CN111211038A - Method and device for roughening wafer and storage medium - Google Patents

Method and device for roughening wafer and storage medium Download PDF

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Publication number
CN111211038A
CN111211038A CN201811398609.3A CN201811398609A CN111211038A CN 111211038 A CN111211038 A CN 111211038A CN 201811398609 A CN201811398609 A CN 201811398609A CN 111211038 A CN111211038 A CN 111211038A
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wafer
roughening
gas
ion beam
processed
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黄德权
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SAE Technologies Development Dongguan Co Ltd
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SAE Technologies Development Dongguan Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention discloses a rough treatment method of a wafer, which relates to the field of semiconductor technology and comprises the following steps: placing a wafer to be processed in a processing chamber; wherein the processing chamber is a vacuum environment; introducing a mixed gas into the process chamber; wherein the mixed gas comprises an inert gas and a hydrocarbon gas; ionizing the mixture gas, and accelerating the mixture gas through an electric field to obtain an ion beam; and controlling the ion beam to etch the back surface of the wafer to be processed to obtain a processed wafer with a roughened back surface. The embodiment of the invention also provides a rough treatment device and a storage medium for the wafer, which can effectively improve the roughness of the back surface of the treated wafer, thereby improving the stability of the evaporated metal.

Description

Method and device for roughening wafer and storage medium
Technical Field
The present invention relates to the field of semiconductor processes, and in particular, to a method and an apparatus for roughening a wafer, and a storage medium.
Background
In microelectronics, certain operations require that the surfaces to be bonded be as smooth as possible, but certain components require that surfaces be made to face each other but not to adhere to each other, so as to prevent improper bonding of the semiconductor on the corresponding object surface and to maintain its slipperiness.
In the prior art, the chemical etchant used for the wafer back surface roughening treatment usually adopts an aqueous solution of nitric acid (HNO3) and hydrofluoric acid (HF), and the solution is prepared as the chemical etchant according to a certain proportion to provide a good back surface metal adhesion with good delustering and roughened surface.
In the process of implementing the invention, the inventor finds that the chemical etchant in the prior art has unsatisfactory effect, and experiments find that the roughness of the back surface of the wafer obtained by the chemical etchant cannot reach an effective range, thereby causing certain influence on the subsequent metal process of the back surface of the wafer. After the back surface of the wafer is subjected to chemical etching treatment, the roughness of the back surface of the wafer is often insufficient, and when metal is evaporated again, the back surface metal is easy to peel off due to insufficient adhesion force.
Disclosure of Invention
The embodiment of the invention aims to provide a wafer roughening processing method, a wafer roughening processing device and a storage medium, which can effectively improve the roughness of the back of a processed wafer, so that the stability of evaporated metal is improved.
In order to achieve the above object, an embodiment of the present invention provides a method for roughening a wafer, including:
placing a wafer to be processed in a processing chamber; wherein the processing chamber is a vacuum environment;
introducing a mixed gas into the process chamber; wherein the mixed gas comprises an inert gas and a hydrocarbon gas;
ionizing the mixture gas, and accelerating the mixture gas through an electric field to obtain an ion beam;
and controlling the ion beam to etch the back surface of the wafer to be processed to obtain a processed wafer with a roughened back surface.
As a modification of the above, the vacuum degree of the vacuum environment is 1.0 to 2.5 Pa.
As a modification of the above scheme, the inert gas in the mixed gas includes one or more of argon, neon, krypton and xenon.
As a refinement of the above, the hydrocarbon gas comprises one or more of methane, ethylene, acetylene, and benzene.
As a modification of the above scheme, the mixed gas is a mixed gas of argon and ethylene, wherein the content of ethylene is 20%.
The improvement of the scheme is characterized in that the flow speed of the ion beam is 10 sccm; the energy of the ion beam is 300 eV; the ion beam intensity was 250 mA.
As an improvement of the above aspect, in the etching, an incident angle of the ion beam is 45 to 60 degrees, and the etching time is 100 to 120 seconds.
