CN111200034A - Crystalline silicon photovoltaic module suitable for complex change electromagnetic environment - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses a crystalline silicon photovoltaic module suitable for a complex change electromagnetic environment, which comprises a nano electromagnetic shielding antireflection film layer, a front packaging material layer, an upper packaging adhesive film layer, a crystalline silicon battery layer, a lower packaging adhesive film layer and a rear packaging material layer which are sequentially arranged from top to bottom, wherein the antireflection film layer is made of a nano composite material which is SiO2And coating the transparent conductive metal oxide. In the invention, SiO is used as the raw material2The coating layer which is formed by coating the conductive metal oxide composite nano material and has good conductivity can effectively absorb and guide the energy of an electromagnetic field, thereby playing the role of electromagnetic shielding and greatly improving the output power of the photovoltaic module.
Description
Technical Field
The invention relates to a solar photovoltaic module, in particular to a crystalline silicon photovoltaic module suitable for a complex change electromagnetic environment.
Background
In general, in a solar photovoltaic module project, high-voltage alternating-current power transmission is required during use because electric energy converted from solar energy needs to be output. In the construction of a project, the power transmission cable may pass through the vicinity of the photovoltaic module due to the surrounding environment of the project. In the operation process of a photovoltaic project, the solar photovoltaic module generates electricity while the power transmission cable outputs alternating current, and the alternating current changes to generate a complex electromagnetic field environment near the cable.
The crystalline silicon solar cell is composed of PN nodes, and a built-in electric field is formed near the PN nodes due to the characteristics of materials. In the absence of an external electromagnetic field, electrons (positively charged, minority carriers) generated by the P-type material and holes (positively charged, minority carriers) generated by the N-type material both move towards the junction of the PN and the P-type material, and are immediately exchanged into the other material by the built-in electric field after entering the built-in electric field, thereby generating a photo-generated current (as shown in fig. 1). When a photovoltaic cell is placed in a complex (changing) electromagnetic field, the moving distance of minority carriers generated by light irradiation is increased, the time for reaching the built-in electric field of a PN junction is increased (from a straight line to a curve), and even exceeds the recombination time of the minority carriers, so that the reduction of the photo-generated current is caused, the output power of the photovoltaic module is reduced, and the conversion efficiency is reduced (as shown in FIG. 2, X represents the magnetic field caused by the current change of a power transmission line).
Research shows that in a complex variable electromagnetic environment with overlarge intensity, the output power of the conventional crystalline silicon photovoltaic module can be attenuated by more than 1/3 or even 1/2. The complicated change electromagnetic environment has great influence on the output power of the conventional crystalline silicon photovoltaic module. Because conventional crystalline silicon photovoltaic modules lack a resistance to a complex electromagnetic environment, photovoltaic power station project design parties or construction personnel are required to perform isolation operation or capacity reduction use during photovoltaic module arrangement and alternating power transmission line installation, and waste of solar energy and reduction of investment income are caused.
(I) disadvantages of conventional electromagnetic shielding schemes
Electromagnetic shielding is the use of shielding materials to block or attenuate the propagation of electromagnetic energy from the shielded area to the outside.
1. Ferromagnetic materials and metallic good conductor materials. These two types are commonly used shielding materials. Because the ferromagnetic material has small conductivity and is not suitable for shielding high-frequency electromagnetic fields, the good metal conductor has higher conductivity and is suitable for shielding high-frequency and low-frequency electromagnetic fields and electrostatic fields. The most commonly used are materials with good electrical conductivity, such as steel sheets, galvanized steel sheets, copper sheets, aluminum sheets, and the like. The metal shielding material also has excellent mechanical properties, but has the obvious defects of high density, easy corrosion, difficult processing and the like and has larger limitation.
2. The surface is coated with a thin film shielding material. The material is a shielding material mainly taking reflection loss as a main component, and a conducting layer is attached to the surface of an insulator such as plastic and the like so as to achieve the purpose of shielding. Common preparation methods include electroless gold plating, vacuum plating, sputtering, metal spraying, metal foil pasting, and the like. The surface layer conductive film shielding material generally has the advantages of good conductivity, obvious shielding effect and the like, and has the defects of low adhesion of the surface layer conductive film, easy stripping and poor secondary processing performance.
