111211071A (en) | 2020-01-10 | 2020-01-10 | Pressurizing device and pressure applying method |
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| CN1964011A (en) * | 2005-11-11 | 2007-05-16 | 株式会社半导体能源研究所 | Apparatus and method for pressure bonding and method for manufacturing semiconductor device |
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| US20170015091A1 (en) * | 2015-07-14 | 2017-01-19 | uBeam Inc. | Laminate material bonding |
| KR20190056188A (en) * | 2017-11-16 | 2019-05-24 | 주식회사 야스 | Chucking System Of Adhesive Chuck and Substrate By Gas Pressure Difference |
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