The embodiment of the invention also provides a rough processing device of the wafer, which comprises:
the vacuum control module is used for placing the wafer to be processed in the processing chamber; wherein the processing chamber is a vacuum environment;
a gas introduction module for introducing a mixed gas into the processing chamber; wherein the mixed gas comprises an inert gas and a hydrocarbon gas;
the ionization module is used for ionizing the mixture gas and accelerating the mixture gas through an electric field to obtain an ion beam;
and the etching module is used for controlling the ion beam to etch the back surface of the wafer to be processed to obtain the processed wafer with the roughened back surface.
The embodiment of the invention also provides a wafer roughening processing device, which comprises a processor, a memory and a computer program stored in the memory and configured to be executed by the processor, wherein the processor implements the roughening processing method according to any one of the above items when executing the computer program.
An embodiment of the present invention further provides a computer-readable storage medium, where the computer-readable storage medium includes a stored computer program, where when the computer program runs, the apparatus where the computer-readable storage medium is located is controlled to execute the rough processing method described in any one of the above.
Compared with the prior art, the wafer roughening processing method, the wafer roughening processing device and the storage medium provided by the invention have the advantages that the mixed gas comprising the inert gas and the hydrocarbon gas is ionized in the vacuum environment to obtain the ion beam, and the ion beam is adopted in the vacuum environment to etch the back surface of the wafer to be processed, so that the processed wafer with the roughened back surface is obtained. The ion beam is adopted to etch the back of the wafer to be processed, so that the technical problem that chemical etching is difficult to control in the prior art is solved, the roughness of the back of the wafer to be processed is finely controlled, the roughness of the back of the processed wafer can be effectively improved, and the stability of evaporated metal is improved.
Drawings
Fig. 1 is a flowchart illustrating a method for roughening a wafer according to embodiment 1 of the present invention.
Fig. 2 is a flowchart illustrating a method for roughening a wafer according to embodiment 2 of the present invention.
Fig. 3 is a schematic structural diagram of an apparatus for roughening a wafer according to embodiment 3 of the present invention.
Fig. 4 is a schematic structural diagram of an apparatus for roughening a wafer according to embodiment 4 of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Embodiment 1 of the present invention provides a method for roughening a wafer. Referring to fig. 1, a flow chart of a wafer roughening method according to embodiment 1 is shown, where the wafer roughening method includes steps S110 to S140.
S110, placing a wafer to be processed in a processing chamber; wherein the processing chamber is a vacuum environment.
The wafer to be processed may be a pre-cleaned wafer. For example, the wafer to be processed may be obtained by cleaning the surface contamination by precleaning after the wafer is subjected to ion etching by introducing inert gas argon to remove the surface residue of the wafer.
In actual operation, the wafer to be processed may be moved into the processing chamber, or the environment where the wafer to be processed is located may be evacuated to a vacuum environment, which does not affect the beneficial effects obtainable by the present invention.
Preferably, the vacuum degree of the vacuum environment is 1.0 to 2.5Pa, so as to avoid interference of impurities in the environment during the rough treatment of the wafer to be treated, thereby ensuring effective rough treatment of the wafer to be treated.
S120, introducing mixed gas into the processing chamber; wherein the mixed gas comprises an inert gas and a hydrocarbon gas.
Preferably, in the mixed gas, the inert gas comprises one or more of argon, neon, krypton and xenon; the hydrocarbon gas includes one or more of methane, ethylene, acetylene, and benzene. It is understood that the inert gas and the hydrocarbon gas are not limited to those mentioned above, and may be other inert gases or hydrocarbon gases for the subsequent ionization and etching steps, without affecting the beneficial effects of the present invention.
More preferably, the mixed gas may be a mixed gas of argon and ethylene, in which the content of ethylene is 20%. In actual processing, the composition and the proportion of the mixed gas are not limited to the above examples, and may be adjusted according to the actual needs required by etching, for example, the composition is adjusted or the proportion is adjusted, and the like, without affecting the beneficial effects obtainable by the present invention.
And S130, ionizing the mixture gas, and accelerating the mixture gas through an electric field to obtain an ion beam.
Preferably, the ionization may be controlled so that the flow rate of the ion beam is 10sccm (standard cubic centimeter); the energy of the ion beam is 300eV (Electron-Volt); the ion beam intensity was 250 mA.
