CN105238101B - Semiconductor nano paint composite and its method for solar cell to be made - Google Patents
Semiconductor nano paint composite and its method for solar cell to be made Download PDFInfo
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- CN105238101B CN105238101B CN201410293549.4A CN201410293549A CN105238101B CN 105238101 B CN105238101 B CN 105238101B CN 201410293549 A CN201410293549 A CN 201410293549A CN 105238101 B CN105238101 B CN 105238101B
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- nanosizing
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- electromagnetic shielding
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
A kind of method for being applied to be coated with liquid or gaseous state sprays goes to manufacture solar cell（Solar cell）, and solar cell can be made to have preferable generating effect and the semiconductor nano paint composite rich in electromagnetic shielding effect, and the method that solar cell is made using the semiconductor nano paint composite concurrently.Wherein, the semiconductor nano paint composite of the tool electromagnetic shielding effect, particle size comprising 0.01%~49% nanosizing N/P type impurity additive agent powder, 50%~99% nanosizing semiconductor substrate, 0.01%~30% conducting resin material and 0.01%~10% CNT, and the nanosizing semiconductor substrate and nanosizing N/P type impurity additive agent powders is 10‑9~10‑7Rice.Whereby, using the tool electromagnetic shielding effect semiconductor nano paint spray or be coated on wire mark and have on a substrate of metal wire, so that solar cell is made after toasted sizing.
Description
Technical field
The present invention is on a kind of semi-conductive coating constituent；It is applied to spray with liquid coating or gaseous state especially in regard to one kind
The method spilt goes to manufacture solar cell, and solar cell is had preferable generating effect and rich in electromagnetic shielding effect
Semiconductor nano paint composite, and solar cell is made using the semiconductor nano paint composite（Solar cell）
Method.
Background technology
In recent years, with industrial development and consumption electronic products universalness, the non-free radiation being full of in living environment
Electromagnetic wave also increases therewith；In addition, the Sustainable Development in order to take the green energy of environmental protection into account, the solar cell based on natural energy source is solemn
So turn into important and widely available technology.
The wide variety of general solar cell, wherein again most commonly seen with silica-based solar cell.The silica-based solar
Battery has P/N diodes layer（P/N diode）, anti-reflecting layer（antireflection）, front electrode（front
contact electrode）And backplate（back contact electrode）Etc. basic structure；And when sunshine is excited
The electronics of silicon atom（Electron）, electric hole（Hole）Pair and cause its dissociate, dissociate after electrons by P/N diodes
The accelerated separation of electric field influence is built, or even is influenceed by the built in field between P/N diodes, and electronics and electric hole is inhaled respectively
Its upper and lower two end plain conductor is led to, to form generating and galvanic circle.
However, because the solar cell of traditional silicon substrate is in the process of manufacturing either P/N diodes layer or anti-reflective
Penetrate layer（antireflection）, front electrode（front contact electrode）And backplate（back contact
electrode）, the basic structure such as vague and general layer material be typically to be made up of solid-state material, such production method is limited significantly
The use kenel of overall solar cell, or even it is not easy to the following surface for being machined in flexible base plate or flexible base plate；In addition,
When manufacturing solar cell with conventional solid-state material substrate surface, the nano-grade size of manufacture is coarse, and be limited to can not be effective
Miniaturization and control, and cause to only have in white light the spectrum of some high-energy sections that electronics electricity hole could be allowed to be excited by free, because
For this reason, it can not be shown always using the generating efficiency of the silica-based solar cell of produced in conventional processes and be substantially improved.
On the other hand, even if the solar cell of traditional silicon substrate can be by semiconductor, metal, ceramics, organic material
Deng constitute, but for a large amount of electromagnetic waves being rich in living environment be also only capable of play part bridging effect, more often result in
Reflection of electromagnetic wave, diffraction, move under water and continue to scatter in living environment, it is impossible to produced by effectively eliminating electromagenetic wave radiation at all
Pollution.