3. Filling composite shielding material. The material is formed by filling and compounding conductive filler and molding materials such as plastics. The conductive filler is generally selected from fibrous, net-shaped, dendritic or flaky materials with excellent conductivity, and commonly used materials comprise metal fibers, carbon fibers, metal-plated fibers, superfine carbon black, mica sheets, metal alloy powder and the like; the molding material is usually a synthetic resin material such as polyphenylene ether, polycarbonate, ABS, nylon, thermoplastic polyester, and the like.
4. Conductive coating shielding materials. The conductive coating is a functional coating. The conductive coating materials can be classified into intrinsic conductive coating materials and admixture conductive coating materials according to their compositions and conductive mechanisms. The intrinsic conductive coating is made of intrinsic conductive polymers as film forming substances, mainly comprising polyacetylene, polyphenylene sulfide, polypyrrole, polythiophene, polyaniline and the like, but the conductive polymers are difficult to dissolve and difficult to process, are only limited to laboratory research and have a certain distance from practical application. The current conductive paint is mainly a blending conductive paint, which generally takes various synthetic resins as film forming agents and takes metal micro powder or non-metal particles with good conductive performance as conductive fillers, and the materials are mixed and dispersed to prepare a coating capable of being constructed, and the coating is sprayed or brushed on the surface of plastic to be solidified into a film under certain conditions.
The common electromagnetic shielding schemes cannot meet the requirements of conventional crystalline silicon solar photovoltaic modules because the used materials are opaque and the solar energy (light) cannot well penetrate through the shielding materials to reach the surface of the solar cell.
(II) a transparent metal oxide conductive material.
The material has good conductivity and controllable light transmittance, and can well adjust the shielding strength and the light transmittance by controlling the thickness of a shielding film layer formed by the transparent metal oxide conductive material, so that the material can better adapt to the requirements of crystalline silicon photovoltaic modules.
However, the metal oxide material has insufficient weather resistance (ability to withstand weather, such as illumination, wind and rain, cold and heat, etc.), and cannot be directly used outside the crystalline silicon photovoltaic module but inside the photovoltaic module.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a crystalline silicon photovoltaic module which has a shielding and conducting function and improves output power and is suitable for complex-change electromagnetic environments.
In order to solve the technical problems, the invention adopts the following technical scheme:
a crystalline silicon photovoltaic module suitable for a complex change electromagnetic environment comprises an anti-reflection film layer, a front packaging material layer, an upper packaging adhesive film layer, a crystalline silicon battery layer, a lower packaging adhesive film layer and a rear packaging material layer which are sequentially arranged from top to bottom, wherein the anti-reflection film layer is made of a nano composite material,the nano composite material is SiO2And coating the transparent conductive metal oxide.
As a further improvement of the above technical means, preferably, the SiO is2Transparent conductive metal oxide coated SiO2The shell layer is of a spherical shell structure.
As a further improvement of the above technical means, preferably, the SiO is2The diameter of the shell layer is smaller than the thickness of the antireflection film layer.
As a further improvement of the above technical means, preferably, the SiO is2The diameter of the shell layer is D, and the following requirements are met: d is more than or equal to 40nm and less than or equal to 60 nm.
As a further improvement of the above technical means, preferably, the SiO is2The thickness of the shell layer is B, and the following requirements are met: b is more than or equal to 1nm and less than or equal to 3 nm.
As a further improvement of the above technical solution, preferably, the thickness of the antireflection film layer is 80nm to 200 nm.
The innovation and the advantages of the invention are as follows:
electromagnetic shielding is the use of shielding materials to block or attenuate the propagation of electromagnetic energy from the shielded area to the outside. The electromagnetic shielding principle is to utilize the reflection, absorption and guiding functions of the shielding body on electromagnetic energy flow, and the electromagnetic shielding functions are closely related to electric charges, electric currents and polarization phenomena induced on the surface of the shielding structure and inside the shielding body. The shielding is classified into electric field shielding (electrostatic shielding and alternating electric field shielding), magnetic field shielding (low-frequency magnetic field and high-frequency magnetic field shielding), and electromagnetic field shielding (electromagnetic wave shielding) according to its principle. Electromagnetic shielding is generally referred to as the latter, i.e. shielding both the electric and magnetic fields.