It is understood that the parameters of the ion beam, such as the flow velocity, the energy, and the flow intensity, are only limited by way of example, and in practical cases, the parameters of the ion beam may be adjusted according to actual needs without affecting the beneficial effects obtainable by the present invention.
S140, controlling the ion beam to etch the back surface of the wafer to be processed to obtain a processed wafer with a roughened back surface.
And exposing the back surface of the wafer to be processed in the ion beam, and controlling the ion beam to etch the back surface of the wafer to be processed.
Preferably, in the etching, an incident angle of the ion beam is 45 to 60 degrees, and the etching time is 100 to 120 seconds. It is understood that the incident angle and the etching time are not limited to the above examples, and can be adjusted according to practical situations without affecting the beneficial effects of the present invention.
In the method for roughening a wafer according to embodiment 1 of the present invention, a mixed gas including an inert gas and a hydrocarbon gas is ionized in a vacuum environment to obtain an ion beam, and the ion beam is used to etch the back surface of the wafer to be processed in the vacuum environment, so as to obtain a processed wafer with a roughened back surface. The ion beam is adopted to etch the back of the wafer to be processed, so that the technical problem that chemical etching is difficult to control in the prior art is solved, the roughness of the back of the wafer to be processed is finely controlled, the roughness of the back of the processed wafer can be effectively improved, and the stability of evaporated metal is improved.
The embodiment 2 of the invention also provides another rough treatment method for the wafer. Referring to fig. 2, a schematic flow chart of the rough processing method provided in embodiment 2 is shown, and the rough processing method includes steps S210 to S240.
S210, conveying the wafer to be processed into a vacuum environment with the vacuum degree of 1.0-2.5 Pa.
S220, introducing mixed gas of argon and ethylene into the vacuum environment; the content of ethylene in the mixed gas was 20%.
And S230, ionizing the mixed gas, and accelerating the mixed gas by an electric field to obtain an ion beam with the flow speed of 10sccm, the energy of 300eV and the flow intensity of 250 mA.
S240, exposing the wafer to be processed in the ion beam, controlling the ion beam to perform etching on the wafer to be processed for 100-120 seconds at an incident angle of 45-60 degrees, and obtaining the processed wafer with the roughened back surface.
In the wafer roughening method provided in embodiment 2 of the present invention, on the basis of obtaining the beneficial effects described in the embodiment, the effect of roughening the wafer is further improved by further optimizing the composition and the ratio of the mixed gas, further optimizing the parameters of the ion beam, and further optimizing the etching process. After the wafer is subjected to rough treatment, the rough surface of the wafer, namely the height difference between the high point and the low point of the back surface of the wafer is 10A to 15A, for example, the height difference between the high point and the low point of the back surface of the wafer is 0.5 μm to 1.5 μm, when the semiconductor process flows such as metal evaporation and the like are carried out subsequently, metal can be attached to the back surface of the wafer more stably, and therefore the stability of the metal evaporation and the like is improved.
Embodiment 3 of the present invention provides a wafer roughening apparatus. Referring to fig. 3, the roughening processing apparatus 30 includes a vacuum module 31, a gas introduction module 32, an ionization module 33, and an etching module 34.
The vacuum control module 31 is used for placing a wafer to be processed in the processing chamber; wherein the processing chamber is a vacuum environment. The gas introducing module 32 is used for introducing mixed gas into the processing chamber; wherein the mixed gas comprises an inert gas and a hydrocarbon gas. The ionization module 33 is configured to ionize the mixture gas, and accelerate the mixture gas by an electric field to obtain an ion beam. The etching module 34 is configured to control the ion beam to etch the back surface of the wafer to be processed, so as to obtain a processed wafer with a roughened back surface.
The operation of the roughening apparatus 30 is the roughening method for wafer according to any of the above embodiments, which is not described herein again.
In the rough processing apparatus for a wafer according to embodiment 3 of the present invention, a mixed gas including an inert gas and a hydrocarbon gas is ionized in a vacuum environment to obtain an ion beam, and the ion beam is used in the vacuum environment to etch the back surface of the wafer to be processed, so as to obtain a processed wafer with a roughened back surface. The ion beam is adopted to etch the back of the wafer to be processed, so that the technical problem that chemical etching is difficult to control in the prior art is solved, the roughness of the back of the wafer to be processed is finely controlled, the roughness of the back of the processed wafer can be effectively improved, and the stability of evaporated metal is improved.