In view of this, it is necessary that development is a kind of really and is different from known semiconductor nano paint composite, with thus half
Conductor nano paint constituent, is made the preferable electricity generation efficiency of tool, and imitate with electromagnetic shielding effect and solar power generation pond
The coating of fruit, further solves foregoing various problems.
The content of the invention
Main purpose of the present invention is to improve above mentioned problem, to provide a kind of semiconductor nano with electromagnetic shielding effect
Paint composite, it can have preferable generating effect and electromagnetic shielding effect concurrently, and then can be used in the base of various kenels
Plate surface, make solar power generation structure have it is more represent place, being manufactured into for solar power generation structure can also be substantially reduced
This person.
An of the invention purpose is to provide a kind of to be made with having the semiconductor nano paint composite of electromagnetic shielding effect
The method of solar cell, it is readily able to the size and the uniformity that control semiconductor nano paint composite, with by means of receiving
Meter-sized generating monomer increases generating efficiency and rich in electromagnetic shielding actor.
Another object of the present invention is to provide a kind of to be made with having the semiconductor nano paint composite of electromagnetic shielding effect
The method of solar cell, it can be carried out at room temperature, and production cost can be greatly reduced, and with large area and easy means
Implement, and then simplify processing procedure and meet economic benefit person.
To reach aforementioned invention purpose, the present invention has the semiconductor nano paint composite of electromagnetic shielding effect, comprising
0.01%~49% nanosizing N/P type impurity additive agent powder, 50%~99% nanosizing semiconductor substrate, 0.01%~30%
Conducting resin material and 0.01%~10% CNT, and the nanosizing semiconductor substrate and nanosizing N/P type impurity additives
The particle size of powder is 10-9~10-7Rice.
Wherein, the CNT is SWNT, a diameter of 0.6~4 nanometer of the SWNT.
Wherein, the CNT is multiple-wall carbon nanotube, a diameter of 10~240 nanometers of the multiple-wall carbon nanotube.
Wherein, nanosizing N/P type impurity additive agent powder is that nanosizing N-type impurity additive agent powder, nanosizing p-type are miscellaneous
Matter additive agent powder or the nanosizing p type impurity additive agent powder of equivalent are mixed with nanosizing N-type impurity additive agent powder blending
Close additive.
Wherein, the nanosizing N-type impurity additive agent powder is selected from hydrogen phosphide, phosphorus pentoxide, arsenic hydride, diarsenic pentoxide
Or the mixing of hydrogen phosphide and phosphorus pentoxide.
Wherein, the nanosizing p type impurity additive agent powder is diborane or B2O5。
Wherein, separately addition 0.01%~49% chemical solvent, the chemical solvent be methanol, ethanol, benzene, paraxylene, benzene
Methanol or toluene.
Wherein, separately addition 0.01%~49% passivation gas, the passivation gas be nitrogen, helium, neon, Krypton or argon
Gas.
Wherein, separately added with 0.01%~49% dyestuff, the dyestuff is TCPP dyestuffs.
Wherein, separately added with 0.01%~49% antireflection material, the antireflection material is silicon-dioxide powdery or silicon nitride powder
Body, and particle diameter is 10-9~10-7Rice.
Wherein, separately added with 0.01%~3% transparent paint vehicle.
Wherein, the nanosizing semiconductor substrate is silicon, GaAs, germanium, ZnS or MgF2。
Wherein, the conducting resin material is aluminium glue or elargol.
To reach aforementioned invention purpose, the present invention uses the semiconductor nano paint composite system for having electromagnetic shielding effect
Into the method for solar cell, comprising：In forming a prime coat on a substrate, and screen printed gold belongs to line in the primer layer；Spray
The semiconductor nano paint composite containing nanosizing p type impurity additive agent powder is spilt or is coated with the prime coat and wire mark metal
The surface of line, to form a P-type layer；Spray or be coated with the P-type layer and contain nanosizing equivalent P and N-type impurity additive
One vague and general layer of powder；On the vague and general layer after N-type impurity additive agent powder of the formation containing nanosizing a N-type layer；And
After toasted sizing, belong to line then at the N-type layer surface screen printed gold, and it is transparent in the surface formation one of the N-type layer wire mark metal wire
Layer.