The prior art does not provide a shielding function when a large defect of a photovoltaic module is not provided, in the prior art, an antireflection film layer is used for increasing the transmittance of light, and the material is generally pure SiO2。
The invention redesigns the surface film layer microstructure of the anti-reflection film layer on the surface of the front packaging material of the conventional crystalline silicon photovoltaic module, and the surface film layer microstructure is made of SiO2The transparent conductive metal oxide is coated on the composite nano material, so that electrons still have electron tunnel effect on the nano scaleCan be coated with SiO2Move in the coated conductive metal oxide material, and thus, SiO2The composite nanometer material coated with the conductive metal oxide still has the conductive capability, and on the basis, the composite nanometer material is made of SiO2The anti-reflection film layer formed by coating the conductive metal oxide composite nano material has conductive performance, and can effectively absorb and guide the energy of an electromagnetic field, thereby playing a role in electromagnetic shielding; at the same time, SiO2And the transparent conductive metal oxide coated by the transparent conductive metal oxide have light transmission on a nanometer scale, so that the transparent conductive metal oxide has SiO2The antireflection film layer made of the coated conductive metal oxide material has good light transmission and electromagnetic shielding performance; and because of SiO2Has good environmental weatherability, therefore, SiO2The antireflection film layer made of the coated transparent conductive metal oxide material has a long service life and can take effect for a long time in the service life of the photovoltaic module.
Drawings
Fig. 1 is a working principle diagram of a solar cell in a photovoltaic module (without an external magnetic field).
Fig. 2 is a working principle diagram of a solar cell in a photovoltaic module (the outside has a complex magnetic field).
Fig. 3 is a schematic structural view of a photovoltaic module of the present invention.
FIG. 4 is a schematic view of the microstructure of the nano electromagnetic shielding antireflection film layer of the present invention.
FIG. 5 shows a nano SiO 2 film according to the present invention2The structure of the coated metal oxide composite material is shown schematically.
FIG. 6 is a schematic view showing a structure of an antireflection film layer in the prior art.
The reference numerals in the figures denote:
1. a nano electromagnetic shielding antireflection film layer; 11. nano SiO2A shell layer; 2. a front packaging material layer; 3. an encapsulation adhesive film layer is arranged; 4. a crystalline silicon cell layer; 5. a lower packaging adhesive film layer; 6. a rear packaging material layer; 7. pure SiO2And (4) a spherical shell.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples of the specification.
As shown in fig. 3 to 5, the crystalline silicon photovoltaic module suitable for use in a complex varying electromagnetic environment of the present embodiment includes, from top to bottom, an anti-reflection film layer 1, a front encapsulant layer 2, an upper encapsulant film layer 3, a crystalline silicon battery layer 4, a lower encapsulant film layer 5, and a rear encapsulant layer 6, where the anti-reflection film layer 1 is a nano composite material with an electromagnetic shielding function, and the nano composite material is a SiO nanocomposite material with an electromagnetic shielding function2And coating the transparent conductive metal oxide. SiO 22The coated transparent conductive metal oxide comprises SiO2A shell layer 11 and a transparent conductive metal oxide core 12.
The material of the transparent conductive metal oxide core 12 is selected to satisfy: (1) after the size of the material is adjusted to be nano-scale, the material has conductivity; (2) after the size of the material is adjusted to be nano-scale, the light transparency is high. The ITO/TCO material is consistent, such as: in2O3：Sn，SnO2，ZnO2，CdO2，CdIn2O4，Cd2SnO4，Zn2SnO4，In2O3-ZnO。
Thus constituted nano SiO2The coated metal oxide composite material has conductivity and light transmittance, and in this case, charged particles in the conductor can penetrate through SiO due to quantum tunneling effect2Nano-scale shell material to form surface covered SiO2When the material is used to form antireflection film, transparent film with excellent electric conductivity and high stability can be formed, and nano SiO film can be reused2Coating metal oxide on the surface of the front packaging material of the crystalline silicon photovoltaic module to form an anti-reflection film layer 1 with an electromagnetic shielding function instead of pure SiO2The light antireflection film layer formed by the material greatly improves the output power of the photovoltaic module.