Embodiment 4 of the present invention also provides another roughening processing apparatus 40. Referring to fig. 4, a roughening apparatus 40 according to embodiment 4 of the present invention includes: a processor 41, a memory 42 and a computer program, such as a roughening program, stored in said memory and executable on said processor. The processor 41, when executing the computer program, implements the steps in the above-described embodiments of the testing method, such as step S120 shown in fig. 1. Alternatively, the processor implements the functions of the modules in the embodiments of the apparatuses described above when executing the computer program, for example, the rough processing apparatus described in the embodiments described above.
Illustratively, the computer program may be divided into one or more modules, which are stored in the memory 42 and executed by the processor 41 to accomplish the present invention. The one or more modules may be a series of computer program instruction segments capable of performing specific functions, which are used to describe the execution of the computer program in the rough processing apparatus 40. For example, the computer program may be divided into a vacuum control module, a gas introduction module, an ionization module, and an etching module, each of which functions specifically as follows: the vacuum control module is used for placing a wafer to be processed in the processing chamber; wherein the processing chamber is a vacuum environment; the gas introduction module is used for introducing mixed gas into the processing chamber; wherein the mixed gas comprises an inert gas and a hydrocarbon gas; the ionization module is used for ionizing the mixture gas and accelerating the mixture gas through an electric field to obtain an ion beam; and the etching module is used for controlling the ion beam to etch the back surface of the wafer to be processed to obtain the processed wafer with the roughened back surface.
The rough processing device 40 may be a computing device such as a desktop computer, a notebook computer, a palm computer, and a cloud server. The rough processing device 40 may include, but is not limited to, a processor 41 and a memory 42. It will be understood by those skilled in the art that the schematic diagram is merely an example of an image enhancement device, and does not constitute a limitation on rough processing apparatus 40, and may include more or less components than those shown, or combine some components, or different components, for example, rough processing apparatus 40 may further include an input-output device, a network access device, a bus, etc.
The Processor 41 may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic, discrete hardware components, etc. The general purpose processor may be a microprocessor or the processor may be any conventional processor or the like, and the processor 41 is the control center of the roughening apparatus 40, and various interfaces and lines are used to connect the various parts of the entire roughening apparatus 40.
The memory 42 may be used for storing the computer programs and/or modules, and the processor 41 may implement various functions of the rough processing apparatus 40 by executing or executing the computer programs and/or modules stored in the memory 42 and calling data stored in the memory 42. The memory 42 may mainly include a program storage area and a data storage area, wherein the program storage area may store an operating system, an application program required by at least one function (such as a sound playing function, an image playing function, etc.), and the like; the storage data area may store data (such as audio data, a phonebook, etc.) created according to the use of the cellular phone, and the like. In addition, the memory 42 may include high speed random access memory, and may also include non-volatile memory, such as a hard disk, a memory, a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), at least one magnetic disk storage device, a Flash memory device, or other volatile solid state storage device.
Wherein, the integrated module of the rough processing device 40 can be stored in a computer readable storage medium if it is implemented in the form of software functional unit and sold or used as a stand-alone product. Based on such understanding, all or part of the flow of the method according to the embodiments of the present invention may also be implemented by a computer program, which may be stored in a computer-readable storage medium, and when the computer program is executed by a processor, the steps of the method embodiments may be implemented. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer-readable medium may include: any entity or device capable of carrying the computer program code, recording medium, usb disk, removable hard disk, magnetic disk, optical disk, computer Memory, Read-Only Memory (ROM), Random Access Memory (RAM), electrical carrier wave signals, telecommunications signals, software distribution medium, and the like.
In embodiment 4 of the present invention, a mixed gas including an inert gas and a hydrocarbon gas is ionized in a vacuum environment to obtain an ion beam, and the ion beam is used to etch the back surface of a wafer to be processed in the vacuum environment, so as to obtain a processed wafer with a roughened back surface. The ion beam is adopted to etch the back of the wafer to be processed, so that the technical problem that chemical etching is difficult to control in the prior art is solved, the roughness of the back of the wafer to be processed is finely controlled, the roughness of the back of the processed wafer can be effectively improved, and the stability of evaporated metal is improved.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.