Wherein, shaping the semiconductor nano paint composite blending simultaneously of the vague and general layer has the nanosizing p-type of equivalent miscellaneous
Matter additive agent powder and nanosizing N-type impurity additive agent powder.
Wherein, in the non-wire mark metal wire of the N-type layer and before not forming hyaline layer, prior to another sprinkling in the N-type layer or apply
Cloth is added with the semiconductor nano paint composite of dyestuff, then the semiconductor nano of sprinkling or coating added with antireflection material that continues
Paint composite, with forming the anti-reflecting layer that dyestuff is stacked with antireflection material in the N-type layer, then at anti-reflecting layer online
Metal wire is printed, and the hyaline layer is formed in the surface of the anti-reflecting layer wire mark metal wire.
Brief description of the drawings
Fig. 1 a~1b：Shape the Making programme figure of the preferred embodiment of solar cell.
Fig. 2 a~2b：Shape another preferred embodiment Making programme figure of solar cell.
The prime coat of 1 base material 2
The vague and general layer of 3 P-type layer 4
The hyaline layer of 5 N-type layer 6
7 anti-reflecting layer 7a dye coatings
7b antireflections top layer
L1, L2 metal wire.
Embodiment
For above and other objects, features and advantages of the invention can be become apparent, it is cited below particularly it is of the invention compared with
Good embodiment, and coordinate accompanying drawing, it is described in detail below：
The semiconductor nano paint composite of present invention tool electromagnetic shielding effect goes in any geometry
Solar cell is formed with any material carrier surface, and the solar cell can play preferable photoelectric conversion effect and also can
The free electromagnetic wave in living environment is covered simultaneously.Wherein, so-called " coating " can be coating solution or spray, as non-solid
The general term of kenel.
The semiconductor nano paint composite of the tool electromagnetic shielding effect, includes 0.01%~49% nanosizing N/P types
Impurity additive agent powder（Dopant）, 50%~99% nanosizing semiconductor substrate, 0.01%~30% conducting resin material and 0.01%
~10% CNT（CNT, carbon nanotube）, and the nanosizing semiconductor substrate and nanosizing N/P type impurity
The particle size of additive agent powder is 10-9~10-7Rice.
Wherein, nanosizing N/P type impurity additive agent powder can be nanosizing N-type impurity additive agent powder, nanosizing P
Type impurity additive agent powder, or the nanosizing p type impurity additive agent powder of equivalent are mixed with nanosizing N-type impurity additive agent powder
The additive package mixed；Preferably, the nanosizing N-type impurity additive agent powder can be selected from hydrogen phosphide, phosphorus pentoxide, arsenic
The mixing of hydrogen, diarsenic pentoxide or hydrogen phosphide and phosphorus pentoxide, the nanosizing p type impurity additive can be selected as diborane
Or B2O5.Whereby, particle diameter convergence 10 is passed through-9~10-7Rice nano-scale the nanosizing N-type impurity additive agent powder and/or
The nanosizing p type impurity additive agent powder, can increase the mixture homogeneity of powder granule and the nanosizing semiconductor substrate then,
And then preferable generating effect is presented.
On the other hand, the CNT of the present embodiment can be selected as SWNT, and the SWNT
A diameter of 0.6~4 nanometer；Or, the CNT can also be selected as multiple-wall carbon nanotube, and the multiple-wall carbon nanotube
A diameter of 10~240 nanometers.In detail, because CNT has the highly conductive characteristic of metallic conductor or semiconductor, and also have
There is splendid engineering properties and gas storage characteristic, conductive effect can not only be increased by the mutually auxiliary effect of the CNT by causing
Really, while being also dependent on the fine cast arrangement architecture of the CNT, and the electromagnetism scattered in living environment can effectively be covered
Ripple, effectively to eliminate the electromagenetic wave radiation produced pollution.