In the specific application example, the nano SiO2The shell layer 11 may be a spherical shell or not, and only needs a material with a section to form a similar section. As shown in FIG. 4, in this embodiment, the nano SiO2The shell layer 11 is a spherical shell structure. Nano SiO2The diameter D of the shell 11 is smaller than the nano-electricityThickness of the magnetic shielding antireflection film layer 1, and D satisfies: d is more than or equal to 40nm and less than or equal to 60 nm. In FIG. 5, the antireflection film of the prior art uses pure SiO2The spherical shell structure.
Nano SiO2The thickness of the shell layer 11 is B, and in order to allow electrons to penetrate through, the following requirements are met: b is more than or equal to 1nm and less than or equal to 3 nm. In this embodiment, the value of B is preferably 1 nm. SiO 22The shell 11 is mainly used for protecting the transparent conductive metal oxide, and the thickness B of the shell 11 depends on the longest distance of the electron nano-tunneling effect (the size of the tunneling-like phenomenon is related to the wavelength of the traveling wave). For electrons, the thickness of the insulating shell is usually only a few nanometers, so the thinner the shell thickness, the easier it is to form a conductive battery shielding material, and the thinner the shell thickness B, the more suitable, in terms of process feasibility, is that electrons (electrons are freely movable electrons in conductive metal oxides) can penetrate through SiO2The shell layer 11 can be transferred between different transparent conductive metal oxide cores 12 after forming a coating layer, so that the coating layer has conductive capability, and becomes a coating layer (anti-reflection film layer 1) capable of shielding electromagnetic waves.
In a specific application example, the thickness of antireflection film layer 1 is 80nm to 200 nm. In this embodiment, the antireflection film layer 1 is preferably 100 nm.
The method for manufacturing the crystalline silicon photovoltaic module with the anti-electromagnetic capacity comprises the following steps:
a: before the production of the photovoltaic module, SiO is used2And coating the transparent conductive metal oxide composite material to form an anti-reflection film layer 1 on the front packaging material, and then producing the crystalline silicon photovoltaic module by using the front packaging material.
B: for the photovoltaic project which is constructed, because the photovoltaic module is manufactured, the photovoltaic module can be sprayed on the surface of the photovoltaic module which needs to be modified by adopting a spraying process, and after the dispersion medium is evaporated, an anti-reflection film layer 1 can be formed on the surface of the photovoltaic module which needs to be modified so as to achieve the modification purpose.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments to equivalent variations, without departing from the scope of the invention, using the teachings disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention should fall within the protection scope of the technical scheme of the present invention, unless the technical spirit of the present invention departs from the content of the technical scheme of the present invention.
Claims (6)
1. The utility model provides a crystalline silica photovoltaic module suitable for under complicated change electromagnetic environment, includes from last anti-reflection rete (1), preceding encapsulating material layer (2) that set gradually down, goes up encapsulation glued membrane layer (3), crystalline silica battery layer (4), down encapsulates glued membrane layer (5) and back encapsulating material layer (6), its characterized in that: the anti-reflection film layer (1) is composed of a nano composite material which is SiO2And coating the transparent conductive metal oxide.
2. The crystalline silicon photovoltaic module suitable for use in a complex varying electromagnetic environment of claim 1, wherein: the SiO2Transparent conductive metal oxide coated SiO2The shell layer (11) is of a spherical shell structure.
3. The crystalline silicon photovoltaic module suitable for use in a complex varying electromagnetic environment of claim 2, wherein: the SiO2The diameter of the shell layer (11) is smaller than the thickness of the antireflection film layer (1).
4. The crystalline silicon photovoltaic module suitable for use in a complex varying electromagnetic environment of claim 3, wherein: the SiO2The diameter of the shell layer (11) is D, and the following requirements are met: d is more than or equal to 40nm and less than or equal to 60 nm.
5. The crystalline silicon photovoltaic module suitable for use in a complex varying electromagnetic environment as claimed in any one of claims 1 to 4, wherein: the SiO2The thickness of the shell layer (11) is B, and the following requirements are met: b is more than or equal to 1nm and less than or equal to 3 nm.
6. The crystalline silicon photovoltaic module suitable for use in a complex varying electromagnetic environment as claimed in any one of claims 1 to 4, wherein: the thickness of the anti-reflection film layer (1) is 80-200 nm.
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