Claims (10)

1. A method for roughening a wafer, comprising:
placing a wafer to be processed in a processing chamber; wherein the processing chamber is a vacuum environment;
introducing a mixed gas into the process chamber; wherein the mixed gas comprises an inert gas and a hydrocarbon gas;
ionizing the mixture gas, and accelerating the mixture gas through an electric field to obtain an ion beam;
and controlling the ion beam to etch the back surface of the wafer to be processed to obtain a processed wafer with a roughened back surface.
2. The method for roughening a wafer according to claim 1, wherein a degree of vacuum of said vacuum environment is 1.0 to 2.5 Pa.
3. The method for roughening a wafer as claimed in claim 1, wherein said inert gas in said mixture of gases includes one or more of argon, neon, krypton and xenon.
4. A method for roughening a wafer as recited in claim 1, wherein said hydrocarbon gas includes one or more of methane, ethylene, acetylene and benzene.
5. The method for roughening a wafer according to claim 1, wherein said mixed gas is a mixed gas of argon and ethylene, and the ethylene content is 20%.
6. The method for roughening a wafer according to any one of claims 1 to 5, wherein a flow rate of said ion beam is 10 sccm; the energy of the ion beam is 300 eV; the ion beam intensity was 250 mA.
7. The method for roughening a wafer according to any one of claims 1 to 5, wherein an incident angle of said ion beam is 45 to 60 degrees and said etching time is 100 to 120 seconds in said etching.
8. An apparatus for roughening a wafer, comprising:
the vacuum control module is used for placing the wafer to be processed in the processing chamber; wherein the processing chamber is a vacuum environment;
a gas introduction module for introducing a mixed gas into the processing chamber; wherein the mixed gas comprises an inert gas and a hydrocarbon gas;
the ionization module is used for ionizing the mixture gas and accelerating the mixture gas through an electric field to obtain an ion beam;
and the etching module is used for controlling the ion beam to etch the back surface of the wafer to be processed to obtain the processed wafer with the roughened back surface.
9. An apparatus for roughening a wafer comprising a processor, a memory and a computer program stored in the memory and configured to be executed by the processor, the processor implementing a roughening method as claimed in any one of claims 1 to 7 when executing the computer program.
10. A computer-readable storage medium, comprising a stored computer program, wherein the computer program, when executed, controls an apparatus in which the computer-readable storage medium is located to perform the asperity processing method as recited in any one of claims 1 to 7.
CN201811398609.3A 2018-11-22 2018-11-22 Method and device for roughening wafer and storage medium Pending CN111211038A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114284142A (en) * 2020-09-27 2022-04-05 东莞新科技术研究开发有限公司 Semiconductor surface processing method

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Publication number Priority date Publication date Assignee Title
US20030077847A1 (en) * 2001-10-22 2003-04-24 Yoo Myung Cheol Method of making diode having reflective layer
CN101046968A (en) * 2006-03-29 2007-10-03 新科实业有限公司 Magnetic head with micro-veins and manufacturing method thereof
CN102005516A (en) * 2009-08-28 2011-04-06 上海蓝宝光电材料有限公司 Led chip and manufacturing method thereof
CN102044608A (en) * 2010-11-17 2011-05-04 重庆大学 Flip-chip LED chip structure and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030077847A1 (en) * 2001-10-22 2003-04-24 Yoo Myung Cheol Method of making diode having reflective layer
CN101046968A (en) * 2006-03-29 2007-10-03 新科实业有限公司 Magnetic head with micro-veins and manufacturing method thereof
CN102005516A (en) * 2009-08-28 2011-04-06 上海蓝宝光电材料有限公司 Led chip and manufacturing method thereof
CN102044608A (en) * 2010-11-17 2011-05-04 重庆大学 Flip-chip LED chip structure and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114284142A (en) * 2020-09-27 2022-04-05 东莞新科技术研究开发有限公司 Semiconductor surface processing method

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