For example, the Electronic Transport of Two Benzene of SWNT can compare metallic copper, and its resistivity is about 5.1 × 10-6
Ω-cm, convergence 10 is carried with this9 A/cm2Maximum current density；Therefore, even if being blinded by life cycle through the CNT
The electromagnetic wave scattered in border, but remains to maintain splendid Electronic Transport of Two Benzene, and the solar cell being made is presented preferable
Conductive characteristic.
Based on prostatitis constituent, the present invention also may be selected the chemical solvent of addition 0.01%~49%, and the chemical solvent can be with
For methanol, ethanol, benzene, paraxylene, phenmethylol, toluene etc., using with regard to this is as liquid coating and promotes the tool electromagnetic shielding
The blending uniformity of the semiconductor nano paint composite of effect；Or, on the premise of added with afore mentioned chemical solvent, separately again
The passivation gas of addition 0.01%~49%, the passivation gas is nitrogen, helium, neon, Krypton, argon gas etc., to be used as gas with regard to this
State spray simultaneously lifts convenience when subsequently making solar cell.
In the present embodiment, the nanosizing semiconductor substrate can be selected as silicon, GaAs, germanium, ZnS or MgF2Deng tool half
The nanosizing granular powder of conductor characteristics；The conducting resin material can then select the conductive polymer for having electric conductivity for aluminium glue or elargol etc.
Son.And based on principle of identity, those skilled in the art can also select to replace it by the identical characteristic person of other tools, hold not herein by
One repeats.
In addition to the foregoing, the semiconductor nano paint composite of present invention tool electromagnetic shielding effect can also be separately added with
0.01%~49% dyestuff, to increase the optical absorption characteristics of incident light through dyestuff；Wherein, the dyestuff can select to contaminate for TCPP
Liao ﹝ tetra（4-carboxyphenyl）Porphyrin ﹞.Also, the semiconductor nano of present invention tool electromagnetic shielding effect is applied
Expect constituent can also separately be added with 0.01%~49% antireflection material, with through antireflection material reduce light reflection, and with this
The common forming antireflective film of dyestuff is used；Wherein, the antireflection material can be selected as silicon-dioxide powdery or beta-silicon nitride powder,
And particle diameter is preferably 10-9~10-7Rice.
What is more, it is also an option that addition 0.01%~3% transparent paint vehicle, with lifted light penetrate and be dyestuff or other composition
The effect that part absorbs；The transparent paint vehicle can be the chemical synthesis paint or lacquer of any tool light peneration matter, and this is this area
Technical staff can know, repeat no more.
From the above, the semiconductor nano paint composite of present invention tool electromagnetic shielding effect, which is satisfied, can constitute coating, spray
The product of any kenel such as agent, for the manufacturing process of solar cell.In detail, the present embodiment selection is with 5% nanometer five
Aoxidize two phosphorus and 45% nano-silicon, 29.5% elargol and the common blending of 0.5% SWNT, and in 20% methanol
Be formed as the liquid coating of N-type semiconductor under effect；Or, also it may be selected high in being filled in one after the common blending of each material in prostatitis
Press metal can and in the nitrogen of filling 20% in the high-pressure metal tank, and then be formed as the gaseous state spray of N-type semiconductor.Based on this,
The present embodiment separately may be selected to aoxidize two boron and 45% nano-silicon, 29.5% elargol and 0.5% single wall nano with 5% nanometer five
The common blending of carbon pipe, and be formed as in the presence of 20% methanol the liquid coating of P-type semiconductor or in the high-pressure metal tank
Be formed as the gaseous state spray of P-type semiconductor after the nitrogen for being filled with 20%.Wherein, high-pressure metal tank is filled in each material jointly
Interior technological means is that can be understood by those skilled in the art, is only capable of constituting high pressure spray, holds system not subject to the limits and goes to live in the household of one's in-laws on getting married
State its manufacturing process.
Thus, using semiconductor nano paint composite of the present invention when solar cell makes, can be if Fig. 1 a are in a base
A prime coat 2 is formed on plate 1, and screen printed gold belongs to line L1 on the prime coat 2；Selection sprinkling or coating are miscellaneous containing nanosizing p-type
The semiconductor nano paint composite of matter additive agent powder is in the surface of the prime coat 2 and wire mark metal wire L1, to form a p-type
Layer 3；Being sprayed in the P-type layer 3 or being coated with blending simultaneously has the nanosizing p type impurity additive agent powder and nanosizing N of equivalent
The semiconductor nano paint composite of type impurity additive agent powder, to form a vague and general layer 4；In sprinkling on the vague and general layer 4 or painting
Cloth contains the semiconductor nano paint composite of nanosizing N-type impurity additive agent powder, to form a N-type layer 5；And it is toasted fixed
After type, belong to line L2 then at the surface screen printed gold of N-type layer 5, and a hyaline layer is formed in the N-type layer 5 wire mark metal wire L2 surface
6, to complete the making of solar cell as shown in Figure 1 b.Wherein, temperature needed for baking sizing is preferably 50 DEG C~200 DEG C；And
The aspect of wire mark metal wire is depending on actual demand, not limit it.
, not only can be by the nanosizing in semiconductor nano coating composition according to above-mentioned made solar cell
Grain lifting electric conductivity, and also there is electromagnetic shielding effect simultaneously；Even, it can more be filled through the prime coat 2 formed in processing procedure
Divide reflection incident light in each semiconductor active layer（P-type layer 3, N-type layer 5 ... etc.）, so that ambient enters via the hyaline layer 6
Enter, and in the presence of auxiliary has the prime coat 2, preferably photic electric effect can be presented then.In addition, made by the present invention too
Positive energy battery can more pass through the hyaline layer 6, reach effect of protection unitary construction.Also, through the effect of the vague and general layer 4,
Then the monolithic conductive of solar cell can be effectively lifted, and is also dependent on the effect of contained CNT in each layer, with same
When reach in masking living environment and scatter the effect of electromagnetic wave.
Even, the present invention can also as shown in Figure 2 a, the non-wire mark of N-type layer 5 formed in the N-type semiconductor nano paint
Metal wire L2, and do not formed before the hyaline layer 6, received prior to the semiconductor of another sprinkling or coating added with dyestuff in the N-type layer 5
Rice paint composite, then the semiconductor nano paint composite of sprinkling or coating added with antireflection material that continues, with the N-type layer
The anti-reflecting layer 7 that dyestuff is stacked with antireflection material is formed on 5（As illustrated, the anti-reflecting layer 7 has dye coating 7a and anti-reflective
Firing table layer 7b）, and as shown in Figure 2 b the anti-reflecting layer 7 shape and it is toasted after, screen printed gold belongs to line on the anti-reflecting layer 7
L2, and form the hyaline layer 6 in the anti-reflecting layer 7 wire mark metal wire L2 surface；Whereby, reduced through the anti-reflecting layer 7
The reflectivity of light, and the effect of increase solar cell to the light absorbs efficiency of incident light is reached simultaneously.
In summary, due to semiconductor nano paint composite of the present invention with nanosizing N/P type impurity additive agent powder, receive
Riceization semiconductor substrate and the common blending of CNT are formed, therefore molecular particle size contained by the semiconductor nano paint composite is relative
Level off to 10-9~10-7Rice grade, and electromagnetic shielding effect is presented also through the CNT self-characteristic, more can be just non-
The blending of solid matter and form coating or spray.Therefore the semiconductor nano coating group of present invention tool electromagnetic shielding effect
Into thing can not only with the kenel of coating or spray be applied to various substrates, also especially can in response to flexible base plate or flexible base plate,
And the N/P type semiconductor films closely attached are shaped in substrate surface easily, whereby constitute semiconductor nano coating of the present invention
Thing has preferably and being widely applied property, and causes the made solar cell to have electric conductivity and electromagnetic shielding concurrently
Deng preferable effect；Even, the semiconductor nano paint composite can cause to own in white light after by nanometer miniaturization, more
The light of whole district's spectrum can all allow the electronics electricity hole of N/P type semiconductor films to be dissociated and excite, and solve traditional material particle heap simultaneously
Produced gap when repeatedly, the semiconductor nano paint composite sprinkling/painting is lifted can be stacked through more close molecule
The film forming uniformity of substrate surface is distributed in, and solar cell is further dependent on uniform N/P types semiconductor film film layer
Effect of the overall solar cell power generation efficiency of lifting is reached, and external electromagnetic ripple is covered simultaneously by means of CNT.
The semiconductor nano paint composite of present invention tool electromagnetic shielding effect, it can have preferable electric conductivity and electricity concurrently
Magnetic wave screening effect, and then the substrate of various kenels is used in, so that preferable particle, which is presented, stacks the uniformity simultaneously, this is lifted it
Application.
The present invention to have the method that solar cell is made in the semiconductor nano paint composite of electromagnetic shielding effect, its
It is readily able to control the size and the uniformity of semiconductor nano paint composite, with by means of the increase of the generating monomer of nano-scale
Generating efficiency simultaneously makes the solar cell be acted on rich in electromagnetic shielding.And make more be greatly reduced at room temperature and be produced into
This, to meet economic benefit.
Claims (14)
1. a kind of semiconductor nano paint composite for having electromagnetic shielding effect, it is characterised in that include 0.01%~49%
Nanosizing N/P type impurity additive agent powder, 50%~99% nanosizing semiconductor substrate, 0.01%~30% conducting resin material and
0.01%~10% CNT, and the particle diameter of the nanosizing semiconductor substrate and nanosizing N/P type impurity additive agent powders
Size is 10-9~10-7Rice；
Wherein, nanosizing N/P type impurity additive agent powder is that nanosizing N-type impurity additive agent powder, nanosizing p type impurity add
Plus agent powder or the nanosizing p type impurity additive agent powder of equivalent and the mixing of nanosizing N-type impurity additive agent powder blending add
Plus agent；
Wherein, in the semiconductor nano paint composite another addition 0.01%~49% chemical solvent.
2. the semiconductor nano paint composite of tool electromagnetic shielding effect according to claim 1, it is characterised in that the nanometer
Carbon pipe is SWNT, a diameter of 0.6~4 nanometer of the SWNT.
3. the semiconductor nano paint composite of tool electromagnetic shielding effect according to claim 1, it is characterised in that the nanometer
Carbon pipe is multiple-wall carbon nanotube, a diameter of 10~240 nanometers of the multiple-wall carbon nanotube.
4. the semiconductor nano paint composite of tool electromagnetic shielding effect according to claim 1, it is characterised in that the nanometer
Change N-type impurity additive agent powder and be selected from hydrogen phosphide, phosphorus pentoxide, arsenic hydride, diarsenic pentoxide or hydrogen phosphide and five oxidations two
The mixing of phosphorus.
5. the semiconductor nano paint composite of tool electromagnetic shielding effect according to claim 1, it is characterised in that the nanometer
It is diborane or B to change p type impurity additive agent powder2O5。
6. according to the semiconductor nano paint composite of the tool electromagnetic shielding effect of claim 1,2 or 3, it is characterised in that
The chemical solvent is methanol, ethanol, benzene, paraxylene, phenmethylol or toluene.
7. according to the semiconductor nano paint composite of the tool electromagnetic shielding effect of claim 1,2 or 3, it is characterised in that
The passivation gas of another addition 0.01%~49%, the passivation gas is nitrogen, helium, neon, Krypton or argon gas.
8. according to the semiconductor nano paint composite of the tool electromagnetic shielding effect of claim 1,2 or 3, it is characterised in that
0.01%~49% dyestuff is separately added with, the dyestuff is TCPP dyestuffs.
9. according to the semiconductor nano paint composite of the tool electromagnetic shielding effect of claim 1,2 or 3, it is characterised in that
0.01%~49% antireflection material is separately added with, the antireflection material is silicon-dioxide powdery or beta-silicon nitride powder, and particle diameter is 10-9
~10-7Rice.
10. according to the semiconductor nano paint composite of the tool electromagnetic shielding effect of claim 1,2 or 3, it is characterised in that
Separately it is added with 0.01%~3% transparent paint vehicle.
11. according to the semiconductor nano paint composite of the tool electromagnetic shielding effect of claim 1,2 or 3, it is characterised in that
The nanosizing semiconductor substrate is silicon, GaAs, germanium, ZnS or MgF2。
12. according to the semiconductor nano paint composite of the tool electromagnetic shielding effect of claim 1,2 or 3, it is characterised in that
The conducting resin material is aluminium glue or elargol.
13. a kind of semiconductor nano paint composite using tool electromagnetic shielding effect according to claim 1 is made
The method of solar cell, comprising：
In one prime coat of formation on a substrate, and screen printed gold belongs to line in the primer layer；
The semiconductor nano paint composite of sprinkling or coating containing nanosizing p type impurity additive agent powder is in the prime coat wire mark
The surface of metal wire, to form a P-type layer；
There are the nanosizing p type impurity additive agent powder and nanosizing N-type of equivalent miscellaneous in sprinkling in the P-type layer or coating blending simultaneously
The semiconductor nano paint composite of matter additive agent powder, to form a vague and general layer；
The semiconductor nano paint composite containing nanosizing N-type impurity additive agent powder in sprinkling on the vague and general layer or coating,
To form a N-type layer；And
After toasted sizing, belong to line then at the N-type layer surface screen printed gold, and one is formed in the surface of the N-type layer wire mark metal wire
Individual hyaline layer.
14. the method according to claim 13 that solar cell is made, it is characterised in that in the non-wire mark metal wire of the N-type layer
And do not formed before the hyaline layer, constituted prior to the semiconductor nano coating of another sprinkling or coating added with dyestuff in the N-type layer
Thing, then the semiconductor nano paint composite of sprinkling or coating added with antireflection material that continues, with forming dyestuff in the N-type layer
The anti-reflecting layer stacked with antireflection material, screen printed gold belongs to line on the anti-reflecting layer, and in the anti-reflecting layer screen printed gold
The surface of category line forms the hyaline layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410293549.4A CN105238101B (en) | 2014-06-26 | 2014-06-26 | Semiconductor nano paint composite and its method for solar cell to be made |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410293549.4A CN105238101B (en) | 2014-06-26 | 2014-06-26 | Semiconductor nano paint composite and its method for solar cell to be made |
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| CN105238101B true CN105238101B (en) | 2017-07-18 |
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| CN1099445C (en) * | 1997-05-26 | 2003-01-22 | 四川联合大学 | Electromagnetic wave shielding composite coating and method for preparing same |
| KR100426495B1 (en) * | 2001-12-28 | 2004-04-14 | 한국전자통신연구원 | Semiconductor device using a single carbon nanotube and a method for manufacturing of the same |
| CN1233758C (en) * | 2002-10-17 | 2005-12-28 | 沈阳金纳新材料有限公司 | Conductive electromagnetic shielding paint and application thereof |
| US20130048078A1 (en) * | 2010-05-20 | 2013-02-28 | Korea Institute Of Machinery And Materials | Carbon nanotube-invaded metal oxide composite film, manufacturing method thereof, and organic solar cell with improved photoelectric conversion efficiency and improved duration using same |
| CN102097518B (en) * | 2010-12-15 | 2012-12-19 | 清华大学 | Solar cell and preparation method thereof |
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